CN110048698A - Inhibit the driving circuit of SiC MOSFET grid crosstalk - Google Patents
Inhibit the driving circuit of SiC MOSFET grid crosstalk Download PDFInfo
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- CN110048698A CN110048698A CN201910308322.5A CN201910308322A CN110048698A CN 110048698 A CN110048698 A CN 110048698A CN 201910308322 A CN201910308322 A CN 201910308322A CN 110048698 A CN110048698 A CN 110048698A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Abstract
A kind of SiC MOSFET grid clutter reduction driving circuit, the output end of the driving signal amplifying circuit of front end and prime after first resistor is in parallel with first capacitor is connect, the anode of the rear end and first diode of first resistor and first capacitor, the anode of second capacitor is connected with the front end of the 4th resistance, the cathode of first diode passes through the ground terminal of second resistance and prime, the base stage of pnp transistor, the anode of second diode is connected with the front end of 3rd resistor, the cathode of second capacitor and the collector of pnp transistor connect, the cathode of the emitter of pnp transistor and the second diode, the rear end of 3rd resistor and the ground terminal connection of circuit rear class；The rear end of 4th resistance is connect with the grid of SiC MOSFET, is connected with third capacitor between the grid and rear pole ground terminal of the SiC MOSFET.The invention has the advantages that effectively inhibiting crosstalk, gate drive circuit is enabled to stablize normal work.
Description
Technical field
The present invention relates to a kind of grid clutter reduction circuits of SiC MOSFET power device, are mainly used for bridge-type drive
In dynamic circuit, belong to power electronics actuation techniques field.
Background technique
Compared with Si MOSFET, Si IGBT, SiC MOSFET on state resistance is minimum, the on/off time is most short, furthermore
The input capacitance of SiC MOSFET is small, therefore switching frequency is higher.Application of the SiC MOSFET in terms of power electronic is very wide
General, its appearance is of great significance to the development of power electronic.In the past ten years, SiC MOSFET is in efficient, Gao Kai
It closes and has gradually replaced traditional Si MOSFET in frequency and high temperature application and become transistor most potential in power electronic.
With the raising of switching speed, under big voltage conditions when switching tube switches switch state, complementary switch pipe
Drain terminal can bear very big dv/dt, so that the gate-source capacitance by gate leakage capacitance to metal-oxide-semiconductor charges, cause grid to bear very big
Di/dt, there is gate positive voltage spike, cause metal-oxide-semiconductor to be unable to completely close and increase switching loss, due to SiC MOSFET
Threshold voltage it is relatively low, result even in device when negative voltage spike is more than threshold voltage and open by mistake and open, influence power conversion
The normal work of circuit.So in SiC MOSFET bridge formula gate drive circuit, it should be specifically noted that crosstalk phenomenon bring influences,
It is necessary to analyze influence of each parasitic parameter to crosstalk phenomenon in crosstalk Producing reason and switching circuitry.This drives grid
The design optimization of circuit has certain directive significance.
Summary of the invention
In order to solve the above problems existing in the present technology, the present invention carries out existing SiC MOSFET gate drive circuit
Structure of modification proposes a kind of SiC MOSFET gate drive circuit, the advantage of shunt capacitance method and active quenching method is utilized, effectively
Crosstalk is inhibited, gate drive circuit is enabled to stablize normal work.
Technical scheme is as follows: a kind of SiC MOSFET grid clutter reduction driving circuit, which is characterized in that packet
Include the first-the four resistance, the first-third capacitor, first diode, the second diode and a pnp transistor, first resistor with
The output end connection of the driving signal amplifying circuit of front end and prime after first capacitor is in parallel, first resistor and first capacitor
The front end of the anode of rear end and first diode, the anode of the second capacitor and the 4th resistance connects, and the cathode of first diode is logical
The front end for crossing the ground terminal of second resistance and prime, the base stage of pnp transistor, the anode of the second diode and 3rd resistor connects
It connecing, the cathode of the second capacitor and the collector of pnp transistor connect, the cathode of the emitter of pnp transistor and the second diode,
The rear end of 3rd resistor and the ground terminal connection of circuit rear class；The rear end of 4th resistance is connect with the grid of SiC MOSFET,
Third capacitor is connected between the grid and rear pole ground terminal of the SiC MOSFET, the capacitance of third capacitor must be greater than SiC
Equivalent capacity between MOSFET grid source.
The invention has the advantages that crosstalk is effectively inhibited using the advantage of shunt capacitance method and active quenching method, so that grid
Driving circuit can stablize normal work.It is capable of the generation of effective suppressor grid crosstalk, is used in bridge circuit, in conjunction with electricity in parallel
Appearance method and active quenching method drive existing SiC MOSFET grid and carry out structure of modification, propose that novel SiC MOSFET grid drive
Dynamic circuit, shunt capacitance, resistance, triode and diode between grid, source can be better in MOS device switching time
Inhibit crosstalk, this structure can be applied in bridge circuit.
Detailed description of the invention
Fig. 1 is the overall structure diagram of application example of the present invention；
Fig. 2 be SiC MOSFET bridge formula circuit of the present invention in Fig. 1 switching waveform (" grid voltage Vg- time t " characteristic curve and
" drain current Id- time t " characteristic curve).
Specific embodiment
Referring to Fig. 1, a kind of driving circuit (in Fig. 1 in dotted line frame) for inhibiting SiC MOSFET grid crosstalk of the present invention,
It is characterized in that, including first-the four resistance R1, R2, R3, Rg, first-third capacitor C1, C2, C3, first diode D1, second
The driving signal of front end and prime after diode D2 and a pnp transistor T, first resistor R1 are in parallel with first capacitor C1 is put
The output end connection of big circuit, anode, the second capacitor of the rear end and first diode D1 of first resistor R1 and first capacitor C1
The anode of C2 is connected with the front end of the 4th resistance Rg, and the cathode of first diode D1 passes through the ground connection of second resistance R2 and prime
End, the base stage of pnp transistor T, the second diode D2 anode connected with the front end of 3rd resistor R3, the cathode of the second capacitor C2
It is connect with the collector of pnp transistor T, the cathode of the emitter of pnp transistor T and the second diode D2,3rd resistor R3
The connection of the ground terminal of rear end and circuit rear class；The rear end of 4th resistance Rg is connect with the grid of SiC MOSFET, in the SiC
Third capacitor C3 is connected between the grid of MOSFET and rear pole ground terminal, the capacitance of third capacitor C3 must be greater than SiC
Equivalent capacity Cgs between MOSFET grid source.
R1 and R2 constitutes a bleeder circuit, and the voltage on R1 charges to C1, can determine C1 according to the ratio of R1 and R2
On voltage value, the voltage on C1 will provide negative pressure during SiC MOSFET is turned off, mention without additional voltage source
For negative shutdown voltage.The value of C1 needs sufficiently large to keep negative shutdown voltage constant.Resistance R3 is beaten when negative voltage spike occurs
The unlatching when due to voltage spikes occurs of pnp transistor and the concatenated pnp transistor of capacitor C2 is opened, a low impedance path is provided, electricity
Hold the energy that C2 will absorb the due to voltage spikes that crosstalk generates.When SiC MOSFET is closed, electric current discharges by diode D, accelerates
The closing velocity of SiC MOSFET.To reach better clutter reduction effect, the electricity of one 2 μ F of parallel connection between SiC MOSFET
Hold C3.C3 is the capacitor with Cgs parallel connection, and Cgs is equivalent capacity of the MOSFET internal parallel between grid source.
Circuit shown in FIG. 1 is in use, using following technical measures:
1, driving voltage selects:
Driving voltage size needs are selected according to the parameter list of SiC MOSFET, and the C2M0040120D of CREE company can be born
Gate source voltage range be -10/+25V, representative value is 2.0V, minimum value 1.8V when junction temperature is 150OC.SiC MOSFET grid
Device is fully on when source voltage Vgs is 10V, but on state resistance is too big, has optimal on-state when Vgs is 20V
Characteristic, so selection driving cut-in voltage 20V.Since the threshold voltage of C2M0040120D is smaller, to close device completely
Disconnected, avoiding misleading generates power consumption, and selecting shutdown driving negative pressure is -4V.
2, isolation method selects:
The driving voltage 20V that gate drive circuit needs, to avoid the high voltage of driving circuit to the low-voltage of control signal side
It has an impact, needs to take quarantine measures to control signal side and driving circuit.Currently, the isolation side used in circuit design
Formula has light-coupled isolation, Magnetic isolation, Capacitor apart and CMOS isolation etc..The supply voltage of electromagnetic isolation and Capacitor apart too it is small not
It is suitble to gate drive circuit, the power supply voltage range of light-coupled isolation is isolated supply voltage in 3V-30V in 4.5V-30V, CMOS, is all fitted
The voltage requirement of gate drive circuit is closed, light-coupled isolation has stronger anti-electromagnetic interference capability, at low cost, and frequency requirement is not very
It can choose light-coupled isolation when high, CMOS isolation is used in the relatively high circuit of frequency requirement, at high cost.Grid driving of the invention
Circuit works in the frequency range of 100kHz to 500kHz, it is possible to select light-coupled isolation chip ACPL-P483.
3, buffer designs:
The output of SiC MOSFET driving circuit must provide suitable driving voltage and biggish instant drive current, isolated core
The output current capacity of piece is limited, so the rear stage that does of driving circuit needs that the buffer with power amplification is added to recommend
Output circuit (two triodes S1, S2 in Fig. 1), to improve driving capability.SiC MOSFET required driving when opening
Current average can be estimated by following formula:
Wherein, Ig indicates that average driving current in opening process, Qg are gate charges total charge dosage, td(on) it is when opening delay
Between, tf is drain-source voltage Vds fall time, these three data is obtained from device Datasheet are as follows: Qg=28nC, td(on)=
Average current Ig=0.57A in opening process is calculated in 14.8ns, tf=34.4ns.
Common power amplification circuit has pushing away based on bipolar junction transistor to exempt from power amplification circuit and based on small-power
The totem power amplification circuit of MOSFET, as shown in figure 1 shown in the push-pull power amplifier circuit of bipolar transistor S1, S2 composition.
The present invention has selected the push-pull power amplifier circuit based on bipolar junction transistor to carry out simulation analysis.
4, dead time:
Unlatching leads to direct-current short circuit to two SiC MOSFET simultaneously in bridge circuit in order to prevent, in two reversed phase gratings of switching tube
Certain dead time is inserted between the voltage of source, two SiC MOSFET are turned off in dead time, to avoid straight-through.In height
In the SiC MOSFET bridge formula circuit of switching frequency, the representative value of dead time is usually set lower than 1us, for such as Si
Low frequency switch as IGBT, dead time are more much smaller than switch periods.
As shown in Fig. 2, M1 forward direction gate source voltage just starts to close after removing by certain shutdown delay (t1-t2) device
It is disconnected, it is zero using certain fall time M1 leakage current.M2 is by open time delay (t4-t5) and after the rise time (t5-t6)
It fully opens.To prevent from leading directly to, therefore, to assure that M1 completely closes rear M2 and is then turned on, set dead time ratio t1-t3's
Time interval is big, that is, dead time is greater than the shutdown of M1.
However, when the grid that the control signal of gate drive circuit is transferred to SiC MOSFET is needed by certain delay
Between, when the delay that control signal is transmitted to two power tubes is equal, dead time can be arranged as discussion above, when
Control signal be transferred to upper and lower two power tubes delay it is unequal when, it is also possible to there is straight-through phenomenon.Therefore in design grid
It needs to make as far as possible the driving circuit delay of lower power tube equal when driving circuit, two driving circuits is usually designed to one
Sample obtains equal delay.
Overcurrent protection:
SiC MOSFET is usually operated under high voltage, current state, needs design protection circuit to ensure that circuit is not burnt
It is bad.Overcurrent protection is ensured that the leakage current of SiC MOSFET in reasonable working range, and leakage current can pass through resistance point
Stream or current converter directly detect, and the pressure drop Vds in MOSFET hourglass source electrode also can reflect the size of leakage current, it is possible to
The size that pressure obtains leakage current is leaked by detection.The diode that power SiC MOSFET source and drain end is connected in Fig. 1 is desaturation
One diode is connected to MOSFET drain electrode by detection, and voltage Vds rises when overcurrent, and diode bias state changes, to examine
Survey over-current state.
(1) pre-charging stage:
Before gate drive circuit work, need to charge by voltage source Vs to capacitor C1 and C2, C1 and C2 obtain enough energy
The voltage at their both ends can remain unchanged afterwards, to C1 charging be for SiCMOSFET turn off when negative pressure is provided, to C2 charging be for
C2 charging causes to turn off absolute value of voltage reduction when T being avoided to be connected.Two SiC MOSFET are in C1 and C2 pre-charge process
Conducting, but the input voltage of Buck is zero, so there is no the phenomenons of voltage short circuit.
Pre-charge process can be divided into two stages, and the first stage charges to the parasitic capacitance Cgs of SiC MOSFET, second stage
It charges to capacitor C2.First stage gate current charges to Cgs, generates pressure drop at the both ends R3 when gate current flows through R3, when this pressure
When drop is more than the threshold voltage of pnp transistor, at this moment transistor T conducting enters second stage, electric current flows through C2 and charges to C2,
Since the quantity of electric charge of C1 and C2 are gradually increased, charging current is gradually reduced after reaching peak value, after C1 and C2 obtains enough energy,
Charging current is that zero, R3 both end voltage is zero, and transistor T is closed, and precharge terminates.Switch S1_h and S1_l after precharge
It closes, S2_h and S2_l are opened, and two MOSFET are closed, and at this moment C1 provides negative shutdown voltage for SiC MOSFET.In Buck electricity
The input terminal on road adds voltage, and synchronous Buck power converter is started to work, and gate drive circuit is also ready.
(2) (following symbol " _ h " and " _ l " respectively indicate the same position of the middle and upper part Fig. 1 and lower part for opening process analysis
Element):
The SiC MOSFET on the top SiC MOSFET_H() open, the SiC MOSFET of the lower part SiC MOSFET_L() close, it drives
Streaming current charges to capacitor Cgs_h and flows through resistance R3_h, and a positive pressure is generated between the emitter and base stage of triode T_h and is led
Triode T_h conducting is caused, capacitor C2_h charges to capacitor Cgs_h, so this circuit will not slow down the unlatching of SiC MOSFET
Process, when the voltage of C2_h reduces, voltage Vs_h gives capacitor C2_h and Cgs_h to charge simultaneously, gradually with the Cgs_h quantity of electric charge
Increase, gate current reduces, and R3_h both end voltage, which is reduced to, closes triode T_h, and Vs_h gives capacitor Cgs_h fully charged rear electric current
It is that zero, SiC MOSFET_H is fully opened.Since a part of load current is charged by capacitor Cgd_l to capacitor Cgs_l, so
The shutdown negative pressure of SiC MOSFET_L is smaller than the voltage to charge on original C1_l, this can be by increasing resistance R1_l and capacitor
C1_l obtains preset negative shutdown voltage.
When SiC MOSFET_H is closed, since there are dead time, SiC MOSFET_L is still remained off,
The grid source shutdown negative voltage of SiC MOSFET_H is provided by capacitor C1_h, and negative shutdown voltage accelerates the discharge process of Cgs_h, this
When Cgs_h discharge current flow through diode rather than resistance R3_h, voltage is constant to be held off, and the capacitance of C1_h needs to compare
It is larger.At this moment diode drop is smaller, and the voltage of triode T_l base stage and transmitting interpolar is positive, so triode T_l is closed
It closes, C2_h is disconnected, and is not influenced on the switching speed of SiC MOSFET.
The analysis of clutter reduction:
When SiC MOSFET_H is closed, the drain-source voltage Vds_l of SiC MOSFET_L rapidly drops to 0 from Vdc, in SiC
Occur the leakage current that negative due to voltage spikes negative voltage spike generates between the gate source voltage of MOSFET_L and flow through resistance R3_l, works as electricity
Pressure drop when stream reaches certain value on R3_l is more than that T_l is connected in the threshold voltage of T_l, and capacitor C2_l, which is connected in circuit, to be provided
One low impedance path absorbs the extra energy of due to voltage spikes.Due to voltage spikes reduces after reaching maximum, and leakage current reduces, R3_
Pressure drop VR3_l on l cannot be such that pnp transistor T_l is connected.Since pnp transistor T is only to C2 charging or due to voltage spikes
It is just connected when appearance, so the conduction loss very little generated.
Voltage on Rg, Rin and Cgs is-(VC1+VR3), and VR3 is about 0.7V, so the influence to negative pressure value is little.
When T_l conducting, npn transistor collector-emitter voltage drop is (VC1_l+VC2_l+
VR3_l), according to the working principle of pnp transistor, collector current IC=β Ib, emitter current Ie=Ib+Ic, wherein β
It is the dc amplification coefficient of pnp transistor, therefore the maximum current that can pass through on C2 depends on the maximum collection that pnp transistor can be born
Electrode current.Suitable pnp transistor is selected, C2 can absorb most of leakage current.
The rising of size and different gate drive circuit gate source voltages to the gate source voltage spike of low side SiC MOSFET
Decrease speed is emulated relatively as shown in table 1, according to comparison it is found that the improved present invention inhibits SiC MOSFET grid string
The driving circuit disturbed is capable of the generation of effective suppressor grid crosstalk.The negative voltage spike of conventional driving circuit reached-
12.4V.Improved driving circuit inhibits negative voltage spike in -8V, the disadvantage is that slightly increasing within the scope of proper device operation
The switch time of device is added, service time increases 23.7ns, and the turn-off time increases 16.1ns.
The comparison of table 1. present invention and the grid source switch characterisitic parameter of the MOSFET of conventional gate drive circuit
| Gate drive circuit | Maximum positive voltage spike | Maximum negative voltage spike | Service time | Turn-off time |
| Existing gate drive circuit | -1.0V | -12.4V | 154ns | 149ns |
| Gate drive circuit of the present invention | -3.2V | -8V | 214.1ns | 190.3ns |
Claims (5)
1. it is a kind of inhibit SiC MOSFET grid crosstalk driving circuit, which is characterized in that including the first-the four resistance (R1,
R2, R3, Rg), the first-third capacitor (C1, C2, C3), first diode (D1), the second diode (D2) and a pnp crystal
It manages (T), the output end of the driving signal amplifying circuit of front end and prime after first resistor (R1) is in parallel with first capacitor (C1)
Connection, the anode of the rear end of first resistor (R1) and first capacitor (C1) and first diode (D1), the second capacitor (C2) are just
Pole is connected with the front end of the 4th resistance (Rg), and the cathode of first diode (D1) passes through the ground connection of second resistance (R2) and prime
End, the positive of the base stage of pnp transistor (T), the second diode (D2) connect with the front end of 3rd resistor (R3), the second capacitor
(C2) cathode is connect with the collector of pnp transistor (T), the emitter of pnp transistor (T) and bearing for the second diode (D2)
The ground terminal of pole, the rear end of 3rd resistor (R3) and circuit rear class connects；The rear end of 4th resistance (Rg) and SiC MOSFET
Grid connection, be connected with third capacitor (C3), third capacitor between the grid and rear pole ground terminal of the SiC MOSFET
(C3) capacitance must be greater than the equivalent capacity (Cgs) between SiC MOSFET grid source.
2. inhibiting the driving circuit of SiC MOSFET grid crosstalk as described in claim 1, which is characterized in that first resistor
(R1) and second resistance (R2) constitutes a bleeder circuit, and the voltage in first resistor (R1) charges to first capacitor (C1), root
The voltage value on first capacitor (C1), first capacitor (C1) can be determined according to the ratio of first resistor (R1) and second resistance (R2)
On voltage will provide negative pressure during SiC MOS is turned off, provide negative shutdown voltage without additional voltage source；First
The value of capacitor (C1) needs sufficiently large to keep negative shutdown voltage constant.
3. inhibiting the driving circuit of SiC MOSFET grid crosstalk as described in claim 1, which is characterized in that first diode
(D1) to provide current discharge access when SiC MOSFET closing, accelerate the turn-off speed of SiC MOSFET.
4. inhibiting the driving circuit of SiC MOSFET grid crosstalk as described in claim 1, which is characterized in that 3rd resistor
(R3) pnp transistor (T) is opened when negative voltage spike occurs, with the second capacitor (C2) concatenated pnp transistor (T) in voltage
Unlatching when spike occurs, provides a low impedance path, and the second capacitor (C2) will absorb the energy for the due to voltage spikes that crosstalk generates.
5. SiC MOSFET grid clutter reduction driving circuit as described in claim 1, which is characterized in that reach better
Clutter reduction effect, the capacitance of third capacitor (C3) are 1-3 μ F.
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| CN110601684A (en) * | 2019-09-03 | 2019-12-20 | 中国航空工业集团公司沈阳飞机设计研究所 | Driving circuit |
| CN110632489A (en) * | 2019-09-03 | 2019-12-31 | 清华大学 | Leakage current-based IGBT junction temperature monitoring circuit and method |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN111614234A (en) * | 2020-05-27 | 2020-09-01 | 电子科技大学 | Silicon carbide MOSFET bridge arm crosstalk suppression circuit |
| CN111725978A (en) * | 2020-07-02 | 2020-09-29 | 杭州电子科技大学 | SiC MOSFET gate drive circuit with negative voltage turn-off and crosstalk suppression functions |
| CN112422115A (en) * | 2021-01-05 | 2021-02-26 | 福州大学 | Drive circuit for realizing negative pressure turn-off based on MOSFET and control method |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110632489A (en) * | 2019-09-03 | 2019-12-31 | 清华大学 | Leakage current-based IGBT junction temperature monitoring circuit and method |
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| CN112422115A (en) * | 2021-01-05 | 2021-02-26 | 福州大学 | Drive circuit for realizing negative pressure turn-off based on MOSFET and control method |
| CN112422115B (en) * | 2021-01-05 | 2023-10-20 | 福州大学 | Driving circuit for realizing negative-pressure turn-off based on MOSFET and control method |
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| CN113937989B (en) * | 2021-11-16 | 2023-09-01 | 西安电子科技大学 | Driving circuit and method for inhibiting SiC MOSFET crosstalk and drain current overshoot |
| CN113937989A (en) * | 2021-11-16 | 2022-01-14 | 西安电子科技大学 | Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor) |
| CN113965055A (en) * | 2021-11-29 | 2022-01-21 | 西安科技大学 | Resonant gate drive circuit with crosstalk suppression and drive method thereof |
| CN113965055B (en) * | 2021-11-29 | 2024-02-23 | 西安科技大学 | Resonant gate driving circuit with crosstalk suppression and driving method thereof |
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Application publication date: 20190723 |
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