CN204031110U - Electronic DC switch and electronic equipment - Google Patents
Electronic DC switch and electronic equipment Download PDFInfo
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- CN204031110U CN204031110U CN201420385548.8U CN201420385548U CN204031110U CN 204031110 U CN204031110 U CN 204031110U CN 201420385548 U CN201420385548 U CN 201420385548U CN 204031110 U CN204031110 U CN 204031110U
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Abstract
A kind of electronic DC switch and electronic equipment, comprise a nMOSFET, the drain electrode of this nMOSFET, source electrode are respectively as the input of this electronic DC switch and output, also comprise: drive circuit, export the drive circuit of On current during reception starting-up signal at output, during reception off signal, this output stops exporting this On current; Delay circuit, receives described On current to export the grid of high level to described nMOSFET after time delay of charging, makes described nMOSFET conducting; Discharge circuit, when the output of described drive circuit stops exporting this On current, the grid voltage of described nMOSFET drags down after discharging to described delay circuit by this discharge circuit, and described nMOSFET is closed.Switch is opened after charging time delay being carried out to delay circuit by drive circuit during start, electricity in delay circuit is discharged by discharge circuit when shutting down, each circuit is all form with simple discrete component, and to realize the control of switching sequence, the cost of electronic DC switch is low.
Description
Technical field
The utility model relates to electronic switching technology, particularly relates to a kind of electronic DC switch and electronic equipment.
Background technology
Current electronic DC switch circuit can adopt integrated circuit to control, driven MOS FET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide half field effect transistor) Q1 realizes (as shown in Figure 1), and integrated circuit driven MOS FET Q1 can not also be adopted to realize (as shown in Figure 2).
MOSFET is usually used as the executive component of switch, and its control, driving, protective circuit all will have been come by the logic of a set of complexity, sequential integrated circuit, bring cost high like this, and not easily adjust the problem of time sequence parameter.
Switching sequence figure with reference to figure 3, MOSFET Q1:
Period T1: start signal arrives, Q1 start the time entering conducting.
Period T2:Q1 starts to enter the time (being commonly called as rising edge) being conducting to Q1 saturation conduction.
Period T3:Q1 receives the time (being commonly called as trailing edge) that cut-off signals turns off completely to Q1.
Traditional electronic DC switch circuit driven without integrated circuit, does not mostly all have sequencing control, does not have short-circuit protection function yet.When output short-circuit, switch element MOSFET, will bear huge electric current and make it damage, as shown in Figure 4, and output current change curve when curve A is output short-circuit.The reason that switch element MOSFET damages be its when output short-circuit, turn off rapid not, cause energy too high, raceway groove melts down.
Utility model content
Based on this, be necessary to provide a kind of simple, electronic DC switch with sequencing control.
A kind of electronic DC switch, comprises a nMOSFET, and the drain electrode of this nMOSFET, source electrode are respectively as the input of this electronic DC switch and output, and described electronic DC switch also comprises:
Drive circuit, exports the drive circuit of On current at output during reception starting-up signal, during reception off signal, this output stops exporting this On current;
Delay circuit, input is connected with the output of described drive circuit, and output is connected with the grid of described nMOSFET, receives described On current to export the grid of high level to described nMOSFET after time delay of charging, makes described nMOSFET conducting;
Discharge circuit, when the output of described drive circuit stops exporting this On current, the grid voltage of described nMOSFET drags down after discharging to described delay circuit by this discharge circuit, and described nMOSFET is closed.
In one embodiment, described delay circuit comprises the first diode, the first resistance, the second resistance, the first electric capacity and the 3rd resistance, wherein:
The anode of described first diode is connected with the output of described drive circuit, negative electrode connects the first end of described first resistance, the first end of the first electric capacity and the second resistance described in second termination of described first resistance, the source electrode of nMOSFET described in the second termination of described first electric capacity through described 3rd grounding through resistance, the grid of nMOSFET described in the second termination of described second resistance.
In one embodiment, described discharge circuit comprises the first triode, the 4th resistance, the second diode, the 5th resistance and the 6th resistance, wherein:
Described first triode is PNP triode, the output of its emitter and described drive circuit, the negative electrode of the second diode, the first end of the 4th resistance are connected, collector electrode is connected with the second end of the second end of described 4th resistance, described first electric capacity, the first end of the 5th resistance, base stage connects the second end of described 5th resistance and by described 3rd grounding through resistance, the anode of described second diode connects the grid of described nMOSFET through described 6th resistance.
In one embodiment, described delay circuit also comprises the 3rd diode and the 7th resistance, the anode of described 3rd diode is connected with the first end of described 7th resistance, described first resistance and described 3rd diodes in parallel, the negative electrode of described 3rd diode connects described first diode cathode, the first end of the first electric capacity described in the second termination of described 7th resistance.
In one embodiment, described drive circuit comprises the 8th resistance, the 9th resistance and the second triode, described second triode is PNP triode, its base stage connects described starting-up signal, off signal by described 8th resistance, emitter connects power supply and connects its base stage by described 9th resistance, and collector electrode is as the output of drive circuit.
In addition, additionally provide a kind of electronic equipment, comprise above-mentioned electronic DC switch.
Electronic DC switch in above-mentioned electronic equipment opens switch after carrying out charging time delay by drive circuit to delay circuit when starting shooting, electricity in delay circuit is discharged by discharge circuit when shutting down, each circuit is all form with simple discrete component, be convenient to adjustment charging, electric discharge duration, namely can realize the control of switching sequence, the cost of electronic DC switch is low.
Accompanying drawing explanation
Fig. 1 is the electronic DC switch of traditional employing integrated circuit;
Fig. 2 is traditional electronic DC switch without employing integrated circuit;
Fig. 3 is the switching sequence curve chart of MOSFET;
Current curve diagram when Fig. 4 to be MOSFET be normal work and short circuiting work;
Fig. 5 is the schematic diagram of electronic DC switch in the utility model preferred embodiment.
Embodiment
In order to make the technical problems to be solved in the utility model, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Refer to Fig. 5, in the utility model preferred embodiment, electronic DC switch comprises a nMOSFET Q1 (N-channel MOS FET), drive circuit 201, delay circuit 202 and discharge circuit 203, and the drain electrode of this nMOSFET Q1, source electrode are respectively as the input input of this electronic DC switch and output output.Export the drive circuit 201 of On current when drive circuit 201 receives starting-up signal at output, when receiving off signal off, this output stops exporting this On current.The input of delay circuit 202 is connected with the output of drive circuit 201, and output is connected with the grid of nMOSFET Q1 and receives On current to export the grid of high level to nMOSFET Q1 after time delay of charging, and makes nMOSFET Q1 conducting; Receive off signal off, when the output of drive circuit 201 stops exporting this On current, after this discharge circuit 203 pairs of delay circuits 202 discharge, the grid voltage of nMOSFET Q1 is dragged down, nMOSFET Q1 is closed.
In one embodiment, delay circuit 202 comprises the first diode D1, the first resistance R1, the second resistance R2, the first electric capacity C1 and the 3rd resistance R3.
The anode of the first diode D1 is connected with the output of drive circuit 201, the negative electrode of the first diode D1 connects the first end of the first resistance R1, the second termination first electric capacity C1 of the first resistance R1 and the first end of the second resistance R2, the source electrode of the second termination nMOSFET Q1 of the first electric capacity C1 through the 3rd resistance R3 ground connection, the grid of the second termination nMOSFET Q1 of the second resistance R2.
Further, delay circuit 202 also comprises the 3rd diode D3 and the 7th resistance R7, the anode of the 3rd diode D3 is connected with the first end of the 7th resistance R7, first resistance R1 is in parallel with the 3rd diode D3, the negative electrode of the 3rd diode D3 connects the first diode D1 negative electrode, the first end of the second termination first electric capacity C1 of the 7th resistance R7.
Incorporated by reference to Fig. 3, regulate the first resistance R1, the first electric capacity C1 and the 7th resistance R7 can adjust the rising edge period T2 of nMOSFET Q1, export the time of rising edge by (R
1+ R
7) * C
1time constant determine, R
1, R
7, C
1be respectively the device parameters of the first resistance R1, the 7th resistance R7, the first electric capacity C1.
In one embodiment, discharge circuit 203 comprises the first triode Q2, the 4th resistance R4, the second diode D2, the 5th resistance R5 and the 6th resistance R6.
First triode Q2 is PNP triode, the emitter of the first triode Q2 is connected with the negative electrode of the output of drive circuit 201, the second diode D2, the first end of the 4th resistance R4, the collector electrode of the first triode Q2 is connected with second end of second end of the 4th resistance R4, the first electric capacity C1, the first end of the 5th resistance R5, the base stage of the first triode Q2 connects second end of the 5th resistance R5 and by the 3rd resistance R3 ground connection, the anode of the second diode D2 connects the grid of nMOSFET Q1 through the 6th resistance R6.
In one embodiment, drive circuit 201 comprises the 8th resistance R8, the 9th resistance R9 and the second triode Q3, second triode Q3 is PNP triode, the base stage of the second triode Q3 meets starting-up signal on, off signal off by the 8th resistance R8, the emitter of the second triode Q3 meets power supply VCC2 and connects its base stage by the 9th resistance R9, and the collector electrode of the second triode Q3 is as the output of drive circuit 201.
Composition graphs 3,4,5, illustrates the circuit theory of electronic DC switch:
When starting-up signal on occurs, make the second triode Q3 open-minded through the 8th resistance R8, On current through the first diode D1, the first resistance R1, the 7th resistance R7, the first electric capacity C1 time delay, then through the second resistance R2 driving switch executive component nMOSFET Q1, makes its saturation conduction.
When off signal off occurs, through the 8th resistance R8, the second triode Q3 is turned off, after 3rd resistance R3 discharges the electric energy on the first electric capacity, make the first triode Q2 conducting, by the 6th resistance R1, the second diode D1, the first triode Q2, the grid voltage of switch executing element nMOSFET Q1 is dragged down, nMOSFET Q1 is turned off.
The utility model scheme realizes output short circuit protection function, when output short-circuit, can send rapidly off signal off, switch executing element nMOSFET Q1 is turned off rapidly, and its turn-off time T3 is determined by the junction capacitance of the 6th resistance R6 and nMOSFET Q1.The turn-off time T3 time is shorter, then the short circuit current that bears of nMOSFET Q1 is less, and the time is shorter, can adjust turn-off time T3 by the numerical value adjusting the 6th resistance R6, thus reduces the current stress of nMOSFET Q1.B curve as shown in Figure 4.
In addition, additionally provide a kind of electronic equipment, comprise above-mentioned electronic DC switch.
The above embodiment only have expressed several execution mode of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (6)
1. an electronic DC switch, comprises a nMOSFET, and the drain electrode of this nMOSFET, source electrode are respectively as the input of this electronic DC switch and output, and it is characterized in that, described electronic DC switch also comprises:
Drive circuit, exports the drive circuit of On current at output during reception starting-up signal, during reception off signal, this output stops exporting this On current;
Delay circuit, input is connected with the output of described drive circuit, and output is connected with the grid of described nMOSFET, receives described On current to export the grid of high level to described nMOSFET after time delay of charging, makes described nMOSFET conducting;
Discharge circuit, when the output of described drive circuit stops exporting this On current, the grid voltage of described nMOSFET drags down after discharging to described delay circuit by this discharge circuit, and described nMOSFET is closed.
2. electronic DC switch according to claim 1, is characterized in that, described delay circuit comprises the first diode, the first resistance, the second resistance, the first electric capacity and the 3rd resistance, wherein:
The anode of described first diode is connected with the output of described drive circuit, negative electrode connects the first end of described first resistance, the first end of the first electric capacity and the second resistance described in second termination of described first resistance, the source electrode of nMOSFET described in the second termination of described first electric capacity through described 3rd grounding through resistance, the grid of nMOSFET described in the second termination of described second resistance.
3. electronic DC switch according to claim 2, is characterized in that, described discharge circuit comprises the first triode, the 4th resistance, the second diode, the 5th resistance and the 6th resistance, wherein:
Described first triode is PNP triode, the output of its emitter and described drive circuit, the negative electrode of the second diode, the first end of the 4th resistance are connected, collector electrode is connected with the second end of the second end of described 4th resistance, described first electric capacity, the first end of the 5th resistance, base stage connects the second end of described 5th resistance and by described 3rd grounding through resistance, the anode of described second diode connects the grid of described nMOSFET through described 6th resistance.
4. the electronic DC switch according to Claims 2 or 3, it is characterized in that, described delay circuit also comprises the 3rd diode and the 7th resistance, the anode of described 3rd diode is connected with the first end of described 7th resistance, described first resistance and described 3rd diodes in parallel, the negative electrode of described 3rd diode connects described first diode cathode, the first end of the first electric capacity described in the second termination of described 7th resistance.
5. the electronic DC switch according to any one of claims 1 to 3, it is characterized in that, described drive circuit comprises the 8th resistance, the 9th resistance and the second triode, described second triode is PNP triode, its base stage connects described starting-up signal, off signal by described 8th resistance, emitter connects power supply and connects its base stage by described 9th resistance, and collector electrode is as the output of drive circuit.
6. an electronic equipment, is characterized in that, comprises the electronic DC switch described in any one of claim 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420385548.8U CN204031110U (en) | 2014-07-11 | 2014-07-11 | Electronic DC switch and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420385548.8U CN204031110U (en) | 2014-07-11 | 2014-07-11 | Electronic DC switch and electronic equipment |
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| CN204031110U true CN204031110U (en) | 2014-12-17 |
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| CN201420385548.8U Active CN204031110U (en) | 2014-07-11 | 2014-07-11 | Electronic DC switch and electronic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901689A (en) * | 2019-01-29 | 2019-06-18 | 珠海市杰理科技股份有限公司 | Hardware switch circuit |
| CN117081366A (en) * | 2023-10-13 | 2023-11-17 | 深圳莱福德科技股份有限公司 | Lighting drive start-up delay circuit |
-
2014
- 2014-07-11 CN CN201420385548.8U patent/CN204031110U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901689A (en) * | 2019-01-29 | 2019-06-18 | 珠海市杰理科技股份有限公司 | Hardware switch circuit |
| CN109901689B (en) * | 2019-01-29 | 2021-10-12 | 珠海市杰理科技股份有限公司 | Hardware switch circuit |
| CN117081366A (en) * | 2023-10-13 | 2023-11-17 | 深圳莱福德科技股份有限公司 | Lighting drive start-up delay circuit |
| CN117081366B (en) * | 2023-10-13 | 2024-02-23 | 深圳莱福德科技股份有限公司 | Lighting drive start-up delay circuit |
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