CN112260523A - Parallel current sharing system and method of SiC power device and power electronic equipment - Google Patents
Parallel current sharing system and method of SiC power device and power electronic equipment Download PDFInfo
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- CN112260523A CN112260523A CN202010983784.XA CN202010983784A CN112260523A CN 112260523 A CN112260523 A CN 112260523A CN 202010983784 A CN202010983784 A CN 202010983784A CN 112260523 A CN112260523 A CN 112260523A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0025—Arrangements for modifying reference values, feedback values or error values in the control loop of a converter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The application discloses a parallel current sharing system and method of SiC power devices and power electronic equipment, which comprises a plurality of SiC power devices connected in parallel, a temperature sampling unit, a processing unit and a driving unit; the temperature sampling unit samples the temperature of the SiC power device; the processing unit acquires temperature signals of adjacent SiC power devices; comparing and amplifying temperature signals of adjacent SiC power devices; outputting a voltage regulating signal of at least one SiC power device in adjacent SiC power devices according to the differential amplifying signal; the driving unit adjusts the driving voltage of at least one SiC power device according to the voltage adjusting signal. According to the method, the temperature of the SiC power device is sampled and compared, the voltage adjusting signal is used for adjusting the driving voltage of the SiC power device to control the loss of the SiC power device, so that the temperature balance between the SiC power devices is adjusted, and the effect of parallel connection and flow equalization is achieved.
Description
Technical Field
The application relates to the technical field of power electronics, in particular to a parallel current sharing system and method of a SiC power device and power electronic equipment.
Background
Due to the limitation of the manufacturing process level of SiC (Silicon Carbide) power devices, the discreteness of the devices themselves is large even if the devices are produced in the same batch. When multiple tubes are used in parallel, the problem of current imbalance caused by the discreteness of the device is obvious, and the output capacity of the SiC power device is greatly limited.
The current parallel current sharing technology of the existing SiC power device mainly comprises two types:
one is to connect a current-sharing inductor in series on a power branch of the SiC power device to balance the current between different branches; but when the power is larger, the requirement on the current-sharing inductance in series connection is very high, and the design is difficult to realize;
the other method is to optimize the layout of the parallel SiC power devices to make equivalent parasitic parameters of all branches as consistent as possible so as to solve the problem of current imbalance caused by the parasitic parameters, but the method cannot avoid the problem of current imbalance caused by the discreteness of the devices and has limited parallel current sharing effect.
Disclosure of Invention
In view of this, an object of the present application is to provide a parallel current sharing system and method for SiC power devices, and a power electronic device, so as to solve the problem of current imbalance caused by the discreteness of the SiC power devices themselves.
The technical scheme adopted by the application for solving the technical problems is as follows:
according to one aspect of the application, a parallel current sharing system of SiC power devices is provided, which comprises a plurality of SiC power devices connected in parallel; the device also comprises a temperature sampling unit, a processing unit and a driving unit;
the temperature sampling unit is used for sampling the temperature of the SiC power device to output a corresponding temperature signal;
the processing unit is used for acquiring temperature signals of adjacent SiC power devices; comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals; outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
the driving unit is used for adjusting the driving voltage of the at least one SiC power device according to the voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
According to another aspect of the application, a parallel current sharing method for a SiC power device is provided, the method including:
acquiring temperature signals of adjacent SiC power devices;
comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals;
outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
and adjusting the driving voltage of the at least one SiC power device according to the voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
According to another aspect of the application, a power electronic device is provided, wherein the power electronic device comprises a parallel current sharing system of the SiC power device.
According to the parallel current sharing system and method for the SiC power devices and the power electronic equipment, the temperature of the SiC power devices is sampled and compared, the voltage adjusting signals are used for adjusting the driving voltage of the SiC power devices to control the loss of the SiC power devices, the temperature balance among the SiC power devices is further adjusted, and the effect of parallel current sharing is achieved.
Drawings
Fig. 1 is a schematic diagram of a parallel current sharing system of a SiC power device provided in an embodiment of the present application;
fig. 2 is a schematic diagram of a parallel current sharing system of another SiC power device provided in an embodiment of the present application;
fig. 3 is a schematic diagram of a temperature sampling unit in a parallel current sharing system of a SiC power device according to an embodiment of the present application;
fig. 4 is a schematic diagram of a differential amplifier circuit and a level shift circuit in a parallel current sharing system of a SiC power device provided in the embodiment of the present application;
fig. 5 is a schematic diagram of a voltage regulating circuit in a parallel current sharing system of a SiC power device provided in the embodiment of the present application;
fig. 6 is a schematic diagram of a driving unit in a parallel current sharing system of a SiC power device provided in an embodiment of the present application;
fig. 7 is a schematic flow chart of a parallel current sharing method for a SiC power device according to an embodiment of the present application.
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Example one
As shown in fig. 1, a parallel current sharing system of a SiC power device according to an embodiment of the present application includes a plurality of SiC power devices connected in parallel; the device also comprises a temperature sampling unit 11, a processing unit 12 and a driving unit 13;
the temperature sampling unit 11 is configured to sample a temperature of the SiC power device to output a corresponding temperature signal;
the processing unit 12 is configured to obtain temperature signals of adjacent SiC power devices; comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals; outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
the driving unit 13 is configured to adjust a driving voltage of the at least one SiC power device according to the voltage adjustment signal to reduce a temperature difference between adjacent SiC power devices.
In this example, the temperature sampling unit includes a voltage dividing resistor and a thermistor connected in series. Wherein the thermistor is placed in close proximity to the SiC power device.
In this example, the processing unit includes a differential amplification circuit and a voltage regulation circuit;
the input end of the differential amplification circuit is connected with the temperature sampling unit to obtain a temperature signal of an adjacent SiC power device; the differential amplification circuit is used for comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals;
and the voltage regulating circuit is used for outputting a voltage regulating signal of the at least one SiC power device according to the differential amplifying signal.
Further, the processing unit further comprises a level shift circuit;
the level shift circuit is used for carrying out level shift processing on the differential amplification signal so as to output the processed differential amplification signal;
and the voltage regulating circuit is used for outputting a voltage regulating signal of the at least one SiC power device according to the differential amplification signal processed by the level shifting circuit.
In an embodiment, the driving unit 13 is further configured to select one voltage regulation signal when there are two voltage regulation signals in the at least one SiC power device; and adjusting the driving voltage of the at least one SiC power device according to the selected voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
The following description is made in conjunction with fig. 2-6:
as shown in fig. 2, the SiC power device includes n SiC-MOS transistors, n temperature sampling units 11, n processing units 12, and n driving units 13, where each processing unit includes a differential amplification circuit, a level shift circuit, and a voltage regulation circuit.
The n temperature sampling units 11 respectively sample the temperatures of the n SiC-MOS transistors to output corresponding temperature signals.
The processing unit 12 is used for acquiring temperature signals of adjacent SiC-MOS transistors; comparing and amplifying temperature signals of adjacent SiC-MOS tubes to output differential amplification signals; and outputting a voltage regulation signal of at least one SiC-MOS tube in the adjacent SiC-MOS tubes according to the differential amplification signal.
The driving unit 13 adjusts the driving voltage of the at least one SiC-MOS transistor according to the voltage adjustment signal to reduce the temperature difference between adjacent SiC-MOS transistors.
For example: the differential amplification circuit 1 acquires a temperature signal 1 of the SiC-MOS tube 1 and a temperature signal 2 of the SiC-MOS tube 2, and compares the temperature signal 1 with the temperature signal 2 to output a differential amplification signal; the level shift circuit 1 performs level shift processing on the differential amplified signal to output a processed differential amplified signal; the voltage regulating circuit 1 outputs a voltage regulating signal of the SiC-MOS tube 1 and/or the SiC-MOS tube 2 according to the differential amplifying signal processed by the level shifting circuit. The driving unit 1 adjusts the driving voltage of the SiC-MOS tube 1 and/or the SiC-MOS tube 2 according to the voltage adjusting signal of the SiC-MOS tube 1 and/or the SiC-MOS tube 2 to reduce the temperature difference between the SiC-MOS tube 1 and the SiC-MOS tube 2, so that the effect of parallel connection and current sharing is achieved.
If the SiC-MOS tube has multiple voltage regulation signals, for example: the SiC-MOS transistor 2 has a voltage regulation signal 1 and a voltage regulation signal 2, and at this time, the driving unit 2 selects one voltage regulation signal from the voltage regulation signal 1 and the voltage regulation signal 2 to regulate the driving voltage of the SiC-MOS transistor 2.
Referring to fig. 3, the temperature sampling unit 1 is composed of a voltage dividing resistor R1 and a thermistor NTC1 connected in series, where vt1 is a temperature signal output by the temperature sampling unit 1; the temperature sampling unit 2 is composed of a voltage division resistor R2 and a thermistor NTC2 which are connected in series, and vt2 is a temperature signal output by the temperature sampling unit 2.
Referring to FIG. 4, the differential amplifier circuit 1 comprises an operational amplifier and R3-R6, and the level shifter circuit 1 comprises an operational amplifier and R7-R8. The level shift circuit 1 outputs the differential amplified signal Vfb after the level shift processing.
Referring to fig. 5, the voltage regulator circuit 1 is composed of a reference source IC, a resistor R9, a resistor R10, a resistor R11, and a resistor R12, wherein the reference source IC generates a fixed reference voltage Vref, and a voltage change of the differential amplification signal Vfb causes a current change at the resistor R12, thereby affecting a change of the output voltage VCC 1.
Referring to fig. 6, the driving unit 1 is composed of a driving IC, two transistors connected in series, and a resistor R13, and the driving unit 1 is used for providing a driving voltage to the SiC-MOS transistor.
When the SiC-MOS tubes work in parallel, current imbalance is easily caused due to the problems of device discreteness and the like, so that large temperature difference exists between the parallel SiC-MOS tubes. When the temperature difference between the SiC-MOS tubes is detected, for example, Vt1 is larger than Vt2, the temperature signal is subjected to differential amplification and level shift processing, and a feedback signal is transmitted to the voltage regulating circuit to reduce the driving voltage of the SiC-MOS tube 1, so that the on-resistance Rds of the SiC-MOS tube 1 is increased, the flowing current Id is reduced, the loss is reduced, and the temperature T1 is reduced. Meanwhile, the feedback signal can be transmitted to the voltage regulating circuit to increase the driving voltage of the SiC-MOS tube 2, so that the on-resistance Rds of the SiC-MOS tube 2 becomes smaller, the flowing current Id becomes larger, the loss increases, the temperature T2 rises, and the difference value (Vt1-Vt2) is reduced. When the difference (Vt1-Vt2) begins to decrease, the amplitude of the change of the driving voltage is reduced, the temperature T1 and the change rate of T2 are reduced, and finally the temperature of the SiC-MOS tube is close to each other and is stabilized in a state that the difference (Vt1-Vt2) is extremely small, and the temperature balance among the SiC-MOS tubes is achieved.
When multiple parallel-connected SiC-MOS tubes are used, temperature sampling is carried out between two adjacent SiC-MOS tubes, two feedback signals exist in one or more middle SiC-MOS tubes, the high value of the feedback signals is taken as driving voltage, the temperatures of the two adjacent SiC-MOS tubes are close to each other and finally reach balance, the temperature of the parallel-connected SiC-MOS tubes is finally balanced, and meanwhile, the total loss of the multiple parallel-connected SiC-MOS tubes cannot be increased or even possibly reduced.
Example two
As shown in fig. 7, a second embodiment of the present application provides a parallel current sharing method for a SiC power device, and the contents of the first embodiment of the parallel current sharing system for the SiC power device can be referred to.
The method comprises the following steps:
step S11, acquiring temperature signals of adjacent SiC power devices;
step S12, comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals;
step S13, outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
and step S14, adjusting the driving voltage of the at least one SiC power device according to the voltage adjusting signal to reduce the temperature difference of adjacent SiC power devices.
Further, the method further comprises:
selecting one path of voltage regulating signal under the condition that two paths of voltage regulating signals exist in the at least one SiC power device;
and adjusting the driving voltage of the at least one SiC power device according to the selected voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
EXAMPLE III
The third embodiment of the application provides power electronic equipment which comprises a parallel current equalizing system of a SiC power device.
The parallel current sharing system of the SiC power device can refer to the content of the first embodiment. The power electronic equipment includes but is not limited to wind power converters, photovoltaic inverters, frequency converters, energy storage systems, and the like.
The preferred embodiments of the present application have been described above with reference to the accompanying drawings, and are not intended to limit the scope of the claims of the application accordingly. Any modifications, equivalents and improvements which may occur to those skilled in the art without departing from the scope and spirit of the present application are intended to be within the scope of the claims of the present application.
Claims (10)
1. A parallel current sharing system of SiC power devices comprises a plurality of SiC power devices connected in parallel; the device is characterized by also comprising a temperature sampling unit, a processing unit and a driving unit;
the temperature sampling unit is used for sampling the temperature of the SiC power device to output a corresponding temperature signal;
the processing unit is used for acquiring temperature signals of adjacent SiC power devices; comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals; outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
the driving unit is used for adjusting the driving voltage of the at least one SiC power device according to the voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
2. The parallel current sharing system of the SiC power devices of claim 1, wherein the driving unit is further configured to select one of the voltage regulation signals when there are two of the voltage regulation signals in the at least one SiC power device; and adjusting the driving voltage of the at least one SiC power device according to the selected voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
3. The parallel current sharing system of the SiC power devices of claim 1 or 2, wherein the temperature sampling unit comprises a voltage divider resistor and a thermistor connected in series.
4. The parallel current sharing system of SiC power devices of claim 3 wherein the thermistor is placed in close proximity to the SiC power device.
5. The parallel current sharing system of the SiC power devices of claim 1 or 2, wherein the processing unit comprises a differential amplifying circuit and a voltage regulating circuit;
the input end of the differential amplification circuit is connected with the temperature sampling unit to obtain a temperature signal of an adjacent SiC power device; the differential amplification circuit is used for comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals;
and the voltage regulating circuit is used for outputting a voltage regulating signal of the at least one SiC power device according to the differential amplifying signal.
6. The parallel current sharing system of SiC power devices of claim 5, wherein the processing unit further comprises a level shifting circuit;
the level shift circuit is used for carrying out level shift processing on the differential amplification signal so as to output the processed differential amplification signal;
and the voltage regulating circuit is used for outputting a voltage regulating signal of the at least one SiC power device according to the differential amplification signal processed by the level shifting circuit.
7. The parallel current sharing system of the SiC power devices of claim 6, wherein the number of the temperature sampling units, the differential amplifying circuits, the level shifting circuits, the voltage regulating circuits and the driving units is multiple.
8. A parallel current sharing method of a SiC power device is characterized by comprising the following steps:
acquiring temperature signals of adjacent SiC power devices;
comparing and amplifying temperature signals of adjacent SiC power devices to output differential amplification signals;
outputting a voltage regulation signal of at least one SiC power device in adjacent SiC power devices according to the differential amplification signal;
and adjusting the driving voltage of the at least one SiC power device according to the voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
9. The method of claim 8, further comprising:
selecting one path of voltage regulating signal under the condition that two paths of voltage regulating signals exist in the at least one SiC power device;
and adjusting the driving voltage of the at least one SiC power device according to the selected voltage adjusting signal so as to reduce the temperature difference of adjacent SiC power devices.
10. A power electronic device characterized in that it comprises a parallel current sharing system of SiC power devices according to any of claims 1 to 7.
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