CN110492728A - A kind of SiC power device drive circuit and its control method can inhibit bridge arm crosstalk - Google Patents
A kind of SiC power device drive circuit and its control method can inhibit bridge arm crosstalk Download PDFInfo
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- CN110492728A CN110492728A CN201910771041.3A CN201910771041A CN110492728A CN 110492728 A CN110492728 A CN 110492728A CN 201910771041 A CN201910771041 A CN 201910771041A CN 110492728 A CN110492728 A CN 110492728A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of SiC power device drive circuits and its control method that can inhibit bridge arm crosstalk.Driving circuit of the invention includes the pole G driving circuit, the pole S driving circuit and the capacitor being located between the pole G driving circuit and the pole S driving circuit, the pole the G driving circuit includes positive voltage source, two control the first pole G switching tubes of G pole tension state, the 2nd pole G switching tube and opens, turn off resistance, the positive voltage source, the first pole G switching tube, open resistance, turn off resistance, the 2nd pole G switching tube is sequentially connected in series in order；The pole the S driving circuit includes the first pole S switching tube, the 2nd pole the S switching tube of negative supply and two control S pole tension states；Negative supply, the first pole S switching tube and the 2nd pole the S switching tube is sequentially connected in series in order.The grid sources connected in parallel capacitor of influence present invention alleviates to(for) switching speed effectively inhibits bridge arm cross-interference issue.
Description
Technical field
The invention belongs to power electronics fields, are related to SiC power device, and specifically one kind can inhibit bridge arm string
The SiC power device drive circuit and its control method disturbed.
Background technique
SiC power device operating voltage is high, switching speed is fast, operating temperature is high, is conducive to promote converters
Efficiency and power density, have a extensive future.But the high switching speed of SiC power device certainly will will cause high voltage/
Current changing rate, so that influence of the parasitic parameter to SiC power device switching characteristic becomes obviously, the bridge arm crosstalk of generation
Problem seriously affects the reliability of SiC power device, limits the advantage of SiC power device high switching speed.It therefore is realization
The reliable application of SiC power device high speed it may first have to solve cross-interference issue.
Bridge circuit is common structure in converters, and MOSFET in an off state is referred to as passive pipe, place
It is actively to manage in the MOSFET of switch state.With the raising of devices switch speed, active pipe is turned on and off in bridge circuit
In the process, passive pipe gate-source voltage in an off state changes, and the displacement current of part grid source junction capacitance flows through
Grid source junction capacitance makes passive pipe gate-source voltage change, and positive spike or negative sense spike occurs, is referred to as crosstalk and asks
Topic.Gate-source voltage forward direction spike may cause incomplete conducting, increases switching loss, bridgc arm short is caused when serious；Grid source
Pole tension negative sense spike may cause the grid source breakdown (general negative sense safe voltage is 6-7V or so) of power device, damage device
Part.Therefore it is badly in need of solving cross-interference issue.
A kind of existing SiC power device drive circuit, as shown in Figure 1, due to SiC power device forward threshold voltage and
Negative sense safe voltage is smaller, causes to drive the optional section of negative pressure smaller；And the driving circuit can not adjust shutdown grid electricity
Resistance, thus can not regulation power device turn-off speed.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the problems of the above-mentioned prior art, providing one kind can inhibit bridge
The SiC power device drive circuit of arm crosstalk is separately led to using output separate type drive zone, judges branch, to mitigate grid
Influence of the sources connected in parallel capacitor for switching speed effectively inhibits bridge arm cross-interference issue, realizes that SiC power device high speed is reliable
Using.
For this purpose, the present invention adopts the following technical scheme that: a kind of SiC power device driving electricity can inhibit bridge arm crosstalk
Road, including the pole G driving circuit, the pole S driving circuit and the capacitor being located between the pole G driving circuit and the pole S driving circuit；
The pole the G driving circuit includes positive voltage source VGS, two control G pole tension states the first pole G switching tube S1、
2nd pole G switching tube S2With open, turn off resistance Rgon、Rgoff, the positive voltage source VGS, the first pole G switching tube S1, open electricity
Hinder Rgon, shutdown resistance Rgoff, the 2nd pole G switching tube S2It is sequentially connected in series in order；
The pole the S driving circuit includes negative supply VSSThe first pole S switching tube of S pole tension state is controlled with two
Sa1, the 2nd pole S switching tube Sa2；The negative supply VSS, the first pole S switching tube Sa1With the 2nd pole S switching tube Sa2In order
It is sequentially connected in series；
One end of the capacitor is connected to open resistance RgonWith shutdown resistance RgoffBetween the pole G driving circuit on, it is another
End is connected to the first pole S switching tube Sa1With the 2nd pole S switching tube Sa2Between the pole S driving circuit on.
In order to guarantee that the gate-source voltage forward direction spike due to caused by cross-interference issue is no more than the threshold value electricity of SiC power device
Press Uth, voltage negative sense spike is no more than negative sense safe voltage UGS_MAX(-).The driving circuit when positive spike occurs in gate-source voltage
It is turned off using negative pressure, when negative sense spike occurs in gate-source voltage, driving circuit is turned off using 0V.But the threshold of SiC power device
Threshold voltage and the lower (threshold voltage and grid source electrode negative sense safety electricity of 900V SiC power device of grid source electrode negative sense safe voltage
Pressure is respectively 1.75V and -8V), the application for high voltage, current changing rate is it is possible that forward voltage spike exceeds
Threshold voltage or negative voltage spike exceed grid source electrode negative sense safe voltage.
Therefore, it is necessary to the grid source electrode in SiC power device and a upper capacitors bigger than grid source junction capacitance, in grid source electrode
Between form the branch of an impedance very little, then the current component that flows through of the branch can be much larger than flowing through when crosstalk phenomenon occurs
Current component on grid source junction capacitance reduces gate-source voltage peak amplitude caused by cross-interference issue.
Based on the above, according to differentiation open resistance RgonWith shutdown resistance RgoffThe difference of mode, the present invention use defeated
Separate type driver distinguishes out, alleviates influence of the grid sources connected in parallel capacitor for switching speed, effectively inhibits bridge arm string
Problem is disturbed, realizes the reliable application of SiC power device high speed.This mode is not influenced by diode characteristic, and is driven back
Short out, parasitic gate inductance is small.
Since negative pressure turns off when driving circuit uses grid source electrode forward voltage spike, 0V is turned off when negative voltage spike, grid
Sources connected in parallel capacitor does not need too greatly, and the influence to switching speed is also smaller.
Supplement as above-mentioned technical proposal, the bridge arm include upper tube Q1With down tube Q2, upper tube Q1Connect Q1Driving electricity
Road, down tube Q2Connect Q2Driving circuit；
The Q1Driving circuit include the pole upper tube G driving circuit, upper tube S pole driving circuit and be located at the pole upper tube G drive
Upper capacitor C between dynamic circuit and the pole upper tube S driving circuitH；
The Q2Driving circuit include the pole down tube G driving circuit, down tube S pole driving circuit and be located at the pole down tube G drive
Lower capacitor C between dynamic circuit and the pole down tube S driving circuitL。
Supplement as above-mentioned technical proposal, the pole the upper tube G driving circuit include the positive voltage source V of upper tubeGS_H, two
Control the first pole upper tube G switching tube S of G pole tension state1_H, the second pole upper tube G switching tube S2_HIt opened with upper tube, turn off resistance
Rgon_H、Rgoff_H, the positive voltage source V of the upper tubeGS_H, the first pole upper tube G switching tube S1_H, upper tube open resistance Rgon_H, upper tube
Turn off resistance Rgoff_H, the second pole upper tube G switching tube S2_HIt is sequentially connected in series in order.
Supplement as above-mentioned technical proposal, the pole the upper tube S driving circuit includes upper tube negative supply VSS_HWith two
First pole upper tube S switching tube S of a control S pole tension statea1_H, the second pole upper tube S switching tube Sa2_H；The upper tube negative pressure
Power supply VSS_H, the first pole upper tube S switching tube Sa1_HWith the second pole upper tube S switching tube Sa2_HIt is sequentially connected in series in order.
Supplement as above-mentioned technical proposal, the upper capacitor CHOne end be connected to open resistance Rgon_HWith shutdown resistance
Rgoff_HBetween the pole G driving circuit on, the other end is connected to the first pole upper tube S switching tube Sa1_HWith the second pole upper tube S switching tube
Sa2_HBetween the pole S driving circuit on.
Supplement as above-mentioned technical proposal, the pole the down tube G driving circuit include the positive voltage source V of down tubeGS_L, two
Control the first pole down tube G switching tube S of G pole tension state1_L, the second pole down tube G switching tube S2_LIt opened with down tube, turn off resistance
Rgon_L、Rgoff_L, the positive voltage source V of the down tubeGS_L, the first pole down tube G switching tube S1_L, down tube open resistance Rgon_L, down tube
Turn off resistance Rgoff_L, the second pole down tube G switching tube S2_LIt is sequentially connected in series in order.
Supplement as above-mentioned technical proposal, the pole the down tube S driving circuit includes down tube negative supply VSS_LWith two
First pole down tube S switching tube S of a control S pole tension statea1_L, the second pole down tube S switching tube Sa2_L；The down tube negative pressure
Power supply VSS_L, the first pole down tube S switching tube Sa1_LWith the second pole down tube S switching tube Sa2_LIt is sequentially connected in series in order.
Supplement as above-mentioned technical proposal, the lower capacitor CLOne end be connected to down tube open resistance Rgon_LWith down tube
Turn off resistance Rgoff_LBetween the pole G driving circuit on, the other end is connected to the first pole down tube S switching tube Sa1_LWith the second down tube S
Pole switching tube Sa2_LBetween the pole S driving circuit on.
The present invention also provides a kind of control methods of SiC power device drive circuit, by SiC power device drive circuit
A cycle be divided into t0~t1、t1~t2、t2~t3、t3~t4Four-stage, down tube Q2Actively to manage, upper tube Q1Passively to manage
When control logic it is as follows:
t0~t1First stage: the second pole down tube G switching tube S2_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be 0V, be now in off state；Second pole upper tube G switching tube S2_HWith the first pole upper tube S switching tube
Sa1_HConducting, upper tube Q1Gate-source voltage be-Uss_H, to prevent down tube Q in second stage2The moment Q opened1Grid source electrode is just
It prepares to due to voltage spikes more than threshold voltage；
t1~t2Second stage: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be UGS_L, in t1Moment down tube Q2Conducting；Second pole upper tube G switching tube S2_HIt is switched with the first pole upper tube S
Pipe Sa1_HConducting, upper tube Q1Gate-source voltage be still-Uss_H, prevent down tube Q2The moment Q opened1The forward voltage point of grid source electrode
Peak is more than threshold voltage；
In down tube Q2Moment, upper tube Q is connected1Gate-source voltage rise rapidly, upper tube Q1Grid drain junction capacitance CGDHIt opens
Begin to charge, flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction electricity
Hold CGSHOn due to voltage spikes；
t2~t3Phase III: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be still UGS_L, in the conductive state；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube
Sa2_HConducting, upper tube Q1Gate-source voltage be 0V, to prevent down tube Q in fourth stage2The moment Q of shutdown1The negative sense of grid source electrode
Due to voltage spikes is more than that negative sense safe voltage is prepared；
t3~t4Fourth stage: the second pole down tube G switching tube S2_LWith the first pole down tube S switching tube Sa1_LConducting, down tube
Q2Gate-source voltage be-Uss_L, to prevent upper tube Q in next stage1The moment Q opened2The forward voltage spike of grid source electrode is super
Threshold voltage is crossed to prepare；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube Sa2_HConducting, upper tube Q1Grid source
Pole tension is 0V, therefore in an off state；
In down tube Q2Shutdown moment, upper tube Q1Gate-source voltage decline rapidly, upper tube Q1Grid drain junction capacitance CGDHIt opens
Begin to discharge, flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction electricity
Hold CGSHOn due to voltage spikes.
As the supplement of above-mentioned control method, upper tube Q1Auxiliary capacitor CHExploitation method it is as follows:
CHVoltage variety Δ U1Expression formula are as follows:
Wherein, a is down tube Q2Switching speed；UDCFor input direct-current voltage value；RG1HFor upper tube Q1The equivalent electricity of gate pole
Resistance；
Effectively to inhibit cross-interference issue, gate-source voltage forward direction spike is no more than threshold voltage Uth, and grid source electrode need to be made electric
Negative sense spike is pressed to be no more than negative sense safe voltage UGS_MAX(-),
C is obtained according to above two formulaHValue range, choose Δ U1Change the corresponding C in gentle sectionHValue.
The device have the advantages that as follows: the driving circuit that the present invention designs is simple and easy, driving circuit is short, grid
Parasitic inductance is small, avoids due to SiC power device forward threshold voltage and negative sense safe voltage is smaller causes to drive negative pressure
The optional lesser problem in section, alleviates influence of the grid sources connected in parallel capacitor for switching speed, effectively inhibits bridge arm crosstalk
Problem realizes the reliable application of SiC power device high speed.
Detailed description of the invention
Fig. 1 is a kind of existing circuit diagram of SiC power device drive circuit；
Fig. 2 is a kind of circuit diagram for the SiC power device drive circuit that can inhibit bridge arm crosstalk of the present invention；
Fig. 3 is a kind of logic control chart of SiC power device drive circuit of the present invention.
Specific embodiment
The invention will be further described with specific embodiment with reference to the accompanying drawings of the specification.
Embodiment 1
The present embodiment provides a kind of SiC power device drive circuits that can inhibit bridge arm crosstalk, as shown in Fig. 2, described
Bridge arm includes upper tube Q1With down tube Q2, upper tube Q1Connect Q1Driving circuit, down tube Q2Connect Q2Driving circuit.Upper tube Q in figure1Etc.
Imitating circuit includes upper tube Q1Gate pole equivalent resistance RG1H, grid drain junction capacitance CGDH, grid source junction capacitance CGSH, hourglass source electrode knot electricity
Hold CDSHAnd body diode D1.Down tube Q2Equivalent circuit include down tube Q2Gate pole equivalent resistance RG1L, grid drain junction capacitance
CGDL, grid source junction capacitance CGSL, hourglass source electrode junction capacity CDSLAnd body diode D2。
The Q1Driving circuit include the pole upper tube G driving circuit, upper tube S pole driving circuit and be located at the pole upper tube G drive
Upper capacitor C between dynamic circuit and the pole upper tube S driving circuitH。
The pole the upper tube G driving circuit includes the positive voltage source V of upper tubeGS_H, two control G pole tension states first on
The pole pipe G switching tube S1_H, the second pole upper tube G switching tube S2_HIt opened with upper tube, turn off resistance Rgon_H、Rgoff_H, the upper tube is just
Voltage source VGS_H, the first pole upper tube G switching tube S1_H, upper tube open resistance Rgon_H, upper tube turn off resistance Rgoff_H, the second upper tube G
Pole switching tube S2_HIt is sequentially connected in series in order.
The pole the upper tube S driving circuit includes upper tube negative supply VSS_HThe first of S pole tension state is controlled with two
The pole upper tube S switching tube Sa1_H, the second pole upper tube S switching tube Sa2_H；The upper tube negative supply VSS_H, the first pole upper tube S switch
Pipe Sa1_HWith the second pole upper tube S switching tube Sa2_HIt is sequentially connected in series in order.
The upper capacitor CHOne end be connected to open resistance Rgon_HWith shutdown resistance Rgoff_HBetween the pole G driving circuit
On, the other end is connected to the first pole upper tube S switching tube Sa1_HWith the second pole upper tube S switching tube Sa2_HBetween the pole S driving circuit
On.
The Q2Driving circuit include the pole down tube G driving circuit, down tube S pole driving circuit and be located at the pole down tube G drive
Lower capacitor C between dynamic circuit and the pole down tube S driving circuitL。
The pole the down tube G driving circuit includes the positive voltage source V of down tubeGS_L, two control G pole tension states first under
The pole pipe G switching tube S1_L, the second pole down tube G switching tube S2_LIt opened with down tube, turn off resistance Rgon_L、Rgoff_L, the down tube is just
Voltage source VGS_L, the first pole down tube G switching tube S1_L, down tube open resistance Rgon_L, down tube turn off resistance Rgoff_L, the second down tube G
Pole switching tube S2_LIt is sequentially connected in series in order.
The pole the down tube S driving circuit includes down tube negative supply VSS_LThe first of S pole tension state is controlled with two
The pole down tube S switching tube Sa1_L, the second pole down tube S switching tube Sa2_L；The down tube negative supply VSS_L, the first pole down tube S switch
Pipe Sa1_LWith the second pole down tube S switching tube Sa2_LIt is sequentially connected in series in order.
The lower capacitor CLOne end be connected to down tube open resistance Rgon_LResistance R is turned off with down tubegoff_LBetween the pole G
On driving circuit, the other end is connected to the first pole down tube S switching tube Sa1_LWith the second pole down tube S switching tube Sa2_LBetween the pole S drive
On dynamic circuit.
Embodiment 2
The present embodiment provides a kind of control methods of SiC power device drive circuit, by embodiment 1SiC power device
The a cycle of driving circuit is divided into t0~t1、t1~t2、t2~t3、t3~t4Four-stage, down tube Q2Actively to manage, upper tube Q1
Control logic when for passive pipe is as follows, and specific control logic is as shown in Figure 3.
t0~t1First stage: the second pole down tube G switching tube S2_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be 0V, be now in off state；Second pole upper tube G switching tube S2_HWith the first pole upper tube S switching tube
Sa1_HConducting, upper tube Q1Gate-source voltage be-Uss_H, to prevent down tube Q in second stage2The moment Q opened1Grid source electrode is just
It prepares to due to voltage spikes more than threshold voltage；
t1~t2Second stage: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be UGS_L, in t1Moment down tube Q2Conducting；Second pole upper tube G switching tube S2_HIt is switched with the first pole upper tube S
Pipe Sa1_HConducting, upper tube Q1Gate-source voltage be still-Uss_H, prevent down tube Q2The moment Q opened1The forward voltage point of grid source electrode
Peak is more than threshold voltage；
In down tube Q2Moment, upper tube Q is connected1Gate-source voltage rise rapidly, upper tube Q1Grid drain junction capacitance CGDHIt opens
Begin to charge, flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction electricity
Hold CGSHOn due to voltage spikes；
t2~t3Phase III: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube
Q2Gate-source voltage be still UGS_L, in the conductive state；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube
Sa2_HConducting, upper tube Q1Gate-source voltage be 0V, to prevent down tube Q in fourth stage2The moment Q of shutdown1The negative sense of grid source electrode
Due to voltage spikes is more than that negative sense safe voltage is prepared；
t3~t4Fourth stage: the second pole down tube G switching tube S2_LWith the first pole down tube S switching tube Sa1_LConducting, down tube
Q2Gate-source voltage be-Uss_L, to prevent upper tube Q in next stage1The moment Q opened2The forward voltage spike of grid source electrode is super
Threshold voltage is crossed to prepare；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube Sa2_HConducting, upper tube Q1Grid source
Pole tension is 0V, therefore in an off state；
In down tube Q2Shutdown moment, upper tube Q1Gate-source voltage decline rapidly, upper tube Q1Grid drain junction capacitance CGDHIt opens
Begin to discharge, flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction electricity
Hold CGSHOn due to voltage spikes.
As the supplement of above-mentioned control method, upper tube Q1Auxiliary capacitor CHExploitation method it is as follows:
CHVoltage variety Δ U1Expression formula are as follows:
Wherein, a is down tube Q2Switching speed；UDCFor input direct-current voltage value；RG1HFor upper tube Q1The equivalent electricity of gate pole
Resistance.
Effectively to inhibit cross-interference issue, gate-source voltage forward direction spike is no more than threshold voltage Uth, and grid source electrode need to be made electric
Negative sense spike is pressed to be no more than negative sense safe voltage UGS_MAX(-),
C is obtained according to above two formulaHValue range, choose Δ U1Change the corresponding C in gentle sectionHValue.CLTake
Value calculating method and CHIt is similar.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (10)
1. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk, including the pole G driving circuit, the pole S driving circuit and
The capacitor being located between the pole G driving circuit and the pole S driving circuit, which is characterized in that
The pole the G driving circuit includes positive voltage source VGS, two control G pole tension states the first pole G switching tube S1, second
The pole G switching tube S2With open, turn off resistance Rgon、Rgoff, the positive voltage source VGS, the first pole G switching tube S1, open resistance
Rgon, shutdown resistance Rgoff, the 2nd pole G switching tube S2It is sequentially connected in series in order；
The pole the S driving circuit includes negative supply VSSThe first pole S switching tube S of S pole tension state is controlled with twoa1,
Two pole S switching tube Sa2；The negative supply VSS, the first pole S switching tube Sa1With the 2nd pole S switching tube Sa2It successively goes here and there in order
Connection；
One end of the capacitor is connected to open resistance RgonWith shutdown resistance RgoffBetween the pole G driving circuit on, the other end connect
It connects in the first pole S switching tube Sa1With the 2nd pole S switching tube Sa2Between the pole S driving circuit on.
2. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 1, which is characterized in that
The bridge arm includes upper tube Q1With down tube Q2, upper tube Q1Connect Q1Driving circuit, down tube Q2Connect Q2Driving circuit；
The Q1Driving circuit includes the pole upper tube G driving circuit, upper tube S pole driving circuit and is located at the pole upper tube G driving circuit
With the upper capacitor C between the driving circuit of the pole upper tube SH；
The Q2Driving circuit includes the pole down tube G driving circuit, down tube S pole driving circuit and is located at the pole down tube G driving circuit
With the lower capacitor C between the driving circuit of the pole down tube SL。
3. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 2, which is characterized in that
The pole the upper tube G driving circuit includes the positive voltage source V of upper tubeGS_H, two control G pole tension states the first pole upper tube G open
Close pipe S1_H, the second pole upper tube G switching tube S2_HIt opened with upper tube, turn off resistance Rgon_H、Rgoff_H, the positive voltage source of the upper tube
VGS_H, the first pole upper tube G switching tube S1_H, upper tube open resistance Rgon_H, upper tube turn off resistance Rgoff_H, the second pole upper tube G switch
Pipe S2_HIt is sequentially connected in series in order.
4. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 3, which is characterized in that
The pole the upper tube S driving circuit includes upper tube negative supply VSS_HIt opens the first pole upper tube S for controlling S pole tension state with two
Close pipe Sa1_H, the second pole upper tube S switching tube Sa2_H；The upper tube negative supply VSS_H, the first pole upper tube S switching tube Sa1_HWith
Second pole upper tube S switching tube Sa2_HIt is sequentially connected in series in order.
5. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 4, which is characterized in that
The upper capacitor CHOne end be connected to open resistance Rgon_HWith shutdown resistance Rgoff_HBetween the pole G driving circuit on, the other end
It is connected to the first pole upper tube S switching tube Sa1_HWith the second pole upper tube S switching tube Sa2_HBetween the pole S driving circuit on.
6. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 5, which is characterized in that
The pole the down tube G driving circuit includes the positive voltage source V of down tubeGS_L, two control G pole tension states the first pole down tube G open
Close pipe S1_L, the second pole down tube G switching tube S2_LIt opened with down tube, turn off resistance Rgon_L、Rgoff_L, the positive voltage source of the down tube
VGS_L, the first pole down tube G switching tube S1_L, down tube open resistance Rgon_L, down tube turn off resistance Rgoff_L, the second pole down tube G switch
Pipe S2_LIt is sequentially connected in series in order.
7. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 6, which is characterized in that
The pole the down tube S driving circuit includes down tube negative supply VSS_LIt opens the first pole down tube S for controlling S pole tension state with two
Close pipe Sa1_L, the second pole down tube S switching tube Sa2_L；The down tube negative supply VSS_L, the first pole down tube S switching tube Sa1_LWith
Second pole down tube S switching tube Sa2_LIt is sequentially connected in series in order.
8. a kind of SiC power device drive circuit that can inhibit bridge arm crosstalk according to claim 7, which is characterized in that
The lower capacitor CLOne end be connected to down tube open resistance Rgon_LResistance R is turned off with down tubegoff_LBetween the pole G driving circuit
On, the other end is connected to the first pole down tube S switching tube Sa1_LWith the second pole down tube S switching tube Sa2_LBetween the pole S driving circuit
On.
9. the control method of SiC power device drive circuit described in claim 8, which is characterized in that drive SiC power device
The a cycle of circuit is divided into t0~t1、t1~t2、t2~t3、t3~t4Four-stage, down tube Q2Actively to manage, upper tube Q1For quilt
Control logic when dynamic pipe is as follows:
t0~t1First stage: the second pole down tube G switching tube S2_LWith the second pole down tube S switching tube Sa2_LConducting, down tube Q2Grid
Source voltage is 0V, is now in off state；Second pole upper tube G switching tube S2_HWith the first pole upper tube S switching tube Sa1_HIt leads
It is logical, upper tube Q1Gate-source voltage be-Uss_H, to prevent down tube Q in second stage2The moment Q opened1The forward direction electricity of grid source electrode
It prepares more than threshold voltage at pointing peak；
t1~t2Second stage: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube Q2Grid
Source voltage is UGS_L, in t1Moment down tube Q2Conducting；Second pole upper tube G switching tube S2_HWith the first pole upper tube S switching tube Sa1_H
Conducting, upper tube Q1Gate-source voltage be still-Uss_H, prevent down tube Q2The moment Q opened1The forward voltage spike of grid source electrode is super
Cross threshold voltage；
In down tube Q2Moment, upper tube Q is connected1Gate-source voltage rise rapidly, upper tube Q1Grid drain junction capacitance CGDHStart to fill
Electricity flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction capacitance
CGSHOn due to voltage spikes；
t2~t3Phase III: the first pole down tube G switching tube S1_LWith the second pole down tube S switching tube Sa2_LConducting, down tube Q2Grid
Source voltage is still UGS_L, in the conductive state；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube Sa2_HConducting,
Upper tube Q1Gate-source voltage be 0V, to prevent down tube Q in fourth stage2The moment Q of shutdown1The negative voltage spike of grid source electrode
It prepares more than negative sense safe voltage；
t3~t4Fourth stage: the second pole down tube G switching tube S2_LWith the first pole down tube S switching tube Sa1_LConducting, down tube Q2Grid
Source voltage is-Uss_L, to prevent upper tube Q in next stage1The moment Q opened2The forward voltage spike of grid source electrode is more than threshold value
Voltage is prepared；Second pole upper tube G switching tube S2_HWith the second pole upper tube S switching tube Sa2_HConducting, upper tube Q1Gate-source voltage
For 0V, thus it is in an off state；
In down tube Q2Shutdown moment, upper tube Q1Gate-source voltage decline rapidly, upper tube Q1Grid drain junction capacitance CGDHStart to put
Electricity flows through grid source junction capacitance C originallyGSHThe displacement current overwhelming majority by CHIt shunts, to reduce grid source junction capacitance
CGSHOn due to voltage spikes.
10. control method according to claim 9, which is characterized in that upper tube Q1Auxiliary capacitor CHExploitation method
It is as follows:
CHVoltage variety Δ U1Expression formula are as follows:
Wherein, a is down tube Q2Switching speed；UDCFor input direct-current voltage value；RG1HFor upper tube Q1Gate pole equivalent resistance；
Effectively to inhibit cross-interference issue, gate-source voltage forward direction spike is no more than threshold voltage Uth, and gate-source voltage need to be made negative
It is no more than negative sense safe voltage U to spikeGS_MAX(-),
C is obtained according to above two formulaHValue range, choose Δ U1Change the corresponding C in gentle sectionHValue.
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