CN113437736A - Hot plug protection circuit and method - Google Patents
Hot plug protection circuit and method Download PDFInfo
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- CN113437736A CN113437736A CN202110602933.8A CN202110602933A CN113437736A CN 113437736 A CN113437736 A CN 113437736A CN 202110602933 A CN202110602933 A CN 202110602933A CN 113437736 A CN113437736 A CN 113437736A
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- 238000004146 energy storage Methods 0.000 claims abstract description 8
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/20—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess voltage
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Abstract
The hot plug protection circuit comprises at least one field effect transistor arranged between a power supply end and a load end, wherein a current detection circuit is electrically connected between the power supply end and a drain electrode of the field effect transistor; the current detection circuit is electrically connected with the grid voltage control unit; the grid of the field effect tube is electrically connected with the grid voltage control unit through the grid driving circuit and is a voltage output end; the grid driving circuit is controlled and connected to the grid voltage control unit; the current detection circuit collects power supply current, the grid voltage control unit judges whether the power supply current exceeds a set current threshold value, if not, the grid voltage control unit outputs first grid voltage, and if so, the grid voltage control unit outputs second grid voltage lower than the first grid voltage; the source electrode of the field effect transistor is electrically connected with the grounded energy storage capacitor. The grid voltage control unit of this application ability provides little grid drive voltage when heavy current, reduces drain current and makes the field effect transistor remain throughout in the SOA region.
Description
Technical Field
The application relates to the field of hot plug protection circuits, in particular to a hot plug protection circuit.
Background
In many hot swap protection circuit structures, a hot swap protection controller is usually used to connect an external MOSFET, the external MOSFET is disposed between an input end and a load, and the hot swap protection controller controls the on and off of the MOSFET and utilizes the durability of the MOSFET itself to provide protection functions such as limiting input surge current, limiting current, and breaking circuit.
The SOA (safe operating area) of a MOSFET defines the endurance of the MOSFET. The SOA of a MOSFET is shown in fig. 1, and the larger the drain current at a given drain-source voltage, the smaller the pulse width allowed by the MOSFET, e.g., the current pulse allowed in fig. 1 from infinity (DC) to 1 microsecond. When the source of the MOSFET is short-circuited to cause large current, under the condition that the drain-source voltage is constant, the power consumption of the MOSFET is increased due to the large current, the MOSFET is easy to work outside the SOA area, and the MOSFET is easy to burn once the MOSFET works outside the SOA area. And the MOSFET temperature is increased by large power consumption easily caused by large current, the whole SOA curve moves downwards along with the increase of the MOSFET temperature, the allowable power consumption of the pulse with the same current pulse width is smaller, the SOA area is smaller, and the durability of the MOSFET is lower. At present, the hot plug protection circuit adopting the MOSFET is applied to various electrical appliances, and once the MOSFET is damaged, more serious electrical appliance faults are easily caused.
Disclosure of Invention
In order to solve the above technical problem or at least partially solve the above technical problem, in a first aspect, the present application provides a hot swap protection circuit, including at least one fet disposed between a power supply terminal and a load terminal,
the current detection circuit is electrically connected between the power supply end and the drain electrode of the field effect tube and is used for measuring the power supply current of the power supply end; the current detection circuit is electrically connected with the grid voltage control unit;
the grid of the field effect tube is electrically connected with the voltage output end of the grid voltage control unit through the grid driving circuit; the grid driving circuit is controlled to be connected to the grid voltage control unit; the current detection circuit collects power supply current, the grid voltage control unit judges whether the power supply current exceeds a set current threshold value, if not, the grid voltage control unit outputs a first grid voltage, and if the power supply current exceeds the set current threshold value, the grid voltage control unit outputs a second grid voltage lower than the first grid voltage; the grid voltage control unit controls the on and off of the grid driving circuit;
and the source electrode of the field effect transistor is electrically connected with the grounded energy storage capacitor.
Furthermore, the power supply terminal is electrically connected to a voltage monitoring circuit, the voltage monitoring circuit is used for monitoring the voltage range of the power supply terminal, the voltage monitoring circuit is electrically connected to the gate voltage control unit, and the gate voltage control unit controls the gate driving circuit according to the signal of the voltage monitoring circuit.
Further, the grid voltage control unit determines whether the voltage of the power supply is greater than a first voltage threshold and less than a second voltage threshold, and if so, the grid voltage control unit controls the grid driving circuit to provide the first grid voltage or the second grid voltage for the grid of the field effect transistor; otherwise, the grid voltage control unit controls the grid driving circuit to turn off the field effect transistor.
Furthermore, a temperature detection circuit is arranged at the field effect transistor and used for measuring the temperature of the field effect transistor, the temperature detection circuit is electrically connected with the grid voltage control unit, and the grid voltage control unit outputs first grid voltage or second grid voltage according to the temperature value of the temperature detection circuit.
Furthermore, the gate voltage control unit determines whether the temperature detected by the temperature detection circuit exceeds a set temperature threshold, and if the temperature detected by the temperature detection circuit exceeds the set temperature threshold, the gate voltage control unit outputs a third gate voltage lower than the first gate voltage, and if the temperature detected by the temperature detection circuit does not exceed the set temperature threshold, the gate voltage control unit outputs the first gate voltage.
Furthermore, the current detection circuit comprises a measuring resistor, the measuring resistor is connected between the power supply end and the drain electrode of the field effect transistor, the two ends of the measuring resistor are connected with a differential operational amplifier, and the differential operational amplifier is electrically connected with the grid voltage control unit.
Furthermore, the voltage monitoring circuit comprises a plurality of divider resistors connected in series between the power supply terminal and the ground signal, the divider resistors are electrically connected to one input terminals of the first comparator and the second comparator, the other input terminals of the first comparator and the second comparator are electrically connected to a first reference voltage and a second reference voltage respectively, the first reference voltage is set according to the first voltage threshold, the second reference voltage is set according to the second voltage threshold, and the outputs of the first comparator and the second comparator are electrically connected to the gate voltage control unit.
In another aspect, the present application provides a hot plug protection method, including:
the current detection circuit collects the power supply current and sends the power supply current to the grid voltage control unit;
the grid voltage control unit judges whether the power supply current exceeds a set current threshold value;
if the set current threshold value is not exceeded, the grid voltage control unit outputs a first grid voltage to drive the grid of the field effect transistor;
and if the set current threshold value is exceeded, the grid voltage control unit outputs a second grid voltage to drive the grid of the field effect tube.
Furthermore, the hot plug protection method further comprises the following steps:
the voltage monitoring circuit monitors the range of the voltage of the power supply;
the voltage monitoring circuit sends a monitoring result to a grid voltage control unit, and the grid voltage control unit determines whether the voltage of the power supply terminal is greater than a first voltage threshold and smaller than a second voltage threshold;
if yes, the grid voltage control unit controls the grid driving circuit to provide a first grid voltage or a second grid voltage for the grid of the field effect transistor;
otherwise, the grid voltage control unit controls the grid driving circuit to turn off the field effect transistor.
Furthermore, the hot plug protection method further includes:
the temperature detection circuit detects the temperature of the field effect tube and sends the temperature to the grid voltage control unit,
the grid voltage control unit judges whether the temperature exceeds a set temperature threshold value,
if so, the gate voltage control unit outputs a third gate voltage lower than the first gate voltage,
otherwise, the gate voltage control unit outputs a first gate voltage.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
this application utilizes current detection unit detects supply current, and when supply current exceeded and sets for the electric current threshold value, grid voltage control unit output lower second grid voltage relatively comes drive field effect transistor, limits field effect transistor drain current through the grid voltage that reduces field effect transistor to when guaranteeing that faults such as taking place the short circuit produce the heavy current, field effect transistor is worked all the time in the SOA, can not burnt out.
This application utilizes temperature detection circuit detects field effect transistor's temperature and sends for gate control unit, gate voltage control unit judges whether the temperature surpasss the temperature threshold value of settlement, if surpass the temperature threshold value of settlement, gate voltage control unit output relatively lower third gate voltage limits drain current through the gate voltage that reduces field effect transistor, reduces field effect transistor's consumption.
The voltage monitoring circuit is used for monitoring the voltage condition of the power supply end, and when the voltage of the power supply end is stabilized between a first voltage threshold and a second voltage threshold, the grid voltage control unit controls the grid driving circuit to provide driving voltage for the grid of the field effect transistor, so that the power supply end charges the energy storage capacitor and then supplies power to the load end; when the voltage of the power supply end does not stably reach the first voltage threshold or exceeds the second voltage threshold, the grid voltage control unit controls the grid driving circuit to enable the field effect tube to be turned off in time, and the influence of abnormal power supply of the power supply end on the load end is avoided.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
FIG. 1 is a schematic diagram of a field effect transistor SOA (safe operating area);
FIG. 2 is a graph showing a transfer characteristic of a field effect transistor;
FIG. 3 is a schematic diagram of the FET being maintained in the SOA after the FET drain current is limited;
fig. 4 is a schematic diagram of a hot plug protection circuit according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of another hot plug protection circuit according to an embodiment of the present disclosure;
fig. 6 is a flowchart illustrating a process of collecting current to control a driving voltage of a fet according to a current detection circuit according to an embodiment of the present application;
FIG. 7 is a flowchart illustrating the method for controlling the on/off of the FET according to the voltage range of the power supply terminal according to an embodiment of the present application;
fig. 8 is a flowchart for controlling the driving voltage of the fet according to the current collected by the current detection circuit and the temperature collected by the temperature detection circuit according to the embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
First, the relevant content of the field effect transistor SOA is described, and referring to fig. 1, the field effect transistor SOA is mainly related to the maximum withstand voltage of the drain-source voltage, the maximum single pulse current of the drain-source voltage, the on-resistance between the drain and the source, and the thermal resistance loss. In fig. 1, the abscissa represents drain-source voltage, the ordinate represents drain current, the rightmost vertical line in fig. 1 represents maximum withstand voltage limit of drain-source voltage, the right-hand oblique line represents thermal resistance loss limit, the top horizontal line represents maximum single pulse current limit of drain-source, and the left-hand oblique line represents on-resistance limit between drain and source. Each right-hand oblique line represents the allowed power consumption at a certain pulse width, and it can be seen from fig. 1 that as the power consumption increases, the allowable pulse width of the ji thermal resistance loss limit becomes shorter and shorter, ranging from infinity (DC) to 1 microsecond. Therefore, when a large current is caused by source short circuit, the condition that the working parameters of the field effect transistor exceed the SOA is easy to occur, so that the field effect transistor is burnt.
Referring to fig. 2, fig. 2 is a transfer characteristic curve of the fet, in which the abscissa represents the gate-source voltage and the ordinate represents the drain current, and it can be seen from the transfer characteristic curve of the fet that the drain current decreases with decreasing gate-source voltage. Referring to fig. 2 and 3, when the gate-source voltage of the fet is reduced to 4.5V, the drain current is approximately 10A. In fig. 3, the gate-source voltage is within the SOA for sustainable operation (DC) up to 20V when the drain current is not 10A.
Example 1
Referring to fig. 4, the present embodiment provides a hot swap protection circuit, which includes at least one fet disposed between a power supply terminal and a load terminal, wherein the power supply terminal is connected to a grounded filter capacitor, a current detection circuit is electrically connected between the power supply terminal and a drain of the fet, and the current detection circuit is configured to measure a power supply current of the power supply terminal; the current detection circuit is electrically connected with the grid voltage control unit and sends a signal representing the power supply current to the grid voltage control unit; in a specific implementation process, the current detection circuit comprises a measuring resistor, the resistance value of a feasible measuring resistor is 0.005 omega, the measuring resistor is connected between the power supply end and the drain electrode of the field effect transistor, two ends of the measuring resistor are connected with a differential operational amplifier, and the differential operational amplifier is electrically connected with the grid voltage control unit. When the power supply end outputs current, voltage drop is generated on the measuring resistor, the voltage drop is in direct proportion to the magnitude of the current, the amplified voltage drop signal is amplified and sent to the grid voltage control unit through the differential operational amplifier, and the grid voltage control unit calculates the current according to the amplified voltage drop signal and compares the current with a set current threshold value. If the current measured by the current detection circuit does not exceed a set current threshold, the voltage output end of the grid voltage control unit outputs a first grid voltage; and if the current measured by the current detection circuit exceeds a set current threshold, the voltage output end of the grid voltage control unit outputs a second grid voltage lower than the first grid voltage.
The grid of the field effect tube is electrically connected with the voltage output end of the grid voltage control unit through the grid driving circuit; the grid driving circuit is controlled to be connected to the grid voltage control unit; the grid voltage control unit controls the on-off of the grid driving circuit, so that the on-off of the field effect transistor is controlled. In a specific implementation process, the power supply end is electrically connected with a voltage monitoring circuit, the voltage monitoring circuit is used for monitoring the voltage range of the power supply end, the voltage monitoring circuit is electrically connected with the grid voltage control unit, and the grid voltage control unit controls the grid driving circuit according to signals of the voltage monitoring circuit. The voltage monitoring circuit comprises two divider resistors which are connected in series between a power supply end and a ground signal, one input end of a first comparator and one input end of a second comparator are electrically connected between the two divider resistors, the other input end of the first comparator and the other input end of the second comparator are respectively electrically connected with a first reference voltage and a second reference voltage, the first reference voltage is set according to a first voltage threshold, the second reference voltage is set according to a second voltage threshold, and the outputs of the first comparator and the second comparator are electrically connected with a grid voltage control unit. And the grid voltage control unit judges the range of the power supply voltage of the power supply end according to the output of the first comparator and the second comparator. In the application, the grid voltage control unit determines whether the voltage of the power supply end is greater than a first voltage threshold and smaller than a second voltage threshold, and if the voltage of the power supply end is between the first voltage threshold and the second voltage threshold, the grid voltage control unit controls the grid driving circuit to provide the first grid voltage or the second grid voltage for the grid of the field effect transistor, so that the field effect transistor is conducted; otherwise, the grid voltage control unit controls the grid driving circuit to provide a low-level signal for the grid of the field effect transistor, so that the field effect transistor is turned off.
When large current occurs under the control of the gate control unit, the gate control unit outputs a second gate voltage to drive the field effect transistor, and a feasible second gate voltage is 4.5V as shown in fig. 2, so the drain current of the field effect transistor is limited to 10A, and when the drain current of the field effect transistor is limited to 10A, the drain-source voltage is still in a DC range up to 20V, for the server, the related working voltages include 12V, 5V, 3.3V and 1.8V, so even if the working voltage of 12V is instantaneously pulsed, the drain-source voltage is at most about 13V and is far smaller than 20V, therefore, the server adopting the hot swap protection circuit of the present application can always work in an SOA interval, and the field effect transistor cannot be damaged due to large current generated by source short circuit.
According to the power supply terminal voltage monitoring method and device, the field effect tube is controlled according to the monitoring result, the power supply terminal voltage is guaranteed to be stable at an appropriate value, and then power can be supplied to the load terminal, and the safety of the load terminal is guaranteed.
And the source electrode of the field effect transistor is electrically connected with the grounded energy storage capacitor, and the working voltage is provided for the load end through the energy storage capacitor.
Example 2
The present embodiment provides another hot swap protection circuit, which is the same as that in embodiment 1, and includes at least one field effect transistor disposed between a power supply terminal and a load terminal, where the power supply terminal passes through a filter capacitor connected to ground, and a current detection circuit is electrically connected between the power supply terminal and a drain of the field effect transistor, and the current detection circuit is configured to measure a power supply current of the power supply terminal; the current detection circuit is electrically connected with the grid voltage control unit and sends a signal representing the power supply current to the grid voltage control unit; in a specific implementation process, the current detection circuit comprises a measuring resistor, the resistance value of a feasible measuring resistor is 0.005 omega, the measuring resistor is connected between the power supply end and the drain electrode of the field effect transistor, two ends of the measuring resistor are connected with a differential operational amplifier, and the differential operational amplifier is electrically connected with the grid voltage control unit. When the power supply end outputs current, voltage drop is generated on the measuring resistor, the voltage drop is in direct proportion to the magnitude of the current, the amplified voltage drop signal is amplified and sent to the grid voltage control unit through the differential operational amplifier, and the grid voltage control unit calculates the current according to the amplified voltage drop signal and compares the current with a set current threshold value. If the current measured by the current detection circuit does not exceed a set current threshold, the voltage output end of the grid voltage control unit outputs a first grid voltage; and if the current measured by the current detection circuit exceeds a set current threshold, the voltage output end of the grid voltage control unit outputs a second grid voltage lower than the first grid voltage.
The grid of the field effect tube is electrically connected with the voltage output end of the grid voltage control unit through the grid driving circuit; the grid driving circuit is controlled to be connected to the grid voltage control unit; the grid voltage control unit controls the on-off of the grid driving circuit, so that the on-off of the field effect transistor is controlled. In a specific implementation process, the power supply end is electrically connected with a voltage monitoring circuit, the voltage monitoring circuit is used for monitoring the voltage range of the power supply end, the voltage monitoring circuit is electrically connected with the grid voltage control unit, and the grid voltage control unit controls the grid driving circuit according to signals of the voltage monitoring circuit. The voltage monitoring circuit comprises two divider resistors which are connected in series between a power supply end and a ground signal, one input end of a first comparator and one input end of a second comparator are electrically connected between the two divider resistors, the other input end of the first comparator and the other input end of the second comparator are respectively electrically connected with a first reference voltage and a second reference voltage, the first reference voltage is set according to a first voltage threshold, the second reference voltage is set according to a second voltage threshold, and the outputs of the first comparator and the second comparator are electrically connected with a grid voltage control unit. And the grid voltage control unit judges the range of the power supply voltage of the power supply end according to the output of the first comparator and the second comparator. In the application, the grid voltage control unit determines whether the voltage of the power supply end is greater than a first voltage threshold and smaller than a second voltage threshold, and if the voltage of the power supply end is between the first voltage threshold and the second voltage threshold, the grid voltage control unit controls the grid driving circuit to provide the first grid voltage or the second grid voltage for the grid of the field effect transistor, so that the field effect transistor is conducted; otherwise, the grid voltage control unit controls the grid driving circuit to provide a low-level signal for the grid of the field effect transistor, so that the field effect transistor is turned off.
The difference between this embodiment and embodiment 1 is that a temperature detection circuit is disposed at the fet for measuring the temperature of the fet, the temperature detection circuit is electrically connected to the gate voltage control unit, and the gate voltage control unit outputs the first gate voltage or the second gate voltage according to the temperature value of the temperature detection circuit. In a specific implementation process, the temperature detection circuit comprises a thermistor arranged near the field-effect tube, the thermistor is electrically connected with a temperature monitoring unit, the temperature monitoring unit measures the temperature of the field-effect tube through the thermistor, and the temperature monitoring unit is electrically connected with the grid voltage control unit and transmits the temperature to the grid voltage control unit. The grid voltage control unit judges whether the temperature detected by the temperature detection circuit exceeds a set temperature threshold value, if the temperature detected by the temperature detection circuit exceeds the set temperature threshold value, the grid voltage control unit outputs a third grid voltage lower than the first grid voltage, and if the temperature detected by the temperature detection circuit does not exceed the set temperature threshold value, the grid voltage control unit outputs the first grid voltage.
Example 3
Referring to fig. 6, in this embodiment, a hot plug protection method is provided, where a gate driving voltage of a field effect transistor is controlled according to a supply current collected by a current detection circuit when the field effect transistor is turned on to work, so as to ensure that the field effect transistor always works in an SOA interval, and the specific process includes:
and S1, the current detection circuit collects the power supply current and sends the power supply current to the grid voltage control unit.
And S2, the grid voltage control unit judges whether the power supply current exceeds a set current threshold, if not, executing S3, and if so, executing S4.
And S3, the grid voltage control unit outputs a first grid voltage to drive the grid of the field effect transistor.
And S4, the grid voltage control unit outputs a second grid voltage to drive the grid of the field effect transistor. The second gate voltage is less than the first gate voltage.
The embodiment provides the hot plug protection method, and can also control the on and off of the field effect transistor according to the power supply voltage of the power supply terminal, referring to fig. 7, the specific process includes:
s10, the voltage monitoring circuit monitors the range of the voltage of the power supply.
S20, the voltage monitoring circuit sends the monitoring result to a grid voltage control unit, and the grid voltage control unit determines whether the voltage of the power supply terminal is larger than a first voltage threshold value and smaller than a second voltage threshold value; if so, step S30 is performed, and if not, step S40 is performed.
And S30, the grid voltage control unit controls the grid driving circuit to provide a first grid voltage or a second grid voltage for the grid of the field effect transistor, so that the field effect transistor is conducted.
And S40, the grid voltage control unit controls the grid drive circuit to provide low level, so that the field effect transistor is turned off.
Example 4
Referring to fig. 8, in this embodiment, a hot plug protection method is provided, where a gate driving voltage of a field effect transistor is controlled according to a supply current collected by a current detection circuit and a temperature collected by a temperature detection circuit when the field effect transistor is turned on to work, so as to ensure that the field effect transistor always works in an SOA interval, and a specific process includes:
and S100, the current detection circuit collects the temperature of the field effect transistor detected by the power supply current temperature detection circuit and sends the temperature to the grid voltage control unit.
S200, the grid voltage control unit judges whether the power supply current exceeds a set current threshold, if not, the step S400 is executed, and if so, the step S300 is executed.
S300, the grid voltage control unit outputs a second grid voltage to drive the grid of the field effect transistor.
S400, the grid voltage control unit judges whether the temperature exceeds a set temperature threshold value, if so, S500 is executed, otherwise, S600 is executed.
S500, the grid voltage control unit outputs a third grid voltage lower than the first grid voltage.
S600, the grid voltage control unit outputs a first grid voltage.
The embodiment provides the hot plug protection method, which can also control the on and off of the field effect transistor according to the power supply voltage of the power supply terminal, and the specific process includes:
the voltage monitoring circuit monitors the range of the voltage of the power supply.
The voltage monitoring circuit sends a monitoring result to a grid voltage control unit, and the grid voltage control unit determines whether the voltage of the power supply terminal is greater than a first voltage threshold and smaller than a second voltage threshold;
if so, the grid voltage control unit controls the grid driving circuit to provide a first grid voltage or a second grid voltage for the grid of the field effect tube, so that the field effect tube is conducted.
If not, the grid voltage control unit controls the grid driving circuit to provide low level, so that the field effect tube is turned off.
Example 5
This embodiment provides a hot plug controller that inherits the hot plug control circuit described in embodiment 1 or embodiment 2.
The hot plug controller is provided with a memory, the memory is used for storing the measurement data of the current detection circuit and the voltage monitoring circuit or the measurement data of the current detection circuit, the voltage monitoring circuit and the temperature detection circuit, and the memory is also used for storing the state of the hot plug control circuit.
The hot plug controller is provided with an external communication module and a corresponding interface, the upper controller is connected with the external communication module and the interface, and the upper controller transmits the memory measurement data and the state of the hot plug control circuit.
This application utilizes current detection unit detects supply current, and when supply current exceeded and sets for the electric current threshold value, grid voltage control unit output lower second grid voltage relatively comes drive field effect transistor, limits field effect transistor drain current through the grid voltage that reduces field effect transistor to when guaranteeing that faults such as taking place the short circuit produce the heavy current, field effect transistor is worked all the time in the SOA, can not burnt out.
This application utilizes temperature detection circuit detects field effect transistor's temperature and sends for gate control unit, gate voltage control unit judges whether the temperature surpasss the temperature threshold value of settlement, if surpass the temperature threshold value of settlement, gate voltage control unit output relatively lower third gate voltage limits drain current through the gate voltage that reduces field effect transistor, reduces field effect transistor's consumption.
The voltage monitoring circuit is used for monitoring the voltage condition of the power supply end, and when the voltage of the power supply end is stabilized between a first voltage threshold and a second voltage threshold, the grid voltage control unit controls the grid driving circuit to provide driving voltage for the grid of the field effect transistor, so that the power supply end charges the energy storage capacitor and then supplies power to the load end; when the voltage of the power supply end does not stably reach the first voltage threshold or exceeds the second voltage threshold, the grid voltage control unit controls the grid driving circuit to enable the field effect tube to be turned off in time, and the influence of abnormal power supply of the power supply end on the load end is avoided.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A hot-plug protection circuit is characterized by comprising at least one field effect transistor arranged between a power supply end and a load end,
a current detection circuit is arranged between the power supply end and the drain electrode of the field effect tube and is used for measuring the power supply current of the power supply end; the current detection circuit is electrically connected with the grid voltage control unit;
the grid of the field effect tube is electrically connected with the voltage output end of the grid voltage control unit through the grid driving circuit; the grid driving circuit is controlled to be connected to the grid voltage control unit; the current detection circuit collects power supply current, the grid voltage control unit judges whether the power supply current exceeds a set current threshold value, if not, the grid voltage control unit outputs a first grid voltage, and if the power supply current exceeds the set current threshold value, the grid voltage control unit outputs a second grid voltage lower than the first grid voltage; the grid voltage control unit controls the on and off of the grid driving circuit;
and the source electrode of the field effect transistor is electrically connected with an energy storage capacitor which is grounded, and the energy storage capacitor supplies voltage to the load end.
2. The hot swap protection circuit of claim 1, wherein the power supply terminal is electrically connected to a voltage monitoring circuit, the voltage monitoring circuit is configured to monitor a voltage range of the power supply terminal, the voltage monitoring circuit is electrically connected to the gate voltage control unit, and the gate voltage control unit controls the gate driving circuit according to a signal from the voltage monitoring circuit.
3. The hot swap protection circuit of claim 2, wherein the gate voltage control unit determines whether the voltage at the power supply is greater than a first voltage threshold and less than a second voltage threshold, and if so, the gate voltage control unit controls the gate driver circuit to provide the first gate voltage or the second gate voltage to the gate of the fet; otherwise, the grid voltage control unit controls the grid driving circuit to turn off the field effect transistor.
4. The hot plug protection circuit according to claim 1, wherein a temperature detection circuit is disposed at the fet for measuring a temperature of the fet, the temperature detection circuit is electrically connected to the gate voltage control unit, and the gate voltage control unit outputs the first gate voltage or the second gate voltage according to a temperature value of the temperature detection circuit.
5. The hot swap protection circuit of claim 4, wherein the gate voltage control unit determines whether the temperature detected by the temperature detection circuit exceeds a predetermined temperature threshold, and if the temperature detected by the temperature detection circuit exceeds the predetermined temperature threshold, the gate voltage control unit outputs a third gate voltage lower than the first gate voltage, and if the temperature detected by the temperature detection circuit does not exceed the predetermined temperature threshold, the gate voltage control unit outputs the first gate voltage.
6. The hot plug protection circuit according to claim 1, wherein the current detection circuit comprises a measurement resistor, the measurement resistor is connected between the power supply terminal and the drain of the fet, two ends of the measurement resistor are connected to a differential operational amplifier, and the differential operational amplifier is electrically connected to the gate voltage control unit.
7. The hot swap protection circuit of claim 3, wherein the voltage monitoring circuit comprises a plurality of voltage dividing resistors connected in series between a power supply terminal and a ground signal, the voltage dividing resistors are electrically connected to one input terminals of a first comparator and a second comparator, the other input terminals of the first comparator and the second comparator are electrically connected to a first reference voltage and a second reference voltage, respectively, the first reference voltage is set according to the first voltage threshold, the second reference voltage is set according to the second voltage threshold, and outputs of the first comparator and the second comparator are electrically connected to the gate voltage control unit.
8. A hot plug protection method is characterized by comprising the following steps:
the current detection circuit collects the power supply current and sends the power supply current to the grid voltage control unit;
the grid voltage control unit judges whether the power supply current exceeds a set current threshold value;
if the set current threshold value is not exceeded, the grid voltage control unit outputs a first grid voltage to drive the grid of the field effect transistor;
and if the set current threshold value is exceeded, the grid voltage control unit outputs a second grid voltage to drive the grid of the field effect tube.
9. A hot plug protection method according to claim 8,
the voltage monitoring circuit monitors the range of the voltage of the power supply;
the voltage monitoring circuit sends a monitoring result to a grid voltage control unit, and the grid voltage control unit determines whether the voltage of the power supply terminal is greater than a first voltage threshold and smaller than a second voltage threshold;
if yes, the grid voltage control unit controls the grid driving circuit to provide a first grid voltage or a second grid voltage for the grid of the field effect transistor;
otherwise, the grid voltage control unit controls the grid driving circuit to turn off the field effect transistor.
10. A hot plug protection method according to claim 8,
the temperature detection circuit detects the temperature of the field effect tube and sends the temperature to the grid voltage control unit,
the grid voltage control unit judges whether the temperature exceeds a set temperature threshold value,
if so, the gate voltage control unit outputs a third gate voltage lower than the first gate voltage,
otherwise, the gate voltage control unit outputs a first gate voltage.
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