CN106527531A - Parallel IGBT (Insulated Gate Bipolar Translator) temperature control device and method - Google Patents
Parallel IGBT (Insulated Gate Bipolar Translator) temperature control device and method Download PDFInfo
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- CN106527531A CN106527531A CN201611257758.9A CN201611257758A CN106527531A CN 106527531 A CN106527531 A CN 106527531A CN 201611257758 A CN201611257758 A CN 201611257758A CN 106527531 A CN106527531 A CN 106527531A
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- 230000005611 electricity Effects 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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Abstract
The invention provides a parallel IGBT (Insulated Gate Bipolar Translator) temperature control device, comprising at least two IGBTs, a temperature sensor, a drive circuit and a control unit, wherein the at least two IGBTs are connected in parallel to each other; the temperature sensor is used for monitoring the shell temperature of each of the at least two IGBTs; the output end of the drive circuit is connected to the gate of each IGBT; the control unit is connected with the temperature sensor and the drive circuit, and outputs a control signal to the drive circuit according to the shell temperatures, so that the drive circuit adjusts the forward gate voltage output to the IGBTs connected with the output end of the drive circuit according to the control signal. Besides, the invention further provides an IGBT temperature control method.
Description
Technical field
The present invention relates to IGBT temperature control technology, more particularly to a kind of parallel IGBT temperature control equipment and corresponding
Parallel IGBT temperature-controlled process.
Background technology
With the development of power electronic technology, and single IGBT (Insulated Gate Bipolar Transistor, absolutely
Edge grid bipolar transistor) levels of current persistently lifted, but still the demand of large-capacity transducer cannot be met.In view of IGBT
Reliability, economy and other factors, the IGBT for selecting highest ranking is not best solution sometimes.It is preferably square
Method is meeting the current requirements of single inverter using multiple IGBT parallel technologies.
The temperature of IGBT is the key factor during parallel IGBT use.Following factor can cause parallel IGBT
Uneven high temperature：
The difference of 1.IGBT inherent parameters；
2. the difference of external circuit parameter；
The difference of 3.IGBT radiating conditions.
This uneven high temperature of parallel IGBT limits the output current of IGBT, and affects that IGBT's is static and dynamic
Flow.Therefore, how to control IGBT temperature becomes a very important research direction in IGBT parallel technologies field.
The content of the invention
The present invention proposes a kind of parallel IGBT temperature control equipment and corresponding parallel IGBT temperature-controlled process.It is special
It is not that the present invention causes the temperature of parallel IGBT to be balanced by adjusting the positive grid voltage of IGBT.The present invention's is basic
Concept is：The positive grid voltage of IGBT can affect the collector emitter voltage of IGBT to drop, and then affect the shell of IGBT
Temperature.
According to an aspect of the invention, there is provided a kind of parallel IGBT temperature control equipment, including：
At least two IGBT, at least two IGBT are connected in parallel to each other；
Temperature sensor, monitors the shell temperature of each at least two IGBT；
Drive circuit, the outfan of the drive circuit are connected to the grid of the IGBT；
Control unit, is connected with the temperature sensor and the drive circuit, and wherein described control unit is according to described
Shell temperature is to the drive circuit output control signal, so that the drive circuit is adjusted the output to and institute according to the control signal
State the positive grid voltage of the IGBT that the outfan of drive circuit is connected.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, each IGBT is driven with one
Galvanic electricity road and a temperature sensor for being used to monitor its shell temperature.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is from all temperature
Sensor receives the shell temperature of each IGBT, calculates the average shell temperature of all IGBT as reference value, and according to each IGBT
The gentle reference value of shell deviation, to each IGBT drive circuit output for the IGBT control signal, institute
Control signal is stated for adjusting the positive grid voltage of each IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is also to the drive
Dynamic circuit output is used for the IGBT drive signals of IGBT described on or off.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is in the same time
To the drive circuit output identical IGBT drive control signal of each IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the drive circuit is further included：
Forward voltage adjusts circuit, is connected to described control unit to receive the control signal；
Output circuit is driven, and circuit is adjusted with the forward voltage and described control unit is connected, wherein, the driving
Output circuit receives from the IGBT drive signals of described control unit and from the forward voltage output for adjusting circuit,
Then export to the grid of the IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the positive grid voltage is used to control
The shell temperature of the IGBT is made,
Wherein, when the shell temperature of an IGBT is more than the reference value, described control unit is exported for raising the IGBT
Positive grid voltage control signal to the drive circuit；
Wherein, when the shell temperature of an IGBT is less than the reference value, described control unit is exported for reducing the IGBT
Positive grid voltage control signal to the drive circuit.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the temperature sensor is arranged at institute
State the centre of IGBT.
According to a further aspect in the invention, there is provided a kind of parallel IGBT temperature-controlled process, it is adaptable to be connected in parallel to each other
At least two IGBT, including：
Monitor the shell temperature of each at least two IGBT；
The positive grid voltage of IGBT is adjusted the output to according to the shell temperature.
It is according to one embodiment, in above-mentioned parallel IGBT temperature-controlled process, described to adjust defeated according to the shell temperature
The step of going out the positive grid voltage to IGBT further includes：
The average shell temperature of all IGBT is calculated as reference value；
When the shell temperature of an IGBT is more than the reference value, the positive grid voltage of the IGBT is raised；
When the shell temperature of an IGBT is less than the reference value, the positive grid voltage of the IGBT is reduced.
It should be appreciated that the general description and the following detailed description more than present invention is all exemplary and explanat,
And it is intended that the present invention as claimed in claim provides further explanation.
Description of the drawings
It is that they are included and constitute the part of the application to provide further understanding of the invention including accompanying drawing,
Accompanying drawing shows embodiments of the invention, and plays a part of to explain the principle of the invention together with this specification.In accompanying drawing：
Fig. 1 is the circuit block diagram of parallel IGBT temperature control equipment according to an embodiment of the invention.
Fig. 2 is the circuit block diagram of drive circuit according to an embodiment of the invention.
Fig. 3 is the flow chart of parallel IGBT temperature-controlled process according to an embodiment of the invention.
Fig. 4 is the flow chart of parallel IGBT temperature-controlled process according to another embodiment of the invention.
Description of reference numerals：
1 parallel IGBT temperature control equipment
2 IGBT
3 temperature sensors
4 drive circuits
5 control units
6 forward voltages adjust circuit
7 drive output circuit
Specific embodiment
Now with detailed reference to Description of Drawings embodiments of the invention.Being preferable to carry out with detailed reference to of the invention now
Example, its example are shown in the drawings.In the case of any possible, phase will be represented using identical labelling in all of the figs
Same or similar part.Additionally, although the term used in the present invention is selected from public term, this
Some terms mentioned in description of the invention are probably that applicant carrys out selection by his or her judgement, and its detailed meanings is at this
Explanation in the relevant portion of the description of text.In addition, it is desirable to not only by the actual terms for being used, and be also to by each
The meaning contained by term is understanding the present invention.
Discuss the ultimate principle and preferred embodiment of the present invention with reference to Fig. 1 and Fig. 2 in more detail.As illustrated, this
Bright parallel IGBT temperature control equipment 1 mainly includes：IGBT 2, temperature sensor 3, drive circuit 4 and control unit 5.
As shown in figure 1, at least two IGBT 2 are connected in parallel to each other, to meet the requirement of high current.
Temperature sensor 3 is arranged at IGBT 2, such as at the centre of each IGBT 2, to monitor each
The shell temperature of IGBT 2.As an example, a temperature sensor 3 can be respectively provided with each IGBT 2, such as Fig. 1 institutes
The embodiment shown is such.Or, upper and lower two IGBT are included in some half-bridge modules, in this half-bridge module, setting one is warm
Degree sensor can also measure the temperature of this upper and lower two IGBT simultaneously.Therefore, the quantity of temperature sensor 3 of the invention is simultaneously
The quantity of nonessential same IGBT 2 is consistent, it is only necessary to guarantee to monitor the shell Wen Jike of each IGBT 2.
Additionally, the outfan of drive circuit 4 is connected to the grid of IGBT 2, to the positive grid electricity for adjusting the IGBT 2
Press and control the on or off of the IGBT 2.
Control unit 5 is connected with temperature sensor 3 and drive circuit 4.Control unit 5 is received first from temperature sensor
3 feedback (the shell temperature for monitoring), it is possible to according to shell temperature to 4 output control signal Vgiven of drive circuit, so as to drive
Circuit 4 adjusts the output to the forward direction of the IGBT 2 being connected with the outfan of the drive circuit 4 according to control signal Vgiven
Grid voltage.
Based on foregoing circuit structure, it is possible to adjust the positive grid voltage of IGBT 2 adjust the colelctor electrode of IGBT 2-
Emitter voltage drops, and then adjusts the shell temperature of IGBT 2, and the final temperature for causing parallel IGBT realizes balance.
In the embodiment shown in fig. 1, each IGBT 2 is used to monitor which with a drive circuit 4 and one
The temperature sensor 3 of shell temperature.So, control unit 5 can receive the shell temperature of each IGBT 2 from all temperature sensors 3,
The average shell temperature of all IGBT 2 is calculated as reference value, and according to the inclined of the gentle said reference value of shell of each IGBT 2
Difference, is directed to control signal Vgiven of the IGBT 2, control signal Vgiven to the output of drive circuit 4 of each IGBT 2
For adjusting the positive grid voltage of each IGBT 2.So a closed loop control is set up for each IGBT 2.
For example, when the shell temperature of some IGBT 2 is more than reference value, control unit 5 is exported for raising the IGBT's 2
Control signal Vgiven of positive grid voltage is to drive circuit 4；And, when the shell temperature of an IGBT 2 is less than reference value, control
Unit processed 5 export for reduce the IGBT 2 positive grid voltage control signal Vgiven to drive circuit 4.Because,
The positive grid voltage of IGBT 2 is lower, then the collector emitter voltage drop of the IGBT 2 is higher at a given current, otherwise
It is as the same.It is assumed that the electric current during the conducting phase of IGBT is constant, then below equation can be used to calculate conduction loss Pcon：
Pcon=Uce*Ic, wherein Uce are that collector emitter voltage drops and Ic is above-mentioned constant electric current.Additionally, by adjusting
The positive grid voltage of IGBT can also change the switching loss of IGBT, but the impact is very little, can ignore.
Additionally, control unit 5 can be exporting the IGBT drive signals on or off IGBT to drive circuit 4
(IGBT drive signal).Fig. 2 is gone to, drive circuit 4 may further include：Forward voltage adjusts circuit 6 and drives defeated
Go out circuit 7.Forward voltage adjusts circuit 6 and is connected to control unit 5 to receive control signal Vgiven.Drive output circuit 7 with
Forward voltage adjusts circuit 6 and control unit 5 connects respectively.The driving output circuit 7 is received and is driven from the IGBT of control unit 5
Dynamic signal (IGBT drive signal) and the output from forward voltage regulation circuit 6, are then exported in the lump to IGBT 2
Grid.For example, the IGBT drive controls letter that control unit 5 was exported to the drive circuit 4 of each IGBT 2 in the same time
Number can be identical, but control signal Vgiven of output of same time is then different and different from each other because of above-mentioned deviation.
Fig. 3 is the flow chart of parallel IGBT temperature-controlled process according to an embodiment of the invention.The parallel IGBT
Temperature-controlled process is applied at least two IGBT being connected in parallel to each other, it is possible to comprise the following steps：
S1：Monitor the shell temperature of each at least two IGBT；
S2：The positive grid voltage of IGBT is adjusted the output to according to shell temperature.
More specifically, in the embodiment shown in fig. 4, step S2 may further include：
S2-1：The average shell temperature of all IGBT is calculated as reference value；
S2-2：When the shell temperature of an IGBT is more than reference value, the positive grid voltage of the IGBT is raised；
S2-3：When the shell temperature of an IGBT is less than reference value, the positive grid voltage of the IGBT is reduced.
To sum up, parallel IGBT temperature control equipment proposed by the invention and method at least possess following some advantage：
1) present invention is easy to make the hygral equilibrium of parallel IGBT, so as to lift the reliability of parallel IGBT circuit；
2) compared with other solutions of prior art, the cost of implementation of the present invention is lower；
3) higher performance is easily obtained using the converter of the present invention.
Those skilled in the art can be obvious, various modifications and variations can be carried out to the above-mentioned example embodiment of the present invention and
Without departing from the spirit and scope of the present invention.Accordingly, it is intended to make the present invention cover in appended claims and its equivalence techniques
Modifications of the present invention and modification in aspects.
Claims (10)
1. a kind of parallel IGBT temperature control equipment, it is characterised in that include：
At least two IGBT, at least two IGBT are connected in parallel to each other；
Temperature sensor, monitors the shell temperature of each at least two IGBT；
Drive circuit, the outfan of the drive circuit are connected to the grid of the IGBT；
Control unit, is connected with the temperature sensor and the drive circuit, and wherein described control unit is according to the shell temperature
To the drive circuit output control signal, so that the drive circuit is adjusted the output to and the drive according to the control signal
The positive grid voltage of the IGBT that the outfan on galvanic electricity road is connected.
2. parallel IGBT temperature control equipment as claimed in claim 1, it is characterised in that each IGBT is driven with
Galvanic electricity road and a temperature sensor for being used to monitor its shell temperature.
3. parallel IGBT temperature control equipment as claimed in claim 2, it is characterised in that described control unit is from all temperature
Sensor receives the shell temperature of each IGBT, calculates the average shell temperature of all IGBT as reference value, and according to each IGBT
The gentle reference value of shell deviation, to each IGBT drive circuit output for the IGBT control signal, institute
Control signal is stated for adjusting the positive grid voltage of each IGBT.
4. parallel IGBT temperature control equipment as claimed in claim 2, it is characterised in that described control unit is also to the drive
Dynamic circuit output is used for the IGBT drive signals of IGBT described on or off.
5. parallel IGBT temperature control equipment as claimed in claim 4, it is characterised in that described control unit is in the same time
To the drive circuit output identical IGBT drive control signal of each IGBT.
6. parallel IGBT temperature control equipment as claimed in claim 1, it is characterised in that the drive circuit is further wrapped
Include：
Forward voltage adjusts circuit, is connected to described control unit to receive the control signal；
Output circuit is driven, and circuit is adjusted with the forward voltage and described control unit is connected, wherein, it is described to drive output
Circuit receives from the IGBT drive signals of described control unit and from the forward voltage output for adjusting circuit, then
Export to the grid of the IGBT.
7. parallel IGBT temperature control equipment as claimed in claim 3, it is characterised in that the positive grid voltage is used to control
The shell temperature of the IGBT is made,
Wherein, when the shell temperature of an IGBT is more than the reference value, described control unit is exported for just raising the IGBT
Control signal to grid voltage is to the drive circuit；
Wherein, when the shell temperature of an IGBT is less than the reference value, described control unit is exported for just reducing the IGBT
Control signal to grid voltage is to the drive circuit.
8. parallel IGBT temperature control equipment as claimed in claim 2, it is characterised in that the temperature sensor is arranged at institute
State the centre of IGBT.
9. a kind of parallel IGBT temperature-controlled process, it is adaptable at least two IGBT being connected in parallel to each other, it is characterised in that include：
Monitor the shell temperature of each at least two IGBT；
The positive grid voltage of IGBT is adjusted the output to according to the shell temperature.
10. parallel IGBT temperature-controlled process as claimed in claim 9, it is characterised in that described to be adjusted according to the shell temperature
The step of exporting the positive grid voltage to IGBT further includes：
The average shell temperature of all IGBT is calculated as reference value；
When the shell temperature of an IGBT is more than the reference value, the positive grid voltage of the IGBT is raised；
When the shell temperature of an IGBT is less than the reference value, the positive grid voltage of the IGBT is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611257758.9A CN106527531B (en) | 2016-12-30 | 2016-12-30 | Parallel IGBT temperature control equipment and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611257758.9A CN106527531B (en) | 2016-12-30 | 2016-12-30 | Parallel IGBT temperature control equipment and method |
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| Publication Number | Publication Date |
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| CN106527531A true CN106527531A (en) | 2017-03-22 |
| CN106527531B CN106527531B (en) | 2019-01-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
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| CN104582044A (en) * | 2013-10-18 | 2015-04-29 | 美的集团股份有限公司 | Control circuit and control method for electromagnetic heating device |
| CN206301224U (en) * | 2016-12-30 | 2017-07-04 | 西门子（上海）电气传动设备有限公司 | Parallel IGBT temperature control equipment |
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2016
- 2016-12-30 CN CN201611257758.9A patent/CN106527531B/en active Active
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| JP2007259576A (en) * | 2006-03-23 | 2007-10-04 | Hitachi Ltd | Drive circuit of switching element |
| CN101978587A (en) * | 2008-03-18 | 2011-02-16 | 丰田自动车株式会社 | Device for driving inverter |
| CN102694531A (en) * | 2011-03-24 | 2012-09-26 | 株式会社电装 | Load drive apparatus and semiconductor switching device drive apparatus |
| CN103660993A (en) * | 2012-08-28 | 2014-03-26 | 本田技研工业株式会社 | Motor driving device |
| CN104582044A (en) * | 2013-10-18 | 2015-04-29 | 美的集团股份有限公司 | Control circuit and control method for electromagnetic heating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112260523A (en) * | 2020-09-17 | 2021-01-22 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
| CN112260523B (en) * | 2020-09-17 | 2021-08-17 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
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| CN106527531B (en) | 2019-01-22 |
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Address after: 200137 No.460, Gaoxiang Ring Road, Gaodong Industrial Park, Pudong New Area, Shanghai Patentee after: Yinmengda (Shanghai) Electrical Transmission Equipment Co.,Ltd. Country or region after: China Address before: 200137 No.460, Gaoxiang Ring Road, Gaodong Industrial Park, Pudong New Area, Shanghai Patentee before: SIEMENS ELECTRICAL DRIVES (SHANGHAI) Ltd. Country or region before: China |