CN113938007B - Level conversion high-voltage high-speed high-power driving method and system structure - Google Patents
Level conversion high-voltage high-speed high-power driving method and system structure Download PDFInfo
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- CN113938007B CN113938007B CN202111256798.2A CN202111256798A CN113938007B CN 113938007 B CN113938007 B CN 113938007B CN 202111256798 A CN202111256798 A CN 202111256798A CN 113938007 B CN113938007 B CN 113938007B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Abstract
The invention provides a level conversion high-voltage high-speed high-power driving method and a system structure, and relates to the field of pulse driving circuits. A level conversion high-voltage high-speed high-power driving method comprises the following steps: the input structure is driven in a complementary input mode, the rising edge and the falling edge have current driving capability, and the instantaneous large-current driving capability is achieved through the enhancement of the front edge or the rear edge; the middle high-voltage driving structure works in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND simultaneously; the internal structure current is controlled, and the driving voltage is clamped through a reverse diode or an equivalent structure thereof, so that the input of the output power tube does not exceed the input allowable range. The method can fully utilize the characteristics of the device by simplifying the middle logic link, and is simple and reliable and used for high-voltage switch application. In addition, the invention also provides a level conversion high-voltage high-speed high-power driving system structure.
Description
Technical Field
The invention relates to the field of pulse driving circuits, in particular to a level conversion high-voltage high-speed high-power driving method and a system structure.
Background
At present, in the existing high-power driving circuit (generally, the driving object is an insulated field effect power tube, IGBT), four driving circuit structures, a common-emitter structure, a common-collector structure, an insulated field effect transistor MOS common-drain structure, an H-bridge NMOS driving structure, and a combination structure thereof are commonly used. And adopt the high-power high-speed pulse drive structure of NMOS half-bridge structure (H bridge), because need additionally provide the power of the same kind, increased the complexity, only need the occasion that is fast, high voltage, the driving capability is big to adopt.
The conventional level shift circuit is an implementation mode of an existing special H-bridge driving circuit. The driving signal needs to be implemented by four parts, namely waveform buffering, level shifting, waveform restoring and power driving, but all working links need to consume a lot of time delay.
Aiming at the driving structure of the MOS power tube, a better driving mode is a structure which adopts strong driving of a switch edge and low bias current maintenance. In order to realize high speed, many methods are used. But now all the drive voltage variable ranges are limited to the drive voltage range. The main purpose is to satisfy the driving voltage not exceeding the MOSFET allowable range.
To achieve high power, multiple stages of amplification or high amplification combinations are generally used, increasing complexity and system delay.
The two-tube level shift circuit and the waveform restoring circuit can realize higher speed to a certain extent, but how to quickly restore is a difficult problem to realize narrow pulse. Meanwhile, the waveform restoring circuit increases the circuit complexity and generates unnecessary time delay.
Disclosure of Invention
The invention aims to provide a level conversion high-voltage high-speed high-power driving method which can generate a simple and reliable method for high-voltage switch application, high-voltage high-speed pulse modulation and level conversion and conventional MOSFET or IGBT switch driving by simplifying intermediate logic links and fully utilizing the characteristics of devices.
Another object of the present invention is to provide a level-shift high-voltage high-speed high-power driving system structure capable of operating a level-shift high-voltage high-speed high-power driving method.
The embodiment of the invention is realized by the following steps:
in a first aspect, an embodiment of the present application provides a level-shift high-voltage high-speed high-power driving method, which includes that an input structure is driven in a complementary input manner, rising edges and falling edges have current driving capability, and instantaneous large-current driving capability is achieved through front edge or back edge enhancement; the middle high-voltage driving structure works in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND simultaneously; the internal structure current is controlled, and the driving voltage is clamped through a reverse diode or an equivalent structure thereof, so that the input of the output power tube does not exceed the input allowable range.
In some embodiments of the present invention, the switching connection of the output power driving circuit is an H-bridge connection, and an NMOS structure is adopted.
In some embodiments of the present invention, the above further includes: the drive is composed of bipolar devices, the level shift mode is adopted for work, and the input mode is adopted for work in a differential drive mode.
In some embodiments of the present invention, the above further includes: the drive works in a full voltage pulse mode, and the input works in a differential drive mode.
In some embodiments of the present invention, the controlling the internal structure current, and the clamping the driving voltage by a reverse diode or an equivalent structure thereof, so that the output power tube input does not exceed the input allowable range includes: the internal control driving device is a voltage control current source structure or a current control current source structure and controls the maximum output capacity of current.
In some embodiments of the present invention, the above further includes: according to the output capability of the main drive level pulse and the power supply voltage resistance of the internal level conversion switching tube, the device has dual functions of level conversion and power drive.
In some embodiments of the present invention, the foregoing further includes: the control structure of the input structure is the same as that of the output structure, so that the upper and lower power driving tubes have similar time delay.
In a second aspect, an embodiment of the present application provides a level-shift high-voltage high-speed high-power driving system structure, which includes an input structure module, configured to drive an input structure in a complementary input manner, where rising edges and falling edges have current driving capability, and instantaneous large-current driving capability is achieved by front edge or back edge enhancement;
the high-voltage driving structure module is used for enabling the middle high-voltage driving structure to work in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND;
the clamping module is used for controlling the current of an internal structure, and clamping the driving voltage through a reverse diode or an equivalent structure thereof so as to enable the input of the output power tube not to exceed an input allowable range.
Compared with the prior art, the embodiment of the invention has at least the following advantages or beneficial effects:
1. a simple and reliable drive structure can be produced, which is advantageous for integration. The wide voltage range of about 10V-100V, the high speed of 1000A/mu s-2000A/mu s, the delay time of 20ns, the large current of 40Amax and the wide pulse range of 20 ns-dozens of mu s can be realized.
2. The intermediate link adopts a full-voltage working mode, and the conventional operation of waveform restoration is eliminated.
3. The input level shift adopts a common-emitter structure, and works in a linear region, and experiments prove that the speed of the common-emitter structure is superior to that of a common-collector structure no matter whether the common-emitter structure is switched on or switched off.
4. In order to simultaneously guarantee the driving power and the grid voltage clamping, a triode is adopted to replace a diode, and the clamping and driving purposes are simultaneously completed.
5. The circuit structure of the H-bridge drive, which is simple and reliable, and is suitable for high speed, high voltage, high power and low time delay, can be generated, and the application range of the drive circuit is enlarged.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic step diagram of a level-shift high-voltage high-speed high-power driving method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a basic driving structure provided in an embodiment of the present invention;
FIG. 3 is a diagram illustrating a first level shift driving capability according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a second level shift driving capability according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating a third level shift driving capability according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a high-speed H-bridge driver application circuit according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a structural module of a level shift high-voltage high-speed high-power driving system according to an embodiment of the present invention.
Icon: 10-an input structure module; 20-high voltage driving structure module; 30-clamping module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures.
It is to be noted that the term "comprises," "comprising," or any other variation thereof is intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments and features of the embodiments described below can be combined with one another without conflict.
Example 1
Referring to fig. 1, fig. 1 is a schematic diagram of steps of a level-conversion high-voltage high-speed high-power driving method according to an embodiment of the present invention, which is shown as follows:
step S100, the input structure is driven in a complementary input mode, the rising edge and the falling edge have current driving capability, and the instantaneous large-current driving capability is achieved through the front edge or the rear edge enhancement;
in some embodiments, the input structure is driven by a complementary input mode, the rising edge and the falling edge have stronger current driving capability, and the instantaneous large current driving capability is achieved by leading edge or trailing edge enhancement, so that a very wide voltage range of about 10V-100V, a high speed of 1000A/Mus-2000A/Mus, a delay time of 20ns, a large current of 40Amax and a wide pulse range of 20 ns-dozens of Mus can be realized.
Step S110, the middle high-voltage driving structure works in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND simultaneously;
in some embodiments, a high level VH, which refers to a high voltage as opposed to a low level, is one term of electrical engineering. Among the logic levels, the minimum input high level allowed when the input of the logic gate is a high level is guaranteed, and when the input level is higher than the input high voltage (Vih), the input level is considered as a high level. A low level (Vil) refers to the maximum input low level allowed when the input to the logic gate is guaranteed to be low, and when the input level is lower than Vil, the input level is considered low. Is a low voltage as opposed to a high level, which in this embodiment is a low level ground.
And step S120, controlling the current of the internal structure, and clamping the driving voltage through a reverse diode or an equivalent structure thereof to ensure that the input of the output power tube does not exceed an input allowable range.
In some embodiments, the internal structure current is controlled, and the driving voltage is clamped through a reverse diode or an equivalent structure thereof, so that the output power tube input does not exceed the input allowable range. The output power tube adopts a voltage control device.
In some embodiments, the output power control device is only voltage controlled, so that in steady state output, a large current can be obtained with small energy, even without consuming driving energy from the power supply. NMOS devices are typically used.
In some embodiments, the internal control drive device, being either a voltage controlled current source structure or a current controlled current source structure, may control the maximum output capability of the current. Typically bipolar NPN or PNP devices are used.
In some embodiments, the main driving level has a pulse output capability of hundreds of volts, and the internal level conversion switching tube also has a power supply withstand voltage of hundreds of volts, so that the dual functions of level conversion and power driving are achieved.
In some embodiments, the same control structure is provided, so that the upper and lower power driving transistors have similar time delays, and the similar process structure is beneficial to realizing the integration and adjustment of devices.
Example 2
For a better description of the embodiments of the invention, reference will now be made to the accompanying drawings, in which specific embodiments of the invention are illustrated.
Referring to fig. 2, a basic driving unit. The driving structure with level shift full voltage is provided, the clamping diode is replaced by a triode, and the driving capability is improved. V1 and V7 have reverse logic drive, and R1 and R7 are signal internal resistances. The triode has the characteristic of current control current source, and the characteristic that the amplification factor is reduced when the triode is in heavy current enables the current to be automatically limited. Q1 adopts a common-emitter structure to make the control simpler. The circuit can obtain high speed because the waveform restoring link of the conventional level shift circuit is cancelled. The driving method is not only suitable for conventional driving, but also suitable for the driving mode (upper and lower tube complementary working mode or high-speed synchronous rectification mode) of the H bridge.
Referring to fig. 3, the input level is 5V, the output is 12V, and the narrow pulse signal of 50ns is used to drive the driving waveform of the 1nF load. The MOSFET load is simulated with a capacitor. A 15nC gate driven charge device can be simulated with the capability of driving a 100v,30a current MOSFET. The opening and closing delay is less than or equal to 10ns, and the rising edge and the falling edge are less than 10 ns.
Referring to fig. 4, a drive waveform for driving a 10nF load with a narrow pulse signal of 50ns is input at 5V and output at 12V. The MOSFET load is simulated with a capacitor. A 40nC gate driven charge device can be simulated with the capability of driving a 100v,100a current MOSFET. The opening and closing delay is less than or equal to 20ns, and the rising edge and the falling edge are less than 40 ns.
Referring to fig. 5, a drive waveform for driving a 1nF load with a narrow pulse signal of 50ns is input at a level of 5V and output at 30V. The MOSFET load is simulated with a capacitor. The opening and closing time delay is less than or equal to 10ns, and the rising edge and the falling edge are less than 10ns, so that the high-speed driving capability can be still kept.
Under the condition of no load, the output on delay time is less than or equal to 3ns, and the output off delay time is less than or equal to 5ns. Far superior to the existing drivers on the market.
In contrast to a conventional level shift driving circuit, see fig. 2. The conventional mode is slow, but can be completely independently used, and has universality. When the H bridge is used, the H bridge not only can work in a complementary working mode of an upper pipe and a lower pipe, but also can work in a mutually independent driving mode.
Referring to fig. 6, an embodiment using an H-bridge driver for high speed, high voltage, high current driving is shown. The wide voltage range of about 10V-100V, the high speed of 1000A/mu s-2000A/mu s, the delay time of 20ns, the large current of 40Amax and the wide pulse range of 20 ns-dozens of mu s can be realized.
In summary, the present invention optimizes and improves the device characteristics and practical application to produce a simple, reliable, high-speed, high-voltage, high-current pulse driver. The level conversion can be realized in a wide voltage range, and the speed and the driving capability of the voltage conversion device are far superior to those of a finished driver used in the market through parameter optimization.
Example 3
Referring to fig. 7, fig. 7 is a schematic diagram of a structural module of a level-shift high-voltage high-speed high-power driving system according to an embodiment of the present invention, which is as follows:
the input structure module 10 is used for driving an input structure in a complementary input mode, the rising edge and the falling edge of the input structure have current driving capability, and the instantaneous large-current driving capability is achieved through front edge or rear edge enhancement;
the high-voltage driving structure module 20 is used for operating the intermediate high-voltage driving structure in a full-voltage working state, that is, the output voltage of the driving power tube also operates in a high level VH and a low level GND;
the clamping module 30 is used for controlling the current of the internal structure, and the driving voltage is clamped through a reverse diode or an equivalent structure thereof, so that the input of the output power tube does not exceed the input allowable range.
In summary, the level conversion high-voltage high-speed high-power driving method and system structure provided by the embodiment of the application can generate a simple and reliable driving structure which is beneficial to integration. The wide voltage range of about 10V-100V, high speed of 1000A/mus-2000A/mus, delay time of 20ns, large current of 40Amax and wide pulse range of 20 ns-dozens of mus can be realized. The intermediate link adopts a full-voltage working mode, and the conventional operation of waveform restoration is eliminated. The input level shift adopts a common-emitter structure, and works in a linear region, and experiments prove that the speed of the common-emitter structure is superior to that of a common-collector structure no matter whether the common-emitter structure is switched on or switched off. In order to simultaneously guarantee the driving power and the grid voltage clamping, a triode is adopted to replace a diode, and the purposes of clamping and driving are simultaneously completed. The circuit structure of the H-bridge drive is simple and reliable, is suitable for high speed, high voltage, high power and low time delay, and improves the application range of the drive circuit.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (8)
1. A level conversion high-voltage high-speed high-power driving method is characterized by comprising the following steps:
the input structure is driven by adopting a complementary input mode, the rising edges and the falling edges have current driving capability, the instantaneous large current driving capability is achieved by the enhancement of the leading edges or the trailing edges, the instantaneous large current driving capability comprises a direct current power supply V1, a direct current power supply V4, a direct current power supply V7, a resistor R1, a resistor R4, a resistor R9, a resistor R18, a resistor R11, a resistor R12, a resistor R13, a capacitor C1, a capacitor C4, a capacitor Cload, a triode Q1, a triode Q2, a triode Q3, a triode Q4, a voltage stabilizing diode D3 and a voltage stabilizing diode D4, an emitter of the triode Q1 is grounded through the capacitor C1 and the resistor R9 which are connected in parallel, an emitter of the triode Q1 is connected with an anode of the voltage stabilizing diode D4, a base of the triode Q1 is connected with a cathode of the voltage stabilizing diode D4, a base of the triode Q1 is connected with an anode of the direct current power supply V1 through the resistor R1, the negative electrode of the direct current power supply V1 is grounded, the collector of the triode Q1 is connected with the base of the triode Q4, the base of the triode Q4 is connected with the emitter of the triode Q4 through the resistor R4, the emitter of the triode Q4 is grounded through the direct current power supply V4, the emitter of the triode Q4 is also used for being connected with a power supply VCC, the collector of the triode Q4 is connected with the emitter of the triode Q3, the emitter of the triode Q3 is connected with the collector of the triode Q3 through the capacitor Cload, the collector of the triode Q3 is grounded, the emitter of the triode Q3 is connected with the base of the triode Q3 through the resistor R18, the base of the triode Q3 is connected with the collector of the triode Q2, the emitter of the triode Q2 is grounded, and the base of the triode Q2 is grounded through the resistor R13, the base electrode of the triode Q2 is connected with the cathode of the voltage stabilizing diode D3, the anode of the voltage stabilizing diode D3 is grounded, the base electrode of the triode Q2 is grounded after passing through the resistor R12, the resistor R11 and the direct-current power supply V7 which are sequentially connected in series, and the capacitor C4 is connected with the resistor R12 in parallel;
the middle high-voltage driving structure works in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND simultaneously;
the internal structure current is controlled, and the driving voltage is clamped through a reverse diode or an equivalent structure thereof, so that the input of the output power tube does not exceed the input allowable range.
2. The method as claimed in claim 1, further comprising:
the switching tube connection method of the output power drive circuit is an H-bridge connection method and adopts an NMOS structure.
3. A level-shifting high-voltage high-speed high-power driving method as claimed in claim 2, further comprising:
the drive is composed of bipolar devices, the level shift mode is adopted for work, and the input mode is adopted for work in a differential drive mode.
4. A level-shifting high-voltage high-speed high-power driving method as claimed in claim 2, further comprising:
the drive adopts the mode work of full voltage pulse, and the input adopts the mode work of differential drive.
5. The method as claimed in claim 1, wherein the internal structure current is controlled, and the driving voltage is clamped by a reverse diode or its equivalent structure, so that the output power transistor input does not exceed the input allowable range, and the method comprises:
the internal control driving device is a voltage control current source structure or a current control current source structure and controls the maximum output capacity of current.
6. A level-shifting high-voltage high-speed high-power driving method as claimed in claim 1, further comprising:
according to the output capability of the main drive level pulse and the power supply voltage resistance of the internal level conversion switching tube, the device has dual functions of level conversion and power drive.
7. The method as claimed in claim 1, further comprising:
the control structure of the input structure is the same as that of the output structure, so that the upper and lower power driving tubes have similar time delay.
8. A structure of a level-shifting high-voltage high-speed high-power driving system is characterized by comprising:
an input structure module, configured to drive an input structure in a complementary input manner, wherein rising edges and falling edges have current driving capability, and instantaneous large current driving capability is achieved by leading edge or trailing edge enhancement, the input structure module includes a dc power supply V1, a dc power supply V4, a dc power supply V7, a resistor R1, a resistor R4, a resistor R9, a resistor R18, a resistor R11, a resistor R12, a resistor R13, a capacitor C1, a capacitor C4, a capacitor Cload, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a zener diode D3, and a zener diode D4, an emitter of the transistor Q1 is grounded through the capacitor C1 and the resistor R9 connected in parallel, an emitter of the transistor Q1 is connected to an anode of the zener diode D4, a base of the transistor Q1 is connected to a cathode of the zener diode D4, a base of the transistor Q1 is connected to an anode of the power supply V1 through the resistor R1, a collector of the transistor Q3 is grounded through a base of the transistor Q4, a collector of the transistor Q3 is connected to an emitter of the transistor Q3, a collector of the transistor Q3 is connected to a ground through a base of the transistor Q3, a collector of the transistor Q3 is connected to an emitter of the transistor Q3, and a collector of the transistor Q3, a collector of the transistor Q3 is connected to a collector of the transistor Q3, and a collector of the transistor Q3, the transistor 3 is connected to a ground through a transistor 3, the transistor 3, the base electrode of the triode Q2 is connected with the cathode of the voltage stabilizing diode D3, the anode of the voltage stabilizing diode D3 is grounded, the base electrode of the triode Q2 is grounded after passing through the resistor R12, the resistor R11 and the direct-current power supply V7 which are sequentially connected in series, and the capacitor C4 is connected with the resistor R12 in parallel;
the high-voltage driving structure module is used for enabling the middle high-voltage driving structure to work in a full-voltage working state, namely the output voltage of the driving power tube also works in a high level VH and a low level GND simultaneously;
the clamping module is used for controlling the current of an internal structure, and clamping the driving voltage through a reverse diode or an equivalent structure thereof, so that the input of the output power tube does not exceed the input allowable range.
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| TW201524092A (en) * | 2013-07-01 | 2015-06-16 | Hitachi Ltd | Drive circuit for semiconductor switching element, and power conversion system using it |
| CN107295707A (en) * | 2016-04-11 | 2017-10-24 | 佛山市顺德区美的电热电器制造有限公司 | Drive circuit, electromagnetic heater and driving method |
| CN207819790U (en) * | 2018-01-17 | 2018-09-04 | 黎明职业大学 | A kind of three-phase sine-wave inverter |
| CN208836102U (en) * | 2018-10-11 | 2019-05-07 | 扬州大学 | A kind of MOSFET driving circuit based on pulse transformer isolation |
| CN213585726U (en) * | 2020-11-10 | 2021-06-29 | 深圳市晶诚微科技有限公司 | Driver based on MOS tube |
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| CN113938007A (en) | 2022-01-14 |
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