CN112234810B - Novel SiC MOSFET oscillation suppression circuit applied to half-bridge circuit - Google Patents

Novel SiC MOSFET oscillation suppression circuit applied to half-bridge circuit Download PDF

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CN112234810B
CN112234810B CN202010924021.8A CN202010924021A CN112234810B CN 112234810 B CN112234810 B CN 112234810B CN 202010924021 A CN202010924021 A CN 202010924021A CN 112234810 B CN112234810 B CN 112234810B
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voltage
diode
sic mosfet
feedback
bus
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CN112234810A (en
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王来利
杨成子
李华清
于龙洋
刘星烁
朱梦宇
裴云庆
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention discloses a novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit, wherein a direct current bus is connected with a drain electrode of a second SiC MOSFET, one end of a second clamping capacitor and one end of a first feedback module, a source electrode of the second SiC MOSFET is connected with a negative electrode of a second collecting diode, a load end, a positive electrode of a first collecting diode and a drain electrode of the first SiC MOSFET, a positive electrode of the second collecting diode and the other end of the second clamping capacitor are connected with one end of a second feedback module, a negative electrode of the first collecting diode is connected with one end of the first clamping capacitor and the other end of the first feedback module, a low voltage source is connected with the source electrode of the first SiC MOSFET, the other end of the second clamping capacitor and the other end of the second feedback module, the circuit can effectively suppress overvoltage, and a clamping capacitor in the circuit can feed back energy to a direct current side through an inductance branch circuit, and only participate in the circuit process when an overvoltage occurs.

Description

Novel SiC MOSFET oscillation suppression circuit applied to half-bridge circuit
Technical Field
The invention relates to a novel SiC MOSFET oscillation suppression circuit, in particular to a novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit.
Background
The SiC MOSFET has the excellent performances of high switching speed, low on-resistance, high working temperature and the like, and is widely applied to high-frequency, high-efficiency and high-power-density power electronic equipment. In the application process, the high-frequency characteristic of the SiC MOSFET often causes overvoltage and oscillation, the direct-current voltage utilization rate is reduced, the electromagnetic compatibility problem is aggravated, and the stability of the system is reduced.
In power electronic devices, conventional methods for suppressing overvoltage and oscillation during switching of SiC MOFETs can be divided into three categories: the use of gate drive active control, the reduction of power loop parasitic inductance, and the use of snubber circuits. The gate drive active control reduces the switching loss of the power device by adjusting the gate drive resistance, the drive voltage or the drive current in real time, and inhibits overvoltage and oscillation, thereby effectively improving the switching performance. The advanced drive active control for high power IGBT switching performance improvement and overvoltage protection is used by the scholars to control the voltage overshoot at the turn-off of the power device at a predetermined reference value by a fast closed-loop overvoltage protection circuit. The method has good application effect, but the design of a grid driving circuit and a control method is more complex. When the SiC MOFET is turned off, parasitic inductance in the power loop is a major cause of voltage overshoot. Therefore, reducing the inductance of the power loop is the most direct method for reducing the overvoltage and suppressing the oscillation, and when the method is used, the distribution of the inductance of the power loop is relatively complex, the inductance can be reduced to about 20nH to the maximum extent, and a certain overvoltage is still generated. The buffer circuit is an economical and effective solution to the problems of overvoltage and power oscillation, and in the half-bridge structure, the decoupling capacitor is simple in design and widely applied, but easily causes low-frequency oscillation. The high-order RC buffer circuit is proposed by a learner to solve the low-frequency problem, the high-order RC buffer circuit has good performance but is complex in design, no matter which phase bridge arm buffer is adopted, the parasitic inductance of the bus can be decoupled from the phase change loop, and the conduction loss of a power device can be obviously increased.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art, and providing a novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit, which can effectively suppress an overvoltage, and a clamp capacitor in the circuit can feed back energy to a dc side through an inductive branch, and only participate in a circuit process when the overvoltage occurs.
In order to achieve the above object, the novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit according to the present invention includes a dc bus, a first SiC MOSFET tube, a second SiC MOSFET tube, a first clamping capacitor, a second clamping capacitor, a first feedback module, a second feedback module, a load terminal, a first collecting diode, a second collecting diode, and a low voltage source;
the direct current bus is connected with the drain electrode of the second SiC MOSFET tube, one end of the second clamping capacitor and one end of the first feedback module, the source electrode of the second SiC MOSFET tube is connected with the negative electrode of the second collecting diode, the load end, the positive electrode of the first collecting diode and the drain electrode of the first SiC MOSFET tube, the positive electrode of the second collecting diode and the other end of the second clamping capacitor are connected with one end of the second feedback module, the negative electrode of the first collecting diode is connected with one end of the first clamping capacitor and the other end of the first feedback module, and the low-voltage source is connected with the source electrode of the first SiC MOSFET tube, the other end of the second clamping capacitor and the other end of the second feedback module.
The first feedback module comprises a first starting resistor, a first fly-wheel diode and a first feedback inductor, wherein a direct current bus is connected with one end of the first feedback inductor and one end of the first starting resistor, the other end of the first feedback inductor is connected with the negative electrode of the first fly-wheel diode, and the negative electrode of the first collection diode is connected with the other end of the first starting resistor and the positive electrode of the first fly-wheel diode.
The second feedback module comprises a second starting resistor, a second fly-wheel diode and a second feedback inductor, wherein the anode of the second collecting diode is connected with one end of the second feedback inductor and one end of the second starting resistor, the other end of the second feedback inductor is connected with the cathode of the second fly-wheel diode, and the low-voltage source is connected with the other end of the second starting resistor and the anode of the second fly-wheel diode.
When the main power loop is electrified, the voltage of the direct current bus rises, and the voltages on the first clamping capacitor and the second clamping capacitor are respectively charged through the first opening resistor and the second opening resistor to rise until the voltages on the first clamping capacitor and the second clamping capacitor reach the voltage V of the direct current busDCThe main power loop start-up procedure ends.
At t1-t2At any moment, under the action of a driving circuit, the drain-source voltage v of the first SiC MOSFETds_Q1Is increased wherein vds_Q1Lower than voltage V of DC busDCUnder the action of the main power starting circuit, the voltage at two ends of the first clamping capacitor reaches the direct current busVoltage V ofDCThe voltage of the cathode of the first collecting diode is higher than that of the anode of the first collecting diode, the first collecting diode is turned off in the reverse direction, and the first clamping capacitor has no influence on the voltage change of the first SiC MOSFET tube in the period;
at t2-t3At the moment, when the drain-source voltage v of the first SiC MOSFET tubeds_Q1To the voltage V of the DC busDCWhen the first collecting diode is started, the first clamping capacitor is connected to the drain-source side of the first SiC MOSFET in parallel, and at the moment, the first clamping capacitor starts to clamp the drain-source voltage v of the first SiC MOSFETds_Q1Limiting and turning off overvoltage and oscillation, and continuing until the current of the direct current bus crosses zero;
at t3-t4At time t3At the moment, the turn-off process of the first SiC MOSFET is finished, and the drain-source voltage v of the first SiC MOSFET isds_Q1When the voltage of the direct current bus is reduced, the first collecting diode is turned off, and the voltage V at the two ends of the first clamping capacitor is obtained due to all oscillation energy obtained by the first clamping capacitorcc1To reach Vccl_MAXAnd is higher than the voltage V of the DC busDCAt this time, the energy stored in the first clamping capacitor starts to be discharged to the dc side through the first freewheeling diode and the first feedback inductance, and the voltage V across the first clamping capacitorcc1Decreasing, energy feedback current iFRises until t4At the moment, the voltage V across the first clamping capacitorcc1Again equal to the bus voltage VDC；
At t4-t5At the moment, the voltage V across the first clamping capacitorcc1Continuing to drop to lead the first collecting diode to be conducted, and leading the drain-source voltage v of the first SiC MOSFET tube to beds_Q1Voltage V to dc busDCIn the same way, in the first feedback inductance LF1Under the influence of (2), the inductance current i of the first feedback inductanceFMaintaining to form a loop through the first collecting diode to the load side until the first feedback inductance LF1Of the inductor current iFAnd decreases to zero.
The invention has the following beneficial effects:
the novel SiC MOSFET oscillation suppression circuit applied to the half-bridge circuit is composed of ten passive elements when working specifically, the structure and the working principle are simple, meanwhile, the turn-off overvoltage and the oscillation energy stored by the clamping capacitor are fed back to a direct current side and a load side through a feedback branch circuit composed of the energy feedback inductor and the fly-wheel diode, the energy recovery is realized, the overvoltage can be effectively suppressed, the voltage overshoot in the switching process is effectively reduced, the high-frequency oscillation of a power loop is suppressed, meanwhile, the clamping capacitor only participates in the circuit process when the overvoltage is generated, and the switching loss is greatly reduced compared with an RC buffer circuit;
drawings
FIG. 1 is a topological structure diagram of the present invention;
FIG. 2 is an analysis diagram of the power-up process of the main power loop of the present invention;
FIG. 3 is an analysis of the power device turn-off process of the present invention;
fig. 4 is a timing waveform diagram of the power device turn-off process in the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1, the novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit according to the present invention includes a dc bus, a first SiC MOSFET Q1, a second SiC MOSFET Q2, and a first clamp capacitor Cc1A second clamp capacitor Cc2A first feedback module, a second feedback module, a load end, a first collecting diode DH1A second collecting diode DH2And a low voltage source; DC bus, drain of second SiC MOSFET Q2, and second clamping capacitor Cc2Is connected with one end of the first feedback module, and the source electrode of the second SiC MOSFET Q2 and the second collecting diode DH2Negative pole, load end, first collection diode DH1Is connected to the drain of the first SiC MOSFET Q1, and a second collection diode DH2Positive electrode and second clamping capacitor Cc2The other end of the first feedback module is connected with one end of a second feedback module, and a first collection diode DH1Negative electrode of and first clamp capacitor Cc1Is connected with the other end of the first feedback module, and the low voltage source is connected with the source electrode of the first SiC MOSFET Q1 and the second clamping capacitor Cc2The other end of the second feedback module is connected with the other end of the second feedback module.
The first feedback module comprises a first turn-on resistor Rs1A first freewheeling diode DF1And a first feedback inductor LF1Wherein, the DC bus and the first feedback inductance LF1And a first turn-on resistance Rs1Is connected to the first feedback inductance LF1And the other end of the first fly-wheel diode DF1Is connected to the negative pole of a first collecting diode DH1Negative electrode and first on-resistance Rs1And the other end of the first freewheeling diode DF1The positive electrodes of the two electrodes are connected.
The second feedback module comprises a second turn-on resistor RS2A second freewheeling diode DF2And a second feedback inductor LF2Wherein the second collecting diode DH2Positive electrode of (2) and second feedback inductor LF2And a second on-resistance RS2Is connected to a second feedback inductor LF2And the other end of the first freewheeling diode DF2Is connected with the negative electrode of the first switching resistor R, the low voltage source is connected with the second switching resistor RS2And the other end of the second freewheel diode DF2The positive electrodes of the two electrodes are connected.
Referring to fig. 2, 3 and 4, in operation, when the main power loop is energized, the dc bus voltage rises and the first clamping capacitor CC1And a second clamp capacitor CC2The voltage on the first and second switches is respectively passed through the first and second turn-on resistors RS1And a second on-resistance RS2Charged and raised until the first clamp capacitor CC1And a second clamp capacitor CC2All the voltage of the upper voltage reaches the voltage V of the direct current busDCThe main power loop start-up procedure ends.
The working process of the first SiC MOSFET Q1 is as follows:
at t1-t2At the moment, under the action of a driving circuit, the drain-source voltage v of the first SiC MOSFET Q1ds_Q1Is raised, wherein vds_Q1Lower than voltage V of DC busDCUnder the action of the main power starting circuit, the first clamping capacitor CC1The voltage at two ends reaches the voltage V of the direct current busDCFirst collection diode DH1Is higher than the anode voltage thereof, a first collecting diode DH1Reverse turn off, during which the first clamping capacitor CC1The voltage change of the first SiC MOSFET Q1 is not influenced;
at t2-t3At the moment, the drain-source voltage v of the first SiC MOSFET Q1ds_Q1To the voltage V of the DC busDCWhile, the first collecting diode DH1Turning on the first clamp capacitor CC1Connected in parallel to the drain-source side of the first SiC MOSFET transistor Q1, at which time the first clamping capacitor CC1The drain-source voltage v of the first SiC MOSFET Q1 starts to be clampedds_Q1Limiting and turning off overvoltage and oscillation, and continuing until the current of the direct current bus crosses zero;
at t3-t4At time t3At this point, the turn-off process of the first SiC MOSFET Q1 is completed, and the drain-source voltage v of the first SiC MOSFET Q1 is increasedds_Q1Voltage V down to DC busDCFirst collecting diode DH1Off due to the first clamp capacitor CC1To obtain all the oscillation energy, a first clamping capacitor CC1Voltage V acrosscc1To reach Vccl_MAXAnd is higher than the voltage V of the DC busDCAt this time, the voltage is stored in the first clamp capacitor CC1The energy in (b) starts to pass through the first freewheeling diode DF1And a first feedback inductor LF1Discharged to the DC side, first clamping capacitor CC1Voltage V acrosscc1Decreasing, energy feedback current iFRises until t4At time, the first clamp capacitor CC1Voltage V acrosscc1Again equal to the bus voltage VDC；
At t4-t5At time, the first clamp capacitor CC1Voltage V acrosscc1Continues to fall, resulting in the first collection diodeDH1On, the drain-source voltage v of the first SiC MOSFET Q1ds_Q1Voltage V to dc busDCIn the same way, in the first feedback inductance LF1Under the influence of (2), the first feedback inductance LF1Of the inductor current iFHolding, forming a first collecting diode DH1To the load side loop until the first feedback inductance LF1Of the inductor current iFUntil it drops to zero.

Claims (1)

1. The novel SiC MOSFET oscillation suppression circuit applied to the half-bridge circuit is characterized by comprising a direct-current bus, a first SiC MOSFET (Q1), a second SiC MOSFET (Q2) and a first clamping capacitor (C)c1) A second clamping capacitor (C)c2) A first feedback module, a second feedback module, a load terminal, a first collecting diode (D)H1) A second collecting diode (D)H2) And a low voltage source;
a DC bus, a drain electrode of a second SiC MOSFET (Q2), and a second clamping capacitor (C)c2) Is connected to one end of the first feedback block, the source of the second SiC MOSFET (Q2) is connected to the second collection diode (D)H2) Negative pole, load terminal, first collecting diode (D)H1) Is connected to the drain of the first SiC MOSFET (Q1), and a second collection diode (D)H2) Positive electrode of (2) and second clamp capacitor (C)c2) Is connected with one end of a second feedback module, a first collecting diode (D)H1) Negative electrode of (1) and first clamp capacitor (C)c1) Is connected with the other end of the first feedback module, and the low voltage source is connected with the source electrode of the first SiC MOSFET (Q1) and the second clamping capacitor (C)c2) The other end of the first feedback module is connected with the other end of the second feedback module;
the first feedback module comprises a first turn-on resistor (Rs1) and a first freewheeling diode (D)F1) And a first feedback inductor (L)F1) Wherein the DC bus and the first feedback inductor (L)F1) And a first on-resistance (R)s1) Is connected to a first feedback inductor (L)F1) And the other end of the first freewheeling diode (D)F1) Is/are as followsNegative pole connected, first collecting diode (D)H1) And a first on-resistance (R)s1) And the other end of the first fly-wheel diode (D)F1) The positive electrodes of the two electrodes are connected;
the second feedback module comprises a second turn-on resistor (RS2) and a second freewheeling diode (D)F2) And a second feedback inductor (L)F2) Wherein the second collecting diode (D)H2) Positive pole and second feedback inductance (L)F2) And a second on-resistance (R)S2) Is connected to one end of a second feedback inductor (L)F2) And the other end of the first freewheeling diode (D) and a second freewheeling diode (D)F2) Is connected to the negative electrode of the first switching resistor (R), the low voltage source is connected to the second switching resistor (R)S2) And the other end of the second freewheel diode (D)F2) The positive electrodes of the two electrodes are connected;
when the main power loop is powered on, the DC bus voltage rises, and the first clamping capacitor (C)C1) And a second clamp capacitor (C)C2) The voltage on the first and second switches is respectively passed through the first and second turn-on resistors (R)S1) And a second on-resistance (R)S2) Charged and raised until the first clamp capacitor (C)C1) And a second clamp capacitor (C)C2) All the voltage of the upper voltage reaches the voltage V of the direct current busDCThe main power loop starting process is finished;
at t1-t2At the moment, under the action of a driving circuit, the drain-source voltage v of the first SiC MOSFET (Q1)ds_Q1Is increased wherein vds_Q1Lower than voltage V of DC busDCFirst clamping capacitor (C) under the action of main power starting circuitC1) The voltage at two ends reaches the voltage V of the direct current busDCFirst collection diode (D)H1) Is higher than its anode voltage, a first collecting diode (D)H1) Reverse turn off, during which the first clamp capacitor (C)C1) The voltage change of the first SiC MOSFET (Q1) is not influenced;
at t2-t3At the moment, when the drain-source voltage v of the first SiC MOSFET (Q1)ds_Q1To the voltage V of the DC busDCWhile the first collecting diode (D)H1) Turning on the first clamp capacitor (C)C1) Is connected in parallel to the drain-source side of the first SiC MOSFET (Q1), and at the same time, is connected with the first clamping capacitor (C)C1) Starting to clamp the drain-source voltage v of the first SiC MOSFET (Q1)ds_Q1Limiting and turning off overvoltage and oscillation, and continuing until the current of the direct current bus crosses zero;
at t3-t4At time t3At the moment, the turn-off process of the first SiC MOSFET (Q1) is finished, and the drain-source voltage v of the first SiC MOSFET (Q1)ds_Q1Voltage V down to DC busDCFirst collection diode (D)H1) Off due to the first clamp capacitor (C)C1) To obtain all the oscillation energy, a first clamping capacitor (C)C1) Voltage V acrosscc1To reach Vccl_MAXAnd is higher than the voltage V of the DC busDCAt this time, the voltage is stored in the first clamp capacitor (C)C1) The energy in (a) starts to pass through the first freewheeling diode (D)F1) And a first feedback inductor (L)F1) Discharged to the DC side, first clamping capacitor (C)C1) Voltage V acrosscc1Decreasing, energy feedback current iFRises until t4At time, the first clamp capacitor (C)C1) Voltage V acrosscc1Again equal to the bus voltage VDC；
At t4-t5At time, the first clamp capacitor (C)C1) Voltage V acrosscc1Continues to fall, resulting in a first collection diode (D)H1) On, the drain-source voltage v of the first SiC MOSFET (Q1)ds_Q1Voltage V to dc busDCIn the same way at the first feedback inductor (L)F1) Under the influence of (2), the first feedback inductance (L)F1) Of the inductor current iFHolding, forming a first collecting diode (D)H1) To the load side loop to the first feedback inductor (L)F1) Of the inductor current iFAnd decreases to zero.
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CN203193540U (en) * 2013-03-04 2013-09-11 薛涛 Pulse transformer leakage inductor energy recovery and buffer circuit
CN106253652A (en) * 2016-09-27 2016-12-21 桂林航天工业学院 A kind of over-pressure safety device of inverter

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