CN111987890A - Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit - Google Patents
Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit Download PDFInfo
- Publication number
- CN111987890A CN111987890A CN202010754391.1A CN202010754391A CN111987890A CN 111987890 A CN111987890 A CN 111987890A CN 202010754391 A CN202010754391 A CN 202010754391A CN 111987890 A CN111987890 A CN 111987890A
- Authority
- CN
- China
- Prior art keywords
- resistor
- diode
- mos tube
- sic
- sic mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The invention discloses an embedded single-power-supply multi-level SiC MOSFET driving circuit which comprises a driven SiC MOS tube, a driving chip, a resistor Rg, a diode D, a resistor Rc, a capacitor Cz, a diode Dz, an MOS tube M and a resistor Rm. The driving circuit adopts quasi-4 level driving, and avoids the condition of false conduction caused by the turn-on of another SiC MOSFET of a bridge arm by adopting negative pressure at the start of turn-off; by adopting zero voltage after the turn-off is finished, the problem of SiC MOSFET failure caused by negative voltage spike is avoided. In addition, higher switching speeds can be achieved when switching on and off.
Description
Technical Field
The invention belongs to the technical field of electronic driving, and particularly relates to a multi-level SiC MOSFET driving circuit.
Background
SiC MOSFETs can achieve very high switching speeds relative to Si MOSFETs. However, the drive voltage threshold of the SiC MOSFET is low, and the gate-to-gate voltage tolerance is poor. In conventional bridge-arm circuit configurations, the fast switching action of one switching device can cause a very significant voltage spike to cross-talk at the gate voltage of another switching device. The positive voltage spike is likely to cause false turn-on, and the negative voltage spike is likely to cause failure of the SiC MOSFET.
At present, most of common SiC MOSFET driving circuits adopt negative voltage turn-off to suppress false turn-on, however, the negative voltage turn-off increases the probability of device failure caused by negative voltage spike, and it is necessary to suppress crosstalk. However, the driving circuits with the crosstalk suppression function in the prior art are mostly complex and require multiple power supplies, and a simple circuit for suppressing crosstalk is urgently needed to exert potential performance of the SiC MOSFET.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides an embedded single-power-supply multi-level SiC MOSFET driving circuit which adopts quasi 4-level driving. By adopting negative pressure at the beginning of turn-off, the condition of false turn-on caused by turning on of the other SiC MOSFET of the bridge arm is avoided; by adopting zero voltage after the turn-off is finished, the problem of SiC MOSFET failure caused by negative voltage spike is avoided. In addition, higher switching speeds can be achieved when switching on and off.
The technical scheme adopted by the invention for solving the technical problem comprises the following steps:
an embedded single-power-supply-powered multi-level SiC MOSFET driving circuit comprises a driven SiC MOS tube, a driving chip, a resistor Rg, a diode D, a resistor Rc, a capacitor Cz, a diode Dz, an MOS tube M and a resistor Rm;
one end of the resistor Rg is connected with the OUT end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
the positive electrode of the diode D is connected with the OUT end of the driving chip, the negative electrode of the diode D is connected with one end of the resistor Rc, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
one end of the capacitor Cz is connected with the GND end of the driving chip, and the other end of the capacitor Cz is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode Dz is connected with the GND end of the driving chip, and the cathode of the diode Dz is connected with the Source of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the GND of the driving chip, the Drain electrode of the MOS tube M is connected with one end of the resistor Rm, and the other end of the resistor Rm is connected with the Source electrode of the driven SiC MOS tube.
Preferably, the diode Dz is a zener diode.
Preferably, the diode D is a fast recovery diode.
The invention has the beneficial effects that:
1. the invention can enable the drive circuit to realize the output of the quasi-4 level drive signal under the condition of single power supply.
2. According to the invention, the negative pressure is adopted at the switching-on moment of the other switching tube of the bridge arm to avoid misconduction;
3. according to the invention, zero voltage is adopted at the turn-off moment of the other switching tube of the bridge arm to avoid failure;
4. the circuit provided by the invention is simple and easy to implement and has lower cost;
5. according to the invention, the maximum voltage is adopted for driving at the moment of switching on and off of the driven SiC MOS transistor, so that the switching speed can be maximally increased;
6. the circuit provided by the invention can be conveniently embedded into the existing circuit design scheme.
Drawings
Fig. 1 is a circuit diagram of the present invention.
Fig. 2 is a timing diagram of driving signals according to the present invention.
Fig. 3 is a graph showing the effect of suppressing the bridge arm crosstalk according to the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
As shown in fig. 1, the present invention provides an embedded single-power-supply multi-level SiC MOSFET driving circuit, which includes a driven SiC MOS transistor, a driving chip, a resistor Rg, a diode D, a resistor Rc, a capacitor Cz, a diode Dz, a MOS transistor M, and a resistor Rm;
one end of the resistor Rg is connected with the OUT end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
the positive electrode of the diode D is connected with the OUT end of the driving chip, the negative electrode of the diode D is connected with one end of the resistor Rc, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
one end of the capacitor Cz is connected with the GND end of the driving chip, and the other end of the capacitor Cz is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode Dz is connected with the GND end of the driving chip, and the cathode of the diode Dz is connected with the Source of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the GND of the driving chip, the Drain electrode of the MOS tube M is connected with one end of the resistor Rm, and the other end of the resistor Rm is connected with the Source electrode of the driven SiC MOS tube.
Example (b):
fig. 2 is a waveform timing diagram of the driving circuit of the present invention.
At the time t0, the MOS transistor M keeps the on state, and the driving chip turns on the driven SiC MOS transistor through the resistor Rg.
At the time t1, the MOS transistor M is turned off, Cgs discharges, the driving chip OUT end charges the capacitor Cz through the diode D and the resistor Rc, when the voltage at the two ends of the capacitor Cz reaches the regulated voltage value of the voltage-stabilizing diode Dz, the voltage at the two ends of the capacitor Cz is clamped, and meanwhile, the voltage at the two ends of Cgs is also clamped.
At time t2, the driving chip starts to turn off the driven SiC MOS transistor, and the negative voltage is turned off by the voltage of the capacitor Cz.
At time t3, the MOS transistor M is turned on, the capacitor Cz is discharged through the MOS transistor M and the resistor Rm, the gate voltage of the driven SiC MOS transistor rises to 0, and the zero-voltage off state is maintained.
Fig. 3 is a diagram of the bridge arm crosstalk suppression effect of the driving circuit of the present invention, in which one SiC MOSFET in the same bridge arm is turned off, and after passing through a dead zone, the other SiC MOSFET is turned on, so that the forward disturbance caused by the negative voltage driving exists, and the situation of false turn-on is avoided. And negative disturbance caused by the turn-off of the other SiC MOSFET is turned off due to zero voltage, so that the failure of the SiC MOSFET is avoided.
Claims (3)
1. An embedded single-power-supply-powered multi-level SiC MOSFET drive circuit is characterized by comprising a driven SiC MOS tube, a drive chip, a resistor Rg, a diode D, a resistor Rc, a capacitor Cz, a diode Dz, an MOS tube M and a resistor Rm;
one end of the resistor Rg is connected with the OUT end of the driving chip, and the other end of the resistor Rg is connected with a Gate of the driven SiC MOS tube;
the positive electrode of the diode D is connected with the OUT end of the driving chip, the negative electrode of the diode D is connected with one end of the resistor Rc, and the other end of the resistor Rc is connected with the Source electrode of the driven SiC MOS tube;
one end of the capacitor Cz is connected with the GND end of the driving chip, and the other end of the capacitor Cz is connected with the Source electrode of the driven SiC MOS tube;
the anode of the diode Dz is connected with the GND end of the driving chip, and the cathode of the diode Dz is connected with the Source of the driven SiC MOS tube;
the Source electrode of the MOS tube M is connected with the GND of the driving chip, the Drain electrode of the MOS tube M is connected with one end of the resistor Rm, and the other end of the resistor Rm is connected with the Source electrode of the driven SiC MOS tube.
2. The single power supply multi-level SiC MOSFET driver circuit of claim 1 in which the diode Dz is a zener diode.
3. The single power supply multi-level SiC MOSFET driver circuit of claim 1 in which the diode D is a fast recovery diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010754391.1A CN111987890A (en) | 2020-07-30 | 2020-07-30 | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010754391.1A CN111987890A (en) | 2020-07-30 | 2020-07-30 | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111987890A true CN111987890A (en) | 2020-11-24 |
Family
ID=73444799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010754391.1A Pending CN111987890A (en) | 2020-07-30 | 2020-07-30 | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111987890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114884333A (en) * | 2022-07-08 | 2022-08-09 | 深圳芯能半导体技术有限公司 | Drive circuit, intelligent power module and electronic equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
| CN109167511A (en) * | 2018-11-05 | 2019-01-08 | 宁波市北仑临宇电子科技有限公司 | Lossless synchronous absorbing circuit, boosting and step-down switching power supply circuit |
| CN208623641U (en) * | 2018-07-27 | 2019-03-19 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
-
2020
- 2020-07-30 CN CN202010754391.1A patent/CN111987890A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108667444A (en) * | 2018-07-26 | 2018-10-16 | 深圳市蓝德汽车电源技术有限公司 | A kind of silicon carbide MOSFET driving circuit |
| CN109004813A (en) * | 2018-07-27 | 2018-12-14 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting driving voltage spike |
| CN208623641U (en) * | 2018-07-27 | 2019-03-19 | 深圳英飞源技术有限公司 | A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike |
| CN109167511A (en) * | 2018-11-05 | 2019-01-08 | 宁波市北仑临宇电子科技有限公司 | Lossless synchronous absorbing circuit, boosting and step-down switching power supply circuit |
| CN110830014A (en) * | 2019-11-14 | 2020-02-21 | 西北工业大学 | SiC MOSFET drive circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114884333A (en) * | 2022-07-08 | 2022-08-09 | 深圳芯能半导体技术有限公司 | Drive circuit, intelligent power module and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11611339B2 (en) | Power switch drive circuit and device | |
| CN108880206B (en) | Bootstrap power supply type SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit for inhibiting bridge arm crosstalk | |
| CN108683327B (en) | Silicon carbide MOSFET drive circuit | |
| CN111404411B (en) | Three-level active driving circuit for inhibiting crosstalk | |
| US9543928B2 (en) | Gate driving circuit and method for driving semiconductor device | |
| US20160261266A1 (en) | Electronic Circuit | |
| US20110148376A1 (en) | Mosfet with gate pull-down | |
| CN203406774U (en) | Large-power MOSFET negative-voltage drive circuit | |
| US8736345B2 (en) | Systems and methods of level shifting for voltage drivers | |
| CN111525780B (en) | Circuit, method and device for suppressing drive crosstalk voltage of wide-bandgap power device | |
| CN111600461A (en) | Improved SiC MOSFET bridge arm crosstalk suppression driving circuit and method | |
| CN110830014B (en) | SiC MOSFET drive circuit | |
| CN107623512B (en) | Active Miller clamping protection circuit | |
| US9669427B2 (en) | Methods and systems for ultrasound control with bi-directional transistor | |
| JP4909684B2 (en) | Semiconductor device | |
| CN112928902A (en) | SiC MOSFET's drive circuit | |
| CN210536285U (en) | Active clamping circuit internally arranged in drive IC for protecting IGBT | |
| CN111987890A (en) | Embedded single-power-supply-powered multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit | |
| CN203933357U (en) | A kind of metal-oxide-semiconductor drive circuit for fast detecting equipment | |
| CN111987889A (en) | Multi-level SiC MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit powered by single power supply | |
| JP2008029155A (en) | Drive circuit of voltage-drive element | |
| CN114865890B (en) | High-immunity circuit for GaN power tube half-bridge driving | |
| CN112953174B (en) | Clamping active driving circuit for inhibiting SiC MOSFET crosstalk based on dv/dt detection | |
| US11218136B2 (en) | Power transistor driving method, driving circuit and switching circuit | |
| CN115051696A (en) | Segmented gate driving circuit applied to SiC MOSFET |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |