CN113991602B - Parameter design method for soft turn-off driving circuit of solid-state direct-current circuit breaker - Google Patents

Parameter design method for soft turn-off driving circuit of solid-state direct-current circuit breaker Download PDF

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CN113991602B
CN113991602B CN202111215868.XA CN202111215868A CN113991602B CN 113991602 B CN113991602 B CN 113991602B CN 202111215868 A CN202111215868 A CN 202111215868A CN 113991602 B CN113991602 B CN 113991602B
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朱学忠
陈仪伟
周洲
袁刘东
周逸
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Nanjing University of Aeronautics and Astronautics
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches

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Abstract

The invention discloses a soft turn-off driving circuit of a solid-state direct-current circuit breaker and a parameter design method thereof. The invention can not only quickly respond to external turn-off signals, but also effectively inhibit instantaneous overvoltage caused by line inductance during turn-off by means of two-stage impedance variation; the inductive energy is dissipated inside the semiconductor device, so that an external buffer circuit is not needed, the system structure can be simplified, and the system volume is reduced; the problems that the overvoltage clamping amplitude is too high and LC oscillation is introduced in other overvoltage suppression schemes are solved; the structure is simple and reliable, and the realization is easy.

Description

Parameter design method for soft turn-off driving circuit of solid-state direct-current circuit breaker
Technical Field
The invention relates to a soft turn-off driving circuit of a solid-state direct-current circuit breaker and a parameter design method thereof, belonging to the technical field of solid-state direct-current circuit breakers.
Background
The direct current circuit breaker (SSCB) is one of the key devices of the direct current power grid, and plays roles in quickly cutting off a fault line and preventing fault diffusion. Compared with a traditional mechanical circuit breaker, the solid-state direct-current circuit breaker based on the power semiconductor device has remarkable advantages in the aspects of fault response time and fault clearing speed.
However, due to the existence of line distributed inductance, the rapidly decreasing current when the SSCB is turned off causes the power device to suffer from extremely high transient overvoltage, which may cause overvoltage breakdown of the power device and damage other devices in the SSCB, even upstream sensitive equipment.
Nowadays, it is a common practice to connect a snubber branch in parallel at two ends of a power semiconductor device, such as a resistor-capacitor-diode (RCD) snubber circuit, a Metal Oxide Varistors (MOV), to limit the magnitude of an overvoltage while absorbing the remaining energy in the line, thereby effectively protecting the power device. However, the introduction of the RCD snubber circuit causes the problem of LC oscillation, and the metal oxide varistor can only suppress the overvoltage to a level of 2 to 3 times the system voltage.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the soft turn-off driving circuit of the solid-state direct current breaker and the parameter design method thereof are provided, the power semiconductor device is turned off slowly to work in a linear region, and further, the falling rate of the circuit current can be controlled by controlling the gate pole or the gate voltage of the voltage-controlled semiconductor device, so that the purpose of suppressing the transient overvoltage is achieved.
The invention adopts the following technical scheme for solving the technical problems:
a soft turn-off driving circuit of a solid-state direct current circuit breaker comprises a controller, a driving chip, a soft turn-off driving circuit and a voltage-controlled semiconductor device, wherein the soft turn-off driving circuit comprises a turn-on branch, a turn-off branch and a first parallel capacitor, the turn-off branch comprises a first diode, a first current-limiting resistor and a Zener diode, and the turn-on branch comprises a second diode and a second current-limiting resistor; the anode of the Zener diode is connected with the output end of the driving chip, the cathode of the Zener diode is connected with the cathode of the first diode, the first current-limiting resistor is connected with the Zener diode in parallel, one end of the second current-limiting resistor is connected with the output end of the driving chip, the other end of the second current-limiting resistor is connected with the anode of the second diode, one end of the first parallel capacitor is connected with the cathode of the second diode, the anode of the first diode and the gate pole or the grid pole of the voltage-controlled semiconductor device, and the other end of the first parallel capacitor is connected with the emitter or the source pole of the voltage-controlled semiconductor device;
the first diode enables the current output by the driving chip to flow through the opening branch; the second diode enables the current output by the driving chip to flow through the turn-off branch circuit.
As a preferable scheme of the circuit, the voltage-controlled semiconductor device is one of an IGBT switching tube, a Si IGCT, a Si MOSFET, a Si JFET, a SiC MOSFET and a GaN HEMT.
The parameter design method of the soft turn-off driving circuit based on the solid-state direct current breaker comprises the following steps:
step 1, determining performance indexes required by parameter design of a soft turn-off driving circuit, comprising the following steps: system voltage V s Line distributed inductance estimate L s Maximum allowable current I cmax Current reduction rate lambda and rated load R Load (ii) a Wherein:
the current reduction rate lambda refers to the design value Vo of the maximum allowable overvoltage vmax Determining:
Figure BDA0003310773380000021
wherein ic is the collector or drain current of the voltage-controlled semiconductor device;
maximum overvoltage V borne by the voltage-controlled semiconductor device when the fault current of the interphase short circuit is switched off cemax Comprises the following steps:
Figure BDA0003310773380000022
step 2, designing parameters of the soft turn-off driving circuit, specifically:
according to V cemax 、I cmax Performing on-state thermal power consumption to model the voltage-controlled semiconductor device, and acquiring a transmission characteristic curve of the voltage-controlled semiconductor device after model selection;
during soft turn-off, the collector or drain current is approximated by the expression, denoted as g (-):
i c ＝g(v ge )＝f(v ge ，V ce(const2) )·ε·(V ce(const1) -V ce(const2) )
wherein v is ge Is the gate electrode or gate electrode voltage of the voltage control type semiconductor device; f (-) represents a function of the transmission characteristicA relationship; constant value V ce(const1) Soft off period v ce Average value of v ce Is the voltage across collector and emitter, V ce(const2) Taking v of the transmission curve ce At any given value, epsilon is a correction coefficient;
i is obtained according to the following formula cmax Corresponding V ge1 And V ge1 Slope β of (c):
I cmax ＝g(v ge )| vge＝vge1
Figure BDA0003310773380000031
the zener voltage V of said zener diode Z Is obtained by the following formula:
V Z ＝V ge1 -v D1 -V OL
wherein, V ge1 For the corresponding I in the transmission characteristic curve cmax V is ge Value, v D1 Is the conduction voltage drop of the first diode, V OL Is the low level voltage amplitude of the driving chip;
the values of the first current limiting resistor and the first parallel capacitor are determined by the following formula:
Figure BDA0003310773380000032
Figure BDA0003310773380000033
wherein R is 1 、C 1 Respectively, of a first current-limiting resistor and a first parallel capacitor, V ge2 A slope compensation point;
the type selection of the first diode and the second diode can meet the withstand voltage condition;
and 3, performing thermal check according to the parameters designed in the step 2, specifically:
during soft turn-off period, the voltage-controlled semiconductor device is switched onThe instantaneous thermal power of the element is regarded as a rectangular pulse, and the amplitude is averaged
Figure BDA0003310773380000034
Comprises the following steps:
Figure BDA0003310773380000035
/>
wherein, I scmax Is the maximum short circuit current;
pulse width t width Comprises the following steps:
Figure BDA0003310773380000036
looking up the manual of the voltage-controlled semiconductor device to obtain its transient thermal impedance curve Z thjc (T), the junction temperature change Delta T of the voltage-controlled semiconductor device in the soft turn-off process j Comprises the following steps:
Figure BDA0003310773380000037
determining Delta T according to the ambient temperature and the maximum allowable temperature of the device j And (4) judging whether the current is reasonable or not, if not, returning to the step 1 to correct the current reduction rate lambda until the requirement is met.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
1. the invention can not only quickly respond to external turn-off signals, but also effectively inhibit instantaneous overvoltage caused by line inductance during turn-off by means of two-stage impedance variation; the power semiconductor device is turned off slowly to work in a linear region, and further, the falling rate of the circuit current can be controlled by controlling the gate voltage or the grid voltage of the semiconductor device, so that the purpose of suppressing the transient overvoltage is achieved.
2. The inductive energy is dissipated in the semiconductor device, so that an external buffer circuit is not needed, and the system complexity, the volume and the cost of the solid-state direct current breaker can be reduced.
3. The invention avoids the problems of too large overvoltage amplitude limit and LC oscillation introduction in other overvoltage suppression schemes; the structure is simple and reliable, and the realization is easy.
Drawings
Fig. 1 is a structural diagram of a soft-off driving circuit of a solid-state dc circuit breaker according to the present disclosure.
Fig. 2 is a diagram of the theoretical waveform associated with the power semiconductor device during soft turn-off of the present invention.
Fig. 3 is a system loop of a typical circuit breaker.
Fig. 4 is a transfer characteristic curve of a typical semiconductor device.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The invention discloses a soft turn-off driving circuit of a solid-state direct-current circuit breaker, wherein the solid-state direct-current circuit breaker comprises a controller, a driving chip, a soft turn-off driving circuit and a voltage-controlled semiconductor device, the soft turn-off driving circuit comprises a turn-on branch, a turn-off branch and a first parallel capacitor, the turn-off branch comprises a first diode, a first current-limiting resistor and a Zener diode, and the turn-on branch comprises a second diode and a second current-limiting resistor; the anode of the Zener diode is connected with the output end of the driving chip, the cathode of the Zener diode is connected with the cathode of the first diode, the first current-limiting resistor is connected with the Zener diode in parallel, one end of the second current-limiting resistor is connected with the output end of the driving chip, the other end of the second current-limiting resistor is connected with the anode of the second diode, one end of the first parallel capacitor is connected with the cathode of the second diode, the anode of the first diode and the gate pole or the grid pole of the voltage-controlled semiconductor device, and the other end of the first parallel capacitor is connected with the emitter or the source pole of the voltage-controlled semiconductor device; the first diode enables the current output by the driving chip to flow through the opening branch; the second diode enables the current output by the driving chip to flow through the turn-off branch.
The driving chip has no special requirement, can normally drive the semiconductor device, and also comprises a switch circuit consisting of discrete devices. The first parallel capacitor avoids the problem of false conduction of the voltage-controlled semiconductor device and also plays a role in slope compensation.
The voltage control type semiconductor device is one of an IGBT switch tube, a Si IGCT, a Si MOSFET, a Si JFET, a SiC MOSFET and a GaN HEMT.
Because di/dt is inhibited, corresponding dv/dt is also inhibited, and the requirement of the semiconductor device on an isolated power supply is reduced; and an additional buffer device is not required to be added, so that the complexity of the system is reduced, and the overall cost is saved.
As shown in fig. 1, a connection diagram of the soft-off driving circuit, the driving chip and the voltage-controlled semiconductor device is shown, and the soft-off driving circuit is shown in a dotted line. The turn-off branch comprises a first diode D1, a Zener diode Z and a first current-limiting resistor R1; the switching-on branch comprises a second diode D2 and a second current-limiting resistor R2; the first diode D1 enables the driving output current (source current) to only flow through the switching-on branch, the second diode D2 enables the driving input current (sink current) to only flow through the switching-off branch, and the diodes are integrated in some driving chips, so that extra addition is not needed. R2 and D2 form a first-order opening branch circuit which is used for current limiting and directional conduction; r1 and Z, D constitute a second-order turn-off branch circuit, and di/dt control of the semiconductor device is realized through two sections of variable impedances, so that the theoretical effect shown in figure 2 is realized.
The working principle of the soft turn-off driving circuit is as follows: (1) The drive chip outputs a high level V after receiving a turn-on signal sent by the superior controller OH When current flows through R2-D2-C1, the switching tube is normally switched on; (2) The drive chip outputs a low level V after receiving the turn-off signal OL Gate voltage v of the switching tube ge The current begins to drop, and the sink current only flows through the cut-off branch; due to the presence of the Zener diode, when (v) ge -V OL ) Greater than its zener voltage V Z When the impedance of the branch circuit is small; when (v) ge -V OL ) Less than V Z The turn-off branch impedance is approximately R1.
Thus, the gate voltage v ge The descending process is divided into two stages: (1) v. of ge ≥V OL +V Z ：v ge The circuit breaker quickly descends so as to enable the switch tube to enter a linear area as soon as possible, and the current of the circuit breaker is controlled to descend in response to a turn-off signal; (2) v. of ge ＜V OL +V Z ：v ge The fast drop and the control current drop slowly to restrain the transient overvoltage born by the power semiconductor device.
For convenience of explanation, the voltage-controlled semiconductor device is exemplified by an IGBT whose three poles are a collector (C), an emitter (E), and a gate (G), i g Is the gate current, v ce Is the voltage across the collector and emitter.
Meanwhile, the following relationships exist in each stage:
Figure BDA0003310773380000061
in the formula, v c V can be considered as the voltage of the first parallel capacitor C1 c ＝v ge ，v ge Is the switch tube gate voltage; v. of z The zener diode voltage.
The invention completes the parameter design of each device and realizes the function according to the following steps:
(1) Determining performance indicators
The performance indicators required to design a soft-off circuit are: system voltage V s Line distributed inductance estimate L s Maximum allowable current I cmax Current reduction rate λ, rated load R Load 。
Wherein the current reduction rate lambda can be referenced to a design value V for a maximum permissible overvoltage ovmax Determining:
Figure BDA0003310773380000062
with reference to the system loop shown in fig. 3, the maximum overvoltage v on the line ov Comprises the following steps:
Figure BDA0003310773380000063
it is to be noted that when the fault current of the inter-phase short circuit is turned off, the maximum overvoltage experienced by the semiconductor device is:
Figure BDA0003310773380000064
(2) Parametric design of devices
First according to V cemax 、I cmax And on-state thermal power consumption to type the power semiconductor device. Thereafter, a transfer characteristic curve of the semiconductor device is obtained (generally, a complete transfer characteristic can be obtained by looking up a device manual and performing curve fitting). As can be seen in FIG. 4, the collector current i c Voltage v of the receiving gate ge Collector-emitter voltage v ce Junction temperature T vj Influence, noted as:
i c ＝f(v ge ，v ce ，T vj )
the effect of junction temperature variation is small compared to the gate voltage and is temporarily disregarded; during soft off period, v ce Transformation pair i c The influence of (a) is not great, and a linear approximation can be made:
i c ＝g(v ge )＝f(v ge ，V ce(const2) )·ε·(V ce(const1) -V ce(const2) )
wherein the constant value V ce(const1) Soft off period v ce Average value of (1), V ce(const2) Taking v of the transmission characteristic curve provided by the manufacturer ce Any given value; epsilon is a correction coefficient, and an output characteristic curve of the device can be checked to obtain. g (v) ge ) Fitting can be done with a two-term gaussian function (method is not exclusive):
Figure BDA0003310773380000071
wherein, a 1 、a 2 、b 1 、b 2 、c 1 、c 2 As fitting coefficient, V ge(max) For maximum gate voltage of switching tubeFrom device to device, to obtain I cmax Corresponding V ge1 And the slope in the vicinity of the point
Figure BDA0003310773380000072
The zener voltage V of the zener diode Z then Z Can be obtained by the following formula:
V Z ＝V ge1 -v D1 -V OL
the values of the resistor R1 and the capacitor C1 are determined by the following formula:
Figure BDA0003310773380000073
in order for the capacitor C1 to perform the slope compensation function, the following equation is considered:
Figure BDA0003310773380000074
wherein, V ge2 For the slope compensation value, take V ge(th) At an arbitrary point nearby, V ge(th) The approximate ranges of R1 and C1 can be determined from the above two equations for the gate threshold voltage of the semiconductor device.
Secondly, the type selection of the diodes D1 and D2 can meet the withstand voltage condition; the resistance R2 can be properly valued, and the setting formula of the R1 can also be referred.
(3) Thermal check
Because the semiconductor device operates in the linear region during soft turn-off, the instantaneous thermal power is extremely high and thermal calibration is required.
Consider the most severe short circuit situation: interphase short circuit, the impedance is approximately 0; maximum short-circuit current of I scmax . During soft-off, the instantaneous thermal power is seen as a rectangular pulse with the amplitude averaged
Figure BDA0003310773380000075
Comprises the following steps:
Figure BDA0003310773380000076
the pulse width is:
Figure BDA0003310773380000077
looking up the handbook of semiconductor device to obtain its transient thermal impedance curve Z thjc (T) the junction temperature variation Δ T of the power semiconductor device during soft turn-off j Comprises the following steps:
Figure BDA0003310773380000078
Z thjc (T) is the transient thermal impedance function of the semiconductor device, Δ T j Is the junction temperature variation of the semiconductor device.
From the ambient temperature and the maximum allowable device temperature, Δ T may be determined j And if the current reduction rate is not reasonable, the current reduction rate lambda can be further corrected to meet the requirement.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.

Claims (2)

1. A parameter design method of a soft turn-off driving circuit of a solid-state direct-current circuit breaker comprises a controller, a driving chip, the soft turn-off driving circuit and a voltage-controlled semiconductor device, wherein the soft turn-off driving circuit comprises a turn-on branch circuit, a turn-off branch circuit and a first parallel capacitor, the turn-off branch circuit comprises a first diode, a first current-limiting resistor and a Zener diode, and the turn-on branch circuit comprises a second diode and a second current-limiting resistor; the anode of the Zener diode is connected with the output end of the driving chip, the cathode of the Zener diode is connected with the cathode of the first diode, the first current-limiting resistor is connected with the Zener diode in parallel, one end of the second current-limiting resistor is connected with the output end of the driving chip, the other end of the second current-limiting resistor is connected with the anode of the second diode, one end of the first parallel capacitor is connected with the cathode of the second diode, the anode of the first diode and the gate pole or the grid pole of the voltage-controlled semiconductor device, and the other end of the first parallel capacitor is connected with the emitter or the source pole of the voltage-controlled semiconductor device; the first diode enables the current output by the driving chip to flow through the opening branch; the second diode enables the current output by the driving chip to flow through the turn-off branch circuit;
the parameter design method is characterized by comprising the following steps:
step 1, determining performance indexes required by parameter design of a soft turn-off driving circuit, comprising the following steps: system voltage V s Line distributed inductance estimate L s Maximum allowable current I cmax Current reduction rate lambda and rated load R Load (ii) a Wherein:
the current reduction rate lambda is referenced to a design value V of the maximum allowable overvoltage ovmax Determining:
Figure FDA0004014362020000011
wherein i c Is the collector or drain current of the voltage control type semiconductor device;
maximum overvoltage V borne by the voltage-controlled semiconductor device when the fault current of the interphase short circuit is switched off cemax Comprises the following steps:
Figure FDA0004014362020000012
step 2, designing parameters of the soft turn-off driving circuit, specifically:
according to V cemax 、I cmax Performing on-state thermal power consumption to model the voltage-controlled semiconductor device, and acquiring a transmission characteristic curve of the voltage-controlled semiconductor device after model selection;
during soft turn off, the collector or drain current is expressed as g (·):
i c ＝g(v ge )＝f(v ge ，V ce(const2) )·ε·(V ce(const1) -V ce(const2) )
wherein v is ge Is the gate electrode or gate electrode voltage of the voltage control type semiconductor device; f (-) represents a functional relationship of the transmission characteristics; constant value V ce(const1) Soft off period v ce Average value of v ce Is the voltage across collector and emitter, V ce(const2) Taking v of the transmission curve ce At any given value, epsilon is a correction coefficient;
i is obtained according to the following formula cmax Corresponding V ge1 And V ge1 Slope β of (c):
Figure FDA0004014362020000021
Figure FDA0004014362020000022
the zener voltage V of said zener diode Z Is obtained by the following formula:
V Z ＝V ge1 -v D1 -V OL
wherein, V ge1 For the corresponding I in the transmission characteristic curve cmax V is ge Value v D1 Is the conduction voltage drop of the first diode, V OL Is the low level voltage amplitude of the driver chip;
the values of the first current limiting resistor and the first parallel capacitor are determined by the following formula:
Figure FDA0004014362020000023
Figure FDA0004014362020000024
wherein R is 1 、C 1 Respectively, of a first current-limiting resistor and a first parallel capacitor, V ge2 A slope compensation point;
the type selection of the first diode and the second diode meets the withstand voltage condition;
and 3, performing thermal check according to the parameters designed in the step 2, specifically:
during the soft turn-off period, the instantaneous thermal power of the voltage-controlled semiconductor device is regarded as rectangular pulse, and the amplitude value is averaged
Figure FDA0004014362020000025
Comprises the following steps:
Figure FDA0004014362020000026
wherein, I scmax Is the maximum short circuit current;
pulse width t width Comprises the following steps:
Figure FDA0004014362020000027
looking up the manual of the voltage-controlled semiconductor device to obtain its transient thermal impedance curve Z thjc (T), the junction temperature change Delta T of the voltage-controlled semiconductor device in the soft turn-off process j Comprises the following steps:
Figure FDA0004014362020000028
determining delta T according to the ambient temperature and the maximum allowable temperature of the device j And (4) judging whether the current is reasonable or not, if not, returning to the step 1 to correct the current reduction rate lambda until the requirement is met.
2. The parametric design method according to claim 1, wherein the voltage-controlled semiconductor device is one of an IGBT switch, a Si IGCT, a Si MOSFET, a Si JFET, a SiC MOSFET, and a gan hemt.
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CN114580332B (en) * 2022-05-06 2022-08-12 深圳市威兆半导体股份有限公司 Simulation method of super junction MOSFET device
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103944549A (en) * 2014-04-03 2014-07-23 南京航空航天大学 High-reliability MOSFET drive circuit
CN107024653A (en) * 2017-06-14 2017-08-08 南京南瑞继保电气有限公司 The on-line measuring device and method of a kind of high voltage DC breaker
CN110266296A (en) * 2019-06-24 2019-09-20 北京机械设备研究所 The driving circuit of IGBT a kind of and IGBT guard method
CN110943440A (en) * 2019-12-13 2020-03-31 浙江大维高新技术股份有限公司 Medium-high voltage bidirectional full-solid-state direct current circuit breaker and high-potential energy supply device thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02184220A (en) * 1989-01-09 1990-07-18 Mitsubishi Electric Corp Multi-terminal dc circuit breaker
WO2017025927A1 (en) * 2015-08-11 2017-02-16 Efacec Energia, Máquinas E Equipamentos Eléctricos, S.A. Fault current managing branch for surge-less current interruption in dc system
CN105846665B (en) * 2016-04-28 2018-12-07 南京航空航天大学 A kind of normal open type SiC JFET driving circuit with self-protection function
CN106991221B (en) * 2017-03-24 2020-04-24 清华大学 Segmented broken line modeling method based on transient physical process of IGBT device
CN107317571A (en) * 2017-07-03 2017-11-03 重庆大学 A kind of all solid state dc circuit breaker SiC MOSFET drive systems and control method
CN107493096A (en) * 2017-08-18 2017-12-19 全球能源互联网研究院 A kind of driving insulating power supply for crimp type IGBT
CN110048699B (en) * 2019-05-21 2023-04-11 哈尔滨工业大学 Gate drive circuit for restraining bridge arm crosstalk of GaN half-bridge module
CN111585266B (en) * 2020-04-20 2023-05-30 上海泓语电气技术有限公司 Direct-current power distribution electronic soft start switch
CN113098240B (en) * 2021-03-31 2024-01-16 西北工业大学 Driving circuit of Casode type GaN power device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103944549A (en) * 2014-04-03 2014-07-23 南京航空航天大学 High-reliability MOSFET drive circuit
CN107024653A (en) * 2017-06-14 2017-08-08 南京南瑞继保电气有限公司 The on-line measuring device and method of a kind of high voltage DC breaker
CN110266296A (en) * 2019-06-24 2019-09-20 北京机械设备研究所 The driving circuit of IGBT a kind of and IGBT guard method
CN110943440A (en) * 2019-12-13 2020-03-31 浙江大维高新技术股份有限公司 Medium-high voltage bidirectional full-solid-state direct current circuit breaker and high-potential energy supply device thereof

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