CN207069578U - A kind of reversal of power protection circuit - Google Patents

A kind of reversal of power protection circuit Download PDF

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Publication number
CN207069578U
CN207069578U CN201720508677.5U CN201720508677U CN207069578U CN 207069578 U CN207069578 U CN 207069578U CN 201720508677 U CN201720508677 U CN 201720508677U CN 207069578 U CN207069578 U CN 207069578U
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China
Prior art keywords
circuit
high pressure
reversal
grid end
vddi
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Withdrawn - After Issue
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CN201720508677.5U
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Chinese (zh)
Inventor
逯建武
李兆桂
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Pu Ran Semiconductor (shanghai) Co Ltd
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Pu Ran Semiconductor (shanghai) Co Ltd
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Priority to CN201720508677.5U priority Critical patent/CN207069578U/en
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Abstract

The utility model discloses a kind of reversal of power protection circuit, it is included：High pressure NMOS pipe, its source are connected external power source VDD with substrate terminal respectively, and its drain terminal connects the input of the internal circuit as the output end of the voltage reversal protection circuit, and the drain terminal voltage is VDDI；Charge pump circuit, its input connection VDDI, its ground terminal ground connection GND；Grid end control circuit, its input connect the output end of the charge pump circuit, and its output end connects the grid end of the high pressure NMOS pipe, its first reference edge connection external power source VDD, its second reference edge connection VDDI.Its advantage is：The reversal of power protection circuit possesses relatively low startup operating voltage to reduce the power attenuation of reverse protection pipe while reverse protection function is realized.

Description

A kind of reversal of power protection circuit
Technical field
It the utility model is related to analog power technical field, and in particular to a kind of reversal of power protection circuit.
Background technology
Such as Fig. 1, conventional counter protection circuit is all connect using NMOS tube as reverse protection circuit, source, substrate terminal, grid end VDD, drain terminal are reverse protection circuit output voltage VDDI.Wherein, VDD=VDDI+Vthn（VthnFor NMOS tube turn-on threshold voltage, Typically in 0.7V or so）, or VDD=VDDI+VBE（VBEFor the parasitic diode conduction voltage drop of NMOS tube substrate terminal to drain terminal, Typically in 0.7V or so）.Above-mentioned 0.7V or so voltage causes circuit start voltage higher, and power consumption is bigger than normal etc..
Utility model content
The purpose of this utility model is to provide a kind of reversal of power protection circuit, and connection needs to be reversed the inside of protection Circuit, it uses high pressure NMOD pipes as reverse protection pipe, by increasing charge pump circuit and grid end control circuit so that the electricity Source reverse protection circuit possesses relatively low startup operating voltage while reverse protection function is realized.
In order to achieve the above object, the utility model is achieved through the following technical solutions：
A kind of reversal of power protection circuit, it is characterized in that, the output end of reversal of power protection circuit connection one need by The input of the internal circuit of reverse protection, the output head grounding GND of the internal circuit, described reversal of power protection circuit bag Contain：
High pressure NMOS pipe, its source are connected external power source VDD with substrate terminal respectively, and its drain terminal is protected as the voltage reversal The output end of protection circuit connects the input of the internal circuit, and the drain terminal voltage is VDDI；
Charge pump circuit, its input connection VDDI, its ground terminal ground connection GND；
Grid end control circuit, its input connect the output end of the charge pump circuit, and its output end connects the high pressure The grid end of NMOS tube, its first reference edge connection external power source VDD, its second reference edge connection VDDI；
When external power source VDD current potentials are less than ground GND current potentials, charge pump circuit do not work, and grid end control circuit is by high pressure The grid end of NMOS tube turns off high pressure NMOS pipe with source short circuit, realizes that reversal of power is protected；
When external power source VDD current potentials, GND current potentials, charge pump circuit functions, the output end of charge pump circuit export above Ground The grid end of high pressure NMOS pipe and VPP short circuits are made high pressure by one current potential VPP high compared with its input VDDI, grid end control circuit NMOS tube is opened, now VDD=Vdson+ VDDI, wherein, VdsonFor source and drain pressure difference after the conducting of high pressure NMOS pipe, realize relatively low Work starts voltage.
Above-mentioned reversal of power protection circuit, wherein, described grid end control circuit includes：
First high voltage PMOS pipe, its drain terminal connect the grid end of high pressure NMOS pipe, and its source is connected described respectively with substrate terminal The output end of charge pump circuit, its grid end connection VDDI；
First resistor, its one end connect the grid end of high pressure NMOS pipe, its other end connection external power source VDD.
Above-mentioned reversal of power protection circuit, wherein, described grid end control circuit includes：
Second high voltage PMOS pipe, its grid end connection VDDI, its source are connected the output of charge pump circuit with substrate terminal respectively End, its drain terminal connect the grid end of high pressure NMOS pipe；
Current mirror, it is made up of the first NMOS tube and the second NMOS tube；The source of first NMOS tube is distinguished with substrate terminal Connect external power source VDD, the grid and drain electrode short circuit of the first NMOS tube；The source of second NMOS tube connects respectively with substrate terminal External power source VDD is met, the grid end of the second NMOS tube connects the grid end that the first NMOS is closed, the drain terminal connection high pressure of the second NMOS tube The grid end of NMOS tube；
Second resistance, one end connection VDDI, the other end connect the drain terminal of the first NMOS tube.
Above-mentioned reversal of power protection circuit, wherein,
Described first resistor uses poly resistance.
Above-mentioned reversal of power protection circuit, wherein,
Described second resistance uses poly resistance.
The utility model has advantages below compared with prior art：The reversal of power protection circuit is realizing reverse protection Possesses relatively low startup operating voltage while function to reduce the power attenuation of reverse protection pipe.
Brief description of the drawings
Fig. 1 is the circuit diagram of reversal of power protection circuit in the prior art；
Fig. 2 is the circuit diagram of reversal of power protection circuit of the present utility model；
Fig. 3 is the physical circuit of the reversal of power protection circuit in the embodiment of the utility model one；
Fig. 4 is the physical circuit of the reversal of power protection circuit in the embodiment of the utility model one.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferable specific embodiment in detail, the utility model is done and further explained State.
As shown in Fig. 2 a kind of reversal of power protection circuit, the output end connection one of the reversal of power protection circuit needs The input of the internal circuit of protection is reversed, the output head grounding GND of the internal circuit, internal circuit is as reverse protection electricity The load circuit on road, that is, need to be reversed the internal module of protection, described reversal of power protection circuit includes：High pressure NMOS Pipe, its source are connected external power source VDD with substrate terminal respectively, and its drain terminal connects as the output end of the voltage reversal protection circuit The input of the internal circuit is connect, the drain terminal voltage is VDDI, in this example, point using 6V as NMOS tube high pressure and low pressure Boundary；Charge pump circuit（charge pump）, its input connection VDDI, its ground terminal ground connection GND, charge pump circuit structure is certainly Choosing, its operation principle is to move electric charge to high potential from low potential using electric capacity, makes output current potential higher than input current potential；Grid end control Circuit processed, its input connect the output end of the charge pump circuit, and its output end connects the grid end of the high pressure NMOS pipe, its First reference edge vd1 connection external power source VDD, its second reference edge vd2 connections VDDI.
Work as reversal of power（External power source VDD current potentials are less than ground GND current potentials）, charge pump circuit do not work, grid end control electricity The grid end of high pressure NMOS pipe and source short circuit turn off high pressure NMOS pipe by road, realize that reversal of power is protected；
When power supply is positive（External power source VDD current potentials GND current potentials above Ground）, charge pump circuit functions, charge pump circuit Output end exports a current potential VPP high compared with its input VDDI, and grid end control circuit is short by the grid end of high pressure NMOS pipe and VPP Connecing opens high pressure NMOS pipe, now VDD=Vdson+ VDDI, wherein, VdsonIt is real for source and drain pressure difference after the conducting of high pressure NMOS pipe Existing relatively low work starts voltage.
The implementation of grid end control circuit of the present utility model has a lot, but must include two circuits：Grid end is opened Circuit, grid end breaking circuit；Work as reversal of power, grid end breaking circuit work, grid end open circuit does not work or do not influenceed grid Hold breaking circuit；When power supply is positive, grid end open circuit work, the grid end breaking circuit grid end that do not work or do not influence opens electricity Road.
2 specific embodiment circuit structures, but not limited to this are lifted below：
Embodiment one
As shown in figure 3, described grid end control circuit includes：First high voltage PMOS pipe PMOS1, its drain terminal connection high pressure The grid end of NMOS tube, its source are connected the output end of the charge pump circuit with substrate terminal, its grid end connection VDDI, originally shown respectively In example, the boundary using 6V as PMOS high pressure and low pressure；First resistor R1, using poly resistance, its one end connection high pressure The grid end of NMOS tube, its other end connection external power source VDD.It should be noted that R1 can not use diffusion resistance or trap Resistance, because diffusion resistance or trap resistance have parasitic diode with SUB ends.
The operation principle of foregoing circuit is, as reversal of power (VDD current potentials are less than GND current potentials), PMOS1 shut-offs, resistance R1 NMOS grid end current potentials are pulled down to source current potential, high pressure NMOS pipe is also switched off.GND to VDD no current paths, circuit realiration are anti- To defencive function.When power supply forward direction (VDD current potentials are higher than GND current potentials), charge pump circuit functions, so VPP is higher than VDDI.When VPP-VDDI>VTH_P(VTH_PFor high voltage PMOS pipe PMOS1 turn-on threshold voltage), PMOS1 will be opened.When PMOS1 open, its Drain terminal current potential is equal to its source current potential, i.e. NMOS tube grid end current potential is equal to VPP current potentials.Work as VPP-VDDI>VTH_N(VTH_NFor high pressure The turn-on threshold voltage of NMOS tube), high pressure NMOS pipe is also opened.High pressure NMOS pipe is opened, VDD=Vdson+ VDDI, wherein VdsonFor the source and drain conduction voltage drop of high pressure NMOS pipe, generally hundreds of or even tens mV.And conventional counter protection circuit, VDD= VBE+ VDDI, VBEAbout 0.7V.Based on Vdson<VBE, so compared with traditional circuit, this circuit start voltage is relatively low, and The power attenuation of high pressure NMOS pipe is relatively low.
Embodiment two
As shown in figure 4, described grid end control circuit includes：Second high voltage PMOS pipe PMOS1, its grid end connection VDDI, Its source is connected the output end of charge pump circuit with substrate terminal respectively, and its drain terminal connects the grid end of high pressure NMOS pipe, in this example, Boundary using 6V as PMOS high pressure and low pressure；Current mirror, it is made up of the first NMOS tube NMOS1 and the second NMOS tube NMOS2； The source of first NMOS tube is connected external power source VDD, the grid and drain electrode short circuit of the first NMOS tube with substrate terminal respectively；Institute The source for stating the second NMOS tube is connected external power source VDD with substrate terminal respectively, and the grid end of the second NMOS tube connects the first NMOS and closed Grid end, the second NMOS tube drain terminal connection high pressure NMOS pipe grid end；Second resistance R1, using poly resistance, one end connection VDDI, the other end connect the drain terminal of the first NMOS tube.
Fig. 3 circuit is compared, this grid end control circuit is replaced by PMOS1, NMOS1, NMOS2, R1.The work of foregoing circuit Principle is, when reversal of power (VDD current potentials are less than GND current potentials), the shut-off of PMOS1 pipes.NOMS2 and NMOS1 is current-mirror structure, when Resistance R1 has electric current to flow through, and NMOS2 moves NMOS tube grid end current potential to vdd terminal current potential.The source of high pressure NMOS pipe and grid end end Short circuit, high pressure NMOS pipe shut-off, GND to VDD no current paths, circuit realiration reverse protection function.As power supply forward direction (VDD Current potential is higher than GND current potentials), same charge pump circuit functions, output current potential VPP is relative, and input current potential VDDI is elevated.With Fig. 3 electricity Road, PMOS1 are opened, and high pressure NMOS pipe is also opened.VDD = Vdson+ VDDI.Wherein NMOS1, NMOS2 are in power supply forward direction situation Under be turned off.
In summary, reversal of power protection circuit of the present utility model, is realized under reversal of power mode of operation, charge pump Circuit does not work, and grid end control circuit turns off high pressure NMOS pipe, reversely pressure-resistant up to tens volts, while realizes in power supply just Under the conditions of, low start voltage drops.
Although content of the present utility model is discussed in detail by above preferred embodiment, but it should be appreciated that on The description stated is not considered as to limitation of the present utility model.After those skilled in the art have read the above, for A variety of modifications and substitutions of the present utility model all will be apparent.Therefore, the scope of protection of the utility model should be by appended Claim limit.

Claims (5)

  1. A kind of 1. reversal of power protection circuit, it is characterised in that the reversal of power protection circuit output end connection one need by The input of the internal circuit of reverse protection, the output head grounding GND of the internal circuit, described reversal of power protection circuit bag Contain：
    High pressure NMOS pipe, its source are connected external power source VDD with substrate terminal respectively, and its drain terminal protects electricity as the reversal of power The output end on road connects the input of the internal circuit, and the drain terminal voltage is VDDI；
    Charge pump circuit, its input connection VDDI, its ground terminal ground connection GND；
    Grid end control circuit, its input connect the output end of the charge pump circuit, and its output end connects the high pressure NMOS The grid end of pipe, its first reference edge connection external power source VDD, its second reference edge connection VDDI；
    When external power source VDD current potentials are less than ground GND current potentials, charge pump circuit do not work, and grid end control circuit is by high pressure NMOS pipe Grid end and source short circuit turn off high pressure NMOS pipe, realize that reversal of power is protected；
    When external power source VDD current potentials, GND current potentials, charge pump circuit functions, the output end of charge pump circuit export one above Ground The grid end of high pressure NMOS pipe and VPP short circuits are made high pressure NMOS pipe by the current potential VPP high compared with its input VDDI, grid end control circuit Open, now VDD=Vdson+ VDDI, wherein, VdsonFor source and drain pressure difference after the conducting of high pressure NMOS pipe, realize that relatively low work is opened Dynamic voltage.
  2. 2. reversal of power protection circuit as claimed in claim 1, it is characterised in that described grid end control circuit includes：
    First high voltage PMOS pipe, its drain terminal connect the grid end of high pressure NMOS pipe, and its source is connected the electric charge with substrate terminal respectively The output end of pump circuit, its grid end connection VDDI；
    First resistor, its one end connect the grid end of high pressure NMOS pipe, its other end connection external power source VDD.
  3. 3. reversal of power protection circuit as claimed in claim 1, it is characterised in that described grid end control circuit includes：
    Second high voltage PMOS pipe, its grid end connection VDDI, its source are connected the output end of charge pump circuit with substrate terminal respectively, its Drain terminal connects the grid end of high pressure NMOS pipe；
    Current mirror, it is made up of the first NMOS tube and the second NMOS tube；The source of first NMOS tube is connected respectively with substrate terminal External power source VDD, the grid and drain electrode short circuit of the first NMOS tube；The source of second NMOS tube is connected outer respectively with substrate terminal Portion power vd D, the grid end of the second NMOS tube connect the grid end that the first NMOS is closed, the drain terminal connection high pressure NMOS pipe of the second NMOS tube Grid end；
    Second resistance, one end connection VDDI, the other end connect the drain terminal of the first NMOS tube.
  4. 4. reversal of power protection circuit as claimed in claim 2, it is characterised in that：
    Described first resistor uses poly resistance.
  5. 5. reversal of power protection circuit as claimed in claim 3, it is characterised in that：
    Described second resistance uses poly resistance.
CN201720508677.5U 2017-05-09 2017-05-09 A kind of reversal of power protection circuit Withdrawn - After Issue CN207069578U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720508677.5U CN207069578U (en) 2017-05-09 2017-05-09 A kind of reversal of power protection circuit

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Application Number Priority Date Filing Date Title
CN201720508677.5U CN207069578U (en) 2017-05-09 2017-05-09 A kind of reversal of power protection circuit

Publications (1)

Publication Number Publication Date
CN207069578U true CN207069578U (en) 2018-03-02

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039964A (en) * 2017-05-09 2017-08-11 普冉半导体（上海）有限公司 A kind of reversal of power protection circuit
CN108711918A (en) * 2018-08-22 2018-10-26 上海艾为电子技术股份有限公司 A kind of switched charge circuit
CN111707962A (en) * 2020-08-20 2020-09-25 上海南麟电子股份有限公司 Alternating current detection circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039964A (en) * 2017-05-09 2017-08-11 普冉半导体（上海）有限公司 A kind of reversal of power protection circuit
CN107039964B (en) * 2017-05-09 2019-05-07 普冉半导体（上海）有限公司 A kind of reversal of power protection circuit
CN108711918A (en) * 2018-08-22 2018-10-26 上海艾为电子技术股份有限公司 A kind of switched charge circuit
CN108711918B (en) * 2018-08-22 2023-12-12 上海艾为电子技术股份有限公司 Switch charging circuit
CN111707962A (en) * 2020-08-20 2020-09-25 上海南麟电子股份有限公司 Alternating current detection circuit

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Granted publication date: 20180302

Effective date of abandoning: 20190507