CN202404471U - Band-gap reference source - Google Patents
Band-gap reference source Download PDFInfo
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- CN202404471U CN202404471U CN2011204738806U CN201120473880U CN202404471U CN 202404471 U CN202404471 U CN 202404471U CN 2011204738806 U CN2011204738806 U CN 2011204738806U CN 201120473880 U CN201120473880 U CN 201120473880U CN 202404471 U CN202404471 U CN 202404471U
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- pipe
- low noise
- gap reference
- error amplifier
- noise error
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Abstract
The utility model discloses a band-gap reference source, which comprises a zero threshold value NMOS (N-channel Mental-oxide-semiconductor) transistor MCAS, a low noise error amplifier A0, PNP (Plug N Play) transistors Q1 and Q2, and divider resistors Rs and Rf, wherein emitter electrodes of the PNP transistors Q1 and Q2 are respectively connected with a first voltage division branch of the divider resistor Rf and second serially connected voltage division branches of the divider resistors Rs and Rf, the positive input end of the low noise error amplifier A0 is connected to the first voltage division branch, the negative input end of the low noise error amplifier A0 is connected between the two divider voltages of the second voltage division branches, the grid electrode of the zero threshold value NMOS transistor MCAS is connected with the output of the low noise error amplifier A0, and the source electrode of the zero threshold value NMOS transistor MCAS is collected and connected with the first voltage division branch and the second voltage division branches to be used as output Vbg of a band-gap reference source. By applying the technical scheme of the utility model, the band-gap reference source has the remarkable advantages of small temperature drift and low noise, and can be manufactured at low cost by using a standard CMOS (Complementary Metal Oxide Semiconductor) process.
Description
Technical field
The present invention relates to band gap reference, relate in particular to temperature independent and low noise band gap reference in a kind of application.
Background technology
Along with the continuous development of electronic information technology, all have in the equipment of various application functions and handle the chip of realizing its function.And along with the difference of applied environment, chip wherein might be operated in (industry-40 ~ 85 degree, military-55 ~ 125 degree) in certain temperature range, and this just needs temperature independent reference source.In addition; For the high performance analog chip (like precision amplifier; Analog to digital converters etc.), the noise of reference source will have influence on the performance of chip, so reference source overcomes the noise of temperature disturbance and reduction reference source; To the high-performance performance of chip under specific application environment, has outstanding meaning.
Summary of the invention
Defective in view of above-mentioned prior art exists the objective of the invention is to propose a kind of band gap reference, to satisfy band-gap reference at the application requirements aspect temperature and the noise.
A kind of implementation of the object of the invention is:
A kind of band gap reference is characterized in that comprising: a NMOS pipe M
CAS, low noise error amplifier A0, base stage and collector connect into the PNP pipe Q1 and the Q2 of diode; And divider resistance Rs and Rf; The emitter of wherein said PNP pipe Q1 and Q2 is connected the first dividing potential drop branch road of divider resistance Rf and the second dividing potential drop branch road that divider resistance Rs, Rf are in series respectively; The positive input terminal of said low noise error amplifier inserts the first dividing potential drop branch road, and its negative input end inserts between two divider resistances of the second dividing potential drop branch road said NMOS pipe M
CASGrid link to each other with the output of low noise error amplifier A0, and source electrode and first, second dividing potential drop branch road converge the output V that joins for band gap reference
Bg
Further, the structure of said low noise error amplifier form and to comprise the differential pair pipe Q3 and Q4 formed by NPN, as the resistance R of tail current source
TailAnd by PMOS pipe M
P3, M
P4And resistance R
LThe source negative feedback load circuit that constitutes, wherein NPN is respectively the positive and negative input end of amplifier to the base stage of pipe Q3, Q4, and NPN is to the very output of low noise error amplifier of current collection of pipe Q4.
Further, said PNP pipe Q1 has negative temperature coefficient, and the area of PNP pipe Q2 is 8 times of PNP pipe Q1, and the electric current that is passed through is identical.
Further, said NMOS pipe M
CASIt is zero threshold value device.
The application of technical scheme of the present invention, the remarkable advantage that it had is presented as: this band gap reference has the advantages that temperature drift is little, noise is low, and can utilize standard CMOS process to realize the low-coat scale manufacturing.
Description of drawings
Fig. 1 is the whole syndeton synoptic diagram of band gap reference of the present invention;
Fig. 2 is the syndeton synoptic diagram of the low noise error amplifier of band gap reference shown in Figure 1.
Embodiment
Following constipation closes the embodiment accompanying drawing, and specific embodiments of the invention is done further to detail, so that technical scheme of the present invention is easier to understand, grasp.
The present invention satisfies the application requirements of band-gap reference aspect temperature and noise, and innovation has proposed a kind of band gap reference.The special structure of this reference source is as shown in Figure 1, comprises one zero threshold value NMOS pipe M
CAS, low noise error amplifier A0, base stage and collector connect into the PNP pipe Q1 and the Q2 of diode; And divider resistance Rs and Rf; Wherein the emitter of PNP pipe Q1 and Q2 is connected the first dividing potential drop branch road of divider resistance Rf and the second dividing potential drop branch road that divider resistance Rs, Rf are in series respectively; The positive input terminal of this low noise error amplifier inserts the first dividing potential drop branch road; And its negative input end inserts between two divider resistances of the second dividing potential drop branch road, and the grid of this NMOS pipe MCAS links to each other with the output of low noise error amplifier A0, and source electrode and first, second dividing potential drop branch road converge the output V that joins for band gap reference
Bg
This wherein, the voltage of PNP pipe Q1 has negative temperature coefficient; On the other hand, the area of PNP pipe Q2 is 8 times of PNP pipe Q1, but through same electric current, then the voltage difference of the emitter of PNP pipe Q1 and Q2 has just had positive temperature coefficient (PTC).Under a certain temperature, output V
BgHas zero-temperature coefficient.
For fear of metal-oxide-semiconductor M
CASThe low frequency 1/f noise, band gap reference adopts the resistance feedback arrangement.Moreover, adopt the NMOS of zero threshold value to manage M in this band gap reference
CAS, can increase the output area of amplifier, so can make circuit working under the low supply voltage condition.
Of Fig. 2, again from the low noise error amplifier of this band gap reference further: triode is compared with metal-oxide-semiconductor and is had bigger mutual conductance usually, and the mutual conductance of triode is collector current I
cWith thermoelectrical potential V
TRatio I
c/ V
T, the mutual conductance that is in the saturation region metal-oxide-semiconductor is the leakage current of twice and the ratio 2 * I of overdrive voltage
D/ V
Dsat, V under the normal temperature
T=26mV, and V
DsatBe generally 100mV ~ 200mV.As long as the electric current that flows through the low noise error amplifier much smaller than the electric current that flows through Q1 and Q2 in the core circuit, just exist voltage margin use the NPN pipe as the input of amplifier to pipe.And compare as input pipe with adopting metal-oxide-semiconductor, because mutual conductance is bigger, adopt the amplifier of NPN pipe to have lower noise.
Select for use NPN pipe Q3 and Q4 as the input of amplifier to pipe, source negative feedback form reduction 1/f noise is adopted in PMOS load simultaneously.For example wherein PMOS manages M
P4Noise will reduce (1+gm owing to source negative feedback
MP4* R
L) doubly, gm wherein
MP4Be M
P4Mutual conductance.
Visible through above case description about circuit structure and noise reduction thereof; Use band gap reference of the present invention; Have the advantages that temperature drift is little, noise is low; And can utilize standard CMOS process to realize the low-coat scale manufacturing, ensure the high-performance performance of chip under specific application environment.
Claims (4)
1. a band gap reference is characterized in that comprising: a NMOS pipe M
CAS, low noise error amplifier A0, base stage and collector connect into the PNP pipe Q1 and the Q2 of diode; And divider resistance Rs and Rf; The emitter of wherein said PNP pipe Q1 and Q2 is connected the first dividing potential drop branch road of divider resistance Rf and the second dividing potential drop branch road that divider resistance Rs, Rf are in series respectively; The positive input terminal of said low noise error amplifier inserts the first dividing potential drop branch road, and its negative input end inserts between two divider resistances of the second dividing potential drop branch road said NMOS pipe M
CASGrid link to each other with the output of low noise error amplifier A0, and source electrode and first, second dividing potential drop branch road converge the output V that joins for band gap reference
Bg
2. a kind of band gap reference as claimed in claim 1 is characterized in that: the structure of said low noise error amplifier forms and comprises the differential pair pipe Q3 and Q4 are made up of NPN, as the resistance R of tail current source
TailAnd by PMOS pipe M
P3, M
P4And resistance R
LThe source negative feedback load circuit that constitutes, wherein NPN is respectively the positive and negative input end of amplifier to the base stage of pipe Q3, Q4, and NPN is to the very output of low noise error amplifier of current collection of pipe Q4.
3. a kind of band gap reference as claimed in claim 1 is characterized in that: said PNP pipe Q1 has negative temperature coefficient, and the area of PNP pipe Q2 is 8 times of PNP pipe Q1, and the electric current that is passed through is identical.
4. a kind of band gap reference as claimed in claim 1 is characterized in that: said NMOS pipe M
CASIt is zero threshold value device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204738806U CN202404471U (en) | 2011-11-24 | 2011-11-24 | Band-gap reference source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204738806U CN202404471U (en) | 2011-11-24 | 2011-11-24 | Band-gap reference source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202404471U true CN202404471U (en) | 2012-08-29 |
Family
ID=46702110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204738806U Expired - Lifetime CN202404471U (en) | 2011-11-24 | 2011-11-24 | Band-gap reference source |
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| CN (1) | CN202404471U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102419610A (en) * | 2011-11-24 | 2012-04-18 | 思瑞浦(苏州)微电子有限公司 | Band-gap reference source |
| CN103353782A (en) * | 2013-03-04 | 2013-10-16 | 香港应用科技研究院有限公司 | Low-power-voltage band gap reference circuit and method |
| CN103677056A (en) * | 2013-06-20 | 2014-03-26 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage |
| CN105759895A (en) * | 2016-05-03 | 2016-07-13 | 成都振芯科技股份有限公司 | Current source circuit with negative temperature coefficient |
| CN106933286A (en) * | 2015-12-31 | 2017-07-07 | 上海贝岭股份有限公司 | Reference voltage module |
| CN110333752A (en) * | 2019-08-06 | 2019-10-15 | 南京微盟电子有限公司 | A kind of firm power linear voltage regulator |
| CN110825155A (en) * | 2019-12-06 | 2020-02-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zero temperature coefficient reference voltage and current source generating circuit |
-
2011
- 2011-11-24 CN CN2011204738806U patent/CN202404471U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102419610A (en) * | 2011-11-24 | 2012-04-18 | 思瑞浦(苏州)微电子有限公司 | Band-gap reference source |
| CN103353782A (en) * | 2013-03-04 | 2013-10-16 | 香港应用科技研究院有限公司 | Low-power-voltage band gap reference circuit and method |
| US9086706B2 (en) | 2013-03-04 | 2015-07-21 | Hong Kong Applied Science and Technology Research Institute Company Limited | Low supply voltage bandgap reference circuit and method |
| CN103677056A (en) * | 2013-06-20 | 2014-03-26 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage |
| CN106933286A (en) * | 2015-12-31 | 2017-07-07 | 上海贝岭股份有限公司 | Reference voltage module |
| CN105759895A (en) * | 2016-05-03 | 2016-07-13 | 成都振芯科技股份有限公司 | Current source circuit with negative temperature coefficient |
| CN110333752A (en) * | 2019-08-06 | 2019-10-15 | 南京微盟电子有限公司 | A kind of firm power linear voltage regulator |
| CN110825155A (en) * | 2019-12-06 | 2020-02-21 | 思瑞浦微电子科技（苏州）股份有限公司 | Zero temperature coefficient reference voltage and current source generating circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: 3PEAKIC MICROELECTRONICS (SUZHOU) CO., LTD. Free format text: FORMER OWNER: SUZHOU 3PEAKIC MICROELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20130201 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130201 Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Patentee after: Scarlett Ruipu microelectronics technology (Suzhou) Co., Ltd. Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Patentee before: 3peakic (Suzhou) Microelectronics Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170414 Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Patentee after: Scarlett Ruipu microelectronics technology (Suzhou) Limited by Share Ltd Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215123 No. 328 Creative Industry Park 2-B304-1 Patentee before: Scarlett Ruipu microelectronics technology (Suzhou) Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120829 |