CN107342742A - A kind of fast conducting MOSFET amplifying circuits and power amplifier - Google Patents
A kind of fast conducting MOSFET amplifying circuits and power amplifier Download PDFInfo
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- CN107342742A CN107342742A CN201710787527.7A CN201710787527A CN107342742A CN 107342742 A CN107342742 A CN 107342742A CN 201710787527 A CN201710787527 A CN 201710787527A CN 107342742 A CN107342742 A CN 107342742A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
Abstract
The application discloses a kind of fast conducting MOSFET amplifying circuits and power amplifier in fact, specifically, the minimum electric capacity of a stray reactance in parallel between the grid and source electrode of MOSFET pipes, and drive signal can be followed to drive metal-oxide-semiconductor to turn on together.When source driving signal output drive signal, make the triode ON being connected with drive signal first, and then the electric capacity being connected with triode can be to the gate charges of MOSFET pipes, this charging is pulsed, because changing with the grid potential of MOSFET pipes, the voltage difference between the emitter-base bandgap grading and colelctor electrode of triode reduces, and then by, charging of the electric capacity to MOSFET pipes terminates, and the now drain electrode of MOSFET pipes has been in the state of constant conduction with source electrode；The pulse current formed by above-mentioned electric capacity, MOSFET pipes can quickly form conducting channel, and then adapt to the Slew Rate of drive signal, can preferably follow the state of drive signal, improve the performance of product.
Description
Technical field
The application is related to electronic circuit technology field, more particularly to a kind of fast conducting MOSFET amplifying circuits and power are put
Big device.
Background technology
Power amplification circuit is widely used in the amplification of the analog signals such as audio and process field, current widely used three pole
Pipe carries out power amplification circuit design, but with to the increasing demand of amplifying circuit power output, transistor amplifier
Because the characteristic of itself has been increasingly difficult to meet the needs of high-power output：First, triode belongs to Current amplifier type element,
Power output is bigger, and required base current is bigger, and control circuit power consumption is bigger；Secondly, large power triode is due to manufacture
Technique limits, and multiplication factor is all than relatively low, and this just needs further exist for increasing base current, so that control circuit power consumption enters one
Step increase, it has to using multiple drive power, this adds increased system complexity, add the volume and weight of equipment.
The problem of in order to overcome high-power power amplification circuit control circuit power consumption to cause greatly, in recent years people's use
MOSFET replaces triode to carry out power amplification circuit design, and MOSFET belongs to voltage-controlled component, changes the voltage of grid
Signal is that the control to power output can be achieved, and power very little needed for control even can be ignored, so as to very significantly
Reduce control circuit power consumption, simplify design on control circuit.It is bright but MOSFET gate turn-on voltage is generally 2V-5V
The aobvious cut-in voltage higher than triode 0.6V or so, it is slow to the response speed of drive signal there is larger controlling dead error, this
Limit the development and application of MOSFET power amplification circuits.
The content of the invention
This application provides a kind of fast conducting MOSFET amplifying circuits and power amplifier, to realize that metal-oxide-semiconductor follows drive
Dynamic signal fast conducting, improve the quick response function of amplifying circuit.
First aspect according to embodiments of the present invention, there is provided a kind of fast conducting MOSFET amplifying circuits, the circuit
Including the first MOSFET pipes, first voltage source, the first source driving signal, the first dc source, the first electric capacity and the first triode,
Wherein：
The output end of first source driving signal connects the base stage of first triode, first triode is penetrated
Pole connects the grid of the first MOSFET pipes；
One end of first electric capacity connects the colelctor electrode of first triode and first dc source respectively
Output end, other end ground connection；
The drain electrode of the first MOSFET pipes connects the output end of the first voltage source, source ground.
Preferably, the circuit also includes being made up of the second triode and the 3rd triode totem driver element, the
Two dc sources and first resistor, wherein：
One end of the first resistor connects the output end of first source driving signal, the other end connects described the respectively
The base stage of two triodes and the 3rd triode；
The colelctor electrode of second triode connects the output end of second dc source, emitter-base bandgap grading connection connects institute respectively
State the grid, the emitter-base bandgap grading of the 3rd triode and the emitter-base bandgap grading of first triode of the first MOSFET pipes；
The grounded collector of 3rd triode.
Preferably, first electric capacity includes multiple sub- electric capacity in parallel.
Preferably, the circuit also includes the 2nd MOSFET pipes, the second voltage source, the second source driving signal, the 3rd direct current
Power supply, the second electric capacity and the 4th triode, wherein：
The output end of second source driving signal connects the base stage of the 4th triode, the 4th triode is penetrated
Pole connects the grid of the 2nd MOSFET pipes；
One end of second electric capacity connects the colelctor electrode of the 4th triode and the 3rd dc source respectively
Output end, other end ground connection；
The output end of the drain electrode connection the second voltage source of the 2nd MOSFET pipes, source ground, described second
MOSFET pipes it is opposite with the on state characteristic of the first MOSFET pipes.
Preferably, the circuit also includes being made up of the 5th triode and the 6th triode totem driver element, the
Four dc sources and second resistance, wherein：
One end of the second resistance connects the output end of second source driving signal, the other end connects described the respectively
The base stage of five triodes and the 6th triode；
The colelctor electrode of 5th triode connects the 4th dc source, emitter-base bandgap grading connection connects the first MOSFET respectively
The emitter-base bandgap grading of the grid of pipe, the emitter-base bandgap grading of the 6th triode and first triode；
The grounded collector of 6th triode.
Second aspect according to embodiments of the present invention, a kind of power amplifier is additionally provided, the amplifier includes the present invention
The fast conducting MOSFET amplifying circuits that embodiment first aspect provides.
From above technical scheme, a kind of fast conducting MOSFET amplifying circuits and power provided in an embodiment of the present invention
Amplifier, when the first source driving signal output drive signal, make the first triode ON first, and then the first electric capacity can be to
The gate charges of first MOSFET pipes, this charging is pulsed, because changing with the grid potential of the first MOSFET pipes,
Voltage difference between the emitter-base bandgap grading and colelctor electrode of first triode reduces, and then by, the first electric capacity to the first MOSFET pipes
Charging terminates, and the now drain electrode of the first MOSFET pipes has been in the state of constant conduction with source electrode；Formed by above-mentioned electric capacity
Pulse current, MOSFET pipes can quickly form conducting channel, and then adapt to the Slew Rate of drive signal, and then can solve to drive
If dynamic power supply instantaneously (nanosecond) can not provide grid of enough energy to MOS to MOS grid Path too long, driving power
Pole problem, minimum electric capacity of a stray reactance in parallel between the grid and source electrode of MOSFET pipes of the embodiment of the present invention, can be instantaneous
Driving energy is provided, that is, improves Slew Rate, the power amplifier for making high frequency is easily achieved, can preferably follow drive signal
State, improve the performance of product.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, letter will be made to the required accompanying drawing used in embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the basic structure schematic diagram for the fast conducting MOSFET amplifying circuits that the embodiment of the present invention one provides；
Fig. 2 is the basic structure schematic diagram for the fast conducting MOSFET amplifying circuits that the embodiment of the present invention two provides；
Fig. 3 is the artificial circuit figure for the fast conducting MOSFET amplifying circuits that the embodiment of the present invention two provides；
Fig. 4 is the drive waveforms figure of the N-type metal-oxide-semiconductor of artificial circuit in Fig. 3；
Fig. 5 is the drive waveforms figure of the p-type metal-oxide-semiconductor of artificial circuit in Fig. 3.
Embodiment
Here exemplary embodiment will be illustrated in detail, its example is illustrated in the accompanying drawings.Following description is related to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represent same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent and the consistent all embodiments of the present invention.On the contrary, they be only with it is such as appended
The example of the consistent apparatus and method of some aspects being described in detail in claims, of the invention.
Fig. 1 is the basic structure schematic diagram for the fast conducting MOSFET amplifying circuits that the embodiment of the present invention one provides.Such as Fig. 1
It is shown, the circuit include the first MOSFET pipes MOS1, first voltage source POWER1, the first source driving signal DR1, for for first
The first dc source DC1, the first electric capacity C1 and the first triode Q1 of electric capacity C1 power supplies.
Wherein, the first source driving signal DR1 output end connects the first triode Q1 base stage, the first triode Q1 is penetrated
Pole connects the first MOSFET pipes MOS1 grid；First electric capacity C1 one end connects the first triode Q1 colelctor electrode and respectively
One dc source DC1 output end, other end ground connection；First MOSFET pipes MOS1 drain electrode connection first voltage source POWER1's
Output end, source ground.
The present embodiment is so that the first MOSFET pipes MOS1 is N-type metal-oxide-semiconductor as an example, when the first source driving signal DR1 exports positive drive
During dynamic signal, the first triode Q1 conductings, and then the first electric capacity C1 can to the first MOSFET pipes MOS1 gate charges, and
And this charging is pulsed, because changing with the first MOSFET pipes MOS1 grid potential, the first triode Q1's penetrates
Voltage difference between pole and colelctor electrode reduces, and then by chargings of the first electric capacity C1 to the first MOSFET pipes MOS1 is just tied
Beam, now the first MOSFET pipes MOS1 drain electrode have been in the state of constant conduction with source electrode；The arteries and veins formed by above-mentioned electric capacity
Electric current is rushed, MOSFET pipes can quickly form conducting channel, and then adapt to the Slew Rate of drive signal, can preferably follow drive
The state of dynamic signal, improve the performance of product.
Further, in order to provide the driving force of foregoing circuit, foregoing circuit is also included by the second triode Q2 and the
Totem driver element, the second dc source DC2 for being powered for above-mentioned totem driver element of three triode Q3 compositions
And the first resistor R1 for current limliting.
Wherein, first resistor R1 one end connects the first source driving signal DR1 output end, the other end connects second respectively
Triode Q2 and the 3rd triode Q3 base stage；Second triode Q2 the second dc source DC2 of colelctor electrode connection output end,
Emitter-base bandgap grading connection connects the first MOSFET pipes MOS1 grid, the 3rd triode Q3 emitter-base bandgap grading and penetrating for the first triode Q1 respectively
Pole；3rd triode Q3 grounded collector.
When the first source driving signal DR1 exports positive drive signal, electric current passes through first resistor R1 and the second triode Q2
B poles, E poles, the pressure drop formed turns on the first triode Q1, and the grid of from the first electric capacity C1 to the first MOSFET pipes MOS1 fills
Electricity, this charging is pulsed, is raised with the first MOSFET pipes MOS1 grid potential, flows through first resistor R1 and second
Triode Q2 electric current reduces, and the pressure drop based on this electric current reduces, the first triode Q1 by, charging terminates, now first
MOSFET pipes MOS1 drain electrode has been in the state of constant conduction with source electrode.
Further, in the present embodiment in the first electric capacity C1 include multiple sub- electric capacity in parallel, to increase total capacitance,
Reduce the ESR values of electric capacity, to adapt to HF switch.
Fig. 2 is the basic structure schematic diagram for the fast conducting MOSFET amplifying circuits that the embodiment of the present invention two provides.Such as Fig. 2
Complementary type common source SEPP single ended push-pull power amplification circuit shown, that the circuit is made up of P-channel+N-channel MOS pipe.
The circuit and the difference of embodiment one are, in addition to the 2nd MOSFET pipes MOS2, the second voltage source POWER2,
Two driving signal source DR2, the 3rd dc source DR3, the second electric capacity C2 and the 4th triode for being powered for the second electric capacity C2
Q4。
Wherein, the second source driving signal DR2 output end connects the 4th triode Q4 base stage, the 4th triode Q is penetrated
Pole connects the 2nd MOSFET pipes MOS2 grid；Second electric capacity C2 one end connects the 4th triode Q colelctor electrode and respectively
Three dc source DR3 output end, other end ground connection；2nd MOSFET pipes MOS2 drain electrode connection the second voltage source POWER2's
Output end, source ground.
Likewise, in order to provide the driving force of foregoing circuit, the circuit also includes by the 5th triode Q5 and the six or three
The second resistance R2 of totem driver element, the 4th dc source DC4 and current limliting that pole pipe Q6 is formed.Wherein, second resistance
R2 one end connects the second source driving signal DR2 output end, the other end connects the 5th triode Q5 and the 6th triode respectively
Q6 base stage；5th triode Q5 colelctor electrode connects the 4th dc source D4, emitter-base bandgap grading connection connects the first MOSFET pipes respectively
The emitter-base bandgap grading of MOS1 grid, the 6th triode Q6 emitter-base bandgap grading and the first triode Q1；6th triode Q6 grounded collector.
The present embodiment is so that the first MOSFET pipes MOS1 is N-type metal-oxide-semiconductor, the 2nd MOSFET pipes MOS2 is p-type metal-oxide-semiconductor as an example.
When the first source driving signal DR1 exports positive drive signal, the first triode Q1 conductings, and then the first electric capacity C1 can be to first
MOSFET pipes MOS1 gate charges, also, this charging is pulsed, because the grid with the first MOSFET pipes MOS1
Potential change, voltage difference between the first triode Q1 emitter-base bandgap grading and colelctor electrode reduce, and then by, the first electric capacity C1 to the
One MOSFET pipes MOS1 charging just terminates, and now the first MOSFET pipes MOS1 drain electrode has been in the shape of constant conduction with source electrode
State.
When the second source driving signal DR2 exports negative signal, electric current is by the 6th triode Q6 E poles, B poles and the second electricity
R2 is hindered, the pressure drop formed turns on the 4th triode Q4, and grid impulses of the second electric capacity C2 to the 2nd MOSFET pipes MOS2 is filled
Electricity, being reduced with the 2nd MOSFET pipes MOS2 grid potential, the electric current for flowing through the 6th triode Q6 and second resistance R2 reduces,
Pressure drop based on this electric current reduces, the 4th triode Q4 by, charging terminates, now the 2nd MOSFET pipes MOS2 drain electrode with
Source electrode is in the conduction state
Therefore, the pulse current formed by above-mentioned electric capacity, MOSFET pipes can quickly form conducting channel, Jin Ershi
The Slew Rate of drive signal is answered, can preferably follow the state of drive signal, improves the performance of product.
Using foregoing circuit, the present embodiment also carries out emulation experiment to the circuit in embodiment two.Fig. 3 is implemented for the present invention
The artificial circuit figure for the fast conducting MOSFET amplifying circuits that example two provides.As shown in figure 3, the MOS FET pipes that major loop is selected
For the IXTK170N10P and IXTK170P10P of IXYS companies, grid source electrode parasitic capacitance CISS is respectively 6nf and 12.6nf, voltage
Source 50VDC, load resistance are 1.0 ohm, electric current 50A.Drive circuit signal source is 500KHZ, amplitude 10V square-wave signal,
Resistance value, capacitance and the type design of other elements may be referred to Fig. 3.
Fig. 4 is the drive waveforms figure of the N-type metal-oxide-semiconductor of artificial circuit in Fig. 3.As shown in figure 4, in the first electric capacity C1, first
In the presence of the auxiliary circuit of triode Q1 compositions, the response curve VN1-G-2 after auxiliary circuit is added than addition auxiliary circuit
Preceding response curve VN1-G-1 significantly improves to driving DR+ response speeds, and VN1-G-2 reaches 12V delay 4ns, and VN1-G-1 reaches
To 12V delay 30ns, 7.5 times are improved, is illustrated by the first electric capacity C1 and the first triode Q1 built-up circuits to accelerating N pipes MOS
Response drive signal has obvious effect
Fig. 5 is the drive waveforms figure of the p-type metal-oxide-semiconductor of artificial circuit in Fig. 3.As shown in figure 5, before auxiliary circuit is increased
VP1-G-1 reaches -12V delay 68ns, in the presence of the second electric capacity C2 and the 4th triode Q4 auxiliary circuits, VP1-G-2 couples
Drive signal response speed significantly improves, and VN1-G-2 reaches 12V delay 28ns, improves 2.4 times, illustrates by the second electric capacity C2
There is obvious effect to accelerating P pipes metal-oxide-semiconductor response drive signal with the 4th triode Q4 built-up circuits.
From above simulation result, the quick driving response speed for opening circuit to metal-oxide-semiconductor of MOSFET pipes acts on substantially,
Meanwhile because N pipes MOS parasitic capacitance is small compared with the parasitic capacitance of P pipes, the effect added after auxiliary circuit is preferable.
Based on above-mentioned fast conducting MOSFET amplifying circuits, a kind of power amplifier is additionally provided, the amplifier includes upper
The fast conducting MOSFET amplifying circuits of embodiment offer are provided.
The present embodiment provide amplifying circuit, all using discrete device completion, with it is simple in construction, reliability is high, anti-
The advantages of interference performance is strong, cost is cheap.In actual PCB fabric swatch, consider ceramic disc capacitor being attached near metal-oxide-semiconductor grid, this
Sample can play more preferable effect.The parasitic parameter thus introduced simultaneously is small, does not influence the design parameter of primary circuit.In B classes or
In class ab ammplifier application, this circuit, which suppresses zero crossing distortion, good effect.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment stressed is the difference with other embodiment.
Those skilled in the art will readily occur to the present invention its after considering specification and putting into practice the invention invented here
Its embodiment.The application be intended to the present invention any modification, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and the common knowledge in the art do not invented including the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in the precision architecture for being described above and being shown in the drawings, and
And various modifications and changes can be being carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (6)
1. a kind of fast conducting MOSFET amplifying circuits, it is characterised in that the circuit includes the first MOSFET pipes, first voltage
Source, the first source driving signal, the first dc source, the first electric capacity and the first triode, wherein：
The output end of first source driving signal connects the base stage of first triode, the emitter-base bandgap grading of first triode connects
Connect the grid of the first MOSFET pipes；
One end of first electric capacity connects the output of the colelctor electrode and first dc source of first triode respectively
End, other end ground connection；
The drain electrode of the first MOSFET pipes connects the output end of the first voltage source, source ground.
2. amplifying circuit according to claim 1, it is characterised in that the circuit also includes by the second triode and the 3rd
Totem driver element, the second dc source and the first resistor of triode composition, wherein：
One end of the first resistor connects the output end of first source driving signal, the other end connects the described 2nd 3 respectively
The base stage of level pipe and the 3rd triode；
The colelctor electrode of second triode connects the output end of second dc source, emitter-base bandgap grading connection connects described the respectively
The emitter-base bandgap grading of the grid of one MOSFET pipes, the emitter-base bandgap grading of the 3rd triode and first triode；
The grounded collector of 3rd triode.
3. amplifying circuit according to claim 1, it is characterised in that first electric capacity includes multiple son electricity in parallel
Hold.
4. amplifying circuit according to claim 1, it is characterised in that the circuit also includes the 2nd MOSFET pipes, second
Voltage source, the second source driving signal, the 3rd dc source, the second electric capacity and the 4th triode, wherein：
The output end of second source driving signal connects the base stage of the 4th triode, the emitter-base bandgap grading of the 4th triode connects
Connect the grid of the 2nd MOSFET pipes；
One end of second electric capacity connects the output of the colelctor electrode and the 3rd dc source of the 4th triode respectively
End, other end ground connection；
The drain electrode of the 2nd MOSFET pipes connects the output end of the second voltage source, source ground, the 2nd MOSFET
Pipe it is opposite with the on state characteristic of the first MOSFET pipes.
5. amplifying circuit according to claim 4, it is characterised in that the circuit also includes by the 5th triode and the 6th
Totem driver element, the 4th dc source and the second resistance of triode composition, wherein：
One end of the second resistance connects the output end of second source driving signal, the other end connects the described 5th 3 respectively
The base stage of level pipe and the 6th triode；
The colelctor electrode of 5th triode connects the 4th dc source, emitter-base bandgap grading connection connects the first MOSFET pipes respectively
The emitter-base bandgap grading of grid, the emitter-base bandgap grading of the 6th triode and first triode；
The grounded collector of 6th triode.
6. a kind of power amplifier, it is characterised in that amplify electricity including any described fast conducting MOSFET of claim 1-5
Road.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710787527.7A CN107342742A (en) | 2017-09-04 | 2017-09-04 | A kind of fast conducting MOSFET amplifying circuits and power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710787527.7A CN107342742A (en) | 2017-09-04 | 2017-09-04 | A kind of fast conducting MOSFET amplifying circuits and power amplifier |
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| CN107342742A true CN107342742A (en) | 2017-11-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114640329A (en) * | 2022-05-18 | 2022-06-17 | 深圳市时代速信科技有限公司 | Drive circuit, drive chip and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055452A (en) * | 2009-11-05 | 2011-05-11 | 联创汽车电子有限公司 | N-type channel MOS transistor driving circuit |
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN204481779U (en) * | 2015-04-13 | 2015-07-15 | 刘义冬 | A kind of GaN microwave power amplifier high-speed pulse modulator |
| CN207150543U (en) * | 2017-09-04 | 2018-03-27 | 云南电网有限责任公司电力科学研究院 | A kind of fast conducting MOSFET amplifying circuits and power amplifier |
-
2017
- 2017-09-04 CN CN201710787527.7A patent/CN107342742A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055452A (en) * | 2009-11-05 | 2011-05-11 | 联创汽车电子有限公司 | N-type channel MOS transistor driving circuit |
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN204481779U (en) * | 2015-04-13 | 2015-07-15 | 刘义冬 | A kind of GaN microwave power amplifier high-speed pulse modulator |
| CN207150543U (en) * | 2017-09-04 | 2018-03-27 | 云南电网有限责任公司电力科学研究院 | A kind of fast conducting MOSFET amplifying circuits and power amplifier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114640329A (en) * | 2022-05-18 | 2022-06-17 | 深圳市时代速信科技有限公司 | Drive circuit, drive chip and electronic equipment |
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Inventor after: Xu Shoudong Inventor after: Liu Mingqun Inventor after: Zhao Yanpeng Inventor after: Wang Shaobo Inventor after: Ren Zhijun Inventor after: Li Shengnan Inventor after: Chen Yong Inventor after: Zhou Wenwen Inventor after: Guo Cheng Inventor after: Zhang Li Inventor after: Zhou Xin Inventor after: Li Junpeng Inventor after: Xing Chao Inventor before: Xu Shoudong Inventor before: Chen Yong Inventor before: Li Shengnan Inventor before: Zhang Li Inventor before: Li Junpeng |
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