CN106527531B - Parallel IGBT temperature control equipment and method - Google Patents
Parallel IGBT temperature control equipment and method Download PDFInfo
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- CN106527531B CN106527531B CN201611257758.9A CN201611257758A CN106527531B CN 106527531 B CN106527531 B CN 106527531B CN 201611257758 A CN201611257758 A CN 201611257758A CN 106527531 B CN106527531 B CN 106527531B
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- 238000012544 monitoring process Methods 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 2
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- 238000011160 research Methods 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
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Abstract
The present invention provides a kind of parallel IGBT temperature control equipments, comprising: at least two IGBT, at least two IGBT are connected in parallel to each other；Temperature sensor, the shell temperature of each of at least two IGBT of monitoring；The output end of driving circuit, driving circuit is connected to the grid of IGBT；Control unit is connect with temperature sensor and driving circuit, and wherein control unit exports control signal to driving circuit according to shell temperature, so that driving circuit exports the positive grid voltage for the IGBT being connected to the output end with driving circuit according to control Signal Regulation.In addition, the present invention also provides a kind of parallel IGBT temprature control methods.
Description
Technical field
The present invention relates to IGBT temperature control technology more particularly to a kind of parallel IGBT temperature control equipment and accordingly
Parallel IGBT temprature control method.
Background technique
With the development of power electronic technology, and single IGBT (Insulated Gate Bipolar Transistor, absolutely
Edge grid bipolar junction transistor) levels of current persistently promoted, but still be unable to satisfy the demand of large-capacity transducer.In view of IGBT
Reliability, economy and other factors, select the IGBT of highest level be not sometimes be best solution.Preferably side
Method is the current requirements for meeting single inverter using multiple IGBT parallel technologies.
The temperature of IGBT is the key factor in parallel IGBT use process.Following factor will cause parallel IGBT
Uneven high temperature:
The difference of 1.IGBT inherent parameters；
2. the difference of external circuit parameter；
The difference of 3.IGBT radiating condition.
This uneven high temperature of parallel IGBT limits the output electric current of IGBT, and influences the static state and dynamic of IGBT
Flow.Therefore, IGBT temperature how is controlled as a very important research direction in IGBT parallel technology field.
Summary of the invention
The invention proposes a kind of parallel IGBT temperature control equipment and corresponding parallel IGBT temprature control methods.It is special
It is not that the present invention balances the temperature of parallel IGBT by adjusting the positive grid voltage of IGBT.Of the invention is basic
Concept is: the positive grid voltage of IGBT can influence the collector emitter voltage drop of IGBT, and then influence the shell of IGBT
Temperature.
According to an aspect of the invention, there is provided a kind of parallel IGBT temperature control equipment, comprising:
At least two IGBT, at least two IGBT are connected in parallel to each other；
Temperature sensor monitors the shell temperature of each of described at least two IGBT；
Driving circuit, the output end of the driving circuit are connected to the grid of the IGBT；
Control unit is connect with the temperature sensor and the driving circuit, and wherein described control unit is according to
Shell temperature to the driving circuit export control signal so that the driving circuit according to the control Signal Regulation export to institute
State the positive grid voltage for the IGBT that the output end of driving circuit is connected.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, each IGBT has a drive
Dynamic circuit and one are for monitoring the temperature sensor of its shell temperature.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is from all temperature
Sensor receives the shell temperature of each IGBT, calculates the average shell temperature of all IGBT as a reference value, and according to each IGBT
The mild a reference value of shell deviation, the control signal of the IGBT, institute are directed to the output of the driving circuit of each IGBT
State the positive grid voltage that control signal is used to adjust each IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is also to the drive
IGBT driving signal of the dynamic circuit output for IGBT described on or off.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, described control unit is in the same time
Identical IGBT driving control signal is exported to the driving circuit of each IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the driving circuit further comprises:
Forward voltage adjusts circuit, is connected to described control unit to receive the control signal；
Output circuit is driven, circuit is adjusted with the forward voltage and described control unit is connected, wherein the driving
Output circuit receives the IGBT driving signal from described control unit and adjusts the output of circuit from the forward voltage,
Then it exports to the grid of the IGBT.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the forward direction grid voltage is for controlling
The shell temperature of the IGBT is made,
Wherein, when the shell temperature of an IGBT is greater than a reference value, described control unit is exported for increasing the IGBT
Positive grid voltage control signal to the driving circuit；
Wherein, when the shell temperature of an IGBT is less than a reference value, described control unit is exported for reducing the IGBT
Positive grid voltage control signal to the driving circuit.
According to one embodiment, in above-mentioned parallel IGBT temperature control equipment, the temperature sensor is set to institute
State the centre of IGBT.
According to another aspect of the present invention, a kind of parallel IGBT temprature control method is provided, suitable for what is be connected in parallel to each other
At least two IGBT, comprising:
Monitor the shell temperature of each of described at least two IGBT；
The positive grid voltage of IGBT is adjusted the output to according to the shell temperature.
It is described defeated according to shell temperature adjusting in above-mentioned parallel IGBT temprature control method according to one embodiment
Further comprise to the step of positive grid voltage of IGBT out:
The average shell temperature of all IGBT is calculated as a reference value；
When the shell temperature of an IGBT is greater than a reference value, the positive grid voltage of the IGBT is increased；
When the shell temperature of an IGBT is less than a reference value, the positive grid voltage of the IGBT is reduced.
It should be appreciated that the general description and the following detailed description more than present invention be all it is exemplary and illustrative,
And it is intended that the present invention as claimed in claim provides further explanation.
Detailed description of the invention
It is to provide further understanding of the invention including attached drawing, they are included and constitute part of this application,
Attached drawing shows the embodiment of the present invention, and plays the role of explaining the principle of the invention together with this specification.In attached drawing:
Fig. 1 is the circuit block diagram of parallel IGBT temperature control equipment according to an embodiment of the invention.
Fig. 2 is the circuit block diagram of driving circuit according to an embodiment of the invention.
Fig. 3 is the flow chart of parallel IGBT temprature control method according to an embodiment of the invention.
Fig. 4 is the flow chart of parallel IGBT temprature control method according to another embodiment of the invention.
Description of symbols:
1 parallel IGBT temperature control equipment
2 IGBT
3 temperature sensors
4 driving circuits
5 control units
6 forward voltages adjust circuit
7 driving output circuits
Specific embodiment
The embodiment of the present invention is described with detailed reference to attached drawing now.Now with detailed reference to preferred implementation of the invention
Example, its example is shown in the drawings.In the case of any possible, phase will be indicated using identical label in all the appended drawings
Same or similar part.In addition, although term used in the present invention is selected from public term, this
Some terms mentioned in description of the invention may be that applicant is judged to carry out selection as his or her, and detailed meanings are at this
Illustrate in the relevant portion of the description of text.Furthermore, it is desirable that not only by used actual terms, and be also to by each
Meaning that term is contained understands the present invention.
Discuss basic principle and preferred embodiment of the invention in more detail with reference to Fig. 1 and Fig. 2.As shown, this hair
Bright parallel IGBT temperature control equipment 1 specifically includes that IGBT 2, temperature sensor 3, driving circuit 4 and control unit 5.
As shown in Figure 1, at least two IGBT 2 are connected in parallel to each other, to meet the requirement of high current.
Temperature sensor 3 is set at IGBT 2, such as at the centre of each IGBT 2, to monitor each
The shell temperature of IGBT 2.As an example, a temperature sensor 3 can be respectively set at each IGBT 2, such as Fig. 1 institute
The embodiment shown is such.Alternatively, including upper and lower two IGBT in certain half-bridge modules, a temperature is set in this half-bridge module
Degree sensor can also measure the temperature of this upper and lower two IGBT simultaneously.Therefore, the quantity of temperature sensor 3 of the invention is simultaneously
The quantity of nonessential same IGBT 2 is consistent, it is only necessary to guarantee to monitor the shell Wen Jike of each IGBT 2.
In addition, the output end of driving circuit 4 is connected to the grid of IGBT 2, to adjust the positive grid electricity of the IGBT 2
Press and control the on or off of the IGBT 2.
Control unit 5 is connect with temperature sensor 3 and driving circuit 4.Control unit 5 is received first from temperature sensor
3 feedback (the shell temperature monitored), and control signal Vgiven can be exported to driving circuit 4 according to shell temperature, so that driving
Circuit 4 adjusts the output to the forward direction for the IGBT 2 being connected with the output end of the driving circuit 4 according to control signal Vgiven
Grid voltage.
Based on foregoing circuit structure, so that it may adjust the positive grid voltage of IGBT 2 to adjust the collector-of IGBT 2
Emitter voltage drop, and then the shell temperature of IGBT 2 is adjusted, finally make the temperature of parallel IGBT realize balance.
In the embodiment shown in fig. 1, each IGBT 2 is with a driving circuit 4 and one for monitoring it
The temperature sensor 3 of shell temperature.In this way, control unit 5 can receive the shell temperature of each IGBT 2 from all temperature sensors 3,
The average shell temperature of all IGBT 2 is calculated as a reference value, and according to the inclined of the mild said reference value of the shell of each IGBT 2
Difference is directed to the control signal Vgiven of the IGBT 2 to the output of the driving circuit 4 of each IGBT 2, controls signal Vgiven
For adjusting the positive grid voltage of each IGBT 2.So a closed-loop control is established for each IGBT 2.
For example, control unit 5 is exported for increasing the IGBT's 2 when the shell temperature of some IGBT 2 is greater than a reference value
The control signal Vgiven of positive grid voltage is to driving circuit 4；And when the shell temperature of an IGBT 2 is less than a reference value, control
Unit 5 processed output for reducing the positive grid voltage of the IGBT 2 control signal Vgiven to driving circuit 4.Because
The positive grid voltage of IGBT 2 is lower, then the collector emitter voltage drop of the IGBT 2 is higher at a given current, on the contrary
?.It is assumed that the electric current during the conducting phase of IGBT be it is constant, then following equation can be used for calculating conduction loss Pcon:
Pcon=Uce*Ic, wherein Uce is collector emitter voltage drop and Ic is above-mentioned constant electric current.In addition, passing through adjusting
The positive grid voltage of IGBT can also change the switching loss of IGBT, but the influence is very small, can ignore.
In addition, control unit 5 can also export the IGBT driving signal for being used on or off IGBT to driving circuit 4
(IGBT drive signal).Go to Fig. 2, driving circuit 4 may further include: forward voltage adjusts circuit 6 and drives defeated
Circuit 7 out.Forward voltage adjusts circuit 6 and is connected to control unit 5 to receive control signal Vgiven.Drive output circuit 7 with
Forward voltage adjusts circuit 6 and control unit 5 is separately connected.The driving output circuit 7 receives the IGBT from control unit 5 and drives
Dynamic signal (IGBT drive signal) and the output that circuit 6 is adjusted from forward voltage, then exports together to IGBT 2
Grid.For example, the IGBT drive control letter that control unit 5 is exported in the same time to the driving circuit 4 of each IGBT 2
It number can be identical, but the control signal Vgiven of output of same time is then different and different from each other because of above-mentioned deviation.
Fig. 3 is the flow chart of parallel IGBT temprature control method according to an embodiment of the invention.The parallel IGBT
Temprature control method is suitable at least two IGBT being connected in parallel to each other, and may comprise steps of:
S1: the shell temperature of each of at least two IGBT of monitoring；
S2: the positive grid voltage of IGBT is adjusted the output to according to shell temperature.
More specifically, in the embodiment shown in fig. 4, step S2 may further include:
S2-1: the average shell temperature of all IGBT is calculated as a reference value；
S2-2: when the shell temperature of an IGBT is greater than a reference value, the positive grid voltage of the IGBT is increased；
S2-3: when the shell temperature of an IGBT is less than a reference value, the positive grid voltage of the IGBT is reduced.
To sum up, parallel IGBT temperature control equipment proposed by the invention and method at least have following advantage:
1) present invention is easy to make the equalized temperature of parallel IGBT, to promote the reliability of parallel IGBT circuit；
2) compared with other solutions of the prior art, cost of implementation of the invention is lower；
3) higher performance is easily obtained using frequency converter of the invention.
Those skilled in the art can be obvious, the above exemplary embodiments of the invention can be carry out various modifications and modification and
Without departing from the spirit and scope of the present invention.Accordingly, it is intended to which present invention covering is made to fall in the appended claims and its equivalence techniques
Modifications of the present invention and modification in aspects.
Claims (5)
1. a kind of parallel IGBT temperature control equipment characterized by comprising
At least two IGBT, at least two IGBT are connected in parallel to each other；
Temperature sensor monitors the shell temperature of each of described at least two IGBT；
Driving circuit, the output end of the driving circuit are connected to the grid of the IGBT；
Control unit is connect with the temperature sensor and the driving circuit, and wherein described control unit is according to the shell temperature
To the driving circuit export control signal so that the driving circuit according to the control Signal Regulation export to the drive
The positive grid voltage for the IGBT that the output end of dynamic circuit is connected,
Wherein, each IGBT has a driving circuit and one for monitoring the temperature sensor of its shell temperature,
Wherein, described control unit receives the shell temperature of each IGBT from all temperature sensors, calculates being averaged for all IGBT
Shell temperature is as a reference value, and the driving according to the deviation of the mild a reference value of the shell of each IGBT, to each IGBT
Circuit output is directed to the control signal of the IGBT, and the control signal is used to adjust the positive grid voltage of each IGBT；
Wherein, IGBT of the described control unit also to driving circuit output for IGBT described on or off drives letter
Number；
Wherein, described control unit exports identical IGBT drive control letter to the driving circuit of each IGBT in the same time
Number.
2. parallel IGBT temperature control equipment as described in claim 1, which is characterized in that the driving circuit further wraps
It includes:
Forward voltage adjusts circuit, is connected to described control unit to receive the control signal；
Output circuit is driven, circuit is adjusted with the forward voltage and described control unit is connected, wherein the driving output
Circuit receives the IGBT driving signal from described control unit and adjusts the output of circuit from the forward voltage, then
It exports to the grid of the IGBT.
3. parallel IGBT temperature control equipment as described in claim 1, which is characterized in that the forward direction grid voltage is for controlling
The shell temperature of the IGBT is made,
Wherein, when the shell temperature of an IGBT is greater than a reference value, described control unit is exported for increasing the IGBT just
To the control signal of grid voltage to the driving circuit；
Wherein, when the shell temperature of an IGBT is less than a reference value, described control unit is exported for reducing the IGBT just
To the control signal of grid voltage to the driving circuit.
4. parallel IGBT temperature control equipment as described in claim 1, which is characterized in that the temperature sensor is set to institute
State the centre of IGBT.
5. a kind of parallel IGBT temprature control method, suitable at least two IGBT being connected in parallel to each other characterized by comprising
Monitor the shell temperature of each of described at least two IGBT；
The positive grid voltage of IGBT is adjusted the output to according to the shell temperature, wherein described adjust the output to according to the shell temperature
The step of positive grid voltage of IGBT, further comprises:
The average shell temperature of all IGBT is calculated as a reference value；
When the shell temperature of an IGBT is greater than a reference value, the positive grid voltage of the IGBT is increased；
When the shell temperature of an IGBT is less than a reference value, the positive grid voltage of the IGBT is reduced；
Wherein, the positive grid voltage that IGBT is adjusted the output to according to the shell temperature further comprises:
For each IGBT, control signal is generated according to a reference value and the shell temperature of the IGBT, according to the control signal
Adjust the output to the positive grid voltage of the IGBT, wherein the control signal further includes for IGBT described on or off
IGBT driving signal, and the corresponding control signal of same time difference IGBT includes identical IGBT driving
Signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611257758.9A CN106527531B (en) | 2016-12-30 | 2016-12-30 | Parallel IGBT temperature control equipment and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611257758.9A CN106527531B (en) | 2016-12-30 | 2016-12-30 | Parallel IGBT temperature control equipment and method |
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| CN106527531A CN106527531A (en) | 2017-03-22 |
| CN106527531B true CN106527531B (en) | 2019-01-22 |
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| CN112260523B (en) * | 2020-09-17 | 2021-08-17 | 深圳市禾望电气股份有限公司 | Parallel current sharing system and method of SiC power device and power electronic equipment |
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|---|---|---|---|---|
| CN101978587A (en) * | 2008-03-18 | 2011-02-16 | 丰田自动车株式会社 | Device for driving inverter |
| CN102694531A (en) * | 2011-03-24 | 2012-09-26 | 株式会社电装 | Load drive apparatus and semiconductor switching device drive apparatus |
| CN103660993A (en) * | 2012-08-28 | 2014-03-26 | 本田技研工业株式会社 | Motor driving device |
| CN104582044A (en) * | 2013-10-18 | 2015-04-29 | 美的集团股份有限公司 | Control circuit and control method for electromagnetic heating device |
| CN206301224U (en) * | 2016-12-30 | 2017-07-04 | 西门子（上海）电气传动设备有限公司 | Parallel IGBT temperature control equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4816182B2 (en) * | 2006-03-23 | 2011-11-16 | 株式会社日立製作所 | Switching element drive circuit |
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2016
- 2016-12-30 CN CN201611257758.9A patent/CN106527531B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978587A (en) * | 2008-03-18 | 2011-02-16 | 丰田自动车株式会社 | Device for driving inverter |
| CN102694531A (en) * | 2011-03-24 | 2012-09-26 | 株式会社电装 | Load drive apparatus and semiconductor switching device drive apparatus |
| CN103660993A (en) * | 2012-08-28 | 2014-03-26 | 本田技研工业株式会社 | Motor driving device |
| CN104582044A (en) * | 2013-10-18 | 2015-04-29 | 美的集团股份有限公司 | Control circuit and control method for electromagnetic heating device |
| CN206301224U (en) * | 2016-12-30 | 2017-07-04 | 西门子（上海）电气传动设备有限公司 | Parallel IGBT temperature control equipment |
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Address after: 200137 No.460, Gaoxiang Ring Road, Gaodong Industrial Park, Pudong New Area, Shanghai Patentee after: Yinmengda (Shanghai) Electrical Transmission Equipment Co.,Ltd. Country or region after: China Address before: 200137 No.460, Gaoxiang Ring Road, Gaodong Industrial Park, Pudong New Area, Shanghai Patentee before: SIEMENS ELECTRICAL DRIVES (SHANGHAI) Ltd. Country or region before: China |