CN204290916U - A kind of switching circuit - Google Patents
A kind of switching circuit Download PDFInfo
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- CN204290916U CN204290916U CN201420738272.7U CN201420738272U CN204290916U CN 204290916 U CN204290916 U CN 204290916U CN 201420738272 U CN201420738272 U CN 201420738272U CN 204290916 U CN204290916 U CN 204290916U
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- effect transistor
- switching circuit
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Abstract
The utility model discloses a kind of switching circuit, comprise triode Q1, field effect transistor Q2, the first resistance R1, the second resistance R2, the 3rd resistance R3, control end, the first voltage end and the second voltage end; The base stage of described triode Q1 is connected to described first voltage end by described first resistance R1; The emitter of described triode Q1 is connected to described control end; The collector electrode of described triode Q1 is connected to described second voltage end by described second resistance R2; The grid of described field effect transistor Q2 is connected with the collector electrode of described triode Q1 by described 3rd resistance R3; The source electrode of described field effect transistor Q2 is connected to described second voltage end.The utility model circuit design is simple, and element is less, reduces product cost, and the area occupied of PCB is less, is convenient to the typesetting wiring of PCB.
Description
Technical field
The utility model relates to electronic technology field, particularly relates to a kind of switching circuit.
Background technology
Existing switching circuit adopts field effect transistor as the switch element of circuit mostly, and general by adopting the work of two-stage triode controlling filed effect pipe, as shown in Figure 1, its general principle is as follows:
When control end POW_EN state is low level, triode Q11 ends, and the base stage of triode Q12 is high level, and triode Q12 is in conducting, and the current collection very low level of triode Q12, namely the grid of field effect transistor Q13 is low level, field effect transistor Q13 conducting.
When POW_EN control mouth is high level, triode Q11 conducting, the base stage of triode Q12 is low level, and triode Q12 ends, and voltage 5V_STB gets back to the grid of field effect transistor Q13 by resistance R14, resistance R15, and field effect transistor Q13 ends.
But by adopting the circuit of two-stage triode controlling filed effect pipe work comparatively complicated, element is more, and cost comparatively increases, and the area of PCB (Printed Circuit Board, printed circuit board) increases, and is unfavorable for the typesetting wiring of PCB.
Summary of the invention
Technical problem to be solved in the utility model is, provides a kind of switching circuit, by the work of one-level triode controlling filed effect pipe, simplifies circuit, reduces costs, reduce the area of PCB, is convenient to the typesetting wiring of PCB.
The utility model embodiment provides a kind of switching circuit, and described switching circuit comprises triode Q1, field effect transistor Q2, the first resistance R1, the second resistance R2 and the 3rd resistance R3;
The base stage of described triode Q1 is connected to the first voltage end by described first resistance R1;
The emitter of described triode Q1 is connected to control end;
The collector electrode of described triode Q1 is connected to the second voltage end by described second resistance R2;
The grid of described field effect transistor Q2 is connected with the collector electrode of described triode Q1 by described 3rd resistance R3;
The source electrode of described field effect transistor Q2 is connected to described second voltage end.
Preferably, described triode Q1 is NPN type triode.
Preferably, described field effect transistor Q2 is P-channel field-effect transistor (PEFT) pipe.
Preferably, described switching circuit also comprises the 4th resistance R4;
The emitter of described triode Q1 is connected to described control end and is specially:
The emitter of described triode Q1 is connected to described control end by described 4th resistance R4.
Preferably, described switching circuit also comprises the first electric capacity C1;
The first end of described first electric capacity C1 is connected with the source electrode of described field effect transistor Q2, and second end of described first electric capacity C1 is connected with the grid of described field effect transistor Q2.
Preferably, described switching circuit also comprises the second electric capacity C2;
The first end of described second electric capacity C2 is connected with the drain electrode of described field effect transistor Q2, the second end ground connection of described second electric capacity C2.
Preferably, described first resistance R1 is the resistance of 10K Ω;
Second resistance R2 is the resistance of 4.7K Ω;
3rd resistance R3 is the resistance of 100 K Ω;
4th resistance R4 is the resistance of 100 Ω;
Described first electric capacity C1 is the electric capacity of 0.1uF;
Described second electric capacity C2 is the electric capacity of 0.1uF.
The utility model provides a kind of switching circuit, and by the work of one-level triode controlling filed effect pipe, circuit design is simple, and element is less, reduces product cost, and the area occupied of PCB is less, and the typesetting wiring of PCB easily.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of a kind of conventional switching circuit that prior art provides;
Fig. 2 is the circuit diagram of an embodiment of the switching circuit that the utility model provides.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described.
See Fig. 2, it is the circuit diagram of an embodiment of the switching circuit that the utility model provides.
As shown in Figure 2, described switching circuit comprises triode Q1, field effect transistor Q2, the first resistance R1, the second resistance R2 and the 3rd resistance R3.
The base stage of described triode Q1 is connected to the first voltage end VCC by described first resistance R1.
The emitter of described triode Q1 is connected to control end POW_EN.
The collector electrode of described triode Q1 is connected to the second voltage end VSS by described second resistance R2.
The grid of described field effect transistor Q2 is connected with the collector electrode of described triode Q1 by described 3rd resistance R3.
The source electrode of described field effect transistor Q2 is connected to described second voltage end VSS.
Wherein, described triode Q1 is preferably NPN type triode.
Described field effect transistor Q2 is metal-oxide semiconductor (MOS) (MOS) transistor.
Described field effect transistor Q2 is preferably P-channel field-effect transistor (PEFT) pipe.
Further, described switching circuit also comprises the 4th resistance R4.
The emitter of described triode Q1 is connected to described control end POW_EN and is specially:
The emitter of described triode Q1 is connected to described control end POW_EN by described 4th resistance R4.
Further, described switching circuit also comprises the first electric capacity C1.
The first end of described first electric capacity C1 is connected with the source electrode of described field effect transistor Q2, and second end of described first electric capacity C1 is connected with the grid of described field effect transistor Q2.
Described switching circuit preferably also comprises the second electric capacity C2.
The first end of described second electric capacity C2 is connected with the drain electrode of described field effect transistor Q2, the second end ground connection of described second electric capacity C2.
In the middle of one is preferably implemented, described first resistance R1 is the resistance of 10K Ω.
Second resistance R2 is the resistance of 4.7K Ω.
3rd resistance R3 is the resistance of 100 K Ω.
4th resistance R4 is the resistance of 100 Ω.
Described first electric capacity C1 is the electric capacity of 0.1uF.
Described second electric capacity C2 is the electric capacity of 0.1uF.
When control end POW_EN is low level, the transmitting very low level of triode Q1, and the base stage of triode Q1 is pulled upward to the first voltage VCC by described first resistance R1, triode Q1 is in saturation condition, the current collection very low level of triode Q1, and the grid of field effect transistor Q2 is connected to the collector electrode of described triode Q1 by the 3rd resistance R3, so the grid of field effect transistor Q2 is also low level, field effect transistor conducting.
When control end POW_EN is high level (being generally 3.3V), the emitter of triode Q1 is also high level, the base stage of triode Q1 is pulled upward to the first voltage VCC (described first voltage VCC can be arranged according to the output voltage of control end POW_EN) by described first resistance R1, now, the emitter of triode Q1 and base voltage difference are 0V, triode Q1 is in cut-off state, the grid of field effect transistor Q2 is connected to the second voltage end VSS by the 3rd resistance R3, the second resistance R2, for high level, field effect transistor is ended.
In sum, the utility model provides a kind of switching circuit, and by the work of one-level triode controlling filed effect pipe, circuit design is simple, and element is less, reduces product cost, and the area occupied of PCB is less, and the typesetting wiring of PCB easily.
The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection range of the present utility model.
Claims (7)
1. a switching circuit, is characterized in that, described switching circuit comprises triode Q1, field effect transistor Q2, the first resistance R1, the second resistance R2 and the 3rd resistance R3;
The base stage of described triode Q1 is connected to the first voltage end by described first resistance R1;
The emitter of described triode Q1 is connected to control end;
The collector electrode of described triode Q1 is connected to the second voltage end by described second resistance R2;
The grid of described field effect transistor Q2 is connected with the collector electrode of described triode Q1 by described 3rd resistance R3;
The source electrode of described field effect transistor Q2 is connected to described second voltage end.
2. switching circuit as claimed in claim 1, it is characterized in that, described triode Q1 is NPN type triode.
3. switching circuit as claimed in claim 2, it is characterized in that, described field effect transistor Q2 is P-channel field-effect transistor (PEFT) pipe.
4. switching circuit as claimed in claim 3, it is characterized in that, described switching circuit also comprises the 4th resistance R4;
The emitter of described triode Q1 is connected to described control end and is specially:
The emitter of described triode Q1 is connected to described control end by described 4th resistance R4.
5. switching circuit as claimed in claim 4, it is characterized in that, described switching circuit also comprises the first electric capacity C1;
The first end of described first electric capacity C1 is connected with the source electrode of described field effect transistor Q2, and second end of described first electric capacity C1 is connected with the grid of described field effect transistor Q2.
6. switching circuit as claimed in claim 5, it is characterized in that, described switching circuit also comprises the second electric capacity C2;
The first end of described second electric capacity C2 is connected with the drain electrode of described field effect transistor Q2, the second end ground connection of described second electric capacity C2.
7. switching circuit as claimed in claim 6, is characterized in that,
Described first resistance R1 is the resistance of 10K Ω;
Second resistance R2 is the resistance of 4.7K Ω;
3rd resistance R3 is the resistance of 100K Ω;
4th resistance R4 is the resistance of 100 Ω;
Described first electric capacity C1 is the electric capacity of 0.1uF;
Described second electric capacity C2 is the electric capacity of 0.1uF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420738272.7U CN204290916U (en) | 2014-11-28 | 2014-11-28 | A kind of switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420738272.7U CN204290916U (en) | 2014-11-28 | 2014-11-28 | A kind of switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204290916U true CN204290916U (en) | 2015-04-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420738272.7U Active CN204290916U (en) | 2014-11-28 | 2014-11-28 | A kind of switching circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204290916U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104811026A (en) * | 2015-05-27 | 2015-07-29 | 成都德麦科技有限公司 | Switch power supply |
| CN106655724A (en) * | 2016-11-03 | 2017-05-10 | 广州视源电子科技股份有限公司 | Power switch circuit |
| CN107172736A (en) * | 2017-05-04 | 2017-09-15 | 安徽庆恒信息科技有限公司 | Intelligent microwave oven with switch control |
| CN113067563A (en) * | 2021-03-15 | 2021-07-02 | 重庆智行者信息科技有限公司 | PWM signal output and diagnostic circuit |
-
2014
- 2014-11-28 CN CN201420738272.7U patent/CN204290916U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104811026A (en) * | 2015-05-27 | 2015-07-29 | 成都德麦科技有限公司 | Switch power supply |
| CN106655724A (en) * | 2016-11-03 | 2017-05-10 | 广州视源电子科技股份有限公司 | Power switch circuit |
| CN106655724B (en) * | 2016-11-03 | 2018-12-07 | 广州视源电子科技股份有限公司 | A kind of power switch circuit |
| CN107172736A (en) * | 2017-05-04 | 2017-09-15 | 安徽庆恒信息科技有限公司 | Intelligent microwave oven with switch control |
| CN113067563A (en) * | 2021-03-15 | 2021-07-02 | 重庆智行者信息科技有限公司 | PWM signal output and diagnostic circuit |
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