CN113141106A - Protection type MOS manages drive circuit that connects in parallel - Google Patents
Protection type MOS manages drive circuit that connects in parallel Download PDFInfo
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- CN113141106A CN113141106A CN202110549664.3A CN202110549664A CN113141106A CN 113141106 A CN113141106 A CN 113141106A CN 202110549664 A CN202110549664 A CN 202110549664A CN 113141106 A CN113141106 A CN 113141106A
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- limiting resistor
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- 239000003990 capacitor Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to a MOS (metal oxide semiconductor) tube parallel driving circuit, in particular to a protective MOS tube parallel driving circuit, which comprises an MOS tube parallel circuit, wherein a filter circuit and a clamping diode are connected between a grid electrode and a source electrode of an MOS tube; the technical scheme provided by the invention can effectively overcome the defect that the fault MOS tube cannot be cut off and isolated from the MOS tube parallel circuit in time in the prior art.
Description
Technical Field
The invention relates to an MOS (metal oxide semiconductor) tube parallel driving circuit, in particular to a protective MOS tube parallel driving circuit.
Background
The MOS Transistor is a Metal Oxide Semiconductor field effect Transistor (Metal Oxide Semiconductor field effect Transistor). With the development of electronic power technology, power MOSFETs are increasingly widely used due to their good high-frequency performance, low switching loss, high input impedance, low driving power, simple driving circuit, and the like. In many application occasions with low voltage and high power, such as an electric tricycle, a small electric forklift and the like, in order to meet the current requirement, a method of connecting MOS tubes in parallel is mostly adopted.
However, when the MOS transistors are used in parallel, the current sharing problem is not solved effectively, so that a single MOS transistor may be damaged due to uneven current, multiple parallel MOS transistors are directly connected and damaged, and damage to one group of MOS transistors may cause more associated faults. Meanwhile, when the MOS tube is used, the short-circuit protection function of the MOS tube is rarely added, even if the protection circuit of the MOS tube is added, the protection circuit can not play an effective role due to misjudgment or untimely reaction on the protection state, a plurality of parallel MOS tubes are easy to be directly connected and damaged, and the research and development cost is greatly improved.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects in the prior art, the invention provides a protective MOS tube parallel driving circuit which can effectively overcome the defect that the fault MOS tube cannot be cut off and isolated from the MOS tube parallel circuit in time in the prior art.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme:
a protective MOS tube parallel driving circuit comprises an MOS tube parallel circuit, wherein a filter circuit and a clamping diode are connected between a grid electrode and a source electrode of an MOS tube, and a current limiting resistor is connected to the grid electrode of the MOS tube so as to cut off and isolate the MOS tube when a high-voltage level enters the grid electrode of the MOS tube.
Preferably, the current-limiting resistor includes a current-limiting resistor R10, a current-limiting resistor R11, and a current-limiting resistor R12, and the current-limiting resistor R10, the current-limiting resistor R11, and the current-limiting resistor R12 are respectively connected to the gate of the MOS transistor.
Preferably, the clamping diode comprises a clamping diode D2, and the clamping diode D2 is connected in parallel between the gate and the source of the MOS tube.
Preferably, the filter circuit comprises a resistor R80 and a capacitor C16, and the resistor R80 and the capacitor C16 are connected in parallel between the gate and the source of the MOS transistor.
Preferably, the gate and the source of the MOS transistor are respectively connected together to form a parallel circuit of MOS transistors.
(III) advantageous effects
Compared with the prior art, according to the protective MOS tube parallel driving circuit provided by the invention, when a breakdown fault occurs to one MOS tube in the MOS tube parallel circuit, a high-voltage level enters the grid electrode of the MOS tube, the clamping diode can clamp the voltage on a safe level, at the moment, the corresponding current-limiting resistor on the MOS tube is instantly blown off due to the flowing of a large current, and then a fault loop where the MOS tube is located is cut off and isolated, so that the purpose of protecting other MOS tubes in the MOS tube parallel circuit is achieved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a circuit diagram of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A protection type MOS tube parallel driving circuit comprises an MOS tube parallel circuit, wherein a filter circuit and a clamping diode are connected between a grid electrode and a source electrode of an MOS tube, and a current limiting resistor is connected to the grid electrode of the MOS tube so as to cut off and isolate the MOS tube when a high-voltage level enters the grid electrode of the MOS tube.
The current limiting resistor comprises a current limiting resistor R10, a current limiting resistor R11 and a current limiting resistor R12, and the current limiting resistor R10, the current limiting resistor R11 and the current limiting resistor R12 are respectively connected with the grid electrode of the MOS tube.
The clamping diode comprises a clamping diode D2, and the clamping diode D2 is connected between the grid electrode and the source electrode of the MOS tube in parallel.
The filter circuit comprises a resistor R80 and a capacitor C16, wherein the resistor R80 and the capacitor C16 are connected between the grid and the source of the MOS tube in parallel.
The grid electrode and the source electrode of the MOS tube are respectively connected together to form an MOS tube parallel circuit.
In the technical solution of the present application, as shown in fig. 1, CON1 is a gate input signal of an MOS transistor, resistor R80 and capacitor C16 are anti-interference circuits of the gate input signal, and clamp diode D2, current-limiting resistor R10, current-limiting resistor R11, and current-limiting resistor R12 are key elements in a protection type parallel MOS transistor driving circuit. The clamping diode D2 is a voltage limiting device capable of instantly absorbing large current, the current limiting resistor R10, the current limiting resistor R11 and the current limiting resistor R12 are low-power current limiting resistors connected in series with the grid of each MOS transistor, and the group of MOS transistors Q10, Q11 and Q12 are connected in parallel.
When a certain MOS tube in the same group breaks down, a high-voltage level can enter the grid electrode of the MOS tube, and if four devices, namely the clamping diode D2, the current-limiting resistor R10, the current-limiting resistor R11 and the current-limiting resistor R12 are not arranged, the high-voltage level entering the grid electrode of the MOS tube can be quickly added to the grid electrodes of other MOS tubes in the same group, so that the associated damage is caused.
The four devices of the clamping diode D2, the current limiting resistor R10, the current limiting resistor R11 and the current limiting resistor R12 have the functions of: supposing that when a high voltage level is connected in series with the gate of the Q10, the clamping diode D2 clamps the voltage of the CON1 at a safe level, and at this time, the current-limiting resistor R10 is instantly blown off due to a large current flowing, so that the gate of the Q10 is disconnected from other MOS transistors, thereby achieving the purpose of protecting the Q11 and the Q12 in the same group.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (5)
1. The utility model provides a protection type MOS manages drive circuit that connects in parallel which characterized in that: the high-voltage power supply comprises an MOS tube parallel circuit, wherein a filter circuit and a clamping diode are connected between a grid electrode and a source electrode of the MOS tube, and a current-limiting resistor is connected to the grid electrode of the MOS tube so as to cut off and isolate the MOS tube when a high-voltage level enters the grid electrode of the MOS tube.
2. The protection type MOS tube parallel driving circuit according to claim 1, wherein: the current-limiting resistor comprises a current-limiting resistor R10, a current-limiting resistor R11 and a current-limiting resistor R12, and the current-limiting resistor R10, the current-limiting resistor R11 and the current-limiting resistor R12 are respectively connected with the grid electrode of the MOS tube.
3. The protection type MOS tube parallel driving circuit according to claim 2, wherein: the clamping diode comprises a clamping diode D2, and the clamping diode D2 is connected between the gate and the source of the MOS tube in parallel.
4. The protection type MOS tube parallel driving circuit according to claim 3, wherein: the filter circuit comprises a resistor R80 and a capacitor C16, wherein the resistor R80 and the capacitor C16 are connected between the grid and the source of the MOS tube in parallel.
5. The protection type MOS tube parallel driving circuit according to any one of claims 1-4, wherein: and the grid electrode and the source electrode of the MOS tube are respectively connected together to form an MOS tube parallel circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110549664.3A CN113141106A (en) | 2021-05-20 | 2021-05-20 | Protection type MOS manages drive circuit that connects in parallel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110549664.3A CN113141106A (en) | 2021-05-20 | 2021-05-20 | Protection type MOS manages drive circuit that connects in parallel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113141106A true CN113141106A (en) | 2021-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110549664.3A Pending CN113141106A (en) | 2021-05-20 | 2021-05-20 | Protection type MOS manages drive circuit that connects in parallel |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013139373A1 (en) * | 2012-03-20 | 2013-09-26 | Abb Technology Ltd | Switch module and associated method |
| CN105939152A (en) * | 2015-03-05 | 2016-09-14 | 通用电气能源能量变换技术有限公司 | Circuit arrangement and method for gate-controlled power semiconductor devices |
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN206533299U (en) * | 2017-02-17 | 2017-09-29 | 江西江铃集团新能源汽车有限公司 | Power driving circuit |
| CN111697800A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Drive circuit suitable for SiC MOSFET is parallelly connected |
| CN214544108U (en) * | 2021-05-20 | 2021-10-29 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
-
2021
- 2021-05-20 CN CN202110549664.3A patent/CN113141106A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013139373A1 (en) * | 2012-03-20 | 2013-09-26 | Abb Technology Ltd | Switch module and associated method |
| CN105939152A (en) * | 2015-03-05 | 2016-09-14 | 通用电气能源能量变换技术有限公司 | Circuit arrangement and method for gate-controlled power semiconductor devices |
| CN206533299U (en) * | 2017-02-17 | 2017-09-29 | 江西江铃集团新能源汽车有限公司 | Power driving circuit |
| CN106972737A (en) * | 2017-04-20 | 2017-07-21 | 天索（苏州）控制技术有限公司 | With the MOSFET parallel driver circuits for flowing protection |
| CN111697800A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Drive circuit suitable for SiC MOSFET is parallelly connected |
| CN214544108U (en) * | 2021-05-20 | 2021-10-29 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
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