CN111600462A - Synchronous rectification MOSFET drive control circuit - Google Patents
Synchronous rectification MOSFET drive control circuit Download PDFInfo
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- CN111600462A CN111600462A CN202010468499.4A CN202010468499A CN111600462A CN 111600462 A CN111600462 A CN 111600462A CN 202010468499 A CN202010468499 A CN 202010468499A CN 111600462 A CN111600462 A CN 111600462A
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 19
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Engineering & Computer Science (AREA)
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Abstract
The invention provides a synchronous rectification MOSFET drive control circuit which comprises a control unit and an MOS tube Q2, wherein the control unit comprises a signal acquisition and amplification circuit, a resistance-capacitance voltage division filter circuit and a drive circuit, the output end of the signal acquisition and amplification circuit is connected with the input end of the resistance-capacitance voltage division filter circuit, the output end of the resistance-capacitance voltage division filter circuit is connected with the input end of the drive circuit, and the output end of the drive circuit is connected with the grid electrode of the MOS tube Q2. The invention has the beneficial effects that: the on and off speed of the MOSFET is improved, and the on delay time is reduced; the drive voltage of the MOSFET is improved, the conduction loss is reduced, and the circuit efficiency is improved.
Description
Technical Field
The present invention relates to a driving control circuit, and more particularly, to a synchronous rectification MOSFET driving control circuit.
Background
The existing MOSFET driving control circuit drives the MOSFET to have slower on-off speed.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a synchronous rectification MOSFET driving control circuit.
The invention provides a synchronous rectification MOSFET drive control circuit which comprises a control unit and an MOS tube Q2, wherein the control unit comprises a signal acquisition and amplification circuit, a resistance-capacitance voltage division filter circuit and a drive circuit, the output end of the signal acquisition and amplification circuit is connected with the input end of the resistance-capacitance voltage division filter circuit, the output end of the resistance-capacitance voltage division filter circuit is connected with the input end of the drive circuit, and the output end of the drive circuit is connected with the grid electrode of the MOS tube Q2.
As a further improvement of the present invention, the driving circuit includes a MOSFET driving integrated chip U1, a resistor R4, a resistor R5, and a resistor R6, an OUTH pin of the MOSFET driving integrated chip U1 is connected to one end of the resistor R4, the other end of the resistor R4 is connected to a gate of the MOS transistor Q2, an OUTL pin of the MOSFET driving integrated chip U1 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to a gate of the MOS transistor Q2, one end of the resistor R6 is connected to a gate of the MOS transistor Q2, the other end of the resistor R6 is connected to a source of the MOS transistor Q2, a source of the MOS transistor Q2 is connected to an internal voltage V _ IN, and a drain of the MOS transistor Q2 is connected to an external voltage V _ OUT.
As a further improvement of the present invention, the signal collecting and amplifying circuit includes a diode D1A, a diode D1B, a triode Q1A, and a triode Q1B, wherein a collector of the triode Q1A is connected to a resistor R4 and then connected to a supply voltage VCC, a base of the triode Q1A is connected to a base of the triode Q1B, an emitter of the triode Q1A is connected to an anode of the diode D1A, a cathode of the diode D1A is connected to an external voltage V _ OUT, a collector of the triode Q1B is connected to the supply voltage VCC, an emitter of the triode Q1B is connected to an anode of the diode D1B, and a cathode of the diode D1B is connected to an internal voltage V _ IN.
As a further improvement of the present invention, the parameters of the diode D1A and the diode D1B are the same, and the parameters of the transistor Q1A and the transistor Q1B are the same.
As a further improvement of the present invention, the rc voltage-dividing filter circuit includes a resistor R1, a resistor R2, a resistor R3, and a capacitor C1, one end of the resistor R1 is connected to a supply voltage VCC, the other end of the resistor R1 is connected to a collector of the transistor Q1B, one end of the resistor R2 is connected between the resistor R1 and the collector of the transistor Q1B, the other end of the resistor R2 is respectively connected to one end of the resistor R3, one end of the capacitor C1, and an IN pin of the MOSFET driving integrated chip U1, the other end of the resistor R3 is connected to an internal voltage V _ IN, and the other end of the capacitor C1 is connected to the internal voltage V _ IN.
The invention has the beneficial effects that: by the scheme, the on-off speed of the MOSFET is improved, and the on-off delay time is reduced; the drive voltage of the MOSFET is improved, the conduction loss is reduced, and the circuit efficiency is improved.
Drawings
Fig. 1 is a circuit diagram of a synchronous rectification MOSFET drive control circuit of the present invention.
Detailed Description
The invention is further described with reference to the following description and embodiments in conjunction with the accompanying drawings.
As shown in fig. 1, a synchronous rectification MOSFET driving control circuit includes a control unit and an MOS (MOSFET) transistor Q2, the control unit includes a signal acquisition and amplification circuit, a resistance-capacitance voltage division filter circuit, and a driving circuit, an output end of the signal acquisition and amplification circuit is connected to an input end of the resistance-capacitance voltage division filter circuit, an output end of the resistance-capacitance voltage division filter circuit is connected to an input end of the driving circuit, and an output end of the driving circuit is connected to a gate of the MOS transistor Q2.
As shown IN fig. 1, the driving circuit includes a MOSFET driving integrated chip U1, a resistor R4, a resistor R5, and a resistor R6, an OUTH pin of the MOSFET driving integrated chip U1 is connected to one end of the resistor R4, the other end of the resistor R4 is connected to a gate of the MOS transistor Q2, an OUTL pin of the MOSFET driving integrated chip U1 is connected to one end of the resistor R5, the other end of the resistor R5 is connected to a gate of the MOS transistor Q2, one end of the resistor R6 is connected to a gate of the MOS transistor Q2, the other end of the resistor R6 is connected to a source of the MOS transistor Q2, a source of the MOS transistor Q2 is connected to an internal voltage V _ IN, and a drain of the MOS transistor Q2 is connected to an external voltage V _ OUT.
As shown IN fig. 1, the signal collecting and amplifying circuit includes a diode D1A, a diode D1B, a triode Q1A and a triode Q1B, a collector of the triode Q1A is connected with a power supply voltage VCC after being connected with a resistor R4, a base of the triode Q1A is connected with a base of the triode Q1B, an emitter of the triode Q1A is connected with an anode of the diode D1A, a cathode of the diode D1A is connected with an external voltage V _ OUT, a collector of the triode Q1B is connected with the power supply voltage VCC, an emitter of the triode Q1B is connected with an anode of the diode D1B, and a cathode of the diode D1B is connected with an internal voltage V _ IN.
As shown in fig. 1, the parameters of the diode D1A and the diode D1B are consistent, a device D1 with two diodes integrated together is selected, the parameters of the transistor Q1A and the transistor Q1B are consistent, and a device Q1 with two transistors integrated together is selected.
As shown IN fig. 1, the rc voltage-dividing filter circuit includes a resistor R1, a resistor R2, a resistor R3, and a capacitor C1, wherein one end of the resistor R1 is connected to a supply voltage VCC, the other end of the resistor R1 is connected to a collector of the transistor Q1B, one end of the resistor R2 is connected between the collector of the resistor R1 and the collector of the transistor Q1B, the other end of the resistor R2 is connected to one end of the resistor R3, one end of the capacitor C1, and an IN pin of the MOSFET driving integrated chip U1, the other end of the resistor R3 is connected to an internal voltage V _ IN, and the other end of the capacitor C1 is connected to the internal voltage V _ IN.
The invention provides a synchronous rectification MOSFET drive control circuit, which has the working principle as follows:
the MOSFET is applied in a synchronous rectification circuit, and the voltage across D, S is an alternating current signal. When the voltage difference Vds between the two poles of D, S of the MOS transistor Q2 is a negative value (V _ IN > V _ OUT), the output current of the power supply passes through the body diode of the MOSFET IN the forward direction, when the output current is gradually increased, the triode Q1A is gradually switched on (from cut-off, linear conduction and final saturation conduction), the Q1B is gradually switched off (from saturation conduction, linear conduction and final saturation conduction) and the voltages of Va and Vb are gradually increased, when the voltage of Vb is greater than the conduction threshold voltage of the input pin of the driving chip, the MOSFET drives the integrated chip U1 to output a high level, and the MOS transistor Q2 is switched on;
when the voltage difference Vds of the D, S two poles of the MOS transistor Q2 is not less than 0(V _ IN is not more than V _ OUT), the triode Q1A is gradually cut off (from saturation conduction, linear conduction and final to cutoff), the triode Q1B is gradually turned on (from cutoff, linear conduction and final to saturation conduction), the voltage of Va and Vb gradually decreases, when the voltage of Vb is less than the turn-off threshold voltage of the input pin of the driving chip, the MOSFET driving integrated chip U1 outputs low level, and the MOS transistor Q2 is turned off.
The invention realizes the on and off of the synchronous rectification MOSFET through the signal acquisition and amplification circuit, the resistance-capacitance voltage division filter circuit and the drive circuit taking the MOSFET drive integrated chip as the main body. By adjusting parameters of the resistance-capacitance (the resistor R1, the resistor R2, the resistor R3 and the capacitor C1), delay time, rising time and falling time of the driving signal at Vb can be adjusted, so that the on-off speed of the MOS transistor Q2 is adjusted, and the stability of the driving signal is enhanced. Meanwhile, by utilizing the characteristics of short delay time and strong driving capability of the MOSFET driving chip, the threshold value of the high voltage level of the input driving signal is far less than the power supply VCC voltage (which is also the normal driving voltage of the MOSFET), the on-off speed of the MOSFET can be obviously improved, and the on-off delay time can be reduced.
The synchronous rectification MOSFET drive control circuit provided by the invention has the following advantages:
the on-off speed of the synchronous rectification MOSFET is improved, and the on delay time is shortened, so that the on current time of a body diode of the MOSFET is shortened, the on loss and the switching loss of the synchronous rectification MOSFET are reduced, the working efficiency of a power supply is improved, and the stability of a driving signal of the MOSFET is improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (5)
1. A synchronous rectification MOSFET drive control circuit is characterized in that: the power supply comprises a control unit and an MOS tube Q2, wherein the control unit comprises a signal acquisition and amplification circuit, a resistance-capacitance voltage division filter circuit and a drive circuit, the output end of the signal acquisition and amplification circuit is connected with the input end of the resistance-capacitance voltage division filter circuit, the output end of the resistance-capacitance voltage division filter circuit is connected with the input end of the drive circuit, and the output end of the drive circuit is connected with the grid electrode of the MOS tube Q2.
2. The synchronous rectifier MOSFET drive control circuit of claim 1, wherein: the driving circuit comprises a MOSFET driving integrated chip U1, a resistor R4, a resistor R5 and a resistor R6, an OUTH pin of the MOSFET driving integrated chip U1 is connected with one end of the resistor R4, the other end of the resistor R4 is connected with a grid of an MOS tube Q2, an OUTL pin of the MOSFET driving integrated chip U1 is connected with one end of a resistor R5, the other end of the resistor R5 is connected with a grid of the MOS tube Q2, one end of the resistor R6 is connected with a grid of the MOS tube Q2, the other end of the resistor R6 is connected with a source of the MOS tube Q2, the source of the MOS tube Q2 is connected with an internal voltage V _ IN, and the drain of the MOS tube Q2 is connected with an external voltage V _ OUT.
3. The synchronous rectifier MOSFET drive control circuit of claim 2, wherein: signal acquisition and amplifier circuit includes diode D1A, diode D1B, triode Q1A, triode Q1B, triode Q1A's collecting electrode meets and connects power supply voltage VCC behind resistance R4, triode Q1A's base with triode Q1B's base is connected, triode Q1A's projecting pole with diode D1A's positive pole is connected, diode D1A's negative pole meets external voltage V _ OUT, triode Q1B's collecting electrode meets power supply voltage VCC, triode Q1B's projecting pole with diode D1B's positive pole is connected, diode D1B's negative pole meets internal voltage V _ IN.
4. The synchronous rectification MOSFET drive control circuit of claim 3, wherein: the parameters of the diode D1A and the diode D1B are consistent, and the parameters of the triode Q1A and the parameters of the triode Q1B are consistent.
5. The synchronous rectification MOSFET drive control circuit of claim 3, wherein: resistance-capacitance partial pressure filter circuit includes resistance R1, resistance R2, resistance R3 and electric capacity C1, resistance R1's a termination power supply voltage VCC, resistance R1's another termination triode Q1B's collecting electrode, resistance R2's one end connect IN between resistance R1, triode Q1B's the collecting electrode, resistance R2's the other end respectively with resistance R3's one end, electric capacity C1's one end, MOSFET drive integrated chip U1's IN pin connection, resistance R3's another termination internal voltage V _ IN, electric capacity C1's another termination internal voltage V _ IN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010468499.4A CN111600462A (en) | 2020-05-28 | 2020-05-28 | Synchronous rectification MOSFET drive control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010468499.4A CN111600462A (en) | 2020-05-28 | 2020-05-28 | Synchronous rectification MOSFET drive control circuit |
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| CN111600462A true CN111600462A (en) | 2020-08-28 |
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| CN202010468499.4A Pending CN111600462A (en) | 2020-05-28 | 2020-05-28 | Synchronous rectification MOSFET drive control circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114355134A (en) * | 2021-12-06 | 2022-04-15 | 西安电子科技大学 | Online state monitoring circuit based on power device turn-on delay time |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812312A (en) * | 2012-11-08 | 2014-05-21 | 中国北车集团大同电力机车有限责任公司 | Auxiliary converter buck chopping power module drive device |
| CN105450008A (en) * | 2016-01-07 | 2016-03-30 | 烽火通信科技股份有限公司 | ORing MOSFET control circuit and power supply parallel system |
| CN107040738A (en) * | 2017-04-14 | 2017-08-11 | 四川长虹电器股份有限公司 | Eliminate voltage and current exceeded circuit when semiotic function module starts upper electricity |
| CN108847834A (en) * | 2018-07-10 | 2018-11-20 | 南京协和电子科技有限公司 | A kind of IGBT power-down protection apparatus |
| CN212231330U (en) * | 2020-05-28 | 2020-12-25 | 顺科电气技术（深圳）有限公司 | Synchronous rectification MOSFET drive control circuit |
-
2020
- 2020-05-28 CN CN202010468499.4A patent/CN111600462A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812312A (en) * | 2012-11-08 | 2014-05-21 | 中国北车集团大同电力机车有限责任公司 | Auxiliary converter buck chopping power module drive device |
| CN105450008A (en) * | 2016-01-07 | 2016-03-30 | 烽火通信科技股份有限公司 | ORing MOSFET control circuit and power supply parallel system |
| CN107040738A (en) * | 2017-04-14 | 2017-08-11 | 四川长虹电器股份有限公司 | Eliminate voltage and current exceeded circuit when semiotic function module starts upper electricity |
| CN108847834A (en) * | 2018-07-10 | 2018-11-20 | 南京协和电子科技有限公司 | A kind of IGBT power-down protection apparatus |
| CN212231330U (en) * | 2020-05-28 | 2020-12-25 | 顺科电气技术（深圳）有限公司 | Synchronous rectification MOSFET drive control circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114355134A (en) * | 2021-12-06 | 2022-04-15 | 西安电子科技大学 | Online state monitoring circuit based on power device turn-on delay time |
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