CN105867511A - Sectional temperature compensation circuit - Google Patents
Sectional temperature compensation circuit Download PDFInfo
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- CN105867511A CN105867511A CN201610494424.7A CN201610494424A CN105867511A CN 105867511 A CN105867511 A CN 105867511A CN 201610494424 A CN201610494424 A CN 201610494424A CN 105867511 A CN105867511 A CN 105867511A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- Automation & Control Theory (AREA)
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Abstract
The invention belongs to electronic circuit technologies, and particularly relates to a sectional temperature compensation circuit which comprises a constant-current module, an over-temperature trigger module and a current source module with positive temperature coefficients. Constant currents can flow through load under the effect of the constant-current module; the over-temperature trigger module is connected with the current source module with the positive temperature coefficients, the current source module with the positive temperature coefficients can be switched on under the control of the over-temperature trigger module, and currents of the current source module with the positive temperature coefficients are controlled by the over-temperature trigger module; an output end of the current source module is connected with an inverted input end of the constant-current module, and compensation currents can be outputted from the output end of the current source module. The sectional temperature compensation circuit has the advantages that voltages of input power sources of chips can rise, the temperatures of the chips can be increased, the chips cannot be immediately switched off, voltages on a resistor Rs are linearly reduced, current values are decreased, and accordingly power consumption and the temperatures of the chips can be further reduced; the different temperature coefficients are adopted in different temperature ranges, accordingly, the temperature application ranges of the chips can be expanded, and the load and devices can be effectively protected.
Description
Technical field
The invention belongs to electronic circuit technology, particularly relate to a kind of Segmented temperature compensation circuit.
Background technology
Generally for preventing chip to lose efficacy because of heating burnout, the most all can possess temperature compensation function, once exceed
By by the way of linear reduction operating current during design temperature, maintain it to work on and reduce temperature.Existing temperature is mended
Repaying and mostly be full temperature compensation, i.e. use same penalty coefficient in whole temperature range, this makes applied environment limited, it is impossible to full
The requirement of some special applications of foot.
Therefore, for the circuit of constant-current driving, there is Segmented temperature compensation circuit and can regulate circuit well
Power consumption and protection drive circuit, can apply in a variety of contexts.
Summary of the invention
The purpose of the present invention, it is simply that propose a kind of Segmented temperature compensation circuit.
Technical solution of the present invention: a kind of Segmented temperature compensation circuit, including constant flow module, excess temperature trigger module and positive temperature system
Number current source module；
Described constant flow module is made up of error amplifier EA, the first NMOS tube NM1, resistance Rs and RF；Wherein, error is amplified
The termination reference potential Vref of input in the same direction of device EA, reverse input end connects the source electrode of the first NMOS tube NM1 through resistance RF, and error is put
The grid level of output termination first NMOS tube NM1 of big device EA；The source electrode of the first NMOS tube NM1 pass through resistance Rs ground connection, first
The drain electrode of NMOS tube NM1 connects load；
Described excess temperature trigger module is by the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th electricity
Resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4, the 5th PMOS
PM5 and the 6th PMOS PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by the 3rd resistance R3, the three or three pole
The base stage of pipe Q3 is by ground connection after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by power supply by the 5th resistance R5, the
The grounded emitter of three audion Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid is followed by electricity by the 5th resistance R5
Source, the drain electrode of the 5th PMOS PM5 is by ground connection after the 9th resistance R9；5th drain electrode of PMOS PM5 and the company of the 9th resistance R9
Contact connects the first enable signal；The base stage of the 4th audion Q4 is followed by power supply by the 6th resistance R6, the base of the 4th audion Q4
Pole is by ground connection after the 7th resistance R7, and the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, the 4th audion
The grounded emitter of Q4；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8, and the 6th
The drain electrode of PMOS PM6 is by ground connection after the tenth resistance R10；The junction point of the 6th PMOS PM6 drain electrode and the tenth resistance R10 connects
Second enables signal；
Described positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3,
Four PMOS PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the second audion
Q2, the first resistance R1 and the second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid meets the 4th PMOS
The drain electrode of pipe PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd PMOS
The source electrode of PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply, its grid
Connect the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the grid of the second NMOS tube NM2 and
Drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and colelctor electrode
Ground connection；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects the first PMOS
The drain electrode of PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3, the 4th NMOS tube by the first resistance R1
The grid of NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by the second resistance R2；Two or three pole
The emitter stage of pipe Q2 connects the source electrode of the 4th NMOS tube NM4,；The base stage of the second audion Q2 and grounded collector；3rd PMOS
The drain electrode of PM3 is the outfan of positive temperature coefficient current source module.
The invention have the benefit that chip input supply voltage raises, chip temperature increases, and chip will not close immediately
Disconnected, but by the voltage on linear reduction resistance Rs, reduce current value, and then reduce chip power-consumption and temperature；And not
Use different temperatures coefficient in synthermal scope, improve the chip subject range to temperature further, preferably protect
Load and device.
Accompanying drawing explanation
It it is a kind of Segmented temperature compensation circuit of the present invention shown in Fig. 1；
It it is excess temperature trigger module shown in Fig. 2；
It it is positive temperature coefficient current source shown in Fig. 3；
It it is a kind of Segmented temperature compensation circuit integrated circuit figure shown in Fig. 4；
It is that a kind of Segmented temperature compensation circuit output current varies with temperature curve synoptic diagram shown in Fig. 5.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, technical scheme is described in detail:
As it is shown in figure 1, be a kind of Segmented temperature compensation circuit of the present invention, including constant flow module, excess temperature trigger module and
Positive temperature coefficient current source module；Wherein, constant flow module makes to flow through the current constant of load；Excess temperature trigger module connects positive temperature coefficient
Current source module, controls it and opens and size of current；The inverting input end of the output termination constant flow module of current source module, makees
Compensate electric current；
Described constant flow module is made up of error amplifier EA, driving pipe NM1, resistance Rs and RF；Wherein, error amplifier EA
Input in the same direction termination reference potential Vref, reverse input end through resistance RF connect drive pipe NM1 source electrode, output termination drive pipe
Grid level；The source electrode driving pipe NM1 receives ground GND by resistance Rs, and drain electrode connects load.
Embodiment
As in figure 2 it is shown, this example middle temperature trigger module is by the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance
R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4,
Five PMOS PM5 and the 6th PMOS PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by the 3rd resistance R3,
The base stage of the 3rd audion Q3 is by ground connection after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by by the 5th resistance R5
Power supply, the grounded emitter of the 3rd audion Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid passes through the 5th resistance R5
Being followed by power supply, the drain electrode of the 5th PMOS PM5 is by ground connection after the 9th resistance R9；5th drain electrode of PMOS PM5 and the 9th resistance
The junction point of R9 connects the first enable signal；The base stage of the 4th audion Q4 is followed by power supply by the 6th resistance R6, the 4th audion
The base stage of Q4 is by ground connection after the 7th resistance R7, and the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, and the 4th
The grounded emitter of audion Q4；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8,
The drain electrode of the 6th PMOS PM6 is by ground connection after the tenth resistance R10；6th drain electrode of PMOS PM6 and the connection of the tenth resistance R10
Point connects the second enable signal；
In this example positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3,
4th PMOS PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the two or three pole
Pipe Q2, the first resistance R1 and the second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid connects the 4th
The drain electrode of PMOS PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd
The source electrode of PMOS PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply,
Its grid connects the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the second NMOS tube NM2
Grid and drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and
Grounded collector；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects first
The drain electrode of PMOS PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3 by the first resistance R1, and the 4th
The grid of NMOS tube NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by the second resistance R2；The
The emitter stage of two audion Q2 connects the source electrode of the 4th NMOS tube NM4,；The base stage of the second audion Q2 and grounded collector；3rd
The drain electrode of PMOS PM3 is the outfan of positive temperature coefficient current source module.
The operation principle of this example is:
When chip temperature is less than T1 within normal range, now in excess temperature trigger module, Q3 is off state, PM5 grid
The highest and turn off, output the first enable signal EN1 is low level, and current source module PM4 is opened, and PM1, PM2 and PM3 all close
Disconnected, output electric current is zero.Electric current on RF is zero, and the voltage on Rs is Vref, and size of current isChip is normal
Work, electric current is setting value.
When temperature increases above T1, in excess temperature trigger module, the base emitter voltage of Q3 is less than the electricity on R4
Pressure, now Q3 conducting, PM5 grid voltage is low, and PM5 turns on, and EN1 voltage is that VDD, PM4 turn off, and positive temperature coefficient current module is opened
Beginning work.Before temperature does not rise to T2, Q4 is off, and PM6 grid is that eminence exports low electricity in off state, EN2
Position, NM4 turns off, in R2 resistance access circuit.The output of current sourceThen the voltage on Rs is Vs=
Vref-Iout*RF, output electric current isBecause Δ Vbe is positive temperature coefficient, then may be used
To obtain exporting electric current I with temperature linearity decline.
When temperature increases above T2, in the middle of excess temperature trigger module, the base-emitter voltage of Q4 is decreased below on R7
Voltage, Q4 turn on, PM6 grid voltage be low and conducting, output second enable signal EN2 be high level.EN2 is that height makes NM4
Conducting, R2 is shorted.Now current source outputThen the voltage on Rs is
Output electric currentBigger relative to before T2 with temperature coefficient, i.e. meet in temperature higher
Time electric current decline speed faster.
When temperature rises to T3, having reached safety range, now current reduction is zero, turns off chip module, load
Quit work.
Claims (1)
1. a Segmented temperature compensation circuit, including constant flow module, excess temperature trigger module and positive temperature coefficient current source module；
Described constant flow module is made up of error amplifier EA, the first NMOS tube NM1, the 11st resistance Rs and the 12nd resistance RF；
Wherein, the termination reference potential Vref of input in the same direction of error amplifier EA, reverse input end connects first through the 12nd resistance RF
The source electrode of NMOS tube NM1, the grid level of output termination first NMOS tube NM1 of error amplifier EA；The source electrode of the first NMOS tube NM1
By the 11st resistance Rs ground connection, the drain electrode of the first NMOS tube NM1 connects load；
Described excess temperature trigger module by the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7,
8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4, the 5th PMOS PM5 and
Six PMOS PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by the 3rd resistance R3, the 3rd audion Q3's
Base stage is by ground connection after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by power supply by the 5th resistance R5, the three or three pole
The grounded emitter of pipe Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid is followed by power supply by the 5th resistance R5, and the 5th
The drain electrode of PMOS PM5 is by ground connection after the 9th resistance R9；5th PMOS PM5 drain electrode and the junction point of the 9th resistance R9 connect the
One enables signal；The base stage of the 4th audion Q4 is followed by power supply by the 6th resistance R6, and the base stage of the 4th audion Q4 is by the
Ground connection after seven resistance R7, the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, the transmitting of the 4th audion Q4
Pole ground connection；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8, the 6th PMOS PM6
Drain electrode is by ground connection after the tenth resistance R10；The junction point of the 6th PMOS PM6 drain electrode and the tenth resistance R10 connects the second enable letter
Number；
Described positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3, the 4th
PMOS PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the second audion
Q2, the first resistance R1 and the second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid meets the 4th PMOS
The drain electrode of pipe PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd PMOS
The source electrode of PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply, its grid
Connect the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the grid of the second NMOS tube NM2 and
Drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and colelctor electrode
Ground connection；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects the first PMOS
The drain electrode of PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3, the 4th NMOS tube by the first resistance R1
The grid of NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by the second resistance R2；Two or three pole
The emitter stage of pipe Q2 connects the source electrode of the 4th NMOS tube NM4,；The base stage of the second audion Q2 and grounded collector；3rd PMOS
The drain electrode of PM3 is the outfan of positive temperature coefficient current source module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494424.7A CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494424.7A CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
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| CN105867511A true CN105867511A (en) | 2016-08-17 |
| CN105867511B CN105867511B (en) | 2017-03-15 |
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| CN201610494424.7A Expired - Fee Related CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106455230A (en) * | 2016-11-18 | 2017-02-22 | 贵州恒芯微电子科技有限公司 | Linear constant-current power source having sectional temperature compensation function |
| CN108306258A (en) * | 2018-04-04 | 2018-07-20 | 奥然生物科技（上海）有限公司 | A kind of excess temperature detection circuit and thermal-shutdown circuit for heater |
| CN110333752A (en) * | 2019-08-06 | 2019-10-15 | 南京微盟电子有限公司 | A kind of firm power linear voltage regulator |
| WO2019237247A1 (en) | 2018-06-12 | 2019-12-19 | Boe Technology Group Co., Ltd. | A circuit for providing a temperature-dependent common electrode voltage |
| CN111736651A (en) * | 2020-05-26 | 2020-10-02 | 中国电子科技集团公司第四十三研究所 | Temperature compensation constant current source circuit and temperature compensation method |
| CN112003614A (en) * | 2020-08-27 | 2020-11-27 | 中国电子科技集团公司第五十八研究所 | DDS output compensation circuit |
| CN114265467A (en) * | 2021-12-17 | 2022-04-01 | 贵州振华风光半导体股份有限公司 | Over-temperature protection and enabling control circuit |
| CN116505925A (en) * | 2023-03-21 | 2023-07-28 | 湖南芯易德科技有限公司 | Low-power-consumption power-on and power-off reset circuit with temperature compensation function and reset device |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106455230A (en) * | 2016-11-18 | 2017-02-22 | 贵州恒芯微电子科技有限公司 | Linear constant-current power source having sectional temperature compensation function |
| CN108306258A (en) * | 2018-04-04 | 2018-07-20 | 奥然生物科技（上海）有限公司 | A kind of excess temperature detection circuit and thermal-shutdown circuit for heater |
| CN108306258B (en) * | 2018-04-04 | 2023-12-29 | 奥然生物科技（上海）有限公司 | Over-temperature detection circuit and over-temperature protection circuit for heater |
| WO2019237247A1 (en) | 2018-06-12 | 2019-12-19 | Boe Technology Group Co., Ltd. | A circuit for providing a temperature-dependent common electrode voltage |
| US11308906B2 (en) | 2018-06-12 | 2022-04-19 | Chongqing Boe Optoelectronics Technology Co., Ltd. | Circuit for providing a temperature-dependent common electrode voltage |
| CN110333752A (en) * | 2019-08-06 | 2019-10-15 | 南京微盟电子有限公司 | A kind of firm power linear voltage regulator |
| CN111736651A (en) * | 2020-05-26 | 2020-10-02 | 中国电子科技集团公司第四十三研究所 | Temperature compensation constant current source circuit and temperature compensation method |
| CN112003614A (en) * | 2020-08-27 | 2020-11-27 | 中国电子科技集团公司第五十八研究所 | DDS output compensation circuit |
| CN112003614B (en) * | 2020-08-27 | 2022-08-02 | 中国电子科技集团公司第五十八研究所 | DDS output compensation circuit |
| CN114265467A (en) * | 2021-12-17 | 2022-04-01 | 贵州振华风光半导体股份有限公司 | Over-temperature protection and enabling control circuit |
| CN116505925A (en) * | 2023-03-21 | 2023-07-28 | 湖南芯易德科技有限公司 | Low-power-consumption power-on and power-off reset circuit with temperature compensation function and reset device |
| CN116505925B (en) * | 2023-03-21 | 2024-02-02 | 湖南芯易德科技有限公司 | Low-power-consumption power-on and power-off reset circuit with temperature compensation function and reset device |
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| Publication number | Publication date |
|---|---|
| CN105867511B (en) | 2017-03-15 |
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