CN105450008A - ORing MOSFET control circuit and power supply parallel system - Google Patents
ORing MOSFET control circuit and power supply parallel system Download PDFInfo
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- CN105450008A CN105450008A CN201610007788.8A CN201610007788A CN105450008A CN 105450008 A CN105450008 A CN 105450008A CN 201610007788 A CN201610007788 A CN 201610007788A CN 105450008 A CN105450008 A CN 105450008A
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- triode
- resistance
- mosfet pipe
- electrode
- control circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J1/00—Circuit arrangements for dc mains or dc distribution networks
- H02J1/10—Parallel operation of dc sources
- H02J1/102—Parallel operation of dc sources being switching converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses an ORing MOSFET control circuit and a power supply parallel system. The ORing MOSFET control circuit comprises a control circuit, a MOSFET and a resistance-capacitance unit, wherein the control circuit comprises a first triode and a second triode; a source electrode and a drain electrode of the MOSFET are respectively connected with a power supply module and a common bus, and a grid electrode of the MOSFET is connected with a collector electrode of the first triode; base electrodes of the first triode and the third triode are connected each other, the base electrode and a collector electrode of the second triode are in short circuit, and the collector electrodes of the first triode and the third triode are respectively connected with the source electrode and the drain electrode of the MOSFET; the resistance-capacitance unit is in series connection with a first capacitor through a first resistor and then is respectively connected with the source electrode and the drain electrode of the MOSFET; the collector electrodes of the first triode and the second triode are connected with a bias source. According to the ORing MOSFET control circuit and the power supply parallel system, the resistance-capacitance unit is in parallel connection with the source electrode and the drain electrode of the MOSFET, so that the peak voltage of the MOSFET can be reduced; emitter electrodes of the first triode and the second triode are respectively connected with a diode, so that the MOSFET can be adjusted to enable the loss to be lower, and a problem that control circuit is damaged due to overvoltage when input electrodes are connected reversely is prevented.
Description
Technical field
The present invention relates to power-supply system control field, be specifically related to ORingMOSFET circuit and power sources in parallel system.
Background technology
Electric power system adopts power sources in parallel system (parallelsystem) usually, by multiple power module Parallel opertation on the power supply of a public output bus.Between power module and output bus, ORingFET circuit can be set, abnormal for causing whole power-supply system to occur because the single power module product in power-supply system breaks down in preventing.
For this reason, Chinese invention patent CN101490922A discloses a kind of improvement controller for O shape ring field effect transistor, two triodes are adopted optionally to control opening or turning off of described MOSFET pipe, compared with the ORing circuit of the employing comparator of routine, the Input Offset Value because of comparator can be avoided ORing to be controlled to the impact caused, effectively improve the efficiency that ORing controls.But there is following problem in foregoing circuit:
(1) there will be peak voltage Vds when MOSFET operating state overturns fast excessive, cause MOSFET pipe because of excessive pressure damages;
(2) damage of this control circuit element can be caused when inputting reverse polarity connection.
In view of this, be badly in need of improving existing ORingMOSFET circuit, damage to avoid MOSFET pipe.
Summary of the invention
Technical problem to be solved by this invention be ORingMOSFET circuit in running, MOSFET pipe overturns fast because of operating state or inputs polarity connection excessive pressure damages on the contrary, thus it is abnormal to cause power-supply system to occur.
In order to solve the problems of the technologies described above, ORingMOSFET control circuit of the present invention, comprise control unit and MOSFET to manage described control unit and comprise the first triode and the second triode, the source electrode of described MOSFET pipe is connected power module and common bus respectively with drain electrode, the grid of described MOSFET pipe connects the collector electrode of described first triode, the base stage of described first triode is connected with the base stage of described second triode, and the base stage of described second triode and collector electrode short circuit, described first, the collector electrode of the second triode connects source electrode and the drain electrode of described MOSFET pipe respectively, described first, the collector electrode of the second triode connects bias source, it is characterized in that, also comprise capacitor resistor unit, described capacitor resistor unit is by the first resistance and the source electrode and the drain electrode that are connected described MOSFET pipe after the first capacitance series respectively.
In such scheme, described control unit also comprises first, second diode, and the anode of first, second diode described connects the emitter of first, second triode described respectively; The negative electrode of first, second diode described connects source electrode and the drain electrode of described MOSFET pipe respectively.
In such scheme, described control unit also comprises the 4th, the 5th and the 6th resistance, and described 4th, the 5th resistance is serially connected with the base stage of first, second triode respectively, and described 6th resistance is serially connected with the grid of described MOSFET pipe.
In such scheme, also comprise the 3rd diode, the second electric capacity and the 7th resistance, described first triode and described second triode are connected the output of described 7th resistance after being connected in series described second resistance and described 3rd resistance respectively, bias source described in the input termination of described 7th resistance; The negative electrode of described 3rd diode and one end of described second electric capacity connect simultaneously described second, third, the common port of the 7th resistance, the source electrode of MOSFET pipe described in the anode of described 3rd diode and another termination of described second electric capacity.
In such scheme, described first triode and the second triode adopt similar elements, and described first diode and the second diode adopt similar elements.
Present invention also offers a power sources in parallel system, comprise multiple power module, each power module connects common bus by ORingMOSFET control circuit described above.
The present invention is an in parallel capacitor resistor unit in the drain electrode and source electrode of MOSFET pipe, can reduce peak voltage Vds, prevent MOSFET pipe from damaging because of overvoltage when MOSFET pipe operating state overturns fast; Be connected in series an identical diode at the emitter of first, second triode respectively simultaneously, MOSFET pipe Vgs level can be regulated, make the loss of MOSFET pipe lower, and the damage of involutory road control circuit element when preventing from inputting reverse polarity connection.
Accompanying drawing explanation
Fig. 1 is ORingMOSFET control circuit structure chart in the present invention;
Fig. 2 is power sources in parallel system construction drawing of the present invention.
Embodiment
Below in conjunction with embodiment and Figure of description, the present invention is described in detail.
As shown in Figure 1, ORingMOSFET control circuit provided by the invention, comprising:
Input DC-IN, for receiving the voltage that power module provides;
Output DC-OUT, for providing voltage to common bus;
Bias source BIAS, provides bias voltage;
MOSFET pipe T1, is connected between input DC-IN and output DC-OUT, and the source terminal of MOSFET pipe T1 is connected to input DC-IN, and drain electrode is connected to output DC-OUT.
Control unit 20, changes the on off state of T1 by detecting T1 source-drain voltage difference, with being communicated with or disconnection of control input end DC-IN and output DC-OUT.
Capacitor resistor unit 30, reduces peak voltage Vds when overturning fast for MOSFET pipe operating state, prevents MOSFET pipe from damaging because of overvoltage.
Control unit 20 by the first triode T2, the second triode T3, the first diode D4, the second diode D5 and the 4th, the 5th, the 6th resistance R4, R5, R6 form.The source electrode of MOSFET pipe T1 is connected input DC_IN and output DC_OUT respectively with drain electrode, the collector electrode of the first triode T2 is connected after grid serial connection the 6th resistance R6 of MOSFET pipe T1,6th resistance R6 plays damping action, prevent the Vgs voltage of MOSFET pipe T1 from occurring concussion when opening or turn off, misoperation even damages MOSFET pipe T1 to cause parallel circuits to occur.The emitter of the first triode T2 connects the first diode D4 anode, first diode D4 negative electrode connects MOSFET pipe T1 source electrode, be connected with the collector electrode of the second triode T3 and the 5th resistance R5 one end respectively after base stage serial connection the 4th resistance R4 of the first triode T2, the 5th resistance R5 other end connects the second triode T3 base stage, the emitter of the second triode T2 connects the second diode D5 anode, and the second diode D5 negative electrode connects MOSFET pipe T1 drain electrode.
In order to ensure that ORing module can accurate control MOSFET pipe T1, first triode T2 and the second triode T3 and the first diode D4 and the second diode D5 is the device of same size, can ensure that the Vbe of two triodes is close like this, the conduction voltage drop of two diodes is close, its conduction voltage drop on feedback quantity MOSFET pipe T1 is affected minimum.Be generally use two triode behaviors more similar, the device of these two triodes integrated can be selected, if any the packaging of 6PinSOT-23.
Circuit of the present invention also comprises the 3rd diode D3, the second electric capacity C5 and the 7th resistance R1, first triode T2 and the second triode T3 are connected the output of the 7th resistance R1 simultaneously after being connected in series the second resistance R2 and the 3rd resistance R3 respectively, the input termination bias source BIAS of the 7th resistance R1; The negative electrode of the 3rd diode D3 and one end of the second electric capacity C5 connect the common port of the 7th resistance R1, the second resistance R2, the 3rd resistance R3 simultaneously, and the anode of the 3rd diode D3 and the other end of the second electric capacity C5 connect the source electrode of MOSFET pipe T1 simultaneously.The bias voltage of this circuit is provided by bias source BIAS, and the 3rd diode D3 and the second electric capacity C5 powers for first, second triode T2, T3 after accessory power supply signal is carried out voltage regulation filtering.
Capacitor resistor unit 30 is the source electrode and the drain electrode that are connected MOSFET pipe T1 after being connected in series with the first electric capacity C6 by the first resistance R7 respectively.Capacitor resistor unit 30 mainly reduces peak voltage Vds when MOSFET pipe operating state overturns fast, prevents MOSFET pipe T1 from damaging because of overvoltage;
In ordinary circumstance, the grid of MOSFET pipe T1 can the source electrode of MOSFET pipe T1 to drain electrode have very small area analysis to flow through or very little body diode pressure drop time conducting, conducting and the turn-off speed of MOSFET pipe T1 can be adjusted thus by the resistance adjusting the second resistance R2.Access the initial voltage level that first, second triode can improve grid when MOSFET pipe T1 starts conducting.
Detailed introduction is done to the operation principle of ORingMOSFET control circuit provided by the invention below:
As shown in Figure 1, control unit 20 is opening and closing of the small electric pressure reduction control MOSFET pipe according to input DC_IN and output DC_OUT.
When output DC-OUT voltage ratio input DC_IN voltage height, MOSFET pipe T1 keeps off state, disconnects output DC-OUT and input DC_IN; When output DC-OUT voltage ratio input DC_IN voltage is low, MOSFET pipe T1 may enter the state of active conducting or conducting completely, and now electric current flows to output DC-OUT from input DC_IN end.
When output DC-OUT voltage is suddenly higher than input DC_IN voltage, the body diode of MOSFET pipe T1 can stop reverse charging.Second triode T3 can because output DC-OUT voltage raises suddenly and ends, now, the voltage of the second triode T3 starts to raise, due to the second triode T3 base stage and collector electrode short circuit, the base voltage of the first coupled triode T2 can be caused to raise and make the first triode T2 enter saturation condition, MOSFET pipe T1 grid voltage is dragged down simultaneously, and now MOSFET pipe T1 turns off.
When input DC_IN voltage start rise and higher than output DC-OUT voltage time, the body diode of MOSFET pipe T1 starts forward conduction, second triode T3 conducting and start extract by the electric current in the first triode T2 base stage, make the first triode T2 exit saturation condition, reduce the electric current of the first triode T2 collector electrode simultaneously and increase the voltage of collector electrode; Because the collector voltage of the first triode T2 rises, MOSFET pipe T1 grid voltage starts to rise, when MOSFET pipe T1 grid voltage reaches threshold value VghTH, and MOSFET pipe T1 conducting.
In ORingMOSFET control circuit, MOSFET pipe can multiple parallel connection, and each MOSFET pipe exists certain power consumption, multiplely can evenly arrange when being connected in parallel on layout, wiring, ensure that same electric current shared by each MOSFET pipe, each like this MOSFET pipe heating is also basically identical.Close in the application of road at big current, multiple MOSFET pipe parallel connection uses its advantage more obvious.
As shown in Figure 2, present invention also offers a kind of power sources in parallel system, comprise at least one power module 40, each power module 40 is connected with an ORingFET control module 50, and ORingFET control module 50 is connected with common bus 60.ORingFET control module 50 is aforesaid ORingMOSFET control circuit herein.
Each described power module 40 is connected with the input DC_IN of each self-corresponding ORingFET control module 50 respectively, and ORingFET control module 50 output DC-OUT connects described output bus 60.
During whole power sources in parallel system worked well, each power module 20 all can provide a voltage slightly higher than common bus 60 voltage a little, now ORingFET control module 50 is according to the grid voltage of corresponding power module 40 output current control MOSFET pipe, when power module 40 output current is less, MOSFET pipe is operated in magnifying state, is operated in saturation condition when electric current is larger.When a certain power module 40 breaks down as short circuit, corresponding ORingFET control module can allow MOSFET pipe enter cut-off state fast, stop reverse current to produce, make common bus can not be influenced because single power module lost efficacy, be conducive to the reliability improving whole power-supply system work.
The present invention is not limited to above-mentioned preferred forms, and anyone should learn the structural change made under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, all falls within protection scope of the present invention.
Claims (6)
1.ORingMOSFET control circuit, comprise control unit and MOSFET pipe, described control unit comprises the first triode and the second triode, the source electrode of described MOSFET pipe is connected power module and common bus respectively with drain electrode, the grid of described MOSFET pipe connects the collector electrode of described first triode, the base stage of described first triode is connected with the base stage of described second triode, and the base stage of described second triode and collector electrode short circuit, described first, the collector electrode of the second triode connects source electrode and the drain electrode of described MOSFET pipe respectively, described first, the collector electrode of the second triode connects bias source, it is characterized in that, also comprise capacitor resistor unit, described capacitor resistor unit is by the first resistance and the source electrode and the drain electrode that are connected described MOSFET pipe after the first capacitance series respectively.
2. ORingMOSFET control circuit as claimed in claim 1, it is characterized in that, described control unit also comprises first, second diode, and the anode of first, second diode described connects the emitter of first, second triode described respectively; The negative electrode of first, second diode described connects source electrode and the drain electrode of described MOSFET pipe respectively.
3. ORingMOSFET control circuit as claimed in claim 1, it is characterized in that, described control unit also comprises the 4th, the 5th and the 6th resistance, and described 4th, the 5th resistance is serially connected with the base stage of first, second triode respectively, and described 6th resistance is serially connected with the grid of described MOSFET pipe.
4. ORingMOSFET control circuit as claimed in claim 1, it is characterized in that, also comprise the 3rd diode, the second electric capacity and the 7th resistance, described first triode and described second triode connect the output of described seven resistance after being connected in series described second resistance and described 3rd resistance respectively, bias source described in the input termination of described 7th resistance; The negative electrode of described 3rd diode and one end of described second electric capacity connect simultaneously described second, third, the common port of the 7th resistance, MOSFET pipe source electrode described in the anode of described 3rd diode and another termination of described second electric capacity.
5. ORingMOSFET control circuit as claimed in claim 2, it is characterized in that, described first triode and the second triode adopt similar elements, and described first diode and the second diode adopt similar elements.
6. power sources in parallel system, is characterized in that, comprises multiple power module, and each power module connects common bus by the ORingMOSFET control circuit as described in any one of claim 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610007788.8A CN105450008A (en) | 2016-01-07 | 2016-01-07 | ORing MOSFET control circuit and power supply parallel system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610007788.8A CN105450008A (en) | 2016-01-07 | 2016-01-07 | ORing MOSFET control circuit and power supply parallel system |
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| Publication Number | Publication Date |
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| CN105450008A true CN105450008A (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610007788.8A Pending CN105450008A (en) | 2016-01-07 | 2016-01-07 | ORing MOSFET control circuit and power supply parallel system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106300321A (en) * | 2016-08-31 | 2017-01-04 | 四川升华电源科技有限公司 | Power supply anti-back flow circuit |
| US10284189B1 (en) * | 2017-12-04 | 2019-05-07 | Sea Sonic Electronics Co., Ltd. | Redundant isolating switch control circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297613A (en) * | 1998-04-14 | 2001-05-30 | Nmb(美国)公司 | Circuit simulating diode |
| CN101490922A (en) * | 2006-07-27 | 2009-07-22 | 雅迪信科技有限公司 | Improved controller for o-ring field effect transistor |
| US20090285001A1 (en) * | 2008-05-16 | 2009-11-19 | Zong Bo Hu | Control circuits and methods for controlling switching devices |
| CN204046411U (en) * | 2014-09-10 | 2014-12-24 | 广州优联电气科技有限公司 | Be applicable to single normal shock absorbing circuit of middle low power modular power source |
-
2016
- 2016-01-07 CN CN201610007788.8A patent/CN105450008A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1297613A (en) * | 1998-04-14 | 2001-05-30 | Nmb(美国)公司 | Circuit simulating diode |
| CN101490922A (en) * | 2006-07-27 | 2009-07-22 | 雅迪信科技有限公司 | Improved controller for o-ring field effect transistor |
| US20090285001A1 (en) * | 2008-05-16 | 2009-11-19 | Zong Bo Hu | Control circuits and methods for controlling switching devices |
| CN204046411U (en) * | 2014-09-10 | 2014-12-24 | 广州优联电气科技有限公司 | Be applicable to single normal shock absorbing circuit of middle low power modular power source |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106300321A (en) * | 2016-08-31 | 2017-01-04 | 四川升华电源科技有限公司 | Power supply anti-back flow circuit |
| US10284189B1 (en) * | 2017-12-04 | 2019-05-07 | Sea Sonic Electronics Co., Ltd. | Redundant isolating switch control circuit |
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Application publication date: 20160330 |
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