CN207304498U - A kind of inverse E class power amplification circuits - Google Patents

A kind of inverse E class power amplification circuits Download PDF

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Publication number
CN207304498U
CN207304498U CN201721366631.0U CN201721366631U CN207304498U CN 207304498 U CN207304498 U CN 207304498U CN 201721366631 U CN201721366631 U CN 201721366631U CN 207304498 U CN207304498 U CN 207304498U
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China
Prior art keywords
capacitance
inductance
inverse
power amplification
amplification circuits
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CN201721366631.0U
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Inventor
马红玲
王岩琴
崔洪艺
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Ningbo Jingyuan Technology Co Ltd
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Ningbo Jingyuan Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

It the utility model is related to power amplification circuit field, there is provided a kind of inverse E class power amplification circuits.This inverse E class power amplification circuit, including：First choke inductance LRFC, the first inductance L1, the first metal-oxide-semiconductor M, the first capacitance C1, the second capacitance C2, the 3rd capacitance C3 and load, the first choke coil LRFCOne end be connected with power supply, the first choke coil LRFCThe other end be connected with first inductance L1 one end, one end of the second capacitance C2 and one end of the 3rd capacitance C3, the other end of first inductance L1 is connected with one end of the first metal-oxide-semiconductor M and is connected with one end of the first capacitance C1, the other end of 3rd capacitance C3 is connected with load, the first metal-oxide-semiconductor M, the first capacitance C1, the second capacitance C2 and the other end of load ground connection.The utility model provides inverse E class power amplification circuits, and improving more existing inverse E class power amplification circuits by structure improves power conversion efficiency and circuit stability.

Description

A kind of inverse E class power amplification circuits
Technical field
It the utility model is related to power amplification circuit, more particularly to a kind of inverse E class power amplification circuits.
Background technology
Radio-frequency power amplifier is located at the end of transmitter, is that consumed energy is most in whole system, produces heat highest Unit, be the Key Circuit in communication system.Radio-frequency power amplifier work efficiency directly determines whole emission system Power consumption, stability, and the demand to power supply and radiator and limitation.Particularly with battery powered handheld device, in phase Under conditions of same power output, efficiency of RF power amplifier is higher, and the battery powered time is longer, is conducive to hold The miniaturization of equipment.
As shown in the circuit diagram of the existing inverse E class power amplifiers of Fig. 1.Metal-oxide-semiconductor M is equivalent to a perfect switch, metal-oxide-semiconductor M leakages Pole is in parallel with the first capacitance C1 after connecting with inductance L；Choke inductance LRFCOne end be connected with power supply the other end connection inductance L；The direct powering load in DC component source in order to prevent, the capacitance C2 that connected on load circuit is (if load is exchange Load, the capacitance can be omitted).
In stable state：
If input signal is changed into high level from low level, metal-oxide-semiconductor M conductings, there is electric current process, inductance L at this time on metal-oxide-semiconductor M Charging, the moment node A point current potential of conducting is 0；If input signal is changed into low level, metal-oxide-semiconductor cut-off from high level.
But existing inverse E class power amplification circuits have following defect, after switching off, since there is inductance electric current cannot dash forward The characteristic of change, inductance L can produce induced electromotive force, the rise of A points voltage instantaneous, play on-off action metal-oxide-semiconductor M when frequency is very low Parasitic capacitance can be ignored, thus metal-oxide-semiconductor M breakdown may be damaged and be had energy loss；Switch closes again Moment, due to the effect of inductance L cannot be guaranteed A points voltage be 0, have energy loss.
In summary, it is necessary to carry out inverse E classes of the prior art improvement in structure, determine to close moment in switch, The voltage of node A is 0, and it is 100% to ensure delivery efficiency.
The content of the invention
The purpose of this utility model is the defects of being directed to the prior art, there is provided a kind of inverse E class power amplification circuits, the circuit More existing inverse E class power amplification circuits, can ensure the switch closure moment of inverse E class power amplification circuits, and the potential of node A is 0, it is ensured that the delivery efficiency of circuit is 100%, it has emission effciency higher compared to existing inverse E classes power amplification circuit, is stablized The characteristics of property is stronger.
In order to reach object above, the utility model uses following technical scheme：
A kind of inverse E class power amplification circuits, including：
First choke inductance LRFC, the first inductance L1, the first metal-oxide-semiconductor M, the first capacitance C1, the second capacitance C2, the 3rd electricity Hold C3 and load, the first choke coil LRFCOne end be connected with power supply, the first choke coil LRFCThe other end and first electricity Sense L1 one end, one end of the second capacitance C2 and one end of the 3rd capacitance C3 are connected, the other end of the first inductance L1 and the One end of one metal-oxide-semiconductor M is connected and is connected with one end of the first capacitance C1, the other end and load phase of the 3rd capacitance C3 Even, the other end ground connection of the first metal-oxide-semiconductor M, the other end ground connection of the first capacitance C1, the second capacitance C2's is another End ground connection, the other end ground connection of the load.
Further, the first capacitance C1, for protecting circuit,.
Further, the 3rd capacitance C3.
Further, the drain electrode of the first metal-oxide-semiconductor M is connected with the first inductance L1, the source electrode ground connection of the first metal-oxide-semiconductor M.
Further, first metal-oxide-semiconductor is the enhanced metal-oxide-semiconductor of N-channel.
Further, filter circuit is further included,
One end of the filter circuit and the first choke coil LRFCWith the first inductance L1 one end being connected and the second capacitance C2 One end be connected, the 3rd capacitance C3 of the other end of the filter circuit is connected with load.
Further, the filter circuit is tandem type filter circuit or parallel connection type filter circuit.
Further, the tandem type filter circuit includes：3rd inductance L3, the 4th capacitance C4, the 4th capacitance C4 One end and the first choke coil LRFCIt is connected with the first inductance L1 one end being connected, the other end and the 3rd of the 4th capacitance C4 One end of inductance L3 is connected, and the other end of the 3rd inductance L3 is connected through the 3rd capacitance C3 with load.
Further, the parallel connection type filter circuit includes：3rd inductance L3, the 4th capacitance C4, the 3rd inductance L3 One end and the first choke coil LRFCIt is connected with the first inductance L1 one end being connected, the other end and the 4th of the 3rd inductance L3 One end of capacitance C4 is connected and is connected through the 3rd capacitance C3 with load, the other end ground connection of the 4th capacitance C4.
The beneficial effects of the utility model are：Increase capacitance between NMOS tube M and inductance in the utility model, can Ensureing that NMOS tube M is not breakdown, improve circuit stability, and ensure that NMOS tube closes moment, the potential of node A is 0, from And so that the delivery efficiency of circuit is 100%.
Brief description of the drawings
Fig. 1 be in background technology the prior art against E class power amplification circuits；
Fig. 2 is the inverse E classes rf power amplifier circuit figure that the utility model embodiment provides；
Fig. 3 be the utility model embodiment provide added with filter circuit one against E class rf power amplifier circuit figures；
Fig. 4 be the utility model embodiment provide added with filter circuit two against E class rf power amplifier circuit figures.
Embodiment
It is specific embodiment of the utility model and with reference to attached drawing below, the technical solution of the utility model is made further Description, but the utility model is not limited to these embodiments.
Embodiment
A kind of inverse E class power amplification circuits are present embodiments provided, as shown in Figures 2 to 4, this inverse E classes power amplification electricity Road includes：
A kind of inverse E class power amplification circuits, including：
First choke inductance LRFC, the first inductance L1, the first metal-oxide-semiconductor M, the first capacitance C1, the second capacitance C2, the 3rd electricity Hold C3 and load, the first choke coil LRFCOne end be connected with power supply, the first choke coil LRFCThe other end and first electricity Sense L1 one end, one end of the second capacitance C2 and one end of the 3rd capacitance C3 are connected, the other end of the first inductance L1 and the One end of one metal-oxide-semiconductor M is connected and is connected with one end of the first capacitance C1, the other end and load phase of the 3rd capacitance C3 Even, the other end ground connection of the first metal-oxide-semiconductor M, the other end ground connection of the first capacitance C1, the second capacitance C2's is another End ground connection, the other end ground connection of the load.
Further, the first capacitance C1, for protecting circuit, and ensures metal-oxide-semiconductor M closure moments, node A voltage For 0.
Further, the 3rd capacitance C3, for the DC component in isolation circuitry.
Further, the drain electrode of the first metal-oxide-semiconductor M is connected with the first inductance L1, the source electrode ground connection of the first metal-oxide-semiconductor M.
Further, first metal-oxide-semiconductor is the enhanced metal-oxide-semiconductor of N-channel.
In stable state：
When input signal is changed into high level from low level, NMOS tube M conductings, have electric current process, electricity at this time on NMOS tube M Sense L1 fill can, internal resistance due to NMOS tube M and electric current influence, and the voltage of A points is close to the electricity on the zero, while second capacitance C2 at this time Drops.
When input signal is changed into low level from high level, NMOS tube M is closed, and flows through the electric current of the first inductance L1 to first Capacitance C1 charges, the rise of A points current potential.After the energy of inductance L is all released to the first capacitance C1, A points current potential is higher than the at this time The two ungrounded terminal potentials of capacitance C2, the first capacitance C1 chargings terminate to start to discharge by the first inductance L1, the electricity of the second capacitance C2 Pressure rises, while the current potential of A points declines.When NMOS tube M is turned on, C1, which just discharges, terminates, and A point current potentials drop to zero just.
What is provided in the present embodiment connects a first capacitance C1 between NMOS tube M and the first inductance L1 so that NMOS Pipe M and the first capacitance C1 is in parallel；After NMOS tube M is disconnected, charged by the first inductance L1 to the first capacitance C1, the electricity of node A Pressure will not increase moment, so as to protect NMOS tube M not breakdown, ensure that circuit stability.
Ideally, resistance is zero to nmos switch pipe M in the on-state, and the internal resistance of inductance is also 0.When the first chokes Enclose inductance LRFC, the first inductance L1 and during the second capacitance C2 appropriate values, the value of the first capacitance C1 of adjustment just can lead NMOS tube M Drain voltage drops to zero just when logical.Its instantaneous power consumption is 0 when NMOS tube M is turned on, and does not have any energy consumer in whole circuit Part, the delivery efficiency of circuit is 100%.
Further, inverse E class power amplification circuits provided in this embodiment further include filter circuit,
The first choke coil L in one end and power conversion circuit of the filter circuitRFCOne be connected with the first inductance L1 End and one end of the second capacitance C2 are connected, and the other end of the filter circuit is connected with load.
It is further preferred that being described with above-described embodiment, one end of the first capacitance C1 ground connection is earth-free to connect default electricity Source can reach same technique effect.
In the present embodiment, filter circuit is added in inverse E classes power amplification circuit, wherein filter circuit includes two kinds, Respectively tandem type filter circuit or parallel connection type filter circuit.
Wherein, the tandem type filter circuit includes：3rd inductance L3, the 3rd capacitance C3, the one of the 3rd capacitance C3 End and the first choke coil LRFCIt is connected with the first inductance L1 one end being connected, the other end and the 3rd inductance of the 3rd capacitance C3 One end of L3 is connected, and the other end of the 3rd inductance L3 is connected with load.
Wherein, the parallel connection type filter circuit includes：3rd inductance L3, the 3rd capacitance C3, the one of the 3rd inductance L3 End and the first choke coil LRFCIt is connected with the first inductance L1 one end being connected, the other end and the 3rd capacitance of the 3rd inductance L3 One end of C3 is connected with one end of load, the other end ground connection of the 3rd capacitance C3.
By setting filter circuit, enable to the electric current of predeterminated frequency to reach load, filter out the energy of idling frequency, So as to lift the efficient output of alternating current in the circuit.
The present embodiment, by designing a kind of inverse E class power amplification circuits, passes through the parallel connection one between NMOS tube M and inductance A capacitance, can ensure that NMOS tube M upon opening will not be breakdown, improve circuit stability, and close wink in NMOS tube M Between, it can be ensured that the potential of node A is 0, and the delivery efficiency for ensureing circuit is 100%.
The specific embodiments described herein are merely examples of the spirit of the present invention.The utility model institute Described specific embodiment can be done various modifications or additions or using similar by belonging to those skilled in the art Mode substitute, but without departing from the spirit of the present application or beyond the scope of the appended claims.

Claims (9)

  1. A kind of 1. inverse E class power amplification circuits, it is characterised in that including：
    First choke inductance LRFC, the first inductance L1, the first metal-oxide-semiconductor M, the first capacitance C1, the second capacitance C2, the 3rd capacitance C3 And load, the first choke coil LRFCOne end be connected with power supply, the first choke coil LRFCThe other end and the first inductance L1 One end of one end, one end of the second capacitance C2 and the 3rd capacitance C3 is connected, the other end and the first MOS of the first inductance L1 One end of pipe M is connected and is connected with one end of the first capacitance C1, and the other end of the 3rd capacitance C3 is connected with load, described The other end ground connection of first metal-oxide-semiconductor M, the other end ground connection of the first capacitance C1, the other end ground connection of the second capacitance C2, The other end ground connection of the load.
  2. A kind of 2. inverse E class power amplification circuits according to claim 1, it is characterised in that
    The first capacitance C1, for protecting circuit.
  3. A kind of 3. inverse E class power amplification circuits according to claim 1, it is characterised in that
    The 3rd capacitance C3, for the DC component in isolation circuitry.
  4. A kind of 4. inverse E class power amplification circuits according to claim 1, it is characterised in that
    The drain electrode of first metal-oxide-semiconductor M is connected with the first inductance L1, the source electrode ground connection of the first metal-oxide-semiconductor M.
  5. A kind of 5. inverse E class power amplification circuits according to claim 4, it is characterised in that
    First metal-oxide-semiconductor is the enhanced metal-oxide-semiconductor of N-channel.
  6. A kind of 6. inverse E class power amplification circuits according to claim 1, it is characterised in that filter circuit is further included,
    One end of the filter circuit and the first choke coil LRFCWith the one of the first inductance L1 one end being connected and the second capacitance C2 End is connected, and the 3rd capacitance C3 of the other end of the filter circuit is connected with load.
  7. A kind of 7. inverse E class power amplification circuits according to claim 6, it is characterised in that
    The filter circuit is tandem type filter circuit or parallel connection type filter circuit.
  8. A kind of 8. inverse E class power amplification circuits according to claim 7, it is characterised in that
    The tandem type filter circuit includes：3rd inductance L3, the 4th capacitance C4, one end and first of the 4th capacitance C4 are gripped Stream circle LRFCIt is connected with the first inductance L1 one end being connected, the other end of the 4th capacitance C4 and one end phase of the 3rd inductance L3 Even, the other end of the 3rd inductance L3 is connected through the 3rd capacitance C3 with load.
  9. A kind of 9. inverse E class power amplification circuits according to claim 8, it is characterised in that
    The parallel connection type filter circuit includes：3rd inductance L3, the 4th capacitance C4, one end and first of the 3rd inductance L3 are gripped Stream circle LRFCBe connected with the first inductance L1 one end being connected, the other end of the 3rd inductance L3 and one end of the 4th capacitance C4 and It is connected through the 3rd capacitance C3 with load, the other end ground connection of the 4th capacitance C4.
CN201721366631.0U 2017-10-12 2017-10-23 A kind of inverse E class power amplification circuits Active CN207304498U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107681987A (en) * 2017-10-12 2018-02-09 宁波德晶元科技有限公司 A kind of inverse E class power amplification circuits

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Publication number Priority date Publication date Assignee Title
WO2024011631A1 (en) * 2022-07-15 2024-01-18 深圳麦克韦尔科技有限公司 Electronic atomization apparatus

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Publication number Priority date Publication date Assignee Title
DE10252146B4 (en) * 2002-11-09 2012-03-29 Hüttinger Elektronik Gmbh + Co. Kg Method for generating a high-frequency alternating voltage and high-frequency power amplifier therefor
KR101091706B1 (en) * 2010-08-25 2011-12-08 한국과학기술원 Multi-band class-e power amplifier for a wireless terminal
CN107959478A (en) * 2016-10-18 2018-04-24 厦门马腾半导体有限公司 The efficient radio frequency power amplifier that a kind of power is easily adjusted
CN207304498U (en) * 2017-10-12 2018-05-01 宁波德晶元科技有限公司 A kind of inverse E class power amplification circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107681987A (en) * 2017-10-12 2018-02-09 宁波德晶元科技有限公司 A kind of inverse E class power amplification circuits

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