CN112422115A - Drive circuit for realizing negative pressure turn-off based on MOSFET and control method - Google Patents
Drive circuit for realizing negative pressure turn-off based on MOSFET and control method Download PDFInfo
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- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention relates to a drive circuit for realizing negative pressure turn-off based on MOSFET (metal-oxide-semiconductor field effect transistor), which comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first triode, a second triode, a third triode, a fourth triode, a MOSFET (metal-oxide-semiconductor field effect transistor), a voltage regulator tube, a diode and a bidirectional voltage regulator tube, wherein the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor, the first; the invention has better dynamic performance, certain protection capability, can realize negative pressure shutoff, reduce shutoff time and shutoff loss and ensure the safe operation of the switch tube.
Description
Technical Field
The invention relates to the field of switch tube driving circuits, in particular to a driving circuit for realizing negative voltage turn-off based on a metal-oxide-semiconductor field effect transistor (MOSFET) and a control method.
Background
With the development of power electronics, various fully-controlled switching devices have been widely used, power transistors (GTR) and Insulated Gate Bipolar Transistors (IGBT) are commonly used in high-power situations, and Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are commonly used in medium-low power situations. The power MOSFET is a voltage-controlled device, only needs a small driving current, has very high switching speed and is very suitable for working in a high-frequency environment. The driving circuit is an important part of the power converter, and is used for driving the switching device. The output of the converter depends on the operating state of the driver circuit, which is therefore a key factor in achieving the desired output of the converter.
Disclosure of Invention
In view of this, the present invention provides a driving circuit and a control method for realizing negative voltage turn-off based on a MOSFET, so as to ensure reliable turn-on and turn-off of a MOSFET switch tube and improve reliability of the driving circuit.
In order to achieve the purpose, the invention adopts the following technical scheme:
a drive circuit for realizing negative pressure turn-off based on MOSFET comprises a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first triode, a second triode, a third triode, a fourth triode, a MOSFET, a voltage regulator tube, a diode and a bidirectional voltage regulator tube; the positive electrode of the input end PWM signal is connected with one end of the first resistor and one end of the first capacitor; the other end of the first resistor and the other end of the first capacitor are respectively connected with a base terminal of the first triode; a collector terminal of the first triode is connected with one end of the second resistor and a base terminal of the second triode respectively; the other end of the second resistor is connected with one end of a third resistor, an anode end of a direct-current power supply, a cathode end of a voltage stabilizer, one end of a second capacitor, one end of a fourth capacitor and a collector electrode of a third triode respectively; the emitter of the first triode is respectively connected with the emitter of the second triode, the cathode end of the direct-current power supply, one end of the fourth resistor, one end of the fifth resistor, one end of the third capacitor, one end of the fifth capacitor and the collector of the fourth triode; the other end of the third resistor is connected with a collector terminal of the second triode and one end of the seventh resistor; the other end of the seventh resistor is connected with a base electrode end of the third triode and a base electrode end of the fourth triode; an emitting electrode of the third triode is respectively connected with an emitting electrode of the fourth triode, a cathode of the diode and one end of the sixth resistor; the anode of the diode is connected with the other end of the sixth resistor, the anode end of the bidirectional voltage-stabilizing tube and the gate end of the MOSFET tube respectively; the cathode electrode terminal of the bidirectional voltage stabilizing tube is connected with the drain terminal of the MOSFET tube; the anode of the diode, the other end of the second capacitor, the other end of the fourth resistor, the other end of the fifth resistor, the other end of the third capacitor and the other end of the fifth capacitor are all grounded.
Further, the first capacitor is a filter capacitor, and the first resistor is a filter resistor; the circuit utilizes a filter capacitor and a filter resistor to filter high-frequency noise signals in PWM signals input by the microprocessor.
Further, the first triode, the second triode and the third triode are NPN triodes; the fourth triode is a PNP triode.
Furthermore, the first triode and the second triode amplify the input PWM signal in a two-stage regulation mode, and enable the driving signal to be in phase with the PWM output signal.
Furthermore, decoupling capacitors are adopted by the second capacitor, the third capacitor, the fourth capacitor and the fifth capacitor.
A control method of a drive circuit for realizing negative voltage turn-off based on a MOSFET (metal-oxide-semiconductor field effect transistor) comprises the following steps:
filtering a high-frequency noise signal in the PWM signal input by the microprocessor through a first capacitor and a first resistor;
the first triode and the second triode amplify the input PWM signal in a two-stage regulation mode, and make the driving signal and the PWM output signal in phase;
dividing the direct current power supply according to the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor, the voltage regulator tube, the fourth resistor and the fifth resistor to form a stable power supply for providing positive voltage for the third triode and negative voltage for the fourth triode;
when the circuit PWM signal is at a high level, the base electrode of the third triode bears positive voltage, the collector electrode of the third triode bears positive voltage and is conducted, and the grid source electrode of the MOSFET bears positive voltage and is conducted; when the circuit PWM signal is at low level, the second triode is in saturation conduction, the base of the second triode is directly output by the voltage-stabilized power supply and is at the negative electrode, and the collector of the fourth triode bears negative pressure and is in conduction.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention ensures the reliable on and off of the MOSFET switch tube and improves the reliability of the drive circuit.
2. The invention only adopts simple discrete elements, does not need professional chips, has simple structure, is simple and easy to implement, has low price and high reliability, and is very suitable for MOSFET switch circuits.
3. The invention utilizes the voltage difference of the potential to the ground to ensure that the two diodes of the totem-pole are in a saturated state in the opening state, thereby reducing the loss.
Drawings
FIG. 1 is a driving circuit for realizing negative voltage turn-off of the MOSFET of the present invention;
FIG. 2 is a flow chart of the drive circuit of the present invention;
FIG. 3 is a model of the switching of a MOSFET in an embodiment of the present invention;
FIG. 4 is a MOSFET Q with a 66.7% duty cycle for the experimental test of FIG. 35Voltage U ofgsAnd current IsA waveform diagram;
FIG. 5 is an example of the application of the present invention to a CUK circuit;
FIG. 6 shows the voltage U of the test of FIG. 5R7And a DC power supply U1And (4) waveform diagrams.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Referring to fig. 1, the present invention provides a driving circuit for implementing negative voltage turn-off based on MOSFET, the circuit is composed of a filter capacitor C1Stabilized voltage supply capacitor C2、C3、C4、C5Filter resistance R1Resistance R2、R3、R6Current limiting resistor R7Voltage stabilizing resistor R4、R5DC power supply UdNPN triode Q1、Q2、Q3PNP triode Q4MOSFET Q5And a voltage stabilizing tube D1Diode D2And a bidirectional stabilivolt D3Forming; the positive pole of the input end PWM signal is connected with a resistor R1Anode terminal and capacitor C1The anode terminal of (1). Resistance R1Cathode terminal and capacitor C1The cathode end of the triode is connected with an NPN triode Q1Base terminal of (3), NPN triode Q1Collector terminal resistor R2Anode terminal of and NPN transistor Q2Base terminal of, resistance R2Cathode termination resistance R3Cathode terminal and DC power supply UdThe anode terminal of the NPN triode Q1、Q2Emitter terminal of (3) is connected with a direct current power supply UdThe negative terminal of the transistor, NPN triode Q2Collector terminal resistor R3Anode terminal of, resistance R3The cathode of the triode is connected with an NPN triode Q3And PNP triode Q4Base terminal of (3), NPN triode Q3Collector terminal decoupling capacitor C2、C4And a voltage stabilizing tube D1And a DC power supply UdAnode, PNP triode Q4Collector terminal decoupling capacitor C3、C5Voltage stabilizing resistor R4、R5And a DC power supply UdCathode, stabilivolt D1And a decoupling capacitor C2、C4Parallel connection with cathode connected with voltage stabilizing resistor R4、R5And a decoupling power supply capacitor C3、C5And the anode of the NPN triode Q is grounded3And PNP triode Q4Emitter connecting resistor R6And a diode D2Anode terminal of, resistance R6And a diode D2Is terminated at the protective resistor R7Bidirectional voltage-stabilizing tube D3Anode terminal of and MOSFET transistor Q5Gate terminal of MOSFET tube Q5Drain side bi-directional stabilivolt D3The cathode terminal of (1).
In this embodiment, the circuit preferably utilizes a filter capacitor C1And a filter resistor R1Filtering high-frequency noise signals in PWM signals input by a microprocessor, wherein a general filter resistor is 330 omega, and a filter capacitor C1Taking 0.1 muF, two NPN triodes Q1And Q2The two-stage regulation amplifies the input PWM signal and brings the drive signal in phase with the PWM output signal.
In this embodiment, the circuit preferably utilizes a decoupling capacitor C2、C3、C4、C5The decoupling capacitor is generally a 100 muF electrolytic capacitor with large capacity and then a 0.1 muF ceramic chip capacitor with small capacity and a voltage stabilizing tube D1And a voltage stabilizing resistor R4、R5For DC power supply UdVoltage division is carried out, a voltage stabilizing tube is selected from 1N4744, and a stable power supply is formed and is an NPN triode Q3Providing positive voltage and being PNP triode Q4Providing negative pressure, DC power supply UdIs two NPN triodes Q1And Q2A power supply is provided.
In this embodiment, it is preferable that the NPN transistor Q is operated when the circuit PWM signal is at a high level3NPN triode Q with base bearing positive voltage3The collector bears positive pressure and is conducted, and the MOSFET tube Q5Gate source UgsThe circuit is conducted by bearing forward voltage; when the circuit PWM signal is at low level, NPN triode Q2Saturation conduction, PNP base direct stabilized voltage supply output cathode, PNP triode Q4The collector electrode bears negative pressure and is conducted, and the design ensures that the MOSFET Q is connected5And speed up the turn-on and turn-off speed.
In this embodiment, preferably, the circuit may have a resonance problem due to the trace inductance and the junction capacitance in the MOSFET, which causes the driving signal oscillation to affect the on/off of the switching tube, and increases the resistance R6Resonance can be avoided. Diode D in the circuit diagram2The effect is to accelerate the discharge circuit. The bidirectional regulator tube is used for voltage clamping and aims to protect the MOSFET from being damaged due to out-of-control of a driving signal.
Example 1:
referring to fig. 5, in the present embodiment, the system includes a main circuit CUK circuit and a drive circuit in which a MOSFET implements negative voltage turn-off.
In this embodiment, the main circuit is a CUK circuit, which reduces the dc voltage of 12V to 5V from the input dc voltage source U1Inductance L1Filter inductance L2Diode D4Filter capacitor C6Energy transfer capacitance C7Load resistance R7The composition is as follows. Wherein the DC voltage source U1Anode of (2) is connected with an inductor L1Anode of (2), inductor L1Cathode of the MOSFET is connected with the MOSFET Q5Drain electrode and energy transfer capacitor C7Anode of (2), capacitor C7Cathode of the filter is connected with the cathode of the diode and the filter inductor L2Anode of (2), filter inductor L2Cathode of the filter capacitor C6And a load resistance R7Anode of (2), filter capacitor C6Load resistance R7Cathode of diode, anode of diode, MOSFET transistor Q5The source of the power supply is connected with the negative pole of the power supply and grounded. The working principle of the main circuit can be divided into 2 modes, namely a MOSFET Q5On, mode 1 is turned on. The input current flows through the inductor L1And MOSFET Q5Inductance L1Charging while the capacitor C is charged7Voltage on diode D4Direction cut-off, during which the storage is at C7Energy in (1) through C6，C7Load and L2And (4) discharging. At t ═ t1Time Q5Off, mode 2 is on. Capacitor C7Charged by input power and stored at L2To the load. Energy transfer capacitor C of main circuit7Taking 200 mu F and a filter capacitor C6Taking 350 mu F and inductance L1Take 180 muH, filter inductance L2The load resistance was 10 Ω at 150 μ H.
In the embodiment, the drive circuit for realizing the negative voltage turn-off of the MOSFET is composed of a filter capacitor C1And a decoupling power supply capacitor C2、C3、C4、C5Filter resistor R1Resistance R2、R3、R6Current limiting resistor R7Voltage stabilizing resistor R4、R5DC power supply UdNPN triode Q1、Q2、Q3PNP triode Q4MOSFET Q5And a voltage stabilizing tube D1Diode D2And a bidirectional stabilivolt D3Forming; the positive pole of the input end PWM signal is connected with a resistor R1Anode terminal and capacitor C1The anode terminal of (1). Resistance R1Cathode terminal and capacitor C1The cathode end of the triode is connected with an NPN triode Q1Base terminal of (3), NPN triode Q1Collector terminal resistor R2Anode terminal of and NPN transistor Q2Base terminal of, resistance R2Cathode termination resistance R3Cathode terminal and DC power supply UdThe anode terminal of the NPN triode Q1、Q2Emitter terminal of (3) is connected with a direct current power supply UdThe negative terminal of the transistor, NPN triode Q2Collector terminal resistor R3Anode terminal and resistor R7Anode terminal of, resistance R7The cathode of the triode is connected with an NPN triode Q3And PNP triode Q4Base terminal of (3), NPN triode Q3Collector terminal of the capacitor is connected with a voltage-stabilized source capacitor C2、C4And a voltage stabilizing tube D1And a DC power supply UdAnode, PNP triode Q4Collector terminal of the capacitor is connected with a voltage-stabilized source capacitor C3、C5Voltage stabilizing resistor R4、R5And a DC power supply UdCathode, stabilivolt D1And a voltage power supply capacitor C2、C4Parallel connection with cathode connected with voltage stabilizing resistor R4、R5Stabilized voltage supply capacitor C3、C5And the anode of the NPN triode Q is grounded3And PNP triode Q4Emitter connecting resistor R6And a diode D2Anode terminal of, resistance R6And a diode D2The cathode is connected with a bidirectional voltage-stabilizing tube D3Anode terminal of and MOSFET transistor Q5Gate terminal of MOSFET tube Q5The drain end of the voltage stabilizing tube is connected with a bidirectional voltage stabilizing tube D3The cathode terminal of (1).
Preferably, in the present embodiment, the filter capacitor C1And a filter resistor R1Two NPN triodes Q for filtering high-frequency noise signals in PWM signals input by microprocessor1And Q2The two-stage regulation amplifies the input PWM signal and brings the drive signal in phase with the PWM output signal. The circuit utilizes a decoupling capacitor C2、C3、C4、C5Voltage regulator tube D1And a voltage stabilizing resistor R4、R5For DC power supply UdPerforming voltage division to form a stable power supply which is an NPN triode Q3Providing positive voltage and being PNP triode Q4Providing negative pressure, DC power supply UdIs two NPN triodes Q1And Q2A power supply is provided. NPN triode Q when circuit PWM signal is at high level3NPN triode Q with base bearing positive voltage3The collector bears positive pressure and is conducted, and the MOSFET tube Q5Gate source UgsThe circuit is conducted by bearing forward voltage; when the circuit PWM signal is at low level, NPN triode Q2Saturation conduction, PNP base direct stabilized voltage supply output cathode, PNP triode Q4The collector electrode bears negative pressure and is conducted, and the design ensures that the MOSFET Q is connected5And speed up the turn-on and turn-off speed. The circuit has the resonance problem due to the routing inductance and the junction capacitance in the MOSFET, so that the on-off of the switching tube is influenced by the driving signal oscillation, and the resistance R is increased6Resonance can be avoided. Diode D in the circuit diagram2The effect is to accelerate the discharge circuit. The bidirectional regulator tube is used for voltage clamping and aims to protect the MOSFET from being damaged due to out-of-control of a driving signal.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (6)
1. A drive circuit for realizing negative pressure turn-off based on MOSFET is characterized by comprising a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a first triode, a second triode, a third triode, a fourth triode, a MOSFET, a voltage regulator tube, a diode and a bidirectional voltage regulator tube; the positive electrode of the input end PWM signal is connected with one end of the first resistor and one end of the first capacitor; the other end of the first resistor and the other end of the first capacitor are respectively connected with a base terminal of the first triode; a collector terminal of the first triode is connected with one end of the second resistor and a base terminal of the second triode respectively; the other end of the second resistor is connected with one end of a third resistor, an anode end of a direct-current power supply, a cathode end of a voltage stabilizer, one end of a second capacitor, one end of a fourth capacitor and a collector electrode of a third triode respectively; the emitter of the first triode is respectively connected with the emitter of the second triode, the cathode end of the direct-current power supply, one end of the fourth resistor, one end of the fifth resistor, one end of the third capacitor, one end of the fifth capacitor and the collector of the fourth triode; the other end of the third resistor is connected with a collector terminal of the second triode and one end of the seventh resistor; the other end of the seventh resistor is connected with a base electrode end of the third triode and a base electrode end of the fourth triode; an emitting electrode of the third triode is respectively connected with an emitting electrode of the fourth triode, a cathode of the diode and one end of the sixth resistor; the anode of the diode is connected with the other end of the sixth resistor, the anode end of the bidirectional voltage-stabilizing tube and the gate end of the MOSFET tube respectively; the cathode electrode terminal of the bidirectional voltage stabilizing tube is connected with the drain terminal of the MOSFET tube; the anode of the diode, the other end of the second capacitor, the other end of the fourth resistor, the other end of the fifth resistor, the other end of the third capacitor and the other end of the fifth capacitor are all grounded.
2. The MOSFET-based driving circuit for realizing negative voltage turn-off according to claim 1, wherein the first capacitor is a filter capacitor, and the first resistor is a filter resistor; the circuit utilizes a filter capacitor and a filter resistor to filter high-frequency noise signals in PWM signals input by the microprocessor.
3. The MOSFET based driver circuit of claim 1, wherein the first transistor, the second transistor, and the third transistor are NPN transistors; the fourth triode is a PNP triode.
4. The MOSFET-based driving circuit for achieving negative voltage turn-off as claimed in claim 1, wherein the first transistor and the second transistor amplify the input PWM signal in a two-stage regulation manner, and make the driving signal in phase with the PWM output signal.
5. The MOSFET-based driving circuit for switching off the negative voltage as claimed in claim 1, wherein: and decoupling capacitors are adopted by the second capacitor, the third capacitor, the fourth capacitor and the fifth capacitor.
6. A control method of a drive circuit for realizing negative voltage turn-off based on MOSFET is characterized by comprising the following steps:
filtering a high-frequency noise signal in the PWM signal input by the microprocessor through a first capacitor and a first resistor;
the first triode and the second triode amplify the input PWM signal in a two-stage regulation mode, and make the driving signal and the PWM output signal in phase;
dividing the direct current power supply according to the second capacitor, the third capacitor, the fourth capacitor, the fifth capacitor, the voltage regulator tube, the fourth resistor and the fifth resistor to form a stable power supply for providing positive voltage for the third triode and negative voltage for the fourth triode;
when the circuit PWM signal is at a high level, the base electrode of the third triode bears positive voltage, the collector electrode of the third triode bears positive voltage and is conducted, and the grid source electrode of the MOSFET bears positive voltage and is conducted; when the circuit PWM signal is at low level, the second triode is in saturation conduction, the base of the second triode is directly output by the voltage-stabilized power supply and is at the negative electrode, and the collector of the fourth triode bears negative pressure and is in conduction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011381495.9A CN112422115B (en) | 2021-01-05 | 2021-01-05 | Driving circuit for realizing negative-pressure turn-off based on MOSFET and control method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011381495.9A CN112422115B (en) | 2021-01-05 | 2021-01-05 | Driving circuit for realizing negative-pressure turn-off based on MOSFET and control method |
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| CN112422115B CN112422115B (en) | 2023-10-20 |
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2021
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