CN104467754A - MOSFET driver with short pulse suppressing function - Google Patents
MOSFET driver with short pulse suppressing function Download PDFInfo
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- CN104467754A CN104467754A CN201410810120.8A CN201410810120A CN104467754A CN 104467754 A CN104467754 A CN 104467754A CN 201410810120 A CN201410810120 A CN 201410810120A CN 104467754 A CN104467754 A CN 104467754A
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Abstract
The invention relates to an MOSFET driver, in particular to the MOSFET driver with a short pulse suppressing function. The MOSFET driver with the short pulse suppressing function comprises a pulse suppressing unit, and the pulse suppressing unit is connected with a pulse input end and a fault signal input end. The pulse suppressing unit is connected with the grid electrode of an MOS transistor, and the drain electrode of the MOS transistor is connected with a pulse output end. The pulse suppressing unit comprises a clock submodule, a pulse width detection submodule, a fault processing submodule and a signal output submodule. By the adoption of the structure, the pulse suppressing unit is used for detecting the width of input pulses, short pulses are suppressed, and meanwhile the pulse suppressing unit can detect the short-circuit state of an MOSFET in real time and implement protection.
Description
Technical field
The present invention relates to a kind of mosfet driver, particularly a kind of mosfet driver with short pulse suppression function.
Background technology
Metal-oxide layer semiconductcor field effect transistor, being called for short metal-oxide half field effect transistor is a kind of field-effect transistor that can be widely used in analog circuit and digital circuit.MOSFET is different according to the polarity of its " passage ", and can be divided into two types of " N-type " and " P type ", be usually also called NMOSFET and PMOSFET, other abbreviations still comprise NMOS, PMOS etc.
Along with the development of power electronic technology, power electronic device is constantly updated, and the performance of power MOSFET device is promoted fast.Current MOSFET instead of traditional transistor becomes major power device in mesolow current transformer.But modern MOSFET may cause concussion tempestuously and very high peak voltage under short pulsed drive.Therefore, in the drive circuit of MOSFET, the identification of pulse-width and disposal ability just seem especially important.
Summary of the invention
The technical issues that need to address of the present invention are to provide a kind of mosfet driver with short pulse suppression function.
For solving above-mentioned technical problem, a kind of mosfet driver with short pulse suppression function of the present invention comprises pulse and suppresses unit, described pulse suppresses unit to be connected with metal-oxide-semiconductor grid, described metal-oxide-semiconductor drain electrode is connected with pulse output end, described pulse suppresses unit to comprise clock submodule, pulse duration detection sub-module, troubleshooting submodule and signal output sub-module
Described clock submodule is used for providing clock signal for each submodule;
Described pulse duration detection sub-module, for detecting the width of input pulse, when this pulse duration is less than setting width, this pulse will by filtering, and when pulse duration is more than or equal to set point, this pulse is delivered to described signal output sub-module by by harmless;
Described troubleshooting submodule, for detecting the fault-signal pulse that described comparator sends, the fault-signal pulse sent with the described comparator of detection, when there being low level pulse, output low level signal;
Described signal output sub-module, carries out synchronism output for the signal described pulse duration detection sub-module exported.
Further, described pulse suppresses unit to be connected with fault-signal input with pulse input end; Described pulse suppresses unit to be connected with comparator output terminal, described comparator reference input end is by resistance R1 ground connection, described comparator reference input is connected with power Vcc by constant-current source Is2, described comparator is compared input and is connected with power Vcc by constant-current source Is1, described comparator is compared input and is connected with diode D1 positive pole by resistance R2, and described diode D1 negative pole drains with metal-oxide-semiconductor Q1 and is connected; Described metal-oxide-semiconductor Q1 drain electrode is connected with pulse output end, and described metal-oxide-semiconductor Q1 grid is connected with amplifier out, and described pulse input end and pulse suppress unit to be connected, the source ground of described metal-oxide-semiconductor Q1.
Further, described constant-current source Is2 and Is1 is integrated low temp rising high precision DC constant current power supply.
Adopt after said structure, described in there is the mosfet driver of short pulse suppression function, utilize pulse processing unit to detect the width of input pulse; carry out suppression to short pulse to eliminate; meanwhile, this pulse processing unit can detect the short-circuit condition of MOSFET in real time, and can implement protection.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Fig. 1 is a kind of mosfet driver theory diagram with short pulse suppression of the present invention.
Fig. 2 is the theory diagram that pulse of the present invention suppresses unit.
Fig. 3 is mosfet driver input-output wave shape relation schematic diagram of the present invention.
In figure: 1 is pulse suppression unit, and 2 is pulse input end, and 3 is fault-signal input, and 4 is comparator, and 5 is amplifier, and 6 is pulse output end
101 is pulse duration detection sub-module, and 102 is clock submodule, and 103 is troubleshooting submodule, and 104 is signal output module
Embodiment
As shown in Figure 1, a kind of mosfet driver with short pulse suppression of the present invention comprises pulse and suppresses unit, and described pulse suppresses unit 1 to be connected with fault-signal input 3 with pulse input end 2.Described pulse suppresses unit to be connected with comparator 4 output, described comparator reference input end is by resistance R1 ground connection, described comparator reference input is connected with power Vcc by constant-current source Is2, described comparator is compared input and is connected with power Vcc by constant-current source Is1, described comparator is compared input and is connected with diode D1 positive pole by resistance R2, described diode D1 negative pole drains with metal-oxide-semiconductor Q1 and is connected, and diode D1 closes the high voltage of having no progeny and producing for blocking MOSFET.Like this by actual for MOSFET conducting voltage and MOSFET being compared with reference to conducting voltage, when the actual conducting voltage of MOSFET is greater than with reference to conducting voltage, described comparator 4 output low level suppresses unit 1 to pulse.Described metal-oxide-semiconductor Q1 drain electrode is connected with pulse output end, described metal-oxide-semiconductor Q1 grid is connected with amplifier 5 output, if be enlarged into for the current pulse signal suppressing unit 1 to send described pulse can the strong current pulse signal that turns on and off of driven MOS FET for amplifier 5.Described pulse input end and pulse suppress unit to be connected, the source ground of described metal-oxide-semiconductor Q1.Described pulse suppresses unit 1, for detecting the width of input pulse signal, exports the input of described amplifier after treatment to; Meanwhile, described pulse suppresses unit also to possess to detect MOSFET operating state, and the ability of externally controller transferring status data.Described constant-current source Is1, produces bias voltage by described resistance R2.Described constant-current source Is2, for generation of the reference current of MOSFET tube voltage drop reference circuit, produces reference voltage by described resistance R1.In present embodiment, constant-current source Is2 and Is1 is integrated low temp rising high precision DC constant current power supply
Further, as shown in Figure 2, described pulse suppresses unit to comprise clock submodule 102, pulse duration detection sub-module 101, troubleshooting submodule 103 and signal output sub-module 104.Wherein, described clock submodule is used for providing clock signal for each submodule.Described pulse duration detection sub-module, for detecting the width of input pulse, when this pulse duration is less than setting width, this pulse will by filtering, and when pulse duration is more than or equal to set point, this pulse is delivered to described signal output sub-module by by harmless.Described troubleshooting submodule, for detecting the fault-signal pulse that described comparator sends, the fault-signal pulse sent with the described comparator of detection, when there being low level pulse, this module will export the low level signal of 10ms at Fault end.Described signal output sub-module, carries out synchronism output for the signal described pulse duration detection sub-module exported.
As shown in Figure 3, described pulse processing unit 1 is after receiving the high level pulse signal or low level pulse signal that pulse duration is less than 1us, all by its filtering, only have pulse duration could nondestructively by described pulse processing unit 1 higher than the pulse signal of 1us.
The foregoing describe the specific embodiment of the present invention; but those skilled in the art are to be understood that; these only illustrate; various changes or modifications can be made to present embodiment; and not deviating from principle of the present invention and essence, protection scope of the present invention is only defined by the appended claims.
Claims (3)
1. have a mosfet driver for short pulse suppression function, it is characterized in that: comprise pulse and suppress unit, described pulse suppresses unit to be connected with fault-signal input with pulse input end; Described pulse suppresses unit to be connected with metal-oxide-semiconductor grid, and described metal-oxide-semiconductor drain electrode is connected with pulse output end; Described pulse suppresses unit to comprise clock submodule, pulse duration detection sub-module, troubleshooting submodule and signal output sub-module,
Described clock submodule is used for providing clock signal for each submodule;
Described pulse duration detection sub-module, for detecting the width of input pulse, when this pulse duration is less than setting width, this pulse will by filtering, and when pulse duration is more than or equal to set point, this pulse is delivered to described signal output sub-module by by harmless;
Described troubleshooting submodule, for detecting the fault-signal pulse that described comparator sends, the fault-signal pulse sent with the described comparator of detection, when there being low level pulse, output low level signal;
Described signal output sub-module, carries out synchronism output for the signal described pulse duration detection sub-module exported.
2. according to a kind of mosfet driver with short pulse suppression function according to claim 1, it is characterized in that: described pulse suppresses unit to be connected with comparator output terminal, described comparator reference input end is by resistance R1 ground connection, described comparator reference input is connected with power Vcc by constant-current source Is2, described comparator is compared input and is connected with power Vcc by constant-current source Is1, described comparator is compared input and is connected with diode D1 positive pole by resistance R2, and described diode D1 negative pole drains with metal-oxide-semiconductor Q1 and is connected; Described metal-oxide-semiconductor Q1 drain electrode is connected with pulse output end, and described metal-oxide-semiconductor Q1 grid is connected with amplifier out, and described pulse input end and pulse suppress unit to be connected, the source ground of described metal-oxide-semiconductor Q1.
3. according to a kind of mosfet driver with short pulse suppression function according to claim 1, it is characterized in that: described constant-current source Is2 and Is1 is integrated low temp rising high precision DC constant current power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410810120.8A CN104467754A (en) | 2014-12-23 | 2014-12-23 | MOSFET driver with short pulse suppressing function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410810120.8A CN104467754A (en) | 2014-12-23 | 2014-12-23 | MOSFET driver with short pulse suppressing function |
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| CN104467754A true CN104467754A (en) | 2015-03-25 |
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| CN201410810120.8A Pending CN104467754A (en) | 2014-12-23 | 2014-12-23 | MOSFET driver with short pulse suppressing function |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786077A (en) * | 2017-12-08 | 2018-03-09 | 深圳瑞丰恒激光技术有限公司 | A kind of Q-switch driving power controller failure detection means and method |
| CN110635792A (en) * | 2018-12-05 | 2019-12-31 | 徐州中矿大传动与自动化有限公司 | SiC MOSFET short-circuit protection circuit and method based on short-circuit current suppression |
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| WO2012135776A1 (en) * | 2011-03-30 | 2012-10-04 | Qualcomm Incorporated | Narrow pulse filter |
| CN103199678A (en) * | 2013-04-17 | 2013-07-10 | 国电南瑞科技股份有限公司 | Compact type insulated gate bipolar transistor (IGBT) module driving unit |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4216388A (en) * | 1978-08-07 | 1980-08-05 | Rca Corporation | Narrow pulse eliminator |
| US4786823A (en) * | 1986-04-18 | 1988-11-22 | Fujitsu Limited | Noise pulse suppressing circuit in digital system |
| CN1560996A (en) * | 2004-03-04 | 2005-01-05 | 威盛电子股份有限公司 | Short pulse canel circuit |
| CN1917369A (en) * | 2006-08-30 | 2007-02-21 | 广州金升阳科技有限公司 | IGBT drive, and process method for driving signal |
| CN201266921Y (en) * | 2008-08-28 | 2009-07-01 | 比亚迪股份有限公司 | Pulsewidth suppressing circuit and audio power amplifier |
| WO2012135776A1 (en) * | 2011-03-30 | 2012-10-04 | Qualcomm Incorporated | Narrow pulse filter |
| CN103199678A (en) * | 2013-04-17 | 2013-07-10 | 国电南瑞科技股份有限公司 | Compact type insulated gate bipolar transistor (IGBT) module driving unit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107786077A (en) * | 2017-12-08 | 2018-03-09 | 深圳瑞丰恒激光技术有限公司 | A kind of Q-switch driving power controller failure detection means and method |
| CN110635792A (en) * | 2018-12-05 | 2019-12-31 | 徐州中矿大传动与自动化有限公司 | SiC MOSFET short-circuit protection circuit and method based on short-circuit current suppression |
| CN110635792B (en) * | 2018-12-05 | 2023-12-15 | 江苏国传电气有限公司 | SiC MOSFET short-circuit protection circuit and method based on short-circuit current inhibition |
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Application publication date: 20150325 |