WO2023213287A1 - Bandgap reference circuit, integrated circuit, and electronic device - Google Patents

Bandgap reference circuit, integrated circuit, and electronic device Download PDF

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Publication number
WO2023213287A1
WO2023213287A1 PCT/CN2023/092190 CN2023092190W WO2023213287A1 WO 2023213287 A1 WO2023213287 A1 WO 2023213287A1 CN 2023092190 W CN2023092190 W CN 2023092190W WO 2023213287 A1 WO2023213287 A1 WO 2023213287A1
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Prior art keywords
bandgap reference
voltage
resistor
circuit
calibration
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PCT/CN2023/092190
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French (fr)
Chinese (zh)
Inventor
杜宇恒
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芯海科技(深圳)股份有限公司
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Publication of WO2023213287A1 publication Critical patent/WO2023213287A1/en

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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

Definitions

  • This application relates to the field of electronic circuit technology, and in particular to bandgap reference circuits, integrated circuits and electronic equipment.
  • the bandgap reference voltage source is one of the basic circuit components in integrated circuits.
  • the bandgap reference voltage source can provide other circuits with an accurate reference voltage that is insensitive to operating temperature, power supply voltage and circuit load. Compared with the external chip power supply, the bandgap reference voltage source has better accuracy and stability, and can effectively reduce the circuit area. Therefore, it has been used in integrated circuit systems such as data converters, power management circuits, and memories. Wide range of applications.
  • the reference voltage output by the bandgap reference voltage source will have a certain deviation, so the bandgap reference voltage source needs to be calibrated.
  • Calibration requires adjustment of the resistor network inside the bandgap reference voltage source. Adjusting the resistor network will affect the temperature drift coefficient of the bandgap reference voltage source. If the temperature drift coefficient changes significantly, it will affect the output of the reference voltage source at different temperatures. The accuracy of the reference voltage has a greater impact. How to reduce the impact of calibration on the temperature drift coefficient of the reference voltage source is one of the technical problems to be solved in this field.
  • exemplary embodiments of the present application provide bandgap reference circuits, integrated circuits and electronic devices, which can effectively reduce the impact of the temperature drift coefficient of the calibration pair.
  • a bandgap reference circuit includes a bandgap reference module and a calibration module.
  • the bandgap reference module is configured to output a bandgap reference voltage.
  • the temperature drift coefficient of the bandgap reference voltage is less than Or equal to the temperature drift threshold;
  • the calibration module is configured to generate a reference current according to the band gap reference voltage and adjust the voltage value of the band gap reference voltage according to the reference current; wherein the current value of the reference current is adjustable.
  • the calibration module includes a reference current unit and a voltage boost unit.
  • the reference current unit is configured to generate a reference current according to the band gap reference voltage, and the current value of the reference current is adjustable.
  • the voltage boost unit is configured to adjust the band gap according to the reference current. The voltage value of the reference voltage.
  • the reference current unit includes a first resistor network, the resistance value of the first resistor network is adjustable, One end of the first resistor network is connected to the first port of the bandgap reference module, and the other end of the first resistor network is connected to the second port of the bandgap reference module, where the first port is the output end of the bandgap reference module; the voltage rises
  • the unit includes a first resistor, a first end of the first resistor is connected to the second port, and a second end of the first resistor is connected to ground.
  • the bandgap reference module includes a positive temperature coefficient generation unit, a negative temperature coefficient generation unit and a calibration unit, the positive temperature coefficient generation unit is configured to generate a positive temperature coefficient voltage; the negative temperature coefficient generation unit and the positive temperature coefficient generation unit is connected and set to generate a negative temperature coefficient voltage; the calibration unit is connected to a positive temperature coefficient generating unit and set to adjust the voltage value of the positive temperature coefficient voltage.
  • the calibration unit includes a second resistor network, the resistance of the second resistor network is adjustable, a first end of the second resistor network is connected to a first port of the bandgap reference module, and a second end of the second resistor network Connected to the positive temperature coefficient generation unit.
  • the positive temperature coefficient generating unit includes a first triode circuit, a second resistor, a third resistor and a comparison circuit; the first terminal of the first triode circuit is connected to the first terminal of the first resistor, The second end of the first triode circuit is connected to the first end of the second resistor, the second end of the second resistor is connected to the first end of the second resistor network, the second end of the second resistor network is connected to the third The first end of the resistor and the second end of the third resistor are connected to the first input end of the comparison circuit, and the second end of the second resistor is also connected to the second input end of the comparison circuit.
  • the negative temperature coefficient generating unit includes a second triode circuit, a first terminal of the second triode circuit is connected to the first terminal of the first resistor, and a second terminal of the second triode circuit is connected to at the first input terminal of the comparison circuit.
  • the minimum voltage adjustment amount by which the first resistor network adjusts the bandgap reference voltage is less than the minimum voltage adjustment amount by which the second resistor network adjusts the bandgap reference voltage.
  • an integrated circuit including any of the above bandgap reference circuits.
  • an electronic device including a device body and an integrated circuit as described above provided in the device body.
  • One or more technical solutions provided in exemplary embodiments of the present application include a bandgap reference module and a calibration module.
  • the calibration module generates a reference current based on the bandgap reference voltage output by the bandgap reference module, and adjusts the bandgap based on the reference current.
  • the voltage value of the reference voltage and the current value of the reference current are adjustable.
  • the bandgap reference circuit of the present application adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module, so that the temperature drift coefficient of the bandgap reference voltage is smaller, and passes an adjustable reference current outside the bandgap reference module through the calibration module.
  • Figure 1 shows a block diagram of a bandgap reference circuit according to an exemplary embodiment of the present application
  • Figure 2 shows a schematic diagram of the principle of a bandgap reference module according to an exemplary embodiment of the present application
  • Figure 3 shows a circuit schematic diagram of another bandgap reference circuit according to an exemplary embodiment of the present application
  • FIG. 4 shows a schematic principle diagram of a first resistor network or a second resistor network according to an exemplary embodiment of the present application.
  • the term “include” and its variations are open-ended, ie, “including but not limited to.”
  • the term “based on” means “based at least in part on.”
  • the term “one embodiment” means “at least one embodiment”; the term “another embodiment”
  • FIG. 1 shows a block diagram of a bandgap reference circuit according to an exemplary embodiment of the present application.
  • the bandgap reference circuit includes a bandgap reference module 1 and a calibration module 2.
  • Bandgap The reference module 1 is configured to output a bandgap reference voltage, and the temperature drift coefficient of the bandgap reference voltage is less than or equal to the temperature drift threshold;
  • the calibration module 2 is configured to generate a reference current based on the bandgap reference voltage and adjust the bandgap reference voltage according to the reference current. voltage value; among them, the current value of the reference current is adjustable.
  • the bandgap reference module 1 may be a traditional bandgap reference source, and the calibration module 2 may be a bandgap reference source. Circuitry external to the reference bandgap reference source.
  • the calibration module 2 may include a load resistor with variable resistance. By adjusting the resistance of the load resistor, an adjustable reference current can be obtained.
  • the calibration module 2 may also include a sampling resistor for sampling the reference current. The voltage across the sampling resistor and the bandgap reference voltage across the load resistor form the adjusted bandgap reference voltage. By adjusting the resistance of the load resistor, the reference current passing through the load resistor can be adjusted, thereby adjusting the voltage at both ends of the sampling resistor, and finally obtaining the adjusted bandgap reference voltage.
  • the bandgap reference circuit in the embodiment of the present invention adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module 1, the temperature drift coefficient of the bandgap reference voltage output by the bandgap reference module 1 is smaller, and then through the bandgap
  • the calibration module 2 outside the reference module 1 calibrates the voltage value of the bandgap reference voltage, thereby effectively reducing the impact of calibration on the temperature drift coefficient of the bandgap reference voltage.
  • the voltage obtained by calibrating the bandgap reference circuit of the present application is both accurate and accurate. And the temperature drift coefficient is smaller.
  • the calibration module 2 includes a reference current unit and a voltage boost unit.
  • the reference current unit is configured to generate a reference current according to the bandgap reference voltage.
  • the current value of the reference current is adjustable; and the voltage boost unit is configured to adjust according to the reference current.
  • the voltage value of the bandgap reference voltage is adjustable.
  • RT1 in the figure is the reference current unit
  • R1 is the voltage boost unit
  • the bandgap reference voltage is loaded on RT1.
  • the reference current passes through R1, changing the voltage across R1.
  • the voltage across R1 and the bandgap reference voltage across RT1 form the adjusted bandgap reference voltage.
  • the reference current unit includes a first resistor network, the resistance value of the first resistor network is adjustable, one end of the first resistor network is connected to the first port of the bandgap reference module 1, and the other end of the first resistor network It is connected to the second port of the bandgap reference module 1, where the first port is the output end of the bandgap reference module 1;
  • the voltage boosting unit includes a first resistor, the first end of the first resistor is connected to the second port, and the first resistor The second terminal is grounded.
  • U 1 is the band gap reference voltage
  • U 2 is the adjusted band gap reference voltage
  • I 1 is the current passing through when the band gap reference voltage is loaded on the first resistor network
  • I 2 is the second resistor of the band gap reference module 1.
  • R1 is the resistance of the first resistor
  • r 1 is the resistance of the first resistor network.
  • adjusting the resistance value of r 1 will affect the temperature drift coefficient of U 1 *(r 1 /R 1 ) part.
  • the temperature drift coefficient of the bandgap reference voltage U 1 output by the bandgap reference module 1 is 0 or very small, so the temperature drift coefficient of the U 1 *(r 1 /R 1 ) part brought by the adjusted resistance r 1
  • the change is very small, so the adjusted resistance r 1 has an effect on the adjusted band gap reference voltage U 2 output by the entire calibration circuit. The impact is minimal.
  • the bandgap reference module 1 includes: a positive temperature coefficient generation unit configured to generate a positive temperature coefficient voltage; a negative temperature coefficient generation unit connected to the positive temperature coefficient generation unit , and is configured to generate a negative temperature coefficient voltage; and a calibration unit, which is connected to the positive temperature coefficient generation unit and is configured to adjust the voltage value of the positive temperature coefficient voltage.
  • the positive temperature coefficient generating unit includes a first triode circuit, a second resistor, a third resistor and a comparison circuit; the first terminal of the first triode circuit is connected to the first terminal of the first resistor, The second end of the first triode circuit is connected to the first end of the second resistor, the second end of the second resistor is connected to the first end of the second resistor network, the second end of the second resistor network is connected to the third The first end of the resistor and the second end of the third resistor are connected to the first input end of the comparison circuit, and the second end of the second resistor is also connected to the second input end of the comparison circuit.
  • the negative temperature coefficient generating unit includes a second triode circuit, a first terminal of the second triode circuit is connected to the first terminal of the first resistor, and a second terminal of the second triode circuit is connected to at the first input terminal of the comparison circuit.
  • the calibration unit includes a second resistor network, the resistance of the second resistor network is adjustable, the first end of the second resistor network is connected to the first port of the bandgap reference module 1 , and the second resistor network has an adjustable resistance.
  • the terminal is connected to the positive temperature coefficient generating unit.
  • FIG. 2 shows a schematic diagram of the principle of a bandgap reference module according to an exemplary embodiment of the present application.
  • the number of triodes in Q1 i.e. the first triode circuit
  • the emitter of each triode in Q1 is connected to the base.
  • the voltage drop is the voltage drop across a PN junction.
  • the number of triodes of Q2 i.e. the second triode circuit
  • the emitter of the triode of Q2 is also connected to the base.
  • the voltage drop of the triode of Q2 is the voltage of a PN junction. drop.
  • Q1 and Q2 can be transistors with the same technical parameters.
  • R2, Q1 and Q2 The function of R2, Q1 and Q2 is to generate PTAT (Proportional To Absolute Temperature, proportional to absolute temperature) current.
  • Q1 and Q2 cooperate with the adjustable resistor (calibration unit) of RT2 and R3 to generate the bandgap reference voltage based on the PTAT current.
  • the temperature coefficient of Q2 in the negative temperature coefficient generating unit is a negative temperature coefficient
  • the second resistor network RT2 in the calibration unit has a positive temperature coefficient. Therefore, it is more complicated to use the second resistor network RT2 to calibrate the bandgap reference voltage in the prior art.
  • the temperature drift coefficient that greatly affects the bandgap reference voltage output by the bandgap reference module 1.
  • FIG. 3 shows a circuit schematic diagram of another bandgap reference circuit according to an exemplary embodiment of the present application.
  • RT2 is a second resistor network with an adjustable resistance. Both the first resistor network RT1 and the second resistor network RT2 can be used for calibration. RT2 can be used to adjust the temperature drift coefficient of the output bandgap reference voltage so that the temperature drift coefficient of the bandgap reference voltage is less than the temperature drift threshold.
  • the minimum voltage adjustment amount of the first resistor network to calibrate the bandgap reference voltage is less than the first resistive network.
  • the resistance of the second resistor network is adjustable, and the minimum change amount of the resistance in the two resistor networks corresponds to the minimum voltage adjustment amount for calibrating the bandgap reference voltage.
  • the approximate calculation formula of the bandgap reference voltage is The approximate formula for calculating the bandgap reference voltage is This formula is a refinement of the above formula, where V1 corresponds to U 1 (bandgap reference voltage) above, V2 corresponds to U 2 (adjusted bandgap reference voltage), and RT1 corresponds to r 1 (first resistor network) , R 1 corresponds to R 1 .
  • VT is the thermal voltage of the triode (each triode in the first triode circuit and the second triode circuit), M is the number of triodes connected in series in the first triode circuit, and Vbe is the The voltage difference between the emitter and base.
  • R2 second resistance
  • R1 first resistance
  • calibrate Partially When calibrating using RT1, calibrate Partially, is a fixed value.
  • the minimum voltage change to calibrate the bandgap reference voltage is equal to Relevant; when calibrating with RT2, calibrate part, is a fixed value, the minimum voltage change value for calibrating the bandgap reference voltage is the same as Related.
  • the minimum change in resistance in the two resistor networks thus corresponds to the minimum voltage adjustment required to calibrate the bandgap reference voltage.
  • the minimum voltage adjustment amount for calibrating the bandgap reference voltage is smaller than the minimum voltage adjustment amount for calibrating the bandgap reference voltage by the second resistor network.
  • the minimum voltage adjustment corresponds to the calibration speed and calibration accuracy.
  • the larger the minimum voltage adjustment the faster the calibration speed and the lower the calibration accuracy.
  • Calibration using the second resistor network has lower accuracy and faster speed (coarse calibration), while calibration using the second resistor network has higher accuracy (fine calibration).
  • the second resistor network can be used for rough calibration first, and then the first resistor network can be used for fine calibration.
  • the second resistor network with a larger calibration range and faster calibration speed can be used for rough adjustment, so that the calibration The error is quickly reduced to a smaller range (corresponding to the coarse-tuned temperature drift threshold range), and then the first resistor network is used for fine-tuning to obtain a smaller calibration error (corresponding to the fine-tuned temperature drift threshold range). Calibrating larger voltage errors takes into account both calibration speed and calibration accuracy.
  • the calibration accuracy corresponding to the first resistor network ie, the minimum voltage adjustment amount required to calibrate the corresponding band gap reference voltage
  • the calibration accuracy of the second resistor network is 10 mV.
  • the bandgap reference voltage is roughly calibrated first by calibrating the second resistor network, so that the output bandgap reference voltage can be compared with the predetermined voltage (in practical applications, it can be compared with the higher-precision
  • the signal output by the bandgap reference module 1 is compared with an error within ⁇ 10mV, and then the bandgap reference voltage is accurately calibrated by adjusting the second resistor network so that the error is within ⁇ 1mV.
  • using a two-stage resistor network for calibration has the advantage of reducing the number of resistors required for higher calibration accuracy and a larger calibration range.
  • the number of resistor networks used for calibration is 1, the voltage range that needs to be covered by the calibration is plus or minus 500mV, the calibration accuracy is 1mV, and the calibration accuracy is 1/1000 of the calibration range. It is usually required to use at least an exponent of 1024(2 times) unit resistors form a resistor network.
  • the second resistor network RT2 is responsible for the calibration range of plus or minus 500mV, and the calibration accuracy is 10mV, then the first resistor network RT1 only needs to use 128 unit resistors to meet the requirements; Assume The second resistor network RT2 is responsible for the calibration range of plus and minus 20mV, and the calibration accuracy is 1mV. Then the first resistor network RT1 only needs 64 unit resistors to meet the requirements. Using two resistor networks to achieve the same calibration accuracy only requires the use of 192 unit resistors, greatly reducing the total number of unit resistors required in the resistor network.
  • the first resistor network includes one or more first circuit segments connected in series and a plurality of first switches. Each segment of the first circuit includes one or more third resistors connected in parallel. Each first switch Set to switch the resistance of the first resistor network; the second resistor network includes one or more second circuits connected in series, and a plurality of second switches, each second circuit including one or more fourth resistors connected in parallel, Each second switch is configured to switch the resistance of the first resistor network.
  • Figure 4 shows a schematic diagram of a first resistor network or a second resistor network according to an exemplary embodiment of the present application.
  • the resistor labels in the resistor network in Figure 4 are all R0, which represents the The various parameters of all resistors included in the resistor network are basically the same, such as the resistance value and the temperature drift coefficient.
  • the resistor network in Figure 4 is divided into multiple sections. The first section includes one R0 resistor, the second section includes two R0 resistors..., each circuit section (the first circuit or the second circuit) can be equipped with a circuit corresponding to this section.
  • a switch connected in parallel (the third switch or the fourth switch), which can switch the resistance of the resistor network (for example, when the switch is closed, all resistors included in this circuit are short-circuited), thereby adjusting the first or second resistor The resistance of the network.
  • the bandgap reference module 1 is a voltage mode bandgap reference circuit or a current mode bandgap reference circuit.
  • an external controller can be used to calibrate the bandgap reference module 1, such as a microcontroller, CPU, etc. Calibration by an external controller compares the bandgap reference voltage to a preset voltage. The preset voltage is provided by the bandgap reference module 1 with high accuracy. The built-in comparator of the external controller compares the input bandgap reference voltage with the preset voltage. If the bandgap reference voltage is greater or less than the preset voltage, the bandgap reference voltage is The first resistor network or the second resistor network in the gap reference circuit is adjusted until the deviation between the band gap reference voltage and the preset voltage is within the temperature drift threshold range.
  • the sequence of calibration may be to use the second resistor network to calibrate the bandgap reference before calibrating using the first resistor network.
  • the temperature drift coefficient of the voltage is calibrated so that the temperature drift coefficient of the bandgap reference voltage is closer to 0 (the temperature drift coefficient is within the third threshold range). In this way, the band gap reference voltage is calibrated, which has less impact on the temperature drift coefficient.
  • the bandgap reference voltage is adjusted by adjusting the resistance of the resistor network.
  • the first resistor network and the second resistor network may be divided into multiple circuit segments. Each circuit segment may include one or more resistors. Each segment of the resistor network may include a switch connected in parallel with this segment of circuit. By controlling whether each switch When closed, the resistance value can be controlled and the bandgap reference voltage can be calibrated.
  • the bandgap reference circuit provided by the embodiment of the present application includes a bandgap reference module 1 and a calibration module 2.
  • the calibration module 2 generates a reference current according to the bandgap reference voltage output by the bandgap reference module 1, and adjusts the bandgap reference voltage according to the reference current.
  • the voltage value and the current value of the reference current are adjustable.
  • the bandgap reference circuit of the present application adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module 1, so that the temperature drift coefficient of the bandgap reference voltage is smaller, and adjusts the temperature drift coefficient outside the bandgap reference module 1 through the calibration module 2.
  • the reference current calibrates the voltage value of the bandgap reference voltage, thereby effectively reducing the impact of calibration on the temperature drift coefficient of the bandgap reference voltage.
  • the voltage obtained by the calibration is both accurate and has a temperature drift coefficient. smaller.
  • an integrated circuit including any of the above bandgap reference circuits.
  • an electronic device including a device body and an integrated circuit as described above provided in the device body.

Abstract

A bandgap reference circuit, an integrated circuit, and an electronic device. The bandgap reference circuit comprises: a bandgap reference module (1), the band gap reference module (1) being configured to output a bandgap reference voltage, and the temperature drift coefficient of the bandgap reference voltage being less than or equal to a temperature drift threshold; and a calibration module (2), the calibration module (2) being configured to adjust the voltage value of the bandgap reference voltage. The voltage value of the bandgap reference voltage is calibrated outside a bandgap reference source, and the bandgap reference source only needs to adjust the temperature drift coefficient of an output voltage, so that the temperature drift coefficient of the output voltage is small. The voltage value is calibrated by an external calibration circuit, and compared with a common method in which it is difficult to consider both the accuracy of voltage value calibration and the temperature drift coefficient by calibrating the voltage value of the bandgap reference voltage inside the bandgap reference source, the voltage obtained by means of calibration is accurate and the temperature drift coefficient is smaller.

Description

带隙基准电路、集成电路和电子设备Bandgap reference circuits, integrated circuits and electronic devices
相关申请的交叉引用Cross-references to related applications
本申请要求于2022年05月05日提交的申请号为202210481095.8的中国申请的优先权,其在此处于所有目的通过引用将其全部内容并入本文。This application claims priority from Chinese application No. 202210481095.8, filed on May 5, 2022, the entire content of which is hereby incorporated by reference for all purposes.
技术领域Technical field
本申请涉及电子电路技术领域,尤其涉及带隙基准电路、集成电路和电子设备。This application relates to the field of electronic circuit technology, and in particular to bandgap reference circuits, integrated circuits and electronic equipment.
背景技术Background technique
带隙基准电压源是集成电路中的基本组成电路之一,带隙基准电压源能为其他电路提供一个对工作温度、电源电压以及电路负载不敏感的精确参考电压。与芯片外置电源相比,带隙基准电压源的精确度及稳定性更佳,而且能有效减少电路面积,因此其在数据转换器、电源管理电路、储存器等集成电路系统中均得到了广泛的应用。The bandgap reference voltage source is one of the basic circuit components in integrated circuits. The bandgap reference voltage source can provide other circuits with an accurate reference voltage that is insensitive to operating temperature, power supply voltage and circuit load. Compared with the external chip power supply, the bandgap reference voltage source has better accuracy and stability, and can effectively reduce the circuit area. Therefore, it has been used in integrated circuit systems such as data converters, power management circuits, and memories. Wide range of applications.
在实际应用中的初始状态下,带隙基准电压源输出的基准电压会有一定的偏差,因而需要对带隙基准电压源进行校准。校准需要对带隙基准电压源内部的电阻网络进行调整,调整电阻网络会影响到带隙基准电压源的温漂系数,若温漂系数发生较大变化会对基准电压源在不同温度下输出的基准电压的准确度造成较大影响。如何减小校准对基准电压源的温漂系数的影响,是本领域内待解决的技术问题之一。In the initial state of actual applications, the reference voltage output by the bandgap reference voltage source will have a certain deviation, so the bandgap reference voltage source needs to be calibrated. Calibration requires adjustment of the resistor network inside the bandgap reference voltage source. Adjusting the resistor network will affect the temperature drift coefficient of the bandgap reference voltage source. If the temperature drift coefficient changes significantly, it will affect the output of the reference voltage source at different temperatures. The accuracy of the reference voltage has a greater impact. How to reduce the impact of calibration on the temperature drift coefficient of the reference voltage source is one of the technical problems to be solved in this field.
发明内容Contents of the invention
有鉴于此,本申请示例性实施例提供了带隙基准电路、集成电路和电子设备,能够有效减小校准对的温漂系数的影响。In view of this, exemplary embodiments of the present application provide bandgap reference circuits, integrated circuits and electronic devices, which can effectively reduce the impact of the temperature drift coefficient of the calibration pair.
根据本申请的一方面,提供了一种带隙基准电路,带隙基准电路包括带隙基准模块以及校准模块,带隙基准模块设置为输出带隙基准电压,带隙基准电压的温漂系数小于或等于温漂阈值;校准模块设置为根据带隙基准电压生成基准电流根据基准电流调整带隙基准电压的电压值;其中,基准电流的电流值可调。According to one aspect of the present application, a bandgap reference circuit is provided. The bandgap reference circuit includes a bandgap reference module and a calibration module. The bandgap reference module is configured to output a bandgap reference voltage. The temperature drift coefficient of the bandgap reference voltage is less than Or equal to the temperature drift threshold; the calibration module is configured to generate a reference current according to the band gap reference voltage and adjust the voltage value of the band gap reference voltage according to the reference current; wherein the current value of the reference current is adjustable.
在一些实施方式中,校准模块包括基准电流单元以及电压抬升单元,基准电流单元设置为根据带隙基准电压生成基准电流,基准电流的电流值可调;电压抬升单元设置为根据基准电流调整带隙基准电压的电压值。In some embodiments, the calibration module includes a reference current unit and a voltage boost unit. The reference current unit is configured to generate a reference current according to the band gap reference voltage, and the current value of the reference current is adjustable. The voltage boost unit is configured to adjust the band gap according to the reference current. The voltage value of the reference voltage.
在一些实施方式中,基准电流单元包括第一电阻网络,第一电阻网络的电阻值可调, 第一电阻网络的一端与带隙基准模块的第一端口连接,第一电阻网络的另一端与带隙基准模块的第二端口连接,其中第一端口为带隙基准模块的输出端;电压抬升单元包括第一电阻,第一电阻的第一端与第二端口连接,第一电阻的第二端接地。In some embodiments, the reference current unit includes a first resistor network, the resistance value of the first resistor network is adjustable, One end of the first resistor network is connected to the first port of the bandgap reference module, and the other end of the first resistor network is connected to the second port of the bandgap reference module, where the first port is the output end of the bandgap reference module; the voltage rises The unit includes a first resistor, a first end of the first resistor is connected to the second port, and a second end of the first resistor is connected to ground.
在一些实施方式中,带隙基准模块包括正温系数生成单元、负温系数生成单元以及校准单元,正温系数生成单元设置为生成正温系数电压;负温系数生成单元与正温系数生成单元连接,且设置为生成负温系数电压;校准单元与正温系数生成单元连接,且设置为调整正温系数电压的电压值。In some embodiments, the bandgap reference module includes a positive temperature coefficient generation unit, a negative temperature coefficient generation unit and a calibration unit, the positive temperature coefficient generation unit is configured to generate a positive temperature coefficient voltage; the negative temperature coefficient generation unit and the positive temperature coefficient generation unit is connected and set to generate a negative temperature coefficient voltage; the calibration unit is connected to a positive temperature coefficient generating unit and set to adjust the voltage value of the positive temperature coefficient voltage.
在一些实施方式中,校准单元包括第二电阻网络,第二电阻网络的电阻可调,第二电阻网络的第一端与带隙基准模块的第一端口连接,第二电阻网络的第二端与正温系数生成单元连接。In some embodiments, the calibration unit includes a second resistor network, the resistance of the second resistor network is adjustable, a first end of the second resistor network is connected to a first port of the bandgap reference module, and a second end of the second resistor network Connected to the positive temperature coefficient generation unit.
在一些实施方式中,正温系数生成单元包括第一三极管电路、第二电阻、第三电阻以及比较电路;第一三级管电路的第一端连接于第一电阻的第一端,第一三级管电路的第二端连接于第二电阻的第一端,第二电阻的第二端连接于第二电阻网络的第一端,第二电阻网络的第二端连接于第三电阻的第一端,第三电阻的第二端连接于比较电路的第一输入端,第二电阻的第二端还连接于比较电路的第二输入端。In some embodiments, the positive temperature coefficient generating unit includes a first triode circuit, a second resistor, a third resistor and a comparison circuit; the first terminal of the first triode circuit is connected to the first terminal of the first resistor, The second end of the first triode circuit is connected to the first end of the second resistor, the second end of the second resistor is connected to the first end of the second resistor network, the second end of the second resistor network is connected to the third The first end of the resistor and the second end of the third resistor are connected to the first input end of the comparison circuit, and the second end of the second resistor is also connected to the second input end of the comparison circuit.
在一些实施方式中,负温系数生成单元包括第二三极管电路,第二三极管电路的第一端连接于第一电阻的第一端,第二三极管电路的第二端连接于比较电路的第一输入端。In some embodiments, the negative temperature coefficient generating unit includes a second triode circuit, a first terminal of the second triode circuit is connected to the first terminal of the first resistor, and a second terminal of the second triode circuit is connected to at the first input terminal of the comparison circuit.
在一些实施方式中,第一电阻网络对带隙基准电压进行调整的最小电压调节量小于第二电阻网络对带隙基准电压进行调整的最小电压调节量。In some embodiments, the minimum voltage adjustment amount by which the first resistor network adjusts the bandgap reference voltage is less than the minimum voltage adjustment amount by which the second resistor network adjusts the bandgap reference voltage.
根据本申请的另一方面,提供了一种集成电路,包括上述任一项的带隙基准电路。According to another aspect of the present application, an integrated circuit is provided, including any of the above bandgap reference circuits.
根据本申请的另一方面,提供了一种电子设备,包括设备主体以及设于设备主体内的如上述集成电路。According to another aspect of the present application, an electronic device is provided, including a device body and an integrated circuit as described above provided in the device body.
本申请示例性实施例中提供的一个或多个技术方案,包括带隙基准模块以及校准模块,该校准模块根据带隙基准模块输出的带隙基准电压生成基准电流,并根据基准电流调整带隙基准电压的电压值,基准电流的电流值可调。本申请的带隙基准电路通过带隙基准模块调整带隙基准电压的温漂系数,使得带隙基准电压的温漂系数较小,并通过校准模块在带隙基准模块外部通过可调的基准电流对带隙基准电压的电压值进行校准,从而有效减小校准对带隙基准电压温漂系数的影响。本申请相对于常见的在带隙基准模块内部对带隙基准电压的电压值进行校准而难以兼顾电压值校准的准确性和温漂系数的方法,其校准得到的电压既准确且温度漂移系数更小。One or more technical solutions provided in exemplary embodiments of the present application include a bandgap reference module and a calibration module. The calibration module generates a reference current based on the bandgap reference voltage output by the bandgap reference module, and adjusts the bandgap based on the reference current. The voltage value of the reference voltage and the current value of the reference current are adjustable. The bandgap reference circuit of the present application adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module, so that the temperature drift coefficient of the bandgap reference voltage is smaller, and passes an adjustable reference current outside the bandgap reference module through the calibration module. Calibrate the voltage value of the bandgap reference voltage, thereby effectively reducing the impact of calibration on the temperature drift coefficient of the bandgap reference voltage. Compared with the common method of calibrating the voltage value of the bandgap reference voltage inside the bandgap reference module, which is difficult to take into account the accuracy of the voltage value calibration and the temperature drift coefficient, the voltage obtained by the calibration is both accurate and the temperature drift coefficient is more accurate. Small.
附图说明 Description of the drawings
在下面结合附图对于示例性实施例的描述中,本申请的更多细节、特征和优点被公开,在附图中:Further details, features and advantages of the present application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawing, in which:
图1示出了根据本申请示例性实施例的一种带隙基准电路的框图;Figure 1 shows a block diagram of a bandgap reference circuit according to an exemplary embodiment of the present application;
图2示出了根据本申请示例性实施例的一种带隙基准模块的原理示意图;Figure 2 shows a schematic diagram of the principle of a bandgap reference module according to an exemplary embodiment of the present application;
图3示出了根据本申请示例性实施例的另一种带隙基准电路的电路原理图;Figure 3 shows a circuit schematic diagram of another bandgap reference circuit according to an exemplary embodiment of the present application;
图4示出了根据本申请示例性实施例的一种第一电阻网络或第二电阻网络的原理示意图。FIG. 4 shows a schematic principle diagram of a first resistor network or a second resistor network according to an exemplary embodiment of the present application.
具体实施方式Detailed ways
下面将参照附图更详细地描述本申请的实施例。虽然附图中显示了本申请的某些实施例,然而应当理解的是,本申请可以通过各种形式来实现,而且不应该被解释为限于这里阐述的实施例,相反提供这些实施例是为了更加透彻和完整地理解本申请。应当理解的是,本申请的附图及实施例仅用于示例性作用,并非用于限制本申请的保护范围。Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather these embodiments are provided for Understand this application more thoroughly and completely. It should be understood that the drawings and embodiments of the present application are for illustrative purposes only and are not intended to limit the scope of protection of the present application.
应当理解,本申请的方法实施方式中记载的各个步骤可以按照不同的顺序执行,和/或并行执行。此外,方法实施方式可以包括附加的步骤和/或省略执行示出的步骤。本申请的范围在此方面不受限制。It should be understood that the various steps described in the method embodiments of the present application can be executed in different orders and/or in parallel. Furthermore, method embodiments may include additional steps and/or omit performance of illustrated steps. The scope of the present application is not limited in this regard.
本文使用的术语“包括”及其变形是开放性包括,即“包括但不限于”。术语“基于”是“至少部分地基于”。术语“一个实施例”表示“至少一个实施例”;术语“另一实施例”As used herein, the term "include" and its variations are open-ended, ie, "including but not limited to." The term "based on" means "based at least in part on." The term "one embodiment" means "at least one embodiment"; the term "another embodiment"
表示“至少一个另外的实施例”;术语“一些实施例”表示“至少一些实施例”。其他术语的相关定义将在下文描述中给出。需要注意,本申请中提及的“第一”、“第二”等概念仅用于对不同的装置、模块或单元进行区分,并非用于限定这些装置、模块或单元所执行的功能的顺序或者相互依存关系。means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions of other terms will be given in the description below. It should be noted that concepts such as “first” and “second” mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units. Or interdependence.
需要注意,本申请中提及的“一个”、“多个”的修饰是示意性而非限制性的,本领域技术人员应当理解,除非在上下文另有明确指出,否则应该理解为“一个或多个”。It should be noted that the modifications of "one" and "multiple" mentioned in this application are illustrative and not restrictive. Those skilled in the art will understand that unless the context clearly indicates otherwise, it should be understood as "one or Multiple”.
本申请实施方式中的多个装置之间所交互的消息或者信息的名称仅用于说明性的目的,而并不是用于对这些消息或信息的范围进行限制。The names of messages or information exchanged between multiple devices in the embodiments of the present application are only for illustrative purposes and are not used to limit the scope of these messages or information.
以下参照附图描述本申请的方案,图1示出了根据本申请示例性实施例的一种带隙基准电路的框图,该带隙基准电路包括带隙基准模块1以及校准模块2,带隙基准模块1设置为输出带隙基准电压,且带隙基准电压的温漂系数小于或等于温漂阈值;校准模块2设置为根据带隙基准电压生成基准电流根据基准电流调整所述带隙基准电压的电压值;其中,基准电流的电流值可调。The solution of the present application is described below with reference to the accompanying drawings. Figure 1 shows a block diagram of a bandgap reference circuit according to an exemplary embodiment of the present application. The bandgap reference circuit includes a bandgap reference module 1 and a calibration module 2. Bandgap The reference module 1 is configured to output a bandgap reference voltage, and the temperature drift coefficient of the bandgap reference voltage is less than or equal to the temperature drift threshold; the calibration module 2 is configured to generate a reference current based on the bandgap reference voltage and adjust the bandgap reference voltage according to the reference current. voltage value; among them, the current value of the reference current is adjustable.
在一些实施方式,带隙基准模块1可以是传统的带隙基准源,校准模块2可以是带隙 基准带隙基准源外部的电路。In some embodiments, the bandgap reference module 1 may be a traditional bandgap reference source, and the calibration module 2 may be a bandgap reference source. Circuitry external to the reference bandgap reference source.
作为一种实施例,校准模块2中可以包括阻值可变的负载电阻,通过调节负载电阻的阻值,得到可调节的基准电流。校准模块2中还可包括采样电阻,用于对基准电流进行采样。采样电阻两端的电压和负载电阻两端的带隙基准电压组成了调节后的带隙基准电压。通过调节负载电阻的阻值,能够对通过负载电阻的基准电流进行调节,进而调节采样电阻两端的电压,最终得到调节后的带隙基准电压。As an embodiment, the calibration module 2 may include a load resistor with variable resistance. By adjusting the resistance of the load resistor, an adjustable reference current can be obtained. The calibration module 2 may also include a sampling resistor for sampling the reference current. The voltage across the sampling resistor and the bandgap reference voltage across the load resistor form the adjusted bandgap reference voltage. By adjusting the resistance of the load resistor, the reference current passing through the load resistor can be adjusted, thereby adjusting the voltage at both ends of the sampling resistor, and finally obtaining the adjusted bandgap reference voltage.
由于本发明申请实施例的带隙基准电路通过带隙基准模块1调整带隙基准电压的温漂系数,使得带隙基准模块1输出的带隙基准电压的温漂系数较小,再通过带隙基准模块1外部的校准模块2对带隙基准电压的电压值进行校准,从而有效减小校准对带隙基准电压温漂系数的影响。相对于常见的在带隙基准模块1内部对带隙基准电压的电压值进行校准,难以兼顾电压值校准的准确性和温漂系数的方法,本申请的带隙基准电路校准得到的电压既准确且温度漂移系数更小。Since the bandgap reference circuit in the embodiment of the present invention adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module 1, the temperature drift coefficient of the bandgap reference voltage output by the bandgap reference module 1 is smaller, and then through the bandgap The calibration module 2 outside the reference module 1 calibrates the voltage value of the bandgap reference voltage, thereby effectively reducing the impact of calibration on the temperature drift coefficient of the bandgap reference voltage. Compared with the common method of calibrating the voltage value of the bandgap reference voltage inside the bandgap reference module 1, which is difficult to take into account the accuracy of the voltage value calibration and the temperature drift coefficient, the voltage obtained by calibrating the bandgap reference circuit of the present application is both accurate and accurate. And the temperature drift coefficient is smaller.
在一些实施方式中,校准模块2包括基准电流单元以及电压抬升单元,基准电流单元设置为根据带隙基准电压生成基准电流,基准电流的电流值可调;,电压抬升单元设置为根据基准电流调整带隙基准电压的电压值。In some embodiments, the calibration module 2 includes a reference current unit and a voltage boost unit. The reference current unit is configured to generate a reference current according to the bandgap reference voltage. The current value of the reference current is adjustable; and the voltage boost unit is configured to adjust according to the reference current. The voltage value of the bandgap reference voltage.
具体地,如图1所示,图中的RT1为基准电流单元,R1为电压抬升单元,带隙基准电压加载在RT1上,通过改变RT1的阻值,可以改变流经RT1的基准电流,改变的基准电流通过R1,改变R1两端的电压。R1两端的电压和RT1两端的带隙基准电压构成了调节后的带隙基准电压。Specifically, as shown in Figure 1, RT1 in the figure is the reference current unit, R1 is the voltage boost unit, and the bandgap reference voltage is loaded on RT1. By changing the resistance of RT1, the reference current flowing through RT1 can be changed. The reference current passes through R1, changing the voltage across R1. The voltage across R1 and the bandgap reference voltage across RT1 form the adjusted bandgap reference voltage.
在一些实施方式中,基准电流单元包括第一电阻网络,第一电阻网络的电阻值可调,第一电阻网络的一端与带隙基准模块1的第一端口连接,第一电阻网络的另一端与带隙基准模块1的第二端口连接,其中第一端口为带隙基准模块1的输出端;电压抬升单元包括第一电阻,第一电阻的第一端与第二端口连接,第一电阻的第二端接地。In some embodiments, the reference current unit includes a first resistor network, the resistance value of the first resistor network is adjustable, one end of the first resistor network is connected to the first port of the bandgap reference module 1, and the other end of the first resistor network It is connected to the second port of the bandgap reference module 1, where the first port is the output end of the bandgap reference module 1; the voltage boosting unit includes a first resistor, the first end of the first resistor is connected to the second port, and the first resistor The second terminal is grounded.
具体地,调节后的带隙基准电压U2可由以下关系式得到:
U2=U1+(I1+I2)*r1=U1+(U1/R1+I2)*r1=U1+U1*(r1/R1)+r1*I2
Specifically, the adjusted bandgap reference voltage U2 can be obtained by the following relationship:
U 2 =U 1 +(I 1 +I 2 )*r 1 =U 1 +(U 1 /R 1 +I 2 )*r 1 =U 1 +U 1 *(r 1 /R 1 )+r 1 *I 2 .
其中,U1为带隙基准电压,U2为调节后的带隙基准电压,I1为带隙基准电压加载在第一电阻网络时通过的电流,I2为带隙基准模块1的第二端口通过第一电阻流向地的电流,R1为第一电阻的阻值,r1为第一电阻网络的阻值。Among them, U 1 is the band gap reference voltage, U 2 is the adjusted band gap reference voltage, I 1 is the current passing through when the band gap reference voltage is loaded on the first resistor network, and I 2 is the second resistor of the band gap reference module 1. The current flowing from the port to the ground through the first resistor, R1 is the resistance of the first resistor, and r 1 is the resistance of the first resistor network.
根据公式,调节r1的阻值会影响U1*(r1/R1)部分的温漂系数。理想情况下带隙基准模块1输出的带隙基准电压U1温漂系数为0或很小,因而调节的阻值r1带来的U1*(r1/R1)部分的温漂系数变化很小,因而调节的阻值r1对整个校准电路输出的调节后的带隙基准电压U2的 影响很小。According to the formula, adjusting the resistance value of r 1 will affect the temperature drift coefficient of U 1 *(r 1 /R 1 ) part. Ideally, the temperature drift coefficient of the bandgap reference voltage U 1 output by the bandgap reference module 1 is 0 or very small, so the temperature drift coefficient of the U 1 *(r 1 /R 1 ) part brought by the adjusted resistance r 1 The change is very small, so the adjusted resistance r 1 has an effect on the adjusted band gap reference voltage U 2 output by the entire calibration circuit. The impact is minimal.
在一些实施方式中,带隙基准模块1包括:正温系数生成单元,正温系数生成单元设置为生成正温系数电压;负温系数生成单元,负温系数生成单元与正温系数生成单元连接,且设置为生成负温系数电压;以及校准单元,校准单元与正温系数生成单元连接,且设置为调整正温系数电压的电压值。In some embodiments, the bandgap reference module 1 includes: a positive temperature coefficient generation unit configured to generate a positive temperature coefficient voltage; a negative temperature coefficient generation unit connected to the positive temperature coefficient generation unit , and is configured to generate a negative temperature coefficient voltage; and a calibration unit, which is connected to the positive temperature coefficient generation unit and is configured to adjust the voltage value of the positive temperature coefficient voltage.
在一些实施方式中,正温系数生成单元包括第一三极管电路、第二电阻、第三电阻以及比较电路;第一三级管电路的第一端连接于第一电阻的第一端,第一三级管电路的第二端连接于第二电阻的第一端,第二电阻的第二端连接于第二电阻网络的第一端,第二电阻网络的第二端连接于第三电阻的第一端,第三电阻的第二端连接于比较电路的第一输入端,第二电阻的第二端还连接于比较电路的第二输入端。In some embodiments, the positive temperature coefficient generating unit includes a first triode circuit, a second resistor, a third resistor and a comparison circuit; the first terminal of the first triode circuit is connected to the first terminal of the first resistor, The second end of the first triode circuit is connected to the first end of the second resistor, the second end of the second resistor is connected to the first end of the second resistor network, the second end of the second resistor network is connected to the third The first end of the resistor and the second end of the third resistor are connected to the first input end of the comparison circuit, and the second end of the second resistor is also connected to the second input end of the comparison circuit.
在一些实施方式中,负温系数生成单元包括第二三极管电路,第二三极管电路的第一端连接于第一电阻的第一端,第二三极管电路的第二端连接于比较电路的第一输入端。In some embodiments, the negative temperature coefficient generating unit includes a second triode circuit, a first terminal of the second triode circuit is connected to the first terminal of the first resistor, and a second terminal of the second triode circuit is connected to at the first input terminal of the comparison circuit.
在一些实施方式中,校准单元包括第二电阻网络,第二电阻网络的电阻可调,第二电阻网络的第一端与带隙基准模块1的第一端口连接,第二电阻网络的第二端与正温系数生成单元连接。In some embodiments, the calibration unit includes a second resistor network, the resistance of the second resistor network is adjustable, the first end of the second resistor network is connected to the first port of the bandgap reference module 1 , and the second resistor network has an adjustable resistance. The terminal is connected to the positive temperature coefficient generating unit.
图2示出了根据本申请示例性实施例的一种带隙基准模块的原理示意图。如图2所示,正温系数生成单元中Q1(即第一三极管电路)的三极管的数量为M个,Q1中每个三极管的发射极与基级连接,Q1每个三级管的压降为一个PN结的压降。同样,负温系数生成单元中Q2(即第二三极管电路)的三极管数量通常为一个,Q2的三极管同样发射极与基级连接,Q2的三级管的压降为一个PN结的压降。Q1和Q2可以是相同技术参数的三极管。R2、Q1和Q2的作用是产生PTAT(Proportional To Absolute Temperature,绝对温度正比)电流,Q1和Q2配合RT2的可调电阻(校准单元)和R3根据PTAT电流产生带隙基准电压。FIG. 2 shows a schematic diagram of the principle of a bandgap reference module according to an exemplary embodiment of the present application. As shown in Figure 2, the number of triodes in Q1 (i.e. the first triode circuit) in the positive temperature coefficient generating unit is M. The emitter of each triode in Q1 is connected to the base. The voltage drop is the voltage drop across a PN junction. Similarly, the number of triodes of Q2 (i.e. the second triode circuit) in the negative temperature coefficient generating unit is usually one. The emitter of the triode of Q2 is also connected to the base. The voltage drop of the triode of Q2 is the voltage of a PN junction. drop. Q1 and Q2 can be transistors with the same technical parameters. The function of R2, Q1 and Q2 is to generate PTAT (Proportional To Absolute Temperature, proportional to absolute temperature) current. Q1 and Q2 cooperate with the adjustable resistor (calibration unit) of RT2 and R3 to generate the bandgap reference voltage based on the PTAT current.
负温系数生成单元中Q2的温度系数为负温度系数,校准单元中的第二电阻网络RT2为正温度系数,因而现有技术中利用第二电阻网络RT2对带隙基准电压进行校准,会较大的影响带隙基准模块1输出的带隙基准电压的温漂系数。The temperature coefficient of Q2 in the negative temperature coefficient generating unit is a negative temperature coefficient, and the second resistor network RT2 in the calibration unit has a positive temperature coefficient. Therefore, it is more complicated to use the second resistor network RT2 to calibrate the bandgap reference voltage in the prior art. The temperature drift coefficient that greatly affects the bandgap reference voltage output by the bandgap reference module 1.
作为一个实施例,图3示出了根据本申请示例性实施例的另一种带隙基准电路的电路原理图。RT2为电阻为阻值可调的第二电阻网络,第一电阻网络RT1和第二电阻网络RT2都能够用于校准。RT2可用于调整输出的带隙基准电压的温漂系数,以使带隙基准电压的温漂系数小于温漂阈值。As an embodiment, FIG. 3 shows a circuit schematic diagram of another bandgap reference circuit according to an exemplary embodiment of the present application. RT2 is a second resistor network with an adjustable resistance. Both the first resistor network RT1 and the second resistor network RT2 can be used for calibration. RT2 can be used to adjust the temperature drift coefficient of the output bandgap reference voltage so that the temperature drift coefficient of the bandgap reference voltage is less than the temperature drift threshold.
在一些实施方式中,第一电阻网络对带隙基准电压进行校准的最小电压调节量小于第 二电阻网络对带隙基准电压进行校准的最小电压调节量。In some embodiments, the minimum voltage adjustment amount of the first resistor network to calibrate the bandgap reference voltage is less than the first resistive network. The minimum voltage adjustment required by a two-resistor network to calibrate the bandgap reference voltage.
具体地,第二电阻网络的电阻可调,两个电阻网络中的电阻的最小变化量与对带隙基准电压进行校准的最小电压调节量相对应。Specifically, the resistance of the second resistor network is adjustable, and the minimum change amount of the resistance in the two resistor networks corresponds to the minimum voltage adjustment amount for calibrating the bandgap reference voltage.
图3中,带隙基准电压的近似计算公式为带隙基准电压的近似计算公式为本公式为对上文中公式的细化,其中V1对应上文中的U1(带隙基准电压),V2对应U2(调节后的带隙基准电压),RT1对应r1(第一电阻网络),R1对应R1。另外,VT为三极管(第一三级管电路和第二三极管电路中每个三极管)的热电压,M为第一三极管电路中相互串联的三极管的个数,Vbe为三极管的发射极与基级之间的电压差。In Figure 3, the approximate calculation formula of the bandgap reference voltage is The approximate formula for calculating the bandgap reference voltage is This formula is a refinement of the above formula, where V1 corresponds to U 1 (bandgap reference voltage) above, V2 corresponds to U 2 (adjusted bandgap reference voltage), and RT1 corresponds to r 1 (first resistor network) , R 1 corresponds to R 1 . In addition, VT is the thermal voltage of the triode (each triode in the first triode circuit and the second triode circuit), M is the number of triodes connected in series in the first triode circuit, and Vbe is the The voltage difference between the emitter and base.
进而, and then,
实际应用中,可以使R2(第二电阻)远大于R1(第一电阻),则 In practical applications, R2 (second resistance) can be made much larger than R1 (first resistance), then
当利用RT1进行校准时,校准部分时,为固定值。对带隙基准电压进行校准的最小电压变化值与相关;当利用RT2进行校准时,校准 部分,为固定值,对带隙基准电压进行校准的最小电压变化值与相关。因而两个电阻网络中的电阻的最小变化量与对带隙基准电压进行校准的最小电压调节量相对应。可以通过对电阻的阻值的配置,使对带隙基准电压进行校准的最小电压调节量小于第二电阻网络对带隙基准电压进行校准的最小电压调节量。When calibrating using RT1, calibrate Partially, is a fixed value. The minimum voltage change to calibrate the bandgap reference voltage is equal to Relevant; when calibrating with RT2, calibrate part, is a fixed value, the minimum voltage change value for calibrating the bandgap reference voltage is the same as Related. The minimum change in resistance in the two resistor networks thus corresponds to the minimum voltage adjustment required to calibrate the bandgap reference voltage. By configuring the resistance value of the resistor, the minimum voltage adjustment amount for calibrating the bandgap reference voltage is smaller than the minimum voltage adjustment amount for calibrating the bandgap reference voltage by the second resistor network.
最小电压调节量对应了校准速度和校准精度。最小电压调节量越大,校准速度越快,校准精度越低。利用第二电阻网络进行校准的精度较低,速度较快(粗校准),用进行校准的精度较高(精校准)。利用本申请实施例的带隙基准电路进行校准,可以先利用第二电阻网络进行粗校准,再利用第一电阻网络进行精校准。当使用这种校准电路进行自动校准的时候,在要求校准范围较大且校准精度较高的情况下,可先使用校准范围较大,校准速度较快的第二电阻网络进行粗调,使得校准误差迅速减小到一个较小的范围内(对应粗调的温漂阈值范围),然后再使用第一电阻网络进行微调,得到较小的校准误差(对应精调的温漂阈值范围)。对较大电压误差进行校准,兼顾了校准速度和校准精度。The minimum voltage adjustment corresponds to the calibration speed and calibration accuracy. The larger the minimum voltage adjustment, the faster the calibration speed and the lower the calibration accuracy. Calibration using the second resistor network has lower accuracy and faster speed (coarse calibration), while calibration using the second resistor network has higher accuracy (fine calibration). When calibrating using the bandgap reference circuit of the embodiment of the present application, the second resistor network can be used for rough calibration first, and then the first resistor network can be used for fine calibration. When using this kind of calibration circuit for automatic calibration, when a larger calibration range and higher calibration accuracy are required, the second resistor network with a larger calibration range and faster calibration speed can be used for rough adjustment, so that the calibration The error is quickly reduced to a smaller range (corresponding to the coarse-tuned temperature drift threshold range), and then the first resistor network is used for fine-tuning to obtain a smaller calibration error (corresponding to the fine-tuned temperature drift threshold range). Calibrating larger voltage errors takes into account both calibration speed and calibration accuracy.
例如,第一电阻网络对应的校准精度(即校准对应带隙基准电压的最小电压调节量)为1mV,第二电阻网络的校准精度为10mV。这样首先通过校准第二电阻网络进行对带隙基准电压粗校准,使得输出的带隙基准电压与预定电压(实际应用时,可以与精度较高的 带隙基准模块1输出的信号相比较)误差在±10mV以内,然后再通过调节第二电阻网络对带隙基准电压进行精校准,使得误差在±1mV以内。For example, the calibration accuracy corresponding to the first resistor network (ie, the minimum voltage adjustment amount required to calibrate the corresponding band gap reference voltage) is 1 mV, and the calibration accuracy of the second resistor network is 10 mV. In this way, the bandgap reference voltage is roughly calibrated first by calibrating the second resistor network, so that the output bandgap reference voltage can be compared with the predetermined voltage (in practical applications, it can be compared with the higher-precision The signal output by the bandgap reference module 1 is compared with an error within ±10mV, and then the bandgap reference voltage is accurately calibrated by adjusting the second resistor network so that the error is within ±1mV.
另外,使用两级电阻网络进行校准的优点是能够减少较高校准精度和较大校准范围所需使用的电阻数量。当用于校准的电阻网络的数量为1个时,校准所需要覆盖的电压范围为正负500mV,校准精度为1mV,校准精度为校准范围的1/1000,通常要求至少使用1024(2的指数倍)个单位电阻构成电阻网络。若使用两个对应不同校准精度的电阻网络,第二电阻网络RT2负责正负500mV的校准范围,而校准精度为10mV,则第一电阻网络RT1只需要使用128个单位电阻便可以满足要求;假设第二电阻网络RT2负责正负20mV的校准范围,校准精度为1mV,则第一电阻网络RT1只需要64个单位电阻便可以满足要求。使用两个电阻网络达到相同的校准精度,只需要使用192个单位电阻,大大地减少了电阻网络所需使用的总的单位电阻的数量。Additionally, using a two-stage resistor network for calibration has the advantage of reducing the number of resistors required for higher calibration accuracy and a larger calibration range. When the number of resistor networks used for calibration is 1, the voltage range that needs to be covered by the calibration is plus or minus 500mV, the calibration accuracy is 1mV, and the calibration accuracy is 1/1000 of the calibration range. It is usually required to use at least an exponent of 1024(2 times) unit resistors form a resistor network. If two resistor networks corresponding to different calibration accuracy are used, the second resistor network RT2 is responsible for the calibration range of plus or minus 500mV, and the calibration accuracy is 10mV, then the first resistor network RT1 only needs to use 128 unit resistors to meet the requirements; Assume The second resistor network RT2 is responsible for the calibration range of plus and minus 20mV, and the calibration accuracy is 1mV. Then the first resistor network RT1 only needs 64 unit resistors to meet the requirements. Using two resistor networks to achieve the same calibration accuracy only requires the use of 192 unit resistors, greatly reducing the total number of unit resistors required in the resistor network.
在一些实施方式中,第一电阻网络包括一段或多段相互串联的第一电路,以及多个第一开关,每段第一电路包括一个或多个相互并联的第三电阻,每个第一开关设置为切换第一电阻网络的阻值;第二电阻网络包括一段或多段相互串联的第二电路,以及多个第二开关,每段第二电路包括一个或多个相互并联的第四电阻,每个第二开关设置为切换第一电阻网络的阻值。In some embodiments, the first resistor network includes one or more first circuit segments connected in series and a plurality of first switches. Each segment of the first circuit includes one or more third resistors connected in parallel. Each first switch Set to switch the resistance of the first resistor network; the second resistor network includes one or more second circuits connected in series, and a plurality of second switches, each second circuit including one or more fourth resistors connected in parallel, Each second switch is configured to switch the resistance of the first resistor network.
作为一个实施例,图4示出了根据本申请示例性实施例的一种第一电阻网络或第二电阻网络的原理示意图,图4中电阻网络中的电阻标号都为R0,代表图4中的电阻网络中包含的所有电阻的各种参数基本相同,例如阻值基本相同,温漂系数基本相同。图4中的电阻网络分为多段,第一段包括一个R0电阻,第二段包括两个R0电阻...,每段电路(第一电路或第二电路)可以配有一个与这段电路相并联的开关(第三开关或第四开关),该开关可以切换电阻网络的阻值(例如当开关闭合时,这段电路中包含的所有电阻被短路),进而调整第一或第二电阻网络的阻值。As an embodiment, Figure 4 shows a schematic diagram of a first resistor network or a second resistor network according to an exemplary embodiment of the present application. The resistor labels in the resistor network in Figure 4 are all R0, which represents the The various parameters of all resistors included in the resistor network are basically the same, such as the resistance value and the temperature drift coefficient. The resistor network in Figure 4 is divided into multiple sections. The first section includes one R0 resistor, the second section includes two R0 resistors..., each circuit section (the first circuit or the second circuit) can be equipped with a circuit corresponding to this section. A switch connected in parallel (the third switch or the fourth switch), which can switch the resistance of the resistor network (for example, when the switch is closed, all resistors included in this circuit are short-circuited), thereby adjusting the first or second resistor The resistance of the network.
在一些实施方式中,带隙基准模块1为电压模式带隙基准电路或电流模式带隙基准电路。In some embodiments, the bandgap reference module 1 is a voltage mode bandgap reference circuit or a current mode bandgap reference circuit.
实际应用中,可以使用外部控制器对带隙基准模块1进行校准,例如单片机、CPU等。外部控制器进行校准可以将带隙基准电压与预设电压进行比较。预设电压由精度较高的带隙基准模块1提供,外部控制器内置比较器将输入的带隙基准电压和预设电压进行比较,若带隙基准电压大于或小于预设电压,则对带隙基准电路中的第一电阻网络或者第二电阻网络进行调节,直到带隙基准电压与预设电压的偏差在温漂阈值范围。In practical applications, an external controller can be used to calibrate the bandgap reference module 1, such as a microcontroller, CPU, etc. Calibration by an external controller compares the bandgap reference voltage to a preset voltage. The preset voltage is provided by the bandgap reference module 1 with high accuracy. The built-in comparator of the external controller compares the input bandgap reference voltage with the preset voltage. If the bandgap reference voltage is greater or less than the preset voltage, the bandgap reference voltage is The first resistor network or the second resistor network in the gap reference circuit is adjusted until the deviation between the band gap reference voltage and the preset voltage is within the temperature drift threshold range.
校准的次序可以是在利用第一电阻网络进行校准之前,利用第二电阻网络对带隙基准 电压的温度漂移系数进行校准,使得带隙基准电压的温度漂移系数更接近0(温漂系数在第三阈值范围内)。这样利用对带隙基准电压进行校准,对温漂系数的影响更小。或者是先利用第一电阻网络进行粗调,然后再利用第二电阻网络进行精调。The sequence of calibration may be to use the second resistor network to calibrate the bandgap reference before calibrating using the first resistor network. The temperature drift coefficient of the voltage is calibrated so that the temperature drift coefficient of the bandgap reference voltage is closer to 0 (the temperature drift coefficient is within the third threshold range). In this way, the band gap reference voltage is calibrated, which has less impact on the temperature drift coefficient. Or first use the first resistor network for rough adjustment, and then use the second resistor network for fine adjustment.
如上文所述,通过调整的电阻网络的阻值来调整带隙基准电压。第一电阻网络和第二电阻网络可为分为多段电路,每段电路包括一个或多个电阻,电阻网络的每段电路可包括一个与这段电路相并联的开关,通过控制每个开关是否闭合,可以对的电阻值进行控制,进而对带隙基准电压进行校准。As mentioned above, the bandgap reference voltage is adjusted by adjusting the resistance of the resistor network. The first resistor network and the second resistor network may be divided into multiple circuit segments. Each circuit segment may include one or more resistors. Each segment of the resistor network may include a switch connected in parallel with this segment of circuit. By controlling whether each switch When closed, the resistance value can be controlled and the bandgap reference voltage can be calibrated.
本申请实施例提供的带隙基准电路包括带隙基准模块1以及校准模块2,该校准模块2根据带隙基准模块1输出的带隙基准电压生成基准电流,并根据基准电流调整带隙基准电压的电压值,基准电流的电流值可调。本申请的带隙基准电路通过带隙基准模块1调整带隙基准电压的温漂系数,使得带隙基准电压的温漂系数较小,并通过校准模块2在带隙基准模块1外部通过可调的基准电流对带隙基准电压的电压值进行校准,从而有效减小校准对带隙基准电压温漂系数的影响。本申请相对于常见的在带隙基准模块1内部对带隙基准电压的电压值进行校准而难以兼顾电压值校准的准确性和温漂系数的方法,其校准得到的电压既准确且温度漂移系数更小。The bandgap reference circuit provided by the embodiment of the present application includes a bandgap reference module 1 and a calibration module 2. The calibration module 2 generates a reference current according to the bandgap reference voltage output by the bandgap reference module 1, and adjusts the bandgap reference voltage according to the reference current. The voltage value and the current value of the reference current are adjustable. The bandgap reference circuit of the present application adjusts the temperature drift coefficient of the bandgap reference voltage through the bandgap reference module 1, so that the temperature drift coefficient of the bandgap reference voltage is smaller, and adjusts the temperature drift coefficient outside the bandgap reference module 1 through the calibration module 2. The reference current calibrates the voltage value of the bandgap reference voltage, thereby effectively reducing the impact of calibration on the temperature drift coefficient of the bandgap reference voltage. Compared with the common method of calibrating the voltage value of the bandgap reference voltage inside the bandgap reference module 1, which is difficult to take into account the accuracy of the voltage value calibration and the temperature drift coefficient, the voltage obtained by the calibration is both accurate and has a temperature drift coefficient. smaller.
根据本申请的另一方面,提供了一种集成电路,包括上述任一项的带隙基准电路。According to another aspect of the present application, an integrated circuit is provided, including any of the above bandgap reference circuits.
根据本申请的另一方面,提供了一种电子设备,包括设备主体以及设于设备主体内的如上述集成电路。According to another aspect of the present application, an electronic device is provided, including a device body and an integrated circuit as described above provided in the device body.
以上对本申请所提供带隙基准电路、集成电路和电子设备进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的一般技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。 The above is a detailed introduction to the bandgap reference circuit, integrated circuit and electronic equipment provided by this application. Specific examples are used in this article to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand this application. The method and its core idea; at the same time, for those of ordinary skill in the field, there will be changes in the specific implementation and application scope based on the ideas of this application. In summary, the contents of this specification should not be understood as Limitations on this Application.

Claims (10)

  1. 一种带隙基准电路,其中,所述带隙基准电路包括:A bandgap reference circuit, wherein the bandgap reference circuit includes:
    带隙基准模块,所述带隙基准模块设置为输出带隙基准电压,所述带隙基准电压的温漂系数小于或等于温漂阈值;以及a bandgap reference module, the bandgap reference module is configured to output a bandgap reference voltage, the temperature drift coefficient of the bandgap reference voltage is less than or equal to the temperature drift threshold; and
    校准模块,所述校准模块设置为根据所述带隙基准电压生成基准电流,并根据所述基准电流调整所述带隙基准电压的电压值;其中,所述基准电流的电流值可调。Calibration module, the calibration module is configured to generate a reference current according to the bandgap reference voltage, and adjust the voltage value of the bandgap reference voltage according to the reference current; wherein the current value of the reference current is adjustable.
  2. 根据权利要求1所述的带隙基准电路,其中,所述校准模块包括:The bandgap reference circuit according to claim 1, wherein the calibration module includes:
    基准电流单元,所述基准电流单元设置为根据所述带隙基准电压生成基准电流;以及a reference current unit configured to generate a reference current based on the bandgap reference voltage; and
    电压抬升单元,所述电压抬升单元设置为根据所述基准电流调整所述带隙基准电压的电压值。and a voltage boosting unit configured to adjust the voltage value of the bandgap reference voltage according to the reference current.
  3. 根据权利要求2所述的带隙基准电路,其中,所述基准电流单元包括第一电阻网络,所述第一电阻网络的电阻值可调,所述第一电阻网络的一端与所述带隙基准模块的第一端口连接,所述第一电阻网络的另一端与所述带隙基准模块的第二端口连接,其中所述第一端口为所述带隙基准模块的输出端;The bandgap reference circuit according to claim 2, wherein the reference current unit includes a first resistor network, the resistance value of the first resistor network is adjustable, and one end of the first resistor network is connected to the bandgap The first port of the reference module is connected, and the other end of the first resistor network is connected to the second port of the bandgap reference module, where the first port is the output end of the bandgap reference module;
    所述电压抬升单元包括第一电阻,所述第一电阻的第一端与所述第二端口连接,所述第一电阻的第二端接地。The voltage boosting unit includes a first resistor, a first end of the first resistor is connected to the second port, and a second end of the first resistor is connected to ground.
  4. 根据权利要求1-3任一项所述的带隙基准电路,其中,所述带隙基准模块包括:The bandgap reference circuit according to any one of claims 1-3, wherein the bandgap reference module includes:
    正温系数生成单元,所述正温系数生成单元设置为生成正温系数电压;a positive temperature coefficient generating unit, the positive temperature coefficient generating unit is configured to generate a positive temperature coefficient voltage;
    负温系数生成单元,所述负温系数生成单元与所述正温系数生成单元连接,且设置为生成负温系数电压;以及a negative temperature coefficient generating unit, the negative temperature coefficient generating unit is connected to the positive temperature coefficient generating unit and is configured to generate a negative temperature coefficient voltage; and
    校准单元,所述校准单元与所述正温系数生成单元连接,且设置为调整所述正温系数电压的电压值。A calibration unit, the calibration unit is connected to the positive temperature coefficient generating unit and is configured to adjust the voltage value of the positive temperature coefficient voltage.
  5. 根据权利要求4所述的带隙基准电路,其中,所述校准单元包括第二电阻网络,所述第二电阻网络的电阻可调,所述第二电阻网络的第一端与所述带隙基准模块的第一端口连接,所述第二电阻网络的第二端与所述正温系数生成单元连接。The bandgap reference circuit according to claim 4, wherein the calibration unit includes a second resistor network, the resistance of the second resistor network is adjustable, and the first end of the second resistor network is connected to the bandgap The first port of the reference module is connected, and the second end of the second resistance network is connected to the positive temperature coefficient generating unit.
  6. 根据权利要求4或5任一项所述的带隙基准电路,其中,所述正温系数生成单元包括第一三极管电路、第二电阻、第三电阻以及比较电路;The bandgap reference circuit according to any one of claims 4 or 5, wherein the positive temperature coefficient generating unit includes a first transistor circuit, a second resistor, a third resistor and a comparison circuit;
    所述第一三级管电路的第一端连接于第一电阻的第一端,所述第一三级管电路的第二端连接于所述第二电阻的第一端,所述第二电阻的第二端连接于第二电阻网络的第一端,所述第二电阻网络的第二端连接于所述第三电阻的第一端,所述第三电阻的第二端连接于 所述比较电路的第一输入端,所述第二电阻的第二端还连接于所述比较电路的第二输入端。The first end of the first triode circuit is connected to the first end of the first resistor, the second end of the first triode circuit is connected to the first end of the second resistor, and the second The second end of the resistor is connected to the first end of the second resistor network, the second end of the second resistor network is connected to the first end of the third resistor, and the second end of the third resistor is connected to The first input terminal of the comparison circuit and the second terminal of the second resistor are also connected to the second input terminal of the comparison circuit.
  7. 根据权利要求4-6任一项所述的带隙基准电路,其中,所述负温系数生成单元包括第二三极管电路,所述第二三极管电路的第一端连接于第一电阻的第一端,所述第二三极管电路的第二端连接于比较电路的第一输入端。The bandgap reference circuit according to any one of claims 4 to 6, wherein the negative temperature coefficient generating unit includes a second triode circuit, the first end of the second triode circuit is connected to the first The first end of the resistor and the second end of the second transistor circuit are connected to the first input end of the comparison circuit.
  8. 根据权利要求5所述的带隙基准电路,其中,所述第一电阻网络对所述带隙基准电压进行调整的最小电压调节量小于所述第二电阻网络对所述带隙基准电压进行调整的最小电压调节量。The bandgap reference circuit of claim 5 , wherein the first resistor network adjusts the bandgap reference voltage by a minimum voltage adjustment amount less than the second resistor network adjusts the bandgap reference voltage. the minimum voltage adjustment amount.
  9. 一种集成电路,其中,包括权利要求1-8任一项所述的带隙基准电路。An integrated circuit, comprising the bandgap reference circuit according to any one of claims 1-8.
  10. 一种电子设备,其中,包括设备主体以及设于所述设备主体内的如上述权利要求9所述的集成电路。 An electronic device, which includes a device main body and an integrated circuit as claimed in claim 9 provided in the device main body.
PCT/CN2023/092190 2022-05-05 2023-05-05 Bandgap reference circuit, integrated circuit, and electronic device WO2023213287A1 (en)

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