CN206332608U - A kind of IGBT resistances adjusted circuit - Google Patents
A kind of IGBT resistances adjusted circuit Download PDFInfo
- Publication number
- CN206332608U CN206332608U CN201720029174.XU CN201720029174U CN206332608U CN 206332608 U CN206332608 U CN 206332608U CN 201720029174 U CN201720029174 U CN 201720029174U CN 206332608 U CN206332608 U CN 206332608U
- Authority
- CN
- China
- Prior art keywords
- igbt
- diode
- fet
- drive circuit
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electronic Switches (AREA)
Abstract
The utility model discloses a kind of IGBT resistances adjusted circuit, including IGBT drive circuit, first resistor, second resistance, the first diode, the second diode, FET, IGBT；The first resistor is IGBT resistances；The FET is that N-channel is enhanced；The IGBT drive circuit is via positive and negative electrode terminals outputting drive voltage, and driving voltage is is used for opening IGBT, and driving voltage is used to turn off IGBT to bear；The positive pole of IGBT drive circuit is connected with the source electrode of one end of first resistor and FET；The negative pole of IGBT drive circuit is connected with the negative electrode of IGBT emitter stage, one end of second resistance and the second diode；The grid of FET is connected with the anode of the other end of second resistance and the second diode；The other end of first resistor is connected with the anode of IGBT grid and the first diode；The drain electrode of FET is connected with the negative electrode of the first diode.Compared with prior art, advantage is that IGBT off state will not be influenceed by frequency voltage components between collector emitter to the utility model.
Description
Technical field
The utility model is related to switch power technology, is connected between specifically related to a kind of IGBT drive circuit and IGBT grids
Resistance-variable circuit, IGBT is to refer to insulated gate bipolar transistor.
Technical background
IGBT is widely used in all kinds of Switching Power Supplies, and one will be generally sealed between IGBT drive circuit and IGBT grids
Individual resistance is resistance to adjust IGBT switching characteristic, and Rg as shown in Figure 1 is exactly resistance, but this resistance presence not
Beneficial to IGBT reliable turn-off：When IGBT drive circuit output negative pressure makes IGBT grid voltages less than transmitting via resistance
During pole tension, IGBT should be between off state, but the collector and emitter of the voltage that now IGBT is born, i.e. IGBT
Voltage it is general and unstable, usually contain high fdrequency component, due to Miller effect, high frequency voltage therein can be delivered to IGBT
Grid, and because resistance to the output of IGBT drive circuit has certain buffer action so that IGBT grids and emitter stage
Between voltage be possible to be become just, so as to cause IGBT to be changed into open-minded from turning off by negative.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art there is provided a kind of ball bearing made after IGBT is turned off
By resistance short circuit, so as to avoid resistance from hindering shut-off of the drive circuit to IGBT to act on.
To achieve these goals, the technical scheme of the utility model offer is：A kind of IGBT resistances adjusted circuit,
Including IGBT drive circuit, first resistor, second resistance, the first diode, the second diode, FET, IGBT；Described
One resistance is IGBT resistances；The FET is that N-channel is enhanced；The IGBT drive circuit connects via positive and negative electrode
Line end (following positive and negative electrode terminals are also briefly referred to as positive pole, negative pole) outputting drive voltage, driving voltage is just (i.e. positive pole
Current potential is higher than negative pole current potential) it is used to open IGBT, driving voltage is used to turn off for negative (i.e. anodic potentials are less than negative pole current potential)
IGBT；The positive pole of IGBT drive circuit is connected with the source electrode of one end of first resistor and FET；IGBT drive circuit it is negative
Pole is connected with the negative electrode of IGBT emitter stage, one end of second resistance and the second diode；The grid of FET and the second electricity
The anode of the other end of resistance and the second diode is connected；The sun of the other end of first resistor and IGBT grid and the first diode
Extremely it is connected；The drain electrode of FET is connected with the negative electrode of the first diode.
Compared with prior art, advantage is that drive circuit output negative pressure is turned off after IGBT to the utility model, resistance quilt
Short circuit, thus eliminate Miller effect so that IGBT off state will not be by colelctor electrode-transmitting interpolar frequency voltage components
Influence.
Brief description of the drawings
Fig. 1 is the common technology schematic diagram of series resistance between IGBT grids and drive circuit.
Fig. 2 is a kind of IGBT resistances adjusted circuit schematic diagram described in the utility model.
Embodiment
With reference to specific embodiment, the utility model is described in further detail.
As shown in Fig. 2 a kind of IGBT resistances adjusted circuit described in the utility model embodiment, including IGBT drivings
Circuit, first resistor Rg, second resistance R, the first diode D1, the second diode D2, FET Q and IGBT；First resistor
Rg is IGBT resistances；FET Q is that N-channel is enhanced；IGBT drive circuit is exported via positive pole and negative terminals
Driving voltage；The positive pole of IGBT drive circuit is connected with first resistor Rg one end and FET Q source electrode；IGBT driving electricity
The negative pole on road is connected with the negative electrode of IGBT emitter stage, second resistance R one end and the second diode D2；The grid of FET
It is connected with the second resistance R2 other end and the second diode D2 anode；The first resistor Rg other end and IGBT grid and
First diode D1 anode is connected；FET Q drain electrode is connected with the first diode D1 negative electrode.
The operation principle of the present embodiment foregoing circuit is as follows：When IGBT drive circuit exports positive voltage, i.e. its anodic potentials
During higher than negative pole current potential, this positive voltage is added between IGBT grid and emitter stage via first resistor Rg, so that IGBT is opened,
First diode D1 prevents this positive voltage to be added to IGBT grid via FET Q, while this positive voltage is via the second electricity
Resistance R and the second diode D2 parallel circuit is added between FET Q source electrode and grid, i.e., be negative between grid and source electrode
Voltage, ends FET Q, and due to the second diode D2 forward conductions, therefore FET Q can be made to enter cut-off shape rapidly
State, so as to ensure that FET Q when IGBT is opened always is off；When IGBT drive circuit exports negative voltage, i.e. its positive pole electricity
When position is less than negative pole current potential, this negative voltage is added between IGBT grid and emitter stage via first resistor Rg, so as to turn off
IGBT, at the same this negative voltage make the second diode D2 end, so negative voltage can only via second resistance R to FET Q grid-
Source capacitance charges, just can be by cutting when FET Q will be that gate source voltage reaches unlatching threshold value when the voltage on this electric capacity
Only it is changed into conducting, the selection principle of second resistance R resistances is as early as possible to turn on FET Q after IGBT shut-offs, so that
IGBT grid can be added to via FET Q and the first diode D1 series arm by obtaining the negative voltage of IGBT drive circuit output
Between pole and emitter stage, because the conducting resistance of this branch road will be much smaller than IGBT resistance Rg, electricity is driven equivalent to by IGBT
The negative voltage of road output is applied directly between IGBT grid and emitter stage, therefore can be reduced or even be eliminated IGBT colelctor electrodes and transmitting
Voltage high frequency component improves IGBT shut-off reliability to the Miller effect of IGBT grids and transmitting voltage across poles between pole；Make
For FET Q and the first diode D1, the small element of conducting resistance should be selected；The positive voltage of IGBT drive circuit output is general
About 15 volts, negative voltage is typically between -5~-15 volts.
Embodiment described above is only the utility model preferred embodiment, not limits implementation model of the present utility model with this
Enclose, therefore the change that all shapes according to the utility model, principle are made, it all should cover in protection domain of the present utility model.
Claims (2)
1. a kind of IGBT resistances adjusted circuit, it is characterised in that：Including IGBT drive circuit, first resistor (Rg), second
Resistance (R), the first diode (D1), the second diode (D2), FET (Q) and IGBT；The first resistor (Rg) is
IGBT resistances；The FET (Q) is that N-channel is enhanced；The IGBT drive circuit is via positive pole and negative terminal
Hold outputting drive voltage；The positive pole of the IGBT drive circuit and one end of first resistor (Rg) and the source electrode of FET (Q)
It is connected；The negative electrode of the negative pole of IGBT drive circuit and IGBT emitter stage, one end of second resistance (R) and the second diode (D2)
It is connected；The grid of FET is connected with the other end of second resistance (R2) and the anode of the second diode (D2)；First resistor
(Rg) the other end is connected with IGBT grid and the anode of the first diode (D1)；The drain electrode and the one or two of FET (Q)
The negative electrode of pole pipe (D1) is connected.
2. a kind of IGBT resistances adjusted circuit according to claim 1, it is characterised in that：The IGBT drive circuit
When exporting positive voltage, make IGBT open-minded, IGBT is turned off during output negative voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720029174.XU CN206332608U (en) | 2017-01-10 | 2017-01-10 | A kind of IGBT resistances adjusted circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720029174.XU CN206332608U (en) | 2017-01-10 | 2017-01-10 | A kind of IGBT resistances adjusted circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206332608U true CN206332608U (en) | 2017-07-14 |
Family
ID=59294445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720029174.XU Expired - Fee Related CN206332608U (en) | 2017-01-10 | 2017-01-10 | A kind of IGBT resistances adjusted circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206332608U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107070186A (en) * | 2017-01-10 | 2017-08-18 | 佛山信开益科技有限公司 | A kind of IGBT resistances adjusted circuit |
-
2017
- 2017-01-10 CN CN201720029174.XU patent/CN206332608U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107070186A (en) * | 2017-01-10 | 2017-08-18 | 佛山信开益科技有限公司 | A kind of IGBT resistances adjusted circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI599156B (en) | Drive transformer isolation adaptive drive circuit | |
| CN108768367A (en) | SiC MOSFET driving circuits based on gate boost | |
| CN204131481U (en) | The low-loss high speed push-pull driver circuit of low cost | |
| CN101674001B (en) | Bridge driving circuit with blind area control | |
| CN209232796U (en) | A kind of splitting bar IGBT structure | |
| CN206332608U (en) | A kind of IGBT resistances adjusted circuit | |
| CN107070186A (en) | A kind of IGBT resistances adjusted circuit | |
| CN111555596B (en) | SiC MOSFET grid crosstalk suppression driving circuit with adjustable negative pressure | |
| CN210724728U (en) | MOS tube driving circuit capable of being quickly turned off | |
| CN209545536U (en) | Solid state power amplifier voltage sequential protection circuit in a kind of solid-state radar | |
| CN104811174A (en) | Power switch tube driving circuit capable of regulating switching speed of power switch tube | |
| CN204349946U (en) | P-MOSFET drive circuit | |
| CN214001803U (en) | Reverse connection prevention protection circuit of electric power steering system | |
| CN204031110U (en) | Electronic DC switch and electronic equipment | |
| CN202121561U (en) | Novel MOS transistor drive circuit for switching power supply | |
| CN208369548U (en) | A kind of IGBT Drive Protecting Circuit | |
| CN211880153U (en) | Voltage bootstrap chip, weak light acquisition circuit and equipment | |
| CN207719799U (en) | A kind of electric motor of automobile circuit for preventing reverse connection of power supply | |
| CN111600462A (en) | Synchronous rectification MOSFET drive control circuit | |
| CN210110647U (en) | Direct current relay control circuit | |
| CN203800836U (en) | CS short circuit protection circuit for switch power supply | |
| CN206759407U (en) | Switch driving circuit | |
| CN111725978A (en) | SiC MOSFET gate drive circuit with negative voltage turn-off and crosstalk suppression functions | |
| CN104731728B (en) | A kind of drive circuit based on microprocessor I/O mouths | |
| CN215378754U (en) | Rectification pre-charging control circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170714 Termination date: 20200110 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |