CN1812097A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN1812097A CN1812097A CN 200510006692 CN200510006692A CN1812097A CN 1812097 A CN1812097 A CN 1812097A CN 200510006692 CN200510006692 CN 200510006692 CN 200510006692 A CN200510006692 A CN 200510006692A CN 1812097 A CN1812097 A CN 1812097A
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- semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
A kind of semiconductor device is consisted with power transistor T1, controlling transistor T2, constant current CRD and semiconductor thermistor Rt. Semiconductor thermistor Rt and constant current CRD are connected in series and introduce to outer electrical source through fan-out of power transistor T1. Their connecting ends connect to controlling end of controlling transistor T2. Two fan-outs of controlling transistor T2 connect to controlling end of power transistor T1 and ground respectively. During the temperature of power transistor T1 rise to limiting value, the resistance of semiconductor thermistor Rt rise along, the electric current of constant current CRD keeps unchanged. It makes the electric potential of controlling transistor T2 rise till being switched into conduction. Finally, it makes the electric potential of power transistor T1 falls and avoids power transistor T1 damaging. The operating mode of power transistor T1 is free from other elements when power transistor T1 is not switched into conduction.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly power transistor device and control its power output when overheated, reduce its thermal runaway and the infringement that causes in overload; A kind of power transistor semiconductor device of automatic overtemperature protection.
Background technology
Semiconductor power device, as bipolar power transistor, power field effect pipe etc., they the overheated and final device failure that therefore causes that causes because of a variety of causes occurs in actual use through regular meeting.To planting situation, general designer can take two kinds of measures: the one, on its peripheral electric appliance circuits, increase overheating protection circuit, and another kind is to adopt the power device (IPD, IPM) with intelligent protection function.Under present circumstances, adopt these two kinds of methods all can increase user's cost, the particularly a kind of method in back than the highland, cost is higher, has reduced cost performance of product; Preceding a kind of method then need increase the number of peripheral cell, also can improve user's cost and the probability that fault takes place simultaneously.
In addition, the generation of the overheated situation of semiconductor transistor power device can be by multiple former thereby produce, as device overload, out of control, thermal resistance variation etc.At this, we find the overheated comprehensive factor that becomes a device failure of power device, be one must solution problem.Solving problem overheated in the power device applications process how simply, at low cost, is a problem that is worth deepening continuously and researchs and solves.
Summary of the invention
So; the present invention is in view of above-mentioned problem and development and Design; its solution is in transistor power device; semiconductor temperature sensitive member and simple semiconductor control element especially are set on the chip substrate of its making; reach the variations in temperature of sensing device rapidly; the power output of timely control device, the purpose of protection device.
To achieve these goals, semiconductor device of the present invention is characterized in that forming the semiconductor thermistor Rt of its variations in temperature of reflection on the chip substrate that power transistor T1 forms; One constant flow element CRD, an oxide-semiconductor control transistors T2.External power source is introduced by the output of power transistor T1 in semiconductor thermistor Rt and constant flow element CRD series connection back, its electric current flow through a semiconductor thermistor Rt and a constant flow element CRD, semiconductor thermistor Rt and constant flow element CRD link are transfused to the oxide-semiconductor control transistors T2 of another setting, the control end and the output of the final power controlling transistor T 1 of the output of oxide-semiconductor control transistors T2.The control principle of semiconductor device of the present invention as shown in Figure 1.As shown in the figure, when power transistor T1 for various reasons, its temperature rises in the process of a certain limiting value, because the thermal coupling of semiconductor thermistor Rt and power transistor T1 is fine, the resistance of semiconductor thermistor Rt can change simultaneously thereupon, the change in voltage of one end can be input to the input of oxide-semiconductor control transistors T2 immediately, and make its conducting, the output of oxide-semiconductor control transistors T2 is owing to be connected on control end and the ground end of power transistor T1, oxide-semiconductor control transistors T2 can reduce the operating voltage of power transistor T1 control end effectively under the situation of conducting, thereby limited the output current of power transistor T1, protected power transistor T1; When power transistor T1 temperature reduced, same reason oxide-semiconductor control transistors T2 final plant closure, oxide-semiconductor control transistors T2 were under the situation of not conducting, to the not influence of working condition of power transistor T1.So where necessary, device just can play the self-protection effect effectively.
Semiconductor device of the present invention, an end that it is characterized in that its described constant flow element CRD is connected with semiconductor thermistor Rt, their two ends in addition link to each other with external power by two external connection end of power transistor T1, and their joining is connected with the control end of oxide-semiconductor control transistors T2; The two ends in addition of oxide-semiconductor control transistors T2 connect control end and the output of power transistor T2 respectively.As shown in Figure 1.
Semiconductor device of the present invention, its described power transistor T1 can be a bipolar power transistor.
Semiconductor device of the present invention, its described power transistor T1 can be the fet power transistor.
Semiconductor device of the present invention, its described constant flow element CRD is made of field-effect transistor.
Semiconductor device of the present invention, its described temperature sensitive member semiconductor thermistor Rt can be the semiconductor resistor of positive temperature coefficient.
Semiconductor device of the present invention, its described temperature sensitive member semiconductor thermistor Rt can be the semiconductor resistor of negative temperature coefficient.
Semiconductor device of the present invention, its described oxide-semiconductor control transistors T2 can be a field-effect transistor.
Semiconductor device of the present invention, its described oxide-semiconductor control transistors T2 can be a bipolar transistor.
Semiconductor device of the present invention, the mode of its realization are above-mentioned required element can be integrated in on the chip piece.
Semiconductor device of the present invention, the mode of its realization are the separate piece of above-mentioned required element can be integrated in the device.
Semiconductor device of the present invention, the mode of its realization are the combining form of above-mentioned dual mode can be realized.
By the setting of above device of the present invention and the employing of concrete technical parameter, we can be with few internal components and low cost of manufacture, and producing the periphery with overheat protective function is the power transistor semiconductor device of three ends.On this device application also with other general semiconductor power transistor compatibility, can reduce user cost effectively, improve the product price ratio.
Description of drawings
The electric schematic circuit that Fig. 1 semiconductor device of the present invention is realized.
Another schematic diagram of electric scheme circuit that Fig. 2 semiconductor device of the present invention is realized.
The cross-sectional view of Fig. 3 semiconductor device of the present invention.
Another constitutes schematic diagram Fig. 4 semiconductor device of the present invention.
The cross-sectional view of Fig. 5 power transistor T1.
The cross-sectional view of Fig. 6 oxide-semiconductor control transistors T2.
The cross-sectional view of Fig. 7 constant flow element CRD.
The cross-sectional view of Fig. 8 semiconductor thermistor Rt.
The winding diagram of Fig. 9 constant flow element CRD.
The transfer characteristic figure of Figure 10 N channel depletion type metal-oxide-semiconductor.
The output characteristics figure of Figure 11 constant flow element CRD.
The temperature characterisitic table of Figure 12 semiconductor thermistor Rt.
Another winding diagram of electric scheme circuit that Figure 13 device of the present invention is realized.
Embodiment
Below in conjunction with accompanying drawing embodiment is illustrated.
Embodiment 1
This is one required element is integrated in embodiment on the chip piece, as shown in Figure 3.
We are the profile of the MOS fet power transistor T 1 shown in Fig. 5 at first.MOS fet power transistor T 1 is common VDMOS tubular construction at this, and G, D, S are respectively its grid, drain electrode, source electrode, and 14 is chip N type substrates among the figure, and 13 is N
-Type semiconductor layer, 12 and 11 is respectively the P and the N semiconductor layer of twice diffusion technology formation, the 10th, silicon dioxide layer, 15 is metal electrode, 18 is lead-out wire.
The profile of oxide-semiconductor control transistors T2 as shown in Figure 6,24 is N type layer substrate, 23 is N
-Type layer 22 is P type traps making on 23,21 and 26 is respectively S end and the D end of the N semiconductor layer T2 of diffusion technology formation, 20 is silicon dioxide, 25 is the aluminium electrode, 28 is lead-out wire, here T2 is a plane N channel enhancement MOS transistor, it and above-mentioned MOS fet power transistor T 1 process compatible
Constant flow element CRD is made of N channel depletion type field-effect transistor.
The section of structure of constant flow element CRD as shown in Figure 7, it is also made on N type semiconductor substrate 34 bases, 33 is N among the figure
-The type layer, the 32nd, P type trap is made the depletion-type mos transistor of a N raceway groove on this basis, and 30 is silicon dioxide, and 35 is the aluminium electrode, and 36 is depletion layer, and 38 is lead-out wire, and the transfer characteristic of its work is as shown in figure 10.In the drawings as can be seen, work as V
GSBe zero to be transistor G end and S I when holding short circuit
DSOutput is just arranged.We it can also be seen that at constant flow element CRD at V from Figure 11
BOI in the scope
DSBe constant current output.This current value of setting constant flow element be a steady state value very easily.
Can form the two ends constant current device with dissimilar field effect transistor with distinct methods.In the existing finished product constant current device, there is technotron to be made into, the current regulator diode that also useful MOS field-effect transistor is made into, they can be used for this example.Constant flow element is represented with CRD.
It is very useful at this that CRD has several characteristics: it has higher puncture voltage V
BO, be generally 30 to 100 volts: it has the motional impedance of broad, the definition of motional impedance be the operating voltage variable quantity with constant current ratio, when electric current hour can reach several megaohms; It has temperature characterisitic preferably, if choose suitable current, also can obtain the constant current of very little temperature coefficient.
Fig. 8 is the profile of semiconductor thermistor Rt in the device present embodiment, and it is that the N type of making on P type trap injects resistance, the semiconductor body resistance with positive temperature coefficient, and promptly its resistance becomes big with the rising of temperature.44 is N type layer substrate among the figure, and 43 is N
-The type layer, the 42nd, a P type trap of on 43, making, 41 thermistors for semiconductor body resistive layer formation, 40 is silicon dioxide, and 45 is the aluminium electrode, and 48 is lead-out wire.
Semiconductor resistor is very common device in the silicon manufacturing process.Its temperature coefficient with mix concentration and process conditions all have direct relation.In order to reach parameter request preferably, mixing concentration is C=10 in this example
16/ centimetre
3, and the method that adopts ion to inject is made.Injecting resistance has higher precision, generally in 5%.The resistance of resistance is 150 ohm in this example, and its temperature characterisitic as shown in figure 12.
Above Fig. 5, Fig. 6, the described element of Fig. 7, Fig. 8 are produced on the same chip, and as shown in Figure 3, present embodiment is selected most convenient and economic example.01,02 should be T1 shown in Figure 5 relatively among the figure, and 03 should be T2 shown in Figure 6 relatively, and 04 should be CRD shown in Figure 7 relatively, and 05 should be Rt shown in Figure 8 relatively, and 07 is N type layer substrate, and 06 is N
-The type layer, 08 is silicon dioxide, and 09 is the aluminium electrode, and 10 are lead-in wire.
At this, we can find out from the electrical schematic diagram of Fig. 1: establish power transistor T1 because unknown cause causes the silicon substrate temperature to raise, T1 rises to the process of high temperature (as 150 degrees centigrade) from normal temperature, the Rt resistance has risen to 500 ohm by 150 ohm, the electric current of flowing through does not simultaneously become 0.6 milliampere (constant current) substantially, the control end of T2 rises to 3 volts by 0.9 volt in other words, and the Open valve voltage of T2 is 3 volts.When the T2 conducting, the control end of power transistor T1 is forced to drag down current potential immediately, reduces power output, can avoid the damage of power transistor T1.
When not conducting of T2, the work of power transistor T1 is not subjected to the influence of other element.
When semiconductor power transistor controlled temperature value was provided with, different manufacturers was different, and what have is arranged on 135 degrees centigrade, and what have is arranged on 155 degrees centigrade.In this scope, constitutive characteristic of the present invention is enough to design satisfactory product.
Embodiment 2
Fig. 4 is the making schematic diagram of the embodiment of the invention.
For cooperating the in use required parameters requirement of present embodiment of the present invention easily, feature of the present invention comprises: device shown in Figure 3 is partitioned into each independent devices, as Fig. 5, Fig. 6, Fig. 7, shown in Figure 8, and with the semiconductor device components of select parameter, integrated again being encapsulated within the same device made finished product.
In the present embodiment, power transistor T1 is produced on semiconductor thermistor Rt, understand favourable and mutual thermal coupling like this, and will be according to the required parameter request of embodiment, requirement as described in example 1 above, select oxide-semiconductor control transistors T2 and constant flow element CRD form with conductive wire welding back encapsulation each other.84 is N type layer substrate among the figure, and 83 is N
-The type layer, 82 and 81 is respectively the P and the N semiconductor layer of twice diffusion technology formation, 86 thermistor Rt for semiconductor body resistive layer formation, 87 is N
-A P type trap of making on the type layer, 80 is silicon dioxide, and 85 is the aluminium electrode, and 88 is lead-out wire, and T2 is an oxide-semiconductor control transistors, CRD is a constant flow element.
At this, in the characteristic range of the present invention as can be seen, the various forms of semiconductor element combinations of above-mentioned device are all in protection scope of the present invention.
Semiconductor thermistor Rt also can be made into the semiconductor resistor of negative temperature coefficient in implementation process of the present invention, so its method of attachment in enforcement of the present invention as shown in Figure 13.About the making of the semiconductor resistor of negative temperature coefficient, as the semiconductor resistor of PIP (Positive-Intrinsic-Positive) and NIN type negative temperature coefficient, can be with reference to interrelated data.
In feature of the present invention, the power supply of constant flow element CRD and semiconductor thermistor Rt is to bring in access by the output of power transistor T1, and therefore, this power supply also can be introduced by drain D and the source S of power transistor T1, and connection as shown in figure 13.R1 is a dropping resistor among the figure, and it is to mix the higher semiconductor resistor of concentration, and its temperature coefficient is very little with respect to the Rt temperature coefficient, and R2 is the electric current limiting resistance, and T1 is bipolar gated transistor (IGBT).
Obviously.The invention is not restricted to the foregoing description, the various modifications and changes of being done all within the scope of the present invention.
Claims (11)
1. semiconductor device is characterized in that possessing:
Semiconductor power transistor T1, a field effect oxide-semiconductor control transistors T2, semiconductor thermistor Rt, the constant flow element CRD that a transistor field effect transistor is formed by connecting.
2. semiconductor device according to claim 1 is characterized in that: power transistor T1 comprises field-effect transistor.
3. semiconductor device according to claim 1 is characterized in that: power transistor T1 comprises bipolar transistor.
4. semiconductor device according to claim 1, it is characterized in that: oxide-semiconductor control transistors T2 comprises field-effect transistor.
5. semiconductor device according to claim 1, it is characterized in that: oxide-semiconductor control transistors T2 comprises bipolar transistor.
6. semiconductor device according to claim 1 is characterized in that: semiconductor thermistor Rt is the positive temperature coefficient semiconductor resistor.
7. semiconductor device according to claim 1 is characterized in that: semiconductor thermistor Rt is a negative temperature coefficient semiconductor resistance.
8. semiconductor device according to claim 1 is characterized in that: semiconductor thermistor Rt and constant current device CRD are connected into a current circuit; Their link links to each other with the control end of oxide-semiconductor control transistors T2, and their two ends in addition are connected with external power by the two ends of power transistor T1.The two ends of power transistor T1 are respectively grid and source class or drain electrode and source electrode; Correspondingly they also can be base stage and emitter or collector and emitter.
9. semiconductor device according to claim 1 is characterized in that: two outputs of oxide-semiconductor control transistors T2 connect control end and the output of power transistor T1 respectively.
10. semiconductor device according to claim 1, it is characterized in that: affiliated semiconductor power transistor T 1, oxide-semiconductor control transistors field effect transistor T2, semiconductor thermistor Rt, the constant flow element CRD that the transistor field effect transistor is formed by connecting is produced on on the semi-conductive substrate.
11. semiconductor device according to claim 1 is characterized in that: affiliated semiconductor power transistor T 1, oxide-semiconductor control transistors T2, semiconductor thermistor Rt, the constant flow element CRD that field-effect transistor is formed by connecting is discrete component or composition element, is produced on among the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510006692 CN1812097A (en) | 2005-01-27 | 2005-01-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510006692 CN1812097A (en) | 2005-01-27 | 2005-01-27 | Semiconductor device |
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| CN1812097A true CN1812097A (en) | 2006-08-02 |
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|---|---|---|---|
| CN 200510006692 Pending CN1812097A (en) | 2005-01-27 | 2005-01-27 | Semiconductor device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101504557B (en) * | 2008-09-25 | 2011-11-09 | 数能科技股份有限公司 | Constant current element construction in tandem connection, and circuit employing the same |
| CN101814911B (en) * | 2008-07-07 | 2013-12-04 | 英飞凌科技股份有限公司 | Semiconductor component and method of determining temperature |
| CN103811491A (en) * | 2014-02-26 | 2014-05-21 | 江阴新顺微电子有限公司 | Adjustable constant current source integrated chip and manufacturing method |
| CN106249800A (en) * | 2016-09-22 | 2016-12-21 | 苏州佳世达电通有限公司 | Overheating protection circuit and there is the electronic installation of overheat protective function |
-
2005
- 2005-01-27 CN CN 200510006692 patent/CN1812097A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814911B (en) * | 2008-07-07 | 2013-12-04 | 英飞凌科技股份有限公司 | Semiconductor component and method of determining temperature |
| CN101504557B (en) * | 2008-09-25 | 2011-11-09 | 数能科技股份有限公司 | Constant current element construction in tandem connection, and circuit employing the same |
| CN103811491A (en) * | 2014-02-26 | 2014-05-21 | 江阴新顺微电子有限公司 | Adjustable constant current source integrated chip and manufacturing method |
| CN103811491B (en) * | 2014-02-26 | 2016-04-27 | 江阴新顺微电子有限公司 | A kind of tabilized current power supply integrated chip and manufacture method |
| CN106249800A (en) * | 2016-09-22 | 2016-12-21 | 苏州佳世达电通有限公司 | Overheating protection circuit and there is the electronic installation of overheat protective function |
| CN106249800B (en) * | 2016-09-22 | 2017-11-07 | 苏州佳世达电通有限公司 | Overheating protection circuit and the electronic installation with overheat protective function |
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