CN205958990U - Drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump - Google Patents
Drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump Download PDFInfo
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- CN205958990U CN205958990U CN201620790857.2U CN201620790857U CN205958990U CN 205958990 U CN205958990 U CN 205958990U CN 201620790857 U CN201620790857 U CN 201620790857U CN 205958990 U CN205958990 U CN 205958990U
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Abstract
The utility model relates to a drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump, including load linkage unit and voltage -controlled drive unit, wherein the load linkage unit passes through MOS pipe and the voltage -controlled unit connection of drive, and the load linkage unit connects MOS's drain electrode, the source electrode ground connection of MOS pipe, and the grid of MOS pipe connects the voltage -controlled unit of drive. The utility model discloses can realize: at a MOS pipe, switch load solenoid valve and booster pump that can be reliable under the condition of a switching diode, two resistance, an electric capacity and a socket.
Description
Technical field
This utility model is related to drive circuit field, more particularly, to a kind of small volume, low cost, high reliability, makes an uproar
Low voice, the drive circuit based on metal-oxide-semiconductor drive magnetic valve and booster pump of small power consumption.
Background technology
It is all the working condition controlling electromagnetic valve and pump using relay on most products at present, but relay is originally
Body is bulky, and thermal losses is big, the degree of integration of strong influence to circuit board.And due to integrated to product and cost requirement
Improve, need a kind of low cost, the circuit arrangement of small volume, low-loss power consumption and high reliability.
Content of the invention
The purpose of this utility model is to solve the above problems, there is provided a kind of more simple and practical technical scheme,
I.e. metal-oxide-semiconductor drive magnetic valve and booster pump.
To achieve these goals, the technical solution of the utility model is as follows：
A kind of drive circuit based on metal-oxide-semiconductor drive magnetic valve and booster pump, including load connection unit and voltage-controlled driving
Unit, wherein said load connection unit is passed through metal-oxide-semiconductor and is connected with driving voltage-controlled element, and load connection unit connects the drain electrode of MOS,
The source ground of metal-oxide-semiconductor, the grid of metal-oxide-semiconductor connects driving voltage-controlled element.
Above-mentioned drive circuit passes through to control the voltage between gate-source, when the cut-in voltage that Ugs voltage is higher than metal-oxide-semiconductor,
Metal-oxide-semiconductor conducting and Ugs bigger conducting channel resistance is less, now external loading is added in the voltage of drain electrode and just can produce drain electrode electricity
Stream, thus drive loaded work piece.
Described metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
Described load connection unit includes diode D1 and the electric capacity C1 being connected in parallel, and the negative pole of diode D1 connects+24V electricity
Source, the positive pole of diode D1 connects the drain electrode of MOS.
Described driving voltage-controlled element includes resistance R1 and R2 being connected in parallel, one end ground connection of resistance R2, the other end and electricity
The grid of one end of resistance R1 and metal-oxide-semiconductor connects, and the other end of resistance R1 is outfan.
Compared with prior art, the beneficial effects of the utility model are：
The above-mentioned switch to control metal-oxide-semiconductor for the voltage controlling metal-oxide-semiconductor grid source electrode that is driven through is thus bear outside effective control
The break-make carrying.To reach the effect of drive magnetic valve and booster pump.Secondly of the present utility model driving is driven using metal-oxide-semiconductor
Dynamic, that can reduce electromagnetic valve and booster pump burns out situation.
This utility model enables：In a metal-oxide-semiconductor, a diode, two resistance, an electric capacity and a socket
Under the conditions of being capable of reliably switching load electromagnetic valve and booster pump.There is element few, circuit is simple, reliability is high, noise is low, ring
Answer speed fast, the features such as applied widely.
Brief description
Fig. 1 is this utility model metal-oxide-semiconductor drive magnetic valve and the schematic diagram of supercharging pump circuit.
Specific embodiment
Below in conjunction with the accompanying drawings this utility model is further described, but embodiment of the present utility model is not limited to
This.
As Fig. 1, a kind of drive circuit based on metal-oxide-semiconductor drive magnetic valve and booster pump, including load connection unit and pressure
Control driver element, wherein said load connection unit is passed through metal-oxide-semiconductor and is connected with driving voltage-controlled element, and load connection unit meets MOS
Drain electrode, the source ground of metal-oxide-semiconductor, the grid of metal-oxide-semiconductor connects driving voltage-controlled element, described metal-oxide-semiconductor be N-type metal-oxide-semiconductor, specifically,
Load connection unit is to load metal-oxide-semiconductor drain electrode by main power source through overload, specifically includes the diode D1 being connected in parallel and electricity
Hold C1, the negative pole of diode D1 connects+24V power supply, and the positive pole of diode D1 connects the drain electrode of MOS.Described driving voltage-controlled element includes
One end ground connection of resistance R1 and R2 being connected in parallel, resistance R2, the other end is connected with one end of resistance R1 and the grid of metal-oxide-semiconductor,
The other end of resistance R1 connects single-chip processor i/o mouth.
Above-mentioned tool drives voltage-controlled element to be connected to the I/O mouth of single-chip microcomputer by one end of resistance R1, and the other end is connected to metal-oxide-semiconductor
The grid of Q1 and pull down resistor R2 to GND；Metal-oxide-semiconductor source electrode directly meets GND.
Above-mentioned drive circuit passes through to control the voltage between gate-source, when the cut-in voltage that Ugs voltage is higher than metal-oxide-semiconductor,
Metal-oxide-semiconductor conducting and Ugs bigger conducting channel resistance is less, now external loading is added in the voltage of drain electrode and just can produce drain electrode electricity
Stream, thus drive loaded work piece.
The operation principle of the present embodiment：
With reference to Fig. 1
When machinery requirement electromagnetic valve and pump work, single-chip processor i/o mouth OUT exports high level signal, makes metal-oxide-semiconductor Ugs electricity
Pressure higher than metal-oxide-semiconductor cut-in voltage thus turning on, now external loading is added in the voltage of drain electrode and just can produce drain current, thus
Drive loaded work piece.When OUT exports low level, metal-oxide-semiconductor Ugs voltage is made to be unable to reach the cut-in voltage of metal-oxide-semiconductor thus being not turned on,
Now electromagnetic valve and pump are closed.
Above-described embodiment of the present utility model, does not constitute the restriction to this utility model protection domain.Appoint
Where done modification within spiritual principles of the present utility model, equivalent and improvement etc., should be included in this practicality new
Within the claims of type.
Claims (4)
1. a kind of drive circuit based on metal-oxide-semiconductor drive magnetic valve and booster pump it is characterised in that include load connection unit and
Voltage-controlled driver element, wherein said load connection unit is passed through metal-oxide-semiconductor and is connected with driving voltage-controlled element, and load connection unit connects
The drain electrode of MOS, the source ground of metal-oxide-semiconductor, the grid of metal-oxide-semiconductor connects driving voltage-controlled element.
2. drive circuit according to claim 1 is it is characterised in that described metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
3. drive circuit according to claim 2 is it is characterised in that described load connection unit includes two being connected in parallel
Level pipe D1 and electric capacity C1, the negative pole of diode D1 connects+24V power supply, and the positive pole of diode D1 connects the drain electrode of MOS.
4. drive circuit according to claim 3 is it is characterised in that described driving voltage-controlled element includes the electricity being connected in parallel
One end ground connection of resistance R1 and R2, resistance R2, the other end is connected with one end of resistance R1 and the grid of metal-oxide-semiconductor, and resistance R1's is another
Hold as outfan.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620790857.2U CN205958990U (en) | 2016-07-26 | 2016-07-26 | Drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620790857.2U CN205958990U (en) | 2016-07-26 | 2016-07-26 | Drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205958990U true CN205958990U (en) | 2017-02-15 |
Family
ID=57971392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620790857.2U Active CN205958990U (en) | 2016-07-26 | 2016-07-26 | Drive circuit based on MOS pipe drives moving electromagnetic valve and booster pump |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205958990U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110780614A (en) * | 2018-07-26 | 2020-02-11 | 现代摩比斯株式会社 | Electronic relay device |
| CN113864826A (en) * | 2021-09-03 | 2021-12-31 | Tcl家用电器（中山）有限公司 | Cooking appliance and monitoring method thereof |
-
2016
- 2016-07-26 CN CN201620790857.2U patent/CN205958990U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110780614A (en) * | 2018-07-26 | 2020-02-11 | 现代摩比斯株式会社 | Electronic relay device |
| CN110780614B (en) * | 2018-07-26 | 2022-08-02 | 现代摩比斯株式会社 | Electronic relay device |
| CN113864826A (en) * | 2021-09-03 | 2021-12-31 | Tcl家用电器（中山）有限公司 | Cooking appliance and monitoring method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |