CN108988619A - A kind of IGBT module driving circuit suitable for high-power inverter - Google Patents
A kind of IGBT module driving circuit suitable for high-power inverter Download PDFInfo
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- CN108988619A CN108988619A CN201810649589.6A CN201810649589A CN108988619A CN 108988619 A CN108988619 A CN 108988619A CN 201810649589 A CN201810649589 A CN 201810649589A CN 108988619 A CN108988619 A CN 108988619A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
- H02M3/3376—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current
Abstract
The present invention relates to a kind of IGBT module driving circuits suitable for high-power inverter, including full-bridge DC/DC driving power circuit, one optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, under-voltage and fault secure circuit, it is characterized in that being additionally provided with transformer feedback over-current signal circuit, transformer feedback over-current signal circuit includes transformer output feed circuit and transformer input identification circuit, transformer output feed circuit sampling over-current signal and the input for feeding back to transformer, transformer input identification circuit is connect with under-voltage and fault secure circuit, identification over current fault or supply voltage under-voltage fault simultaneously pass through optical coupling isolation circuit, push-pull power amplifier circuit closes IGBT drive circuit, IGBT grid overvoltage protection.The beneficial effects of the invention are as follows simple for structure, at low cost, small in size, capacity is big, high reliablity.
Description
Technical field
The present invention relates to a kind of IGBT module driving circuits suitable for high-power inverter, are mainly used for electrical control.
Technical background
Inverter is widely used in the industries such as wind energy, solar energy, frequency converter.In recent years, with the rapid development of new energy,
Inverter develops to large capacity, high voltage direction, and inverter switch device is usually IGBT(insulated gate bipolar transistor),
Driving circuit has two kinds of isolated forms of transformer isolation and light-coupled isolation, and IGBT module capacity is bigger, then requires driving circuit
Capacity is bigger, and IGBT module voltage class is higher, needs the isolation voltage of driving circuit higher, therefore the driving of IGBT module
Circuit design is the key that inverter.The driver of transformer isolation has CONCEPT company of Switzerland 2SC0435T(1700V at present
Voltage class, every road power 4W, peak anode current 35A), the 2ED300C17-ST(1700V voltage of German INFINEON company
Grade, every road power 4W, peak anode current 30A), they the characteristics of power is relatively large, defencive function is complete, at present extensively
Applied in wind energy and photovoltaic DC-to-AC converter.But the number of devices of this quasi-driver is more, expensive, and volume is larger, is not suitable for peace
Mounted in the surface IGBT (connecting cable distance is longer), reliability is reduced.
Driving circuit is expanded letter optocoupler, such as HCNW2611 or HCNW3120 using the device of light-coupled isolation, but is applied
Optocoupler is only driven in this kind of expanded letter optocoupler of 690V system, does not feed back optocoupler, this just needs to increase a feedback optocoupler, at
This increase, volume increase.Meanwhile the driving current of expanded letter optocoupler is limited, peak value maximum only has 2A, is unable to satisfy large capacity IGBT
The needs of module.
For in high-power or parallel IGBT driving circuit, caused driving voltage is positively or negatively sharp due to various reasons
Peak is more serious, causes grid voltage to allow voltage range that power semiconductor is caused to damage beyond semiconductor, for overpressure problems
It is to carry out peak absorbing using increase grid capacitance or using voltage-stabilizing device, but this inhibiting effect is limited mostly before,
It still can not fully effective inhibition over-voltage spike under partial picture.For example document number is the document of CN201420397767.8, is
It solves when IGBT shutdown, the peak voltage that the frequency that line inductance generates is very high, amplitude is very big, pulse is very narrow, threat is opened
The trouble free service of pipe is closed, which employs the protection circuit for having soft turn-off function and source clamper function, soft turn-off function can basis
Actual demand adjusts the time of soft switching, can effectively inhibit the peak voltage generated by parasitic inductance in circuit, it is ensured that
IGBT safe and reliable work, source clamper function can vise the collector potential of IGBT, it is made not reach too high level, electricity
Pointing peak is too high, or too steep, can all IGBT be made to be on the hazard；Document number is the document of CN201020298705.3, for existing
There is the short circuit that the IGBT tube device circuit cost in technology is high, cannot lead directly to output short-circuit and upper and lower bridge arm to shield
Defect, proposes a kind of protective module of driving circuit based on IGBT bridge switch topology, which includes bus inspection
Current unit, threshold value comparison unit, lower bridge control unit, failure feedback unit and MCU are surveyed, lower bridge control unit is believed in voltage
When number being greater than reference voltage threshold value, the positive gate driving voltage of lower bridge IGBT pipe is stablized to second voltage, second voltage is less than
Positive gate driving voltage when IGBT pipe works normally, failure feedback unit are used to be greater than reference voltage threshold value in voltage signal,
And the positive gate driving voltage of lower bridge IGBT pipe is stablized to second voltage, feeds back fault-signal to MCU, and MCU is according to failure
Signal stops output gate electrode drive signals.Although can be seen that Drive Protecting Circuit from the technical solution of above-mentioned document has guarantor
Protective function, but the connection of circuit is excessively complicated, the cost of production is excessively high, causes to lack feasibility in practical application link,
It not can be well solved practical problem.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the above-mentioned deficiency in the presence of the prior art, and provide a kind of suitable
IGBT module driving circuit for high-power inverter.
The technical proposal adopted by the invention to solve the above technical problems is that: it should be suitable for the IGBT mould of high-power inverter
Block driving circuit, including full-bridge DC/DC driving power circuit, an optical coupling isolation circuit, push-pull power amplifier circuit, IGBT mistake
Current detection circuit, under-voltage and fault secure circuit, full-bridge DC/DC driving power circuit include transformer, optical coupling isolation circuit with
Push-pull power amplifier circuit, it is under-voltage connected with fault secure circuit, push-pull power amplifier circuit and IGBT drive circuit, IGBT mistake
Current detection circuit connection, it further includes IGBT grid overvoltage protection that IGBT over-current detection circuit is connect with parallel IGBT driving circuit
Circuit, parallel IGBT gate driving circuit, the parallel IGBT gate driving circuit are connect with IGBT grid overvoltage crowbar,
Be additionally provided with transformer feedback over-current signal circuit, transformer feedback over-current signal circuit include transformer output feed circuit and
Transformer input identification circuit, transformer output feed circuit sampling over-current signal and the input for feeding back to transformer, transformer
Input identification circuit is connect with under-voltage and fault secure circuit, is identified over current fault or supply voltage under-voltage fault and is passed through optocoupler
Isolation circuit, push-pull power amplifier circuit close IGBT drive circuit.
Transformer of the present invention output feed circuit includes resistance five, triode five, diode four, resistance 12, and two
Four cathode connecting transformer output cathode of pole pipe, four cathode of diode connect five collector of triode, and five emitter of triode connects transformation
Device output negative pole, transformer output negative pole connect drivingly, five base stage connecting resistance of triode, five one end, another terminating resistor of resistance five
12 one end and IGBT over-current detection circuit, another termination of resistance 12 is drivingly.
Transformer input identification circuit of the present invention includes diode one, capacitor one, resistance one, Zener diode one,
One cathode connecting transformer of diode inputs one end, and one cathode of diode connects one end of capacitor one, one end of resistance one, two pole of Zener
One cathode of pipe, one anode of Zener diode connect under-voltage and fault secure circuit, one other end of capacitor, one other end of resistance and resistance
Two other ends link together and connect digitally.
IGBT over-current detection circuit of the present invention includes high-voltage diode, resistance ten, resistance nine, capacitor four, Zener two
Pole pipe two, diode five, resistance six, triode seven, high-voltage diode cathode connect IGBT drive circuit, and high-voltage diode anode connects
One end of resistance nine, nine other end of resistance connect one end of two cathode of Zener diode, one end of capacitor four, resistance ten respectively, electricity
Ten another termination driving power output cathodes are hindered, two cathode connecting transformer of Zener diode exports feed circuit, triode seven is sent out
Emitter-base bandgap grading, seven collector of triode, capacitor four are another to be terminated drivingly, one end of seven base stage connecting resistance six of triode, resistance six
Another five anode of terminating diode, five cathode of diode connect the input of push-pull power amplifier circuit.
Of the present invention under-voltage and fault secure circuit includes resistance two, resistance three, triode six, diode seven, resistance
11, triode ten, one end of resistance three, one end of resistance 11 connect input power respectively, and three other end of resistance connects three respectively
Ten base stage of pole pipe, six collector of triode, six emitter of triode, ten emitter of triode, resistance two one end connect number
Ground, six base stage of triode are connect with the other end of resistance two, transformer input identification circuit, and 11 other end of resistance connects three respectively
Ten collector of pole pipe, seven cathode of diode, seven anode of diode connect optical coupling isolation circuit.
Parallel IGBT gate driving circuit of the present invention includes resistance seven, resistance eight, resistance 13, resistance 16, electricity
17, resistance 18 is hindered, resistance July 1st end and driving are recommended short circuit output and connected, and seven other end of resistance distinguishes connecting resistance Aug. 1st
It holds, the grid of power semiconductor one, another 13 one end of terminating resistor of resistance eight is simultaneously accessed digitally, another termination of resistance 13
The emitter of power semiconductor switch one；Similarly, in another way driving circuit in parallel, 16 one end of resistance is pushed away with driving
Short circuit output connection is drawn, 16 other end of resistance distinguishes the grid at ten July 1st of connecting resistance end, power semiconductor two, and resistance 17 is another
One terminating resistor, 18 end is simultaneously accessed digitally, the emitter of another termination power semiconductor switch two of resistance 18.
IGBT grid overvoltage crowbar of the present invention includes diode eight, diode nine, diode ten, diode ten
One, resistance 14, resistance 15, resistance 19, resistance 20, capacitor five, capacitor six, capacitor seven, capacitor eight, resistance 14
One end connects negative driving power, and the other end is separately connected one end of the positive grade of diode nine, capacitor six, and nine cathode of diode accesses function
The grid of rate semiconductor switch device one, the emitting stage of six other end access power semiconductor switch device one of capacitor, resistance ten
Five one end connects positive driving power, and the other end is separately connected one end of the negative grade of diode eight, capacitor five, and eight anode of diode connects
Enter the grid of power semiconductor switch one, the emitting stage of five other end access power semiconductor switch device one of capacitor；Together
It manages, in another way grid overvoltage crowbar in parallel, 19 one end of resistance connects negative driving power, and the other end is separately connected two
One end of the positive grade of pole pipe 11, capacitor eight, the grid of 11 cathode access power semiconductor switch device two of diode, capacitor eight
The emitting stage of other end access power semiconductor switch device two, one end of resistance 20 connect positive driving power, the other end point
Not Lian Jie the negative grade of diode ten, capacitor seven one end, the grid of the positive access power semiconductor switch device two of diode ten, electricity
Hold the emitting stage of seven other end access power semiconductor switch devices two.
The beneficial effects of the invention are as follows simple for structure, at low cost, small in size, capacity is big, and high reliablity is low in cost, easily
In maintenance.
Detailed description of the invention
Fig. 1 is circuit diagram of the embodiment of the present invention；
Fig. 2 is typical waveform schematic diagram of the embodiment of the present invention.
Specific embodiment
Description in detail is carried out further to the present invention in conjunction with accompanying drawings and embodiments.
The present embodiment include full-bridge DC/DC driving power circuit, an optical coupling isolation circuit, push-pull power amplifier circuit,
IGBT over-current detection circuit, transformer feedback over-current signal circuit, under-voltage and fault secure circuit.Transformer feedback over-current signal
Circuit transmits IGBT over current fault signal by transformer T1, by five Q5 of turn-on transistor, will become when there is over current fault
Depressor T1 output short-circuit, passes the signal along to transformer T1 input, and transformer T1 rectified voltage is lower than failure setpoint (Zener
One Z1 voltage value of diode), just identify failure.
As shown in Figure 1, the full-bridge DC/DC driving power circuit includes: the full-bridge circuit (including three of driving power input
One Q1 of pole pipe, two Q2 of triode, three Q3 of triode, four Q4 of triode) and transformer T1, one Q1 of triode, three Q3 of triode connect
Suspension control signal, two Q2 of triode, four Q4 of triode connect suspension control signalComplementary signal, transformer T1 work is made to exist
Full-bridge mode, transformer T1's is high-efficient in such a mode, can satisfy the driving power demand of large capacity IGBT module, defeated
Entering power supply vdd voltage is usually 15V；Driving power output rectification circuit (including two D2 of diode, three D3 of diode, capacitor two
C2, three C3 of capacitor) output rectification is positive driving power (+15V) and negative driving power (- 15V) two-way voltage, for light-coupled isolation
Circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, transformer feedback over-current signal circuit, IGBT drive circuit mention
Power supply source, IGBT drive circuit include resistance seven, resistance eight and IGBT module V1, and full-bridge DC/DC driving power circuit is existing
Technology.
The optical coupling isolation circuit includes: current-limiting resistance R4 and expanded letter optocoupler U1, by pwm control signal from current-limiting resistance R4
Input is transmitted to output, and expanded letter optocoupler U1 can satisfy the isolation requirement of 1000V busbar voltage, and optical coupling isolation circuit is existing skill
Art.
The push-pull power amplifier circuit includes: NPN triode Q8 and PNP triode Q9, due to the output electric current of optocoupler
Be not able to satisfy the driving current demand of IGBT module V1, need to increase level-one push-pull amplifier circuit, for example, using FZT851 and
FZT951, driving current peak I CM reach 15A, increase accordingly, can satisfy if multiple triode parallel drive power
The more demand of high-power IGBT module V1, push-pull power amplifier circuit are the prior art.
The IGBT over-current detection circuit includes: high-voltage diode D6, ten R10 of resistance, and overcurrent filter circuit is (by resistance nine
R9 and four C4 of capacitor composition), two Z2 of Zener diode opens identification circuit (including five D5 of diode, six R6 of resistance, triode
Seven Q7).High-voltage diode D6 cathode connects IGBT module V1 collector, nine one end R9 of high-voltage diode D6 anode connecting resistance, resistance
The nine R9 other ends connect two Z2 cathode of Zener diode, four one end C4 of capacitor, ten one end R10 of resistance, the ten R10 other end of resistance respectively
Driving power output cathode is connect, two Z2 anode connecting resistance of Zener diode, 12 one end R12, another termination of four C4 of capacitor is drivingly
AGND.Its working method is in the normal opening process of IGBT, and IGBT conduction voltage drop Vcesat is relatively low, is less than Zener diode
Two Z2 threshold voltage 10V, therefore late-class circuit is 0V；In IGBT exception opening process, if IGBT conduction voltage drop Vcesat
More than setting value (two Z2 of Zener diode is 10V, setting value approximation 10V-Vf, about 9.3V here), then detect at IGBT
In overcurrent or saturation state is moved back, late-class circuit is greater than 0.7V, then exports failure to controller by feed circuit；It is closed in IGBT
During disconnected, open identification circuit detect PWM drive signal be it is low, then detection electricity is closed by opening seven Q7 of triode
Road, in IGBT opening process, open identification circuit detect PWM drive signal for height, then by close seven Q7 of triode come
Open detection circuit.
The transformer feedback over-current signal circuit includes that transformer exports feed circuit and transformer input identification circuit,
It includes five R5 of resistance, five Q5 of triode, four D4 of diode, 12 R12 of resistance, four D4 of diode that transformer, which exports feed circuit,
Cathode connecting transformer T1 output end OUT2, four D4 cathode of diode connect five Q5 collector of triode, and five Q5 emitter of triode connects
Transformer T1 output end OUT1, transformer T1 output end OUT1 meet drivingly AGND, five Q5 base stage connecting resistance of triode, five R5 mono-
End, another 12 one end R12 of terminating resistor five R5 of resistance and seven Q7 emitter of triode, the 12 R12 other end of resistance, triode
Seven Q7 collectors meet drivingly AGND.When IGBT conduction voltage drop Vcesat is in overcurrent, five Q5 of triode conducting, by transformer
TI carries out short circuit, and transformer T1 output electric current is caused instantaneously to increase, and over-current signal is fed back to transformer T1 input.Transformer is defeated
Entering identification circuit includes one D1 of diode, one C1 of capacitor, one R1 of resistance, one Z1 of Zener diode, and one D1 anode of diode connects change
Depressor T1 inputs one end IN1, and it is negative that one D1 cathode of diode meets one one end C1 of capacitor, one one end R1 of resistance, one Z1 of Zener diode
Pole, one Z1 anode connecting resistance of Zener diode, two one end R2, the one C1 other end of capacitor, the one R1 other end of resistance and two R2 of resistance are another
One end links together and meets digitally GND.When transformer T1 is due to output short-circuit, input current is caused to increase, therefore three poles
The saturation voltage drop Vce of one Q1 of pipe increases, therefore transformer T1 input voltage accordingly reduces, at this moment transformer input identification circuit
Just can detect and be out of order, if voltage is less than one Z1 setting value of 12V(Zener diode), identification is out of order, the spy of this circuit
If point further includes that supply voltage VDD is less than setting value (12V), also the same identification is out of order, effective protection IGBT module V1.
Described under-voltage and fault secure circuit includes two R2 of resistance, three R3 of resistance, six Q6 of triode, seven D7 of diode, electricity
11 R11, ten Q10 of triode are hindered, three one end R3 of resistance, 11 R11 mono- of resistance terminate input power VDD, and three R3 of resistance is another
End connects ten Q10 base stage of triode, six Q6 collector of triode respectively, and six Q6 emitter of triode, ten Q10 emitter of triode are equal
Digitally GND is met, six Q6 base stage of triode is connect with one Z1 anode of Zener diode, and the 11 R11 other end of resistance connects three respectively
Ten Q10 collector of pole pipe, seven D7 cathode of diode, seven D7 anode of diode connect optical coupling isolation circuit.When identifying under-voltage or mistake
When flowing failure, then six Q6 of triode is turned off, ten Q10 of triode is opened, is pulled low PWM drive signal, passes through light-coupled isolation electricity
Road turns off IGBT module V1, this electric circuit characteristic is Self-resetting output overcurrent failure and its detection circuit.
The IGBT/gate includes seven R7 of resistance, eight R8 of resistance, 13 R13 of resistance, 16 R16 of resistance, electricity
17 R17,18 R18 of resistance are hindered, seven one end R7 of resistance and driving are recommended short circuit output and connected, and the seven R7 other end of resistance connects respectively
Eight one end R8 of resistance, one V1 of power semiconductor grid, number is simultaneously accessed in another 13 one end R13 of terminating resistor eight R8 of resistance
Ground, the emitter of another termination one V1 of power semiconductor switch of 13 R13 of resistance；Similarly, another way in parallel drives electricity
Lu Zhong, 16 one end R16 of resistance and driving are recommended short circuit output and are connected, and the 16 R16 other end of resistance distinguishes 17 R17 of connecting resistance
One end, two V2 of power semiconductor grid, another 18 one end R18 of terminating resistor 17 R17 of resistance simultaneously access digitally, resistance
The emitter of another termination two V2 of power semiconductor switch of 18 R18；When driving signal driving power semiconductor switching device
When part, driving voltage is opened by seven R7 of resistance, 13 R13 of resistance, 16 R16 of resistance, 18 R18 driving power semiconductor of resistance
Device V1 and V2 are closed, driving circuit is the prior art.
The IGBT grid overvoltage crowbar includes eight D8 of diode, nine D9 of diode, ten D10 of diode, diode
11 D11,14 R14 of resistance, 15 R15 of resistance, 19 R19 of resistance, 20 R20 of resistance, five C5 of capacitor, six C6 of capacitor, electricity
Hold seven C7, eight C8 of capacitor, one end of 14 R14 of resistance connects negative driving power -15V, and the other end is separately connected nine D9 of diode
One end of positive grade, six C6 of capacitor, the grid of nine D9 cathode access power semiconductor switch device of diode, one V1, six C6 of capacitor are another
One end of the emitting stage of one V1 of one end access power semiconductor switch device, 15 R15 of resistance connects positive driving power+15V, separately
One end is separately connected one end of the negative grade of eight D8 of diode, five C5 of capacitor, eight D8 anode access power semiconductor switching device of diode
The grid of one V1 of part, the emitting stage of five C5 other end access power semiconductor switch device of capacitor, one V1；Similarly, in parallel another
In the grid overvoltage crowbar of road, 19 one end R19 of resistance connects negative driving power -15V, and the other end is separately connected diode ten
One end of the positive grade of one D11, eight C8 of capacitor, the grid of 11 D11 cathode access power semiconductor switch device of diode, two V2, electricity
Hold the emitting stage of eight C8 other end access power semiconductor switch devices, two V2, the positive driving electricity of one end connection of 20 R20 of resistance
Source+15V, the other end are separately connected one end of the negative grade of ten D10 of diode, seven C7 of capacitor, ten D10 anode access power of diode half
The grid of two V2 of conductor switching device, the emitting stage of seven C7 other end access power semiconductor switch device of capacitor, two V2；Work as function
Rate semiconductor switch device V1 grid voltage is more than positive voltage, and eight D8 of diode is open-minded, by power semiconductor switch
V1 grid voltage is stabilized to positive voltage, when power semiconductor switch grid V1 voltage is lower than negative supply voltage, two poles
Nine D9 of pipe is open-minded, and power semiconductor switch V2 grid voltage is stabilized to negative supply voltage, plays the role of protecting grid；Together
It manages, in another way grid overvoltage crowbar in parallel, when power semiconductor switch V2 grid voltage is more than positive supply electricity
Pressure, eight D8 of diode is open-minded, and power semiconductor switch V2 grid voltage is stabilized to positive voltage, works as power semiconductor
Switching device V2 grid voltage is lower than negative supply voltage, and nine D9 of diode is open-minded, by power semiconductor switch V2 grid electricity
Pressure is stabilized to negative supply voltage, plays the role of protecting grid.
The present invention transmits over current fault signal using transformer T1, saves an expanded letter feedback optocoupler, isolation voltage
Meet the requirement of 1000V busbar voltage.Circuit structure is simple, and number of devices is few, small in size, therefore is adapted for mount on the surface IGBT,
The interference problems such as EMC caused by wire length are avoided, driving circuit reliability is further increased.DC/DC power circuit is adopted
Triode power amplification circuit is used with full-bridge circuit structure and output, makes drive module current capacity is big to meet high-power IGBT
Module demand.
The typical waveform schematic diagram of the present embodiment is as shown in Figure 2: high-power inverter switching frequency generally 2kHz ~
Between 10kHz, the frequency of this example hypothesis-driver is 10kHz, and full-bridge DC/DC driving power circuit switch frequency is set as
180kHz, driver input voltage VDD are assumed to be 15V, are+15V and -15V two-way voltage after output rectification.In Fig. 21 shown in
Waveform is optical coupling isolation circuit input terminal (PWM) waveform diagram, and waveform shown in 2 is triode ten Q10 collector (FAULT) waveform
Figure, waveform shown in 3 are IGBT module V1 input (end G, i.e. IGBT module drive DRV in Fig. 1) waveform diagram, and waveform shown in 4 is neat
Receive two Z2 cathode waveform diagram of diode, waveform shown in 5 is two Z2 anode waveform diagram of Zener diode, and waveform shown in 6 is transformer
T1 inputs one end IN1 waveform diagram, and waveform shown in 7 is one Z1 cathode waveform diagram of Zener diode.
It is normal condition at t1 ~ t2 moment, PWM state ON, without IGBT conduction voltage drop Vcesat over current fault:
Optical coupling isolation circuit input terminal voltage is 15V in waveform, and driving signal is passed to output by expanded letter optocoupler U1；
Ten Q10 collector voltage of triode is 15V in waveform, without IGBT conduction voltage drop Vcesat over current fault；
IGBT module V1 input voltage is 15V in waveform, and IGBT module V1 is in normally state；
Two Z2 cathode voltage of Zener diode is 2V in waveform, and IGBT module V1 is normally open-minded, IGBT conduction voltage drop Vcesat electricity
Positive pressure is normally opened to be led to for 2V or so, therefore two Z2 cathode voltage clamper of Zener diode is in 2V or so；
Two Z2 cathode voltage of Zener diode is 0V in waveform, since two Z2 cathode voltage of Zener diode is 2V, is lower than Zener
Diode voltage 10V, therefore two Z2 anode of Zener diode is pulled down to 0V by 12 R12 of resistance, seven Q7 of triode shutdown is opened
IGBT over-current detection circuit；
It is supply voltage 15V or so that transformer T1, which inputs one end IN1 maximum peak voltage, in waveform；
In waveform one Z1 cathode of Zener diode by one D1 of diode, one C1 of capacitor, one R1 of resistance rectifying and wave-filtering after, electricity
Pressure value is greater than the threshold voltage 12V of Zener diode Z1, fault-free.
It is normal condition at t2 ~ t3 moment, PWM state OFF:
Optical coupling isolation circuit input terminal voltage is 0V in waveform, and driving signal is passed to output by expanded letter optocoupler U1；
IGBT module V1 input voltage is -15V in waveform, and IGBT module V1 is in an off state；
Two Z2 cathode voltage of Zener diode is 10V in waveform, and IGBT conduction voltage drop Vcesat voltage is equal to IGBT module V1C-E
Voltage between (collector-emitter), high-voltage diode D6 shutdown, seven Q7 of triode is open-minded, two Z2 cathode voltage of Zener diode
By Zener diode Z2 clamper in 10V；
Two Z2 cathode voltage of Zener diode is 0V in waveform, and seven Q7 of triode is open-minded, and two Z2 anode of Zener diode is pulled low
To 0V, IGBT over-current detection circuit is closed；
For one Z1 cathode of Zener diode after rectifying and wave-filtering, voltage is greater than the threshold voltage of Zener diode Z1 in waveform
12V, fault-free.
The t3 moment becomes the ON moment by OFF for PWM, and output detection is out of order, in the overcurrent event of t4 moment Self-resetting output
Barrier, at t3 ~ t4 moment, for the delay time for detecting over current fault, generally within 10us, and PWM state is ON:
Optical coupling isolation circuit input terminal voltage is 15V, PWM state ON in waveform, is passed driving signal by expanded letter optocoupler U1
Pass output；
Ten Q10 collector voltage of triode is 15V in t3 ~ t4 in waveform, detects IGBT conduction voltage drop Vcesat at the t4 moment
Over current fault, therefore ten Q10 of triode is connected, ten Q10 collector of triode is pulled down to 0V；
IGBT module V1 input voltage is 15V in waveform, and IGBT conduction voltage drop Vcesat is in over-current state, general IGBT conducting
Pressure drop Vcesat over current fault needs to postpone several uS times, if delay is too short, is easy disturbed, IGBT module V1 permission
Failure time of short circuit is less than 10uS；
Two Z2 cathode voltage of Zener diode exports at t3 ~ t4 moment in waveform detects Vcesat over current fault, is 12V, PWM
State is ON, and seven Q7 of triode shutdown opens IGBT over-current detection circuit, due to ten Q10 current collection of triode after the t4 moment
Pole tension is 0V, and Self-resetting exports fault detection circuit, therefore two Z2 cathode voltage of Zener diode is 10V；
Two Z2 anode of Zener diode is 2V in t3 ~ t4 moment voltage in waveform, since two Z2 cathode voltage of Zener diode is
12V is higher than zener diode voltage 10V, is 0V at the t4 moment；
It is to be pulled low to 11V that transformer T1, which inputs one end IN1 maximum peak voltage, in waveform, due to transformer T1 output short-circuit,
One Q1 of triode is inputted, four Q4 conduction voltage drop of triode increases, and reduces transformer T1 both end voltage accordingly；
One Z1 cathode of Zener diode is after rectifying and wave-filtering in waveform, after the filtering of t3 ~ t4 this period, at the t4 moment
Detect IGBT conduction voltage drop Vcesat over current fault.
At t4 ~ t5 moment, it is the time of latch fault, generally requires controller during this period of time to identify and be out of order,
The t5 moment closes pwm pulse, transformer T1 input fault self-cleaning:
Optical coupling isolation circuit input terminal voltage is 15V in waveform, and PWM state becomes OFF by ON, and controller identifies event before t5
Barrier；
Ten Q10 collector voltage of triode is 0V in waveform, detects IGBT conduction voltage drop Vcesat failure at the t4 moment, therefore
Ten Q10 of triode conducting, ten Q10 collector of triode are pulled down to 0V, detect Vcesat over current fault, input at the t5 moment
Failure self-cleaning, ten Q10 collector voltage of triode rise to 15V；
IGBT module V1 input voltage is -15V in waveform, and ten Q10 collector voltage of triode is 0V, is drawn by seven D7 of diode
Low PWM drive signal closes IGBT module V1 by light-coupled isolation；
Two Z2 cathode voltage of Zener diode is 10V in waveform, and seven Q7 of diode is open-minded, closes IGBT over-current detection circuit；
Two Z2 cathode voltage of Zener diode is 0V in waveform, and seven Q7 of diode is open-minded, closes IGBT over-current detection circuit, Zener
Two Z2 anode of diode is pulled down to 0V；
It is 15V or so that transformer T1, which inputs one end IN1 maximum peak voltage, in waveform；
One Z1 cathode of Zener diode rises to 12V or more at t4 ~ t5 moment, the t5 moment is certainly after rectifying and wave-filtering in waveform
Reset input fault.
After t5 ~ moment, the voltage waveform of the same to t2 ~ t3 of 1 ~ 7 voltage waveform in waveform.
Schematically illustrating this driving circuit feature by the typical waveform of Fig. 2 embodiment is transmitted by transformer T1
IGBT over-current signal, this circuit save a feedback optocoupler, and circuit structure is simple, and number of devices is few, small in size.
All simple deformation or equivalent transformation of the invention, it is considered that fall into protection scope of the present invention.
Claims (7)
1. a kind of IGBT module driving circuit suitable for high-power inverter, including full-bridge DC/DC driving power circuit, one
Optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, under-voltage and fault secure circuit, full-bridge DC/DC drive
Dynamic power circuit includes transformer, and optical coupling isolation circuit connect with push-pull power amplifier circuit, under-voltage and fault secure circuit, pushes away
It draws power amplification circuit to connect with IGBT drive circuit, IGBT over-current detection circuit, IGBT over-current detection circuit and parallel IGBT
Driving circuit connection, it is characterised in that: it further include IGBT grid overvoltage crowbar, parallel IGBT gate driving circuit, it is described
Parallel IGBT gate driving circuit is connect with IGBT grid overvoltage crowbar, is additionally provided with transformer feedback over-current signal electricity
Road, transformer feedback over-current signal circuit include that transformer output feed circuit and transformer input identification circuit, transformer are defeated
Feed circuit samples over-current signal and feeds back to the input of transformer, transformer input identification circuit and under-voltage and error protection out
Circuit connection identifies over current fault or supply voltage under-voltage fault and is closed by optical coupling isolation circuit, push-pull power amplifier circuit
Close IGBT drive circuit.
2. IGBT module driving circuit according to claim 1, it is characterised in that: the transformer exports feed circuit packet
Include resistance five, triode five, diode four, resistance 12, four cathode connecting transformer output cathode of diode, four cathode of diode
Five collector of triode is connect, five emitter of triode connects transformer output negative pole, and transformer output negative pole connects drivingly, triode
Five base stage connecting resistances, five one end, another 12 one end of terminating resistor of resistance five and IGBT over-current detection circuit, resistance 12 are another
Termination is drivingly.
3. IGBT module driving circuit according to claim 1 or 2, it is characterised in that: the transformer input identification electricity
Road includes diode one, capacitor one, resistance one, Zener diode one, and one cathode connecting transformer of diode inputs one end, diode
One cathode connects one end of capacitor one, one end of resistance one, one cathode of Zener diode, and one anode of Zener diode connects under-voltage and event
Barrier protection circuit, one other end of capacitor, one other end of resistance and two one end of resistance link together and connect digitally.
4. IGBT module driving circuit according to claim 1 or 2, it is characterised in that: the IGBT over-current detection circuit
Including high-voltage diode six, resistance ten, resistance nine, capacitor four, Zener diode two, diode five, resistance six, triode seven,
Six cathode of high-voltage diode connects IGBT drive circuit, one end of the positive connecting resistance nine of high-voltage diode six, nine other end of resistance point
One end of two cathode of Zener diode, one end of capacitor four, resistance ten is not connect, and another termination driving power of resistance ten exports just
Pole, two cathode connecting transformer of Zener diode export feed circuit, seven emitter of triode, seven collector of triode, capacitor four
Drivingly, another terminating diode five of one end of seven base stage connecting resistance six of triode, resistance six is positive, diode for another termination
Five cathode connect the input of push-pull power amplifier circuit.
5. IGBT module driving circuit according to claim 1 or 2, it is characterised in that: described under-voltage and error protection electricity
Road includes resistance two, resistance three, triode six, diode seven, resistance 11, triode ten, one end of resistance three, resistance 11
One end connect input power respectively, three other end of resistance connects ten base stage of triode, six collector of triode respectively, and triode six is sent out
Emitter-base bandgap grading, ten emitter of triode, resistance two one end connect digitally, the other end of six base stage of triode and resistance two, transformation
The connection of device input identification circuit, 11 other end of resistance connect ten collector of triode, seven cathode of diode respectively, and diode seven is just
Pole connects optical coupling isolation circuit.
6. IGBT/gate according to claim 1, it is characterised in that: the parallel IGBT gate driving circuit
Including resistance seven, resistance eight, resistance 13, resistance 16, resistance 17, resistance 18, resistance July 1st end is recommended short with driving
Road output connection, seven other end of resistance distinguish the grid at connecting resistance Aug. 1st end, power semiconductor one, another terminating resistor of resistance eight
13 one end are simultaneously accessed digitally, the emitter of another termination power semiconductor switch one of resistance 13；Similarly, in parallel
In another way gate driving circuit, 16 one end of resistance and driving are recommended short circuit output and are connected, and 16 other end of resistance connects respectively
Resistance ten July 1st end, power semiconductor two grid, another 18 end of terminating resistor of resistance 17 simultaneously access digitally, resistance
The emitter of 18 another termination power semiconductor switches two.
7. IGBT module driving circuit according to claim 1, it is characterised in that: the IGBT grid overvoltage crowbar
Including diode eight, diode nine, diode ten, diode 11, resistance 14, resistance 15, resistance 19, resistance two
Ten, one end of capacitor five, capacitor six, capacitor seven, capacitor eight, resistance 14 connects negative driving power, and the other end is separately connected two
One end of the positive grade of pole pipe nine, capacitor six, the grid of nine cathode access power semiconductor switch device one of diode, capacitor six are another
The emitting stage into power semiconductor switch one is terminated, one end of resistance 15 connects positive driving power, and the other end connects respectively
Connect one end of the negative grade of diode eight, capacitor five, the grid of the positive access power semiconductor switch device one of diode eight, capacitor five
The emitting stage of other end access power semiconductor switch device one；Similarly, in another way grid overvoltage crowbar in parallel, electricity
It hinders 19 one end and connects negative driving power, the other end is separately connected one end of the positive grade of diode 11, capacitor eight, diode 11
The grid of cathode access power semiconductor switch device two, the transmitting of eight other end access power semiconductor switch device two of capacitor
One end of grade, resistance 20 connects positive driving power, and the other end is separately connected one end of the negative grade of diode ten, capacitor seven, two poles
The grid of the positive access power semiconductor switch device two of pipe ten, seven other end access power semiconductor switch device two of capacitor
Emitting stage.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109599843A (en) * | 2019-01-09 | 2019-04-09 | 深圳市德兰明海科技有限公司 | A kind of current foldback circuit and inverter of light-coupled isolation |
| CN110417251A (en) * | 2019-07-09 | 2019-11-05 | 广东美的制冷设备有限公司 | Pfc circuit and air conditioner |
| CN110492723A (en) * | 2019-08-01 | 2019-11-22 | 北京稳力科技有限公司 | A kind of fuel cell car high speed air compressor inverter driving circuit |
| CN112104346A (en) * | 2020-08-31 | 2020-12-18 | 电子科技大学 | IGBT high-voltage drive overcurrent and overvoltage protection circuit |
| CN112583393A (en) * | 2020-11-26 | 2021-03-30 | 南京轨道交通系统工程有限公司 | IGBT gate driver based on single power supply circuit |
| CN113708605A (en) * | 2021-08-16 | 2021-11-26 | 重庆长安新能源汽车科技有限公司 | IGBT module driving and protecting circuit |
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| CN112583393A (en) * | 2020-11-26 | 2021-03-30 | 南京轨道交通系统工程有限公司 | IGBT gate driver based on single power supply circuit |
| CN113708605A (en) * | 2021-08-16 | 2021-11-26 | 重庆长安新能源汽车科技有限公司 | IGBT module driving and protecting circuit |
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