CN113937989A - Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor) - Google Patents

Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Download PDF

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CN113937989A
CN113937989A CN202111357518.7A CN202111357518A CN113937989A CN 113937989 A CN113937989 A CN 113937989A CN 202111357518 A CN202111357518 A CN 202111357518A CN 113937989 A CN113937989 A CN 113937989A
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source
crosstalk
overshoot
sic mosfet
drain current
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CN113937989B (en
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马海伦
刘莉
钟铭浩
何佳俊
郭建飞
李�浩
常帅军
王梓名
欧树基
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Xidian University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention relates to the technical field of wide-bandgap semiconductor device driving, and discloses a driving circuit for inhibiting crosstalk and drain current overshoot of a SiCSMOSFET (silicon-on-insulator metal-oxide-semiconductor field effect transistor). A power supply voltage source V2_ H is introduced into a basic driving circuit of an upper bridge arm, and a power supply voltage source V2_ L is introduced into a basic driving circuit of a lower bridge arm and a crosstalk and overshoot inhibiting circuit. The voltage of the capacitor C2 is stabilized through the driving circuit, and the voltage of the common-source parasitic inductor Ls _ L is clamped, so that the decoupling of Ls _ L is realized. The invention does not introduce extra active devices and controllers, and has high reliability; excessive transistors are not introduced, and the structure is simple; extra capacitance and resistance are not introduced into the driving loop, and the switching speed is not influenced; the influence caused by parasitic inductance of the source end is inhibited, negative voltage turn-off is increased, possible misconduction of the device is avoided, the phenomena of crosstalk voltage of a grid source electrode and overshoot of drain current are inhibited, and extra power loss is avoided as far as possible by controlling the time for the capacitor to be connected into a loop through the switch.

Description

Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor)
Technical Field
The invention relates to the technical field of wide bandgap semiconductor device driving, in particular to a driving circuit and a method for inhibiting crosstalk and drain current overshoot of a SiC MOSFET.
Background
As a representative device of the third generation wide bandgap semiconductor, the SiC MOSFET has significant advantages of high switching speed, low turn-off loss, high withstand voltage, and the like, and is an effective way to improve the performance such as the efficiency and the power density of the power converter. However, due to the high switching speed of SiC MOSFETs and the presence of parasitic capacitance and the like, changes in either current or voltage cause variations in the gate potential. Particularly, when crosstalk occurs, the parasitic inductance of the source end causes a potential of the source end to change greatly, which causes interference to the gate and the source, thereby affecting the working state of the MOS transistor, and possibly causing misconduction and even damage of the device under severe conditions. Meanwhile, the drain current has a current overshoot problem due to the influence of parasitic parameters, and the damage of the device can be caused by the excessive drain current. Therefore, in the SiC MOSFET bridge circuit, attention needs to be paid to the problems of crosstalk and drain current overshoot.
CN113315354A discloses a low impedance clamp driving circuit for suppressing SiC MOSFET crosstalk, which includes an SiC MOSFET upper bridge arm and an SiC MOSFET lower bridge arm, where each bridge arm includes a basic driving circuit and a crosstalk suppression circuit, so as to ensure that in the same bridge arm, the SiC MOSFET is not misconducted when positive crosstalk occurs, and reverse breakdown does not occur when negative crosstalk occurs. However, the crosstalk suppression structure of the CN113315354A solution is mainly located at two ends of the gate source of the MOSFET, and extra resistance and capacitance are introduced in the driving loop, which may affect the switching speed of the MOSFET.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a driving circuit and method for suppressing SiC MOSFET crosstalk and drain current overshoot.
In order to achieve the above object, an aspect of the present invention relates to a driving circuit for suppressing SiC MOSFET crosstalk and drain current overshoot, and the specific scheme is as follows:
the drive circuit for inhibiting the crosstalk and the overshoot of the drain current of the SiC MOSFET comprises an upper bridge arm and a lower bridge arm of the SiC MOSFET, wherein the upper bridge arm only has a basic drive circuit, the lower bridge arm comprises a basic drive circuit and a crosstalk and overshoot inhibition circuit, a power supply voltage source V2_ H is introduced into the basic drive circuit of the upper bridge arm, the negative electrode of the power supply voltage source V2_ H is simultaneously connected with the source electrode of a switching tube S2_ H and one end of an auxiliary capacitor C3, and the positive electrode of the power supply voltage source V2_ H is simultaneously connected with the negative electrode of a power supply voltage source V1_ H and one end of a common source parasitic inductor Ls _ H; and a power supply voltage source V2_ L is introduced into a basic driving circuit and a crosstalk and overshoot suppression circuit of the lower bridge arm, the negative electrode of the power supply voltage source V2_ L is simultaneously connected with the source of the switching tube S2_ L and one end of the auxiliary capacitor C2, and the positive electrode of the power supply voltage source V2_ L is simultaneously connected with the negative electrode of the power supply voltage source V1_ L, one end of the common-source parasitic inductor Ls _ L, one end of the capacitor C1 and the negative electrode of the diode D2.
Further, the basic driving circuit of the upper bridge arm further comprises a switching tube S1_ H and a gate resistor R4, the positive electrode of the power supply voltage source V1_ H is connected with the drain electrode of the switching tube S1_ H, the negative electrode of the power supply voltage source V1_ H is connected with one end of a common-source parasitic inductor Ls _ H of the upper bridge arm, and the other end of the common-source parasitic inductor Ls _ H is connected with one end of an auxiliary capacitor C3 and the source electrode of a SiC MOSFET M1; the source electrode of the switch tube S1_ H is connected with one end of the grid resistor R4 and the drain electrode of the switch tube S2_ H; the other end of the gate resistor R4 is connected to the gate of SiC MOSFET M1.
Further, the basic driving circuit of the lower bridge arm comprises a switching tube S1_ L and a gate resistor R1, the positive electrode of the power supply voltage source V1_ L is connected with the drain electrode of the switching tube S1_ L, the negative electrode of the power supply voltage source V1_ L is connected with one end of a common-source parasitic inductor Ls _ L of the lower bridge arm, and the other end of the common-source parasitic inductor Ls _ L is connected with the other end of the auxiliary capacitor C2 and the source electrode of the SiC MOSFET M2; the source electrode of the switching tube S1_ L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_ L; the other end of the gate resistor R1 is connected to the gate of SiC MOSFET M2.
Further, the crosstalk and overshoot suppression circuit of the lower bridge arm further comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3 and a triode Q1, wherein the cathode of the diode D1 is connected with the drain of the SiC MOSFET and the collector of the triode Q1, the anode of the diode D1 is connected with one end of a resistor R3 and the base of the triode Q1, the other end of the resistor R3 is connected with the emitter of the triode Q1, one end of the resistor R2 and the anode of the diode D2, and the other end of the resistor R2 is connected with the other end of the capacitor C1; the cathode of the diode D2 is also connected with one end of a common-source parasitic inductor Ls _ L, and one end of the diode D3 is connected with the drain of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance Ls _ L.
Preferably, the switching tube S1_ H, the switching tube S2_ H, the switching tube S1_ L, the switching tube S2_ L, and the transistor Q1 are all NPN transistors.
Preferably, the on-voltage and the off-voltage in the basic driving circuit are 18V and-5V respectively.
Another aspect of the invention relates to a method of suppressing SiC MOSFET crosstalk and drain current overshoot.
By adopting the drive circuit for inhibiting the crosstalk of the SiC MOSFET and the overshoot of the drain current, when the overshoot of the drain current occurs in a lower bridge arm, the reverse current flowing through the diode D1 is increased, so that the triode Q1 is opened, the capacitor C1 absorbs the drain current, the overshoot of the drain current is inhibited, the Miller capacitor current flowing through the SiC MOSFET M2 is reduced, and the gate crosstalk is reduced.
Further, voltage sources V2_ H and V2_ L are introduced to stabilize the voltage of the capacitor C2 and clamp the voltage of the common-source parasitic inductor Ls _ L, so as to achieve decoupling of Ls _ L.
Further, the switching signals of the switch S1_ H and the switch S2_ H are controlled to be complementary, and the switching signals of the switch S1_ L and the switch S2_ L are controlled to be complementary.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention does not introduce extra active devices and controllers, and has high reliability; excessive transistors are not introduced, and the structure is simple; extra capacitance and resistance are not introduced into the driving loop, and the switching speed is not influenced;
(2) the driving circuit provided by the invention not only inhibits the influence caused by parasitic inductance of the source end, but also increases negative voltage turn-off, avoids possible misconduction of devices, inhibits crosstalk voltage of a grid source electrode and overshoot of drain current, and simultaneously controls the time of accessing a capacitor into a loop through a switch, thereby avoiding extra power loss as much as possible.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a diagram of a driving circuit according to the present invention;
FIG. 2 is a conventional drive circuit switching waveform ("gate voltage Vg-time t" characteristic);
FIG. 3 is a waveform of a switch in the present invention ("gate voltage Vg-time t" characteristic);
FIG. 4 is a waveform of a drain current of a conventional driving circuit;
FIG. 5 is a drain current waveform in the present invention;
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the present invention.
As shown in fig. 1, a driving circuit for suppressing crosstalk and overshoot of drain current of a SiC MOSFET includes an upper bridge arm and a lower bridge arm of the SiC MOSFET, where the upper bridge arm has only a basic driving circuit, and the lower bridge arm includes the basic driving circuit and a crosstalk and overshoot suppression circuit.
The basic driving circuit of the upper bridge arm comprises a power supply voltage source V1_ H, a power supply voltage source V2_ H, a switching tube S1_ H, a switching tube S2_ H, a gate resistor R4 and an auxiliary capacitor C3. The anode of the power supply voltage source V1_ H is connected with the drain of the switch tube S1_ H; the negative electrode of the power supply voltage source V1_ H is connected with one end of a common-source parasitic inductor Ls _ H of the upper bridge arm; the other end of the common-source parasitic inductor Ls _ H is connected with one end of the auxiliary capacitor C3 and the source of the SiC MOSFET M1; the source electrode of the switch tube S1_ H is connected with one end of the grid resistor R4 and the drain electrode of the switch tube S2_ H; the other end of the gate resistor R4 is connected with the gate of the SiC MOSFET M1; the source electrode of the switch tube S2_ H is connected with the other end of the auxiliary capacitor C3 and the cathode of the power supply voltage source V2_ H; the anode of the supply voltage source V2_ H is connected to the cathode of the supply voltage source V1_ H and to one end of the common-source parasitic inductance Ls _ H.
The basic driving circuit of the lower bridge arm comprises a power supply voltage source V1_ L, a power supply voltage source V2_ L, a switching tube S1_ L, a switching tube S2_ L, a gate resistor R1 and an auxiliary capacitor C2; the anode of the power supply voltage source V1_ L is connected with the drain of the switch tube S1_ L; the negative electrode of the power supply voltage source V1_ H is connected with one end of a common-source parasitic inductor Ls _ L of the lower bridge arm; the other end of the common-source parasitic inductor Ls _ L is connected with one end of the auxiliary capacitor C2 and the source of the SiC MOSFET M2; the source electrode of the switching tube S1_ L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_ L; the other end of the gate resistor R1 is connected with the gate of the SiC MOSFET M2; the source electrode of the switching tube S2_ L is connected with the other end of the auxiliary capacitor C2 and the negative electrode of the power supply voltage source V2_ L; the anode of the power supply voltage source V2_ L is connected to the cathode of the power supply voltage source V1_ L and one end of the common-source parasitic inductor Ls _ L.
The crosstalk and overshoot suppression circuit of the lower bridge arm comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3, a triode Q1 and a capacitor C1; the cathode of the diode D1 is connected with the drain of the SiC MOSFET and the collector of the triode Q1; the anode of the diode D1 is connected with one end of the resistor R3 and the base of the triode Q1; the other end of the resistor R3 is connected with an emitter of the triode Q1, one end of the resistor R2 and the anode of the diode D2; the other end of the resistor R2 is connected with one end of the capacitor C1; the other end of the capacitor C1 is connected with one end of the common-source parasitic inductor Ls _ L and the anode of the power supply voltage source V2_ L; the cathode of the diode D2 is connected with one end of the common-source parasitic inductor Ls _ L and the anode of the power supply voltage source V2_ L; one end of the diode D3 is connected with the drain of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance Ls _ L.
The switching tube S1_ H, the switching tube S2_ H, the switching tube S1_ L, the switching tube S2_ L and the triode Q1 are all NPN triodes.
In this embodiment, the turn-on voltage of the basic driving circuit is 18V, and the turn-off voltage is-5V.
By adopting the drive circuit for inhibiting the crosstalk of the SiC MOSFET and the overshoot of the drain current, when the overshoot of the drain current occurs in a lower bridge arm, the reverse current flowing through the diode D1 is increased, so that the triode Q1 is opened, the capacitor C1 absorbs the drain current, the overshoot of the drain current is inhibited, the Miller capacitor current flowing through the SiC MOSFET M2 is reduced, and the gate crosstalk is reduced.
The voltage source V2_ H and the voltage source V2_ L are introduced, so that the voltage of the capacitor C2 is stabilized at-5V, the voltage of the common-source parasitic inductor Ls _ L is clamped, the decoupling of the Ls _ L is realized, the parasitic inductance of the source end of the power loop is greatly reduced, and the crosstalk caused by induced voltage due to the parasitic inductance of the source end is reduced.
The switch signals of the control switch S1_ H and the switch S2_ H are complementary, and the switch signals of the control switch S1_ L and the switch S2_ L are complementary. When the switch S1_ L is opened, the switch S2_ L is closed to provide a negative voltage for the MOSFET, so that the turn-off speed is accelerated, and meanwhile, the negative voltage is turned off to prevent misconduction caused by crosstalk. Specifically, when the forward crosstalk occurs, the reverse current of the diode D1 is suddenly increased, and the increased reverse current flows through the resistor R3 to generate a voltage drop, so that the transistor Q1 is turned on, a low-impedance branch is provided, and the current at the drain terminal is absorbed by the capacitor C1, so that the overshoot phenomenon of the drain current can be reduced, and meanwhile, the current flowing through the miller capacitor to the gate can be reduced, the voltage drop generated on the gate resistor can be reduced, and the forward crosstalk is suppressed.
When reverse crosstalk occurs, the switch S2_ L is turned on because the switch S1_ L is turned off, and the voltage source of-5V can directly clamp the gate and the source of the MOSFET to suppress the reverse crosstalk.
Fig. 2 shows switching waveforms of a conventional driving circuit, fig. 3 shows switching waveforms of the present invention, fig. 4 shows drain current waveforms of the conventional driving circuit, and fig. 5 shows drain current waveforms of the present invention. Both positive and negative crosstalk voltage spikes are seen to be suppressed.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (9)

1. The drive circuit is characterized by comprising an upper bridge arm and a lower bridge arm of the SiC MOSFET, wherein the upper bridge arm only has a basic drive circuit, the lower bridge arm comprises the basic drive circuit and a crosstalk and overshoot suppression circuit, a power supply voltage source V2_ H is introduced into the basic drive circuit of the upper bridge arm, the negative electrode of the power supply voltage source V2_ H is simultaneously connected with the source electrode of a switching tube S2_ H and one end of an auxiliary capacitor C3, and the positive electrode of the power supply voltage source V2_ H is simultaneously connected with the negative electrode of a power supply voltage source V1_ H and one end of a common source parasitic inductor Ls _ H; and a power supply voltage source V2_ L is introduced into a basic driving circuit and a crosstalk and overshoot suppression circuit of the lower bridge arm, the negative electrode of the power supply voltage source V2_ L is simultaneously connected with the source of the switching tube S2_ L and one end of the auxiliary capacitor C2, and the positive electrode of the power supply voltage source V2_ L is simultaneously connected with the negative electrode of the power supply voltage source V1_ L, one end of the common-source parasitic inductor Ls _ L, one end of the capacitor C1 and the negative electrode of the diode D2.
2. The driving circuit for suppressing crosstalk and overshoot of drain current of SiC MOSFET as claimed in claim 1, wherein said basic driving circuit of upper bridge arm further comprises a switching tube S1_ H and a gate resistor R4, wherein the positive pole of said supply voltage source V1_ H is connected to the drain of switching tube S1_ H, the negative pole of supply voltage source V1_ H is connected to one end of a common source parasitic inductance Ls _ H of upper bridge arm, and the other end of said common source parasitic inductance Ls _ H is connected to one end of an auxiliary capacitor C3 and the source of SiC MOSFET M1; the source electrode of the switch tube S1_ H is connected with one end of the grid resistor R4 and the drain electrode of the switch tube S2_ H; the other end of the gate resistor R4 is connected to the gate of SiC MOSFET M1.
3. The driving circuit for suppressing crosstalk and drain current overshoot of the SiC MOSFET of claim 1, wherein the basic driving circuit of the lower bridge arm comprises a switching tube S1_ L and a gate resistor R1, the positive pole of the supply voltage source V1_ L is connected to the drain of the switching tube S1_ L, the negative pole of the supply voltage source V1_ L is connected to one end of a common-source parasitic inductor Ls _ L of the lower bridge arm, and the other end of the common-source parasitic inductor Ls _ L is connected to the other end of the auxiliary capacitor C2 and the source of the SiC MOSFET M2; the source electrode of the switching tube S1_ L is connected with one end of the grid resistor R1 and the drain electrode of the switching tube S2_ L; the other end of the gate resistor R1 is connected to the gate of SiC MOSFET M2.
4. The driving circuit for suppressing crosstalk and drain current overshoot of a SiC MOSFET according to claim 1, wherein the crosstalk and overshoot suppression circuit of the lower bridge arm further comprises a diode D1, a diode D2, a diode D3, a resistor R2, a resistor R3, and a transistor Q1, wherein a cathode of the diode D1 is connected to the drain of the SiC MOSFET and a collector of the transistor Q1, an anode of the diode D1 is connected to one end of a resistor R3 and a base of the transistor Q1, another end of the resistor R3 is connected to an emitter of the transistor Q1, one end of the resistor R2 and an anode of the diode D2, and another end of the resistor R2 is connected to another end of the capacitor C1; the cathode of the diode D2 is also connected with one end of a common-source parasitic inductor Ls _ L, and one end of the diode D3 is connected with the drain of the SiC MOSFET M2; the other end of the diode D3 is connected to one end of the common-source parasitic inductance Ls _ L.
5. The driving circuit for suppressing crosstalk and overshoot of drain current of SiC MOSFET of claim 1, wherein the switch transistor S1_ H, the switch transistor S2_ H, the switch transistor S1_ L, the switch transistor S2_ L, and the transistor Q1 are all NPN transistors.
6. The drive circuit for suppressing SiC MOSFET crosstalk and drain current overshoot according to claim 1, wherein the turn-on voltage in the basic drive circuit is 18V and the turn-off voltage is-5V.
7. The method for suppressing the crosstalk and the overshoot of the drain current of the SiC MOSFET is characterized in that the drive circuit for suppressing the crosstalk and the overshoot of the drain current of the SiC MOSFET as claimed in any one of claims 1 to 6 is adopted, when the overshoot of the drain current occurs in a lower bridge arm, the reverse current flowing through a diode D1 is increased, a triode Q1 is opened, a capacitor C1 absorbs the drain current, the overshoot of the drain current is suppressed, and the Miller capacitor current flowing through an SiC MOSFET M2 is reduced, so that the gate crosstalk is reduced.
8. The method for suppressing the crosstalk and the overshoot of the drain current of the SiC MOSFET is characterized in that a voltage source V2_ H and a voltage source V2_ L are introduced into the driving circuit for suppressing the crosstalk and the overshoot of the drain current of the SiC MOSFET as claimed in any one of claims 1 to 6, so that the voltage of a capacitor C2 is stabilized, and the voltage of a common-source parasitic inductor Ls _ L is clamped, so that the decoupling of Ls _ L is realized.
9. The method of claim 8, wherein the switch signals for controlling the switch S1_ H and the switch S2_ H are complementary, and the switch signals for controlling the switch S1_ L and the switch S2_ L are complementary.
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