CN110212740A - A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation - Google Patents
A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation Download PDFInfo
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- CN110212740A CN110212740A CN201910404032.0A CN201910404032A CN110212740A CN 110212740 A CN110212740 A CN 110212740A CN 201910404032 A CN201910404032 A CN 201910404032A CN 110212740 A CN110212740 A CN 110212740A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The present invention provides a kind of driving circuits for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, belong to electronic power switch component driving circuit technical field.Its technical solution are as follows: a kind of driving circuit for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, including push-pull circuit and capacitor auxiliary circuit, push-pull circuit connect with capacitor auxiliary circuit and constitute complete operating circuit on the main circuit；The main circuit is made of the two SiC switch mosfet pipes up and down being connected on same bridge arm.The invention has the benefit that the present invention can be not slowing down under the premise of turning on and off speed of two SiC switch mosfet pipes, it effectively reduces by the crosstalk voltage that two SiC switch mosfet pipes mutually generate above and below same bridge arm, and effectively reduces concussion of the two SiC switch mosfet pipes driving output voltage in switching process.
Description
Technical field
The present invention relates to electronic power switch component driving circuit technical field more particularly to a kind of inhibition SiC MOSFET
The driving circuit of gate pole crosstalk and oscillation.
Background technique
SiC MOSFET has the advantages such as switching speed is fast, conducting resistance is low, high temperature resistant, thermal diffusivity are good, is applicable in high power
Density, high switching frequency, high efficiency and bad environments occasion.However, being substantially improved for switching speed can make to generate between drain-source
Very big dv/dt is easy the driving to other switching devices of bridge arm and generates crosstalk, while making device drive itself to shake
It swings.Open that threshold value is lower and grid peak suction is smaller due to SiC MOSFET, may cause when crosstalk is serious open by mistake it is logical or
The breakdown of person's grid source electrode negative pressure may result in grid source positive pressure in opening process and puncture when driving oscillation is serious, the SiC seriously restricted
The application of MOSFET.
In order to inhibit the influence of crosstalk and driving oscillation, commonly used approach are as follows: increase driving resistance or increasing
Add the shunt capacitance capacitance between grid source.This scheme can preferably inhibit cross talk effects, but will lead to the drop of switching speed
It is low, it necessarily will increase switching loss in hard switching, while can also reduce the operating switch frequency of switching device, thus not
The advantage of silicon carbide device can be played completely.Therefore, a variety of driving reforming design schemes are proposed both at home and abroad, are broadly divided into two
Class.A kind of scheme realizes the variation of four grades of driving voltage using two push-pull circuits using variable gate drive voltage.
Variable gate drive voltage can be according to the polarity for switching crosstalk under each state, preset corresponding voltage class, to press down
Crosstalk processed.Variable gate drive voltage circuit structure is complicated, it is desirable to provide additional isolation control signal, and do not inhibit
The ability of driving oscillation in switching process, while needing to make anticipation to crosstalk polarity, especially for three-phase circuit difference
The more difficult anticipation of working condition crosstalk polarity；In addition a kind of scheme is the gate drive voltage that can be changed the scheme of gate-source capacitance and can be changed,
Make SiC MOSFET when may be by cross talk effects by using active device, it is biggish in one capacitance of its grid sources connected in parallel
Capacitor, to achieve the purpose that inhibit crosstalk.Variable gate drive voltage only may act on SiC MOSFET shutdown and complete
Stage to before open next time afterwards does not have rejection ability to the driving oscillation during switch.
Summary of the invention
The purpose of the present invention is to provide a kind of driving circuits for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, pass through two
Group triode keeps the capacitor of grid source parallel connection and driving resistance controllable, turns on and off speed not slowing down SiC MOSFET, and
Driving oscillation and string in the case where not needing extra control signals, during inhibiting SiC switch mosfet pipe to turn on and off
It disturbs.
The present invention is realized by following measure: a kind of to inhibit the driving of the crosstalk of SiC MOSFET gate pole and oscillation electricity
Road, wherein including push-pull circuit, capacitor auxiliary circuit, the push-pull circuit connects structure on the main circuit with capacitor auxiliary circuit
At complete operating circuit, the main circuit is made of the two SiC switch mosfet pipes up and down being connected on same bridge arm；
Two opto-coupler chip input terminals, two opto-coupler chips are connected in two control signal outputs of controller
Output end be separately connected the control signal input of two push-pull circuit and the two capacitors auxiliary circuit, described two recommend
Two output ends of circuit are connect with the grid of two SiC switch mosfet pipes on the same bridge arm of the main circuit respectively, institute
The input terminal for stating two push-pull circuits connects+20V and-the 5V output pin of two isolated power supply chips respectively；
The two opto-coupler chip signal output ends are connected to the base stage of two groups of triodes in the capacitor auxiliary circuit,
The collector of two groups of triodes passes through the same bridge of two groups of auxiliary capacitors Yu the main circuit respectively in the capacitor auxiliary circuit
The source electrode of two SiC switch mosfet pipes is connected on arm；
The emitter of triode described in two groups is connected respectively to two SiC MOSFET of the same bridge arm of the main circuit or more
The grid of switching tube, two groups of diodes of inverse parallel respectively between the emitter and collector of triode described in two groups are described same
The source electrode of two SiC MOSFET connects the 0V output pin of two isolated power supply chips respectively above and below bridge arm.
As the further side of optimization of the driving circuit of a kind of inhibition SiC MOSFET gate pole crosstalk of the invention and oscillation
Case, two groups of triodes are two PNP triodes and two NPN triodes, the capacitor auxiliary electricity in the capacitor auxiliary circuit
Route two groups of triodes and four auxiliary capacitor compositions；The control signal of the controller output passes through the two optocoupler cores respectively
Piece is input to the base stage of two NPN triodes and two PNP triodes of the capacitor auxiliary circuit；Two PNP
Triode and the collector of two NPN triodes pass through four auxiliary capacitors respectively and are connected to two SiC MOSFET
The source electrode of switching tube, the emitter of triode described in two groups are connected to the grid of the two SiC MOSFET.
As the further side of optimization of the driving circuit of a kind of inhibition SiC MOSFET gate pole crosstalk of the invention and oscillation
Case, the push-pull circuit is by two two power supply chips with+20V, 0V and three pins of -5V, two NOT gates and two groups
MOSFET element composition, every group of MOSFET element quantity are two；The control signal of the two opto-coupler chip output ends leads to respectively
Cross two NOT gates be transferred to two groups described in MOSFET element grid；+ 20V and -5V two of two power supply chips draw
Foot be connected to two groups described in MOSFET element source electrode, two output end of push-pull circuit pass through respectively driving resistance connection
In the main circuit on the grid of two SiC switch mosfet pipes, the source electrode of two SiC switch mosfet pipes
It is connected on the 0V pin of two power supply chips.
As the further side of optimization of the driving circuit of a kind of inhibition SiC MOSFET gate pole crosstalk of the invention and oscillation
Case, the control signal of the controller pass sequentially through the two opto-coupler chip input terminals, it is described push away exempt from circuit g1, g2 input
It holds, on the grid of two be transmitted on the same bridge arm of the main circuit the SiC switch mosfet pipe.
As the further side of optimization of the driving circuit of a kind of inhibition SiC MOSFET gate pole crosstalk of the invention and oscillation
Case, the control signal of two opto-coupler chips outputs pass through two NOT gates be transmitted to two groups described in MOSFET element grid
On, the two pins of SiC MOSFET element turning-on voltage described in two groups be 20V and 0V, shutdown voltage two pins be 0V and-
5V。
As the further side of optimization of the driving circuit of a kind of inhibition SiC MOSFET gate pole crosstalk of the invention and oscillation
The circuit debugging voltage of case, auxiliary capacitor described in the two of them with two SiC switch mosfet pipe grid sources connected in parallel is
+ 20V, the circuit shutdown voltage with auxiliary capacitor described in other two is -5V.
The invention has the benefit that the present invention can accelerate reduction while two SiC switch mosfet pipes open speed
Bridge arm crosstalk and gate source voltage vibrate；SiC switch mosfet pipe gate-drive be when upper SiC switch mosfet pipe is opened,
Upper SiC switch mosfet pipe drain voltage has the obvious higher-order of oscillation during curent change, the frequency of oscillation and sheet
SiC switch mosfet pipe gate source voltage oscillation frequency above and below in the upper SiC switch mosfet pipe drain current and Figure 17 (a) of invention
Rate is consistent, and drain-source voltage variation is greater than conventional drive scheme, opens speed and becomes faster, since parasitic parameter influences, SiC in the present invention
The higher-order of oscillation has occurred when increasing in switch mosfet pipe drain current, since current variation speeds are faster than conventional ADS driving, vibrates width
Value is bigger than the oscillation of conventional drive scheme drain current, but still in safe range, due to anti-paralleled diode Reverse recovery electricity
Stream and effect of parasitic capacitance, result in the overshoot of 7A or so, and overshoot amplitude is less than conventional drive scheme；Two SiC of the invention
Switch mosfet pipe drain current pace of change is significantly greater than conventional drive scheme, opens speed and becomes faster, and turn-on consumption can be by
Drain voltage and drain current product integral obtain in opening process, are promoted and current overshoot drop using speed of opening of the invention
Low, turn-on consumption is greatly reduced, and therefore, the present invention can turn on and off speed do not slow down two SiC switch mosfet pipes
Under the premise of, it effectively reduces by the crosstalk voltage that two SiC switch mosfet pipes mutually generate above and below same bridge arm, and have
Effect reduces concussion of the two SiC switch mosfet pipes driving output voltage in switching process.
Detailed description of the invention
Fig. 1 is the entire circuit diagram of the embodiment of the present invention.
Fig. 2 is that two SiC switch mosfet pipes open the original state of preceding entire circuit in main circuit in the embodiment of the present invention
Schematic diagram.
Fig. 3 is that entire circuit works first and second in two SiC switch mosfet pipe opening processes in the embodiment of the present invention
Stage circuit working drawing.
Fig. 4 is entire circuit work phase III in two SiC switch mosfet pipe opening processes in the embodiment of the present invention
Circuit working drawing.
Fig. 5 is entire circuit work fourth stage in two SiC switch mosfet pipe opening processes in the embodiment of the present invention
Circuit operation schematic diagram.
Fig. 6 is that entire circuit works first and second in two SiC switch mosfet pipe opening processes in the embodiment of the present invention
Stage circuit operation schematic diagram.
Fig. 7 is that two SiC switch mosfet pipes open the first of preceding entire circuit on bridge arm on main circuit in the embodiment of the present invention
Beginning status diagram
Fig. 8 is entire circuit the 5th stage circuit in two SiC switch mosfet pipe turn off process in the embodiment of the present invention
Operation schematic diagram.
Fig. 9 is entire circuit the 6th stage circuit in two SiC switch mosfet pipe turn off process in the embodiment of the present invention
Operation schematic diagram.
Figure 10 is entire circuit the 7th stage electricity in two SiC switch mosfet pipe turn off process in the embodiment of the present invention
Road operation schematic diagram.
Figure 11 is entire circuit the 8th stage electricity in two SiC switch mosfet pipe turn off process in the embodiment of the present invention
Road operation schematic diagram.
Figure 12 is the illustraton of model that the present invention establishes.
Figure 13 is the parasitic inductance ignored in Figure 12 in the embodiment of the present invention, carries out the simplification circuit mould that depression of order is handled
Type figure.
Figure 14 is that the SiC switch mosfet pipe of lower bridge arm when bridge arm of the embodiment of the present invention connects inductive load remains
The SiC switch mosfet pipe of off state, upper bridge arm opens turn off process schematic diagram stage by stage.
Figure 15 is that the state change of upper bridge arm SiC switch mosfet pipe in the embodiment of the present invention causes lower bridge arm SiC
Switch mosfet pipe grid source crosstalk voltage and lower bridge arm SiC MOSFET grid source parallel connection total capacitance and the 3D relationship of driving resistance are shown
It is intended to.
Figure 16 is that the state change of upper bridge arm SiC switch mosfet pipe in the embodiment of the present invention causes lower bridge arm SiC
The relation schematic diagram of switch mosfet pipe grid source crosstalk voltage and lower bridge arm SiC MOSFET grid source parallel connection total capacitance.
Figure 17 is conventional driving circuit and driving circuit proposed by the present invention two SiC MOSFET under continuous duty
Gate source voltage when switching tube is turned off and opened, the comparison diagram of drain-source voltage electric current.
Specific embodiment
In order to clarify the technical characteristics of the invention, being illustrated below by specific embodiment to this programme.
Referring to Fig. 1 to Figure 17, the present invention is: a kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation,
In, including push-pull circuit, capacitor auxiliary circuit, the push-pull circuit is connected with capacitor auxiliary circuit to be constituted completely on the main circuit
Operating circuit, the main circuit is made of the two SiC switch mosfet pipes up and down being connected on same bridge arm；
Two opto-coupler chip input terminals, two opto-coupler chips are connected in two control signal outputs of controller
Output end be separately connected the control signal input of two push-pull circuit and the two capacitors auxiliary circuit, described two recommend
Two output ends of circuit are connect with the grid of two SiC switch mosfet pipes on the same bridge arm of the main circuit respectively, institute
The input terminal for stating two push-pull circuits connects+20V and-the 5V output pin of two isolated power supply chips respectively；
The two opto-coupler chip signal output ends are connected to the base stage of two groups of triodes in the capacitor auxiliary circuit,
The collector of two groups of triodes passes through the same bridge of two groups of auxiliary capacitors Yu the main circuit respectively in the capacitor auxiliary circuit
The source electrode of two SiC switch mosfet pipes is connected on arm；
The emitter of triode described in two groups is connected respectively to two SiC MOSFET of the same bridge arm of the main circuit or more
The grid of switching tube, two groups of diodes of inverse parallel respectively between the emitter and collector of triode described in two groups are described same
The source electrode of two SiC MOSFET connects the 0V output pin of two isolated power supply chips respectively above and below bridge arm.
Wherein, two groups of triodes are two PNP triodes and two NPN triodes in the capacitor auxiliary circuit, described
Capacitor auxiliary circuit is made of two groups of triodes and four auxiliary capacitors；The control signal of the controller output passes through two respectively
The opto-coupler chip is input to the base stage of two NPN triodes and two PNP triodes of the capacitor auxiliary circuit；Two
The collector of a PNP triode and two NPN triodes passes through four auxiliary capacitors respectively and is connected to described in two
The source electrode of SiC switch mosfet pipe, the emitter of triode described in two groups are connected to the grid of the two SiC MOSFET.
Wherein, the push-pull circuit is by two two power supply chips with+20V, 0V and three pins of -5V, two NOT gates
It is formed with two groups of MOSFET elements, every group of MOSFET element quantity is two；The control signal of the two opto-coupler chip output ends
Respectively by two NOT gates be transferred to two groups described in MOSFET element grid；+ the 20V and -5V of two power supply chips
Two pins be connected to two groups described in MOSFET element source electrode, two output end of push-pull circuit pass through respectively driving electricity
Resistance is connected in the main circuit on the grid of two SiC switch mosfet pipes, two SiC switch mosfet pipes
Source electrode be connected on the 0V pin of two power supply chips.
Wherein, the control signal of the controller passes sequentially through the two opto-coupler chip input terminals, described push away exempts from circuit
G1, g2 input terminal, on the grid of two be transmitted on the same bridge arm of the main circuit the SiC switch mosfet pipe.
Wherein, the control signal of two opto-coupler chips outputs by two NOT gates be transmitted to two groups described in MOSFET device
On the grid of part, the two pins of SiC MOSFET element turning-on voltage described in two groups are 20V and 0V, turn off the two pins of voltage
For 0V and -5V.
Wherein, with the circuit of auxiliary capacitor described in the two of them of two SiC switch mosfet pipe grid sources connected in parallel
Turning-on voltage is+20V, and the circuit shutdown voltage with auxiliary capacitor described in other two is -5V.
Process is turned on and off to two SiC switch mosfet pipe concatenated on the same bridge arm of main circuit of the present invention
It is as follows to carry out sublevel piecewise analysis particular content:
Wherein, two SiC switch mosfet pipes are mainly by upper SiC switch mosfet pipe and lower SiC switch mosfet pipe
It constitutes, two SiC switch mosfet pipes turn on and off whole process, it is believed that lower SiC switch mosfet pipe (M1H) shape
State is in off state, and descends between SiC switch mosfet pipe grid source shunt capacitance C always in this casepL, driving resistance is Rg, suppression
Crosstalk processed is similar with traditional passive inhibition crosstalk mode；But due to CpLValue can obtain it is bigger, so inhibiting crosstalk energy
Power is more preferable, to two SiC switch mosfet pipes when turning on and off process analysis procedure analysis, referring to Figure 14, weight analysis active Guan Zhen
It swings:
The four-stage tool that concatenated two SiC switch mosfet pipe is opened on same bridge arm in main circuit of the present invention
Body are as follows:
Open the initial stage (as t0Before), referring to fig. 2, upper SiC switch mosfet pipe is held off stable state,
M1H、Q1HFor off state, M2H、Q2HFor opening state, upper SiC switch mosfet pipe gate source voltage vgsHWith driving low level V2H
It is identical, it is -5V, upper SiC switch mosfet pipe completely closes, and inductive current is continued by the diode of lower SiC switch mosfet pipe
It flows, C under current statenH、CnLBoth end voltage is -5V, CpH、CpLBoth end voltage is 20V.
First and second stage (t0-t2), referring to such as Fig. 3, upper SiC switch mosfet pipe M1Gate-drive pair side input signal
g1Become high level, M1HIt is open-minded, M2HShutdown, simultaneously as auxiliary tube Q2HCommon drive controls signal g1, auxiliary tube Q1HIt is open-minded,
Q2HShutdown, auxiliary capacitor CnHDisconnection is connect with gate-drive, and both end voltage remains -5V, auxiliary capacitor CpHIt is parallel to upper tube
Grid source two sides, driving power V1HWith auxiliary capacitor CpHEnergy is stored to upper SiC switch mosfet pipe gate-source capacitance CgsHCharging,
Upper SiC switch mosfet pipe gate source voltage vgsHRise, vgsHVoltage rises to open threshold voltage 0V-2V after, upper SiC
Switch mosfet pipe is open-minded, flows through SiC switch mosfet pipe M1Electric current idHIt is linear to increase, until maximum load current is arrived greatly,
This stage still has electric current by lower SiC switch mosfet pipe diode continuousing flow, and lower SiC switch mosfet tube voltage is 0V, by
In the drain electrode of lower SiC switch mosfet pipe, there are parasitic inductance L with source electrodedHWith LsH, there are parasitic inductances for commutation circuit PCB circuit
Lpara, it is (L that upper SiC switch mosfet pipe drain-source voltage, which can generate an amplitude,d+Ls+Lpara)didHThe voltage change of/dt.
Phase III (t2-t3), referring to fig. 4, SiC switch mosfet pipe M under main circuit2Start to bear back-pressure, upper SiC
Switch mosfet pipe M1Drain-source voltage vdsHIt begins to decline, lower SiC switch mosfet pipe drain-source voltage vdsLIt begins to ramp up, this mistake
Journey thinks Muller capacitor CgdLBoth end voltage vgdLLinear rise then flows through the electric current of lower SiC switch mosfet pipe pipe Muller capacitor
igdLAmplitude is CgdLdvgdL/ dt, to there is electric current to flow continuously through V2L、CnLWith CgsL, due to lower SiC switch mosfet pipe pipe grid
Source auxiliary capacitor CnLBe incorporated to, igdLPass through CnLIt shunts, it is suppressed that lower SiC switch mosfet pipe pipe gate source voltage is due to bridge arm
Forward voltage spike caused by crosstalk；Similarly, having size is CgdHdvgdHThe electric current i of/dtgdHSiC MOSFET is flowed continuously through to open
Pipe Muller capacitor is closed, the electric current is by driving power V1HWith auxiliary capacitor CpHIt provides, upper SiC switch mosfet pipe grid source forms
Muller platform, the stage is until upper SiC switch mosfet pipe drain-source voltage vdsHBeing reduced to 0V terminates.
Fourth stage (t3-t4), referring to such as Fig. 5, upper SiC switch mosfet pipe gate source voltage vgsHContinue to rise, upper SiC
Switch mosfet pipe auxiliary capacitor CpHTwo sides voltage continues lower SiC switch mosfet pipe drop, as capacitor CpHTwo sides voltage is equal to
Gate-source capacitance CgsHWhen the voltage of two sides, driving power V1HGive capacitor CpHWith CgsHIt powers simultaneously, upper SiC switch mosfet pipe grid source
Voltage vgsHIt is raised slowly to given driving high level 20V, opening process terminates；Due on last stage, upper SiC switch mosfet
SiC switch mosfet pipe drops to 0V under pipe drain-source voltage, and lower SiC switch mosfet pipe pipe drain-source voltage reaches busbar voltage
Afterwards, by parasitic inductance and effect of parasitic capacitance, upper and lower SiC switch mosfet pipe pipe drain-source voltage vibrates, respectively can be to upper
Lower SiC switch mosfet pipe pipe gate source voltage generates interference, the early period in stage capacitor GpHIn discharge condition, through RgHinTo grid
Source capacitor CgsHCharging, it is believed that driving resistance is RgHin, gate-source capacitance CgsH, later period CpHWith CgsHJointly by driving power V1HIt fills
Electricity, it is believed that driving resistance is RgH+RgHin, gate-source capacitance CpH+CgsH, upper SiC switch mosfet pipe gate source voltage change rate drop
It is low, it is believed that CpHSiC switch mosfet pipe grid source two sides are directly parallel in, due to auxiliary capacitor CnL, CpHBe incorporated to, make
Drain-source voltage weakens the disturbance of gate source voltage.
The four-stage tool of concatenated two SiC switch mosfet pipe shutdown on same bridge arm in main circuit of the present invention
Body are as follows:
Turn off original state (t4-t5), referring to Fig. 6, upper SiC switch mosfet pipe M1Into stablizing on state, M1H、
Q1HFor opening state, M2H、Q2HFor off state, upper SiC switch mosfet pipe gate source voltage vgsHEqual to driving high level V1HI.e.
20V, upper SiC switch mosfet pipe is completely open-minded, SiC switch mosfet pipe C under current statenH、CnLVoltage is -5V, CpH、
CpLVoltage is 20V.
5th stage (t5-t6), referring to Fig. 7, upper SiC switch mosfet pipe M1Gate electrode drive signals g1Become low level,
M2HIt is open-minded, M1HShutdown, since auxiliary tube shares signal g1, auxiliary tube Q2HIt is open-minded, Q1HShutdown, CpHWith upper SiC switch mosfet
The connection of pipe gate-drive disconnects, and both end voltage remains 20V, CnHIt is parallel to SiC switch mosfet pipe grid source two sides, CgsH
Pass through RgHinTo driving power V2HWith auxiliary capacitor CnHElectric discharge, auxiliary capacitor CnHBoth end voltage rises, upper SiC switch mosfet
Pipe gate source voltage vgsHLower SiC switch mosfet pipe drop, the process main circuit operating status are constant.
6th stage (t6-t7), referring to Fig. 8, upper SiC switch mosfet pipe M1Drain-source voltage vdsHIt begins to ramp up, lower SiC
Switch mosfet pipe pipe M2Drain-source voltage vdsLStart lower SiC switch mosfet pipe drop, thus lower SiC switch mosfet pipe pipe
Drain-to-gate voltage vgdLAlso it descends SiC switch mosfet pipe to drop, then flows through the electric current i of lower SiC switch mosfet pipe pipe Muller capacitorgdL
For CgdLdvgdL/ dt, this stage have electric current persistently to flow out V2L、CnLWith CgsL, due to auxiliary capacitor CnLBe incorporated to, Muller electric current
Pass through CnLIt shunts, it is suppressed that lower SiC switch mosfet pipe pipe gate source voltage negative voltage spike due to caused by bridge arm crosstalk；
Similarly, having size is CgdHdvgdHThe electric current i of/dtgdHSiC switch mosfet pipe Muller capacitor is flowed continuously through, the electric current is by driving
Dynamic power supply V2HWith CnHIt provides, Muller platform is formd in upper SiC switch mosfet pipe grid source, until vdsHReach busbar voltage,
This process terminates.
7th stage (t7-t8), referring to Fig. 9, CgsHPass through RgHinTo driving power V2HWith auxiliary capacitor CnHElectric discharge, auxiliary
Capacitor CnHBoth end voltage rises, upper SiC switch mosfet pipe gate source voltage vgsHContinue lower SiC switch mosfet pipe drop, at this time
Think that driving resistance is RgHin, gate-source capacitance CgsH, as auxiliary capacitor CnHVoltage be equal to CgsHVoltage when, CnHWith CgsHElectricity
Pressure is dropped with SiC switch mosfet pipe at present, thinks that driving resistance is R at this timegH+RgHin, gate-source capacitance CnH+CgsH, to make
CgsHSiC switch mosfet pipe reduction of speed degree slows down under both end voltage, until gate source voltage is equal to driving low level V2H, this stage
Lower SiC switch mosfet pipe pipe M2Diode begin to turn on, M1With M2Start the change of current, upper SiC switch mosfet pipe drain electrode electricity
Flow idHIt reduces, until upper SiC switch mosfet tube current is zero, load current is entirely by lower two pole of SiC switch mosfet pipe pipe
Pipe afterflow, at this stage, since upper SiC switch mosfet pipe drain-source voltage rises to busbar voltage, lower SiC on last stage
After SiC switch mosfet pipe drops to 0V under switch mosfet pipe pipe drain-source voltage, by commutation circuit parasitic inductance and parasitic capacitance
It influences, upper and lower SiC switch mosfet pipe pipe drain-source voltage vibrates, respectively can be to upper and lower SiC switch mosfet pipe pipe grid
Source voltage generate interference, the early period in stage capacitor CnHTo CgsHElectric discharge, the later period is by driving power V2HElectric discharge, makes CgsHTwo sides voltage
Change rate is equivalent to C by slowing down fastlynHSiC switch mosfet pipe grid source both ends are parallel to, due to auxiliary capacitor CnH、CnL's
It is incorporated to, weakens drain-source voltage to the disturbance of gate source voltage, disturbance, which weakens reason, to be analyzed in detail below.
8th stage (t8Later), referring to Fig. 9, upper SiC switch mosfet pipe gate source voltage vgsHContinue lower SiC
Switch mosfet pipe drop, until vgsHReach -5V, auxiliary capacitor CnHBoth end voltage also reaches stationary value -5V, and turn off process terminates,
Completion entirely opens turn off process, SiC switch mosfet pipe C under current statenH、CnLVoltage is -5V, CpH、CpLVoltage is
20V。
Concatenated two SiC switch mosfet pipe shutdown opens and closes on same bridge arm in main circuit of the invention
Disconnected end cycle, upper SiC switch mosfet pipe complete switch off, and complete entirely to open turn off process.
Two SiC switch mosfet pipe gate-drive parameter designing on same bridge arm in main circuit of the invention:
For two SiC switch mosfet pipe gate-drive model proposed by the present invention, upper SiC switch mosfet pipe grid source
Both ends it is in parallel always auxiliary capacitor CpH or CnH, lower SiC switch mosfet pipe pipe grid source both ends it is in parallel always auxiliary
Capacitor CpL or CnL establish model referring to figure to analyze the selection of passive device parameter in driving circuit proposed by the invention
10:
According to Figure 11 institute representation model, obtained by Kirchhoff's theorem:
In formula:
Abbreviation formula 3.3 obtains the equivalent circuit differential equation:
In formula:
A4=LgLsCgs1(Cgs+Cgd)
A3=Cgs1(Cgs+Cgd)(LgRg+LsRgin)
A2=LgCgs+LgCgd+LsCgs-LsCgs1+RgCgs1Rgin(Cgs+Cgd)
A1=RgCgs1+(Rg+Rgin)(Cgs+Cgd)
By formula (2) it is found that the equivalent circuit mathematical model is Fourth Order Differential Equations, directly analysis is excessively complicated, in order to obtain
The reasonable value for taking passive device needs to simplify above-mentioned model, to carry out parameter calculating, therefore, ignores parasitic electricity
Sense influences, and carries out depression of order processing, simplified circuit model such as Figure 11:
Parametric equation is obtained by circuit model:
In formula:
Abbreviation formula 3 obtains the circuit equivalent differential equation:
In formula:
B2=RgCgs1Rgin(Cgs+Cgd)
B1=RgCgs1+(Rg+Rgin)(Cgs+Cgd)
Table 1 is SiC MOSFET calculation of crosstalk parasitic parameter:
By the SiC MOSFET calculation of crosstalk parasitic parameter in table 1 it is found that enabling busbar voltage is 600V, drain-source voltage rises
When the lower SiC switch mosfet pipe drop time will be 30ns, dvds/dt value is 20V/ns；1 parameter of table is substituted into above-mentioned formula (4),
The voltage change Δ vgs and driving resistance Rg generated at the end of available drain-source voltage variation by bridge arm cross talk effects grid source,
The 3D graph of relation of gate-source capacitance Cgs1；As shown in figure 15, it is known that in the identical situation of drain-source voltage change rate
SiC switch mosfet pipe, grid source voltage change amplitude as caused by bridge arm crosstalk increase with the increase of driving resistance, with
The increase of grid source auxiliary capacitor and reduce, by 3D curve, it can be seen that driving resistance is when taking 10 Ω, as grid source assists electricity
Hold variation, bridge arm crosstalk obtains stronger inhibition, can work in safe range, observe for convenience, draws driving resistance and is
When 10 Ω, grid subject string disturbs voltage Δ vgs and auxiliary capacitor relationship two-dimensional curve.
By Rg=10 Ω are substituted into formula (4), gate source voltage changes delta v caused by available bridge arm crosstalkgsSimultaneously with grid source
Join capacitor Cgs1Relation curve, such as Figure 16；It can be concluded that, grid source shunt capacitance C is taken by curve graphgs1When reaching 10nF, bridge arm
It is 2V that gate source voltage caused by crosstalk, which disturbs amplitude, and SiC MOSFET can be safely operated；So auxiliary capacitor CpH、CnH、CpL、
CnLIt can be with value 10nF or more.
Auxiliary capacitor CpH、CnH、CpL、CnLValue will not only consider the inhibition to crosstalk, it is also necessary to consider switching speed and open
Close loss.
To simplify the explanation, for the above SiC switch mosfet pipe is opened, whether analysis auxiliary capacitor value is suitable；For
Reduction turn-on consumption adds auxiliary capacitor CpHAfterwards, CpHBoth end voltage and gate-source parasitic capacitance CgsHThe identical generation of voltage is being opened
Logical fourth stage, so that drain current and the variation of drain-source voltage changes phase gate source voltage are rapidly, speed is opened in guarantee, is occurred
Oscillation phase, auxiliary capacitor CpHVoltage rises simultaneously with gate source voltage, and gate source voltage variation is slow, suppressor source voltage oscillation；
Binding experiment comes into it is found that when gate source voltage reaches 12V and opens fourth stage；After adding auxiliary capacitor, auxiliary electricity
Hold CpHBoth end voltage and gate-source parasitic capacitance CgsHWhen voltage is identical, gate source voltage is approximately equal to 12V, it is ensured that opens speed
Suppressor source voltage oscillation simultaneously；Assuming that gate-source parasitic capacitance C in opening processgsCharge is completely by CpHCharge provides, grid source electricity
When pressure rises to 12V from -5V, ignores the influence of Muller electric current, need 50nC charge；Think that driving power is injected to simplify operation
Charge is cancelled out each other with the influence of Muller electric current, works as CpHBoth end voltage is identical as grid source stray voltage and is equal to 12V, is kept by charge
It is permanent:
CpH(20V-12V)=50nC (5)
It can be found out by formula (5), as auxiliary capacitor CpHWhen capacitance is 6.2nF, auxiliary capacitor C may be implementedpHBoth end voltage
With gate-source parasitic capacitance CgsHWhen voltage is identical, gate source voltage is approximately equal to 12V；By above-mentioned analysis it is found that can make between grid source
Total capacitance be that 10nF reaches better inhibitory effect；Figure 16 is participated in, C is usedpHWith CoutIt is in parallel in parallel electric as equivalent grid source
Hold Cgs1, in order to simplify operation, driving power is injected charge and is offseted with the influence of Muller electric current, CgsHWith CoutCharge is by auxiliary
Capacitor CpHIt provides, works as CpHBoth end voltage and gate-source parasitic capacitance CgsHVoltage is identical and is equal to 12V, by charge conservation:
It is obtained by formula (6), CpHFor 8.8nF, CoutFor 1.2nF；Similarly, auxiliary capacitor C is addednHAfterwards, CnHBoth end voltage and grid
Source parasitic capacitance CgsHVoltage is identical to be occurred to make drain-source voltage and drain current changes phase grid source electricity in the 7th stage of shutdown
Bucklingization is rapid, guarantees turn-off speed, and oscillation phase, auxiliary capacitor C occursnHVoltage lower SiC MOSFET synchronous with gate source voltage
Switching tube drop, gate source voltage variation is slow, suppressor source voltage oscillation；Binding experiment is it is found that when gate source voltage reaches 2V,
Through entering for the 7th stage；So after addition auxiliary capacitor, auxiliary capacitor CnHBoth end voltage and gate-source parasitic capacitance CgsHVoltage phase
Meanwhile gate source voltage is approximately equal to 2V, guarantees turn-off speed suppressor source voltage oscillation simultaneously；Assuming that grid source is parasitic in turn off process
Capacitor CgsHWith grid source shunt capacitance CoutCharge completely by CnHCharge provides, and when gate source voltage is reduced to 2V from 20V, ignores more
Strangling electric current influences, and needs 70nC charge；Driving power is injected charge and is offseted with the influence of Muller electric current, and C is worked asnHBoth end voltage and grid
When source stray voltage is identical, by charge conservation:
CnH(- 5V-2V)=70nC+ (20-2) Cout (7)
The validity that the present invention is invented by lower SiC switch mosfet pipe face simulating, verifying, emulation use LTspice
Software emulation, the C2M0040120D model for using device model to provide for CREE company, source electrode endophyte inductance LsIt is taken as
Simulation parameters given value 10n, grid endophyte inductance LgFor 15n, the setting of remaining simulation parameter is as shown in table 2.
Table 2 is emulation parasitic parameter and operating condition
In Figure 17 (a), vgsLWaveform and vdsHCurve is respectively conventional gate drive scheme SiC switch mosfet pipe up and down
Pipe gate source voltage waveform, vgshCurve and vgsLSiC switch mosfet pipe gate source voltage wave above and below in the curve respectively present invention
Shape；When SiC switch mosfet pipe is opened on conventional gate drive scheme, upper SiC switch mosfet pipe gate source voltage is leaked
Source voltage variations affect produces Muller platform, slower due to opening speed, and upper SiC switch mosfet pipe grid source does not generate
Oscillation；During opening in upper SiC switch mosfet pipe, lower SiC switch mosfet pipe pipe gate source voltage by cross talk effects, and
It vibrates, gate source voltage spike maximum amplitude reaches 3V, lowest amplitude -2.5V, in operational envelope.
When SiC switch mosfet pipe is opened on driving gate drive scheme of the invention, upper SiC switch mosfet pipe grid
Quickly, rate of voltage rise is slow between 12V to 20V for the rate of climb when source voltage is from 0V to 12V, but at Muller platform,
Rapidly influenced since drain-source voltage changes, produce the higher-order of oscillation, higher-order of oscillation amplitude in safe range, due to being gone here and there
Influence is disturbed, SiC switch mosfet pipe pipe gate source voltage equally vibrates under drive scheme of the invention, can from Figure 17 (a)
To find out, by cross talk effects, lower SiC switch mosfet pipe pipe gate source voltage maximum positive polarity peak amplitude is 2.8V, grid source electricity
It is only 0.8V that pressure, which vibrates maximum negative polarity spike,；By comparison present invention driving with conventional drive scheme it can be found that using this
Invention drive scheme can accelerate to reduce bridge arm crosstalk while two SiC switch mosfet pipes open speed and gate source voltage shakes
It swings.
Figure 17 (b) is continuous operation upper SiC switch mosfet pipe drain-source voltage corresponding with 17 (a) switching processes and leakage
Electrode current；In Figure 17 (b), vgsLCurve and vdsHCurve is respectively SiC MOSFET on traditional Si C MOSFET gate drive scheme
Switching tube drain-source voltage and drain current wavefonn, curve recommend vdsHWith recommendation iDCurve is respectively SiC on drive scheme of the present invention
Switch mosfet pipe drain-source voltage and drain current wavefonn；When conventional drive scheme is opened, upper SiC switch mosfet pipe drain-source
During curent change, slight oscillation occurs voltage for drain-source voltage, SiC MOSFET in the frequency of oscillation and conventional ADS driving
Switching tube drain current is consistent with SiC switch mosfet pipe pipe gate source voltage frequency of oscillation upper and lower in Figure 17 (a), obtains grid source
Voltage oscillation, which will receive drain-source voltage oscillation, to be influenced, and since parasitic parameter influences, the higher-order of oscillation is had occurred when increasing in drain current,
Due to anti-paralleled diode reverse recovery current and effect of parasitic capacitance, the overshoot of 16A or so is resulted in；SiC of the present invention
For MOSFET gate drive scheme when upper SiC switch mosfet pipe is opened, upper SiC switch mosfet pipe drain-source voltage is in electric current
In change procedure, there is the obvious higher-order of oscillation, the frequency of oscillation and the present invention drive upper SiC switch mosfet pipe drain electrode electricity
Stream and SiC switch mosfet pipe pipe gate source voltage frequency of oscillation is consistent up and down in Figure 17 (a), drain-source voltage variation is greater than traditional
Drive scheme opens speed and becomes faster, and since parasitic parameter influences, SiC switch mosfet pipe drain current increases in present invention driving
The higher-order of oscillation has occurred when big, since current variation speeds are faster than conventional ADS driving, oscillation amplitude drains electric than conventional drive scheme
Stream oscillation is big, but still in safe range, due to anti-paralleled diode reverse recovery current and effect of parasitic capacitance, cause
The overshoot of 7A or so, overshoot amplitude are less than conventional drive scheme；The drain current pace of change of the present invention program is significantly greater than
Conventional drive scheme opens speed and becomes faster, and turn-on consumption can be by drain-source voltage in opening process and drain current product integral
It obtains, can intuitively be found out by Figure 17 (b), using drive scheme of the present invention, reduced due to opening speed promotion and current overshoot,
Turn-on consumption is greatly reduced.
Technical characteristic of the present invention without description can realize that details are not described herein by or using the prior art, certainly,
The above description is not a limitation of the present invention, and the present invention is also not limited to the example above, the ordinary skill of the art
The variations, modifications, additions or substitutions that personnel are made within the essential scope of the present invention also should belong to protection model of the invention
It encloses.
Claims (6)
1. a kind of driving circuit for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that including push-pull circuit, capacitor
Auxiliary circuit, the push-pull circuit and capacitor auxiliary circuit connect and constitute complete operating circuit on the main circuit, the main electricity
Routing is connected to two SiC switch mosfet pipes up and down on same bridge arm and constitutes；
Be connected to two opto-coupler chip input terminals in two control signal outputs of controller, two opto-coupler chips it is defeated
Outlet is separately connected the control signal input of two push-pull circuit and the two capacitors auxiliary circuit, two push-pull circuit
Two output ends connect respectively with the grid of two SiC switch mosfet pipes on the same bridge arm of the main circuit, described two
The input terminal of push-pull circuit connects+20V and-the 5V output pin of two isolated power supply chips respectively；
The two opto-coupler chip signal output ends are connected to the base stage of two groups of triodes in the capacitor auxiliary circuit, described
The collector of two groups of triodes passes through respectively on the same bridge arm of two groups of auxiliary capacitors and the main circuit in capacitor auxiliary circuit
The source electrode of two SiC switch mosfet pipes is connected；
The emitter of triode described in two groups is connected respectively to two SiC switch mosfets of the same bridge arm of the main circuit or more
The grid of pipe, two groups of diodes of inverse parallel respectively between the emitter and collector of triode described in two groups, the same bridge arm
The source electrode of upper and lower two SiC MOSFET connects the 0V output pin of two isolated power supply chips respectively.
2. the driving circuit according to claim 1 for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that institute
Stating two groups of triodes in capacitor auxiliary circuit is two PNP triodes and two NPN triodes, and the capacitor auxiliary circuit is by two
Group triode and four auxiliary capacitor compositions；The control signal of the controller output passes through the two opto-coupler chip inputs respectively
To the base stage of two NPN triodes and two PNP triodes of the capacitor auxiliary circuit；Two PNP triodes
Pass through four auxiliary capacitors respectively with the collector of two NPN triodes and is connected to two SiC switch mosfet pipes
Source electrode, the emitter of triode described in two groups is connected to the grid of the two SiC MOSFET.
3. the driving circuit according to claim 1 for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that institute
Push-pull circuit is stated by two two power supply chips with+20V, 0V and three pins of -5V, two NOT gates and two groups of MOSFET elements
Composition, every group of MOSFET element quantity are two；The control signal of the two opto-coupler chip output ends passes through respectively described in two
NOT gate be transferred to two groups described in MOSFET element grid；Two pins of+20V and -5V of two power supply chips are separately connected
The source electrode of the MOSFET element described in two groups, two output end of push-pull circuit pass through driving resistance respectively and are connected to the main electricity
In road on the grid of two SiC switch mosfet pipes, the source electrode of two SiC switch mosfet pipes is connected to
On the 0V pin of two power supply chips.
4. the driving circuit according to claim 3 for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that institute
State controller control signal pass sequentially through the two opto-coupler chip input terminals, it is described push away g1, g2 input terminal for exempting from circuit, transmission
On the grid of two SiC switch mosfet pipes on to the same bridge arm of the main circuit.
5. the driving circuit according to claim 3 for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that two
The control signal of opto-coupler chip output pass through two NOT gates be transmitted to two groups described in MOSFET element grid on, two groups
The two pins of the SiC MOSFET element turning-on voltage are 20V and 0V, and the two pins of shutdown voltage are 0V and -5V.
6. the driving circuit according to claim 2 for inhibiting the crosstalk of SiC MOSFET gate pole and oscillation, which is characterized in that with
The circuit debugging voltage of auxiliary capacitor described in the two of them of two SiC switch mosfet pipe grid sources connected in parallel is+20V,
The circuit shutdown voltage of itself and auxiliary capacitor described in other two is -5V.
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