CN107546976A - Charge pump circuit and charge pump - Google Patents
Charge pump circuit and charge pump Download PDFInfo
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- CN107546976A CN107546976A CN201710911110.7A CN201710911110A CN107546976A CN 107546976 A CN107546976 A CN 107546976A CN 201710911110 A CN201710911110 A CN 201710911110A CN 107546976 A CN107546976 A CN 107546976A
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Abstract
The present invention relates to a kind of charge pump circuit and charge pump, including charge-discharge modules, charge initiation module, charge and discharge control module and pump electric capacity.By the first end output voltage in pump electric capacity, reduce the PAD of an output port.Making transistor voltage drop is not present on output link simultaneously, the transistor voltage drop avoided on output link influences efficiency, in order to the size of output link upper switch pipe, the volume based on this reduction charge pump circuit.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of charge pump circuit and charge pump.
Background technology
In recent years, various portable type electronic products are quickly grown.An important composition portion as electronic product
Point, power supply need to possess the specification requirements such as small efficiency high, quiescent current, small volume, cost be low.Therefore, charge pump circuit turns into head
The electronic product power source of choosing.
Two multiplying charge pumps are the main implementations of power boost in the application of electronic product mesolow.Traditional charge pump
Circuit, on the electric discharge link of connection voltage output end, connecting the port of plug-in protection circuit needs to be fabricated to pad (PAD),
Increase chip area.Simultaneously because pressure drop be present in the switching tube on electric discharge link, it is especially larger or defeated in driving output voltage
Go out in the higher application of power, in order to reduce the pressure drop of switching tube as far as possible, improve efficiency, it is necessary to accordingly increase the face of switching tube
Product, causes the volume of charge pump circuit larger, increases cost.
The content of the invention
Based on this, it is necessary to the defects of volume is larger be present for two traditional multiplying charge pump circuits, there is provided Yi Zhong electricity
Lotus pump circuit and charge pump.
Technical scheme provided by the present invention is as follows：
A kind of charge pump circuit, including charge-discharge modules, charge initiation module, charge and discharge control module and pump electric capacity.
The charge-discharge modules connect the charge initiation module, the charge and discharge control module, the pump electric capacity respectively
First end and the pump electric capacity the second end.
The charge-discharge modules are used to access supply voltage and the first clock signal.
The charge initiation module connects the second end of the pump electric capacity.
The charge initiation module is used to access the first clock signal and ground connection.
The charge and discharge control module connects the second end of the pump electric capacity respectively.
The charge and discharge control module is used to access second clock signal and supply voltage, and for being grounded.
The first end of the pump electric capacity is used for output voltage.
A kind of charge pump, including above-mentioned charge pump circuit.
Charge pump circuit provided by the present invention and charge pump, by the first end output voltage in pump electric capacity, reduce
The PAD of one output port.Transistor voltage drop is not present on output link simultaneously, avoids the transistor on output link
Pressure drop influences efficiency, in order to reduce the size of the switching tube on electric discharge link, the volume based on this reduction charge pump circuit.
Brief description of the drawings
Fig. 1 is the functional block diagram of charge pump circuit；
Fig. 2 is CLK1And CLK2Non-overlapping clock drive signals timing diagram；
Fig. 3 is the basic circuit diagram of charge pump circuit.
Embodiment
Purpose, technical scheme and technique effect for a better understanding of the present invention, below in conjunction with drawings and examples
Further explaining illustration is carried out to the present invention.State simultaneously, embodiments described below is only used for explaining the present invention, not
For limiting the present invention.
Two multiplying charge pumps are the main implementations of power boost in the application of electronic product mesolow.Traditional charge pump
Circuit, on the electric discharge link of connection voltage output end, connecting the port of plug-in protection circuit needs to be fabricated to pad (PAD),
Increase chip area.Simultaneously because pressure drop be present in the switching tube on electric discharge link, it is especially larger or defeated in driving output voltage
Go out in the higher application of power, in order to reduce the pressure drop of switching tube as far as possible, improve efficiency, it is necessary to accordingly increase the face of switching tube
Product, causes the volume of charge pump circuit larger, increases cost.
Based on this, in one embodiment, as shown in figure 1, be the functional block diagram of charge pump circuit, including charge-discharge modules
10th, charge initiation module 11, charge and discharge control module 12 and pump electric capacity CPUMP。
The charge-discharge modules 10 connect the charge initiation module 11, the charge and discharge control module 12, described respectively
Pump electric capacity CPUMPFirst end CP and the pump electric capacity CPUMPThe second end CN.
The charge-discharge modules 10 are used to access supply voltage ViAnd the first clock signal (VDD)
Charge initiation module 11 connects the pump electric capacity CPUMPThe second end CN.
Charge initiation module 11 is used to access the first clock signalAnd ground connection.
Charge and discharge control module 12 connects the pump electric capacity C respectivelyPUMPThe second end CN.
Charge and discharge control module 12 is used to access second clock signal CLK2With supply voltage Vi(VDD), and for being grounded.
The pump electric capacity CPUMPFirst end CP be used for output voltage Vout(AVDDCP)。
Wherein, charge pump circuit needs to access the first clock signal at workWith second clock signal CLK2, with
Drive charge pump circuit functions.As shown in Fig. 2 it is CLK1And CLK2Non-overlapping clock drive signals timing diagram, wherein period
Φ1For charging stage, period Φ2For discharge regime.Wherein, supply voltage Vi(VDD) respectively with first clock signalHigh level voltage and second clock signal CLK2High level voltage it is equal.
Alternatively, in addition to phase inverter, the phase inverter are used for the phasing back 180 degree of first clock signal,
By clock signal clk1180 degree is inverted, obtains the first clock signal
Based on above-mentioned non-overlapping clock drive signals sequential, in charging stage Φ1, the first clock signalWith
Two clock signal clks2High level (VDD) is in, charge initiation module 11 controls discharge and recharge mould by charge control module 12
Block 10 is pump electric capacity CPUMPCharging, by pump electric capacity CPUMPFirst end CP and the second end CN between voltage charge to VDD, wherein pump
Electric capacity CPUMPFirst end CP voltage be VDD, pump electric capacity CPUMPThe second end CN ground connection.In discharge regime Φ2, the first clock
SignalWith second clock signal CLK2Low level is in, charge initiation module 11 is controlled by charge control module 12
Charge-discharge modules 10 are pump electric capacity CPUMPElectric discharge, by pump electric capacity CPUMPThe second end CN draw high to supply voltage VDD, make pump electric capacity
CPUMPFirst end CP voltage be pulled to twice of VDD, twice of VDD voltage output is the output voltage of charge pump circuit
Vout(AVDDCP) two times of superchargings of output of charge pump circuit, are realized based on this.
Wherein, the charge pump circuit also positive pole including output diode D0, the output diode D0 connects the pump electricity
Hold CPUMPFirst end CP, negative pole is used for output voltage Vout(AVDDCP).By being connected to pump electric capacity CPUMPFirst end CP
Output diode D0, play a part of protecting charge pump circuit.Alternatively, output diode is Schottky diode.
Wherein, charge pump circuit also includes output capacitance Cout, the output capacitance CoutOne end two poles of the connection output
Pipe D0 negative pole, other end ground connection.Pass through output capacitance Cout, reduce element and be coupled to output voltage Vout(AVDDCP) make an uproar
Sound, play a part of saving electric charge, output charge and regulated output voltage.
Wherein, as shown in figure 3, basic circuit diagram for charge pump circuit, the charge-discharge modules 10 include the first charge and discharge
Electric transistor MP1, the second charge and discharge electric transistor and MP2With the 3rd charge and discharge electric transistor MP3；The first charge and discharge electric transistor MP1's
Grid is used to access the first clock signalDrain electrode connects the pump electric capacity CPUMPThe second end CN；First discharge and recharge
Transistor MP1Source electrode and the second charge and discharge electric transistor MP2Drain electrode be used for access supply voltage Vi(VDD), second charge and discharge
Electric transistor MP2Source electrode and the 3rd charge and discharge electric transistor MP3Source electrode connect the pump electric capacity CPUMPFirst end CP, institute
State the second charge and discharge electric transistor MP2Grid connect the 3rd charge and discharge electric transistor MP3Drain electrode.
Wherein, as shown in figure 3, the charge initiation module 11 includes charge initiation transistor MN1；The charge initiation is brilliant
Body pipe MN1Grid be used for access the first clock signalDrain electrode connects the pump electric capacity CPUMPThe second end CN, source electrode use
In ground connection.
Wherein, as shown in figure 3, charge and discharge control module 12 includes the first controlling transistor MN2a, OR circuit OR2 and
Two controlling transistor MN2b；The first input end of the OR circuit OR2 connects the pump electric capacity CPUMPThe second end CN, second
Input is used to access second clock signal CLK2；The first controlling transistor MN2aGrid be used for access second clock letter
Number CLK2, for source electrode for being grounded, drain electrode connects the second controlling transistor MN2bSource electrode, the second controlling transistor MN2b
Grid be used for access supply voltage Vi(VDD)；The output end of the OR circuit OR2 connects the 3rd charge and discharge electric transistor
MP3Grid；The second controlling transistor MN2bDrain electrode connect the 3rd charge and discharge electric transistor MP3Drain electrode.
The schematic circuit of the charge pump circuit of non-overlapping clock drive signals sequential and Fig. 3 below in conjunction with Fig. 2 explains this
The operation principle for the charge pump circuit that embodiment provides.
In charging stage Φ1, work as CLK2Time-sequential voltage from 0 to VDD, the first controlling transistor MN2aConducting, OR circuit
OR2 exports high level, the second controlling transistor MN2bConducting.Now d2 node voltages are pulled low to ground in charge pump circuit so that
Second charge and discharge electric transistor MP2Conducting, power voltage input terminal Vi(VDD) to pump electric capacity CPUMPCharged, pump electric capacity CPUMP's
Second end CN is pulled low to ground, pump electric capacity CPUMPFirst end CP voltages be VDD.In transition stage ΔΦ, the first clock signalWith second clock signal CLK2It is in low level, the first controlling transistor MN2aWith the second controlling transistor MN2bClose.
In discharge regime Φ2, pump electric capacity CPUMPThe second end CN voltage be VDD, OR circuit OR2 output is changed into VDD and pump electric capacity
CPUMPFirst end CP be then twice of VDD.Based on this, the 3rd charge and discharge electric transistor MP3Oxide layer both end voltage be VDD, the 3rd
Charge and discharge electric transistor MP3It is operated in safe condition.
Meanwhile the first controlling transistor MN2aWith the second controlling transistor MN2bTwice of vdd voltage can be born, so for
Any one transistor in charge pump circuit, the voltage between oxide layer and leakage/source are limited within VDD, make charge pump electric
Oxide layer overvoltage, the problem of preventing circuit reliability are not present in road.
The charge pump circuit that the present embodiment is provided, by pump electric capacity CPUMPFirst end CP output voltages, reduce
The PAD of one output port.Transistor voltage drop is not present on output link simultaneously, avoids the transistor on output link
Pressure drop influences efficiency, in order to reduce the 3rd discharge transistor, i.e. the 3rd charge and discharge electric transistor MP3Size, based on this reduction electricity
The volume of lotus pump circuit.
In one embodiment, there is provided a kind of charge pump, charge pump include the charge pump circuit of any of the above-described embodiment.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. charge pump circuit, it is characterised in that including charge-discharge modules, charge initiation module, charge and discharge control module and Pump electric capacity；The charge-discharge modules connect the charge initiation module, the charge and discharge control module, the of the pump electric capacity respectively One end and the second end of the pump electric capacity；The charge-discharge modules are used to access supply voltage and the first clock signal；The charge initiation module connects the second end of the pump electric capacity；The charge initiation module is used to access the first clock signal and ground connection；The charge and discharge control module connects the second end of the pump electric capacity respectively；The charge and discharge control module is used to access second clock signal and supply voltage, and for being grounded；The first end of the pump electric capacity is used for output voltage.
- 2. charge pump circuit according to claim 1, it is characterised in that also including output diode, two poles of the output The positive pole of pipe connects the first end of the pump electric capacity, and negative pole is used for output voltage.
- 3. charge pump circuit according to claim 2, it is characterised in that the output diode is Schottky diode.
- 4. charge pump circuit according to claim 2, it is characterised in that also including output capacitance, the output capacitance one End connects the negative pole of the output diode, and the other end is used to be grounded.
- 5. charge pump circuit according to claim 1, it is characterised in that it is brilliant that the charge-discharge modules include the first discharge and recharge Body pipe, the second charge and discharge electric transistor and the 3rd charge and discharge electric transistor；The grid of the first charge and discharge electric transistor is used to access the first clock signal, and drain electrode connects the second of the pump electric capacity End；The drain electrode of the source electrode of the first charge and discharge electric transistor and the second charge and discharge electric transistor is used to access supply voltage；The source electrode of the second charge and discharge electric transistor connects the of the pump electric capacity with the source electrode of the 3rd charge and discharge electric transistor One end；The grid of the second charge and discharge electric transistor connects the drain electrode of the 3rd charge and discharge electric transistor.
- 6. charge pump circuit according to claim 5, it is characterised in that it is brilliant that the charge initiation module includes charge initiation Body pipe；The grid of the charge initiation transistor is used to access the first clock signal, and drain electrode connects the second end of the pump electric capacity, Source electrode is used to be grounded.
- 7. charge pump circuit according to claim 6, it is characterised in that the charge and discharge control module includes the first control Transistor, OR circuit and the second controlling transistor；The first input end of the OR circuit connects the second end of the pump electric capacity, and the second input is used to access second clock Signal；The grid of first controlling transistor is used to access second clock signal, and source electrode is used to be grounded, drain electrode connection described the The source electrode of two controlling transistors, the grid of second controlling transistor are used to access supply voltage；The output end of the OR circuit connects the grid of the 3rd charge and discharge electric transistor；The drain electrode of second controlling transistor connects the drain electrode of the 3rd charge and discharge electric transistor.
- 8. charge pump circuit according to claim 1, it is characterised in that also including phase inverter, the phase inverter is used for will The phasing back 180 degree of first clock signal.
- 9. charge pump circuit according to claim 1, it is characterised in that the supply voltage respectively with first clock The high level voltage of signal and the high level voltage of second clock signal are equal.
- 10. a kind of charge pump, it is characterised in that including the charge pump circuit as described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710911110.7A CN107546976B (en) | 2017-09-29 | 2017-09-29 | Charge pump circuit and charge pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710911110.7A CN107546976B (en) | 2017-09-29 | 2017-09-29 | Charge pump circuit and charge pump |
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| Publication Number | Publication Date |
|---|---|
| CN107546976A true CN107546976A (en) | 2018-01-05 |
| CN107546976B CN107546976B (en) | 2022-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710911110.7A Active CN107546976B (en) | 2017-09-29 | 2017-09-29 | Charge pump circuit and charge pump |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299173A (en) * | 2019-07-05 | 2019-10-01 | 合肥联诺科技有限公司 | A kind of controlled discharge module for NOR FLASH programmed process |
| WO2021142829A1 (en) * | 2020-01-19 | 2021-07-22 | 深圳市汇顶科技股份有限公司 | Charge pump circuit, chip, and electronic device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020005751A1 (en) * | 2000-05-10 | 2002-01-17 | Takao Myono | Charge-pump circuit and control method thereof |
| JP2004248451A (en) * | 2003-02-14 | 2004-09-02 | Auto Network Gijutsu Kenkyusho:Kk | Charge pumping circuit |
| CN1671031A (en) * | 2004-03-19 | 2005-09-21 | 株式会社半导体能源研究所 | Booster circuit, semiconductor device, and electronic apparatus |
| US20110089997A1 (en) * | 2009-10-19 | 2011-04-21 | Renesas Electronics Corporation | Power supply circuit |
| CN102324840A (en) * | 2011-05-13 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Charge pump and working method thereof |
| CN104716827A (en) * | 2013-12-11 | 2015-06-17 | 恩智浦有限公司 | DC-DC voltage converter and conversion method |
| CN105162321A (en) * | 2015-10-26 | 2015-12-16 | 无锡中感微电子股份有限公司 | Charge pump used in G-class amplifier |
| CN106655757A (en) * | 2015-11-04 | 2017-05-10 | 上海贝岭股份有限公司 | Capacitor charge pump |
| CN107040133A (en) * | 2017-03-13 | 2017-08-11 | 南京中感微电子有限公司 | Charge pump |
| CN207251472U (en) * | 2017-09-29 | 2018-04-17 | 珠海市杰理科技股份有限公司 | Charge pump circuit and charge pump |
-
2017
- 2017-09-29 CN CN201710911110.7A patent/CN107546976B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020005751A1 (en) * | 2000-05-10 | 2002-01-17 | Takao Myono | Charge-pump circuit and control method thereof |
| JP2004248451A (en) * | 2003-02-14 | 2004-09-02 | Auto Network Gijutsu Kenkyusho:Kk | Charge pumping circuit |
| CN1671031A (en) * | 2004-03-19 | 2005-09-21 | 株式会社半导体能源研究所 | Booster circuit, semiconductor device, and electronic apparatus |
| US20110089997A1 (en) * | 2009-10-19 | 2011-04-21 | Renesas Electronics Corporation | Power supply circuit |
| CN102324840A (en) * | 2011-05-13 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Charge pump and working method thereof |
| CN104716827A (en) * | 2013-12-11 | 2015-06-17 | 恩智浦有限公司 | DC-DC voltage converter and conversion method |
| CN105162321A (en) * | 2015-10-26 | 2015-12-16 | 无锡中感微电子股份有限公司 | Charge pump used in G-class amplifier |
| CN106655757A (en) * | 2015-11-04 | 2017-05-10 | 上海贝岭股份有限公司 | Capacitor charge pump |
| CN107040133A (en) * | 2017-03-13 | 2017-08-11 | 南京中感微电子有限公司 | Charge pump |
| CN207251472U (en) * | 2017-09-29 | 2018-04-17 | 珠海市杰理科技股份有限公司 | Charge pump circuit and charge pump |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299173A (en) * | 2019-07-05 | 2019-10-01 | 合肥联诺科技有限公司 | A kind of controlled discharge module for NOR FLASH programmed process |
| WO2021142829A1 (en) * | 2020-01-19 | 2021-07-22 | 深圳市汇顶科技股份有限公司 | Charge pump circuit, chip, and electronic device |
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| Publication number | Publication date |
|---|---|
| CN107546976B (en) | 2022-03-04 |
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Address after: 519000 No. 333, Kexing Road, Xiangzhou District, Zhuhai City, Guangdong Province Applicant after: ZHUHAI JIELI TECHNOLOGY Co.,Ltd. Address before: Floor 1-107, building 904, ShiJiHua Road, Zhuhai City, Guangdong Province Applicant before: ZHUHAI JIELI TECHNOLOGY Co.,Ltd. |
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