CN104009617A - Simple low-voltage grid driving circuit - Google Patents
Simple low-voltage grid driving circuit Download PDFInfo
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- CN104009617A CN104009617A CN201410209593.2A CN201410209593A CN104009617A CN 104009617 A CN104009617 A CN 104009617A CN 201410209593 A CN201410209593 A CN 201410209593A CN 104009617 A CN104009617 A CN 104009617A
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- channel mos
- diode
- field effect
- mos tube
- simple low
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Abstract
The invention discloses a simple low-voltage grid driving circuit which comprises a signal input end, a signal output end, a power end, a grounding end, two diodes, two resistors, a power field effect tube and a channel MOS tube. The signal input end is connected with the positive pole of one diode, the negative pole of the diode is connected with the power field effect tube, and one end of the power field effect tube is connected to the power end. The signal input end is connected with the negative pole of the other diode, the positive pole of the diode is connected with the channel MOS tube, and one end of the channel MOS tube is connected with the grounding end. The power field effect tube is connected with the channel MOS tube to serve as the signal output end, wherein the two ends of each diode are connected with one resistor in parallel. The simple low-voltage grid driving circuit has the advantages that the circuit is simple in structure, low in chip cost and capable of being developed, popularized and used on a large scale easily.
Description
Technical field
The present invention relates to a kind of circuit, particularly a kind of Simple Low Voltage gate driver circuit.
Background technology
Along with the integrated development of electronics, the application of integrated little chip is also more and more applicable to electronic technology every field, and the circuit design of low cost simple can greatly reduce the development cost of electronic device.The highest gate source voltage of general power field effect pipe is 20V left and right, so will guarantee that gate source voltage can not surpass 20V, has increased the complexity of circuit in 24V application.But at 12V or more in the application of low-voltage, circuit just can be simplified greatly.
Summary of the invention
The technical problem to be solved in the present invention is: the low pressure that a kind of circuit is simple, development cost is low, be convenient to promote the use of gate driver circuit is provided.
The technical solution adopted for the present invention to solve the technical problems is: a kind of Simple Low Voltage gate driver circuit, comprise: signal input part, signal output part, power end, earth terminal, two diodes, two resistance, a power field effect pipe, a channel MOS tube, described signal input part connects a diode cathode, diode cathode connects power field effect pipe, and power field effect pipe one end is connected to power end; Signal input part connects another diode cathode, and diode cathode connects channel MOS tube, and channel MOS tube one end connects earth terminal; Power field effect pipe is connected with channel MOS tube and as signal output part, wherein a resistance in parallel is distinguished at each diode two ends.
As preferred version, described power field effect pipe is IRF9540.
As preferred version, described channel MOS tube is IRF540N channel MOS tube.
As preferred version, described diode is IN4148 HF switch diode.
As preferred version, signal input part front end connects a Schmidt trigger.Described Schmidt trigger is 555 Schmidt triggers.
The invention has the beneficial effects as follows: by R3, R4 makes field effect transistor delay conducting to gate capacitance charges; And directly field effect transistor is ended immediately grid capacitance electric discharge by diode, thereby avoided common conduct.This circuit structure is simple, chip cost is low, be easy to large-scale development promotes the use of.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Now by reference to the accompanying drawings and specific embodiment, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, basic structure of the present invention is only described in a schematic way, so it only show the formation relevant with the present invention.These embodiment are interpreted as only for the present invention is described, need not limiting the scope of the invention.After having read content of the present invention, those skilled in the art can do various modifications to the present invention, and the variation of these equivalences and modification fall into the protection range that the present invention limits equally.
Specific embodiment as shown in Figure 1, comprise: signal input part IN, signal output part OUT, power end POWER, earth terminal, two diode D1, D2, two resistance R 3, R4, a power field effect pipe Q2, a channel MOS tube Q1, described signal input part connects a diode cathode, diode cathode connects power field effect pipe, and power field effect pipe one end is connected to power end; Signal input part connects another diode cathode, and diode cathode connects channel MOS tube, and channel MOS tube one end connects earth terminal; Power field effect pipe is connected with channel MOS tube and as signal output part, wherein a resistance in parallel is distinguished at each diode two ends.Due to the existence of fet gate electric capacity, by R3, R4 makes field effect transistor delay conducting to gate capacitance charges; And directly field effect transistor is ended immediately grid capacitance electric discharge by diode, thereby avoided common conduct.This circuit requirement is the square-wave pulse that edge is precipitous signal input part IN input, therefore control signal, from the equipment access of single-chip microcomputer or other open circuit outputs, be passed through the high-speed comparator of Schmidt trigger (such as 555) or output and just can receive signal input part IN.If input edge is excessively slow, diode delay circuit has also just lost effect.R3, choosing of R4 is relevant with IN signal edge rising or falling speed, and signal edge is more precipitous, R3, R4 is eligible less, and it is faster that switching speed also just can be done.
More than show and only described principal character of the present invention and inventive point.Those skilled in the art should understand, and the present invention is not restricted to the described embodiments.Do not departing under the prerequisite of point of the present invention and protection range, the present invention also has various variations, and these changes and improvements all will fall in the scope of protection of present invention.The scope of protection of present invention is limited by appending claims and equivalent thereof.
Claims (6)
1. a Simple Low Voltage gate driver circuit, it is characterized in that: comprising: signal input part, signal output part, power end, earth terminal, two diodes, two resistance, a power field effect pipe, a channel MOS tube, described signal input part connects a diode cathode, diode cathode connects power field effect pipe, and power field effect pipe one end is connected to power end; Signal input part connects another diode cathode, and diode cathode connects channel MOS tube, and channel MOS tube one end connects earth terminal; Power field effect pipe is connected with channel MOS tube and as signal output part, wherein a resistance in parallel is distinguished at each diode two ends.
2. Simple Low Voltage gate driver circuit according to claim 1, is characterized in that: described power field effect pipe is IRF9540.
3. Simple Low Voltage gate driver circuit according to claim 1, is characterized in that: described channel MOS tube is IRF540N channel MOS tube.
4. Simple Low Voltage gate driver circuit according to claim 1, is characterized in that: described diode is IN4148 HF switch diode.
5. according to the Simple Low Voltage gate driver circuit described in any one in claim 1 to 4, it is characterized in that: signal input part front end connects a Schmidt trigger.
6. Simple Low Voltage gate driver circuit according to claim 5, is characterized in that: described Schmidt trigger is 555 Schmidt triggers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410209593.2A CN104009617A (en) | 2014-05-17 | 2014-05-17 | Simple low-voltage grid driving circuit |
Applications Claiming Priority (1)
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CN201410209593.2A CN104009617A (en) | 2014-05-17 | 2014-05-17 | Simple low-voltage grid driving circuit |
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CN104009617A true CN104009617A (en) | 2014-08-27 |
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CN201410209593.2A Pending CN104009617A (en) | 2014-05-17 | 2014-05-17 | Simple low-voltage grid driving circuit |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105776606A (en) * | 2016-03-05 | 2016-07-20 | 马骏 | Multiple water filtering system adopting constant-pressure control technology |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010048380A (en) * | 1999-11-26 | 2001-06-15 | 윤문수 | Passive auxiliary circuit for series connection of IGBTs |
CN101632214A (en) * | 2007-02-06 | 2010-01-20 | 株式会社东芝 | Semiconductor switch and power converter to which the semiconductor switch is applied |
CN101789680A (en) * | 2010-03-12 | 2010-07-28 | 西安科技大学 | Drive circuit capable of quickly switching off depletion type switching element |
CN201975986U (en) * | 2011-01-17 | 2011-09-14 | 佛山市顺德区瑞德电子实业有限公司 | Full-bridge drive circuit of square wave inverter |
CN203851011U (en) * | 2014-05-17 | 2014-09-24 | 苏州蓝萃电子科技有限公司 | Simple low-voltage gate driving circuit |
-
2014
- 2014-05-17 CN CN201410209593.2A patent/CN104009617A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010048380A (en) * | 1999-11-26 | 2001-06-15 | 윤문수 | Passive auxiliary circuit for series connection of IGBTs |
CN101632214A (en) * | 2007-02-06 | 2010-01-20 | 株式会社东芝 | Semiconductor switch and power converter to which the semiconductor switch is applied |
CN101789680A (en) * | 2010-03-12 | 2010-07-28 | 西安科技大学 | Drive circuit capable of quickly switching off depletion type switching element |
CN201975986U (en) * | 2011-01-17 | 2011-09-14 | 佛山市顺德区瑞德电子实业有限公司 | Full-bridge drive circuit of square wave inverter |
CN203851011U (en) * | 2014-05-17 | 2014-09-24 | 苏州蓝萃电子科技有限公司 | Simple low-voltage gate driving circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105776606A (en) * | 2016-03-05 | 2016-07-20 | 马骏 | Multiple water filtering system adopting constant-pressure control technology |
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Application publication date: 20140827 |