CN107181396B - A kind of paralleling MOS Guan Junliu and short-circuit protection circuit - Google Patents

A kind of paralleling MOS Guan Junliu and short-circuit protection circuit Download PDF

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CN107181396B
CN107181396B CN201710312808.7A CN201710312808A CN107181396B CN 107181396 B CN107181396 B CN 107181396B CN 201710312808 A CN201710312808 A CN 201710312808A CN 107181396 B CN107181396 B CN 107181396B
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resistance
capacitor
connect
oxide
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CN107181396A (en
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李鹏飞
陈靓
郑继贵
邓烨
黄玉平
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Beijing Research Institute of Precise Mechatronic Controls
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Beijing Research Institute of Precise Mechatronic Controls
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

A kind of paralleling MOS Guan Junliu and short-circuit protection circuit, are related to the technical field of electronic circuit with field of power electronics;Including switching value observation circuit, analog quantity observation circuit, quick observation circuit, metal-oxide-semiconductor parallel current-equalizing circuit, driving circuit, governor circuit, governor circuit and governor circuit;Wherein, one end of switching value observation circuit is connect with governor circuit;The other end of switching value observation circuit is connect with one end of governor circuit and analog quantity observation circuit respectively;The other end of analog quantity observation circuit is connect with quick observation circuit;Quick observation circuit is connect with one end of governor circuit and metal-oxide-semiconductor parallel current-equalizing circuit respectively;Metal-oxide-semiconductor parallel current-equalizing circuit is connect with driving circuit and external bus voltage respectively;The present invention realizes the electric current that each metal-oxide-semiconductor flows through and switching speed is equal, can effectively detect MOS current operating conditions rapidly;Circuit is built simple and reliable, and the area for occupying pcb board is smaller.

Description

A kind of paralleling MOS Guan Junliu and short-circuit protection circuit
Technical field
The present invention relates to a kind of technical fields of electronic circuit with field of power electronics, especially a kind of paralleling MOS Guan Jun Stream and short-circuit protection circuit.
Background technique
Metal-oxide-semiconductor is metal oxide semiconductor field effect tube (Metal Oxide Semiconductor Field Effect Transistor).With the development of electron electric power technology, power MOSFET good, switching loss with its high frequency performance It is small, input impedance is high, driving power is small, driving circuit is simple etc., be more and more widely used.In low-pressure high-power Many applications, such as electro-tricycle, Small electric forklift, in order to meet the requirement of electric current, without exception be use The method of metal-oxide-semiconductor parallel connection.But when metal-oxide-semiconductor is used in parallel, equal flow problem never obtains effective solution, thus may be because Metal-oxide-semiconductor is damaged for current unevenness;Meanwhile in metal-oxide-semiconductor in use, be seldom added to the short-circuit protection function of metal-oxide-semiconductor, even if plus Entered the protection circuit of metal-oxide-semiconductor, as erroneous judgement to guard mode or reaction metal-oxide-semiconductor is not had not in time it is very big Effect, so as to cause multiple parallel connections metal-oxide-semiconductor is straight-through, damage, substantially increase the cost of research and development in this way.
Technology is when metal-oxide-semiconductor is used in parallel at present, and equal flow problem never obtains effective solution, thus may be because Metal-oxide-semiconductor is damaged for current unevenness;Meanwhile in metal-oxide-semiconductor in use, be seldom added to the short-circuit protection function of metal-oxide-semiconductor, even if plus Entered the protection circuit of metal-oxide-semiconductor, as erroneous judgement to guard mode or reaction metal-oxide-semiconductor is not had not in time it is very big Effect, so as to cause multiple parallel connections metal-oxide-semiconductor is straight-through, damage, substantially increase the cost of research and development in this way.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, a kind of parallel connection Mos Guan Junliu and short-circuit guarantor are provided Protection circuit, realizes electric current that each metal-oxide-semiconductor flows through and switching speed is equal, can effectively detect that MOS is currently transported rapidly Row state;Circuit is built simple and reliable, and the area for occupying pcb board is smaller.
Above-mentioned purpose of the invention is achieved by following technical solution:
A kind of paralleling MOS Guan Junliu and short-circuit protection circuit, including it is switching value observation circuit, analog quantity observation circuit, fast Slowdown monitoring circuit, metal-oxide-semiconductor parallel current-equalizing circuit, driving circuit and governor circuit;Wherein, one end of switching value observation circuit and master Control circuit connection;The other end of switching value observation circuit is connect with one end of governor circuit and analog quantity observation circuit respectively;Mould The other end of analog quantity observation circuit is connect with quick observation circuit;Quick observation circuit is in parallel with governor circuit and metal-oxide-semiconductor respectively One end of flow equalizing circuit connects;Metal-oxide-semiconductor parallel current-equalizing circuit is connect with driving circuit and external bus voltage respectively.
In a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the switching value observation circuit includes comparator U1A, resistance R1, R15, R16 and capacitor C1;Wherein, the negative input end of comparator U1A is monitored with governor circuit and analog quantity respectively Circuit connection;The positive input terminal of comparator U1A is connect with one end of resistance R15 and resistance R16 respectively;The other end of resistance R16 It is connect respectively with No. 4 pins and GND of comparator U1A;The other end of resistance R15 respectively with No. 8 pins of comparator U1A and The connection of 15V power supply;The output end of comparator U1A is connect with governor circuit, resistance R1 and capacitor C1 respectively;The other end of resistance R1 It is connect with 3.3V power supply;The other end of capacitor C1 is grounded.
It include that operation is put in a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the analog quantity observation circuit Big device U2A, resistance R6, resistance R7 and capacitor C4;Wherein, the negative input end of operational amplifier U2A respectively with operational amplifier U2A Output end, governor circuit connects with switching value observation circuit;The positive input terminal of operational amplifier U2A respectively with capacitor C4, electricity Resistance R6 is connected with one end of resistance R7;The other end of resistance R7 is connect with quick observation circuit;After capacitor C4 is in parallel with resistance R6 It connect, and is grounded with No. 4 pins of operational amplifier U2A;No. 8 pins of operational amplifier U2A are connect with 15V power supply.
In a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the quick observation circuit includes photoelectric coupling It is device U3, capacitor C7, capacitor C8, capacitor C9, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, steady Press diode Z1, zener diode Z2, diode D1, diode D2 and triode Q4;Wherein, the OUT of photoelectric coupled device U3 End is connect with one end of governor circuit and capacitor C9 respectively;The end GND of photoelectric coupled device U3 is connect with the other end of capacitor C9, And it is grounded;The end VCC of photoelectric coupled device U3 is connect with 5V power supply;The end A of photoelectric coupled device U3 respectively with resistance R12, electricity Resistance R13 is connected with capacitor C8;The other end of resistance R12 is connect with power supply VCC;The other end of resistance R13 respectively with photoelectric coupling The C-terminal of device U3, the other end of capacitor C8 are connected with the collector of triode Q4;The emitter grounding of triode Q4;Triode Q4 Base stage connect respectively with one end of resistance R14, the cathode of zener diode Z2, resistance R11;The other end of resistance R11 and steady Press the anode connection of diode Z1;The cathode of zener diode Z1 respectively with analog quantity observation circuit, resistance R9, diode D2 One end connection of anode, capacitor C7, resistance R10;The other end of resistance R9 is connect with metal-oxide-semiconductor parallel current-equalizing circuit;Diode D2 Cathode connect with the anode of diode D1;The cathode of diode D1 is connect with metal-oxide-semiconductor parallel current-equalizing circuit;Capacitor C7, resistance After R10 is in parallel respectively with metal-oxide-semiconductor parallel current-equalizing circuit, the anode of zener diode Z2, the other end of resistance R14 and triode Q4 Emitter-base bandgap grading connection.
In a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the metal-oxide-semiconductor parallel current-equalizing circuit includes resistance R2, resistance R3, resistance R4, resistance R5, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3, capacitor C2, capacitor C3, capacitor C5 and capacitor C6; Wherein, one end of resistance R2 is connect with driving circuit and quick observation circuit respectively;The other end of resistance R2 is female with outside respectively Line voltage is connected with quick observation circuit;One end of resistance R3 is connect with driving circuit and quick observation circuit respectively;Resistance R3 The other end connect respectively with the gate pole of capacitor C2 and metal-oxide-semiconductor Q1;Metal-oxide-semiconductor Q1 drain electrode respectively with the drain electrode of metal-oxide-semiconductor Q2, MOS The drain electrode of pipe Q3, resistance R8 are connected with external bus voltage;The source electrode of metal-oxide-semiconductor Q1 respectively with the source electrode of metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3 Source electrode, capacitor C2, resistance R2, capacitor C5, capacitor C6 connect with quick observation circuit;The other end of resistance R4 respectively with capacitor C3 is connected with the gate pole of metal-oxide-semiconductor Q2;The other end of resistance R5 is connect with the gate pole of capacitor C5 and metal-oxide-semiconductor Q3 respectively;Resistance R8 with Capacitor C6 series connection.
Analog quantity is supervised in a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the switching value observation circuit Voltage value U after the voltage value U1 and resistance R15 of slowdown monitoring circuit output, R16 partial pressure is compared, when U1 is greater than U, metal-oxide-semiconductor Short circuit, the output end of comparator U1A export low level to governor circuit;When U1 is less than or equal to U, the output end of comparator U1A High level is exported to governor circuit.
Resistance R1 is in a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the switching value observation circuit Pull-up resistor;Capacitor C1 is filter capacitor;Resistance R15 and resistance R16 are provided with voltage protection threshold value.
It is Absorption Capacitance in a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the capacitor C4.
In a kind of above-mentioned paralleling MOS Guan Junliu and short-circuit protection circuit, the diode D1 and diode D2 are ultrafast Quick-recovery diode;Photoelectrical coupler U3 is high-speed photoelectric coupler.
The invention has the following advantages over the prior art:
(1) present invention employs a kind of paralleling MOS Guan Junliu and short-circuit protection circuits, realize the electricity that each metal-oxide-semiconductor flows through Stream is equal with switching speed, and in metal-oxide-semiconductor short circuit, with the mode of triple protection, can quickly and effectively detect that MOS is current Operating status, to improve metal-oxide-semiconductor safety;
(2) present invention employs metal-oxide-semiconductor parallel current-equalizing circuit, realize that each metal-oxide-semiconductor driving current and switching speed are equal, It is identical to realize the electric current flowed through between DS simultaneously.Improve MOS it is used in parallel when equal properties of flow and protection feature;
(3) present invention employs quick observation circuit, quick protection when realizing to metal-oxide-semiconductor short circuit improves protection Speed, protect metal-oxide-semiconductor in a short time;
(4) present invention employs quick observation circuit, the accurate setting to protection voltage threshold is realized, protection is improved Accuracy, while it is convenient according to their own needs, setting protection threshold value;
(5) it present invention employs analog quantity observation circuit, realizes to the real-time monitoring for needing to protect voltage, improves guarantor The accuracy of shield effectively prevents from accidentally protecting;
(6) present invention employs switching value observation circuit, the status monitoring to MOS protection is realized, can be set simultaneously Different voltages fiducial value improves the grade of protection;
(7) it present invention employs supper-fast recovery diode D1, D2 and high-speed photoelectric coupler U3, realizes to event The ns order reaction speed of barrier, improves protection speed;
(8) present invention employs noninductive capacitor C6, the absorption to peak voltage is realized, improves the reliability of circuit.
Detailed description of the invention
Fig. 1 is paralleling MOS Guan Junliu of the present invention and short-circuit protection circuit schematic diagram.
Specific embodiment
The present invention is described in further detail in the following with reference to the drawings and specific embodiments:
The present invention provides a kind of paralleling MOS Guan Junliu and short-circuit protection circuit, can metal-oxide-semiconductor it is in parallel use circuit In, accomplish that electric current that each metal-oxide-semiconductor flows through and switching speed are equal, and in metal-oxide-semiconductor short circuit, with the mode of triple protection, energy It is enough effectively to detect MOS current operating conditions rapidly, to protect metal-oxide-semiconductor, make metal-oxide-semiconductor is as few to be as possible damaged.This electricity Road is built simple and reliable, and the area for occupying pcb board is smaller, is particluarly suitable for higher to PCB size requirements while being required protection Very high occasion uses.
It is as shown in Figure 1 paralleling MOS Guan Junliu and short-circuit protection circuit schematic diagram, as seen from the figure, a kind of parallel connection Mos pipe is equal Stream and short-circuit protection circuit, including switching value observation circuit, analog quantity observation circuit, quick observation circuit, metal-oxide-semiconductor parallel current-sharing Circuit, driving circuit and governor circuit;Wherein, one end of switching value observation circuit is connect with governor circuit;Switching value monitoring electricity The other end on road is connect with one end of governor circuit and analog quantity observation circuit respectively;The other end of analog quantity observation circuit and fast Slowdown monitoring circuit connection;Quick observation circuit is connect with one end of governor circuit and metal-oxide-semiconductor parallel current-equalizing circuit respectively;Metal-oxide-semiconductor Parallel current-equalizing circuit is connect with driving circuit and external bus voltage respectively.
Wherein, switching value observation circuit includes comparator U1A, resistance R1, R15, R16 and capacitor C1;Wherein, comparator The negative input end of U1A is connect with governor circuit and analog quantity observation circuit respectively;The positive input terminal of comparator U1A respectively with resistance R15 is connected with one end of resistance R16;The other end of resistance R16 is connect with No. 4 pins and GND of comparator U1A respectively;Resistance The other end of R15 is connect with No. 8 pins and 15V power supply of comparator U1A respectively;The output end of comparator U1A respectively with master control Circuit, resistance R1 are connected with capacitor C1;The other end of resistance R1 is connect with 3.3V power supply;The other end of capacitor C1 is grounded.
Wherein, switching value observation circuit is mainly used for the value U1 and resistance R15 that analog quantity observation circuit is exported, and R16 divides Voltage value U after pressure makes comparisons, output protection signal condition.When U1 is greater than U, illustrate metal-oxide-semiconductor short circuit, 1 pin of comparator Low level is exported, gives governor circuit, when circuit monitoring is to low level and other several semaphore comparative analyses, simultaneously to metal-oxide-semiconductor Connection flow equalizing circuit is protected.When U1 is less than or equal to U, 1 pin of comparator exports high level, illustrates that circuit works normally, this It is achieved that first protects again.It is pull-up resistor that wherein resistance, which is R1, since comparator is open-collector circuitry, so must add Pull-up resistor, when guaranteeing that circuit is normal, the output of high level.Capacitor C1 is filter capacitor, in order to absorb burr, in case failure is missed Report, resistance R15, R16 main function are that different voltage protection threshold values is arranged according to the different resistance value of selection.
Analog quantity observation circuit includes operational amplifier U2A, resistance R6, resistance R7 and capacitor C4;Wherein, operational amplifier The negative input end of U2A is connect with the output end of operational amplifier U2A, governor circuit and switching value observation circuit respectively;Operation is put The positive input terminal of big device U2A is connect with one end of capacitor C4, resistance R6 and resistance R7 respectively;The other end of resistance R7 and quickly prison Slowdown monitoring circuit connection;It connect, and is grounded with No. 4 pins of operational amplifier U2A after capacitor C4 is in parallel with resistance R6;Operational amplifier No. 8 pins of U2A are connect with 15V power supply.
Wherein, analog quantity observation circuit is mainly used for the voltage in the quick observation circuit of real-time monitoring at D2 anode.Resistance R6, R7 need the voltage value according to protection, select reasonable resistance value mainly for adjusting the voltage value acquired.When circuit work When making, guarantees that operational amplifier pin 1 exports the value of a reasonable voltage, on the one hand give comparator U1A, on the one hand give master Circuit is controlled, governor circuit is judged whether to protect, be protected again which achieves second according to comparative analysis.It is simultaneously but real When monitor needed for protect voltage value, play accurately protective effect.Wherein capacitor C4 is Absorption Capacitance, in order to eliminate Interference signal present in sampled point signal.
Moreover, operational amplifier U2A will select a kind of low noise in analog quantity observation circuit, there is low-down input to lose Voltage is adjusted, high-gain, the amplifier of high-precision occasion are suitable for.Resistance R6, R7 will select high-precision resistance.
Quick observation circuit includes photoelectric coupled device U3, capacitor C7, capacitor C8, capacitor C9, resistance R9, resistance R10, electricity Hinder R11, resistance R12, resistance R13, resistance R14, zener diode Z1, zener diode Z2, diode D1, diode D2 and three Pole pipe Q4;Wherein, the OUT terminal of photoelectric coupled device U3 is connect with one end of governor circuit and capacitor C9 respectively;Photoelectrical coupler The end GND of part U3 is connect with the other end of capacitor C9, and is grounded;The end VCC of photoelectric coupled device U3 is connect with 5V power supply;Photoelectricity The end A of coupled apparatus U3 is connect with resistance R12, resistance R13 and capacitor C8 respectively;The other end and power supply VCC of resistance R12 connects It connects;The other end of the resistance R13 collector with the C-terminal of photoelectric coupled device U3, the other end of capacitor C8 and triode Q4 respectively Connection;The emitter grounding of triode Q4;The base stage of triode Q4 respectively with resistance R14, the cathode of zener diode Z2, resistance One end of R11 connects;The other end of resistance R11 is connect with the anode of zener diode Z1;The cathode of zener diode Z1 is distinguished It is connect with one end of analog quantity observation circuit, resistance R9, the anode of diode D2, capacitor C7, resistance R10;Resistance R9's is another End is connect with metal-oxide-semiconductor parallel current-equalizing circuit;The cathode of diode D2 is connect with the anode of diode D1;The cathode of diode D1 with The connection of metal-oxide-semiconductor parallel current-equalizing circuit;After capacitor C7, resistance R10 are in parallel respectively with metal-oxide-semiconductor parallel current-equalizing circuit, zener diode The anode of Z2, the other end of resistance R14 are connected with the emitter-base bandgap grading of triode Q4.
Wherein, quick observation circuit is mainly used for carrying out fast slowdown monitoring and protection to short circuit.When circuit works normally, two Pole pipe D1, D2 conducting, for signal from driving circuit by resistance R9, diode D1, D2 flow to metal-oxide-semiconductor parallel current-equalizing circuit, two poles Voltage at pipe D2 anode is clamped down on between 1-1.4V, and triode Q4 and photoelectrical coupler U3 are failure to actuate at this time, is electrically coupled Device U3 pin 5 exports high level to governor circuit;When circuit malfunctions, voltage is gradually increased at the cathode of D1, until D1, D2 cut-off, signal, by resistance R9, zener diode Z1, are connected triode Q4, at this time photoelectrical coupler U3 from driving circuit It is also switched on, and the pin 5 of U3 exports low level to governor circuit.Corresponding reaction is made in master control, protects to circuit.This is just Constitute triple protection.The number of wherein diode D2, D3 can be adjusted according to protection voltage value, zener diode Z1 Pressure stabilizing value can also according to protection voltage value be adjusted.Capacitor C7 misleads when being mainly used for preventing circuit from working normally, Resistance R10 is mainly used for discharging to capacitor C7.Zener diode Z2 mainly serves for ensuring the value of driving signal voltage, resistance R12 Conducting electric current mainly is provided to photoelectrical coupler U3, capacitor C8 misleads when being mainly used for preventing circuit from working normally, resistance R13 is mainly used for discharging to capacitor C8.Capacitor C9 is mainly to be filtered to the 5 pins output of U3.Resistance R14 is mainly used for preventing Only external interference avoids Q4 from misleading.
In the quick observation circuit, diode D1, D2 are supper-fast recovery diode;Zener diode Z1, Z2 are wanted Select the pipe of reasonable voltage stabilized range;Photoelectrical coupler U3 is high-speed photoelectric coupler.
Metal-oxide-semiconductor parallel current-equalizing circuit includes resistance R2, resistance R3, resistance R4, resistance R5, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, MOS Pipe Q3, capacitor C2, capacitor C3, capacitor C5 and capacitor C6;Wherein, one end of resistance R2 is electric with driving circuit and fast slowdown monitoring respectively Road connection;The other end of resistance R2 is connect with external bus voltage and quick observation circuit respectively;One end of resistance R3 respectively with Driving circuit is connected with quick observation circuit;The other end of resistance R3 is connect with the gate pole of capacitor C2 and metal-oxide-semiconductor Q1 respectively;MOS The drain electrode of pipe Q1 is connect with the drain electrode of metal-oxide-semiconductor Q2, the drain electrode of metal-oxide-semiconductor Q3, resistance R8 and external bus voltage respectively;Metal-oxide-semiconductor Q1 Source electrode respectively with the source electrode of metal-oxide-semiconductor Q2, the source electrode of metal-oxide-semiconductor Q3, capacitor C2, resistance R2, capacitor C5, capacitor C6 and fast slowdown monitoring Circuit connection;The other end of resistance R4 is connect with the gate pole of capacitor C3 and metal-oxide-semiconductor Q2 respectively;The other end of resistance R 5 respectively with Capacitor C5 is connected with the gate pole of metal-oxide-semiconductor Q3;Resistance R8 connects with capacitor C6.
Metal-oxide-semiconductor parallel current-equalizing circuit is mainly used for MOS in Shi Junliu used in parallel and protection.When the circuit is operating, it drives Dynamic circuit issues driving signal, controls metal-oxide-semiconductor Q1 by resistance R3, R4, R5, Q2's, Q3 turns on and off.Resistance R3, R4, R5 Effect is to provide for driving current, while can reduce away influence of the line impedence to circuit, makes per in driving signal all the way Impedance plays the role of while turning on and off MOS, be conducive to flow close to identical;Capacitor C2, C3, C5, which are acted on, is The parasitic capacitance for matching MOS makes respective parasitic capacitance plus capacitor C2, and capacitance is conducive to make close to identical after C3, C5 Turning on and off for metal-oxide-semiconductor is a little identical, keeps stream effect more preferable;Resistance R2 is mainly used for preventing external interference, avoids metal-oxide-semiconductor Q1, Q2, Q3 mislead, and play protective effect to metal-oxide-semiconductor;Resistance R8 and C6 be mainly used for absorb metal-oxide-semiconductor drain electrode and source electrode it Between peak voltage, avoid damaging MOS since spike is excessive.
In the metal-oxide-semiconductor parallel current-equalizing circuit, metal-oxide-semiconductor will select low Rdson, and the pipe that parasitic capacitance is very nearly the same Son;Resistance R8 will select resistance value appropriate, be conducive to peak absorbing;Capacitor C6 will select parasitic inductance small or noninductive electricity Hold;Resistance R3, R4, R5 can adjust resistance value according to required driving capability size;C2, C3, C5 will select capacitance and MOS parasitic Capacitance values and the equal capacitor of the order of magnitude.When PCB is laid out, metal-oxide-semiconductor and capacitor C2, C3, C5, C6 will be as close as possible to.
When circuit works normally, driving circuit output drive signal passes through resistance R3, and R4, R5 first give capacitor C2, C3, C5 Charging when being charged to certain voltage value, starts to control metal-oxide-semiconductor Q1, the switch of Q2, Q3, the at this time voltage value at diode D2 anode Very little, voltage value at analog quantity monitoring circuit monitors D2 anode are simultaneously sent to governor circuit, and switching value observation circuit is passing through Compare the voltage value of analog quantity observation circuit output, and generate a corresponding state, is sent to governor circuit, while fast slowdown monitoring The signal that circuit exports 5 pins of photoelectrical coupler U3 plays the role of triple protection to governor circuit;
When short trouble occurs in circuit, voltage is gradually increased at the cathode of D1, and until D1, D2 end, signal is from driving Circuit is connected triode Q4, photoelectrical coupler U3 is also switched at this time, and the OUT terminal of U3 by resistance R9, zener diode Z1 Low level is exported to governor circuit;False voltage value at analog quantity monitoring circuit monitors D2 anode is simultaneously sent to governor circuit, Switching value observation circuit generates a corresponding state in the voltage value by comparing the output of analog quantity observation circuit, is sent to Governor circuit;Play the role of protection.
The content that description in the present invention is not described in detail belongs to the well-known technique of those skilled in the art.

Claims (6)

1. a kind of paralleling MOS Guan Junliu and short-circuit protection circuit, it is characterised in that: supervised including switching value observation circuit, analog quantity Slowdown monitoring circuit, quick observation circuit, metal-oxide-semiconductor parallel current-equalizing circuit, driving circuit and governor circuit;Wherein, switching value observation circuit One end connect with governor circuit;The other end of switching value observation circuit respectively with governor circuit and analog quantity observation circuit one End connection;The other end of analog quantity observation circuit is connect with quick observation circuit;Quick observation circuit respectively with governor circuit and One end of metal-oxide-semiconductor parallel current-equalizing circuit connects;Metal-oxide-semiconductor parallel current-equalizing circuit connects with driving circuit and external bus voltage respectively It connects;
The switching value observation circuit includes comparator U1A, resistance R1, R15, R16 and capacitor C1;Wherein, comparator U1A's is negative Input terminal is connect with governor circuit and analog quantity observation circuit respectively;The positive input terminal of comparator U1A respectively with resistance R15 and electricity Hinder one end connection of R16;The other end of resistance R16 is connect with No. 4 pins and GND of comparator U1A respectively;Resistance R15's is another One end is connect with No. 8 pins and 15V power supply of comparator U1A respectively;The output end of comparator U1A respectively with governor circuit, electricity One end of resistance R1 is connected with one end of capacitor C1;The other end of resistance R1 is connect with 3.3V power supply;The other end of capacitor C1 is grounded;
The analog quantity observation circuit includes operational amplifier U2A, resistance R6, resistance R7 and capacitor C4;Wherein, operational amplifier The negative input end of U2A is connect with the output end of operational amplifier U2A, governor circuit and switching value observation circuit respectively;Operation is put The positive input terminal of big device U2A is connect with one end of capacitor C4, resistance R6 and resistance R7 respectively;The other end of resistance R7 and quickly prison Slowdown monitoring circuit connection;It is connect after the other end of capacitor C4 is in parallel with the other end of resistance R6 with No. 4 pins of operational amplifier U2A, And it is grounded;No. 8 pins of operational amplifier U2A are connect with 15V power supply;
The quick observation circuit includes photoelectric coupled device U3, capacitor C7, capacitor C8, capacitor C9, resistance R9, resistance R10, electricity Hinder R11, resistance R12, resistance R13, resistance R14, zener diode Z1, zener diode Z2, diode D1, diode D2 and three Pole pipe Q4;Wherein, the OUT terminal of photoelectric coupled device U3 is connect with one end of governor circuit and capacitor C9 respectively;Photoelectrical coupler The end GND of part U3 is connect with the other end of capacitor C9, and is grounded;The end VCC of photoelectric coupled device U3 is connect with 5V power supply;Photoelectricity The end A of coupled apparatus U3 is connect with one end of one end of resistance R12, one end of resistance R13 and capacitor C8 respectively;Resistance R12's The other end is connect with power supply VCC;The other end of resistance R13 respectively with the C-terminal of photoelectric coupled device U3, capacitor C8 the other end and The collector of triode Q4 connects;The emitter grounding of triode Q4;The base stage of triode Q4 respectively with one end of resistance R14, steady Press one end connection of the cathode, resistance R11 of diode Z2;The other end of resistance R11 is connect with the anode of zener diode Z1;Surely Press diode Z1 cathode respectively with analog quantity observation circuit, one end of resistance R9, the anode of diode D2, capacitor C7, resistance One end of R10 connects;The other end of resistance R9 is connect with metal-oxide-semiconductor parallel current-equalizing circuit;The cathode and diode D1 of diode D2 Anode connection;The cathode of diode D1 is connect with metal-oxide-semiconductor parallel current-equalizing circuit;The other end of capacitor C7, resistance R10 it is another After end is in parallel respectively with metal-oxide-semiconductor parallel current-equalizing circuit, the anode of zener diode Z2, the other end of resistance R14 and triode Q4 Emitter-base bandgap grading connection.
2. a kind of paralleling MOS Guan Junliu according to claim 1 and short-circuit protection circuit, it is characterised in that: the metal-oxide-semiconductor Parallel current-equalizing circuit includes resistance R2, resistance R3, resistance R4, resistance R5, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, metal-oxide-semiconductor Q3, capacitor C2, electricity Hold C3, capacitor C5 and capacitor C6;Wherein, one end of resistance R2 is connect with driving circuit and quick observation circuit respectively;Resistance R2 The other end connect respectively with external bus voltage and quick observation circuit;One end of resistance R3 respectively with driving circuit and quickly Observation circuit connection;The other end of resistance R3 is connect with the gate pole of the other end of capacitor C2 and metal-oxide-semiconductor Q1 respectively;Metal-oxide-semiconductor Q1's Drain electrode is connect with the drain electrode of metal-oxide-semiconductor Q2, the drain electrode of metal-oxide-semiconductor Q3, one end of resistance R8 and external bus voltage respectively;Metal-oxide-semiconductor Q1 Source electrode respectively with the source electrode of metal-oxide-semiconductor Q2, the source electrode of metal-oxide-semiconductor Q3, the other end of capacitor C2, the other end of resistance R2, capacitor C5 The other end, the other end of capacitor C6, the other end of capacitor C3 connect with quick observation circuit;The other end of resistance R4 respectively with One end of capacitor C3 is connected with the gate pole of metal-oxide-semiconductor Q2;The other end of the resistance R5 door with one end of capacitor C5 and metal-oxide-semiconductor Q3 respectively Pole connection;The other end of resistance R8 and one end of capacitor C6 are connected in series;One end of resistance R4 respectively with driving circuit and quickly Observation circuit connection, one end of resistance R5 is also connect with driving circuit and quick observation circuit respectively.
3. a kind of paralleling MOS Guan Junliu according to claim 2 and short-circuit protection circuit, it is characterised in that: the switch Voltage value U after the voltage value U1 and resistance R15 that amount observation circuit exports analog quantity observation circuit, R16 partial pressure is compared Compared with when U1 is greater than U, metal-oxide-semiconductor short circuit, the output end of comparator U1A exports low level to governor circuit;When U1 is less than or equal to U When, the output end of comparator U1A exports high level to governor circuit.
4. a kind of paralleling MOS Guan Junliu according to claim 3 and short-circuit protection circuit, it is characterised in that: the switch Measuring resistance R1 in observation circuit is pull-up resistor;Capacitor C1 is filter capacitor;Resistance R15 and resistance R16 are provided with voltage protection Threshold value.
5. a kind of paralleling MOS Guan Junliu according to claim 4 and short-circuit protection circuit, it is characterised in that: the capacitor C4 is Absorption Capacitance.
6. a kind of paralleling MOS Guan Junliu according to claim 5 and short-circuit protection circuit, it is characterised in that: two pole Pipe D1 and diode D2 is supper-fast recovery diode;Photoelectrical coupler U3 is high-speed photoelectric coupler.
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108616266A (en) * 2018-05-08 2018-10-02 深圳市飞碟动力科技有限公司 A kind of metal-oxide-semiconductor parallel current-equalizing circuit
CN108880272B (en) * 2018-08-24 2024-06-21 广州致远电子股份有限公司 Push-pull converter circuit and control method thereof
CN108880271A (en) * 2018-08-24 2018-11-23 广州致远电子有限公司 A kind of push-pull converter circuit and its control method
CN109067164A (en) * 2018-08-24 2018-12-21 广州致远电子有限公司 A kind of push-pull converter circuit and its control method
CN109787452A (en) * 2019-03-28 2019-05-21 珠海凯邦电机制造有限公司 IGBT parallel current sharing circuit, current sharing method and motor
CN110621109B (en) * 2019-04-02 2021-07-20 杭州方千科技有限公司 Signal self-adaptive light supplementing device
CN110311668B (en) * 2019-07-05 2022-11-04 上海趣致网络科技有限公司 Chip output pin forward overvoltage and reverse voltage protection circuit and method
CN113331493A (en) * 2021-05-08 2021-09-03 铂德(深圳)科技有限公司 Short-circuit protection circuit and electron cigarette

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216703A (en) * 2013-04-23 2014-11-17 株式会社デンソー Load drive circuit
CN204216868U (en) * 2014-11-12 2015-03-18 天津电气科学研究院有限公司 IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit
CN205545179U (en) * 2016-03-25 2016-08-31 上海联影医疗科技有限公司 IGBT overflows detection circuitry and current foldback circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2888434Y (en) * 2005-12-09 2007-04-11 合肥工大高科信息技术有限责任公司 Motor vehicle state monitoring device
JP5268294B2 (en) * 2007-06-27 2013-08-21 北芝電機株式会社 Fault detection device for chopper circuit
US7880531B2 (en) * 2008-01-23 2011-02-01 Micron Technology, Inc. System, apparatus, and method for selectable voltage regulation
CN101686044B (en) * 2009-03-25 2011-10-26 深圳市科陆变频器有限公司 IGBT drive protection circuit
CN102905443B (en) * 2012-10-31 2014-12-10 上海小糸车灯有限公司 Linear constant-current and current-sharing LED drive circuit and circuit board structure thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014216703A (en) * 2013-04-23 2014-11-17 株式会社デンソー Load drive circuit
CN204216868U (en) * 2014-11-12 2015-03-18 天津电气科学研究院有限公司 IGBT parallel drive in high-power frequency conversion speed regulating device and detection protective circuit
CN205545179U (en) * 2016-03-25 2016-08-31 上海联影医疗科技有限公司 IGBT overflows detection circuitry and current foldback circuit

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