CN101923366B - CMOS (Complementary Metal-Oxide-Semiconductor) band-gap reference voltage source with fuse correction - Google Patents
CMOS (Complementary Metal-Oxide-Semiconductor) band-gap reference voltage source with fuse correction Download PDFInfo
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Abstract
The invention discloses a CMOS (Complementary Metal-Oxide-Semiconductor) band-gap reference voltage source with fuse correction, which comprises a PTAT current generation circuit, a CTAT current generation circuit, a closed-loop compensating current generation circuit, a fuse correction circuit and an output reference voltage generation circuit, wherein the PTAT current generation circuit is used for generating PTAT current IPTAT in direct proportion to absolute temperature, the CTAT current generation circuit is used for generating CTAT current ICTAT, the closed-loop compensating current generation circuit is used for generating closed-loop compensating current ICL, the fuse correction circuit is used for correcting process offset, and the output reference voltage generation circuit is used for generating a reference voltage source Vref. The PTAT current generation circuit is connected with the CTAT current generation circuit which is connected with the closed-loop compensating current generation circuit, and the output reference voltage generation circuit is respectively connected with the CTAT current generation circuit and the closed-loop compensating current generation circuit. By the CMOS band-gap reference voltage source with fuse correction, the accuracy degree of compensating current is effectively improved, and the temperature stability of output reference voltage is further improved.
Description
Technical field
The present invention relates to power supply and microelectronics technology, particularly a kind of CMOS bandgap voltage reference with the fuse calibration.
Background technology
In general; All there is certain fluctuation in the supply voltage of introducing from chip exterior; And high-precision mimic channel is higher to the stability requirement of bias voltage, therefore, in mimic channel, generally can use a reference voltage source; It can be converted into the voltage with good voltage stability and temperature stability with supply voltage, for other part of circuit provides good reference voltage.
Reference voltage source typically refers to accurate, the stable voltage source that in circuit, is used as voltage reference.Along with the development of continuous increase, the especially system integration technology of integrated circuit scale, reference voltage source becomes on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuits) and the nearly all digital simulator system.
Voltage reference circuit is widely used in high-precision analog circuit and the Digital Analog Hybrid Circuits with the accuracy and the stability of its output reference voltage, for example precision comparator, high-precision A/D and D/A converter, linear voltage regulator, and DC/DC transducer.At A/D and D/A converter, in data acquisition system (DAS) and the various measuring equipment, all need high precision, high stability reference voltage source, and the precision of reference voltage source and stability have determined the whole system operation performance.Voltage-reference mainly contains based on forward V
BEVoltage reference, based on multiple implementations such as the voltage reference of Zener diode reverse breakdown characteristics, bandgap reference voltages; Wherein bandgap voltage reference has advantages such as low-temperature coefficient, high voltage rejection ratio, low reference voltage, thereby has obtained using widely.
A kind of principle of work of traditional CMOS band-gap reference operation source is: the base-emitter voltage V that utilizes bipolar transistor
BE(having negative temperature coefficient) and their difference DELTA V
BE(having positive temperature coefficient (PTC)) compensates each other, thereby the temperature coefficient that reaches circuit is zero purpose.Fig. 1 shows the circuit diagram of the CMOS band-gap reference operation source of this prior art.In Fig. 1, the effect of operational amplifier OTA is to make circuit be in degree of depth negative feedback state, thereby lets operational amplifier OTA two input terminal voltages equate.Therefore, when the stable output of circuit:
I
1R
1+V
BE1＝V
BE2(1)
Vref＝V
BE3+I
3R
2(2)
Since the reference voltage output circuit mirror image electric current of tandem circuit, so electric current I of this reference voltage output circuit
3Satisfy the following relationship formula:
I
1＝I
3(3)
Usually, temperature has bigger influence to the volt-ampere characteristic of diode, and temperature raises, and needed forward bias reduces when keeping diode current constant, that is:
V
BE＝V
Tln(I/Is)(4)
Wherein, V
TThe voltage equivalent of expression temperature, Is is the reverse saturation current of triode.
Can derive further by following formula (1), (2), (3):
I
1＝(V
BE2-V
BE1)/R
1＝V
T/R
1ln(I
1/I
2)(5)
Vref＝V
BE3+R
2/R
1×V
T×ln(I
1/I
2)(6)
Wherein, I
1And I
2Ratio also should be the ratio of the launch site area of triode Q1 and Q2.It is thus clear that on the one hand, two PN junction voltage differences of triode Q1 and Q2 have produced the electric current I that is directly proportional with absolute temperature on resistance R 1
PTATOn the other hand, reference voltage is only relevant with the ratio of the emitter area of the ratio of the forward voltage drop of PN junction, resistance and triode Q1 and Q2, so,, the technology of reality will have very high precision in making.V
BE3Have negative temperature coefficient, when room temperature, be approximately-2mV/ ℃; V
THave positive temperature coefficient, when room temperature, be approximately+0.085mV/ ℃.Through setting suitable working point, can make two sums be issued to zero-temperature coefficient, thereby obtain having the reference voltage of better temperature characterisitic in a certain temperature.Suitably choose R
1And R
2, and the ratio of Q1 and Q2 launch site area can obtain having the reference voltage of zero-temperature coefficient.
But this traditional bandgap voltage reference has only utilized PN junction voltage V
BENegative temperature characteristic and two PN junction voltage difference delta V under the different electric current density
BEPositive temperature coefficient (PTC) compensate each other, make the output voltage reach very low temperature drift, suppressed to a certain extent because the variation of the caused reference voltage of temperature variation.Because V
BENegative temperature coefficient has non-linear, Δ V
BEThe linear positive temperature characterisitic of=KT only can be offset the single order negative temperature coefficient; Therefore in the working environment of reality; The bandgap voltage reference of prior art can't make reference voltage effectively compensated, and can't satisfy the requirement to reference voltage of high-precision analog circuit and Digital Analog Hybrid Circuits.
Summary of the invention
The technical matters that (one) will solve
For the reference voltage not high enough problem of temperature stability under the working environment of reality that solves bandgap voltage reference, fundamental purpose of the present invention is to provide a kind of CMOS bandgap voltage reference with the fuse calibration.
(2) technical scheme
For achieving the above object, the invention provides a kind of CMOS bandgap voltage reference with the fuse calibration, comprising:
The PTAT current generating circuit is used to produce the PTAT electric current I that is directly proportional with absolute temperature
PTAT
The CTAT current generating circuit is used to produce the CTAT electric current I
CTAT
The closed loop compensation current generating circuit is used to produce the closed loop compensation electric current I
CL
The fuse calibration circuit is used for process deviation is calibrated; And
Output reference voltage produces circuit, is used to produce output voltage (Vo);
Wherein, Said PTAT current generating circuit is connected with the CTAT current generating circuit; Said fuse calibration circuit is connected with the closed loop compensation current generating circuit; Said CTAT current generating circuit, closed loop compensation current generating circuit and PTAT current generating circuit three's output is sued for peace by addition, and its summed result is admitted to said output reference voltage and produces circuit, and said output reference voltage produces circuit and also is connected with the closed loop compensation current generating circuit;
Said closed loop compensation current generating circuit converts output voltage (Vo) into electric current and sends into triple-pole type transistor (Q0), combines resistance R 0 to produce offset current then, and two amplifiers connect into negative feedback, guarantees that two output end voltages are identical; Wherein, said reference voltage source comprises: the first transistor (M1) is connected in parallel with transistor seconds (M2), and the drain electrode of the first transistor (M1) is connected in the collector of triple-pole type transistor (Q0), the emitter of triple-pole type transistor (Q0) and the equal ground connection of base stage; The drain electrode of transistor seconds (M2) is through first resistance (R1) ground connection; The positive input terminal of first amplifier is connected in an end of resistance R 0 through the fuse calibration circuit; The other end ground connection of resistance R 0; The negative input end of first amplifier is connected in the drain electrode of the first transistor (M1), and the output terminal of first amplifier is connected in the grid of transistor M0; The negative input end of second amplifier receives output voltage (Vo), and the positive input terminal of second amplifier is connected in the drain electrode of transistor seconds (M2), and through first resistance (R1) ground connection, the output terminal of second amplifier is connected in first, second transistorized grid; The drain electrode of transistor M0 is connected to the positive input terminal and the fuse calibration circuit of first amplifier;
In the production process of offset current, the degree of accuracy of resistance R 0 receives process technology limit, adds the fuse calibration circuit, and fuse calibration circuit and resistance R 0 are connected in series; In the said fuse calibration circuit, d0 is a control end to d8, is connecting fuse between per two control ends; Control end d0 is parallelly connected with resistance R 1 with the fuse between the d1, and control end d1 is parallelly connected with resistance R 2 with the fuse between the d2, and control end d2 is parallelly connected with resistance R 3 with the fuse between the d3; Control end d3 is parallelly connected with resistance R 4 with the fuse between the d4, and control end d4 is parallelly connected with resistance R 5 with the fuse between the d5, and control end d5 is parallelly connected with resistance R 6 with the fuse between the d6; Control end d6 is parallelly connected with resistance R 7 with the fuse between the d7, and control end d7 is parallelly connected with resistance R 8 with the fuse between the d8, and resistance R 1 to R8 is a calibrated resistance; Wherein R1 and R2 resistance are R, and R3 and R4 resistance are 2R, and R5 and R6 resistance are 4R; R7 and R8 resistance are 8R, can come blow out fuse to regulate the size of compensating resistance through any two controls, and range of adjustment is that positive and negative R is to 8R.
In the such scheme, this bandgap voltage reference utilizes output voltage to feed back to the closed loop compensation current generating circuit, and combines the fuse calibration circuit, produces offset current I
CL
In the such scheme, said fuse calibration circuit is connected with the closed loop compensation current generating circuit, and the fuse calibration circuit adopts the method for fuse to the closed loop compensation electric current I
CLCalibrate, produce accurate more offset current.
In the such scheme, the summed result of said PTAT current generating circuit, CTAT current generating circuit and closed loop compensation current generating circuit is admitted to said output reference voltage and produces circuit, is used to produce output voltage (Vo).
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, the CMOS bandgap voltage reference structure of band fuse calibration provided by the invention can improve the degree of accuracy of offset current effectively, and then improves the temperature stability of output reference voltage.
2, the CMOS bandgap voltage reference structure of band fuse calibration provided by the invention; Can adopt standard CMOS process to realize; In various CMOS integrated circuit (like reference voltage chip, electric energy computation chip, voltage adjustment chip, data-switching chip), use easily, have very high practical value.
Description of drawings
Fig. 1 is the circuit theory diagrams of bandgap voltage reference of the single order temperature compensation of prior art;
Fig. 2 is an embodiment of the invention fuse calibration CMOS bandgap voltage reference circuit theory diagrams;
Fig. 3 is a kind of embodiment of the invention closed loop compensation current generating circuit schematic diagram;
Fig. 4 is a kind of embodiment of the invention fuse calibration circuit schematic diagram.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Referring to Fig. 2, the embodiment of the invention provides a kind of fuse calibration CMOS reference voltage source, and this voltage source is on the basis of existing single order temperature compensation bandgap reference voltage source circuit, utilizes PTAT to produce circuit and produces the electric current I that is directly proportional with temperature
PTAT, PTAT produces circuit and is connected in CTAT generation circuit, and CTAT produces circuit and produces electric current I
CTATThis fuse calibration CMOS reference voltage source utilizes output voltage to feed back to the closed loop compensation current generating circuit, and combines the fuse calibration circuit, produces the good offset current I of degree of accuracy
CLWith electric current I
PTAT, I
CTATAnd offset current I
CLSummation produces not temperature variant output item, sends into output reference voltage generation circuit then and produces output voltage.Here, the temperature stability of output voltage depends on offset current I
CLAccuracy, and offset current I
CLAccuracy depend on the degree of accuracy of temperature stability and the fuse calibration circuit calibration of reference voltage Vref.
For reference voltage Vref, if the temperature stability of reference voltage Vref is high more, electric current I
CLAccuracy also just high more; Thereby the stability of the output reference voltage Vref that can produce also will be higher; And then formed a kind of positive feedback, and therefore can be through constantly regulating the parameter of compensating circuit key element, thus very high-precision output reference voltage Vref obtained.But the parameter of key element is when technology realizes in the compensating circuit, because process deviation, its accuracy is limited, therefore adopts the fuse Calibration Method, and the compensate for process deviation improves the precision of offset current, thereby produces the output voltage of high-temperature stability.
The CMOS bandgap voltage reference of the band fuse calibration that the embodiment of the invention provides comprises:
The PTAT current generating circuit is used to produce the PTAT electric current I that is directly proportional with absolute temperature
PTAT
The CTAT current generating circuit is used to produce the CTAT electric current I
CTAT
The closed loop compensation current generating circuit is used to produce the closed loop compensation electric current I
CL
The fuse calibration circuit is used for process deviation is calibrated;
Output reference voltage produces circuit, is used to produce reference voltage source V
Ref
Said PTAT current generating circuit is connected with the CTAT current generating circuit; Said fuse calibration circuit is connected with the closed loop compensation current generating circuit; Said CTAT current generating circuit, closed loop compensation current generating circuit and PTAT current generating circuit summation output; Its result sends into said output reference voltage and produces circuit, and said output reference voltage produces circuit and is connected with the closed loop compensation current generating circuit.
This bandgap voltage reference utilizes output voltage to feed back to the closed loop compensation current generating circuit, and combines the fuse calibration circuit, produces offset current I
CL
Said fuse calibration circuit is connected with the closed loop compensation current generating circuit, and the fuse calibration circuit adopts the method for fuse to the closed loop compensation electric current I
CLCalibrate, produce accurate more offset current.
Said PTAT current generating circuit, CTAT current generating circuit and closed loop compensation current generating circuit are connected successively, the addition of suing for peace, thus produce not temperature variant output item.
The output item of said PTAT current generating circuit, CTAT current generating circuit and closed loop compensation current generating circuit summation addition is sent into said output reference voltage and is produced circuit, is used to produce output reference voltage.
In the present embodiment, the PTAT current generating circuit, the CTAT current generating circuit can adopt conventional PTAT current generating circuit and CTAT current generating circuit respectively, and the associative operation amplifier produces.A kind of realization schematic diagram of closed loop compensation current generating circuit is as shown in Figure 3; Convert output voltage V o into electric current and send into three grades of transistor npn npn Q0; Combine resistance R 0 to produce offset current then, two amplifications connect into negative feedback, guarantee that two output end voltages are identical.
In the production process of offset current, the degree of accuracy of resistance R 0 receives process technology limit, adds the fuse calibration circuit, and a kind of realization schematic diagram of fuse calibration circuit is as shown in Figure 4; D0 is a control end to d8, is connecting fuse between per two control ends, and resistance R 1 to R8 is a calibrated resistance; Wherein R1 and R2 consist of R, and R3 and R4 consist of 2R, and R5 and R6 consist of 4R; R7 and R8 consist of 8R, can come blow out fuse to regulate the size of compensating resistance through any two controls, and range of adjustment is that positive and negative R is to 8R.
The CMOS bandgap voltage reference structure of band fuse calibration provided by the invention can improve the degree of accuracy of offset current effectively, and then improves the temperature stability of output reference voltage; The CMOS bandgap voltage reference structure of band fuse calibration provided by the invention; Can adopt standard CMOS process to realize; In various CMOS integrated circuit (like reference voltage chip, electric energy computation chip, voltage adjustment chip, data-switching chip), use easily, have very high practical value.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the CMOS bandgap voltage reference with the fuse calibration is characterized in that, comprising:
The PTAT current generating circuit is used to produce the PTAT electric current I that is directly proportional with absolute temperature
PTAT
The CTAT current generating circuit is used to produce the CTAT electric current I
CTAT
The closed loop compensation current generating circuit is used to produce the closed loop compensation electric current I
CL
The fuse calibration circuit is used for process deviation is calibrated; And
Output reference voltage produces circuit, is used to produce output voltage (Vo);
Wherein, Said PTAT current generating circuit is connected with the CTAT current generating circuit; Said fuse calibration circuit is connected with the closed loop compensation current generating circuit; Said CTAT current generating circuit, closed loop compensation current generating circuit and PTAT current generating circuit three's output is sued for peace by addition, and its summed result is admitted to said output reference voltage and produces circuit, and said output reference voltage produces circuit and also is connected with the closed loop compensation current generating circuit;
Said closed loop compensation current generating circuit converts output voltage (Vo) into electric current and sends into triple-pole type transistor (Q0), combines resistance R 0 to produce offset current then, and two amplifiers connect into negative feedback, guarantees that two output end voltages are identical; Wherein, said reference voltage source comprises: the first transistor (M1) is connected in parallel with transistor seconds (M2), and the drain electrode of the first transistor (M1) is connected in the collector of triple-pole type transistor (Q0), the emitter of triple-pole type transistor (Q0) and the equal ground connection of base stage; The drain electrode of transistor seconds (M2) is through first resistance (R1) ground connection; The positive input terminal of first amplifier is connected in an end of resistance R 0 through the fuse calibration circuit; The other end ground connection of resistance R 0; The negative input end of first amplifier is connected in the drain electrode of the first transistor (M1), and the output terminal of first amplifier is connected in the grid of transistor M0; The negative input end of second amplifier receives output voltage (Vo), and the positive input terminal of second amplifier is connected in the drain electrode of transistor seconds (M2), and through first resistance (R1) ground connection, the output terminal of second amplifier is connected in first, second transistorized grid; The drain electrode of transistor M0 is connected to the positive input terminal and the fuse calibration circuit of first amplifier;
In the production process of offset current, the degree of accuracy of resistance R 0 receives process technology limit, adds the fuse calibration circuit, and fuse calibration circuit and resistance R 0 are connected in series; In the said fuse calibration circuit, d0 is a control end to d8, is connecting fuse between per two control ends; Control end d0 is parallelly connected with resistance R 1 with the fuse between the d1, and control end d1 is parallelly connected with resistance R 2 with the fuse between the d2, and control end d2 is parallelly connected with resistance R 3 with the fuse between the d3; Control end d3 is parallelly connected with resistance R 4 with the fuse between the d4, and control end d4 is parallelly connected with resistance R 5 with the fuse between the d5, and control end d5 is parallelly connected with resistance R 6 with the fuse between the d6; Control end d6 is parallelly connected with resistance R 7 with the fuse between the d7, and control end d7 is parallelly connected with resistance R 8 with the fuse between the d8, and resistance R 1 to R8 is a calibrated resistance; Wherein R1 and R2 resistance are R, and R3 and R4 resistance are 2R, and R5 and R6 resistance are 4R; R7 and R8 resistance are 8R, can come blow out fuse to regulate the size of compensating resistance through any two controls, and range of adjustment is that positive and negative R is to 8R.
2. the CMOS bandgap voltage reference of band fuse calibration according to claim 1 is characterized in that this bandgap voltage reference utilizes output voltage to feed back to the closed loop compensation current generating circuit, and combines the fuse calibration circuit, produces offset current I
CL
3. the CMOS bandgap voltage reference of band fuse calibration according to claim 1 is characterized in that said fuse calibration circuit is connected with the closed loop compensation current generating circuit, and the fuse calibration circuit adopts the method for fuse to the closed loop compensation electric current I
CLCalibrate, produce accurate more offset current.
4. the CMOS bandgap voltage reference of band fuse calibration according to claim 1; It is characterized in that; The summed result of said PTAT current generating circuit, CTAT current generating circuit and closed loop compensation current generating circuit is admitted to said output reference voltage and produces circuit, is used to produce output voltage (Vo).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9898029B2 (en) | 2015-12-15 | 2018-02-20 | Qualcomm Incorporated | Temperature-compensated reference voltage generator that impresses controlled voltages across resistors |
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| CN103823499A (en) * | 2014-03-03 | 2014-05-28 | 西安华芯半导体有限公司 | Device for automatically adjusting output voltage of linear voltage regulator along with temperature |
| CN107660013B (en) * | 2016-07-26 | 2024-04-05 | 上海莱托思电子科技有限公司 | LED two-end constant-current driving chip and constant-current driving method |
| CN107976261A (en) * | 2017-12-05 | 2018-05-01 | 合肥恒烁半导体有限公司 | A kind of temperature sensing circuit and a kind of temperature checking method |
| EP3680745B1 (en) * | 2019-01-09 | 2022-12-21 | NXP USA, Inc. | Self-biased temperature-compensated zener reference |
| CN112068632B (en) * | 2020-08-31 | 2022-04-26 | 江苏东海半导体科技有限公司 | High-precision voltage reference circuit |
| CN113268099B (en) * | 2021-04-27 | 2021-12-17 | 深圳市至正电子有限责任公司 | Solid-state direct-current voltage reference circuit |
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| CN1596474A (en) * | 2002-02-27 | 2005-03-16 | 株式会社理光 | Circuit for generating a reference voltage having low temperature dependency |
| US6911861B2 (en) * | 2003-08-07 | 2005-06-28 | Texas Instruments Incorporated | Current biasing circuit with temperature compensation and related methods of compensating output current |
| CN1835391A (en) * | 2005-03-18 | 2006-09-20 | 富士通株式会社 | Semiconductor circuit |
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