CN208836102U - A kind of MOSFET driving circuit based on pulse transformer isolation - Google Patents
A kind of MOSFET driving circuit based on pulse transformer isolation Download PDFInfo
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- CN208836102U CN208836102U CN201821646371.7U CN201821646371U CN208836102U CN 208836102 U CN208836102 U CN 208836102U CN 201821646371 U CN201821646371 U CN 201821646371U CN 208836102 U CN208836102 U CN 208836102U
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Abstract
The utility model relates to a kind of MOSFET driving circuits based on pulse transformer isolation, pwm signal successively adjusts circuit with driving signal, push-pull amplifier circuit, capacitance and pulse transformer connection, the vice-side winding of pulse transformer is connected by displacement-capacitance with pressure stabilizing clamp circuit, the 6th resistance is connected by displacement-capacitance with pulse transformer with the cathode of Schottky diode parallel connection and Schottky diode in pressure stabilizing clamp circuit, Schottky diode anode is connected with the cathode of the first zener diode, first zener diode anode is connected with the anode of the second zener diode, the cathode of second zener diode is connected with the low-pressure end of pulse transformer vice-side winding, 7th resistor coupled in parallel is between the cathode of the first zener diode and the cathode of the second zener diode, the cathode of first zener diode and switching tube Grid is connected, and the cathode of the second zener diode is connected with the source electrode of switching tube.The drive circuit works are reliable, and output voltage range is wide, and long service life.
Description
Technical field
The utility model relates to a kind of switch tube driving circuit, in particular to it is a kind of based on pulse transformer isolation
MOSFET driving circuit belongs to Electric Power Automation Equipment technical field.
Background technique
With the development of power electronic technique and microprocessor, each row that Electric Power Automation Equipment is widely used in society is each
In industry, especially full-control type power switching device, application is very extensive, in order to be better achieved automatically control in it is fast, quasi-,
Steady basic demand, core technology of the design and pulse modulation technology of switch tube driving circuit as these systems, causes
The great attention of people and continuous further investigation.But as power switch tube develops towards high frequency, high current direction, needle
The design requirement of switch tube driving circuit is also higher and higher.The information of foundation engineering actual feedback, most switching tubes
The source of damage is due to caused by driving circuit failure and isolated failure.
Since the pulse-width signal electric current of microprocessor output is smaller, do not have the ability of driving power switching tube, because
Driving circuit, which will be additionally added, in this could open the grid voltage of MOSFET, while switching loss when reducing high frequency.With regard to driving
For circuit, voltage, the current class of loop of power circuit and signal circuit are inevitable different, therefore in design driven using isolation
Mode.Isolation generally has photoelectricity and transformer two ways.The method of Phototube Coupling, which refers to, uses opto-coupler chip between driving signal
Keep apart, chip interior needs optical signal becoming electric signal, exist delay so that the switching speed of driving circuit relatively
Slowly, and chip cost is higher.
Pulse transformer is one kind more special in transformer, and what it was converted is the unipolar pulse close to rectangle,
Pulse transformer is widely used in Industry Control, in Semiconductor Converting Technology, at present according to pulse transformer the characteristics of, driving circuit point can be with
It is divided into self-supporting power driving, active and passive drive method, passive drive is direct using the secondary side output signal of transformer
It drives, additional power supply is not needed in circuit, but the disadvantage is that the gate-source emitter voltage of output can have biggish distortion.Have
The method of source driving refers to that the transformer in driving circuit only has isolation features, and rear end is driven using additional signal amplification circuit
Dynamic switching tube, increases cost.Self-supporting power driving is that driving signal is modulated for the first time in transformer primary side high frequency, and secondary side is adjusted again
System carrys out driving switch pipe, and this mode drives complexity, and higher cost exists simultaneously delay.
Under background above basis, reliable design, output area are wide, it is very aobvious to be had using the driving circuit of simple and flexible
The meaning of work.
Utility model content
The purpose of this utility model is that overcoming problems of the prior art, provide a kind of based on pulse transformer
The MOSFET driving circuit of isolation, reliable operation, output voltage range is wide, and long service life.
In order to solve the above technical problems, a kind of MOSFET based on pulse transformer isolation of the utility model drives electricity
Road, including driving signal adjust circuit 11, push-pull amplifier circuit 12, pulse transformer 13 and pressure stabilizing clamp circuit 14, micro process
Device output pulse width modulated signal PWM accesses the input terminal that driving signal adjusts circuit 11, and driving signal adjusts the output of circuit 11
The input terminal into push-pull amplifier circuit 12 is terminated, the output end of push-pull amplifier circuit 12 passes through capacitance C5 and pulse transformer
13 primary side winding is connected, and the vice-side winding of pulse transformer 13 is connected by displacement-capacitance C6 with pressure stabilizing clamp circuit 14,
Pressure stabilizing clamp circuit 14 includes the 6th resistance R6, Schottky diode D3, the first zener diode D1, the second zener diode D2
With the 7th resistance R7, the 6th resistance R6 is in parallel with Schottky diode D3, and the cathode of Schottky diode D3 passes through displacement electricity
Hold C6 to be connected with the high-voltage end of 13 vice-side winding of pulse transformer, the anode of Schottky diode D3 and the first zener diode D1
Cathode be connected, the anode of the first zener diode D1 is connected with the anode of the second zener diode D2, the second zener diode
The cathode of D2 is connected with the low-pressure end of 13 vice-side winding of pulse transformer, and the 7th resistance R7 is connected in parallel on the first zener diode D1's
Between cathode and the cathode of the second zener diode D2, the cathode of the first zener diode D1 and the grid of power MOSFET switch tube
Pole GOUT is connected, and the cathode of the second zener diode D2 is connected with the source S OUT of power MOSFET switch tube.
Compared with the existing technology, the utility model achieves following the utility model has the advantages that microprocessor output pulse width modulated signal
PWM amplifies after driving signal adjusts the adjusting amplification of circuit 11, then through 12 alternate conduction of push-pull amplifier circuit, obtains bigger
Output power；Using 13 isolation drive of pulse transformer, have the characteristics that delay is lower, and can under very high pressure difference work
Make, the power that can be transmitted is relatively large, and application is more flexible, can be by driving signal split-phase, resonance, impedance etc.；It examines
Consider the problem of pulse transformer 13 removes magnetic reset, driving circuit electric current is single-phase pulsation, and the cumulative of magnetic flux may cause appearance
Saturation, so that electric current increases when switching tube is connected, voltage increases when shutdown, and the utility model is added capacitance C5 and filters out signal
Middle DC component carries out magnetic reset using capacitance C5, and remanent magnetism is fed back to the another side of pulse transformer 13.Energy from
The primary side of pulse transformer 13 is transmitted to secondary side, to make switching tube grid voltage be greater than operating voltage rapidly, utilizes the first pressure stabilizing
Diode D1, the second zener diode D2 carry out voltage clamping.When pwm signal is high level, switching tube is connected at this time, electric current stream
The charging of the junction capacity on emitter and grid is connected in parallel on on switching tube through the 6th resistance R6.When pwm signal is low level, at this time
Switching tube shutdown, capacitance C5 discharge over the ground, and displacement-capacitance C6 is discharged by the 6th resistance R6, the 7th resistance R7, so that grid
Extremely upper voltage is lower than rapidly cut-in voltage, on-off switching tube.The 6th resistance R6 and Schottky two are added in pressure stabilizing clamp circuit 14
Pole pipe D3 can reduce reverse recovery time, improve the waveform of driving signal；The 7th electricity to protect is added between grid source electrode
R7 is hindered, electric current excessive damage component when preventing from switching tube short circuit plays good protective effect.Utility model device accounts for
Sky is wider than adjustable extent, and fast response time, more reliably, output voltage are adjustable, can meet desired indicator, and circuit also has
Insulation blocking function.
As a preferred embodiment of the present invention, driving signal adjust circuit 11 include first resistor R1, second resistance R2,
3rd resistor R3, the 4th resistance R4, first capacitor C1, the second capacitor C2, the first triode Q1 and the second triode Q2, the one or three
Pole pipe Q1 and the second triode Q2 is NPN type triode, and the one or three pole is accessed after first resistor R1 is in parallel with first capacitor C1
The base stage of pipe Q1 is connected on the collector and the second triode of the first triode Q1 after 3rd resistor R3 is in parallel with the second capacitor C2
Between the base stage of Q2, the emitter of the first triode Q1 is electrically connected and is grounded with the emitter of the second triode Q2；One or three pole
The collector of pipe Q1 is electrically connected by second resistance R2 with DC isolation power supply 15, and the collector of the second triode Q2 passes through the 4th
Resistance R4 is electrically connected with DC isolation power supply 15.Microprocessor output pulse width modulated signal be prevent vibrate and interfere, need by
First resistor R1 and first capacitor C1,3rd resistor R3 and the second capacitor C2 parallel connection transmission, rear end base voltage can use the first three
Pole pipe Q1 and the second triode Q2 is adjusted, and the mode that two-stage is adjusted can make PWM output signal and microprocessor output driving
The same phase of signal.
As the further preferred scheme of the utility model, push-pull amplifier circuit 12 includes third transistor Q3, the four or three
Pole pipe Q4, third capacitor C3, the 4th capacitor C4 and the 5th resistance R5, third transistor Q3 are NPN type triode, the 4th triode
Q4 is PNP type triode, the emitter of third transistor Q3 and the 4th triode Q4 be connected with each other and by capacitance C5 with
The high-voltage end of 13 primary side winding of pulse transformer is connected, the base stage of third transistor Q3 and the 4th triode Q4 be connected with each other and
It is connected with the collector of the second triode Q2, the collector of third transistor Q3 is electrically connected with DC isolation power supply 15, and the four or three
The collector of pole pipe Q4 is connected with the emitter of the second triode Q2 and by the 5th resistance R5 and 13 primary side of pulse transformer
The low-pressure end of winding is connected；One end is electrically connected with DC isolation power supply 15 after third capacitor C3 is in parallel with the 4th capacitor C4, separately
One end ground connection.Signal alternate conduction, shutdown third transistor Q3 and the 4th triode Q4 in push-pull amplifier circuit 12, when the three or three
Pole pipe Q3 is in the conductive state and magnifying state, the 4th triode Q4 are in off state；After signal switching levels, it is in front of
4th triode Q4 of off state become conducting, magnifying state, and be connected originally, the third transistor Q3 of magnifying state becomes
Off state improves circuit efficiency, reduces circuit distortion.
Detailed description of the invention
Utility model will be further described in detail below with reference to the attached drawings and specific embodiments, and attached drawing only provides ginseng
It examines and illustrates to use, it is non-to limit the utility model.
Fig. 1 is the structural block diagram for the MOSFET driving circuit that the utility model is isolated based on pulse transformer.
Fig. 2 is the electrical schematic diagram for the MOSFET driving circuit that the utility model is isolated based on pulse transformer.
Fig. 3 is the simulation waveform that the utility model drives output under different duty.
Fig. 4 is the experimental waveform figure that the utility model drives output under different duty.
Specific embodiment
As shown in Figures 1 and 2, the MOSFET driving circuit that the utility model is isolated based on pulse transformer, including driving
Circuit for signal conditioning 11, push-pull amplifier circuit 12, pulse transformer 13 and pressure stabilizing clamp circuit 14, microprocessor output pulse width tune
Signal PWM access driving signal processed adjusts the input terminal of circuit 11, and the output end access that driving signal adjusts circuit 11, which is recommended, puts
The input terminal of big circuit 12, the output end of push-pull amplifier circuit 12 pass through the primary side winding of capacitance C5 and pulse transformer 13
It is connected, the vice-side winding of pulse transformer 13 is connected by displacement-capacitance C6 with pressure stabilizing clamp circuit 14, pressure stabilizing clamp circuit
14 include the 6th resistance R6, Schottky diode D3, the first zener diode D1, the second zener diode D2 and the 7th resistance
R7, the 6th resistance R6 is in parallel with Schottky diode D3, and the cathode of Schottky diode D3 passes through displacement-capacitance C6 and pulse
The high-voltage end of 13 vice-side winding of transformer is connected, the cathode phase of the anode of Schottky diode D3 and the first zener diode D1
Even, the anode of the first zener diode D1 is connected with the anode of the second zener diode D2, the cathode of the second zener diode D2
It is connected with the low-pressure end of 13 vice-side winding of pulse transformer, the 7th resistance R7 is connected in parallel on the cathode and of the first zener diode D1
Between the cathode of two zener diode D2, the grid G OUT phase of the cathode and power MOSFET switch tube of the first zener diode D1
Even, the cathode of the second zener diode D2 is connected with the source S OUT of power MOSFET switch tube.
It includes first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, that driving signal, which adjusts circuit 11,
One capacitor C1, the second capacitor C2, the first triode Q1 and the second triode Q2, the first triode Q1 and the second triode Q2 are
NPN type triode accesses the base stage of the first triode Q1,3rd resistor R3 and after first resistor R1 is in parallel with first capacitor C1
It is connected between the collector of the first triode Q1 and the base stage of the second triode Q2 after two capacitor C2 are in parallel, the first triode Q1
Emitter be electrically connected and be grounded with the emitter of the second triode Q2；The collector of first triode Q1 passes through second resistance R2
It is electrically connected with DC isolation power supply 15, the collector of the second triode Q2 is electrically connected by the 4th resistance R4 with DC isolation power supply 15
It connects.
Push-pull amplifier circuit 12 includes third transistor Q3, the 4th triode Q4, third capacitor C3, the 4th capacitor C4 and the
Five resistance R5, third transistor Q3 are NPN type triode, and the 4th triode Q4 is PNP type triode, third transistor Q3 and the
The emitter of four triode Q4 is connected with each other and is connected by capacitance C5 with the high-voltage end of 13 primary side winding of pulse transformer
It connects, third transistor Q3 is connected with each other with the base stage of the 4th triode Q4 and is connected with the collector of the second triode Q2, third
The collector of triode Q3 is electrically connected with DC isolation power supply 15, the hair of the collector of the 4th triode Q4 and the second triode Q2
Emitter-base bandgap grading is connected and is connected by the 5th resistance R5 with the low-pressure end of 13 primary side winding of pulse transformer；Third capacitor C3 and
One end is electrically connected with DC isolation power supply 15 after four capacitor C4 are in parallel, other end ground connection.
Microprocessor output pulse width modulated signal is to prevent from vibrating and interfere, and need to pass through first resistor R1 and first capacitor
C1,3rd resistor R3 and the second capacitor C2 parallel connection transmission, rear end base voltage can use the first triode Q1 and the second triode Q2
It adjusts, the mode that two-stage is adjusted can make PWM output signal and the same phase of microprocessor output drive signal.
Signal alternate conduction, shutdown third transistor Q3 and the 4th triode Q4 in push-pull amplifier circuit 12, when the three or three
Pole pipe Q3 is in the conductive state and magnifying state, the 4th triode Q4 are in off state；After signal switching levels, it is in front of
4th triode Q4 of off state become conducting, magnifying state, and be connected originally, the third transistor Q3 of magnifying state becomes
Off state improves circuit efficiency, obtains bigger output power, reduces circuit distortion.
Using 13 isolation drive of pulse transformer, and consider the problems of that pulse transformer 13 removes magnetic reset, driving circuit
Electric current is single-phase pulsation, and cumulative may cause of magnetic flux is saturated, so that electric current increases when switching tube is connected, electricity when shutdown
Pressure increases, and the utility model is added capacitance C5 and filters out DC component in signal, carries out magnetic reset using capacitance C5, and
Remanent magnetism is fed back to the another side of pulse transformer 13.Energy is transmitted to secondary side from the primary side of pulse transformer 13, to make to switch
Tube grid voltage is greater than rapidly operating voltage, carries out voltage clamping using the first zener diode D1, the second zener diode D2.
When pwm signal is high level, switching tube is connected at this time, and electric current flows through the 6th resistance R6 and is connected in parallel on hair on switching tube
Junction capacity charging on emitter-base bandgap grading and grid.
When pwm signal is low level, switching tube is turned off at this time, and capacitance C5 discharges over the ground, and displacement-capacitance C6 passes through the
Six resistance R6, the 7th resistance R7 electric discharge, so that voltage is lower than rapidly cut-in voltage, on-off switching tube on grid.
The 6th resistance R6 and Schottky diode D3 is added in pressure stabilizing clamp circuit 14 can reduce reverse recovery time, improve
The waveform of driving signal；A the 7th resistance R7 to protect is added between grid source electrode, electric current is excessive when preventing from switching tube short circuit
Component is damaged, good protective effect is played.
Fig. 3 is the simulation waveform for the MOSFET driving circuit that the utility model is isolated based on pulse transformer, is used
PSIM software carries out simulating, verifying, transformer turn ratio 1:3, and primary side inductance value is 50uH, and secondary inductance value is 150uH, examines
Considering actual switch pipe application switching frequency is respectively set is 25,50,100kHz.Fig. 3 (a), (b), (c) are respectively to switch
Frequency is 25,50, drive the simulation waveform of output in the case of 100kHz, abscissa is the time, and ordinate is voltage, and every width figure
In be from left to right respectively microprocessor duty ratio 0.1,0.5 and 0.9 under corresponding switching frequency output waveform.And Fig. 3
(a), (b), upper end waveform is the waveform of the utility model driving circuit output, the first zener diode D1, the second pressure stabilizing in (c)
Diode D2 selects 15 volts and 3.3 volts respectively, and lower end waveform is the signal waveform of microprocessor non-inverting output, signal
It is 0 and 3.3 volt that waveform, which exports low and high level, and driving circuit has good under different duty ratio operating conditions as seen from Figure 3
Good effect, simulation result are preferable.
The experimental waveform figure for the MOSFET driving circuit that Fig. 4 is isolated for the utility model based on pulse transformer, Fig. 4 (a),
(b), it is the experimental waveform for driving output under 50kHz under different duty (0.1,0.5,0.9) that (c), which respectively indicates switching frequency,
As can be seen that Fig. 4 (a), (b), abscissa is the time in (c), 10us/ lattice, ordinate is voltage, 5V/ lattice, and has two waves
Shape curve, upper end are the waveform of the utility model driving circuit output, and signal waveform output voltage is positive 15 and 3.3 volts minus,
Lower end is the signal waveform of microprocessor non-inverting output, and driving output low and high level is 0 and 3.3 volt.It can be divided by Fig. 4
Driving circuit, which is precipitated, has good effect under different duty ratio operating conditions, and isolation circuit works normally switching tube, but
In the presence of decaying by a small margin, this is the disadvantage of passive drive certainty.As can be seen from Figure 4 the pulsewidth modulation letter that microprocessor generates
Number almost consistent with driving output phase, it is higher to meet switching frequency under normal circumstances, and output delay is smaller, and response speed is faster
The characteristics of, it may make in this way in pulse duty factor very little or when close to zero, negative voltage can be rapidly exported, thus anti-
Only MOSFET misleads.
The foregoing is merely the preferable possible embodiments of the utility model, patent that is non-therefore limiting to the utility model
Protection scope.In addition to the implementation, the utility model can also have other embodiments.It is all to use equivalent replacement or equivalent change
The technical solution to be formed is changed, is all fallen in the protection scope of the requires of the utility model.Technology of the utility model without description is special
Sign can realize that details are not described herein by or using the prior art.
Claims (3)
1. a kind of MOSFET driving circuit based on pulse transformer isolation, including driving signal adjust circuit (11), recommend and put
Big circuit (12), pulse transformer (13) and pressure stabilizing clamp circuit (14), it is characterised in that: microprocessor output pulse width modulation letter
Number (PWM) access driving signal adjusts the input terminal of circuit (11), and the output end access that driving signal adjusts circuit (11) is recommended
The input terminal of amplifying circuit (12), the output end of push-pull amplifier circuit (12) is by capacitance (C5) and pulse transformer (13)
Primary side winding be connected, the vice-side winding of pulse transformer (13) passes through displacement-capacitance (C6) and pressure stabilizing clamp circuit (14) phase
Even, pressure stabilizing clamp circuit (14) includes the 6th resistance (R6), Schottky diode (D3), the first zener diode (D1), second
Zener diode (D2) and the 7th resistance (R7), the 6th resistance (R6) is in parallel with Schottky diode (D3), and two pole of Schottky
The cathode of pipe (D3) is connected by displacement-capacitance (C6) with the high-voltage end of pulse transformer (13) vice-side winding, Schottky diode
(D3) anode is connected with the cathode of the first zener diode (D1), the anode of the first zener diode (D1) and the second pressure stabilizing two
The anode of pole pipe (D2) is connected, the low-pressure end phase of the cathode and pulse transformer (13) vice-side winding of the second zener diode (D2)
Even, the 7th resistance (R7) is connected in parallel between the cathode of the first zener diode (D1) and the cathode of the second zener diode (D2),
The cathode of first zener diode (D1) is connected with the grid (GOUT) of power MOSFET switch tube, the second zener diode (D2)
Cathode be connected with the source electrode (SOUT) of power MOSFET switch tube.
2. the MOSFET driving circuit according to claim 1 based on pulse transformer isolation, it is characterised in that: driving letter
Number adjust circuit (11) include first resistor (R1), second resistance (R2), 3rd resistor (R3), the 4th resistance (R4), first electricity
Hold (C1), the second capacitor (C2), the first triode (Q1) and the second triode (Q2), the first triode (Q1) and the second triode
(Q2) it is NPN type triode, the base stage of the first triode (Q1) is accessed after first resistor (R1) is in parallel with first capacitor (C1),
The collector and the second triode (Q2) of the first triode (Q1) are connected on after 3rd resistor (R3) is in parallel with the second capacitor (C2)
Base stage between, the emitter of the first triode (Q1) is electrically connected and is grounded with the emitter of the second triode (Q2)；One or three
The collector of pole pipe (Q1) is electrically connected by second resistance (R2) with DC isolation power supply (15), the current collection of the second triode (Q2)
Pole is electrically connected by the 4th resistance (R4) with DC isolation power supply (15).
3. the MOSFET driving circuit according to claim 2 based on pulse transformer isolation, it is characterised in that: recommend and put
Big circuit (12) includes third transistor (Q3), the 4th triode (Q4), third capacitor (C3), the 4th capacitor (C4) and the 5th electricity
It hinders (R5), third transistor (Q3) is NPN type triode, and the 4th triode (Q4) is PNP type triode, third transistor (Q3)
It is connected with each other with the emitter of the 4th triode (Q4) and by capacitance (C5) and pulse transformer (13) primary side winding
High-voltage end is connected, the base stage of third transistor (Q3) and the 4th triode (Q4) be connected with each other and with the second triode (Q2)
Collector is connected, and the collector of third transistor (Q3) is electrically connected with DC isolation power supply (15), the collection of the 4th triode (Q4)
Electrode is connected with the emitter of the second triode (Q2) and by the 5th resistance (R5) and pulse transformer (13) primary side winding
Low-pressure end be connected；One end is electrically connected with DC isolation power supply (15) after third capacitor (C3) is in parallel with the 4th capacitor (C4),
Other end ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821646371.7U CN208836102U (en) | 2018-10-11 | 2018-10-11 | A kind of MOSFET driving circuit based on pulse transformer isolation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821646371.7U CN208836102U (en) | 2018-10-11 | 2018-10-11 | A kind of MOSFET driving circuit based on pulse transformer isolation |
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| CN208836102U true CN208836102U (en) | 2019-05-07 |
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| CN201821646371.7U Active CN208836102U (en) | 2018-10-11 | 2018-10-11 | A kind of MOSFET driving circuit based on pulse transformer isolation |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130344A (en) * | 2019-12-18 | 2020-05-08 | 上海空间电源研究所 | Space microsecond level pulse power supply circuit |
| CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
| CN111490773A (en) * | 2020-05-20 | 2020-08-04 | 苏州纳芯微电子股份有限公司 | Common mode transient suppression protection circuit for digital isolator |
| CN113691240A (en) * | 2021-07-16 | 2021-11-23 | 北京无线电测量研究所 | SiC MOSFET drive circuit for isolating 50kV high voltage |
| CN113938007A (en) * | 2021-10-27 | 2022-01-14 | 北京华芯微半导体有限公司 | Level conversion high-voltage high-speed high-power driving method and system structure |
| CN114283747A (en) * | 2021-07-12 | 2022-04-05 | 友达光电股份有限公司 | Drive device |
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2018
- 2018-10-11 CN CN201821646371.7U patent/CN208836102U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111130344A (en) * | 2019-12-18 | 2020-05-08 | 上海空间电源研究所 | Space microsecond level pulse power supply circuit |
| CN111293863A (en) * | 2020-03-25 | 2020-06-16 | 深圳市博敏电子有限公司 | Bidirectional switch floating ground driving circuit and multi-way switch driving circuit thereof |
| CN111490773A (en) * | 2020-05-20 | 2020-08-04 | 苏州纳芯微电子股份有限公司 | Common mode transient suppression protection circuit for digital isolator |
| CN114283747A (en) * | 2021-07-12 | 2022-04-05 | 友达光电股份有限公司 | Drive device |
| CN114283747B (en) * | 2021-07-12 | 2023-09-08 | 友达光电股份有限公司 | Driving device |
| CN113691240A (en) * | 2021-07-16 | 2021-11-23 | 北京无线电测量研究所 | SiC MOSFET drive circuit for isolating 50kV high voltage |
| CN113691240B (en) * | 2021-07-16 | 2024-02-20 | 北京无线电测量研究所 | SiC MOSFET driving circuit for isolating 50kV high voltage |
| CN113938007A (en) * | 2021-10-27 | 2022-01-14 | 北京华芯微半导体有限公司 | Level conversion high-voltage high-speed high-power driving method and system structure |
| CN113938007B (en) * | 2021-10-27 | 2022-11-04 | 西安华芯微半导体有限公司 | Level conversion high-voltage high-speed high-power driving method and system structure |
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