CN111244883B - SiC MOSFET short-circuit protection circuit and protection method for comprehensively comparing grid charge and voltage - Google Patents
SiC MOSFET short-circuit protection circuit and protection method for comprehensively comparing grid charge and voltage Download PDFInfo
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- 238000012545 processing Methods 0.000 claims abstract description 34
- 239000003990 capacitor Substances 0.000 claims description 10
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 57
- 229910010271 silicon carbide Inorganic materials 0.000 description 56
- 238000001514 detection method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses a SiC MOSFET short-circuit protection circuit and a protection method for comprehensively comparing grid charge and voltage, wherein the circuit comprises a logic processing circuit, a grid charge comparison circuit, a grid voltage comparison circuit and a drive circuit; judging whether the SiC MOSFET is short-circuited or not by comparing logic signals output by the grid charge comparison circuit and the grid voltage comparison circuit; when short circuit occurs, the grid voltage comparison circuit and the grid charge comparison circuit output high levels successively, and the logic circuit clamps the grid of the SiC MOSFET to driving negative pressure, so that the switching tube is quickly turned off, and short-circuit current is inhibited before the switching tube is completely turned on. The invention reduces the damage of short-circuit fault to the device, does not influence the performance advantage of the SiC MOSFET to play a high-speed switch, and ensures that the normal work of the SiC MOSFET is not influenced.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a SiC MOSFET short-circuit protection circuit and a protection method for comprehensively comparing grid charges and voltages.
Background
Compared with the traditional silicon (Si) device, the silicon carbide (SiC) device has the characteristics of wider forbidden bandwidth, higher heat conductivity, higher critical field intensity and higher saturated electron transfer rate, reduced conduction voltage, high switching speed, high temperature resistance and high pressure resistance, and has great application prospect in the fields of aerospace, hybrid electric vehicles, solar inverters, power factor correction, UPS and motor driving.
However, in practical applications, on one hand, the power device inevitably operates in an abnormal operating state such as overload and short circuit, and the protection circuit has a certain delay from the detection of the operation, which requires that the power device has a certain overload and short circuit capability, i.e. can endure a certain fault time. Meanwhile, the protection circuit must clear the fault within the time that the power device can withstand the fault to avoid damage to the power device. On the other hand, due to the structure of the device, the thickness of the gate oxide layer of the SiC MOSFET is thinner than that of the Si MOSFET, and the interface stability of the oxide layer is lower during short-circuit fault, so that the long-term reliable work of the SiC MOSFET is not facilitated. In addition, the SiC MOSFET has small tube core area, large current density, weaker short-circuit capability and shorter short-circuit bearing time, and brings great challenges to the SiC MOSFET short-circuit protection design.
One of the traditional short-circuit protection methods is to detect the drain-source voltage of the SiC MOSFET, and under normal conditions, the drain-source voltage drops to the saturation voltage slowly, so that a longer blanking time is required to detect the hard switch fault by using the method. The second conventional short-circuit protection method is a drain current monitoring method, but because a current sensor such as a current transformer is needed, the bandwidth of current detection is limited, and the method is not an economical and effective method. The methods have the defects of lower precision, prolonged fault duration and incapability of timely switching off the power device while detecting the short-circuit fault of the SiC MOSFET, and have limited practical application value.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problems of low precision, long reaction time, high cost and the like in the prior art, the invention provides a SiC MOSFET short-circuit protection circuit and a protection method for comprehensively comparing grid charges and voltages.
The technical scheme is as follows: the invention provides a SiC MOSFET short-circuit protection circuit for comprehensively comparing grid charge and voltage, which is applied to detecting whether a SiC MOSFET is short-circuited or not in the opening process of the SiC MOSFET.
The input end of the grid voltage comparison circuit is connected with the grid of the SiC MOSFET, and the output end of the grid voltage comparison circuit is connected with the first input end of the logic processing circuit; the first input end of the grid charge comparison circuit is connected with the grid of the SiC MOSFET; the second input end is connected with the output end of the driving circuit; the output end of the grid charge comparison circuit is connected with the second input end of the logic processing circuit; the output end of the logic processing circuit is connected with the input end of the driving circuit;
the grid electrode charge comparison circuit amplifies the driving current on the grid electrode of the SiC MOSFET, performs integral operation, compares the output of the integral operation with a first preset voltage, and outputs a logic control signal to the logic processing circuit; the grid voltage comparison circuit compares the grid voltage of the SiC MOSFET with a second preset voltage and outputs a logic control signal to the logic processing circuit; the logic processing circuit judges whether the SiC MOSFET is short-circuited or not according to the received logic control signal, and if the SiC MOSFET is short-circuited, the logic processing circuit controls the driving circuit to output low level so as to control the turn-off of the SiC MOSFET through the driving circuit; and if the short circuit does not exist, controlling the driving circuit to output high level to ensure the normal operation of the SiC MOSFET.
Further, the gate charge comparison circuit includes: the circuit comprises a driving resistor, first to fifth resistors, a first operational amplifier, a second operational amplifier, a first capacitor and a first comparator; one end of the driving resistor is used as a second input end of the grid charge comparison circuit and is connected with the output end of the driving circuit and one end of the first resistor, and the other end of the driving resistor is used as a first input end of the grid charge comparison circuit and is connected with the grid of the SiC MOSFET and one end of the second resistor; the other end of the first resistor is connected with the negative input end of the first operational amplifier and one end of the fourth resistor; the other end of the second resistor is connected with the positive input end of the first operational amplifier and one end of the third resistor; the other end of the third resistor is grounded; the other end of the fourth resistor and the output end of the first operational amplifier are both connected with one end of a fifth resistor; the other end of the fifth resistor is connected with one end of the first capacitor and the negative input end of the second operational amplifier; the positive input end of the second operational amplifier is grounded; the other end of the first capacitor and the output end of the second operational amplifier are both connected with the negative input end of the first comparator; the positive input end of the first comparator is connected with a first preset voltage; and the output end of the first comparator is used as the output end of the grid charge comparison circuit and is connected with the second input end of the logic processing circuit.
Further, the gate voltage comparison circuit comprises a second comparator; the positive input end of the second comparator is connected with the grid electrode of the SiC MOSFET, and the negative input end of the second comparator is connected with a second preset voltage; the output end is connected with the first input end of the driving circuit.
Further, the logic processing circuit comprises: the first and second AND gates, the first and second NOT gates and the first and second NOR gates; the first input end of the second AND gate is the first input end of the logic processing circuit, and the second input end is the second input end of the logic processing circuit; the output end of the second AND gate is connected with the second input end of the second NOR gate; the first input end of the second NOR gate is connected with the output end of the first NOR gate; the output end of the second NOR gate is connected with the second input end of the first NOR gate; the output end of the first NOR gate is connected with the input end of the second NOR gate; the output end of the second NOT gate is connected with the second input end of the first AND gate; the output end of the first AND gate is the output end of the logic processing circuit; the first input end of the first AND gate is connected with the PWM driving signal input to the SiC MOSFET and the input end of the first NOT gate; the output terminal of the first not gate is connected with the first input terminal of the first nor gate.
Further, the driving circuit includes: a first and a second switching tube; the first open tube is an NPN type triode or an NMOS tube; when the first switch tube adopts an NPN type triode, the second switch tube adopts a PNP type triode; when the first switch tube adopts an NMOS tube, the second switch tube adopts a PMOS tube; the collector/drain electrode of the first switching tube is connected with the positive power supply; the base electrode/grid electrode of the first switching tube is used as the input end of the driving circuit and is connected with the base electrode/grid electrode of the second switching tube; the emitter/source electrode of the first switching tube is used as the output end of the driving circuit and is connected with the emitter/source electrode of the second switching tube; the collector/drain of the second switch tube is connected with the negative power supply.
The protection method of the SiC MOSFET short-circuit protection circuit comprehensively comparing the grid charge and the voltage is characterized in that when the SiC MOSFET has a hard switch fault, the drive current is continuously output at the moment of switching on, the drive charge is accumulated and increased, the grid voltage comparison circuit outputs a high level, the grid charge comparison circuit outputs a high level, and the logic control circuit judges that the SiC MOSFET has a short circuit through the input logic signal, so that the drive circuit outputs a low level and the disconnection of the SiC MOSFET is accelerated.
Has the advantages that:
(1) when the hard switch fails, the grid voltage and grid charge comparison circuit transmits a signal to the logic circuit, and the logic circuit judges that the power tube is turned off quickly after the failure occurs, so that misconduction caused by crosstalk voltage is prevented;
(2) by comparing the gate voltage and the logic sequence of the gate charge with the preset value, the comparison result is used as a power tube short circuit judgment basis, and the situation that the judgment basis is too few to cause misjudgment in the traditional mode can be avoided;
(3) the invention can effectively improve the reliability of the circuit and prolong the service life of the device.
Drawings
FIG. 1 is a SiC MOSFET short circuit protection circuit of the present invention;
FIG. 2 is a graph of gate voltage and gate charge waveforms for normal ON and hard switch short circuit faults in accordance with the present invention;
FIG. 3 is a typical waveform for a SiC MOSFET of the present invention when it is normally on;
fig. 4 is a typical waveform for a SiC MOSFET on a hard-switched short circuit fault in accordance with the present invention.
Detailed Description
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention.
As shown in problem 1, the present embodiment provides a SiC MOSFET short-circuit protection circuit that comprehensively compares gate charges and voltages, including: logic processing circuit, grid charge comparison circuit, grid voltage comparison circuit and drive circuit. The maximum gate voltage of the SiC mosfet in this example is 18V.
The logic processing circuit comprises: first AND gate UAND1First NOT gate UINV1And a second NOT gate UINV2A first NOR gate UNOR1A second NOR gate UNOR2And a second AND gate UAND2. Wherein, the first AND gate UAND1First input terminal, PWM driving signal output terminal and first NOT gate UINV1Input end connected to the first AND gate UAND1Second input terminal and second not gate UINV2Is connected with the output end of the first AND gate UAND1Is connected with the input end of the driving circuit. First NOT gate UINV1And the first nor gate UNOR1Is connected to the first input terminal. Second NOT gate UINV2And a first nor gate UNOR1Output terminal of the first nor gate UNOR2Is connected to a first input terminal of a first NOR gate UNOR1Second input terminal and second nor gate UNOR2Are connected with each other. Second AND gate UAND2Is connected with the output end of the grid charge comparison circuit, and a second AND gate UAND2A first input terminal of the first and second AND gate is connected with an output terminal of the grid voltage comparison circuitAND2And the output terminal of the second NOR gate UNOR2Is connected to the second input terminal.
The gate charge comparison circuit includes: drive resistor RGFirst resistance R1A second resistance R2First operational amplifier UOPA1A third resistor R3Fourth resistor R4Fifth resistor R5A second operational amplifier UOPA2A first capacitor C1First comparator UCOMP1A predetermined equivalent charge source Qref(the preset equivalent charge source is a first preset voltage, which is 3V in this embodiment); drive resistor RGOne end of the first resistor R, the output end of the driving circuit1One end of the resistor is connected with a driving resistor RGAnd the other end of the first resistor R is connected with the grid electrode of the SiC MOSFET and the second resistor R2One end is connected. A first operational amplifier UOPA1Negative input terminal and first resistor R1The other end of the resistor R and a fourth resistor R4One end connected to a first operational amplifier UOPA1Positive input end of and the second resistor R2The other end of the resistor R, and a third resistor R3One end connected to a first operational amplifier UOPA1And the output end of the fourth resistor R4The other end of the resistor R and a fifth resistor R5One terminal, a third resistor R3The other end is connected with the ground. Second operational amplifier UOPA2Negative input terminal and fifth resistor R5The other end of the first capacitor C1One end connected to a second operational amplifier UOPA2Is connected to ground, a second operational amplifier UOPA2And the negative input end of the first comparator and the first capacitor C1The other end is connected with the positive input end of the first comparator and a preset equivalent charge source QrefPositive pole connected to preset equivalent charge source QrefThe negative pole is connected with the ground, the output end of the first comparator is connected with a second AND gate U in the logic processing circuitAND2Is connected to the second input terminal.
The gate voltage comparison circuit includes: second comparator UCOMP2A second preset voltage Uref(the second preset voltage is 12.8V in this embodiment). Second comparator UCOMP2Negative input terminal and preset voltage source UrefThe positive electrodes are connected with a preset voltage source UrefNegative pole connected to ground, second comparator UCOMP2Is connected with the grid of the SiC MOSFET, and a second comparator UCOMP2And a second AND gate U in the logic processing circuitAND2Is connected to the first input terminal.
The drive circuit includes: first switch tube Q1A second switch tube Q2. When the first switch tube adopts an NPN type triode, the second switch tube adopts a PNP type triode; when the first switch tube adopts an NMOS tube, the second switch tube adopts a PMOS tube; first switch tube Q1Collector electrode (drain)Pole) connected to the driving positive power source VCC, the first switch tube Q1Base electrode (grid electrode) and second switch tube Q2The base electrode (grid electrode) of the logic processing circuit is connected with the output end of a first AND gate of the logic processing circuit, and a first switching tube Q1Emitter (source) and second switch tube Q2Emitter (source) and drive resistor R in gate charge comparison circuitGIs connected to one end of a second switching tube Q2Is connected to the driving negative power supply VEE.
A protection method of a SiC MOSFET short-circuit protection circuit comprehensively comparing grid charges and voltages specifically combines the working principle of fig. 2, fig. 3 and fig. 4 to analyze.
First operational amplifier U in grid charge comparison circuitOPA1And a first resistor R1A second resistor R2A third resistor R3A fourth resistor R4Form a proportional amplifier circuit, drive resistor RGThe voltage drop is amplified and input by a second operational amplifier UOPA2A fifth resistor R5A first capacitor C1An integrating circuit formed by the above-mentioned two elements and outputting a voltage Q equivalent to the charge amountG. First comparator UCOMP1Comparing drive charge QGAnd a predetermined equivalent charge value QrefAt the same time, the grid voltage compares the second comparator U in the circuitCOMP1Comparing the SiC MOSFET gate voltage UGAnd a second predetermined voltage Uref。
In the normal turn-on process of the SiC MOSFET, the SiC MOSFET enters a saturation region from a cut-off region and then enters a linear region, and the grid voltage UGAnd gate charge QGAs shown in fig. 2 (the drive voltage charges the gate of the SiC MOSFET via the drive resistor, the gate charge QGContinuously accumulated, gate voltage UGSAnd is continuously raised. SiC MOSFET gate charge up to Q1Then enter into Miller platform with corresponding gate voltage of Umiller1(ii) a The gate charge rises to Q3When the Miller stage is over, the corresponding gate voltage is Umiller2(ii) a The gate charge is Q when the SiC MOSFET is completely turned on4Corresponding to a gate voltage of UD). Gate voltage U during turn-on due to parasitic capacitanceGMiller plateaus may occur, as in FIG. 3 (U)DSIs a drain-source voltage, UGSIs a gate-source voltage, IDIs the drain current. And entering a stage 1 when the gate of the SiC MOSFET starts to be charged, entering the Miller platform SiC MOSFET to start to be conducted in a stage 2, exiting the Miller platform SiC MOSFET to be basically conducted in a stage 3, and finishing the complete conduction of the SiC MOSFET in the stage 3. ). The presence of Miller plateaus such that the gate voltage U of the SiC MOSFETGThe slope becomes gentle during the rise to drive the charge QGFirst, a preset equivalent charge Q is achievedrefAt this time, the gate charge comparing circuit outputs a low level. Grid voltage comparison circuit for SiC MOSFET grid voltage UGNot reach UrefAnd outputs a low level.
Second AND gate U in logic processing circuitAND2The first input end and the second input end are both low level and output low level. First NOR gate UNOR1And a second NOR gate UNOR2Forming an RS trigger, inputting low level at an S input end, inputting a driving signal at an R end, and inputting a low level at a Q output end through a second NOT gate UINV2Output high level to the first AND gate UAND1The drive signal is enabled.
When the SiC MOSFET is completely switched on, the gate voltage U of the SiC MOSFETGTo reach UrefAnd outputs a high level. Second AND gate UAND2The first input terminal of (1) is at high level, the second input terminal is at low level, and the low level is still output. Through a first NOR gate UNOR1And a second NOR gate UNOR2After forming the RS trigger, the high level is output to the first AND gate UAND1And the original driving signal is not influenced.
The logic control circuit judges whether short circuit occurs or not by comparing the levels output by the grid charge comparison circuit and the grid voltage comparison circuit, and if the short circuit occurs, the logic control circuit enables the driving circuit to output low level to accelerate the turn-off of the SiC MOSFET, so that the short circuit fault of the hard switch is restrained.
When the SiC MOSFET has hard switch failure, the switch-on moment enters a saturation region from a cut-off region and keeps working in the saturation region, and the grid voltage UGAnd gate charge QGThe variation of (c) is as in fig. 2. The driving voltage passes through the pair of driving resistorsCharging the SiC MOSFET gate, gate charge QGContinuously accumulated, gate voltage UGSAnd is continuously raised. SiC MOSFET gate charge up to Q1While the corresponding gate voltage is Umiller1. But does not enter the miller plateau and the gate charge continues to rise to Q2To the maximum gate voltage UD. Due to the short circuit of the drain and source of the SiC MOSFET, the miller plateau is no longer present, as in fig. 4. Gate voltage U of SiC MOSFETGThe slope is not changed in the rising process, and the grid voltage is compared with the grid voltage U in the circuitGFirst reaches UrefAnd outputs a high level. Drive charge QGNot reaching the predetermined equivalent charge QrefThe gate charge comparison circuit outputs a high level.
Second AND gate U in logic processing circuitAND2The first input end and the second input end are both high level and output high level. First NOR gate UNOR1And a second NOR gate UNOR2The RS trigger is composed of a second AND gate UAND2 outputting high level to the S input end, the R end input drive signal is still low level, the Q output end signal is high level, and the high level passes through a second NOT gate UINV2Output low level to the first AND gate UAND1And the driving signal is turned off. The short-circuit current is suppressed and the short-circuit protection circuit of the SiC MOSFET becomes effective.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.
Claims (5)
1. A SiC MOSFET short-circuit protection circuit for comprehensively comparing grid charge and voltage is applied to detecting whether a SiC MOSFET is short-circuited or not in the opening process of the SiC MOSFET and is characterized by comprising a logic processing circuit, a grid charge comparison circuit, a grid voltage comparison circuit and a driving circuit;
the input end of the grid voltage comparison circuit is connected with the grid of the SiC MOSFET, and the output end of the grid voltage comparison circuit is connected with the first input end of the logic processing circuit; the first input end of the grid charge comparison circuit is connected with the grid of the SiC MOSFET; the second input end is connected with the output end of the driving circuit; the output end of the grid charge comparison circuit is connected with the second input end of the logic processing circuit; the output end of the logic processing circuit is connected with the input end of the driving circuit;
the grid electrode charge comparison circuit amplifies the driving current on the grid electrode of the SiC MOSFET, performs integral operation, compares the output of the integral operation with a first preset voltage, and outputs a logic control signal to the logic processing circuit; the grid voltage comparison circuit compares the grid voltage of the SiC MOSFET with a second preset voltage and outputs a logic control signal to the logic processing circuit; the logic processing circuit judges whether the SiC MOSFET is short-circuited or not according to the received logic control signal, and if the SiC MOSFET is short-circuited, the logic processing circuit controls the driving circuit to output low level so as to control the turn-off of the SiC MOSFET through the driving circuit; if no short circuit exists, the driving circuit is controlled to output high level to ensure the normal operation of the SiC MOSFET;
the gate charge comparison circuit includes: the circuit comprises a driving resistor, first to fifth resistors, a first operational amplifier, a second operational amplifier, a first capacitor and a first comparator; one end of the driving resistor is used as a second input end of the grid charge comparison circuit and is connected with the output end of the driving circuit and one end of the first resistor, and the other end of the driving resistor is used as a first input end of the grid charge comparison circuit and is connected with the grid of the SiC MOSFET and one end of the second resistor; the other end of the first resistor is connected with the negative input end of the first operational amplifier and one end of the fourth resistor; the other end of the second resistor is connected with the positive input end of the first operational amplifier and one end of the third resistor; the other end of the third resistor is grounded; the other end of the fourth resistor and the output end of the first operational amplifier are both connected with one end of a fifth resistor; the other end of the fifth resistor is connected with one end of the first capacitor and the negative input end of the second operational amplifier; the positive input end of the second operational amplifier is grounded; the other end of the first capacitor and the output end of the second operational amplifier are both connected with the negative input end of the first comparator; the positive input end of the first comparator is connected with a first preset voltage; and the output end of the first comparator is used as the output end of the grid charge comparison circuit and is connected with the second input end of the logic processing circuit.
2. The integrated contrast gate charge and voltage SiC MOSFET short-circuit protection circuit of claim 1, wherein the gate voltage comparison circuit comprises a second comparator; the positive input end of the second comparator is connected with the grid electrode of the SiC MOSFET, and the negative input end of the second comparator is connected with a second preset voltage; the output end is connected with the first input end of the driving circuit.
3. The integrated comparative gate charge and voltage SiC MOSFET short-circuit protection circuit of claim 1 wherein the logic processing circuit comprises: the first and second AND gates, the first and second NOT gates and the first and second NOR gates; the first input end of the second AND gate is the first input end of the logic processing circuit, and the second input end is the second input end of the logic processing circuit; the output end of the second AND gate is connected with the second input end of the second NOR gate; the first input end of the second NOR gate is connected with the output end of the first NOR gate; the output end of the second NOR gate is connected with the second input end of the first NOR gate; the output end of the first NOR gate is connected with the input end of the second NOR gate; the output end of the second NOT gate is connected with the second input end of the first AND gate; the output end of the first AND gate is the output end of the logic processing circuit; the first input end of the first AND gate is connected with the PWM driving signal input to the SiC MOSFET and the input end of the first NOT gate; the output terminal of the first not gate is connected with the first input terminal of the first nor gate.
4. The integrated contrast gate charge and voltage SiC MOSFET short-circuit protection circuit of claim 1, wherein the drive circuit comprises: a first and a second switching tube; the first switch tube is an NPN type triode or an NMOS tube; when the first switch tube adopts an NPN type triode, the second switch tube adopts a PNP type triode; when the first switch tube adopts an NMOS tube, the second switch tube adopts a PMOS tube; the collector/drain electrode of the first switching tube is connected with the positive power supply; the base electrode/grid electrode of the first switching tube is used as the input end of the driving circuit and is connected with the base electrode/grid electrode of the second switching tube; the emitter/source electrode of the first switching tube is used as the output end of the driving circuit and is connected with the emitter/source electrode of the second switching tube; the collector/drain of the second switch tube is connected with the negative power supply.
5. The protection method of the SiC MOSFET short-circuit protection circuit for comprehensively comparing the gate charge and the voltage according to claim 1, wherein when the SiC MOSFET is in a turn-on process and the SiC MOSFET has a hard switch failure, a drive current is continuously output at a turn-on instant, the drive charge is accumulated and increased, the gate voltage outputs a high level than the circuit, the gate charge comparison circuit outputs a high level, and the logic control circuit judges that the SiC MOSFET is short-circuited by an input logic signal, so that the drive circuit outputs a low level and accelerates the turn-off of the SiC MOSFET.
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| CN111697800A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Drive circuit suitable for SiC MOSFET is parallelly connected |
| CN112039506B (en) * | 2020-07-28 | 2023-08-08 | 西安电子科技大学 | Driving integrated circuit of SiC MOSFET switching device |
| CN112332474A (en) * | 2020-10-19 | 2021-02-05 | 西安电子科技大学芜湖研究院 | Short circuit control method, system, medium and application of silicon carbide charging power supply |
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