CN101976938B - Stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit - Google Patents
Stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit Download PDFInfo
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- CN101976938B CN101976938B CN 201010288277 CN201010288277A CN101976938B CN 101976938 B CN101976938 B CN 101976938B CN 201010288277 CN201010288277 CN 201010288277 CN 201010288277 A CN201010288277 A CN 201010288277A CN 101976938 B CN101976938 B CN 101976938B
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Abstract
The invention discloses a stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit, which is used for improving the performance of a rectifying device. The conducting circuit consists of a metal oxide semiconductor field effect transistor (MOSFET) in which a parasitic diode is arranged, a Darlington transistor and a resistor, wherein an emitter of a first Darlington transistor is connected with a source of the MOSFET through a first resistor; a collector of the first Darlington transistor is connected with a grid of the MOSFET; a collector of a second Darlington transistor is connected with a drain of the MOSFET; a base of the first Darlington transistor and a base of the second Darlington transistor are in short circuit connection with an emitter of the second Darlington transistor and then are connected with a positive pole of a driving power supply through a second resistor; and the grid of the MOSFET is connected with the positive pole of the driving power supply through a third resistor. Compared with a traditional control circuit, the conducting circuit ensures that four operational amplifiers are replaced by two Darlington transistors, and has the advantages of simple structure, low cost, high response speed, reaction time in a nanosecond grade, no reverse current and stable and reliable work.
Description
Technical field
The present invention relates to a kind of circuit that adopts power MOSFET to make the unilateal conduction (electronic diode) that high-current low-voltage falls, belong to the electric component technical field.
Background technology
Along with the development of power electronic technology, various electronic installations are more and more higher to the requirement of power, and are also increasing to the requirement of electric current, and the especially application of large scale integrated circuit is especially towards the future development of low-voltage, high-current.In modern power electronics technology, use widely the low-voltage, high-current diode and realized various functions, such as: rectification, DC-isolation etc.Along with the increasing of operating current, the conduction voltage drop of diode becomes one of Main Bottleneck of restriction overall efficiency raising, and the conduction voltage drop of general large current commutates diode is more than 0.7V.The method that reduces diode losses mainly contains two kinds: the one, and the diode of employing low pressure drop, for example Schottky diode.The conduction voltage drop of high-power Schottky diode about 0.5V, need not increase extra control circuit during use usually, and circuit is simple, the convenient realization.Its shortcoming is that the conduction voltage drop of Schottky diode is still larger, and the inverse peak voltage of existing Schottky diode only is 200V, has seriously restricted its application in the high voltage occasion.Another kind method is to adopt the power MOSFET of low on-resistance to replace diode to realize rectification function.The conduction impedance of power MOSFET is very little, even it is also very little to flow through its pressure drop of very large electric current, is conducive to the raising of efficient.But because power MOSFET has the characteristic of two-way admittance, must increase control circuit when adopting the power MOSFET rectification, and existing MOSFET control circuit complex structure, the device that needs is more, generally needs four operational amplifiers and amplifier peripheral devices, quantity is about more than 20, not only cost is high, and the control loop reaction speed is slow, and outer filling reverse voltage the reaction time is about several milliseconds, and the anti-short circuit phenomenon of filling with of immediate current is arranged, thereby reduced stability and the reliability of work.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of simple in structure, working stability is reliable, the unilateal conduction circuit falls in employing high-current low-voltage power MOSFET, stable and reliable operation.
Problem of the present invention realizes with following technical proposals:
The unilateal conduction circuit falls in a kind of high-current low-voltage of stable and reliable operation, formed with the MOSFET of parasitic diode, two Darlington triodes and resistance by inside, wherein, the emitter of the first Darlington triode connects the source electrode of MOSFET through the first resistance, the collector electrode of the first Darlington triode connects the grid of MOSFET; The collector electrode of the second Darlington triode connects the drain electrode of MOSFET, the emitter of the base stage of the base stage of the first Darlington triode, the second Darlington triode and the second Darlington triode all connects the driving power positive pole by the second resistance, and the grid of described MOSFET connects the driving power positive pole through the 3rd resistance.
The unilateal conduction circuit falls in the high-current low-voltage of above-mentioned stable and reliable operation, also is connected to anti-error conducting resistance between the grid of described MOSFET and the source electrode.
The present invention adopts two identical Darlington triode detection power MOSFET drain electrodes with low saturation conduction voltage and the voltage between the source electrode, then control the grid voltage of MOSFET according to the direction of voltage between MOSFET drain electrode and the source electrode, thereby realize the one-way conduction of MOSFET.Compare with traditional control circuit, the present invention has replaced four operational amplifiers with two Darlington triodes, realized the unilateal conduction of circuit, not only have simple in structure, advantage with low cost, and reaction speed is fast, and the reaction time is nanosecond, without anti-phenomenon of filling with electric current, working stability is reliable.
Description of drawings
The invention will be further described below in conjunction with accompanying drawing.
Fig. 1 is electrical schematic diagram of the present invention.
Each label is among the figure: V1, MOSFET; Q1, the first Darlington triode; Q2, the second Darlington triode; R1～R3, first～the 3rd resistance; R4, anti-error conducting resistance; The parasitic diode of D1, MOSFET inside; VCC2, MOSFET driving power.
Embodiment
Referring to Fig. 1, operation principle of the present invention is: suppose not conducting of MOSFET, the resistance of resistance R 1 is 0 Ω, have electric current to flow through D1 this moment, the sense of current is that source electrode arrives drain electrode, conduction voltage drop is the conduction voltage drop of diode D1, be about 0.7V, suppose that the electric current that flows through this moment is 100A, then loss is 0.7V * 100A=70W, because the emitter voltage of the first Darlington triode Q1 is higher than the collector voltage of the second Darlington triode Q2 at this moment, the collector junction forward bias of the second Darlington triode Q2, the second Darlington triode Q2 conducting drags down the base potential of the first Darlington triode Q1, the first Darlington triode Q1 cut-off this moment, VCC2 is set to high level by the 3rd resistance R 3 with the grid of V1, the V1 conducting, and the conducting resistance that the conduction voltage drop of V1 equals V1 multiply by the electric current that passes through, the conducting resistance of supposing V1 is 0.5 milliohm, and then loss is 0.5 * 10
-3* 100
2=5W, as long as there is electric current to flow to drain electrode from source electrode, circuit steady operation always then.When source voltage is less than or equal to drain voltage, the collector junction reverse bias of the second Darlington triode Q2, the second Darlington triode Q2 cut-off, the emitter junction forward bias of the first Darlington triode Q1, the first Darlington triode Q1 conducting, the grid of V1 is the saturation conduction pressure drop of the first Darlington triode Q1 with respect to the voltage of source electrode, less than 0.2V, the V1 cut-off, the D1 reverse bias also ends, so reverse current can not flow into.By above analysis as seen, the present invention has the one-way conduction characteristic, and owing to not adding the delay circuit element of capacitance kind, switching time is extremely short, reduced the loss that the diode current flow pressure drop causes greatly, and this circuit can turn-off rapidly MOSFET when the MOSFET both end voltage is reverse, prevents that reverse current from flowing through, and has the characteristic of desirable diode.By adjusting the resistance of the first resistance R 1, can adjust the conduction voltage drop of V1, when realizing little current work, reduce the function of V1 conduction voltage drop.
Claims (2)
1. the unilateal conduction circuit falls in the high-current low-voltage of a stable and reliable operation, it is characterized in that, it is comprised of with the MOSFET (V1) of parasitic diode, two Darlington triodes and resistance inside, wherein, the emitter of the first Darlington triode (Q1) connects the source electrode of MOSFET (V1) through the first resistance (R1), the collector electrode of the first Darlington triode (Q1) connects the grid of MOSFET (V1); The collector electrode of the second Darlington triode (Q2) connects the drain electrode of MOSFET (V1), the emitter of the base stage of the base stage of the first Darlington triode (Q1), the second Darlington triode (Q2) and the second Darlington triode (Q2) all connects the driving power positive pole by the second resistance (R2), and the grid of described MOSFET (V1) connects the driving power positive pole through the 3rd resistance (R3).
2. the unilateal conduction circuit falls in the high-current low-voltage of described stable and reliable operation according to claim 1, it is characterized in that, also is connected to anti-error conducting resistance (R4) between the grid of described MOSFET (V1) and the source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010288277 CN101976938B (en) | 2010-09-20 | 2010-09-20 | Stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010288277 CN101976938B (en) | 2010-09-20 | 2010-09-20 | Stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit |
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| Publication Number | Publication Date |
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| CN101976938A CN101976938A (en) | 2011-02-16 |
| CN101976938B true CN101976938B (en) | 2013-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010288277 Active CN101976938B (en) | 2010-09-20 | 2010-09-20 | Stable and reliable-operation heavy-current low-pressure drop one-way conducting circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014041666A1 (en) * | 2012-09-13 | 2014-03-20 | 三菱電機株式会社 | Semiconductor device and automobile using said semiconductor device |
| CN106787715B (en) * | 2017-01-11 | 2023-04-07 | 深圳硕日新能源科技有限公司 | Self-excitation type voltage reduction circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1521354A2 (en) * | 2003-10-02 | 2005-04-06 | Robert Bosch Gmbh | Synchronous rectifier |
| CN1822483A (en) * | 2005-11-28 | 2006-08-23 | 伊博电源（杭州）有限公司 | Self driving circuit for three winding reverse exciting converter synchronous rectifier |
| CN201523258U (en) * | 2009-10-27 | 2010-07-07 | 沈阳晨讯希姆通科技有限公司 | Power supply device of electronic equipment |
| CN201821254U (en) * | 2010-09-20 | 2011-05-04 | 石家庄国耀电子科技有限公司 | One-way conductive circuit capable of realizing high current and low voltage drop |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7492138B2 (en) * | 2004-04-06 | 2009-02-17 | International Rectifier Corporation | Synchronous rectifier circuits and method for utilizing common source inductance of the synchronous FET |
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2010
- 2010-09-20 CN CN 201010288277 patent/CN101976938B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1521354A2 (en) * | 2003-10-02 | 2005-04-06 | Robert Bosch Gmbh | Synchronous rectifier |
| CN1822483A (en) * | 2005-11-28 | 2006-08-23 | 伊博电源（杭州）有限公司 | Self driving circuit for three winding reverse exciting converter synchronous rectifier |
| CN201523258U (en) * | 2009-10-27 | 2010-07-07 | 沈阳晨讯希姆通科技有限公司 | Power supply device of electronic equipment |
| CN201821254U (en) * | 2010-09-20 | 2011-05-04 | 石家庄国耀电子科技有限公司 | One-way conductive circuit capable of realizing high current and low voltage drop |
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| CN101976938A (en) | 2011-02-16 |
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Effective date of registration: 20151102 Address after: 518129, 6 floor, 10 Dragon Wall Industrial Zone, Buji Town, Shenzhen Town, Longgang District, Guangdong, Bantian Patentee after: SHENZHEN GYE ELECTRONIC TECHNOLOGY CO., LTD. Address before: 050035 No. 56, 3 Kunlun street, Shijiazhuang Development Zone, Hebei, China Patentee before: Shijiazhuang Guoyuo Electrnic Science & Technology Co., Ltd. Patentee before: Shenzhen Guoyao Electronics Technology Co., Ltd. |