CN107493096A - A kind of driving insulating power supply for crimp type IGBT - Google Patents

A kind of driving insulating power supply for crimp type IGBT Download PDF

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Publication number
CN107493096A
CN107493096A CN201710712495.4A CN201710712495A CN107493096A CN 107493096 A CN107493096 A CN 107493096A CN 201710712495 A CN201710712495 A CN 201710712495A CN 107493096 A CN107493096 A CN 107493096A
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CN
China
Prior art keywords
circuit
power supply
crimp type
driving
pwm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710712495.4A
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Chinese (zh)
Inventor
蔡博
徐云飞
黄杰
任西周
周哲
张淆雨
雷晰
李卫国
乔光尧
康伟
曾洪涛
石秋雨
孙海江
刘婷婷
陈明庆
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State Grid Corp of China SGCC
State Grid Zhejiang Electric Power Co Ltd
Global Energy Interconnection Research Institute
Original Assignee
State Grid Corp of China SGCC
State Grid Zhejiang Electric Power Co Ltd
Global Energy Interconnection Research Institute
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Publication date
Application filed by State Grid Corp of China SGCC, State Grid Zhejiang Electric Power Co Ltd, Global Energy Interconnection Research Institute filed Critical State Grid Corp of China SGCC
Priority to CN201710712495.4A priority Critical patent/CN107493096A/en
Publication of CN107493096A publication Critical patent/CN107493096A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H02J5/005—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K7/00—Modulating pulses with a continuously-variable modulating signal
    • H03K7/08—Duration or width modulation ; Duty cycle modulation

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  • Dc-Dc Converters (AREA)

Abstract

The present invention provides a kind of driving insulating power supply for crimp type IGBT, including high potential self-energizing circuit, pwm control circuit and main body circuit；Main body circuit includes flyback isolating transformer, on-off circuit and active clamp circuit；High potential self-energizing circuit is that pwm control circuit and main body circuit are powered；Pwm control circuit exports two-way pwm signal, wherein pwm signal access on-off circuit all the way, another way pwm signal access active clamp circuit, finally provide simple and reliable driving insulating power supply for crimp type IGBT.The method being combined provided by the present invention for crimp type IGBT driving insulating power supply using function and performance, parameter designing is more accurate, performance is had been further upgraded, and by the current density of the equivalent silicon rubber hookup wire of the current density of wire, the structure design of crimp type IGBT driving insulating power supply is enormously simplify, it is convenient to use.

Description

A kind of driving insulating power supply for crimp type IGBT
Technical field
The present invention relates to electric and electronic technical field, and in particular to a kind of driving insulating power supply for crimp type IGBT.
Background technology
It is to provide reliable electric energy for IGBT driving board to drive insulating power supply main function, and IGBT driving board is crimp type again IGBT issues trigger signal.With the equipment voltage class more and more higher such as voltage source commutation valve, dc circuit breaker, in crimp type IGBT number is more and more when IGBT connects, and each IGBT driving board is suspended in different voltage class, to ensure IGBT The reliability of driving plate, driving insulating power supply need to meet the higher and higher performance being dielectrically separated from.IGBT driving board input work Rate very little, typically in 3W or so, and the fluctuation of IGBT driving board input power probably influences the normal work of IGBT driving board Make, and then influence crimp type IGBT work, and influence the reliability of IGBT series devices, therefore drive insulating power supply to have Wider input voltage range and stable power output.In the higher IGBT tandem type converters of voltage class, driving Insulating power supply working environment is more severe, and electromagnetic interference is big, while the switching frequency of power supply is higher, causes to drive insulating power supply more It is vulnerable to the influence of distribution capacity, distribution capacity is bigger, and power-efficient is lower, and reliability is lower.
Although the correlative study for the power supply being directed under application-specific scene in the prior art be present, such as 500kV solid-states Mark Generator IGBT high-voltage isolatings power supply, the IGBT driving powers in frequency converter, Motor for Electric Automobile driver and small-power The driving power of brushless direct-current controller, but these driving powers use simple optocoupler isolation and amplifier more, in the absence of high potential every The interlock circuit of crimp type IGBT driving power is there is no from function, and at present in market.
The content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a kind of driving isolation electricity for crimp type IGBT Source, provided with high potential self-energizing circuit, pwm control circuit and main body circuit, main body circuit therein includes flyback isolation transformation Device, on-off circuit and active clamp circuit, simple and reliable power supply is provided for crimp type IGBT.
In order to realize foregoing invention purpose, the present invention adopts the following technical scheme that：
The present invention provides a kind of driving insulating power supply for crimp type IGBT, including high potential self-energizing circuit, PWM control Circuit and main body circuit processed；The main body circuit includes flyback isolating transformer, on-off circuit and active clamp circuit；It is described Pwm control circuit includes feed forward circuit；
The high potential self-energizing circuit is used to power for pwm control circuit and main body circuit；
The pwm control circuit is used to produce two-way pwm signal according to feed forward circuit, wherein pwm signal access is opened all the way Powered-down road, another way pwm signal access active clamp circuit；
The flyback isolating transformer is used to be isolated pwm signal and drive signal；
The on-off circuit is amplified for will access pwm signal therein, and is given birth to according to pwm signal therein is accessed Into drive signal；
The active clamp circuit is used for according to the peak voltage for accessing pwm signal absorption IGBT therein.
The pwm control circuit also includes current foldback circuit, under-voltage protecting circuit, clock circuit and pwm chip；
The pwm chip include ramp input pin, command value input pin, chip-select pin, under-voltage locking pin, Clock pins, the first output pin and the second output pin.
The feed forward circuit is connected with ramp input pin and command value input pin, and the current foldback circuit selects with piece Pin is connected, and the under-voltage protecting circuit is connected with under-voltage locking pin, and the clock circuit is connected with clock pins, described to open Powered-down road is connected with the first output pin, and the active clamp circuit is connected with the second output pin.
The flyback isolating transformer includes magnet ring, high pressure winding and diode DX；
The magnet ring includes the first primary port, the second primary port, the first secondary ports and second subprime port, described First primary port and second subprime port are different name end, and second primary port and the first secondary ports are Same Name of Ends.
First primary port connects high potential self-energizing circuit, the second primary port connecting valve circuit, institute State the first secondary ports connection diode DXPositive pole, the diode DXNegative pole for flyback isolating transformer output voltage Positive pole, the second subprime port are the negative pole of flyback isolating transformer output voltage.
The high pressure winding uses silicon rubber hookup wire；The silicon rubber hookup wire includes wire and insulating barrier；
The current density of the silicon rubber hookup wire is calculated as follows：
Wherein, JeRepresent the current density of silicon rubber hookup wire, r1Represent the radius of wire, r2The thickness of insulating barrier is represented, J represents the current density of wire.
The on-off circuit includes the first metal-oxide-semiconductor and current-limiting resistance RN；
The grid of first metal-oxide-semiconductor is connected with the first output pin of pwm chip, while connects current-limiting resistance RN First end；The source electrode of first metal-oxide-semiconductor is connected with the current foldback circuit of pwm control circuit, while connects current-limiting resistance RNThe second end；The drain electrode of first metal-oxide-semiconductor is connected with the second primary port of flyback isolating transformer.
The active clamp circuit includes clamp capacitor CP1, driving discharge capacity CP2, driving discharge resistance RP, diode DP With the second metal-oxide-semiconductor；
The drain electrode of second metal-oxide-semiconductor passes through clamp capacitor CP1Connect the second primary port of flyback isolating transformer；Institute The grid of the second metal-oxide-semiconductor is stated by driving discharge capacity CP2The second output pin of pwm chip is connected, while connects driving Discharge resistance RPFirst end and diode DPAnode, the driving discharge resistance RPThe second end and diode DPNegative electrode And second metal-oxide-semiconductor source grounding.
First metal-oxide-semiconductor is the enhanced MOSFET of N-channel, and second metal-oxide-semiconductor is P-channel enhancement type MOSFET.
Compared with immediate prior art, technical scheme provided by the invention has the advantages that：
High potential self-energizing circuit, PWM controls are provided with provided by the present invention for crimp type IGBT driving insulating power supply Circuit and main body circuit, main body circuit therein include flyback isolating transformer, on-off circuit and active clamp circuit, for crimping Type IGBT provides simple and reliable driving insulating power supply；
Utilized provided by the present invention for the flyback isolating transformer in crimp type IGBT driving insulating power supply and improve AP Method is designed, and is r specifically by radius1The current density, J of wire to be equivalent to radius be r1+r2Wire current density, It is equivalent to the current density, J of silicon rubber hookup wiree, the structure that enormously simplify crimp type IGBT driving insulating power supply sets Meter, it is convenient to use；
Not only there are high potential isolation features provided by the present invention for crimp type IGBT driving insulating power supply, and fill up The blank of driving power driving insulating power supply without crimp type IGBT in current market.
Brief description of the drawings
Fig. 1 is the driving insulating power supply structure chart for being used for crimp type IGBT in the embodiment of the present invention；
Fig. 2 is high potential self-energizing circuit schematic diagram in parallel with the electric capacity in capacitance-resistance loop in the embodiment of the present invention；
Fig. 3 is pwm control circuit structure chart in the embodiment of the present invention；
Fig. 4 is flyback isolating transformer structure chart in the embodiment of the present invention；
Fig. 5 is silicon rubber hookup wire structure chart in the embodiment of the present invention；
Fig. 6 is switching circuit structure figure in the embodiment of the present invention；
Fig. 7 is active clamp circuit structure chart in the embodiment of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
The embodiment of the present invention provide it is a kind of for crimp type IGBT driving insulating power supply concrete structure as shown in figure 1, It includes high potential self-energizing circuit, pwm control circuit and main body circuit；Main body circuit therein includes flyback isolation transformation Device, on-off circuit and active clamp circuit；Pwm control circuit therein includes feed forward circuit；
Above-mentioned high potential self-energizing circuit is used to power for pwm control circuit and main body circuit；
Above-mentioned pwm control circuit is used to produce two-way pwm signal according to feed forward circuit, wherein pwm signal accesses all the way On-off circuit, another way pwm signal access active clamp circuit, first via PWM is named as by the pwm signal for accessing on-off circuit Signal, the pwm signal for accessing active clamp circuit is named as the second road pwm signal；
Above-mentioned flyback isolating transformer is used to be isolated first via pwm signal and drive signal, while by second Road pwm signal and drive signal are isolated；
Above-mentioned on-off circuit is used to first via pwm signal being amplified, and is generated and driven according to first via pwm signal Signal, detailed process are：If first via pwm signal is low level, on-off circuit does not generate drive signal, if first via PWM believes Number it is high level, on-off circuit generation drive signal；
Above-mentioned active clamp circuit is used for the peak voltage that IGBT is absorbed according to the second road pwm signal, because IGBT is closed Larger peak voltage is generated when disconnected, so when the second road pwm signal is high level, drive signal meeting caused by on-off circuit IGBT is driven, turns on IGBT, active clamp circuit is absorbable IGBT peak voltage.
It is provided in an embodiment of the present invention for crimp type IGBT driving insulating power supply concrete structure as shown in figure 1, its Mainly include high potential self-energizing circuit, pwm control circuit and main body circuit；Main body circuit therein includes flyback isolation transformation Device, on-off circuit and active clamp circuit；
Above-mentioned high potential self-energizing circuit is mainly used in powering for pwm control circuit and main body circuit, and high potential is certainly Take energy circuit in parallel with the electric capacity in capacitance-resistance loop, as shown in Figure 2.
Above-mentioned pwm control circuit output two-way pwm signal, wherein the switch in pwm signal access main body circuit all the way Circuit, the active clamp circuit that another way pwm signal is accessed in main body circuit.
Above-mentioned pwm control circuit structure chart is as shown in figure 3, it includes peripheral circuit and pwm chip, wherein periphery Circuit includes feed forward circuit, current foldback circuit, under-voltage protecting circuit and clock circuit；
The method that feed forward circuit and under-voltage protecting circuit are combined using function and performance is designed, first according to function Relation between Demand Design circuit components parameter, then according to power dissipation design design parameter value, taken most between function and performance The figure of merit.
Pwm chip therein uses LM5025 chips, and LM5025 chips include ramp input pin RAMP, command value Input pin REF, chip-select pin CS1, chip-select pin CS2, under-voltage locking pin UVLO, clock pins RT, the first output pin OUT_A and the second output pin OUT_B.
Above-mentioned feed forward circuit is connected with the ramp input pin RAMP and command value input pipe REF pin of LM5025 chips, Main body circuit output voltage stabilization during for ensureing the change of high potential self-energizing circuit output；
Above-mentioned current foldback circuit is connected with the chip-select pin CS1 and chip-select pin CS2 of LM5025 chips, for preventing Main body circuit damages because of excessively stream；
Above-mentioned under-voltage protecting circuit is connected with the under-voltage locking pin UVLO of LM5025 chips, for high potential self-energizing Locking LM5025 control circuit when circuit output is too low；
Above-mentioned clock circuit is connected with the clock pins TR of LM5025 chips, and clock is provided for LM5025 chips；
The first above-mentioned output pin OUT_A with on-off circuit with being connected, the second above-mentioned output pin OUT_B with it is active Clamp circuit is connected, for exporting two-way pwm signal.
Flyback isolating transformer structure chart in aforementioned body circuit is as shown in figure 4,1 in Fig. 4 represents the first primary side Mouthful, 2 represent the second primary port, and 3 represent the first secondary ports, and 4 represent second subprime port, and flyback isolating transformer mainly wraps Include magnet ring, high pressure winding and diode DX；
Its middle magnetic ring includes the first primary port, the second primary port, the first secondary ports and second subprime port, wherein The first primary port and second subprime port be different name end, the second primary port and the first secondary ports therein are of the same name End；
Above-mentioned the first primary port connection high potential self-energizing circuit, the second primary port connecting valve circuit, first Secondary ports connection diode DXPositive pole, diode DXNegative pole be flyback isolating transformer output voltage positive pole, second Level port is the negative pole of flyback isolating transformer output voltage.
High pressure winding therein uses silicon rubber hookup wire, and the structure chart of the silicon rubber hookup wire is as shown in figure 5, it includes Wire and insulating barrier；
Flyback isolating transformer is designed using improved AP methods, is r by radius1The current density, J of wire be equivalent to half Footpath is r1+r2Wire current density, that is, be equivalent to the current density, J of silicon rubber hookup wiree, JeIt is calculated as follows：
Wherein, JeRepresent the current density of silicon rubber hookup wire, r1Represent the radius of wire, r2The thickness of insulating barrier is represented, J represents the current density of wire.
Above-mentioned switching circuit structure figure is as shown in fig. 6, it mainly includes the first metal-oxide-semiconductor and current-limiting resistance RN, this first Metal-oxide-semiconductor uses the enhanced MOSFET of N-channel；
The enhanced MOSFET of N-channel therein grid is connected with the first output pin of pwm chip, connects simultaneously Current-limiting resistance RNFirst end；The enhanced MOSFET of N-channel source electrode is connected with the current foldback circuit of pwm control circuit, together When connect current-limiting resistance RNThe second end；The enhanced MOSFET of N-channel drain electrode and the second primary side of flyback isolating transformer Mouth is connected.
Above-mentioned active clamp circuit structure chart is as shown in fig. 7, it mainly includes clamp capacitor CP1, driving discharge capacity CP2, driving discharge resistance RP, diode DPWith the second metal-oxide-semiconductor；Second metal-oxide-semiconductor uses P-channel enhancement type MOSFET；
P-channel enhancement type MOSFET drain electrode passes through clamp capacitor CP1Connect the second primary side of flyback isolating transformer Mouthful；P-channel enhancement type MOSFET grid is by driving discharge capacity CP2The second output pin of pwm chip is connected, together When connection driving discharge resistance RPFirst end and diode DPAnode, driving discharge resistance RPThe second end and diode DP Negative electrode and the second metal-oxide-semiconductor source grounding.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute The those of ordinary skill in category field with reference to above-described embodiment still can to the present invention embodiment modify or Equivalent substitution, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent substitution Within bright claims.

Claims (9)

1. a kind of driving insulating power supply for crimp type IGBT, it is characterised in that controlled including high potential self-energizing circuit, PWM Circuit and main body circuit processed；The main body circuit includes flyback isolating transformer, on-off circuit and active clamp circuit；It is described Pwm control circuit includes feed forward circuit；
The high potential self-energizing circuit is used to power for pwm control circuit and main body circuit；
The pwm control circuit is used to produce two-way pwm signal according to feed forward circuit, wherein pwm signal access switch electricity all the way Road, another way pwm signal access active clamp circuit；
The flyback isolating transformer is used to be isolated pwm signal and drive signal；
The on-off circuit is amplified for will access pwm signal therein, and is driven according to pwm signal generation therein is accessed Dynamic signal；
The active clamp circuit is used for according to the peak voltage for accessing pwm signal absorption IGBT therein.
2. the driving insulating power supply according to claim 1 for crimp type IGBT, it is characterised in that the PWM controls Circuit also includes current foldback circuit, under-voltage protecting circuit, clock circuit and pwm chip；
The pwm chip includes ramp input pin, command value input pin, chip-select pin, under-voltage locking pin, clock Pin, the first output pin and the second output pin.
3. the driving insulating power supply according to claim 2 for crimp type IGBT, it is characterised in that the feed forward circuit It is connected with ramp input pin and command value input pin, the current foldback circuit is connected with chip-select pin, the under-voltage guarantor Protection circuit is connected with under-voltage locking pin, and the clock circuit is connected with clock pins, the on-off circuit and the first efferent duct Pin is connected, and the active clamp circuit is connected with the second output pin.
4. the driving insulating power supply according to claim 3 for crimp type IGBT, it is characterised in that the flyback isolation Transformer includes magnet ring, high pressure winding and diode DX；
The magnet ring includes the first primary port, the second primary port, the first secondary ports and second subprime port, and described first Primary port and second subprime port are different name end, and second primary port and the first secondary ports are Same Name of Ends.
5. the driving insulating power supply according to claim 4 for crimp type IGBT, it is characterised in that described first is primary Port connects high potential self-energizing circuit, the second primary port connecting valve circuit, the first secondary ports connection two Pole pipe DXPositive pole, the diode DXNegative pole be flyback isolating transformer output voltage positive pole, the second subprime port For the negative pole of flyback isolating transformer output voltage.
6. the driving insulating power supply according to claim 4 for crimp type IGBT, it is characterised in that the high pressure winding Using silicon rubber hookup wire；The silicon rubber hookup wire includes wire and insulating barrier；
The current density of the silicon rubber hookup wire is calculated as follows：
<mrow> <msub> <mi>J</mi> <mi>e</mi> </msub> <mo>=</mo> <mi>J</mi> <mfrac> <msubsup> <mi>r</mi> <mn>1</mn> <mn>2</mn> </msubsup> <msup> <mrow> <mo>(</mo> <msub> <mi>r</mi> <mn>1</mn> </msub> <mo>+</mo> <msub> <mi>r</mi> <mn>2</mn> </msub> <mo>)</mo> </mrow> <mn>2</mn> </msup> </mfrac> </mrow>
Wherein, JeRepresent the current density of silicon rubber hookup wire, r1Represent the radius of wire, r2Represent the thickness of insulating barrier, J tables Show the current density of wire.
7. the driving insulating power supply according to claim 5 for crimp type IGBT, it is characterised in that the on-off circuit Including the first metal-oxide-semiconductor and current-limiting resistance RN；
The grid of first metal-oxide-semiconductor is connected with the first output pin of pwm chip, while connects current-limiting resistance RN One end；The source electrode of first metal-oxide-semiconductor is connected with the current foldback circuit of pwm control circuit, while connects current-limiting resistance RN's Second end；The drain electrode of first metal-oxide-semiconductor is connected with the second primary port of flyback isolating transformer.
8. the driving insulating power supply according to claim 7 for crimp type IGBT, it is characterised in that the active clamp Circuit includes clamp capacitor CP1, driving discharge capacity CP2, driving discharge resistance RP, diode DPWith the second metal-oxide-semiconductor；
The drain electrode of second metal-oxide-semiconductor passes through clamp capacitor CP1Connect the second primary port of flyback isolating transformer；Described The grid of two metal-oxide-semiconductors is by driving discharge capacity CP2The second output pin of pwm chip is connected, while connects driving electric discharge Resistance RPFirst end and diode DPAnode, the driving discharge resistance RPThe second end and diode DPNegative electrode and The source grounding of second metal-oxide-semiconductor.
9. the driving insulating power supply according to claim 8 for crimp type IGBT, it is characterised in that the first MOS It is P-channel enhancement type MOSFET to manage as the enhanced MOSFET of N-channel, second metal-oxide-semiconductor.
CN201710712495.4A 2017-08-18 2017-08-18 A kind of driving insulating power supply for crimp type IGBT Pending CN107493096A (en)

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109547220A (en) * 2018-12-14 2019-03-29 深圳和而泰智能控制股份有限公司 Telecommunication circuit is isolated
CN109889027A (en) * 2019-03-20 2019-06-14 山东德佑电气股份有限公司 IGBT drive circuit for power quality controlling device
CN113991602A (en) * 2021-10-19 2022-01-28 南京航空航天大学 Soft turn-off driving circuit of solid-state direct-current circuit breaker and parameter design method thereof

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN105991006A (en) * 2015-02-06 2016-10-05 国家电网公司 Capacitance pull-push linear isolation high-potential self energy taking circuit with serial connected crimping type IGBT

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
CN105991006A (en) * 2015-02-06 2016-10-05 国家电网公司 Capacitance pull-push linear isolation high-potential self energy taking circuit with serial connected crimping type IGBT

Non-Patent Citations (2)

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NATIONAL SEMICONDUCTOR CORPORATION: "LM5025 Active Clamp Voltage Mode PWM Controller", 《NATIONAL SEMICONDUCTOR DATASHEET》 *
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109547220A (en) * 2018-12-14 2019-03-29 深圳和而泰智能控制股份有限公司 Telecommunication circuit is isolated
CN109547220B (en) * 2018-12-14 2023-11-28 深圳和而泰智能控制股份有限公司 Isolated communication circuit
CN109889027A (en) * 2019-03-20 2019-06-14 山东德佑电气股份有限公司 IGBT drive circuit for power quality controlling device
CN113991602A (en) * 2021-10-19 2022-01-28 南京航空航天大学 Soft turn-off driving circuit of solid-state direct-current circuit breaker and parameter design method thereof

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Application publication date: 20171219