CN102545560A - Power switch driver, IC chip, and DC-DC converter - Google Patents
Power switch driver, IC chip, and DC-DC converter Download PDFInfo
- Publication number
- CN102545560A CN102545560A CN2011104225157A CN201110422515A CN102545560A CN 102545560 A CN102545560 A CN 102545560A CN 2011104225157 A CN2011104225157 A CN 2011104225157A CN 201110422515 A CN201110422515 A CN 201110422515A CN 102545560 A CN102545560 A CN 102545560A
- Authority
- CN
- China
- Prior art keywords
- power switch
- resistance
- switch driver
- chip
- ohm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a power switch driver, an IC chip and a DC-DC converter, for lowering ground bounce of a switch power source and for lowering impedance from the gate of a power switch to the power source or the ground when the power switch is switched off while ensuring a low opening speed of the power switch so as to prevent instant-on of the power switch through coupling of a parasitic capacitor. The power switch driver provided by the invention comprises an N-channel metal oxide semiconductor field effect transistor NMOS for controlling a P-type power switch, and a P-channel metal oxide semiconductor field effect transistor PMOS for controlling an N-type power switch, and also includes a first resistor connected with source of the NMOS, and a second resistor connected with source of the PMOS.
Description
Technical field
The present invention relates to the switch power technology field, relate in particular to a kind of power switch driver, IC chip and DC-to-dc converter.
Background technology
The increasing demand of current portable equipment and GSM increases, and these systems all be unable to do without electric power system, and DC-to-dc converter (DC/DC Converter) is widely used with its high efficiency.Shown in Figure 1 is exactly common synchronous buck type DC-to-dc converter (Buck, Step-Down DC/DCConverter) application circuit, comprises DC-to-dc converter integrated circuit (IC) chip, inductance L 0, output capacitance C0 and load RLoad.Wherein, the IC chip comprises controller (CONTROLLER), power switch driver (DRIVER), power switch M1 and M2.
Controller adopts certain control mode (PWM or PFM) to produce the pulse control signal of certain duty ratio (duty cycle); Remove driving power switch M1 and M2 through driver; Make that the common node SW generation peak value of M1 and M2 is the pulse signal that power supply arrives ground, hold the stable output voltage of generation at load RLoad through the filtering of inductance L 0 and capacitor C 0.
But, in practical application, have some non-ideal factors to consider.For example, routing stray inductance and resistance after the IC Chip Packaging, Rpara1 as shown in Figure 2 and Lpara1, Rpara2 and Lpara2.Dead resistance is tens milliohm magnitudes in general encapsulation, and stray inductance is a few nanohenry magnitudes.Because power switch M1 and M2 alternation switch; On the stray inductance of routing, have mutation current and produce big change in voltage; That is to say; The extraneous desirable earth potential of the earth potential of IC chip internal and chip has voltage difference, and the earth potential of chip is in high frequency " spring " state, ground bullet phenomenon (ground bounce) that Here it is when power switch conducting and shutoff.When adopting thinner packaging and routing from cost consideration, when perhaps load was heavier, the amplitude that the earth potential of IC chip is beated will increase, and at this moment will influence the control circuit of IC chip, thereby influenced the operate as normal of IC chip.
At present; As shown in Figure 3, in the prior art method commonly used be at driver to serial resistance (R1 and R2) between the grid of power switch M1 and M2, adopts bigger R1 and R2 (generally several kilohms of orders of magnitude); Reduce the ground bullet through the opening speed that slows down power switch M1 and M2; Wherein, power switch M1 be P-channel metal-oxide-semiconductor field effect (MOS) transistor (P-channel Metal Oxide Semiconductor, PMOS); Power switch M2 be N NMOS N-channel MOS N field effect (MOS) transistor (N-channel Metal-Oxide-Semiconductor, NMOS).
But when the diameter of packaging and routing is littler, promptly the stray inductance of routing is bigger, and when perhaps load current was bigger, the ground bullet of prior art was still very big.Reason is drawn high through PMOS M11 and the resistance R 1 of controlling this power switch M1 at the grid of power switch M1; But after the M2 conducting; The SW node is dragged down fast, because the resistance of R1 is bigger, promptly the grid of M1 is bigger to the impedance of power supply Vdd; Parasitic capacitance Cgd through M1 is (because the area of power switch M1 is bigger; The equivalence Cgd also bigger) coupling after, output (SW) also drags down the grid of M1, M1 is also in the moment conducting; M1 and M2 at the same time the moment of conducting will on packaging and routing inductance L para2, produce bigger electric current, this big electric current can suddenly change and make that GND end " spring " amplitude is very high, it is many that the waveform GND amplitude of beating as shown in Figure 4 reaches 1V.
In sum, the ground bullet phenomenon of power switch of the prior art is comparatively serious.
Summary of the invention
The embodiment of the invention provides a kind of power switch driver, IC chip and DC-to-dc converter; In order to reduce Switching Power Supply ground bullet; When keeping the slower opening speed of power switch; The grid of power switch is to the impedance on power supply or ground when reducing the switch-off power switch, and the power switch that is had no progeny in the pass can not the moment conducting through the coupling of parasitic capacitance.
A kind of power switch driver that the embodiment of the invention provides; Comprise the n channel metal oxide semiconductor field effect transistor NMOS that is used to control P type power switch; And the P-channel metal-oxide-semiconductor field-effect transistor PMOS that is used to control N type power switch; The grid of said NMOS and the grid of PMOS are connected to two clocks that do not overlap mutually through inverter respectively, and this power switch driver also comprises: first resistance is connected between the source electrode and ground of said NMOS; And second resistance is connected between the positive pole of source electrode and said power switch driver of said PMOS.
A kind of IC chip that the embodiment of the invention provides comprises described power switch driver.
A kind of DC-to-dc converter that the embodiment of the invention provides comprises described power switch driver.
The embodiment of the invention is through said power switch driver, IC chip and DC-to-dc converter; Can reduce Switching Power Supply ground bullet; When keeping the slower opening speed of power switch; The grid of power switch is to the impedance on power supply or ground when reducing the switch-off power switch, and the power switch that is had no progeny in the pass can not the moment conducting through the coupling of parasitic capacitance.
Description of drawings
Fig. 1 is synchronous buck type DC-to-dc converter of the prior art (Buck, a Step-Down DC/DC Converter) application circuit sketch map;
Fig. 2 is routing stray inductance and the sketch map of resistance after the IC Chip Packaging of DC-to-dc converter of the prior art;
Fig. 3 is that DC-to-dc converter of the prior art is at the sketch map of driver to serial resistance (R1 and R2) between the grid of power switch M1 and M2;
Fig. 4 is the ground bullet sketch map of the GND end of DC-to-dc converter shown in Figure 3;
The electrical block diagram of the DC-to-dc converter that Fig. 5 provides for the embodiment of the invention;
The ground bullet sketch map of the GND end of the DC-to-dc converter that Fig. 6 provides for the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of power switch driver, IC chip and DC-to-dc converter; In order to reduce Switching Power Supply ground bullet (ground bounce); When keeping the slower opening speed of power switch; The grid of power switch is to the impedance on power supply or ground when reducing the switch-off power switch, and the power switch that is had no progeny in the pass can not the moment conducting through the coupling of parasitic capacitance.
Referring to Fig. 5; A kind of power switch driver (DRIVER) that the embodiment of the invention provides; Comprise the NMOS M12 and the PMOS M11 that are used to control P type power switch M1, and the PMOS M21 and the NMOS M22 that are used to control N type power switch M2, this power switch driver also comprises:
Second resistance R 21 is connected between the positive pole (Vdd) of source electrode and said power switch driver of said PMOS M21.
Preferably, this power switch driver also comprises:
Be connected in the 3rd resistance R 11 between the grid of leakage level and said P type power switch M1 of said NMOS M12; And,
Be connected in the 4th resistance R 22 between the grid of leakage level and said N type power switch M2 of said PMOS M21.
Preferably,
The resistance of said first resistance R 12 equates with the resistance of said the 3rd resistance R 11;
The resistance of said second resistance R 21 equates with the resistance of said the 4th resistance R 22.
Preferably, the resistance span of said first resistance is:
100 ohm～400 ohm.
Preferably, the resistance span of said second resistance is:
100 ohm～400 ohm.
Preferably, the resistance span of said the 3rd resistance is:
100 ohm～400 ohm.
Preferably, the resistance span of said the 4th resistance is:
100 ohm～400 ohm.
Power switch driver as shown in Figure 5, that the embodiment of the invention provides also comprises two do not overlap mutually clock (BBM) and two inverters (INV).Two clocks that do not overlap mutually receive the duty cycle signals of controller (CONTROLLER), produce the drive signal of P type power switch M1 and N type power switch M2 respectively.Two clocks that do not overlap mutually guarantee that P type power switch M1 and N type power switch M2 can the while conductings.Inverter receive two do not overlap clock generating mutually drive signal, and with its anti-phase to reach P type power switch M1 and the required level of N type power switch M2.
A kind of integrated circuit (IC) chip as shown in Figure 5, that the embodiment of the invention provides comprises controller (CONTROLLER), above-mentioned power switch driver (DRIVER), power switch M1 and M2.Controller (CONTROLLER) produces the duty cycle signals that is fit to, and power switch driver (DRIVER) receives this duty cycle signals, finally produces the drive signal of power controlling switch M1 and M2.
As shown in Figure 5; A kind of DC-to-dc converter that the embodiment of the invention provides; Comprise above-mentioned DC-to-dc converter integrated circuit (IC) chip (comprising above-mentioned power switch driver), routing stray inductance and resistance (being Rpara1 and Lpara1 shown in Figure 5, Rpara2 and Lpara2).Routing stray inductance Lpara1 and resistance R para1 represent the ghost effect of the VCC pin after the Vdd in the chip accomplishes to encapsulation.In like manner, routing stray inductance Lpara2 and resistance R para2 represent the ghost effect that the GND in the chip arrives 0 level pin after encapsulation is accomplished.
As shown in Figure 5, in the embodiment of the invention R1 of the prior art shown in Figure 3 is divided into two resistance R 11 and R12, and preferably, R11=R12=0.5*R1 also is divided into two resistance R 21 and R22 with R2, and preferably, R21=R22=0.5*R2.Wherein R11 still remains on the position of original R1, and R22 remains on the position of original R2, R12 is placed between the source electrode and GND of prime driving tube M12 of power switch M2, R21 is placed between the source electrode and power supply Vdd of prime driving tube M21 of power switch M2.When power switch NMOS M2 opened, the gate charges of still giving M2 through R21 and R22 after the M21 conducting that is to say that the opening speed of power switch NMOS M2 is the same with prior art slower.But M11 conducting this moment; The grid of the power switch PMOS M1 that turn-offs is reduced to R11 (R11=0.5*R1) to the impedance of power supply by prior art R1; Thereby the grid of power switch PMOS M1 is with regard to being not easy by the decline of output SW and the step-down that is coupled; So power switch PMOS M1 can keep turn-offing when power switch NMOS M2 opens; On the inductance L para2 of packaging and routing, just do not have bigger mutation current, the ground bullet of GND end also can obviously reduce, and the ground bullet improves effect and also can in like manner derive during power switch PMOS M1 conducting.
Simulation waveform sketch map as shown in Figure 6, that the power switch driver that provides according to the embodiment of the invention exactly obtains, visible from figure, the GND waveform, just the ground bullet of the GND of IC chip end has only 500mV, has clear improvement than the 1V of prior art more.
In sum; The embodiment of the invention is through said power switch driver, IC chip and DC-to-dc converter; Can reduce Switching Power Supply ground bullet; When keeping the slower opening speed of power switch, the grid of power switch is to the impedance on power supply or ground when reducing the switch-off power switch, and the power switch that is had no progeny in the pass can not the moment conducting through the coupling of parasitic capacitance.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. power switch driver; Comprise the n channel metal oxide semiconductor field effect transistor NMOS that is used to control P type power switch; And the P-channel metal-oxide-semiconductor field-effect transistor PMOS that is used to control N type power switch; The grid of said NMOS and the grid of PMOS are connected to two clocks that do not overlap mutually through inverter respectively, it is characterized in that this power switch driver also comprises:
First resistance is connected between the source electrode and ground of said NMOS; And,
Second resistance is connected between the positive pole of source electrode and said power switch driver of said PMOS.
2. power switch driver according to claim 1 is characterized in that, this power switch driver also comprises:
Be connected in the 3rd resistance between the grid of leakage level and said P type power switch of said NMOS; And,
Be connected in the 4th resistance between the grid of leakage level and said N type power switch of said PMOS.
3. power switch driver according to claim 2 is characterized in that,
The resistance of said first resistance equates with the resistance of said the 3rd resistance;
The resistance of said second resistance equates with the resistance of said the 4th resistance.
4. power switch driver according to claim 2 is characterized in that, the resistance span of said first resistance is:
100 ohm～400 ohm.
5. power switch driver according to claim 2 is characterized in that, the resistance span of said second resistance is:
100 ohm～400 ohm.
6. power switch driver according to claim 2 is characterized in that, the resistance span of said the 3rd resistance is:
100 ohm～400 ohm.
7. power switch driver according to claim 2 is characterized in that, the resistance span of said the 4th resistance is:
100 ohm～400 ohm.
8. an IC chip is characterized in that, this IC chip comprises the described power switch driver of the arbitrary claim of claim 1-7.
9. a DC-to-dc converter is characterized in that, this transducer comprises the described power switch driver of the arbitrary claim of claim 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110422515.7A CN102545560B (en) | 2011-12-15 | 2011-12-15 | Power switch driver, IC chip, and DC-DC converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110422515.7A CN102545560B (en) | 2011-12-15 | 2011-12-15 | Power switch driver, IC chip, and DC-DC converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102545560A true CN102545560A (en) | 2012-07-04 |
| CN102545560B CN102545560B (en) | 2014-09-03 |
Family
ID=46351706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110422515.7A Active CN102545560B (en) | 2011-12-15 | 2011-12-15 | Power switch driver, IC chip, and DC-DC converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102545560B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
| CN107888152A (en) * | 2017-11-16 | 2018-04-06 | 上海顺久电子科技有限公司 | Power amplifier, radio frequency transceiver, remote control applied to radio frequency transceiver |
| CN109565238A (en) * | 2016-07-29 | 2019-04-02 | 松下知识产权经营株式会社 | Switch circuit devices and power inverter |
| CN111133666B (en) * | 2017-10-03 | 2024-03-29 | 三菱电机株式会社 | Power conversion circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961481A (en) * | 2004-06-02 | 2007-05-09 | 罗姆股份有限公司 | Coil load drive output circuit |
| CN101234561A (en) * | 2007-01-31 | 2008-08-06 | 三美电机株式会社 | Thermal head driving circuit |
| CN101677210A (en) * | 2008-06-18 | 2010-03-24 | 技领半导体(上海)有限公司 | Switch driver with low impedance initial drive and higher impedance final drive |
| CN202424492U (en) * | 2011-12-15 | 2012-09-05 | 无锡中星微电子有限公司 | Power switch driver, IC (integrated circuit) chip and DC-DC converter |
-
2011
- 2011-12-15 CN CN201110422515.7A patent/CN102545560B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961481A (en) * | 2004-06-02 | 2007-05-09 | 罗姆股份有限公司 | Coil load drive output circuit |
| CN101234561A (en) * | 2007-01-31 | 2008-08-06 | 三美电机株式会社 | Thermal head driving circuit |
| CN101677210A (en) * | 2008-06-18 | 2010-03-24 | 技领半导体(上海)有限公司 | Switch driver with low impedance initial drive and higher impedance final drive |
| CN202424492U (en) * | 2011-12-15 | 2012-09-05 | 无锡中星微电子有限公司 | Power switch driver, IC (integrated circuit) chip and DC-DC converter |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109565238A (en) * | 2016-07-29 | 2019-04-02 | 松下知识产权经营株式会社 | Switch circuit devices and power inverter |
| CN109565238B (en) * | 2016-07-29 | 2020-10-20 | 松下知识产权经营株式会社 | Switching circuit device and power conversion device |
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
| CN111133666B (en) * | 2017-10-03 | 2024-03-29 | 三菱电机株式会社 | Power conversion circuit |
| CN107888152A (en) * | 2017-11-16 | 2018-04-06 | 上海顺久电子科技有限公司 | Power amplifier, radio frequency transceiver, remote control applied to radio frequency transceiver |
| CN107888152B (en) * | 2017-11-16 | 2022-04-22 | 海信视像科技股份有限公司 | Power amplifier applied to radio frequency transceiver, radio frequency transceiver and remote controller |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102545560B (en) | 2014-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104022776B (en) | Bootstrapping diode artificial circuit in half-bridge driving circuit | |
| CN104518654B (en) | High-voltage starting circuit | |
| JP5945629B2 (en) | Level shift circuit | |
| CN104135237B (en) | Gate driving circuit | |
| CN108429445B (en) | Soft start circuit applied to charge pump | |
| CN203151371U (en) | Negative charge pump circuit | |
| CN104579274B (en) | Switch circuit and driving method thereof | |
| CN103280967A (en) | Charge pump and method for enabling negative output voltage of charge pump to follow positive output voltage | |
| CN109039059A (en) | A kind of efficient multi-mode charge pump | |
| CN103715870B (en) | Voltage adjuster and resonant gate driver thereof | |
| CN104067517A (en) | Methods and systems for ultrasound control with bidirectional transistor | |
| CN102545560B (en) | Power switch driver, IC chip, and DC-DC converter | |
| CN111555595A (en) | GaN power tube gate drive circuit with controllable opening rate | |
| CN101552593B (en) | A driving circuit to drive an output stage | |
| CN202424492U (en) | Power switch driver, IC (integrated circuit) chip and DC-DC converter | |
| CN104124951B (en) | Circuit for driving high-side transistor | |
| CN111181375B (en) | full-GaN integrated half-bridge dead-time adjusting circuit | |
| RU2420858C2 (en) | Switching circuit and method to control power consumer | |
| CN102832812A (en) | Switching circuit and DC-to-DC converter | |
| CN101667740B (en) | Output driving circuit in lithium battery charge and discharge protective chip | |
| US9467122B2 (en) | Switching scheme to extend maximum input voltage range of a DC-to-DC voltage converter | |
| US10819234B2 (en) | Switching converter with a self-operated negative boost switch | |
| CN103051166A (en) | Soft start circuit for switching power supply | |
| TWI543503B (en) | Switching circuit | |
| US20130063187A1 (en) | Solid-state switch driving circuit for vehicle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214028 Jiangsu New District of Wuxi, Taihu international science and Technology Park Jia Qing 530 building 10 layer Patentee after: WUXI ZHONGGAN MICROELECTRONIC CO., LTD. Address before: 214028 Jiangsu New District of Wuxi, Taihu international science and Technology Park Jia Qing 530 building 10 layer Patentee before: Wuxi Vimicro Co., Ltd. |