CN113315354A

CN113315354A - Low-impedance clamping drive circuit for inhibiting crosstalk of SiC MOSFET (Metal-oxide-semiconductor field Effect transistor)

Info

Publication number: CN113315354A
Application number: CN202110701401.XA
Authority: CN
Inventors: 张雷; 吴典; 郭晓丽; 秦岭; 桑顺; 黄杰杰; 任磊
Original assignee: Nantong University
Current assignee: Nantong University
Priority date: 2021-06-24
Filing date: 2021-06-24
Publication date: 2021-08-27

Abstract

The invention discloses a low-impedance clamp driving circuit for inhibiting crosstalk of a SiC MOSFET (metal oxide semiconductor field effect transistor), which comprises an upper bridge arm and a lower bridge arm of the SiC MOSFET; each bridge arm comprises a first switch tube, a second switch tube, a first power supply voltage source, a second power supply voltage source, a grid resistance, a triode, a diode, a capacitor and a resistor. The invention ensures that the SiC MOSFET can not be conducted by mistake when positive crosstalk occurs and reverse breakdown can not occur when negative crosstalk occurs in the same bridge arm. The grid driving negative voltage of the bridge arm SiC MOSFET can be adjusted by adjusting the value of the resistance and the grid resistance; and the auxiliary circuit for inhibiting crosstalk only uses a passive device, so that the whole structure is simple and easy to realize. The invention is suitable for SiC MOSFETs of various types.

Description

Low-impedance clamping drive circuit for inhibiting crosstalk of SiC MOSFET (Metal-oxide-semiconductor field Effect transistor)

Technical Field

The invention relates to a low impedance clamp drive circuit for inhibiting crosstalk of a SiC MOSFET.

Background

SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors) have been gradually developed to have various advantages as third-generation wide bandgap Semiconductor power devices. Compared with the traditional switching device, the SiC MOSFET has the advantages of larger power density, higher working voltage, higher switching frequency, lower loss, higher working temperature and the like. In the current power electronic industry, SiC MOSFETs gradually replace part of traditional power devices to become mainstream in the industry.

In order to meet the development requirements in the high-power field, the working voltage and the working frequency of the SiC MOSFET are gradually increased, and the crosstalk phenomenon is gradually shown. There is a great safety risk if the crosstalk problem is not solved. Specifically, the drain-source voltage dv/dt of the passive tube is changed in the switching process of the active tube, and the dv/dt acts on the gate-drain capacitor C of the SiC MOSFET_gdUp to induce a current i_gdA displacement, a part of the displacement current flows through R_gL(in)And R_gLA voltage drop is generated, and a part of the voltage flows through the gate-source capacitor C_gs. Therefore, the gate potential voltage may be raised or lowered. If the gate-source voltage exceeds the threshold voltage of the passive tube, misconduction will occur, and if the gate-source voltage is lower than the maximum negative voltage allowed by the gate, the passive tube will be damaged, which is a crosstalk problem of the SiC MOSFET. For C_gdThe introduced crosstalk voltage is generally obtained by connecting a capacitor in parallel with the gate and the source of the SiC MOSFET so as to provide a low-impedance branch circuit, thereby reducing the crosstalk voltage generated on a loop by the displacement current. This method has the problem of slowing the switching speed of the SiC MOSFET. Increasing the gate drive resistance can suppress the crosstalk voltage, but is equivalent to suppressing the crosstalk voltage by slowing the switching speed of the SiC MOSFET. Reducing stray inductance can also suppress crosstalk voltages, but in practice stray inductance cannot be completely removed.

Disclosure of Invention

The purpose of the invention is as follows: aiming at the prior art, the low-impedance clamping driving circuit for inhibiting the crosstalk of the SiC MOSFET is provided, the turn-off speed is improved, and the safe and reliable operation of the SiC MOSFET bridge circuit is maintained.

The technical scheme is as follows: a low-impedance clamping driving circuit for inhibiting crosstalk of a SiC MOSFET comprises an upper bridge arm of the SiC MOSFET and a lower bridge arm of the SiC MOSFET, and each bridge arm comprises a basic driving circuit and a crosstalk inhibiting circuit.

The low impedance clamp drive circuit for suppressing SiC MOSFET crosstalk of claim 1, wherein the primary drive circuit of the upper leg comprises a supply voltage source V_1HPower supply voltage source V_2HSwitch tube S_1HSwitch tube S_2HAnd a gate resistance R is turned on_{on_H}Turn-off gate resistance R_{off_H}(ii) a Supply voltage source V_1HAnode and switch tube S_1HIs connected to a supply voltage source V_1HAnd SiC MOSFET M₁The source electrodes of the two-way transistor are connected; the switch tube S_1HSource and on-gate resistance R_{on_H}Is connected to turn on the gate resistor R_{on_H}And the other end of the SiC MOSFET M₁And off-gate resistance R_{off_H}One end of the two ends are connected; supply voltage source V_2HNegative electrode of (2) and switching tube S_2HIs connected to a supply voltage source V_2HPositive electrode of (2) and SiC MOSFET M₁Source and supply voltage source V_1HThe negative electrodes are connected; switch tube S_2HDrain and off gate resistance R_{off_H}The other ends of the two are connected;

the basic driving circuit of the lower bridge arm comprises a power supply voltage source V_1LPower supply voltage source V_2LSwitch tube S_1LSwitch tube S_2LAnd a gate resistance R is turned on_{on_L}Turn-off gate resistance R_{off_L}(ii) a The supply voltage source V_1LAnode and switch tube S_1LIs connected to a supply voltage source V_1LAnd SiC MOSFET M₂The source electrodes are connected; switch tube S_1LSource and on-gate resistance R_{on_L}Is connected to turn on the gate resistor R_{on_L}And the other end of the SiC MOSFET M₂And off-gate resistance R_{off_L}One end of the two ends are connected; supply voltage source V_2LNegative electrode of (2) and switching tube S_2LIs connected to a supply voltage source V_2LAnode and SiC MOSFET M₂Source and supply voltage source V_1LThe negative electrodes are connected; switch tube S_2LDrain and off gate resistance R_{off_L}And the other end of the two are connected.

Furthermore, the crosstalk suppression circuit of the upper bridge arm comprises a resistor R_1HResistance R_2HDiode D_HTriode V_{T_H}Capacitor C_H(ii) a Capacitor C_HConnected in parallel to the off-gate resistor R_{off_H}One side of (a); triode V_{T_H}Collector and switch tube S_2HIs connected to the source of a triode V_{T_H}Emitter and on-gate resistance R_{on_H}And turn-off gate resistance R_{off_H}Is connected to the common terminal of the transistor V_{T_H}Base and resistor R of_1HIs connected to one end of a resistor R_1HThe other end of the switch tube S_2HThe drain electrodes of the two electrodes are connected; resistance R_2HAnd one end of SiC MOSFET M₁Is connected with the other end of the diode D_HIs connected to the cathode of a diode D_HPositive electrode of (2) and SiC MOSFET M₁The source electrodes of the two-way transistor are connected;

the lower bridge arm crosstalk suppression circuit comprises a resistor R_1LResistance R_2LDiode D_LTriode V_{T_L}Capacitor C_L(ii) a Capacitor C_LConnected in parallel to the off-gate resistor R_{off_L}One side of (a); triode V_{T_L}Collector and switch tube S_2LIs connected to the source of a triode V_{T_L}Emitter and on-gate resistance R_{on_L}And turn-off gate resistance R_{off_L}Is connected to the common terminal of the transistor V_{T_L}Base and resistor R of_1LIs connected to one end of a resistor R_1LThe other end of the switch tube S_2LThe drain electrodes of the two electrodes are connected; resistance R_2LAnd one end of SiC MOSFET M₂Is connected with the other end of the diode D_LIs connected to the cathode of a diode D_LPositive electrode of (2) and SiC MOSFET M₂The sources are connected.

Further, the switch tube S_1HSwitch tube S_2HSwitch tube S_1LSwitch tube S_2LAre both Si MOSFETs.

Further, the triode V_{T_H}Triode V_{T_L}Are all PNP triodes.

Further, the turn-on voltage of the basic driving circuit is +20V, and the turn-off voltage of the basic driving circuit is-5V.

Has the advantages that: by adjusting the voltage dividing resistor R of the SiC MOSFET of the upper bridge arm_2HAnd turn-off gate resistance R_{off_H}The gate drive negative voltage of the upper bridge arm SiC MOSFET can be adjusted by the resistance value of the resistor. Similarly, the voltage dividing resistor R of the SiC MOSFET of the lower bridge arm is adjusted_2LAnd turn-off gate resistance R_{off_L}The resistance value of the lower bridge arm SiC MOSFET is adjusted to drive negative voltage of the grid electrode of the lower bridge arm SiC MOSFET. In the same bridge arm, the SiC MOSFET cannot be conducted by mistake when positive crosstalk occurs, and reverse breakdown cannot occur when negative crosstalk occurs. And the circuit for inhibiting crosstalk only uses a passive device, so that the whole structure is simple and easy to realize.

The invention combines a voltage clamping method, a low-impedance branch shunting method and a negative pressure driving method, thereby not only improving the turn-off speed, but also maintaining the safe and reliable operation of the SiC MOSFET bridge circuit. The influence on the switching-on speed is small. The invention is suitable for SiC MOSFETs of various types.

At the moment of switching off the active tube, the gate-source capacitance discharges through the auxiliary capacitance, so that the switching off speed of the active tube is accelerated, and the switching off loss of the active tube is reduced.

The drive circuit of the invention can also be applied to the crosstalk suppression drive of other power tube bridge circuits.

Drawings

FIG. 1 is a topological structure diagram of the present invention;

FIG. 2 is t₃-t₄Driving current and bus current trend graphs in a time period;

FIG. 3 is t₇-t₈Driving current and bus current trend graphs in a time period;

FIG. 4 is an equivalent simplified circuit when the lower arm SiC MOSFET crosstalk suppression auxiliary circuit is not in operation;

FIG. 5 is an equivalent simplified circuit of the triode access circuit when the lower bridge arm SiC MOSFET is in crosstalk;

FIG. 6(a) shows an active tube M₁Opening ofTime-waveform diagrams of gate-source voltages of an upper bridge arm and a lower bridge arm;

FIG. 6(b) shows the active tube M₁The waveform diagram of the grid source voltage of the upper bridge arm and the lower bridge arm when the bridge is turned off;

FIG. 7(a) shows the active transistor M without the auxiliary circuit for suppressing crosstalk₁The waveform diagram of the grid source voltage of the upper bridge arm and the lower bridge arm when the bridge is switched on;

FIG. 7(b) shows the active transistor M without the auxiliary circuit for suppressing crosstalk₁And (3) a waveform diagram of the grid source voltage of the upper bridge arm and the lower bridge arm when the bridge is turned off.

Detailed Description

The invention is further explained below with reference to the drawings.

As shown in fig. 1, a low impedance clamp driver circuit for suppressing SiC MOSFET crosstalk includes a SiC MOSFET upper leg and a SiC MOSFET lower leg, each of which includes a primary driver circuit and a crosstalk suppression circuit.

The basic driving circuit of the upper bridge arm comprises a power supply voltage source V_1HPower supply voltage source V_2HSwitch tube S_1HSwitch tube S_2HAnd a gate resistance R is turned on_{on_H}Turn-off gate resistance R_{off_H}(ii) a Supply voltage source V_1HAnode and switch tube S_1HIs connected to a supply voltage source V_1HAnd SiC MOSFET M₁The source electrodes of the two-way transistor are connected; the switch tube S_1HSource and on-gate resistance R_{on_H}Is connected to turn on the gate resistor R_{on_H}And the other end of the SiC MOSFET M₁And off-gate resistance R_{off_H}One end of the two ends are connected; supply voltage source V_2HNegative electrode of (2) and switching tube S_2HIs connected to a supply voltage source V_2HPositive electrode of (2) and SiC MOSFET M₁Source and supply voltage source V_1HThe negative electrodes are connected; switch tube S_2HDrain and off gate resistance R_{off_H}And the other end of the two are connected.

The basic driving circuit of the lower bridge arm comprises a power supply voltage source V_1LPower supply voltage source V_2LSwitch tube S_1LSwitch tube S_2LAnd a gate resistance R is turned on_{on_L}Turn off and turn offGrid resistance R_{off_L}(ii) a The supply voltage source V_1LAnode and switch tube S_1LIs connected to a supply voltage source V_1LAnd SiC MOSFET M₂The source electrodes are connected; switch tube S_1LSource and on-gate resistance R_{on_L}Is connected to turn on the gate resistor R_{on_L}And the other end of the SiC MOSFET M₂And off-gate resistance R_{off_L}One end of the two ends are connected; supply voltage source V_2LNegative electrode of (2) and switching tube S_2LIs connected to a supply voltage source V_2LPositive electrode and SiC MOSFET M₂Source and supply voltage source V_1LThe negative electrodes are connected; switch tube S_2LDrain and off gate resistance R_{off_L}And the other end of the two are connected.

The crosstalk suppression circuit of the upper bridge arm comprises a resistor R_1HResistance R_2HDiode D_HTriode V_{T_H}Capacitor C_H(ii) a Capacitor C_HConnected in parallel to the off-gate resistor R_{off_H}One side of (a); triode V_{T_H}Collector and switch tube S_2HIs connected to the source of a triode V_{T_H}Emitter and on-gate resistance R_{on_H}And turn-off gate resistance R_{off_H}Is connected to the common terminal of the transistor V_{T_H}Base and resistor R of_1HIs connected to one end of a resistor R_1HThe other end of the switch tube S_2HThe drain electrodes of the two electrodes are connected; resistance R_2HAnd one end of SiC MOSFET M₁Is connected with the other end of the diode D_HIs connected to the cathode of a diode D_HPositive electrode of (2) and SiC MOSFET M₁Are connected.

Wherein, the switch tube S_1HSwitch tube S_2HSwitch tube S_1LSwitch tube S_2LAre both Si MOSFETs. Triode V_{T_H}Triode V_{T_L}Are all PNP triodes. The turn-on voltage of the basic driving circuit is +20V, and the turn-off voltage is-5V.

Further, the SiC MOSFET M in the upper arm is assumed in the analysis₁For the active tube, suppose SiC MOSFET M in the lower bridge arm₂Is a passive tube and always keeps an off state. Active tube M₁Performing an on-off operation S_1HAnd S_2HThe active tube M can be controlled by alternately turning on and off₁On and off.

Active tube M₁The four stages of the starting are specifically:

t₁before time of day, S_1HAnd S_1LClosing, S_2HAnd S_2LAnd (4) opening. Active tube M₁And a passive tube M₂In the off state. Driven pipe M₂Gate-source junction capacitor C_gsLAnd a capacitor C_LSupplied voltage source V_2LCharging to negative pressure. At this point, the passive tube M₁The body diode of (1) freewheeling the inductor current.

Stage 1[ t ]₁-t₂]：t₁Starting from moment to moment, the active pipe M₁Switching on, because the crosstalk suppression auxiliary circuit is not connected into the switching-on loop, the active tube M₁The turn-on speed is not affected. Active tube M₁The gate-source voltage rises. But the gate-source voltage does not exceed the threshold voltage, the channel is not opened, and the active tube M₁And a passive tube M₂The drain current and the drain-source voltage of the transistor are not changed, so that the problem of crosstalk does not occur. The current at this stage is still from the passive tube M₂The body diode continues current, and the voltage of the passive tube is still 0V.

Stage 2[ t ]₂-t₃]: active tube M₁When the gate-source voltage reaches the threshold value, the channel of the transistor is opened and the passive tube M is connected₂The body diode of (2) commutates, and when the diode is turned off, the commutation is finished, and the stage 2 is finished. At this stage, the active pipe M₁And a passive tube M₂The drain current of (2) changes rapidly.

Stage 3[ t ]₃-t₄]: as shown in fig. 2: due to the gate-source voltage v_gsHOn the Miller platform, the active pipe M₁After the freewheeling diode is cut off, the passive tube M₂The drain-source voltage of which is raised, the gate-drain junction capacitance C_gdLAnd drain-source junction capacitance C_dsLCharging is carried out, wherein part of the charging current flows through the grid source junction capacitor and part of the charging current flows through the off-resistance R_{off_L}. Because the gate-source junction capacitance of the passive tube is at t₁The time is charged to a negative voltage before, so that a part of the forward voltage spike is suppressed. The current flows through the off-gate resistor R_{off_L}A negative voltage drop is generated, so that the triode V_{T_L}The emitter junction is forward biased, the triode is conducted, and the power supply voltage V is_2LFrom loading at D_L、R_2LAnd R_{off_L}Two ends of the branch; is converted to be loaded in D_LAnd R_2LTwo ends of the serial branch. Driven pipe M₂The gate-source voltage is clamped. Further, when the capacitor C is used_LWhen large enough, the branch becomes a low impedance branch, shunting most of the displacement current.

Stage 4[ t ]₄-t₅]: active tube M₁Gate source voltage v_gsAnd continuously rising on the basis of the Miller voltage until the Miller voltage rises to a given driving high level, and ending the opening process.

Two SiC MOSFET switching tubes are connected in series on the same bridge arm in a main circuit, wherein the five stages of the turn-off of the driving tube are as follows:

stage 5[ t ]₅-t₆]: off initial state, S_1HOpening, S_2HTurn-off, active pipe M₁In a stable conducting state. Active tube M₁Gate source voltage v_gsHEqual to drive high level V_1H。

Stage 6[ t ]₆-t₇]：S_1HClosing, S_2HOpen, active pipe M₁The grid voltage becomes low level, and the grid source electrode junction capacitance C_gsHThrough parasitic resistance R_gH(in)To the capacitor C_HDischarging due to off-stage instantaneous gate-source junction capacitance C_gsHIs much higher than the voltage of the capacitor C_HVoltage across, so gate-source junction capacitance C_gsHTo the capacitor C_HCharging, active tube M₁The shutdown process is accelerated. No crosstalk occurs at this stage.

Stage 7[ t ]₇-t₈]: as shown in fig. 3: when the gate source voltage v_gsHWhen the tube descends to the Miller platform, the active tube M₁Drain-source voltage v_dsHStarting to rise, driven tube M₂Drain-source voltage v_dsLBegins to descend, is driven by the tube M₂Gate to drain voltage v_gdLAnd also decreases at the same time. The upper flow of the gate-drain capacitance is C_gdLdv_gdLMiller current of/dt. At this stage, current continuously flows out of the capacitor C_LAnd gate-source junction capacitance C_gsL. Due to the capacitance C_LIn parallel, the Miller current passes through a capacitor C_LShunting suppresses negative voltage spikes. Further, the miller current may also pass through diode D_LAnd a resistance R_2LThe serial branch is used for shunting. The negative voltage is also inhibited.

Stage 8[ t ]₈-t₉]: active tube M₁Gate source voltage v_gsHContinuing to descend on the basis of the Miller platform, C_gsHBy R_gH(in)To a driving power supply V_2HAnd an auxiliary capacitor C_HAnd (4) discharging. At this stage, the passive tube M₂The diode starts to be conducted, the upper tube and the lower tube start to change the current, and the drain current i of the active tube_dHDecrease; until the current of the active tube is zero, the load current is totally controlled by the passive tube M₂The body diode freewheels and this phase ends.

Stage 9[ t ]₈-t₉]: active tube M₁Gate source voltage v_gsHContinues to drop until the gate-source voltage v_gsHThe design negative value is reached, and the shutdown process is finishedAnd (5) the whole switching-on and switching-off process.

Further, assume a lower SiCSMOSFET switch tube M₂For the active tube, an upper SiCMOS MOSFET switch tube M is assumed₁Is a passive tube and always keeps an off state. The two SiCMOSFET embodiments are similar to those described above.

As an auxiliary capacitor C_H、C_LSufficiently large, capacitance C_H、C_LThe impedance of the branch is small, and the effect of shunting the capacitance displacement current of the grid drain junction is achieved. Fig. 4 is an equivalent simplified circuit when the lower arm SiCMOSFET crosstalk suppression auxiliary circuit does not operate. Active tube M₁Starting the switching action, the passive tube M₂The drain-source voltage of (a) starts to change, and the drain-source voltage change amount thereof is approximately:

v_c＝kt

in which k is represented by a passive tube M₂The drain-source voltage rate of change, t, represents time.

The following formula can be obtained according to kirchhoff's law:

in the formula, C_gdLIs a gate-drain junction capacitance, C_gsLIs a gate-source junction capacitor, R_{off_L}Is a gate turn-off resistance, R_gL(in)Is the parasitic resistance of the gate, v_gsLIs a gate-source voltage, V_2LFor supply voltage source, i_gdLIs the Miller current i_gsLIs the gate-source current.

Solving the equation set to obtain a gate-source capacitance voltage expression

Wherein R ═ R_gL+R_gL(in)，C_iss＝C_gdL+C_gsL

For example, the triode is connected into the circuit when the lower bridge arm SiCSMOSFET in FIG. 5 has crosstalk. Gate turn-off resistance R_{off_L}Is required to be so large thatThe emitter junction of the triode is forward biased to drop voltage, so that the resistor R is turned off_{off_L}The value of (A) should satisfy:

in the formula, V_{T_L(th)}Is the forward bias voltage of the emitter junction of the triode,

is a capacitor C_LThe voltage of (c).

Further, assume an upper SiC MOSFET switch transistor M₂For the active tube, the lower SiCMOS MOSFET switch tube M is assumed₁Is a passive tube and always keeps an off state. The mathematical model analysis process is similar to that described above.

The crosstalk suppression effect of the present invention was analyzed by taking fig. 6 and 7 as an example.

FIG. 6 shows a driving circuit of the present invention, when the active tube M is used₁And (3) a waveform diagram of the grid source voltage of the upper bridge arm and the lower bridge arm during operation. Active tube M₁When opened, the passive tube M₂The peak voltage is-3.98V due to forward crosstalk. Active tube M₁When turned off, the passive tube M₂The peak voltage is-5.04V under negative crosstalk.

Fig. 7 is a waveform diagram of gate-source voltages of upper and lower arms without adding a series-interference suppression auxiliary circuit. Active tube M₁When opened, the passive tube M₂The peak voltage is-3.18V due to forward crosstalk. Active tube M₁When turned off, the passive tube M₂The peak voltage is-8.85V under negative crosstalk.

By contrast, the effect of suppressing crosstalk is obviously better than that of an auxiliary circuit without crosstalk suppression. Besides, the effect of the invention for inhibiting oscillation is better than that of the circuit without the auxiliary circuit for inhibiting series interference.

The invention is not described in detail, but is well known to those skilled in the art.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims

1. A low-impedance clamping driving circuit for inhibiting crosstalk of a SiC MOSFET is characterized by comprising an upper bridge arm of the SiC MOSFET and a lower bridge arm of the SiC MOSFET, wherein each bridge arm comprises a basic driving circuit and a crosstalk inhibiting circuit.

2. The low impedance clamp drive circuit for suppressing SiC MOSFET crosstalk of claim 1, wherein the primary drive circuit of the upper leg comprises a supply voltage source V_1HPower supply voltage source V_2HSwitch tube S_1HSwitch tube S_2HAnd a gate resistance R is turned on_{on_H}Turn-off gate resistance R_{off_H}(ii) a Supply voltage source V_1HAnode and switch tube S_1HIs connected to a supply voltage source V_1HAnd SiC MOSFET M₁The source electrodes of the two-way transistor are connected; the switch tube S_1HSource and on-gate resistance R_{on_H}Is connected to turn on the gate resistor R_{on_H}And the other end of the SiC MOSFET M₁And off-gate resistance R_{off_H}One end of the two ends are connected; supply voltage source V_2HNegative electrode of (2) and switching tube S_2HIs connected to a supply voltage source V_2HPositive electrode of (2) and SiC MOSFET M₁Source and supply voltage source V_1HThe negative electrodes are connected; switch tube S_2HDrain and off gate resistance R_{off_H}The other ends of the two are connected;

the basic driving circuit of the lower bridge arm comprises a power supply voltage source V_1LPower supply voltage source V_2LSwitch tube S_1LSwitch tube S_2LAnd a gate resistance R is turned on_{on_L}Turn-off gate resistance R_{off_L}(ii) a The supply voltage source V_1LAnode and switch tube S_1LIs connected to a supply voltage source V_1LAnd SiC MOSFET M₂The source electrodes are connected; switch tube S_1LSource and on-gate resistance R_{on_L}One end of (A)Connected to turn on the gate resistor R_{on_L}And the other end of the SiC MOSFET M₂And off-gate resistance R_{off_L}One end of the two ends are connected; supply voltage source V_2LNegative electrode of (2) and switching tube S_2LIs connected to a supply voltage source V_2LPositive electrode and SiC MOSFET M₂Source and supply voltage source V_1LThe negative electrodes are connected; switch tube S_2LDrain and off gate resistance R_{off_L}And the other end of the two are connected.

3. The low impedance clamp drive circuit for suppressing SiC MOSFET crosstalk of claim 2, wherein the crosstalk suppression circuitry for the upper leg comprises a resistor R_1HResistance R_2HDiode D_HTriode V_{T_H}Capacitor C_H(ii) a Capacitor C_HConnected in parallel to the off-gate resistor R_{off_H}One side of (a); triode V_{T_H}Collector and switch tube S_2HIs connected to the source of a triode V_{T_H}Emitter and on-gate resistance R_{on_H}And turn-off gate resistance R_{off_H}Is connected to the common terminal of the transistor V_{T_H}Base and resistor R of_1HIs connected to one end of a resistor R_1HThe other end of the switch tube S_2HThe drain electrodes of the two electrodes are connected; resistance R_2HAnd one end of SiC MOSFET M₁Is connected with the other end of the diode D_HIs connected to the cathode of a diode D_HPositive electrode of (2) and SiC MOSFET M₁The source electrodes of the two-way transistor are connected;

the lower bridge arm crosstalk suppression circuit comprises a resistor R_1LResistance R_2LDiode D_LTriode V_{T_L}Capacitor C_L(ii) a Capacitor C_LConnected in parallel to the off-gate resistor R_{off_L}One side of (a); triode V_{T_L}Collector and switch tube S_2LIs connected to the source of a triode V_{T_L}Emitter and on-gate resistance R_{on_L}And turn-off gate resistance R_{off_L}Is connected to the common terminal of the transistor V_{T_L}Base and resistor R of_1LIs connected to one end of a resistor R_1LThe other end of the switch tube S_2LIs connected to the drain electrode(ii) a Resistance R_2LAnd one end of SiC MOSFET M₂Is connected with the other end of the diode D_LIs connected to the cathode of a diode D_LPositive electrode of (2) and SiC MOSFET M₂The sources are connected.

4. The SiC MOSFET crosstalk suppression low impedance clamp drive circuit of claim 2, wherein said switching tube S_1HSwitch tube S_2HSwitch tube S_1LSwitch tube S_2LAre both SiMOSFET.

5. The SiC MOSFET crosstalk suppression low impedance clamp drive circuit of claim 3, wherein said triode V_{T_H}Triode V_{T_L}Are all PNP triodes.

6. The low impedance clamp driver circuit for suppressing SiC MOSFET crosstalk of any of claims 1-5, wherein the fundamental driver circuit has a turn-on voltage of +20V and a turn-off voltage of-5V.