CN206533299U - Power driving circuit - Google Patents
Power driving circuit Download PDFInfo
- Publication number
- CN206533299U CN206533299U CN201720145773.8U CN201720145773U CN206533299U CN 206533299 U CN206533299 U CN 206533299U CN 201720145773 U CN201720145773 U CN 201720145773U CN 206533299 U CN206533299 U CN 206533299U
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- Prior art keywords
- bridge arm
- oxide
- metal
- circuit
- arm circuit
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- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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Abstract
The utility model provides a kind of power driving circuit, including bridge arm circuit in structure identical and lower bridge arm circuit, upper bridge arm circuit and the serial connection of lower bridge arm circuit, and the midpoint of connection is the signal output part of power driving circuit, upper bridge arm circuit and lower bridge arm circuit include a PWM inputs and the multiple metal-oxide-semiconductors being connected in parallel, PWM inputs are included just, negative pole, the grid of each metal-oxide-semiconductor is connected with the positive pole of corresponding PWM inputs, the source electrode of each metal-oxide-semiconductor is connected with the negative pole of corresponding PWM inputs, the drain electrode of each metal-oxide-semiconductor in upper bridge arm circuit is connected by a connection circuit with the negative pole of the PWM inputs in lower bridge arm circuit, the drain electrode of each metal-oxide-semiconductor in lower bridge arm circuit is connected with the negative pole of the PWM inputs in upper bridge arm circuit.Power driving circuit in the utility model, because metal-oxide-semiconductor has, cost is low, switching speed is fast, easily in parallel, the required low advantage of driving power, and then reduce the holistic cost of power driving circuit.
Description
Technical field
The utility model is related to technical field of motors, more particularly to a kind of power driving circuit.
Background technology
With the continuous progress of magnetic material, power electronic devices and digital processing unit technology, motor has also been obtained rapidly
Development, motor is the important motivity source in national product and people's daily life, has very important status, motor is usual
It is required for setting drive circuit, to complete the startup of motor.
Among prior art, the motor-drive circuit used at present, generally using insulated gate bipolar transistor
(Insulated Gate Bipolar Transistor, abbreviation IGBT) or SPM (Intelligent Power
Module, abbreviation IPM) it is used as power device, the motor driven systems of such as electric automobile, and IGBT and IPM cost is very
Height, can virtually increase the design cost of motor, while the rated voltage and load current value required for IGBT and IPM are all very
Height, so that the driving power required for IGBT and IPM is very high, causes the electric energy of whole drive circuit to damage very high,
The design concept of energy-conservation is not met.
Utility model content
Based on this, the purpose of this utility model is to provide a kind of low power driving circuit of cost.
Bridge arm circuit and lower bridge arm circuit on a kind of power driving circuit, including structure identical, the upper bridge arm circuit
And the lower bridge arm circuit serial connection, and the midpoint of connection is the signal output part of the power driving circuit, the upper bridge
Arm circuit and the lower bridge arm circuit include a PWM inputs and the multiple metal-oxide-semiconductors being connected in parallel, the PWM inputs bag
Include positive and negative electrode；
The grid of each metal-oxide-semiconductor is electrically connected with the positive pole of the corresponding PWM inputs, each metal-oxide-semiconductor
The negative pole of source electrode and the corresponding PWM inputs be electrically connected with, the leakage of each metal-oxide-semiconductor in the upper bridge arm circuit
Pole is electrically connected with by the negative pole of a connection circuit and the PWM inputs in the lower bridge arm circuit, the lower bridge arm electricity
The drain electrode of each metal-oxide-semiconductor on road is electrically connected with the negative pole of the PWM inputs in the upper bridge arm circuit.
Above-mentioned power driving circuit, due to using the metal-oxide-semiconductor as power device, and the cost of metal-oxide-semiconductor is low, and remote low
The IGBT and IPM being previously mentioned among prior art, so that the power driving circuit has the advantages that cost is low, together
When metal-oxide-semiconductor also have that switching speed is fast, easy in parallel, the required low advantage of driving power, the power driving circuit can be reduced
Design difficulty and power attenuation, create a further reduction the design cost of the power driving circuit.Moreover, due to every
The grid of the individual metal-oxide-semiconductor, source electrode correspondence are connected with corresponding positive and negative electrode, each metal-oxide-semiconductor in the upper bridge arm circuit
Drain electrode be connected by the connection circuit with the negative pole in the lower bridge arm circuit, described in each in the lower bridge arm circuit
The drain electrode of metal-oxide-semiconductor is connected with the negative pole of the upper bridge arm circuit so that the current sharing of each metal-oxide-semiconductor is good, bears high current
Ability becomes strong, and it expands power and uses and very big obstacle is not present, it is ensured that the high reliability of power circuit.
Further, the grid of each metal-oxide-semiconductor passes through positive pole of the current-limiting resistance with the corresponding PWM inputs
It is electrically connected with.
Further, the span of the current-limiting resistance is the Ω of 5 Ω~70.
Further, the upper bridge arm circuit and the lower bridge arm circuit respectively further comprise at least one filter capacitor, often
Individual filter capacitor correspondence is connected in parallel with a current-limiting resistance, and be connected to the corresponding PWM inputs just,
Between negative pole, to constitute a RC filter circuits.
Further, the upper bridge arm circuit and the quantity span of the metal-oxide-semiconductor in the lower bridge arm circuit are 7
To 12.
Further, the upper bridge arm circuit and the lower bridge arm circuit bridge arm respectively further comprise a TVS pipe, the TVS
Pipe is connected between the positive and negative electrode of the corresponding PWM inputs.
Further, the upper bridge arm circuit and the lower bridge arm circuit bridge arm respectively further comprise a shunt resistance, each
The shunt resistance is connected between the positive and negative electrode of the corresponding PWM inputs.
Further, the connection circuit includes at least two noninductive electric capacity, and all noninductive electric capacity are each other
Connection side by side, one end of each noninductive electric capacity and the drain electrode of each metal-oxide-semiconductor in the upper bridge arm circuit electrically connect
Connect, the negative pole of the other end and the PWM inputs in the lower bridge arm circuit is electrically connected with.
Further, the grid of each metal-oxide-semiconductor in the upper bridge arm circuit be electrically connected with each other after with it is corresponding
The positive pole of the PWM inputs is electrically connected with, and the source electrode of each metal-oxide-semiconductor in the upper bridge arm circuit is electrically connected with each other
It is electrically connected with afterwards with the negative pole of the corresponding PWM inputs, the drain electrode phase of each metal-oxide-semiconductor in the upper bridge arm circuit
It is electrically connected with after being mutually electrically connected with the connection circuit.
Further, the grid of each metal-oxide-semiconductor in the lower bridge arm circuit be electrically connected with each other after with it is corresponding
The positive pole of the PWM inputs is electrically connected with, and the source electrode of each metal-oxide-semiconductor in the lower bridge arm circuit is electrically connected with each other
It is electrically connected with afterwards with the negative pole of the corresponding PWM inputs, the drain electrode phase of each metal-oxide-semiconductor in the lower bridge arm circuit
Negative pole after being mutually electrically connected with the PWM inputs in the upper bridge arm circuit is electrically connected with.
Brief description of the drawings
Fig. 1 be the utility model first embodiment in power driving circuit electrical block diagram.
Fig. 2 is the enlarged diagram at I in Fig. 1.
Fig. 3 be the utility model second embodiment in power driving circuit electrical block diagram.
Main element symbol description：
| Upper bridge arm circuit | 10 | Lower bridge arm circuit | 20 |
| Connect circuit | 30 | PWM inputs | 11 |
| Metal-oxide-semiconductor | 12 | Positive pole | 111 |
| Negative pole | 112 | Noninductive electric capacity | 31 |
| Current-limiting resistance | 13 | Filter capacitor | 14 |
| TVS pipe | 15 | Shunt resistance | 16 |
| Signal output part | 40 |
Following embodiment will further illustrate the utility model with reference to above-mentioned accompanying drawing.
Embodiment
For the ease of understanding the utility model, the utility model is more fully retouched below with reference to relevant drawings
State.Some embodiments of the present utility model are given in accompanying drawing.But, the utility model can come real in many different forms
It is existing, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is made to public affairs of the present utility model
Open content more thorough comprehensive.
It should be noted that when element is referred to as " being fixedly arranged on " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left side ",
" right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein " and/or " include
The arbitrary and all combination of one or more related Listed Items.
Fig. 1 to Fig. 2 is referred to, the power driving circuit in the utility model first embodiment, including upper bridge arm is shown
Circuit 10, lower bridge arm circuit 20 and connection circuit 30.
The upper bridge arm circuit 10 is identical with the structure of the lower bridge arm circuit 20 and is connected in series, and the midpoint of connection is
The signal output part 40 of the power driving circuit, the power driving circuit can pass through the signal output part 40 and motor electricity
Property connection, operated with motor.The upper bridge arm circuit 10 and the lower bridge arm circuit 20 include a PWM (Pulse
Width Modulation, also referred to as pulse width modulation) input 11 and multiple metal-oxide-semiconductors 12 for being connected in parallel.The PWM inputs
All metal-oxide-semiconductors 12 that end 11 is included in positive pole 111 and negative pole 112, the upper bridge arm circuit 10 are connected in parallel with each other right
Between the positive pole 111 and negative pole 112 answered, that is, the PWM inputs 11 in bridge arm circuit 10 are connected in parallel with each other on described
Positive pole 111 and negative pole 112 between.All metal-oxide-semiconductors 12 in the lower bridge arm circuit 20 are connected in parallel with each other in correspondence
Positive pole 111 and negative pole 112 between, that is, the PWM inputs 11 being connected in parallel with each other in the lower bridge arm circuit 20
Between positive pole 111 and negative pole 112.Among the present embodiment, the institute in the upper bridge arm circuit 10 and the lower bridge arm circuit 20
The quantity for stating metal-oxide-semiconductor 12 is 7, and among other embodiments, can arrange other quantity according to actual circuit requirements
The metal-oxide-semiconductor 12, but the quantity value model of the upper bridge arm circuit 10 and the metal-oxide-semiconductor 12 in the lower bridge arm circuit 20
Enclose and should be 7 to 12.
Specifically, the grid of each metal-oxide-semiconductor 12 is electrically connected with the positive pole 111 of the corresponding PWM inputs 11,
The source electrode of each metal-oxide-semiconductor 12 is electrically connected with the negative pole 112 of the corresponding PWM inputs 11, i.e., same bridge arm circuit
On the metal-oxide-semiconductor 12 grid, source electrode correspondence be electrically connected with the positive pole 111 in itself bridge arm circuit, negative pole 112.It is described
The drain electrode of each metal-oxide-semiconductor 12 in upper bridge arm circuit 10 described in one by connecting in circuit 30 and the lower bridge arm circuit 20
The negative poles 112 of the PWM inputs 11 be electrically connected with, the drain electrode of each metal-oxide-semiconductor 12 in the lower bridge arm circuit 20
It is electrically connected with the negative pole 112 of the PWM inputs 11 in the upper bridge arm circuit 10.
Further, the grid of each metal-oxide-semiconductor 12 in the upper bridge arm circuit 10 be electrically connected with each other after with it is right
The positive pole 111 for the PWM inputs 11 answered is electrically connected with, i.e., be electrically connected with the positive pole 111 in itself bridge arm circuit.It is described
The source electrode of each metal-oxide-semiconductor 12 in upper bridge arm circuit 10 is electrically connected with each other rear with the corresponding PWM inputs 11
Negative pole 112 is electrically connected with, i.e., be electrically connected with the negative pole 112 in itself bridge arm circuit.It is each in the upper bridge arm circuit 10
The drain electrode of the metal-oxide-semiconductor 12 is electrically connected with after being electrically connected with each other with the connection circuit 30.Likewise, the lower bridge arm circuit
The grid of each metal-oxide-semiconductor 12 on 20 is electrically connected with each other rear electrical with the corresponding PWM inputs 11 positive pole 111
Connection, i.e., be electrically connected with the positive pole 111 in itself bridge arm circuit.Each metal-oxide-semiconductor 12 in the lower bridge arm circuit 20
Source electrode be electrically connected with each other the rear negative pole 112 with the corresponding PWM inputs 11 and be electrically connected with, i.e., with itself bridge arm circuit
On negative pole 112 be electrically connected with.The drain electrode of each metal-oxide-semiconductor 12 in the lower bridge arm circuit 20 be electrically connected with each other after with
The negative pole 112 of the PWM inputs 11 in the upper bridge arm circuit 10 is electrically connected with.
The connection circuit 30 includes at least two noninductive electric capacity 31, and all noninductive electric capacity 31 is arranged side by side each other
Connection, one end of each noninductive electric capacity 31 and the drain electrode of each metal-oxide-semiconductor 12 in the upper bridge arm circuit 10 are electrical
Connection, the negative pole 112 of the other end and the PWM inputs 11 in the lower bridge arm circuit 20 is electrically connected with.Pass through setting
The noninductive electric capacity 31, can remove due to voltage spikes, it is ensured that the stabilization of the power driving circuit.Among the present embodiment, institute
Stating connection circuit 30 includes two noninductive electric capacity 31, and among other embodiments, can be according to actual circuit requirements
Arrange the noninductive electric capacity 31 of other quantity.
To sum up, the power driving circuit among the utility model above-described embodiment, due to being used as power device using metal-oxide-semiconductor
Part, and the cost of metal-oxide-semiconductor is low, and far below the IGBT and IPM being previously mentioned among prior art, so that the power drive
Circuit has the advantages that cost is low, while metal-oxide-semiconductor also has, switching speed is fast, easy in parallel, the required low advantage of driving power,
The design difficulty and power attenuation of the power driving circuit can be reduced, the power driving circuit is create a further reduction
Design cost.Moreover, it is described due to the grid of each metal-oxide-semiconductor 12, source electrode correspondence and the connection of corresponding positive and negative electrode
The drain electrode of each metal-oxide-semiconductor 12 in upper bridge arm circuit 10 passes through in the connection circuit 30 and the lower bridge arm circuit 20
Negative pole 112 is connected, the drain electrode of each metal-oxide-semiconductor 12 in the lower bridge arm circuit 20 and the negative pole of the upper bridge arm circuit 10
112 are connected so that the current sharing of each metal-oxide-semiconductor 12 is good, bear high current ability and become strong, and its expansion power, which is used, not to be deposited
In very big obstacle, it is ensured that the high reliability of power circuit.
It may be noted that must be, the power driving circuit be single-phase power drive circuit, can be as single-phase control apparatus (such as
Single-phase asynchronous motor) drive circuit, and when being multi-phase controlling electrical equipment by driving electrical equipment, can be using respective amount it is described
Power driving circuit, to drive this by driving electrical equipment, and all power driving circuits can be separately separated setting or
Setting is connected in parallel each other.For example, when by driving electrical equipment for threephase asynchronous machine, can be driven using three power
Dynamic circuit drives threephase asynchronous machine, i.e., respectively connect the correspondence of the signal output part 40 of three power driving circuits
It is connected on three inputs of threephase asynchronous machine, and three power driving circuits can be separately separated setting, while
Setting can be connected in parallel each other, to constitute a three phase inverter bridge drive circuit.
Referring to Fig. 3, showing the work(among the power driving circuit in the utility model second embodiment, the present embodiment
Rate drive circuit is more or less the same with power driving circuit among first embodiment, and the power driving circuit among the present embodiment exists
On the basis of first embodiment, including following difference：
The grid of each metal-oxide-semiconductor 12 passes through positive pole 111 of the current-limiting resistance 13 with the corresponding PWM inputs 11
It is electrically connected with, the span of the current-limiting resistance 13 is the Ω of 5 Ω~70, passes through the current-limiting resistance 13 of setting so that institute
State after the parallel connection of metal-oxide-semiconductor 12, improve the effect flowed, the resistance of the current-limiting resistance 13 can be according to the grid of the metal-oxide-semiconductor 12
The drive signal voltage of current range and the metal-oxide-semiconductor 12 is calculated and obtained.
The upper bridge arm circuit 10 and the lower bridge arm circuit 20 respectively further comprise at least one filter capacitor 14, Mei Gesuo
State the correspondence of filter capacitor 14 to be connected in parallel with a current-limiting resistance 13, and be connected to the corresponding PWM inputs 11
Between positive pole 111 and negative pole 112, to constitute a RC filter circuits, voltage signal is adjusted with realizing, overvoltage is prevented
Etc. phenomenon of the failure.It should be understood that the quantity of the filter capacitor 14 in each bridge arm circuit must not exceed itself bridge arm electricity
The quantity of the current-limiting resistance 13 on road.Among the present embodiment, the upper bridge arm circuit 10 and the lower bridge arm circuit 20
Include two filter capacitors 14 respectively.
The upper bridge arm circuit 10 and the lower bridge arm circuit 20 respectively further comprise a TVS (TRANSIENT VOLTAGE
SUPPRESSOR, also referred to as transient voltage suppressor) pipe 15, the TVS pipe 15 is connected to the corresponding PWM inputs 11
Positive pole 111 and negative pole 112 between.The TVS pipe 15 is two-way transient supression diode, can make the grid of the metal-oxide-semiconductor 12
Pole driving voltage is stable in below 18V, to prevent the metal-oxide-semiconductor 12 from being damaged because by the impact of transient state high-energy.
The upper bridge arm circuit 10 and the lower bridge arm circuit 20 respectively further comprise a shunt resistance 16, each shunting
Resistance 16 is connected between the positive pole 111 of the corresponding PWM inputs 11 and negative pole 112.It should be understood that by adjusting
The resistance of shunt resistance 16 is stated, the electric current for flowing to the metal-oxide-semiconductor 12 can be adjusted, current limliting can be played a part of.
Embodiment described above only expresses several embodiments of the present utility model, and it describes more specific and detailed,
But therefore it can not be interpreted as the limitation to the utility model the scope of the claims.It should be pointed out that for the common of this area
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. bridge arm circuit and lower bridge arm circuit on a kind of power driving circuit, including structure identical, it is characterised in that：On described
Bridge arm circuit and the lower bridge arm circuit serial connection, and the midpoint of connection is the signal output part of the power driving circuit,
The upper bridge arm circuit and the lower bridge arm circuit include a PWM inputs and the multiple metal-oxide-semiconductors being connected in parallel, the PWM
Input includes positive and negative electrode；
The grid of each metal-oxide-semiconductor is electrically connected with the positive pole of the corresponding PWM inputs, the source of each metal-oxide-semiconductor
Pole is electrically connected with the negative pole of the corresponding PWM inputs, and the drain electrode of each metal-oxide-semiconductor in the upper bridge arm circuit is led to
The negative pole for crossing a connection circuit and the PWM inputs in the lower bridge arm circuit is electrically connected with, in the lower bridge arm circuit
Each metal-oxide-semiconductor drain electrode with the upper bridge arm circuit on the PWM inputs negative pole be electrically connected with.
2. power driving circuit according to claim 1, it is characterised in that the grid of each metal-oxide-semiconductor passes through a limit
Leakage resistance is electrically connected with the positive pole of the corresponding PWM inputs.
3. power driving circuit according to claim 2, it is characterised in that the span of the current-limiting resistance is 5 Ω
~70 Ω.
4. power driving circuit according to claim 2, it is characterised in that the upper bridge arm circuit and the lower bridge arm electricity
Road respectively further comprises at least one filter capacitor, and each filter capacitor correspondence is connected in parallel with a current-limiting resistance,
And be connected between the positive and negative electrode of the corresponding PWM inputs, to constitute a RC filter circuits.
5. power driving circuit according to claim 1, it is characterised in that the upper bridge arm circuit and the lower bridge arm electricity
The quantity span of the metal-oxide-semiconductor on road is 7 to 12.
6. power driving circuit according to claim 1, it is characterised in that the upper bridge arm circuit and the lower bridge arm electricity
Road and bridge arm respectively further comprises a TVS pipe, and the TVS pipe is connected between the positive and negative electrode of the corresponding PWM inputs.
7. power driving circuit according to claim 1, it is characterised in that the upper bridge arm circuit and the lower bridge arm electricity
Road and bridge arm respectively further comprises a shunt resistance, and each shunt resistance is connected to the positive and negative electrode of the corresponding PWM inputs
Between.
8. power driving circuit according to claim 1, it is characterised in that it is noninductive that the connection circuit includes at least two
Electric capacity, all noninductive electric capacity are connected side by side each other, one end of each noninductive electric capacity and the upper bridge arm electricity
The drain electrode of each metal-oxide-semiconductor on road is electrically connected with, and the other end is negative with the PWM inputs in the lower bridge arm circuit
Pole is electrically connected with.
9. power driving circuit according to claim 1, it is characterised in that each described in the upper bridge arm circuit
The grid of metal-oxide-semiconductor is electrically connected with each other in the rear positive pole electric connection with the corresponding PWM inputs, the upper bridge arm circuit
The source electrode of each metal-oxide-semiconductor be electrically connected with each other the rear negative pole with the corresponding PWM inputs and be electrically connected with, it is described on
The drain electrode of each metal-oxide-semiconductor in bridge arm circuit is electrically connected with after being electrically connected with each other with the connection circuit.
10. power driving circuit according to claim 1, it is characterised in that each described in the lower bridge arm circuit
The grid of metal-oxide-semiconductor is electrically connected with each other in the rear positive pole electric connection with the corresponding PWM inputs, the lower bridge arm circuit
The source electrode of each metal-oxide-semiconductor be electrically connected with each other the rear negative pole with the corresponding PWM inputs and be electrically connected with, it is described under
The drain electrode of each metal-oxide-semiconductor in bridge arm circuit is electrically connected with each other the rear PWM with the upper bridge arm circuit and inputted
The negative pole at end is electrically connected with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720145773.8U CN206533299U (en) | 2017-02-17 | 2017-02-17 | Power driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720145773.8U CN206533299U (en) | 2017-02-17 | 2017-02-17 | Power driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206533299U true CN206533299U (en) | 2017-09-29 |
Family
ID=59919424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720145773.8U Expired - Fee Related CN206533299U (en) | 2017-02-17 | 2017-02-17 | Power driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206533299U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113141106A (en) * | 2021-05-20 | 2021-07-20 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
-
2017
- 2017-02-17 CN CN201720145773.8U patent/CN206533299U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113141106A (en) * | 2021-05-20 | 2021-07-20 | 安徽智纳智能装备有限公司 | Protection type MOS manages drive circuit that connects in parallel |
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