CN204967263U - Buffer circuit and dual power supply system - Google Patents
Buffer circuit and dual power supply system Download PDFInfo
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- CN204967263U CN204967263U CN201520714349.1U CN201520714349U CN204967263U CN 204967263 U CN204967263 U CN 204967263U CN 201520714349 U CN201520714349 U CN 201520714349U CN 204967263 U CN204967263 U CN 204967263U
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Abstract
The utility model discloses a buffer circuit, including MOS pipe and drive module, drive module has grid controlled end, source electrode sense terminal and drain electrode sense terminal, the grid of MOS pipe with the grid controlled end is connected, the source electrode of MOS pipe with the source electrode sense terminal is connected, the drain electrode of MOS pipe with the drain electrode sense terminal is connected, the source electrode of MOS pipe does buffer circuit's isolation input end, the drain electrode of MOS pipe does buffer circuit's isolation output. Correspondingly, still disclose a dual power supply system, including first power, a buffer circuit, second source, the 2nd buffer circuit and load, a buffer circuit with the 2nd buffer circuit is claim 1 -5 buffer circuit. Adopt the embodiment of the utility model provides a, under the prerequisite of guaranteeing the uninterrupted power supply, effectively reduce the power output loss, improve mains operated system stability.
Description
Technical field
The utility model relates to electronic technology field, is specifically related to a kind of buffer circuit and dual power supply system.
Background technology
In electronic technology field, there is the occasion that a part of reliability requirement is higher, need two power sources in parallel to export power supply, uninterrupted power supply, that is, when a power supply damages, another power supply can normally export, thus the normal operation of the system of maintenance.But if any process is not done in the output of power supply, when a power supply damages, and the state damaged is output short circuit, then another power supply used in parallel can be caused to be shorted, and power supply can be interrupted.
In order to address this problem, as shown in Figure 1, usually, to connect respectively diode D1 and D2 at the output of two power supplys, when a wherein power supply short circuit, diode reverse is ended, then the output current of another power supply used in parallel cannot flow in the power supply of damage, thus maintains the normal output of another power supply.But Shortcomings part, what the power supply due to electric power system exported is low-voltage, high-current, and electric power outputting current is comparatively large, and the loss of diode D1, D2 is very big, and the low and diode of power supply conversion efficiency can be caused to cross the problem of cause thermal damage.
Utility model content
The purpose of this utility model is, provides a kind of buffer circuit and dual power supply system, under the prerequisite ensureing uninterrupted power supply, effectively reduces power supply output loss, improves electric supply system stability.
For solving above technical problem, the utility model embodiment provides a kind of buffer circuit, comprises metal-oxide-semiconductor and driver module; Described driver module has grid control end, source electrode test side and drain electrode test side; The grid of described metal-oxide-semiconductor is connected with described grid control end, and the source electrode of described metal-oxide-semiconductor is connected with described source electrode test side, and the drain electrode of described metal-oxide-semiconductor is connected with described drain electrode test side;
The source electrode of described metal-oxide-semiconductor is the Isolation input end of described buffer circuit; The drain electrode of described metal-oxide-semiconductor is the isolation and amplifier end of described buffer circuit.
Further, described driver module comprises the first triode and the second triode; The collector electrode of described first triode connects driving DC power supply; The emitter of described second triode connects described driving DC power supply; The emitter of described second triode is connected with the base stage of described first triode, and the base stage of described first triode is also connected with the base stage of described second triode;
The very described grid control end of current collection of described first triode; The very described source electrode test side of transmitting of described first triode; The very described drain electrode test side of current collection of described second triode.
Described driving DC power supply provides bias voltage for described first triode and described second triode.
Further, described driver module also comprises the first resistance and the second resistance;
Then the collector electrode of described first triode connects driving DC power supply, is specially: the collector electrode of described first triode connects driving DC power supply by described first resistance;
Then the emitter of described second triode connects described driving DC power supply, is specially: the emitter of described second triode connects described driving DC power supply by described second resistance.
Described first resistance is used for the first triode described in current-limiting protection; Described second resistance is used for the second triode described in current-limiting protection.
Further, described driver module comprises the first triode and diode; The base stage of described first triode is connected with the anode of described diode; The collector electrode of described first triode connects driving DC power supply; The anode of described diode connects described driving DC power supply;
The very described grid control end of current collection of described first triode; The very described source electrode test side of transmitting of described first triode; The negative electrode of described diode is described drain electrode test side.
Described driving DC power supply provides bias voltage for described first triode and described diode.
Further, described driver module also comprises the first resistance and the second resistance;
Then the collector electrode of described first triode connects driving DC power supply, is specially: the collector electrode of described first triode connects driving DC power supply by described first resistance;
Then the anode of described diode connects described driving DC power supply, is specially: the anode of described diode connects described driving DC power supply by described second resistance.
Described first resistance is used for the first triode described in current-limiting protection; Described second resistance is used for diode described in current-limiting protection.
Further, described metal-oxide-semiconductor is N-channel MOS pipe.
Further, described first triode is NPN type triode.
Further, described second triode is NPN type triode.
Meanwhile, the utility model also provides a kind of dual power supply system, comprises the first DC power supply, the first buffer circuit, the second DC power supply, the second buffer circuit and load;
Described first buffer circuit is the buffer circuit described in any one of claim 1 to 7;
Described second buffer circuit is the buffer circuit described in any one of claim 1 to 7;
Described first DC power supply is connected with the Isolation input end of described first buffer circuit, and the isolation and amplifier end of described first buffer circuit is connected with the power input of described load; Described second DC power supply is connected with the Isolation input end of described second buffer circuit, and the isolation and amplifier end of described second buffer circuit is connected with the power input of described load.
It should be noted that, the utility model can also provide a kind of multi-power supply system, and its circuit structure is the superposition of described dual power supply system, that is, each power supply is all connected with load by a buffer circuit.
Compared to prior art, the beneficial effect of a kind of buffer circuit of the present utility model and dual power supply system is: when system power supply is normal, the driver module of buffer circuit is by detecting metal-oxide-semiconductor source electrode and drain voltage, the grid voltage controlling metal-oxide-semiconductor makes metal-oxide-semiconductor saturation conduction, makes the electric current of power supply all flow to load; When a certain road power supply breaks down, the buffer circuit be connected with trouble power is in cut-off state, guarantees that other power supplies can not be shorted, and energy normal power supply is to load, thus ensure that the uninterrupted power supply of system.On the other hand, during system worked well, because the saturation conduction resistance of metal-oxide-semiconductor is very little, under big current powers occasion, can effectively reduce power supply output loss, and metal-oxide-semiconductor is not fragile, electric supply system stability can be improved.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of dual power supply system of prior art;
Fig. 2 is the structural representation of a kind of dual power supply system embodiment one of the present utility model;
Fig. 3 is the structural representation of a kind of dual power supply system embodiment two of the present utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment one
Refer to Fig. 2, it is the structural representation of a kind of dual power supply system embodiment one of the present utility model.A kind of dual power supply system that the present embodiment provides, comprises the first DC power supply 11, first buffer circuit 12, second DC power supply 13, second buffer circuit 14 and load 15; It should be noted that, described first buffer circuit 12 is identical with the circuit structure of described second buffer circuit 14, the buffer action provided for described duplicate supply is also identical, the first buffer circuit 12 that the present embodiment provides can be used for multi-power supply system, that is, each power supply is all connected with load by first buffer circuit 12.
Described first buffer circuit 12 comprises metal-oxide-semiconductor Q1 and driver module; Described driver module has grid control end, source electrode test side and drain electrode test side; The grid of described metal-oxide-semiconductor Q1 is connected with described grid control end, and the source electrode of described metal-oxide-semiconductor Q1 is connected with described source electrode test side, and the drain electrode of described metal-oxide-semiconductor Q1 is connected with described drain electrode test side;
The source electrode of described metal-oxide-semiconductor Q1 is the Isolation input end of described first buffer circuit 12; The drain electrode of described metal-oxide-semiconductor Q1 is the isolation and amplifier end of described first buffer circuit 12.
Preferably, described metal-oxide-semiconductor Q1 is N-channel MOS pipe.
In the present embodiment, described driver module is by connecting source electrode and the drain electrode of metal-oxide-semiconductor Q1, control the grid voltage of metal-oxide-semiconductor Q1 according to source voltage and drain voltage, the threshold condition whether meeting saturation conduction by the gate source voltage of metal-oxide-semiconductor Q1 controls conducting or the cut-off of metal-oxide-semiconductor Q1.
Further, described driver module comprises the first triode Q2 and the second triode Q3; The collector electrode of described first triode Q2 connects driving DC power supply VCC; The emitter of described second triode Q3 connects described driving DC power supply VCC; The emitter of described second triode Q3 is connected with the base stage of described first triode Q2, and the base stage of described first triode Q2 is also connected with the base stage of described second triode Q3;
The very described grid control end of current collection of described first triode Q2; The very described source electrode test side of transmitting of described first triode Q2; The very described drain electrode test side of current collection of described second triode Q3.
Further, described driver module also comprises the first resistance R1 and the second resistance R2;
Then the collector electrode of described first triode Q2 connects driving DC power supply VCC, is specially: the collector electrode of described first triode Q2 connects driving DC power supply VCC by described first resistance R1;
Then the emitter of described second triode Q3 connects described driving DC power supply VCC, is specially: the emitter of described second triode Q3 connects described driving DC power supply VCC by described second resistance R2.
Preferably, described first triode Q2 and the second triode Q3 is NPN type triode.
In the present embodiment, described driving DC power supply VCC provides bias voltage for described first triode Q2 and described second triode Q3; Described first resistance R1 is used for the first triode Q2 described in current-limiting protection; Described second resistance R2 is used for the second triode Q3 described in current-limiting protection.
Described second buffer circuit 14 is identical with foregoing first buffer circuit 12, as shown in Figure 2, comprises metal-oxide-semiconductor Q4; Triode Q5, Q6; Resistance R3, R4, its concrete connected mode is described above, repeats no more.
Described first DC power supply 11 is connected with the Isolation input end of described first buffer circuit 12, and the isolation and amplifier end of described first buffer circuit 12 is connected with the power input of described load 15; Described second DC power supply 13 is connected with the Isolation input end of described second buffer circuit 14, and the isolation and amplifier end of described second buffer circuit 14 is connected with the power input of described load 15.
In the present embodiment, described first DC power supply 11 and described second DC power supply 13 are provided by switch power module, and such as, described switch power module inputs a road ac signal, correspondingly exports a road DC signal.In actual applications, the power supply for powering can be, but not limited to two or more power sources in parallel and powers, and described power supply carries electric current to load after being connected with a buffer circuit respectively again.
The operation principle of the dual power supply system of the present embodiment will be described below:
When system power supply is normal, described first DC power supply 11 and described second DC power supply 13 export the current signal of a low-voltage and high-current respectively, for described first buffer circuit 12, the source voltage of metal-oxide-semiconductor Q1 is higher than drain voltage, the transmitting very high level of the first triode Q2, the current collection very low level of the second triode Q3, then the emitter junction voltage of the first triode Q2 is reverse-biased, makes the first triode Q2 be in cut-off state; The emitter junction of the second triode Q3 and the voltage of collector junction are positively biased, make the second triode Q3 be in saturation conduction state; Thus the first triode Q2 current collection very high voltage, then the gate source voltage of metal-oxide-semiconductor Q1 meets the condition of saturation conduction, makes metal-oxide-semiconductor Q1 be in saturation conduction state, and thus the electric current of described first DC power supply 11 flows to load 15 by metal-oxide-semiconductor Q1.In like manner, the electric current of described second DC power supply 13 flows to load 15 by metal-oxide-semiconductor Q4.
When system power supply fault, with described first DC power supply 11 fault, described second DC power supply 13 is normally example, then the source voltage of metal-oxide-semiconductor Q1 is zero, and drain voltage is higher than source voltage; The transmitting very low level of described first triode Q2, the current collection very high level of described second triode Q3, thus described first triode Q2 saturation conduction, described second triode Q3 ends, make the gate source voltage of described metal-oxide-semiconductor Q1 lower than saturation conduction threshold value, described metal-oxide-semiconductor Q1 ends, thus the electric current that described second DC power supply 13 normally exports can not flow to described first DC power supply 11, avoid causing the phenomenon that described second DC power supply 13 is shorted, system power supply is interrupted.
Embodiment two
Refer to Fig. 2, it is the structural representation of a kind of dual power supply system embodiment two of the present utility model.This example provides a kind of dual power supply system, comprises the first DC power supply 11, first buffer circuit 12, second DC power supply 13, second buffer circuit 14 and load 15; It should be noted that, described first buffer circuit 12 is identical with the circuit structure of described second buffer circuit 14, the buffer action provided for described duplicate supply is also consistent, namely the first buffer circuit 12 that the present embodiment provides and the second buffer circuit 14 can be used for multi-power supply system, and each power supply is all connected with load by first buffer circuit 12.
Described first buffer circuit 12 comprises metal-oxide-semiconductor Q1 and driver module; Described driver module has grid control end, source electrode test side and drain electrode test side; The grid of described metal-oxide-semiconductor Q1 is connected with described grid control end, and the source electrode of described metal-oxide-semiconductor Q1 is connected with described source electrode test side, and the drain electrode of described metal-oxide-semiconductor Q1 is connected with described drain electrode test side;
The source electrode of described metal-oxide-semiconductor Q1 is the Isolation input end of described first buffer circuit 12; The drain electrode of described metal-oxide-semiconductor Q1 is the isolation and amplifier end of described first buffer circuit 12.
Preferably, described metal-oxide-semiconductor Q1 is N-channel MOS pipe.
In the present embodiment, described driver module is by connecting source electrode and the drain electrode of metal-oxide-semiconductor Q1, control the grid voltage of metal-oxide-semiconductor Q1 according to source voltage and drain voltage, the threshold condition whether meeting its saturation conduction by the gate source voltage of metal-oxide-semiconductor Q1 controls conducting or the cut-off of metal-oxide-semiconductor Q1.
Further, described driver module comprises the first triode Q2 and diode D1; The base stage of described first triode Q2 is connected with the anode of described diode D1; The collector electrode of described first triode Q2 connects driving DC power supply VCC; The anode of described diode D1 connects described driving DC power supply VCC;
The very described grid control end of current collection of described first triode Q2; The very described source electrode test side of transmitting of described first triode Q2; The negative electrode of described diode D1 is described drain electrode test side.
Further, described driver module also comprises the first resistance R1 and the second resistance R2;
Then the collector electrode of described first triode Q2 connects driving DC power supply VCC, is specially: the collector electrode of described first triode Q2 connects driving DC power supply VCC by described first resistance R1;
Then the anode of described diode D1 connects described driving DC power supply VCC, is specially: the anode of described diode D1 connects described driving DC power supply VCC by described second resistance R2.
Preferably, described first triode Q2 is NPN type triode.
In the present embodiment, described driving DC power supply VCC provides bias voltage for described first triode Q2 and described diode D1; Described first resistance R1 is used for the first triode Q2 described in current-limiting protection; Described second resistance R2 is used for diode D1 described in current-limiting protection.
Described second buffer circuit 14 is identical with foregoing first buffer circuit 12, as shown in Figure 3, comprises metal-oxide-semiconductor Q4; Triode Q5; Diode D2; Resistance R3, R4, its concrete connected mode is described above, repeats no more.
Described first DC power supply 11 is connected with the Isolation input end of described first buffer circuit 12, and the isolation and amplifier end of described first buffer circuit 12 is connected with the power input of described load 15; Described second DC power supply 13 is connected with the Isolation input end of described second buffer circuit 14, and the isolation and amplifier end of described second buffer circuit 14 is connected with the power input of described load 15.
In the present embodiment, described first DC power supply 11 and described second DC power supply 13 are provided by switch power module, and such as, described switch power module inputs a road AC power, correspondingly exports a road DC power supply.In actual applications, the power supply for powering can be, but not limited to two or more power sources in parallel and powers, and described power supply carries electric current to load after being connected with a buffer circuit respectively again.
The operation principle of the dual power supply system of the present embodiment will be described below:
When system power supply is normal, described first DC power supply 11 and described second DC power supply 13 export the current signal of a low-voltage and high-current respectively.For described first buffer circuit 12, the source voltage of metal-oxide-semiconductor Q1 higher than drain voltage, the transmitting very high level of the first triode Q2, the negative electrode of diode D1 is low level, then the emitter junction voltage of the first triode Q2 is reverse-biased, makes the first triode Q2 be in cut-off state; The anode of described diode D1 is high level, makes diode D1 be in conducting state; Thus the current collection very high voltage of the first triode Q2, the gate source voltage of metal-oxide-semiconductor Q1, higher than the threshold value of saturation conduction, makes metal-oxide-semiconductor Q1 be in saturation conduction state, and thus the electric current of described first DC power supply 11 flows to load 15 by metal-oxide-semiconductor Q1.In like manner, the electric current of described second DC power supply 13 flows to load 15 by metal-oxide-semiconductor Q4.
When system power supply fault, with described first DC power supply 11 power supply trouble, it is example that the second DC power supply 13 is powered normal, then the source voltage of metal-oxide-semiconductor Q1 is zero, and drain voltage is higher than source voltage; The transmitting very low level of the first triode Q2, the negative electrode of diode D1 is high level, thus the first triode Q2 saturation conduction, diode D1 ends, make the gate source voltage of metal-oxide-semiconductor Q1 lower than saturation conduction threshold value, metal-oxide-semiconductor Q1 ends, thus the electric current that described second DC power supply 13 normally exports can not flow to described first DC power supply 11, avoids causing the phenomenon that described second DC power supply 13 is shorted, system power supply is interrupted.
Compared to prior art, a kind of buffer circuit that the utility model embodiment provides and the beneficial effect of dual power supply system are:
Buffer circuit of the present utility model can ensure that other power supplies can not be shorted when a certain road power supply breaks down, and energy normal power supply is to load, thus ensure that the uninterrupted power supply of system.When system normal power supply, the conducting resistance that metal-oxide-semiconductor is in saturation conduction state only has a few milliohm, and the diode limit current voltage drop of prior art is generally 0.4V, under the big current of tens peaces powers occasion, the conducting power loss of metal-oxide-semiconductor is obviously little than the loss of diode, can effectively reduce power supply output loss; And the thermal losses due to metal-oxide-semiconductor under the state of working long hours is relatively low, metal-oxide-semiconductor is not fragile, thus improves the stability of electric power system.
The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection range of the present utility model.
Claims (9)
1. a buffer circuit, is characterized in that, comprises metal-oxide-semiconductor and driver module; Described driver module has grid control end, source electrode test side and drain electrode test side; The grid of described metal-oxide-semiconductor is connected with described grid control end, and the source electrode of described metal-oxide-semiconductor is connected with described source electrode test side, and the drain electrode of described metal-oxide-semiconductor is connected with described drain electrode test side;
The source electrode of described metal-oxide-semiconductor is the Isolation input end of described buffer circuit; The drain electrode of described metal-oxide-semiconductor is the isolation and amplifier end of described buffer circuit.
2. buffer circuit as claimed in claim 1, it is characterized in that, described driver module comprises the first triode and the second triode; The collector electrode of described first triode connects driving DC power supply; The emitter of described second triode connects described driving DC power supply; The emitter of described second triode is connected with the base stage of described first triode, and the base stage of described first triode is also connected with the base stage of described second triode;
The very described grid control end of current collection of described first triode; The very described source electrode test side of transmitting of described first triode; The very described drain electrode test side of current collection of described second triode.
3. buffer circuit as claimed in claim 2, it is characterized in that, described driver module also comprises the first resistance and the second resistance;
Then the collector electrode of described first triode connects driving DC power supply, is specially: the collector electrode of described first triode connects driving DC power supply by described first resistance;
Then the emitter of described second triode connects described driving DC power supply, is specially: the emitter of described second triode connects described driving DC power supply by described second resistance.
4. buffer circuit as claimed in claim 1, it is characterized in that, described driver module comprises the first triode and diode; The base stage of described first triode is connected with the anode of described diode; The collector electrode of described first triode connects driving DC power supply; The anode of described diode connects described driving DC power supply;
The very described grid control end of current collection of described first triode; The very described source electrode test side of transmitting of described first triode; The negative electrode of described diode is described drain electrode test side.
5. buffer circuit as claimed in claim 4, it is characterized in that, described driver module also comprises the first resistance and the second resistance;
Then the collector electrode of described first triode connects driving DC power supply, is specially: the collector electrode of described first triode connects driving DC power supply by described first resistance;
Then the anode of described diode connects described driving DC power supply, is specially: the anode of described diode connects described driving DC power supply by described second resistance.
6. the buffer circuit as described in as arbitrary in claim 1 to 5, it is characterized in that, described metal-oxide-semiconductor is N-channel MOS pipe.
7. the buffer circuit as described in as arbitrary in claim 2 to 5, it is characterized in that, described first triode is NPN type triode.
8. buffer circuit as claimed in claim 2 or claim 3, it is characterized in that, described second triode is NPN type triode.
9. a dual power supply system, is characterized in that, comprises the first DC power supply, the first buffer circuit, the second DC power supply, the second buffer circuit and load;
Described first buffer circuit is the buffer circuit described in any one of claim 1 to 8;
Described second buffer circuit is the buffer circuit described in any one of claim 1 to 8;
Described first DC power supply is connected with the Isolation input end of described first buffer circuit, and the isolation and amplifier end of described first buffer circuit is connected with the power input of described load; Described second DC power supply is connected with the Isolation input end of described second buffer circuit, and the isolation and amplifier end of described second buffer circuit is connected with the power input of described load.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520714349.1U CN204967263U (en) | 2015-09-15 | 2015-09-15 | Buffer circuit and dual power supply system |
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| CN201520714349.1U CN204967263U (en) | 2015-09-15 | 2015-09-15 | Buffer circuit and dual power supply system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347085A (en) * | 2018-12-06 | 2019-02-15 | 福建宏宇电子科技有限公司 | A kind of circuit carrying out one-to-many communication using DC power system |
| CN110284983A (en) * | 2019-06-28 | 2019-09-27 | 潍柴动力股份有限公司 | A kind of fuel injection control circuit and fuel injection control method |
| CN117277261A (en) * | 2023-11-22 | 2023-12-22 | 珠海数字动力科技股份有限公司 | Low-voltage direct-current bidirectional power supply communication circuit and power supply method thereof |
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2015
- 2015-09-15 CN CN201520714349.1U patent/CN204967263U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347085A (en) * | 2018-12-06 | 2019-02-15 | 福建宏宇电子科技有限公司 | A kind of circuit carrying out one-to-many communication using DC power system |
| CN110284983A (en) * | 2019-06-28 | 2019-09-27 | 潍柴动力股份有限公司 | A kind of fuel injection control circuit and fuel injection control method |
| CN110284983B (en) * | 2019-06-28 | 2022-04-05 | 潍柴动力股份有限公司 | Oil injection control circuit and oil injection control method |
| CN117277261A (en) * | 2023-11-22 | 2023-12-22 | 珠海数字动力科技股份有限公司 | Low-voltage direct-current bidirectional power supply communication circuit and power supply method thereof |
| CN117277261B (en) * | 2023-11-22 | 2024-03-15 | 珠海数字动力科技股份有限公司 | Low-voltage direct-current bidirectional power supply communication circuit and power supply method thereof |
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