CN202383549U

CN202383549U - Single-chip ultrahigh voltage constant current circuit

Info

Publication number: CN202383549U
Application number: CN2011205508337U
Authority: CN
Inventors: 朱月林
Original assignee: Individual
Current assignee: Individual
Priority date: 2011-12-26
Filing date: 2011-12-26
Publication date: 2012-08-15
Anticipated expiration: 2021-12-26

Abstract

The utility model provides a single-chip ultrahigh voltage constant current circuit. The single-chip ultrahigh voltage constant current circuit comprises a high-voltage N-type DMOS (double-diffusion metal-oxide-semiconductor) tube, a BJT (bipolar junction transistor) triode, a first resistor having two ends respectively connected with a grid electrode and a drain electrode of the high-voltage N-type DMOS tube, a second resistor having two ends respectively connected with a source electrode of the high-voltage N-type DMOS tube and a base electrode of the BJT triode, a third resistor having two ends respectively connected with the source electrode of the high-voltage N-type DMOS tube and an emitting electrode of the BJT triode, and a voltage-stabilizing diode having the cathode connected with a collector of the BJT triode, and an anode connected with the emitting electrode of the BJT triode, the grid of the high-voltage N-type DMOS tube is connected with the collector of the BJT triode. The single-chip ultrahigh voltage constant current circuit provided by the utility model has simple circuit structure; by adopting the mixed integrated circuit technology of double pole of the single-chip, the CMOS (complementary metal-oxide semiconductor) and high-voltage DMOS, the withstand voltage at the current constant end is up to 700 volt, and completely meets various electric supply application schemes.

Description

Single-chip UHV (ultra-high voltage) constant-current circuit

Technical field

The utility model relates to integrated circuit fields, relates in particular to a kind of integrated UHV (ultra-high voltage) constant-current circuit of single-chip of making bipolar, CMOS and DMOS device that is based on the same chip.

Background technology

In mimic channel, need stable reference current be provided for various amplifiers, as the basis that guarantees the circuit steady operation, this reference current is a DC quantity, the relation of it and power supply and technological parameter is very little, has constant-current characteristics.This constant-current circuit with constant-current characteristics, in mimic channel usually as biasing circuit and as the active load of amplifier.

Fig. 1 is the circuit structure diagram of existing a kind of basic constant-current circuit.It is characterized in that using integrated transporting discharging; Have high precision, the output terminal of integrated transporting discharging is done unidirectional dc constant current power supply after connecting dual-polar triode, during work; Input voltage Vref equates that with constant current terminal voltage VA output current and VA are proportional: output current=Vref/ floats earth resistance.The shortcoming of constant-current circuit shown in Figure 1 is: circuit structure is complicated; The withstand voltage of constant current end VA is limited by the ultimate value of bipolar technology, and is withstand voltage less than 100 volts.Because the factor of technology discreteness and circuit structure needs IS end outer meeting resistance adjustment constant current value size, is unfavorable for that high volume applications is in the production automation.

In recent years, under altitude figure trend, variation, current capacity and the protection for voltage becomes more and more important digital IC technology in the scaled back of technology, and different IC needs different supply voltage, and the status of constant-current circuit is more and more important.When output improved, the performance of portable product also constantly was improved, and function constantly increases.The upgrading of portable type electronic product must make it that constant-current circuit is proposed higher requirement.

The utility model content

Above-mentioned defective to existing constant-current circuit; The applicant improves through research; Design provides a kind of single-chip UHV (ultra-high voltage) constant-current circuit; Its circuit structure is simple, adopts bipolar, the CMOS and the high pressure DMOS hybrid-intergated-circuit technique of single-chip, when realizing constant current, has reached the withstand voltage of superelevation.

The technical scheme of the utility model is following:

The utility model provides a kind of single-chip UHV (ultra-high voltage) constant-current circuit; Said circuit comprises the 3rd resistance that second resistance that first resistance that a high-pressure N-shaped DMOS pipe, BJT triode, two ends are connected with drain electrode with the grid of said high-pressure N-shaped DMOS pipe respectively, two ends are connected with the base stage of the source electrode of said high-pressure N-shaped DMOS pipe and BJT triode respectively, two ends are connected with the emitter of the source electrode of said high-pressure N-shaped DMOS pipe and BJT triode respectively; And the voltage stabilizing diode that negative electrode is connected with the collector of said BJT triode, anode is connected with the emitter of said BJT triode, the grid of said high-pressure N-shaped DMOS pipe is connected with the collector of BJT triode.

Its further technical scheme is:

Said first resistance is high-tension resistive.

Said the 3rd resistance is the adjustable resistance revised of resistance.

Said high-pressure N-shaped DMOS pipe adopts DMOS technology to make.

Said voltage stabilizing diode adopts CMOS technology to make.

Said BJT triode adopts bipolar technology to make.

And its further technical scheme is:

Said circuit package is a two-terminal device, and two terminals are respectively the drain electrode of high-pressure N-shaped DMOS pipe and the emitter of BJT triode.

Perhaps: said circuit package is a three terminal device, and three terminals are respectively the drain electrode of high-pressure N-shaped DMOS pipe, the source electrode of high-pressure N-shaped DMOS pipe and the emitter of BJT triode.

The useful technique effect of the utility model is:

(1), the circuit structure of the utility model is simple, omitted voltage comparator and internal reference source.Only use several components and parts promptly to realize the constant current scheme, improved the reliability of integrated circuit.

(2), the utility model adopts bipolar, the CMOS and the high pressure DMOS hybrid-intergated-circuit technique of single-chip.The high pressure DMOS that designs in structure pipe N1 has realized that constant current end VA is withstand voltage and has been higher than 350 volts, reaches as high as 700 volts, satisfies various civil power application schemes fully.

(3), the utility model being provided with can be revised resistance R 3; Generate the resistance amendment scheme during through computer testing; Can conveniently realize the customization of constant current value, correct the device constant current value that the technology discreteness brings and significantly squinted, satisfy the coherence request of industrial mass production.

(4), the utility model can be packaged into three terminal device, is parallel to resistance R 3 through outer meeting resistance, conveniently realizes constant current value expansion programming and temperature compensation etc., satisfies the special needs of user.

(5), the circuit structure of the utility model has negative temperature characteristic, the automatic protection in the time of satisfying the high temperature application.

Description of drawings

Fig. 1 is the circuit structure diagram of existing constant-current circuit.

Fig. 2 is the circuit structure diagram of the utility model.

Embodiment

Further specify below in conjunction with the embodiment of accompanying drawing the utility model.

As shown in Figure 2; The circuit of the utility model comprises the resistance R revised 3 that resistance R 2 that high-tension resistive R1 that a high-pressure N-shaped DMOS pipe N1, BJT triode Q1, two ends are connected with drain electrode with the grid of high-pressure N-shaped DMOS pipe N1 respectively, two ends are connected with the base stage of the source electrode of high-pressure N-shaped DMOS pipe N1 and BJT triode Q1 respectively, two ends are connected with the emitter of the source electrode of high-pressure N-shaped DMOS pipe N1 and BJT triode Q1 respectively; And the voltage stabilizing diode D1 that negative electrode is connected with the collector of BJT triode Q1, anode is connected with the emitter of BJT triode Q1, the grid of high-pressure N-shaped DMOS pipe N1 is connected with the collector of BJT triode Q1.

Referring to Fig. 2, the circuit theory of the utility model is following: resistance R 1 is high pressure resistant resistance.The withstand voltage of high-pressure N-shaped DMOS pipe N1 reaches 700 volts.VA is that high-pressure N-shaped DMOS pipe N1 provides biasing through high-tension resistive R1.Voltage stabilizing diode D1 starts working when the grid voltage of high-pressure N-shaped DMOS pipe N1 is higher than the voltage breakdown of voltage stabilizing diode D1, when providing circuit to power up original state well to the transient protective of high-pressure N-shaped DMOS pipe N1 grid.High-pressure N-shaped DMOS pipe N1 begins to get into conducting state under the bias of resistance R 1, drain current flows through resistance R 3, and the voltage of generation is added in the base stage of BJT (ambipolar) triode Q1 through biasing resistor R2.Along with high-pressure N-shaped DMOS pipe N1 drain current strengthens; When the voltage on the resistance R 3 reaches the cut-in voltage of BJT triode Q1 base stage; BJT triode Q1 begins conducting; The collector current of BJT triode Q1 rises; Electric current through resistance R 1 strengthens, and the voltage VGS that is added in high-pressure N-shaped DMOS pipe N1 begins to descend, and stops the source-drain current of high-pressure N-shaped DMOS pipe N1 to continue to rise; Finally be stabilized in certain current value, realized exporting from the constant current of unlatching value (by the cut-in voltage sum decision of high-pressure N-shaped DMOS pipe N1 and BJT triode Q1) in the scope that (reaches as high as 700 volts) more than 350 volts at VAB voltage by the common decision of base-on voltage of resistance R 3 and BJT triode Q1.

In the utility model, the high-pressure N-shaped DMOS pipe adopts DMOS technology to make, and voltage stabilizing diode adopts CMOS technology to make, and the BJT triode adopts bipolar technology to make.Therefore; The utility model is produced on bipolar device, cmos device and DMOS device on the same chip simultaneously; Comprehensive bipolar device high transconductance, the high withstand voltage and cmos circuit advantage of low power consumption of DMOS power device make up for each other's deficiencies and learn from each other it, performance advantage separately.

The manufacturing process of following brief account high-pressure N-shaped DMOS pipe N1 and high-tension resistive R1:

The manufacturing process of high-pressure N-shaped DMOS pipe N1 is: high resistant p type substrate is adopted in (1), or on the low-resistance P-type substrate, carries out the high resistant extension, to form the needed P well area of N1.(2) adopt the N type to inject and diffuse to form the drain region of high pressure N1.(3) high pressure N1 pipe grid oxygen photoetching and deposit.(4) grid polycrystalline deposition and photoetching.(5) source/drain region N+ injects.(6) lithography contact hole and etching.(7) metal 1 deposit and photoetching.(8) through hole photoetching and etching.(9) metal 2 deposits and photoetching.(10) surface passivation layer deposit and etching.(11) thinning back side and metallization.

The manufacturing process of high-tension resistive R1 is: (1) is the deposit insulating medium on silicon substrate.(2) deposit polycrystalline and doping on dielectric substrate.(3) photoetching resistance pattern and etching.(4) electrode zone carries out heavy doping and is beneficial to the Ohmic contact with metal.(5) contact hole photoetching and etching.(6) metal deposit and etching.(7) surface passivation layer deposit and etching.

In addition, the circuit of the utility model can be packaged into two-terminal device, and a wherein end of this two-terminal device is the drain electrode of high-pressure N-shaped DMOS pipe, and the other end is the emitter of BJT triode.Perhaps, the utility model also can be packaged into three terminal device, and first end is the drain electrode of high-pressure N-shaped DMOS pipe, and second end is the source electrode of high-pressure N-shaped DMOS pipe, and the 3rd end is the emitter of BJT triode.Like this, just can between above-mentioned second end and the 3rd end, connect outer meeting resistance, be parallel to resistance R 3, realize special applications such as constant current value expansion programming and temperature compensation through outer meeting resistance.

Above-described only is the preferred implementation of the utility model, and the utility model is not limited to above embodiment.Be appreciated that other improvement and variation that those skilled in the art directly derive or associate under the prerequisite of the basic design that does not break away from the utility model, all should think to be included within the protection domain of the utility model.

Claims

1. single-chip UHV (ultra-high voltage) constant-current circuit; It is characterized in that: said circuit comprises the 3rd resistance (R3) that second resistance (R2) that first resistance (R1) that a high-pressure N-shaped DMOS pipe (N1), a BJT triode (Q1), two ends are connected with drain electrode with the grid of said high-pressure N-shaped DMOS pipe (N1) respectively, two ends are connected with the base stage of the source electrode of said high-pressure N-shaped DMOS pipe (N1) and BJT triode (Q1) respectively, two ends are connected with the emitter of the source electrode of said high-pressure N-shaped DMOS pipe (N1) and BJT triode (Q1) respectively; And the voltage stabilizing diode (D1) that negative electrode is connected with the collector of said BJT triode (Q1), anode is connected with the emitter of said BJT triode (Q1), the grid of said high-pressure N-shaped DMOS pipe (N1) is connected with the collector of BJT triode (Q1).

2. according to the said single-chip UHV (ultra-high voltage) of claim 1 constant-current circuit, it is characterized in that: said first resistance (R1) is high-tension resistive.

3. according to the said single-chip UHV (ultra-high voltage) of claim 1 constant-current circuit, it is characterized in that: said the 3rd resistance (R3) is the adjustable resistance revised of resistance.

4. according to the said single-chip UHV (ultra-high voltage) of claim 1 constant-current circuit, it is characterized in that: said high-pressure N-shaped DMOS pipe (N1) adopts DMOS technology to make.

5. according to the said single-chip UHV (ultra-high voltage) of claim 1 constant-current circuit, it is characterized in that: said voltage stabilizing diode (D1) adopts CMOS technology to make.

6. according to the said single-chip UHV (ultra-high voltage) of claim 1 constant-current circuit, it is characterized in that: said BJT triode (Q1) adopts bipolar technology to make.

7. according to any said single-chip UHV (ultra-high voltage) constant-current circuit in the claim 1 ~ 6, it is characterized in that: said circuit package is a two-terminal device, and two terminals are respectively the drain electrode of high-pressure N-shaped DMOS pipe (N1) and the emitter of BJT triode (Q1).

8. according to any said single-chip UHV (ultra-high voltage) constant-current circuit in the claim 1 ~ 6; It is characterized in that: said circuit package is a three terminal device, and three terminals are respectively the drain electrode of high-pressure N-shaped DMOS pipe (N1), the source electrode of high-pressure N-shaped DMOS pipe (N1) and the emitter of BJT triode (Q1).