CN210724728U - MOS tube driving circuit capable of being quickly turned off - Google Patents
MOS tube driving circuit capable of being quickly turned off Download PDFInfo
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- CN210724728U CN210724728U CN201922087753.1U CN201922087753U CN210724728U CN 210724728 U CN210724728 U CN 210724728U CN 201922087753 U CN201922087753 U CN 201922087753U CN 210724728 U CN210724728 U CN 210724728U
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- 230000005669 field effect Effects 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052744 lithium Inorganic materials 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Abstract
The utility model discloses a MOS tube driving circuit capable of being rapidly turned off, which comprises an MOS tube, a switching circuit, a first resistor and a third resistor; the output end of the driving signal is connected with the grid electrode of the MOS tube through a first resistor, the drain electrode of the MOS tube is connected with the input voltage, the first end of the switch circuit is used for receiving the driving signal, the second end of the switch circuit is connected with the grid electrode of the MOS tube, the third end of the switch circuit is connected with the source electrode of the MOS tube, and the third resistor is connected between the grid electrode and the source electrode of the MOS tube. The utility model discharges the grid of the cut-off MOS tube rapidly through the electronic switch, so that the grid is cut off rapidly, and the switching loss is reduced; in addition, the circuit is simple in structure, easy to implement, stable in performance, low in cost and capable of being widely applied to the technical field of lithium batteries.
Description
Technical Field
The utility model relates to a lithium cell technical field especially relates to a MOS pipe drive circuit that can turn-off fast.
Background
At present, an MOS tube driving circuit is used in most switching power supply circuit schemes, and an adjustable PWM waveform is output to a grid electrode of an MOS tube through a control chip to control the on-off time of the MOS tube so as to achieve the purpose of controlling output voltage. The existing MOS transistor driving circuit usually outputs a PWM waveform through an oscillation circuit or a control chip, and the PWM waveform passes through a current-limiting resistor to a gate of the MOS transistor, so as to implement on-off control of the MOS transistor. In the driving mode, due to the existence of the junction capacitance of the gate and the source of the MOS transistor, the MOS transistor cannot be quickly turned off, so that the efficiency is reduced, and the switching loss is increased. Although the dedicated driver chip can solve this problem, it is not suitable for low-cost products due to its high cost.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, the present invention provides a MOS transistor driving circuit for shortening the turn-off time of a MOS transistor.
The utility model adopts the technical proposal that:
a MOS tube driving circuit capable of being rapidly turned off comprises an MOS tube, a switching circuit, a first resistor and a third resistor;
the output end of the driving signal is connected with the grid electrode of the MOS tube through a first resistor, the drain electrode of the MOS tube is connected with the input voltage, the first end of the switch circuit is used for receiving the driving signal, the second end of the switch circuit is connected with the grid electrode of the MOS tube, the third end of the switch circuit is connected with the source electrode of the MOS tube, and the third resistor is connected between the grid electrode and the source electrode of the MOS tube.
Further, the switch circuit is a PNP type bipolar transistor or a P channel field effect transistor.
Further, the switch circuit further comprises a second resistor, and the second resistor is connected between the grid electrode of the MOS tube and the second end of the switch circuit.
Further, the second resistor is a small-resistance resistor.
The anode of the diode is connected with the third end of the switch circuit, and the cathode of the diode is connected with the source electrode of the MOS tube.
The utility model has the advantages that: the utility model discharges the grid of the cut-off MOS tube rapidly through the electronic switch, so that the grid is cut off rapidly, and the switching loss is reduced; in addition, the circuit is simple in structure, easy to implement, stable in performance and low in cost, and can be widely applied to the technical field of lithium batteries.
Drawings
FIG. 1 is an electronic circuit diagram of a first implementation of a fast turn-off MOS transistor driving circuit in an embodiment;
fig. 2 is an electronic circuit diagram of a second implementation manner of the MOS transistor driving circuit capable of fast turn-off in the specific embodiment.
Detailed Description
As shown in fig. 1, a fast turn-off MOS transistor Q1 driving circuit includes a MOS transistor Q1, a PNP bipolar transistor Q2, a first resistor R1, and a third resistor R3;
the output end of the driving signal is connected with the gate of the MOS transistor Q1 through a first resistor R1, the drain of the MOS transistor Q1 is connected with the input voltage, the first end of the PNP type bipolar transistor Q2 is used for receiving the driving signal, the second end of the PNP type bipolar transistor Q2 is connected with the gate of the MOS transistor Q1, the third end of the PNP type bipolar transistor Q2 is connected with the source of the MOS transistor Q1, and the third resistor R3 is connected between the gate and the source of the MOS transistor Q1.
The input driving signal is a square wave signal with adjustable duty ratio, and is used for controlling the on and off time of the MOS tube Q1, thereby controlling the output voltage. When the signal is at a high level, the driving signal passes through the first resistor R1 to the gate of the MOS transistor Q1, so that the MOS transistor Q1 is switched on, the resistor R1 plays a role in limiting current, and the charging peak current of the gate of the MOS transistor Q1 is reduced; the high driving signal is connected to the base of the PNP bipolar transistor Q2, and the PNP bipolar transistor Q2 is turned off. When the driving signal is at a low level, the PNP bipolar transistor Q2 is turned on, and both ends of the gate source of the MOS transistor Q1 form a discharge loop through the PNP bipolar transistor Q2, so that the charge of the gate-source junction capacitor of the MOS transistor Q1 is quickly discharged, thereby achieving the purpose of quickly turning off the MOS transistor Q1; meanwhile, the first resistor R1 and the third resistor R3 are also charge release paths, and the turn-off of the MOS transistor Q1 is accelerated. The MOS transistor Q1 is quickly turned off through the circuit, the switching loss is reduced, the efficiency is improved, and the circuit has the characteristics of simplicity, stability, easiness in implementation and low cost.
As shown in fig. 2, the present embodiment provides a device including a MOS transistor Q1, a P-channel field effect transistor Q2, a first resistor R1, and a third resistor R3;
the output end of the driving signal is connected with the grid electrode of a MOS tube Q1 through a first resistor R1, the drain electrode of the MOS tube Q1 is connected with the input voltage, the first end of the P-channel field effect transistor Q2 is used for receiving the driving signal, the second end of the P-channel field effect transistor Q2 is connected with the grid electrode of a MOS tube Q1, the third end of the P-channel field effect transistor Q2 is connected with the source electrode of a MOS tube Q1, and the third resistor R3 is connected between the grid electrode and the source electrode of a MOS tube Q1.
When the signal is at high level, the MOS transistor Q1 is turned on, and the P-channel fet Q2 is turned off. When the signal is changed into low level, the P-channel field effect transistor Q2 is switched on, and the charge of the gate-source junction capacitor of the MOS transistor Q1 is quickly discharged, so that the purpose of quickly switching off the MOS transistor Q1 is achieved; meanwhile, the first resistor R1 and the third resistor R3 are also charge release paths, and the turn-off of the MOS transistor Q1 is accelerated. The MOS transistor Q1 is quickly turned off through the circuit, the switching loss is reduced, the efficiency is improved, and the circuit has the characteristics of simplicity, stability, easiness in implementation and low cost.
Referring to fig. 1, further as a preferred embodiment, the switching circuit further includes a second resistor R2, where the second resistor R2 is connected between the gate of the MOS transistor Q1 and the second end of the switching circuit; the second resistor is a small-resistance resistor.
The second resistor R2 is a resistor with a small resistance value, so that the PNP bipolar transistor or the P-channel field effect transistor is prevented from being damaged by large instantaneous current, a certain protection effect on a switching circuit can be achieved, the damage is prevented, and the service life of the triode or the field effect transistor is prolonged.
Referring to fig. 1, further as a preferred embodiment, the switch circuit further includes a diode D1, the anode of the diode D1 is connected to the third terminal of the switch circuit, and the cathode of the diode D1 is connected to the source of the MOS transistor Q1.
The diode D1 plays a role in circuit protection in order to prevent the electronic switch from being damaged by the output voltage spike in the switching power supply circuit.
To sum up, the utility model discloses following beneficial effect has at least:
(1) when the MOS tube is turned off, a PNP type bipolar transistor or a P channel field effect transistor is used or the grid electrode is rapidly discharged, so that the MOS tube is rapidly turned off, and the switching loss is reduced.
(2) The second resistor can play a certain protection role on the triode, prevent damage and prolong the service life of the triode or the field effect transistor.
(3) The output voltage peak in the switching power supply circuit can be prevented from damaging the PNP type bipolar transistor or the P channel field effect transistor through the diode.
(4) The circuit of the embodiment is simple and easy to realize, has stable performance and low cost, and can be widely applied to the technical field of lithium batteries.
While the preferred embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and such equivalent modifications or substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (5)
1. A MOS tube driving circuit capable of being rapidly turned off is characterized by comprising an MOS tube, a switching circuit, a first resistor and a third resistor;
the output end of the driving signal is connected with the grid electrode of the MOS tube through a first resistor, the drain electrode of the MOS tube is connected with the input voltage, the first end of the switch circuit is used for receiving the driving signal, the second end of the switch circuit is connected with the grid electrode of the MOS tube, the third end of the switch circuit is connected with the source electrode of the MOS tube, and the third resistor is connected between the grid electrode and the source electrode of the MOS tube.
2. The MOS transistor driving circuit as claimed in claim 1, wherein the switch circuit is a PNP type bipolar transistor or a P-channel field effect transistor.
3. The MOS tube driving circuit capable of being turned off rapidly according to claim 1, further comprising a second resistor connected between the gate of the MOS tube and the second end of the switch circuit.
4. A MOS transistor driving circuit as claimed in claim 3, wherein the second resistor is a small resistance resistor.
5. The MOS tube driving circuit capable of being turned off rapidly according to claim 1, further comprising a diode, wherein an anode of the diode is connected to the third terminal of the switching circuit, and a cathode of the diode is connected to the source of the MOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922087753.1U CN210724728U (en) | 2019-11-27 | 2019-11-27 | MOS tube driving circuit capable of being quickly turned off |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922087753.1U CN210724728U (en) | 2019-11-27 | 2019-11-27 | MOS tube driving circuit capable of being quickly turned off |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210724728U true CN210724728U (en) | 2020-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922087753.1U Expired - Fee Related CN210724728U (en) | 2019-11-27 | 2019-11-27 | MOS tube driving circuit capable of being quickly turned off |
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| Country | Link |
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| CN (1) | CN210724728U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022048293A1 (en) * | 2020-09-04 | 2022-03-10 | 欣旺达电动汽车电池有限公司 | Soft turn-off active clamp protection circuit and power system |
| WO2022121324A1 (en) * | 2020-12-07 | 2022-06-16 | 珠海格力电器股份有限公司 | Igbt driving circuit and power conversion device |
-
2019
- 2019-11-27 CN CN201922087753.1U patent/CN210724728U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022048293A1 (en) * | 2020-09-04 | 2022-03-10 | 欣旺达电动汽车电池有限公司 | Soft turn-off active clamp protection circuit and power system |
| WO2022121324A1 (en) * | 2020-12-07 | 2022-06-16 | 珠海格力电器股份有限公司 | Igbt driving circuit and power conversion device |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200609 |