CN204168121U - A kind of metal-oxide-semiconductor parallel pulse drive circuit - Google Patents
A kind of metal-oxide-semiconductor parallel pulse drive circuit Download PDFInfo
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- CN204168121U CN204168121U CN201420672299.0U CN201420672299U CN204168121U CN 204168121 U CN204168121 U CN 204168121U CN 201420672299 U CN201420672299 U CN 201420672299U CN 204168121 U CN204168121 U CN 204168121U
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Abstract
The utility model relates to DC power supply art, and disclose a kind of metal-oxide-semiconductor parallel pulse drive circuit, comprise power supply Ui, pulse driving circuit, optical coupled switch circuit, metal-oxide-semiconductor parallel circuits, the input of described optical coupled switch circuit is connected to control signal end; The resistance that one pin of optical coupled switch circuit output end is connected with each metal-oxide-semiconductor grid of metal-oxide-semiconductor parallel circuits is connected; Another pin of optical coupled switch circuit output end is connected to 3 pin of timer N1 by diode V5, electric capacity C3, resistance R7; First diode V5 anode is connected with the negative electrode of the second diode V6; The drain electrode of the metal-oxide-semiconductor of described metal-oxide-semiconductor parallel circuits is connected to the+IN end of input power Ui, and source electrode is connected to output+OUT, and this use is novel for power circuit switch control rule, can make metal-oxide-semiconductor quick closedown, realizes power cutoff and exports; Greatly reduce the turn-off time of metal-oxide-semiconductor, thus can export by fast and reliable ground power cutoff.Have the advantages that volume is little, circuit uses simply, reliability is high.
Description
Technical field
The utility model relates to a kind of DC power supply art, and particularly a kind of middle low power exports and has a kind of metal-oxide-semiconductor parallel pulse drive circuit used in the circuit of output switch controlling functions.
Background technology
Switching device conventional in middle low power circuit at present mainly contains relay, metal-oxide-semiconductor.Because volume is large, price is high, to radiating condition, relay requires that the reason such as high, switching frequency is low, required driving power is large is not suitable for using in a lot of occasion, and metal-oxide-semiconductor because switching speed is fast, easily the advantage such as parallel connection, required driving power is low, volume is little, low price started to replace in a lot of occasion the device for power switching that relay becomes conventional.But metal-oxide-semiconductor switching circuit exists two problems: first metal-oxide-semiconductor switching circuit all needs a level signal to carry out the conducting of driven MOS pipe, and the mode addressed this is that all needs an additional special auxiliary source usually; Secondly the metal-oxide-semiconductor dissipation power low moment turning off is fragile, and the mode addressed this is that is generally take the method for paralleling MOS pipe.Therefore add cost and the volume of input source so undoubtedly, cause unnecessary waste.
Summary of the invention
Technical problem to be solved in the utility model is to provide a kind of metal-oxide-semiconductor parallel pulse drive circuit, and when opening output, the pulse voltage produced by 555 circuit drives the conducting of paralleling MOS pipe, and realizing circuit externally exports.Export the grid-source voltage of the instantaneous trip metal-oxide-semiconductor turned off, the grid-source electrode discharge path of conducting simultaneously makes its repid discharge, thus turns off output fast.The pulse signal using 555 circuit to produce in this way carrys out the problem that the conducting of driven MOS pipe eliminates auxiliary source, also solves the excessive problem of metal-oxide-semiconductor shutdown moment power simultaneously.
In order to realize the object solved the problems of the technologies described above, the utility model have employed following technical scheme:
A kind of metal-oxide-semiconductor parallel pulse drive circuit, comprise power supply Ui, pulse driving circuit, optical coupled switch circuit, metal-oxide-semiconductor parallel circuits, metal-oxide-semiconductor G-S end in parallel is provided with discharge circuit, and the drain electrode of the metal-oxide-semiconductor V1 of described metal-oxide-semiconductor parallel circuits is connected to the+IN end of input power Ui, the drain electrode of the second metal-oxide-semiconductor V2, one end of the second resistance R2; The source electrode of the first metal-oxide-semiconductor V1 is connected to and exports+OUT, the source electrode of the second metal-oxide-semiconductor V2, one end of the 3rd resistance R3, one end of the 4th resistance R4, the anode of the second diode V6; The grid of the first metal-oxide-semiconductor V1 is connected to the other end of the 3rd resistance R3, one end of the 5th resistance R5; The grid of the second metal-oxide-semiconductor V2 is connected to the other end of the 4th resistance R4, one end of the 6th resistance R6;
Described optical coupled switch circuit comprises optocoupler V3, and optocoupler V3 input 1 pin connects the other end of the first resistance R1, and 2 pin of optocoupler V3 are connected to control signal end; The other end of the 5th resistance R5 that 3 pin of optocoupler V3 output are connected with metal-oxide-semiconductor V1, V2, the other end of the 6th resistance R6 are connected; 4 pin of optocoupler V3 are connected to 3 pin of timer N1 by the first diode V5, the second electric capacity C3, the 7th resistance R7; One end that first diode V5 anode is connected to the 3rd electric capacity C3 is connected with the negative electrode of the second diode V6;
Described pulse driving circuit comprises timer N1, and 1 pin of timer N1 is connected to the-IN end of power supply Ui, exports-OUT end, the negative pole of the first electric capacity C1, the negative electrode of the first voltage-stabiliser tube V4, one end of the second electric capacity C2, one end of the 4th electric capacity C4; 2 pin of timer N1 are connected to 6 pin of timer N1, the other end of the 4th electric capacity C4, one end of the 8th resistance R8, one end of the 9th resistance R9; 3 pin of timer N1 are connected to one end of the 7th resistance R7; 4 pin of timer N1 are connected to 8 pin, the other end of the second resistance R2, the anode of the first voltage-stabiliser tube V4, the positive pole of the first electric capacity C1, the other end of the 9th resistance R9 of timer N1; 5 pin of timer N1 are connected to the other end of the second electric capacity C2; 7 pin of timer N1 are connected to the other end of the 8th resistance R8.
Metal-oxide-semiconductor parallel pulse drive circuit, concrete described metal-oxide-semiconductor V1, V2 are a kind of power MOS pipes with switching function; The model of the first metal-oxide-semiconductor V1 is IRFP064N, the model of the second metal-oxide-semiconductor V2 is IRFP064N.
Described metal-oxide-semiconductor parallel pulse drive circuit, the model of the first optocoupler V3 is M211.
Described metal-oxide-semiconductor parallel pulse drive circuit, the model of described first voltage-stabiliser tube V4 is JBZX49C15.
Described metal-oxide-semiconductor parallel pulse drive circuit, the model of described timer N1 is ICM7555ID.
By adopting technique scheme, the utility model has following beneficial effect:
A kind of metal-oxide-semiconductor parallel pulse drive circuit, the pulse voltage produced by 555 circuit drives paralleling MOS pipe, eliminate auxiliary source module, add discharge circuit at output mos pipe G-S end simultaneously, G-S can be made repid discharge is held when turning off metal-oxide-semiconductor, greatly reduce the turn-off time of metal-oxide-semiconductor, can export by fast and reliable ground power cutoff.Thus loss when reducing switch, reach the effect optimizing delivery efficiency and volume.
The utility model has the advantages that volume is little, circuit uses simply, reliability is high, applied widely, is applicable to middle low power contactor and controls, have very wide application prospect.
Accompanying drawing explanation
Fig. 1 is the metal-oxide-semiconductor parallel pulse drive circuit figure of this patent.
In figure, power supply Ui, the first metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2, the first optocoupler V3, the first voltage-stabiliser tube V4, the first diode V5, the second diode V6, timer N1, the first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4.
Embodiment
Below in conjunction with accompanying drawing, further explanation is explained to this patent.But the protection range of this patent is not limited to concrete execution mode.
As shown in Figure 1, a kind of metal-oxide-semiconductor parallel pulse drive circuit, comprise power supply Ui, pulse driving circuit, optical coupled switch circuit, metal-oxide-semiconductor parallel circuits, metal-oxide-semiconductor G-S end in parallel is provided with discharge circuit, and the drain electrode of the metal-oxide-semiconductor V1 of described metal-oxide-semiconductor parallel circuits is connected to the+IN end of input power Ui, the drain electrode of the second metal-oxide-semiconductor V2, one end of the second resistance R2; The source electrode of the first metal-oxide-semiconductor V1 is connected to and exports+OUT, the source electrode of the second metal-oxide-semiconductor V2, one end of the 3rd resistance R3, one end of the 4th resistance R4, the anode of the second diode V6; The grid of the first metal-oxide-semiconductor V1 is connected to the other end of the 3rd resistance R3, one end of the 5th resistance R5; The grid of the second metal-oxide-semiconductor V2 is connected to the other end of the 4th resistance R4, one end of the 6th resistance R6;
First optocoupler V3 input 1 pin of described optical coupled switch circuit connects the other end of the first resistance R1, and 2 pin of the first optocoupler V3 are connected to control signal end; The other end of the 5th resistance R5 that 3 pin of the first optocoupler V3 output are connected with metal-oxide-semiconductor V1, V2, the other end of the 6th resistance R6 are connected; 4 pin of the first optocoupler V3 are connected to 3 pin of timer N1 by the first diode V5, the second electric capacity C3, the 7th resistance R7; One end that first diode V5 anode is connected to the 3rd electric capacity C3 is connected with the negative electrode of the second diode V6;
1 pin of the timer N1 of described pulse driving circuit be connected to power supply Ui-IN end, export-OUT end, the negative pole of the first electric capacity C1, the negative electrode of the first voltage-stabiliser tube V4, one end of the second electric capacity C2, one end of the 4th electric capacity C4; 2 pin of timer N1 are connected to 6 pin of timer N1, the other end of the 4th electric capacity C4, one end of the 8th resistance R8, one end of the 9th resistance R9; 3 pin of timer N1 are connected to one end of the 7th resistance R7; 4 pin of timer N1 are connected to 8 pin, the other end of the second resistance R2, the anode of the first voltage-stabiliser tube V4, the positive pole of the first electric capacity C1, the other end of the 9th resistance R9 of timer N1; 5 pin of timer N1 are connected to the other end of the second electric capacity C2; 7 pin of timer N1 are connected to the other end of the 8th resistance R8.
Metal-oxide-semiconductor V1, V2 described in this described in metal-oxide-semiconductor parallel pulse drive circuit are a kind of power MOS pipes with switching function, namely complete the enhanced power metal-oxide-semiconductor of on-off action.The model of the first metal-oxide-semiconductor V1 is IRFP064N, the model of the second metal-oxide-semiconductor V2 is IRFP064N.First metal-oxide-semiconductor V1, the second metal-oxide-semiconductor V2 are concrete further, described metal-oxide-semiconductor, are the power MOS pipe that 873 factories produce.
First optocoupler V3 of this metal-oxide-semiconductor parallel pulse drive circuit is the optocoupler of on-off action, and model is M211.Described optocoupler is the optocoupler that TI company produces.
Described first voltage-stabiliser tube V4 is the voltage-stabiliser tube of restriction 555 circuit supply voltage, and model is JBZX49C15.Described voltage-stabiliser tube is the power voltage-stabiliser tube that 873 factories produce.
Described timer N1 is 555 circuit producing pulse voltage, and model is ICM7555ID.
A method of work for metal-oxide-semiconductor parallel pulse drive circuit, adopt the pulse voltage of 555 circuit generations to drive paralleling MOS pipe, its step is as follows:
1) when control signal accesses, optocoupler V3 conducting, the pulse voltage that 555 circuit produce, by the 5th resistance R5, the 6th resistance R6 that 3 pin of timer N1, the 7th resistance R7, the second electric capacity C3, the first diode V5, the first optocoupler V3 are connected with metal-oxide-semiconductor V1, V2, be applied to the G-S end of metal-oxide-semiconductor V1, V2, make the D-S of metal-oxide-semiconductor V1, V2 hold conducting, power supply externally exports;
2) when control signal disconnects, optocoupler V3 ends, and the pulse voltage being applied to the G-S end of metal-oxide-semiconductor V1, V2 is removed, and the G-S of metal-oxide-semiconductor V1, V2 holds resistance R3, R4 repid discharge by discharge circuit simultaneously, thus make metal-oxide-semiconductor quick closedown, realize power cutoff and export.
Claims (5)
1. a metal-oxide-semiconductor parallel pulse drive circuit, it is characterized in that: comprise power supply Ui, pulse driving circuit, optical coupled switch circuit, metal-oxide-semiconductor parallel circuits, metal-oxide-semiconductor G-S end in parallel is provided with discharge circuit, and the drain electrode of the metal-oxide-semiconductor V1 of described metal-oxide-semiconductor parallel circuits is connected to the+IN end of input power Ui, the drain electrode of the second metal-oxide-semiconductor V2, one end of the second resistance R2; The source electrode of the first metal-oxide-semiconductor V1 is connected to and exports+OUT, the source electrode of the second metal-oxide-semiconductor V2, one end of the 3rd resistance R3, one end of the 4th resistance R4, the anode of the second diode V6; The grid of the first metal-oxide-semiconductor V1 is connected to the other end of the 3rd resistance R3, one end of the 5th resistance R5; The grid of the second metal-oxide-semiconductor V2 is connected to the other end of the 4th resistance R4, one end of the 6th resistance R6;
Described optical coupled switch circuit comprises optocoupler V3, and optocoupler V3 input 1 pin connects the other end of the first resistance R1, and 2 pin of optocoupler V3 are connected to control signal end; The other end of the 5th resistance R5 that 3 pin of optocoupler V3 output are connected with metal-oxide-semiconductor V1, V2, the other end of the 6th resistance R6 are connected; 4 pin of optocoupler V3 are connected to 3 pin of timer N1 by the first diode V5, the second electric capacity C3, the 7th resistance R7; One end that first diode V5 anode is connected to the 3rd electric capacity C3 is connected with the negative electrode of the second diode V6;
Described pulse driving circuit comprises timer N1, and 1 pin of timer N1 is connected to the-IN end of power supply Ui, exports-OUT end, the negative pole of the first electric capacity C1, the negative electrode of the first voltage-stabiliser tube V4, one end of the second electric capacity C2, one end of the 4th electric capacity C4; 2 pin of timer N1 are connected to 6 pin of timer N1, the other end of the 4th electric capacity C4, one end of the 8th resistance R8, one end of the 9th resistance R9; 3 pin of timer N1 are connected to one end of the 7th resistance R7; 4 pin of timer N1 are connected to 8 pin, the other end of the second resistance R2, the anode of the first voltage-stabiliser tube V4, the positive pole of the first electric capacity C1, the other end of the 9th resistance R9 of timer N1; 5 pin of timer N1 are connected to the other end of the second electric capacity C2; 7 pin of timer N1 are connected to the other end of the 8th resistance R8.
2. metal-oxide-semiconductor parallel pulse drive circuit according to claim 1, is characterized in that: described metal-oxide-semiconductor V1, V2 are a kind of power MOS pipes with switching function; The model of the first metal-oxide-semiconductor V1 is IRFP064N, the model of the second metal-oxide-semiconductor V2 is IRFP064N.
3. metal-oxide-semiconductor parallel pulse drive circuit according to claim 1, is characterized in that: the model of optocoupler V3 is M211.
4. metal-oxide-semiconductor parallel pulse drive circuit according to claim 1, is characterized in that: the model of described voltage-stabiliser tube V4 is JBZX49C15.
5. metal-oxide-semiconductor parallel pulse drive circuit according to claim 1, is characterized in that: the model of described timer N1 is ICM7555ID.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420672299.0U CN204168121U (en) | 2014-11-12 | 2014-11-12 | A kind of metal-oxide-semiconductor parallel pulse drive circuit |
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| CN201420672299.0U CN204168121U (en) | 2014-11-12 | 2014-11-12 | A kind of metal-oxide-semiconductor parallel pulse drive circuit |
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| CN204168121U true CN204168121U (en) | 2015-02-18 |
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| CN201420672299.0U Expired - Fee Related CN204168121U (en) | 2014-11-12 | 2014-11-12 | A kind of metal-oxide-semiconductor parallel pulse drive circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106059590A (en) * | 2016-05-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Digital-to-analog conversion circuit and data source circuit chip |
| CN105656464B (en) * | 2016-01-06 | 2018-08-03 | 魏德米勒电联接（上海）有限公司 | A kind of power cut off delay type outputting circuit for relay |
| CN112467961A (en) * | 2020-11-11 | 2021-03-09 | 海鹰企业集团有限责任公司 | High-speed small-size large-current output switching circuit |
-
2014
- 2014-11-12 CN CN201420672299.0U patent/CN204168121U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105656464B (en) * | 2016-01-06 | 2018-08-03 | 魏德米勒电联接（上海）有限公司 | A kind of power cut off delay type outputting circuit for relay |
| CN106059590A (en) * | 2016-05-26 | 2016-10-26 | 深圳市华星光电技术有限公司 | Digital-to-analog conversion circuit and data source circuit chip |
| US10374624B2 (en) | 2016-05-26 | 2019-08-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Digital to analog conversion circuit and data source circuit chip |
| CN106059590B (en) * | 2016-05-26 | 2020-06-05 | 深圳市华星光电技术有限公司 | Digital-to-analog conversion circuit and data source circuit chip |
| CN112467961A (en) * | 2020-11-11 | 2021-03-09 | 海鹰企业集团有限责任公司 | High-speed small-size large-current output switching circuit |
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Granted publication date: 20150218 Termination date: 20191112 |
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| CF01 | Termination of patent right due to non-payment of annual fee |