CN111600462A - Synchronous rectification MOSFET drive control circuit - Google Patents
Synchronous rectification MOSFET drive control circuit Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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Abstract
本发明提供了一种同步整流MOSFET驱动控制电路，包括控制单元和MOS管Q2，所述控制单元包括信号采集及放大电路、阻容分压滤波电路、驱动电路，所述信号采集及放大电路的输出端与所述阻容分压滤波电路的输入端连接，所述阻容分压滤波电路的输出端与所述驱动电路的输入端连接，所述驱动电路的输出端与所述MOS管Q2的栅极连接。本发明的有益效果是：提高了MOSFET的导通与关断速度、减小导通延迟时间；提高MOSFET驱动电压，降低了导通损耗，提高了电路效率。
The present invention provides a synchronous rectification MOSFET drive control circuit, including a control unit and a MOS transistor Q2. The control unit includes a signal acquisition and amplification circuit, a resistance-capacity voltage divider filter circuit, and a driving circuit. The output end is connected to the input end of the RC voltage divider filter circuit, the output end of the RC voltage divider filter circuit is connected to the input end of the drive circuit, and the output end of the drive circuit is connected to the MOS transistor Q2 gate connection. The beneficial effects of the invention are as follows: the turn-on and turn-off speed of the MOSFET is improved, the turn-on delay time is reduced; the driving voltage of the MOSFET is increased, the conduction loss is reduced, and the circuit efficiency is improved.
Description
技术领域technical field
本发明涉及驱动控制电路，尤其涉及一种同步整流MOSFET驱动控制电路。The invention relates to a drive control circuit, in particular to a synchronous rectification MOSFET drive control circuit.
背景技术Background technique
现有MOSFET驱动控制电路驱动MOSFET的导通与关断速度较慢。The turn-on and turn-off speed of the MOSFET driven by the existing MOSFET driving control circuit is relatively slow.
发明内容SUMMARY OF THE INVENTION
为了解决现有技术中的问题，本发明提供了一种同步整流MOSFET驱动控制电路。In order to solve the problems in the prior art, the present invention provides a synchronous rectification MOSFET drive control circuit.
本发明提供了一种同步整流MOSFET驱动控制电路，包括控制单元和MOS管Q2，所述控制单元包括信号采集及放大电路、阻容分压滤波电路、驱动电路，所述信号采集及放大电路的输出端与所述阻容分压滤波电路的输入端连接，所述阻容分压滤波电路的输出端与所述驱动电路的输入端连接，所述驱动电路的输出端与所述MOS管Q2的栅极连接。The present invention provides a synchronous rectification MOSFET drive control circuit, which includes a control unit and a MOS transistor Q2. The control unit includes a signal acquisition and amplification circuit, a resistance-capacitance voltage divider filter circuit, and a driving circuit. The output end is connected to the input end of the RC voltage divider filter circuit, the output end of the RC voltage divider filter circuit is connected to the input end of the drive circuit, and the output end of the drive circuit is connected to the MOS transistor Q2 gate connection.
作为本发明的进一步改进，所述驱动电路包括MOSFET驱动集成芯片U1、电阻R4、电阻R5、电阻R6，所述MOSFET驱动集成芯片U1的OUTH引脚与所述电阻R4的一端连接，所述电阻R4的另一端与所述MOS管Q2的栅极连接，所述MOSFET驱动集成芯片U1的OUTL引脚与所述电阻R5的一端连接，所述电阻R5的另一端与所述MOS管Q2的栅极连接，所述电阻R6的一端与所述MOS管Q2的栅极连接，所述电阻R6的另一端与所述MOS管Q2的源极连接，所述MOS管Q2的源极接内部电压V_IN，所述MOS管Q2的漏极接外部电压V_OUT。As a further improvement of the present invention, the drive circuit includes a MOSFET drive integrated chip U1, a resistor R4, a resistor R5, and a resistor R6, and the OUTH pin of the MOSFET drive integrated chip U1 is connected to one end of the resistor R4, and the resistor The other end of R4 is connected to the gate of the MOS transistor Q2, the OUTL pin of the MOSFET driving integrated chip U1 is connected to one end of the resistor R5, and the other end of the resistor R5 is connected to the gate of the MOS transistor Q2 one end of the resistor R6 is connected to the gate of the MOS transistor Q2, the other end of the resistor R6 is connected to the source of the MOS transistor Q2, and the source of the MOS transistor Q2 is connected to the internal voltage V_IN , the drain of the MOS transistor Q2 is connected to the external voltage V_OUT.
作为本发明的进一步改进，所述信号采集及放大电路包括二极管D1A、二极管D1B、三极管Q1A、三极管Q1B，所述三极管Q1A的集电极接电阻R4后接供电电压VCC，所述三极管Q1A的基极与所述三极管Q1B的基极连接，所述三极管Q1A的发射极与所述二极管D1A的阳极连接，所述二极管D1A的阴极接外部电压V_OUT，所述三极管Q1B的集电极接供电电压VCC，所述三极管Q1B的发射极与所述二极管D1B的阳极连接，所述二极管D1B的阴极接内部电压V_IN。As a further improvement of the present invention, the signal acquisition and amplification circuit includes a diode D1A, a diode D1B, a triode Q1A, and a triode Q1B, the collector of the triode Q1A is connected to the resistor R4 and then the power supply voltage VCC, and the base of the triode Q1A It is connected to the base of the transistor Q1B, the emitter of the transistor Q1A is connected to the anode of the diode D1A, the cathode of the diode D1A is connected to the external voltage V_OUT, and the collector of the transistor Q1B is connected to the power supply voltage VCC, so The emitter of the transistor Q1B is connected to the anode of the diode D1B, and the cathode of the diode D1B is connected to the internal voltage V_IN.
作为本发明的进一步改进，所述二极管D1A、二极管D1B的参数一致，所述三极管Q1A、三极管Q1B的参数一致。As a further improvement of the present invention, the parameters of the diode D1A and the diode D1B are the same, and the parameters of the transistor Q1A and the transistor Q1B are the same.
作为本发明的进一步改进，所述阻容分压滤波电路包括电阻R1、电阻R2、电阻R3和电容C1，所述电阻R1的一端接供电电压VCC，所述电阻R1的另一端接所述三极管Q1B的集电极，所述电阻R2的一端连接于所述电阻R1、三极管Q1B的集电极之间，所述电阻R2的另一端分别与所述电阻R3的一端、电容C1的一端、MOSFET驱动集成芯片U1的IN引脚连接，所述电阻R3的另一端接内部电压V_IN，所述电容C1的另一端接内部电压V_IN。As a further improvement of the present invention, the resistor-capacitor voltage divider filter circuit includes a resistor R1, a resistor R2, a resistor R3 and a capacitor C1, one end of the resistor R1 is connected to the power supply voltage VCC, and the other end of the resistor R1 is connected to the triode The collector of Q1B, one end of the resistor R2 is connected between the resistor R1 and the collector of the transistor Q1B, and the other end of the resistor R2 is respectively integrated with one end of the resistor R3, one end of the capacitor C1 and the MOSFET driver. The IN pin of the chip U1 is connected, the other end of the resistor R3 is connected to the internal voltage V_IN, and the other end of the capacitor C1 is connected to the internal voltage V_IN.
本发明的有益效果是：通过上述方案，提高了MOSFET 的导通与关断速度、减小导通延迟时间；提高MOSFET驱动电压，降低了导通损耗，提高了电路效率。The beneficial effects of the present invention are as follows: through the above scheme, the turn-on and turn-off speed of the MOSFET is improved, and the turn-on delay time is reduced; the driving voltage of the MOSFET is increased, the conduction loss is reduced, and the circuit efficiency is improved.
附图说明Description of drawings
图1是本发明一种同步整流MOSFET驱动控制电路的电路图。FIG. 1 is a circuit diagram of a synchronous rectification MOSFET drive control circuit of the present invention.
具体实施方式Detailed ways
下面结合附图说明及具体实施方式对本发明作进一步说明。The present invention will be further described below with reference to the accompanying drawings and specific embodiments.
如图1所示，一种同步整流MOSFET驱动控制电路，包括控制单元和MOS（MOSFET）管Q2，所述控制单元包括信号采集及放大电路、阻容分压滤波电路、驱动电路，所述信号采集及放大电路的输出端与所述阻容分压滤波电路的输入端连接，所述阻容分压滤波电路的输出端与所述驱动电路的输入端连接，所述驱动电路的输出端与所述MOS管Q2的栅极连接。As shown in FIG. 1, a synchronous rectification MOSFET drive control circuit includes a control unit and a MOS (MOSFET) transistor Q2. The control unit includes a signal acquisition and amplification circuit, a resistance-capacitance voltage divider filter circuit, and a drive circuit. The signal The output end of the acquisition and amplifying circuit is connected with the input end of the resistance-capacitance voltage divider filter circuit, the output end of the resistance-capacitance voltage divider filter circuit is connected with the input end of the drive circuit, and the output end of the drive circuit is connected with the input end of the drive circuit. The gate of the MOS transistor Q2 is connected.
如图1所示，所述驱动电路包括MOSFET驱动集成芯片U1、电阻R4、电阻R5、电阻R6，所述MOSFET驱动集成芯片U1的OUTH引脚与所述电阻R4的一端连接，所述电阻R4的另一端与所述MOS管Q2的栅极连接，所述MOSFET驱动集成芯片U1的OUTL引脚与所述电阻R5的一端连接，所述电阻R5的另一端与所述MOS管Q2的栅极连接，所述电阻R6的一端与所述MOS管Q2的栅极连接，所述电阻R6的另一端与所述MOS管Q2的源极连接，所述MOS管Q2的源极接内部电压V_IN，所述MOS管Q2的漏极接外部电压V_OUT。As shown in FIG. 1 , the drive circuit includes a MOSFET driver integrated chip U1, a resistor R4, a resistor R5, and a resistor R6. The OUTH pin of the MOSFET driver integrated chip U1 is connected to one end of the resistor R4, and the resistor R4 The other end of the MOSFET is connected to the gate of the MOS tube Q2, the OUTL pin of the MOSFET driver integrated chip U1 is connected to one end of the resistor R5, and the other end of the resistor R5 is connected to the gate of the MOS tube Q2. connected, one end of the resistor R6 is connected to the gate of the MOS transistor Q2, the other end of the resistor R6 is connected to the source of the MOS transistor Q2, and the source of the MOS transistor Q2 is connected to the internal voltage V_IN, The drain of the MOS transistor Q2 is connected to the external voltage V_OUT.
如图1所示，所述信号采集及放大电路包括二极管D1A、二极管D1B、三极管Q1A、三极管Q1B，所述三极管Q1A的集电极接电阻R4后接供电电压VCC，所述三极管Q1A的基极与所述三极管Q1B的基极连接，所述三极管Q1A的发射极与所述二极管D1A的阳极连接，所述二极管D1A的阴极接外部电压V_OUT，所述三极管Q1B的集电极接供电电压VCC，所述三极管Q1B的发射极与所述二极管D1B的阳极连接，所述二极管D1B的阴极接内部电压V_IN。As shown in FIG. 1 , the signal acquisition and amplification circuit includes a diode D1A, a diode D1B, a transistor Q1A, and a transistor Q1B. The collector of the transistor Q1A is connected to the resistor R4 and then connected to the power supply voltage VCC. The base of the transistor Q1A is connected to the The base of the transistor Q1B is connected, the emitter of the transistor Q1A is connected to the anode of the diode D1A, the cathode of the diode D1A is connected to the external voltage V_OUT, the collector of the transistor Q1B is connected to the power supply voltage VCC, and the The emitter of the transistor Q1B is connected to the anode of the diode D1B, and the cathode of the diode D1B is connected to the internal voltage V_IN.
如图1所示，所述二极管D1A、二极管D1B的参数一致，选择两个二极管集成在一起的器件D1，所述三极管Q1A、三极管Q1B的参数一致，选择两个三极管集成在一起的器件Q1。As shown in FIG. 1 , the parameters of the diode D1A and the diode D1B are the same, and the device D1 integrated with the two diodes is selected. The parameters of the transistor Q1A and the transistor Q1B are the same, and the device Q1 integrated with the two transistors is selected.
如图1所示，所述阻容分压滤波电路包括电阻R1、电阻R2、电阻R3和电容C1，所述电阻R1的一端接供电电压VCC，所述电阻R1的另一端接所述三极管Q1B的集电极，所述电阻R2的一端连接于所述电阻R1、三极管Q1B的集电极之间，所述电阻R2的另一端分别与所述电阻R3的一端、电容C1的一端、MOSFET驱动集成芯片U1的IN引脚连接，所述电阻R3的另一端接内部电压V_IN，所述电容C1的另一端接内部电压V_IN。As shown in FIG. 1 , the resistor-capacitor voltage divider filter circuit includes a resistor R1, a resistor R2, a resistor R3 and a capacitor C1. One end of the resistor R1 is connected to the power supply voltage VCC, and the other end of the resistor R1 is connected to the transistor Q1B. The collector of the resistor R2, one end of the resistor R2 is connected between the resistor R1 and the collector of the transistor Q1B, the other end of the resistor R2 is respectively connected with one end of the resistor R3, one end of the capacitor C1, and the MOSFET driver integrated chip The IN pin of U1 is connected, the other end of the resistor R3 is connected to the internal voltage V_IN, and the other end of the capacitor C1 is connected to the internal voltage V_IN.
本发明提供的一种同步整流MOSFET驱动控制电路，其工作原理如下：A synchronous rectification MOSFET drive control circuit provided by the present invention, its working principle is as follows:
MOSFET 应用在同步整流电路中，其D、S 两端电压为交流信号。当MOS管Q2的D、S 两极电压差Vds 为负值（V_IN>V_OUT），电源的输出电流正向经过MOSFET 的体二极管，输出电流逐渐增大时，三极管Q1A 逐渐导通（由截止、线性导通、最后到饱和导通），Q1B 逐渐截止（由饱和导通、线性导通、最后到截止），Va 和Vb 的电压逐渐升高，当Vb的电压大于驱动芯片输入引脚的导通阈值电压时，MOSFET驱动集成芯片U1 输出高电平，MOS管Q2导通；The MOSFET is used in the synchronous rectification circuit, and the voltage across its D and S terminals is an AC signal. When the voltage difference Vds between D and S of the MOS transistor Q2 is negative (V_IN>V_OUT), the output current of the power supply passes through the body diode of the MOSFET in the positive direction, and the output current gradually increases, the transistor Q1A is gradually turned on (from cut-off, linear turn-on, finally to saturation turn-on), Q1B is gradually turned off (from saturation turn-on, linear turn-on, and finally to turn-off), the voltages of Va and Vb gradually increase, when the voltage of Vb is greater than the turn-on of the input pin of the driver chip When the threshold voltage is reached, the MOSFET drives the integrated chip U1 to output a high level, and the MOS transistor Q2 is turned on;
当MOS管Q2的D、S 两极电压差Vds≥0(V_IN≤V_OUT)时，三极管Q1A 逐渐截止（由饱和导通、线性导通、最后到截止），三极管Q1B 逐渐导通（由截止、线性导通、最后到饱和导通），Va 和Vb 电压的逐渐下降，当Vb 的电压小于驱动芯片输入引脚的关断阈值电压时，MOSFET驱动集成芯片U1输出低电平，MOS管Q2关断。When the voltage difference between D and S of the MOS transistor Q2 is Vds≥0 (V_IN≤V_OUT), the transistor Q1A is gradually turned off (from saturated conduction, linear conduction, and finally to cut-off), and the transistor Q1B is gradually turned on (from cut-off, linear conduction turn-on, and finally to saturation turn-on), the voltages of Va and Vb gradually decrease, when the voltage of Vb is less than the turn-off threshold voltage of the input pin of the driver chip, the MOSFET drives the integrated chip U1 to output a low level, and the MOS transistor Q2 turns off .
本发明通过信号采集及放大电路、阻容分压滤波电路、MOSFET 驱动集成芯片为主体的驱动电路，实现同步整流MOSFET 的导通与关断。通过调整阻容（电阻R1, 电阻R2, 电阻R3,电容C1）的参数，可调整Vb 处的驱动信号的延迟时间、上升时间和下降时间，从而调整MOS管Q2的导通与关断速度，并增强驱动信号的稳定性。同时利用MOSFET驱动芯片的延迟时间短、驱动能力强的特点，同时其输入驱动信号的电压高电平的阈值远小于其供电VCC电压（也是MOSFET 的正常驱动电压），可显著提高MOSFET 的导通与关断速度、减小导通延迟时间。The present invention realizes the turn-on and turn-off of the synchronous rectification MOSFET through a signal acquisition and amplification circuit, a resistance-capacitance voltage divider filter circuit, and a driving circuit with a MOSFET driving integrated chip as the main body. By adjusting the parameters of the resistance and capacitance (resistor R1, resistance R2, resistance R3, capacitance C1), the delay time, rise time and fall time of the drive signal at Vb can be adjusted, thereby adjusting the turn-on and turn-off speed of the MOS transistor Q2, And enhance the stability of the driving signal. At the same time, the MOSFET driver chip has the characteristics of short delay time and strong driving ability, and the high-level threshold of the input driving signal is much smaller than its power supply VCC voltage (which is also the normal driving voltage of the MOSFET), which can significantly improve the conduction of the MOSFET. and turn-off speed, reducing turn-on delay time.
本发明提供的一种同步整流MOSFET驱动控制电路的优点如下：The advantages of a synchronous rectification MOSFET drive control circuit provided by the present invention are as follows:
通过提高同步整流MOSFET 的导通与关断速度、减小导通延迟时间，从而减小MOSFET体二极管的导通电流时间、减小同步整流MOSFET 的导通损耗和开关损耗，提高电源工作效率，并提高MOSFET 的驱动信号的稳定性。By improving the turn-on and turn-off speed of the synchronous rectifier MOSFET and reducing the turn-on delay time, the on-current time of the MOSFET body diode can be reduced, the conduction loss and switching loss of the synchronous rectifier MOSFET can be reduced, and the working efficiency of the power supply can be improved. And improve the stability of the driving signal of the MOSFET.
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.
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| CN114355134A (en) * | 2021-12-06 | 2022-04-15 | 西安电子科技大学 | On-line condition monitoring circuit based on turn-on delay time of power devices |
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