CN111987889A - Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply - Google Patents
Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply Download PDFInfo
- Publication number
- CN111987889A CN111987889A CN202010754390.7A CN202010754390A CN111987889A CN 111987889 A CN111987889 A CN 111987889A CN 202010754390 A CN202010754390 A CN 202010754390A CN 111987889 A CN111987889 A CN 111987889A
- Authority
- CN
- China
- Prior art keywords
- mos tube
- resistor
- sic
- sic mosfet
- driving circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses a single-power-supply multi-level SiC MOSFET driving circuit which comprises a driven SiC MOS tube, a driving chip, a resistor Rg, a resistor Rc, an MOS tube M and a diode D. The driving circuit adopts 4-level driving, and avoids the problem of false conduction caused by the switching-on process of another SiC MOSFET of a bridge arm by adopting negative pressure at the beginning of switching-off; by adopting zero voltage after the turn-off is completed, the problem of SiC MOSFET failure caused by negative voltage spike is avoided. In addition, higher switching speeds can be achieved when switching on and off.
Description
Technical Field
The invention belongs to the technical field of electronic driving, and particularly relates to a multi-level SiC MOSFET driving circuit.
Background
SiC MOSFETs have a very high switching speed relative to Si MOSFETs. However, the drive voltage threshold of SiC MOSFETs is low and the gate has poor ability to withstand negative voltages. In conventional bridge-arm circuit configurations, fast switching can cause a very significant voltage spike in the gate voltage of another switching device. The positive voltage spike is likely to cause false turn-on, and the negative voltage spike is likely to cause failure of the SiC MOSFET.
At present, most of common SiC MOSFET driving circuits adopt negative voltage turn-off to inhibit false turn-on. However, in this driving method, the negative pressure spike becomes more likely to cause device failure, and it is necessary to perform crosstalk suppression. Most of driving circuits with a crosstalk suppression function in the prior art are complex and need to be powered by multiple power supplies, and a simple method for suppressing crosstalk is urgently needed, so that the potential performance of the SiC MOSFET is exerted.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a multi-level SiC MOSFET driving circuit powered by a single power supply, and the driving circuit adopts 4-level driving. By adopting negative pressure at the beginning of turn-off, the problem of false turn-on caused by the turn-on process of the other SiC MOSFET of the bridge arm is avoided; by adopting zero voltage after the turn-off is completed, the problem of SiC MOSFET failure caused by negative voltage spike is avoided. In addition, higher switching speeds can be achieved when switching on and off.
The technical scheme adopted by the invention for solving the technical problem comprises the following steps:
a single-power-supply multi-level SiC MOSFET driving circuit comprises a driven SiC MOS tube, a driving chip, a resistor Rg, a resistor Rc, an MOS tube M and a diode D;
one end of the resistor Rg is connected with the output end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
one end of the resistor Rc is connected with the power supply end of the driving chip, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the grounding end of the driving chip, and the Drain electrode of the MOS tube M is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode D is connected with the grounding end of the driving chip, and the cathode of the diode D is connected with the Source electrode of the driven SiC MOS tube;
preferably, the diode D is a zener diode.
The invention has the beneficial effects that:
1. the invention can realize the output of the 4-level driving signal under the condition that the driving circuit is powered by a single power supply.
2. According to the invention, the negative pressure is adopted at the switching-on moment of the other switching tube of the bridge arm to avoid the misconduction of the device;
3. according to the invention, zero voltage is adopted at the turn-off moment of the other switching tube of the bridge arm to avoid the failure of a device;
4. the circuit provided by the invention is simple and easy to implement and has lower cost;
5. the driving method adopts maximum voltage driving at the moment of switching on and switching off the driven SiC MOS tube, and can maximally improve the switching speed.
Drawings
Fig. 1 is a circuit diagram of the present invention.
Fig. 2 is a timing diagram of driving signals according to the present invention.
Fig. 3 is a graph showing the effect of suppressing the bridge arm crosstalk according to the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
As shown in FIG. 1, the invention provides a single-power-supply multi-level SiC MOSFET driving circuit, which comprises a driven SiC MOS tube, a driving chip, a resistor Rg, a resistor Rc, a MOS tube M and a diode D;
one end of the resistor Rg is connected with the output end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
one end of the resistor Rc is connected with the power supply end of the driving chip, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the grounding end of the driving chip, and the Drain electrode of the MOS tube M is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode D is connected with the grounding end of the driving chip, and the cathode of the diode D is connected with the Source electrode of the driven SiC MOS tube.
Example (b):
fig. 2 is a waveform timing diagram of the driving circuit of the present invention.
At the time t0, the MOS transistor M keeps the on state, and the driving chip turns on the driven SiC MOS transistor through the resistor Rg.
At the moment of t1, the MOS transistor M is turned off, Cgs discharges, the power supply end of the driving chip charges the junction capacitor of the MOS transistor M and the voltage stabilizing diode D through the resistor Rc, when the voltage at the two ends of the MOS transistor M reaches the voltage stabilizing value of the voltage stabilizing diode D, the voltage at the two ends of the MOS transistor M is clamped, and meanwhile, the voltage at the two ends of the Cgs is also clamped.
At time t2, the driving chip starts to turn off the driven SiC MOS transistor, and negative voltage turn-off is achieved by the zener diode D.
At time t3, the MOS transistor M is turned on, the junction capacitance of the MOS transistor M and the zener diode D is discharged through the MOS transistor M, the gate-level voltage of the driven SiC MOS transistor rises to 0, and the zero-voltage off state is maintained.
Fig. 3 is a diagram of the bridge arm crosstalk suppression effect of the driving circuit of the present invention, in which one SiC MOSFET in the same bridge arm is turned off, and after passing through a dead zone, the other SiC MOSFET is turned on, so that the forward disturbance caused by the negative voltage driving exists, and the situation of false turn-on is avoided. And negative disturbance caused by the turn-off of the other SiC MOSFET is turned off due to zero voltage, so that the failure of the SiC MOSFET is avoided.
Claims (2)
1. A single-power-supply multi-level SiC MOSFET drive circuit is characterized by comprising a driven SiC MOS tube, a drive chip, a resistor Rg, a resistor Rc, an MOS tube M and a diode D;
one end of the resistor Rg is connected with the output end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
one end of the resistor Rc is connected with the power supply end of the driving chip, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the grounding end of the driving chip, and the Drain electrode of the MOS tube M is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode D is connected with the grounding end of the driving chip, and the cathode of the diode D is connected with the Source electrode of the driven SiC MOS tube.
2. The single power supply multi-level SiC MOSFET driver circuit of claim 1 in which the diode D is a zener diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010754390.7A CN111987889A (en) | 2020-07-30 | 2020-07-30 | Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010754390.7A CN111987889A (en) | 2020-07-30 | 2020-07-30 | Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111987889A true CN111987889A (en) | 2020-11-24 |
Family
ID=73444809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010754390.7A Pending CN111987889A (en) | 2020-07-30 | 2020-07-30 | Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111987889A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113452250A (en) * | 2021-06-30 | 2021-09-28 | 东南大学 | Single-power-supply-driven multi-level double-inverter topological structure and control method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180191346A1 (en) * | 2016-12-29 | 2018-07-05 | Gn Hearing A/S | Output driver comprising mos swithces with adjustable back biasing |
| CN108539964A (en) * | 2018-08-08 | 2018-09-14 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
| CN111404411A (en) * | 2020-02-26 | 2020-07-10 | 北京交通大学 | Three-level active driving circuit for inhibiting crosstalk |
-
2020
- 2020-07-30 CN CN202010754390.7A patent/CN111987889A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180191346A1 (en) * | 2016-12-29 | 2018-07-05 | Gn Hearing A/S | Output driver comprising mos swithces with adjustable back biasing |
| CN108539964A (en) * | 2018-08-08 | 2018-09-14 | 上海颛芯企业管理咨询合伙企业（有限合伙） | The driving circuit and its device of power switch tube |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
| CN111404411A (en) * | 2020-02-26 | 2020-07-10 | 北京交通大学 | Three-level active driving circuit for inhibiting crosstalk |
Non-Patent Citations (2)
| Title |
|---|
| B. WANG ET AL.: "A Resonant Drive Circuit for GaN Power MOSHFET", 《CONFERENCE RECORD OF THE 2006 IEEE INDUSTRY APPLICATIONS CONFERENCE FORTY-FIRST IAS ANNUAL MEETING》, pages 364 - 368 * |
| 周帅 等: "大功率SiC-MOSFET 模块驱动技术研究", 《机车电传动》, no. 2, pages 26 - 31 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113452250A (en) * | 2021-06-30 | 2021-09-28 | 东南大学 | Single-power-supply-driven multi-level double-inverter topological structure and control method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11611339B2 (en) | Power switch drive circuit and device | |
| CN108683327B (en) | Silicon carbide MOSFET drive circuit | |
| US9755639B2 (en) | Device and method for an electronic circuit having a driver and rectifier | |
| CN111404411B (en) | Three-level active driving circuit for inhibiting crosstalk | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN107623512B (en) | Active Miller clamping protection circuit | |
| CN111162671B (en) | Multi-level active driving circuit for inhibiting SiC MOSFET crosstalk | |
| CN111525780B (en) | Circuit, method and device for suppressing drive crosstalk voltage of wide-bandgap power device | |
| CN109980905A (en) | Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe | |
| CN112928902B (en) | SiC MOSFET's drive circuit | |
| CN110830014B (en) | SiC MOSFET drive circuit | |
| CN210536285U (en) | Active clamping circuit internally arranged in drive IC for protecting IGBT | |
| CN111987889A (en) | Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply | |
| CN111987890A (en) | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit | |
| CN117811332A (en) | Miller clamp driving circuit and half-bridge circuit system | |
| US11791815B2 (en) | Driver circuit, corresponding device and method of operation | |
| CN114865890B (en) | High-immunity circuit for GaN power tube half-bridge driving | |
| CN112953174B (en) | Clamping active driving circuit for inhibiting SiC MOSFET crosstalk based on dv/dt detection | |
| CN216086471U (en) | Multilevel driving circuit for restraining crosstalk conduction of half-bridge circuit | |
| CN114024432B (en) | Grid crosstalk suppression circuit of SiC MOSFET power device | |
| CN114400875A (en) | Silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit, switching power supply and electronic equipment | |
| CN111725978B (en) | SiC MOSFET gate driving circuit with negative pressure turn-off and crosstalk suppression functions | |
| CN114977744A (en) | Drive circuit and control method | |
| CN114337201A (en) | Drive circuit for inhibiting SiC MOSFET peak and crosstalk | |
| CN106094576B (en) | Drive control circuit based on IGBT shaping |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |