CN202309044U - Insulated gate bipolar translator (IGBT) module driving circuit applicable to high power inverter - Google Patents
Insulated gate bipolar translator (IGBT) module driving circuit applicable to high power inverter Download PDFInfo
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- CN202309044U CN202309044U CN 201120448012 CN201120448012U CN202309044U CN 202309044 U CN202309044 U CN 202309044U CN 201120448012 CN201120448012 CN 201120448012 CN 201120448012 U CN201120448012 U CN 201120448012U CN 202309044 U CN202309044 U CN 202309044U
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Abstract
The utility model relates to an insulated gate bipolar translator (IGBT) module driving circuit applicable to a high power inverter, which comprises a full bridge direct current (DC)/DC driving power supply circuit, a photoelectric coupled isolating circuit, a push-pull power amplifying circuit, an IGBT overcurrent detecting circuit and an undervoltage and failure protecting circuit. The IGBT module driving circuit is characterized by further comprising a transformer feedback overcurrent signal circuit which comprises a transformer output feedback circuit and a transformer input recognition circuit, the transformer output feedback circuit is connected with output of a transformer and the IGBT overcurrent detecting circuit, and the transformer input recognition circuit is connected with input of the transformer and the undervoltage and failure protecting circuit. The IGBT module driving circuit has the advantages of being simple in structure, low in cost, small in volume and high in capacity and reliability.
Description
Technical field
The utility model relates to a kind of IGBT module drive circuit that is applicable to the high power contravariant device, is mainly used in electrical control.
Background technology
Inverter is widely used in industries such as wind energy, solar energy, frequency converter.In recent years, along with developing rapidly of new forms of energy, inverter develops to big capacity, high voltage direction; Inverter switch device is IGBT (insulated gate bipolar transistor) normally, and its drive circuit has transformer isolation and two kinds of isolated form of light-coupled isolation, and the IGBT module capacity is big more; Then require the capacity of drive circuit just big more; IGBT module voltage grade is high more, need the isolation voltage of drive circuit high more, so the design of drive circuit of IGBT module is the key of inverter.The driver of transformer isolation has the 2SC0435T of Switzerland CONCEPT company (1700V electric pressure at present; Every road power 4W, peak anode current 35A), 2ED300C17-ST (the 1700V electric pressure of German INFINEON company; Every road power 4W; Peak anode current 30A), their characteristics power is relatively large, defencive function is complete, is widely used at present in wind energy and the photovoltaic DC-to-AC converter.But the number of devices of this quasi-driver is many, cost an arm and a leg, and volume is bigger, is not suitable for being installed in IGBT surface (the stube cable distance is longer), and reliability reduces.
It is the expanded letter optocoupler that drive circuit adopts the device of light-coupled isolation, for example HCNW2611 or HCNW3120, but this type expanded letter optocoupler that is applied to the 690V system has only the driving optocoupler; Do not feed back optocoupler; This just needs to increase a feedback optocoupler, and cost increases, and volume increases.Simultaneously, the drive current of expanded letter optocoupler is limited, and the peak value maximum has only 2A, can't satisfy the needs of big capacity IGBT module.
The utility model content
The utility model technical problem to be solved is to overcome existing above-mentioned deficiency in the prior art, and a kind of IGBT module drive circuit that is applicable to the high power contravariant device is provided.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: this is applicable to the IGBT module drive circuit of high power contravariant device; Comprise full-bridge DC/DC driving power circuit, optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, under-voltage and fault secure circuit; Full-bridge DC/DC driving power circuit comprises transformer; Optical coupling isolation circuit and push-pull power amplifier circuit, under-voltagely be connected with fault secure circuit; Push-pull power amplifier circuit is connected with IGBT drive circuit, IGBT over-current detection circuit, and the IGBT over-current detection circuit is connected with the IGBT drive circuit, under-voltage and fault secure circuit; It is characterized in that also being provided with transformer feedback over-current signal circuit; Transformer feedback over-current signal circuit comprises transformer output feedback circuit and transformer input identification circuit, and transformer output feedback circuit is connected with output, the IGBT over-current detection circuit of transformer, transformer import identification circuit and transformer input, under-voltagely be connected with fault secure circuit.
The said transformer output of the utility model feedback circuit comprises resistance five, triode five, diode four, resistance 12; Diode four cathode connecting transformer output cathodes, diode four negative poles connect triode five collector electrodes, and triode five emitters connect the transformer output negative pole; The transformer output negative pole connects drivingly; Triode five base stage connecting resistance ends on May Day, resistance five other end connecting resistances, 12 ends and IGBT over-current detection circuit, resistance 12 another terminations are drivingly.
The said transformer input of the utility model identification circuit comprises diode one, electric capacity one, resistance one, Zener diode one; Diode one cathode connecting transformer is imported an end; Diode one negative pole connects an end, an end of resistance one, Zener diode one negative pole of electric capacity one; Zener diode one positive pole connects under-voltage and fault secure circuit, and electric capacity one other end, resistance one other end and resistance two other ends link together and connect digitally.
The said IGBT over-current detection circuit of the utility model comprises high-voltage diode, resistance ten, resistance nine, electric capacity four, Zener diode two, diode five, resistance six, triode seven; The high-voltage diode negative pole connects the IGBT drive circuit; One end of the anodal connecting resistance nine of high-voltage diode; Resistance nine other ends connect an end of Zener diode two negative poles, electric capacity four, an end of resistance ten respectively, resistance ten another termination driving power output cathodes, Zener diode two cathode connecting transformers output feedback circuit, triode seven emitters; Triode seven collector electrodes, electric capacity four another terminations are drivingly; One end of triode seven base stage connecting resistances six, another terminating diode five positive poles of resistance six, diode five negative poles connect the input of push-pull power amplifier circuit.
The utility model said under-voltage and fault secure circuit comprise resistance two, resistance three, triode six, diode seven, resistance 11, triode ten; One end of resistance three, an end of resistance 11 connect the input power supply respectively; Resistance three other ends connect triode ten base stages, triode six collector electrodes respectively; Triode six emitters, triode ten emitters all connect digitally; Triode six base stages are connected with the other end, the transformer input identification circuit of resistance two, and resistance 11 other ends connect triode ten collector electrodes, diode seven negative poles respectively, and diode seven positive poles connect optical coupling isolation circuit.
The beneficial effect of the utility model is simple for structure, and cost is low, and volume is little, and capacity is big, and reliability is high.
Description of drawings
Fig. 1 is the utility model embodiment circuit theory diagrams;
Fig. 2 is the utility model embodiment typical waveform sketch map.
Embodiment
In conjunction with accompanying drawing and embodiment the utility model is carried out further detailed description.
Present embodiment comprises full-bridge DC/DC driving power circuit, optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, transformer feedback over-current signal circuit, under-voltage and fault secure circuit.Transformer feedback over-current signal circuit transmits IGBT over current fault signal through transformer T1; When over current fault occurring; Through turn-on transistor five Q5,, pass the signal along to transformer T1 input with transformer T1 output short-circuit; Voltage is lower than fault set point (Zener diode one Z1 magnitude of voltage) after the transformer T1 rectification, just discerns fault.
As shown in Figure 1; Said full-bridge DC/DC driving power circuit comprises: the full-bridge circuit of driving power input (comprises triode one Q1; Triode two Q2; Triode three Q3; Triode four Q4) and transformer T1; Triode one Q1, triode three Q3 accept control signal
; Triode two Q2, triode four Q4 accept the complementary signal
of control signal
; Make transformer T1 be operated in full-bridge mode; The efficient of transformer T1 is high under this pattern; Can satisfy the driving power demand of big capacity IGBT module, input power supply vdd voltage is 15V normally; The driving power output rectification circuit (comprises diode two D2; Diode three D3; Electric capacity two C2, electric capacity three C3) the output rectification be positive driving power (+15V) (15V) two-way voltage is for optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, transformer feedback over-current signal circuit, IGBT drive circuit provide power supply with negative driving power; The IGBT drive circuit comprises resistance seven, resistance eight and IGBT module V1, and full-bridge DC/DC driving power circuit is a prior art.
Said optical coupling isolation circuit comprises: current-limiting resistance R4 and expanded letter optocoupler U1, pwm control signal is delivered to output from current-limiting resistance R4 input, and expanded letter optocoupler U1 can satisfy the isolation requirement of 1000V busbar voltage, and optical coupling isolation circuit is a prior art.
Said push-pull power amplifier circuit comprises: NPN triode Q8 and PNP triode Q9; Because the output current of optocoupler can not satisfy the drive current demand of IGBT module V1; Needing increases the one-level push-pull amplifier circuit, for example uses FZT851 and FZT951, the drive current peak I
CMReach 15A, if a plurality of triode parallel connection driving power then corresponding increase then can be satisfied the more demand of high-power IGBT module V1, push-pull power amplifier circuit is a prior art.
Said IGBT over-current detection circuit comprises: high-voltage diode D6, resistance ten R10, and overcurrent filter circuit (forming) by resistance nine R9 and electric capacity four C4, Zener diode two Z2 open identification circuit (comprising diode five D5, resistance six R6, triode seven Q7).High-voltage diode D6 negative pole connects IGBT module V1 collector electrode; Anodal connecting resistance nine R9 of high-voltage diode D6 one end; The resistance nine R9 other ends connect Zener diode two Z2 negative poles, electric capacity four C4 one end, resistance ten R10 one end respectively; Another termination driving power output cathode of resistance ten R10, anodal connecting resistance 12 R12 of Zener diode two Z2 one end, another termination of electric capacity four C4 is AGND drivingly.Its working method is in the normal opening process of IGBT, and Vcesat is lower for the IGBT conduction voltage drop, and less than Zener diode two Z2 threshold voltage 10V, so late-class circuit is 0V; In the unusual opening process of IGBT; (Zener diode two Z2 are 10V here if IGBT conduction voltage drop Vcesat surpasses set point; Set point is similar to 10V-Vf, is about 9.3V), then detect IGBT and be in overcurrent or move back saturation condition; Late-class circuit is then exported to controller with fault through feedback circuit greater than 0.7V; In the IGBT turn off process; Opening identification circuit, to detect the PWM drive signal be low, then comes shutdown detecting circuit through opening triode seven Q7, in the IGBT opening process; Open identification circuit and detect the PWM drive signal, then come the open detection circuit through closing triode seven Q7 for high.
Said transformer feedback over-current signal circuit comprises transformer output feedback circuit and transformer input identification circuit; Transformer output feedback circuit comprises resistance five R5, triode five Q5, diode four D4, resistance 12 R12; Diode four D4 cathode connecting transformer T1 output OUT2; Diode four D4 negative poles connect triode five Q5 collector electrodes; Triode five Q5 emitters meet transformer T1 output OUT1, and transformer T1 output OUT1 meets AGND drivingly, triode five Q5 base stage connecting resistances five R5 one end; Resistance five R5 other end connecting resistance 12 R12, one ends and triode seven Q7 emitters, the resistance 12 R12 other ends, triode seven Q7 collector electrodes meet AGND drivingly.When IGBT conduction voltage drop Vcesat was in overcurrent, triode five Q5 conductings were carried out short circuit with transformer TI, caused the instantaneous increase of transformer T1 output current, and over-current signal is fed back to transformer T1 input.Transformer input identification circuit comprises diode one D1, electric capacity one C1, resistance one R1, Zener diode one Z1; Diode one D1 cathode connecting transformer T1 imports an end IN1; Diode one D1 negative pole connects electric capacity one C1 one end, resistance one R1 one end, Zener diode one Z1 negative pole; Anodal connecting resistance two R2 of Zener diode one Z1 one end, the electric capacity one C1 other end, the resistance one R1 other end and the resistance two R2 other ends link together and meet digitally GND.When transformer T1 because output short-circuit, cause input current to increase, so the saturation voltage drop Vce of triode one Q1 increases; Therefore the corresponding reduction of transformer T1 input terminal voltage is just the identification circuit of transformer input at this moment can detect fault, if voltage is less than 12V (Zener diode one Z1 set point); Then identify fault; The characteristics of this circuit also comprise if supply voltage VDD less than set point (12V), identifies fault too, effectively protect IGBT module V1.
Said under-voltage and fault secure circuit comprise resistance two R2, resistance three R3, triode six Q6, diode seven D7, resistance 11 R11, triode ten Q10; Resistance three R3 one end, resistance 11 R11 one termination input power vd D; The resistance three R3 other ends connect triode ten Q10 base stages, triode six Q6 collector electrodes respectively; Triode six Q6 emitters, triode ten Q10 emitters all meet digitally GND; Triode six Q6 base stages are connected with Zener diode one Z1 is anodal, and the resistance 11 R11 other ends connect triode ten Q10 collector electrodes, diode seven D7 negative poles respectively, and diode seven D7 positive poles connect optical coupling isolation circuit.When identifying under-voltage or during over current fault, then turn-offing triode six Q6, open triode ten Q10, the PWM drive signal is dragged down, through optical coupling isolation circuit, turn-off IGBT module V1, this electric circuit characteristic is from resetting output overcurrent fault and testing circuit thereof.
The utility model uses transformer T1 to transmit the over current fault signal, has saved an expanded letter feedback optocoupler, and its isolation voltage satisfies the requirement of 1000V busbar voltage.Circuit structure is simple, and number of devices is few, volume is little, therefore is fit to be installed in the IGBT surface, and the interference problems such as EMC of having avoided wire length to cause further improve the drive circuit reliability.The DC/DC power circuit adopts full-bridge circuit structure and output to adopt the triode power amplification circuit, makes the driver module current capacity satisfy high-power IGBT module demand greatly.
The typical waveform sketch map of present embodiment is as shown in Figure 2:
High power contravariant device switching frequency is generally between 2kHz ~ 10kHz; The frequency of this instance hypothesis-driver is 10kHz; Full-bridge DC/DC driving power circuit switching frequency is set at 180kHz, and driver input voltage VDD is assumed to be 15V, output after the rectification be+15V and-15V two-way voltage.Waveform shown among Fig. 21 is optical coupling isolation circuit input (PWM) oscillogram; Waveform shown in 2 is triode ten Q10 collector electrode (FAULT) oscillograms; Waveform shown in 3 is an IGBT module V1 input (G end among Fig. 1; Be IGBT module drive DRV) oscillogram, waveform shown in 4 is Zener diode two Z2 negative pole oscillograms, waveform shown in 5 is the anodal oscillograms of Zener diode two Z2; Waveform shown in 6 is imported an end IN1 oscillogram for transformer T1, and waveform shown in 7 is Zener diode one a Z1 negative pole oscillogram.
At t1 ~ t2 constantly, be normal condition, the PWM state is ON, does not have IGBT conduction voltage drop Vcesat over current fault:
The optical coupling isolation circuit input terminal voltage is 15V in the waveform, and U1 passes to output with drive signal through the expanded letter optocoupler;
Triode ten Q10 collector voltages are 15V in the waveform, do not have IGBT conduction voltage drop Vcesat over current fault;
IGBT module V1 input voltage is 15V in the waveform, and IGBT module V1 is in the normally state;
Zener diode two Z2 cathode voltages are 2V in the waveform, and IGBT module V1 is normally open-minded, and IGBT conduction voltage drop Vcesat voltage is normally opened to about 2V, so Zener diode two Z2 cathode voltage clampers are about 2V;
Zener diode two Z2 cathode voltages are 0V in the waveform; Because Zener diode two Z2 cathode voltages are 2V, be lower than zener diode voltage 10V, so Zener diode two Z2 positive poles are pulled down to 0V by resistance 12 R12; Triode seven Q7 turn-off, and open the IGBT over-current detection circuit;
To import an end IN1 maximum peak voltage be about supply voltage 15V to transformer T1 in the waveform;
Behind the rectifying and wave-filtering of Zener diode one Z1 negative pole through diode one D1, electric capacity one C1, resistance one R1, its magnitude of voltage is greater than the threshold voltage 12V of Zener diode Z1, fault-free in the waveform.
At t2 ~ t3 constantly, be normal condition, the PWM state is OFF:
The optical coupling isolation circuit input terminal voltage is 0V in the waveform, and U1 passes to output with drive signal through the expanded letter optocoupler;
Triode ten Q10 collector voltages are 15V in the waveform, do not have IGBT conduction voltage drop Vcesat over current fault;
IGBT module V1 input voltage is-15V that IGBT module V1 is in off state in the waveform;
Zener diode two Z2 cathode voltages are 10V in the waveform; IGBT conduction voltage drop Vcesat voltage equals voltage between IGBT module V1C-E (collector electrode-emitter); High-voltage diode D6 turn-offs, and seven Q7 are open-minded for triode, Zener diode two Z2 cathode voltages by Zener diode Z2 clamper at 10V;
Zener diode two Z2 cathode voltages are 0V in the waveform, and seven Q7 are open-minded for triode, and Zener diode two Z2 positive poles are pulled down to 0V, close the IGBT over-current detection circuit;
To import an end IN1 maximum peak voltage be about supply voltage 15V to transformer T1 in the waveform;
Zener diode one Z1 negative pole is through behind the rectifying and wave-filtering in the waveform, and its voltage is greater than the threshold voltage 12V of Zener diode Z1, fault-free.
T3 becomes ON constantly for PWM by OFF constantly, and output detects fault, constantly from the over current fault of the output that resets, at t3 ~ t4 constantly, is the time of delay of detecting over current fault at t4, and generally in 10us, and the PWM state is ON:
The optical coupling isolation circuit input terminal voltage is 15V in the waveform, and the PWM state is ON, and U1 passes to output with drive signal through the expanded letter optocoupler;
Triode ten Q10 collector voltages are 15V at t3 ~ t4 in the waveform, detect IGBT conduction voltage drop Vcesat over current fault constantly at t4, so triode ten Q10 conductings, and triode ten Q10 collector electrodes are pulled down to 0V;
IGBT module V1 input voltage is 15V in the waveform; IGBT conduction voltage drop Vcesat is in over-current state, and general IGBT conduction voltage drop Vcesat over current fault need postpone several uS times, if postpone too short; Disturbed easily, IGBT module V1 allows failure time of short circuit less than 10uS;
Zener diode two Z2 cathode voltages are exported constantly at t3 ~ t4 and are detected the Vcesat over current fault in the waveform; Be 12V, the PWM state is ON, and triode seven Q7 turn-off; Open the IGBT over-current detection circuit; At t4 is 0V owing to triode ten Q10 collector voltages later on constantly, the output failure detector circuit that resets certainly, so Zener diode two Z2 cathode voltages are 10V;
Zener diode two Z2 positive poles are 2V at t3 ~ t4 moment voltage in the waveform, because Zener diode two Z2 cathode voltages are 12V, are higher than zener diode voltage 10V, are 0V constantly at t4;
Transformer T1 imports an end IN1 maximum peak voltage for being pulled low to 11V in the waveform, because transformer T1 output short-circuit is imported triode one Q1, triode four Q4 conduction voltage drops increase, and make the corresponding reduction of transformer T1 voltage;
Zener diode one Z1 negative pole after t3 ~ t4 filtering during this period of time, constantly detects IGBT conduction voltage drop Vcesat over current fault at t4 through behind the rectifying and wave-filtering in the waveform.
At t4 ~ t5 constantly, be the time of latch fault, generally require controller during this period of time to identify fault, seal pwm pulse constantly at t5, transformer T1 input fault self-cleaning:
The optical coupling isolation circuit input terminal voltage is 15V in the waveform, and the PWM state becomes OFF by ON, and controller was discerned fault before t5;
Triode ten Q10 collector voltages are 0V in the waveform; Detect IGBT conduction voltage drop Vcesat fault constantly at t4; Therefore triode ten Q10 conductings, triode ten Q10 collector electrodes are pulled down to 0V, detect the Vcesat over current fault; At t5 moment input fault self-cleaning, triode ten Q10 collector voltages rise to 15V;
IGBT module V1 input voltage is-15V in the waveform, and triode ten Q10 collector voltages are 0V, and seven D7 drag down the PWM drive signal through diode, through light-coupled isolation, closes IGBT module V1;
Zener diode two Z2 cathode voltages are 10V in the waveform, and seven Q7 are open-minded for diode, close the IGBT over-current detection circuit;
Zener diode two Z2 cathode voltages are 0V in the waveform, and seven Q7 are open-minded for diode, close the IGBT over-current detection circuit, and Zener diode two Z2 positive poles are pulled down to 0V;
To import an end IN1 maximum peak voltage be about 15V to transformer T1 in the waveform;
Zener diode one Z1 negative pole rises to more than the 12V at t4 ~ t5 through behind the rectifying and wave-filtering constantly in the waveform, and t5 is constantly from resetting input fault.
After t5 ~ moment, the voltage waveform of the same t2 ~ t3 of 1 ~ 7 voltage waveform in the waveform.
Typical waveform schematic view illustrating through Fig. 2 embodiment this drive circuit characteristics be to transmit the IGBT over-current signal through transformer T1, sort circuit is saved a feedback optocoupler, circuit structure is simple, number of devices is few, volume is little.
Simple deformation of every the utility model or equivalent transformation should be thought the protection range that falls into the utility model.
Claims (5)
1. IGBT module drive circuit that is applicable to the high power contravariant device; Comprise full-bridge DC/DC driving power circuit, optical coupling isolation circuit, push-pull power amplifier circuit, IGBT over-current detection circuit, under-voltage and fault secure circuit; Full-bridge DC/DC driving power circuit comprises transformer; Optical coupling isolation circuit and push-pull power amplifier circuit, under-voltagely be connected with fault secure circuit; Push-pull power amplifier circuit is connected with IGBT drive circuit, IGBT over-current detection circuit; The IGBT over-current detection circuit is connected with the IGBT drive circuit, it is characterized in that: also be provided with transformer feedback over-current signal circuit, transformer feedback over-current signal circuit comprises transformer output feedback circuit and transformer input identification circuit; Transformer output feedback circuit is connected with output, the IGBT over-current detection circuit of transformer, transformer import identification circuit and transformer input, under-voltagely be connected with fault secure circuit.
2. IGBT module drive circuit according to claim 1; It is characterized in that: said transformer output feedback circuit comprises resistance five, triode five, diode four, resistance 12; Diode four cathode connecting transformer output cathodes, diode four negative poles connect triode five collector electrodes, and triode five emitters connect the transformer output negative pole; The transformer output negative pole connects drivingly; Triode five base stage connecting resistance ends on May Day, resistance five other end connecting resistances, 12 ends and IGBT over-current detection circuit, resistance 12 another terminations are drivingly.
3. IGBT module drive circuit according to claim 1 and 2; It is characterized in that: said transformer input identification circuit comprises diode one, electric capacity one, resistance one, Zener diode one; Diode one cathode connecting transformer is imported an end; Diode one negative pole connects an end, an end of resistance one, Zener diode one negative pole of electric capacity one; Zener diode one positive pole connects under-voltage and fault secure circuit, and electric capacity one other end, resistance one other end and resistance two other ends link together and connect digitally.
4. IGBT module drive circuit according to claim 1 and 2; It is characterized in that: said IGBT over-current detection circuit comprises high-voltage diode, resistance ten, resistance nine, electric capacity four, Zener diode two, diode five, resistance six, triode seven; The high-voltage diode negative pole connects the IGBT drive circuit, an end of the anodal connecting resistance nine of high-voltage diode, and resistance nine other ends connect an end of Zener diode two negative poles, electric capacity four, an end of resistance ten respectively; Resistance ten another termination driving power output cathodes; Zener diode two cathode connecting transformers output feedback circuit, triode seven emitters, triode seven collector electrodes, electric capacity four another terminations drivingly, an end of triode seven base stage connecting resistances six; Another terminating diode five positive poles of resistance six, diode five negative poles connect the input of push-pull power amplifier circuit.
5. IGBT module drive circuit according to claim 1 and 2; It is characterized in that: said under-voltage and fault secure circuit comprise resistance two, resistance three, triode six, diode seven, resistance 11, triode ten; One end of resistance three, an end of resistance 11 connect the input power supply respectively; Resistance three other ends connect triode ten base stages, triode six collector electrodes respectively, and triode six emitters, triode ten emitters all connect digitally, and triode six base stages are connected with the other end, the transformer input identification circuit of resistance two; Resistance 11 other ends connect triode ten collector electrodes, diode seven negative poles respectively, and diode seven positive poles connect optical coupling isolation circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120448012 CN202309044U (en) | 2011-11-14 | 2011-11-14 | Insulated gate bipolar translator (IGBT) module driving circuit applicable to high power inverter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120448012 CN202309044U (en) | 2011-11-14 | 2011-11-14 | Insulated gate bipolar translator (IGBT) module driving circuit applicable to high power inverter |
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| CN202309044U true CN202309044U (en) | 2012-07-04 |
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|---|---|---|---|
| CN 201120448012 Expired - Fee Related CN202309044U (en) | 2011-11-14 | 2011-11-14 | Insulated gate bipolar translator (IGBT) module driving circuit applicable to high power inverter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412710A (en) * | 2011-11-14 | 2012-04-11 | 浙江海得新能源有限公司 | IGBT (Insulated Gate Bipolar Transistor) module driving circuit suitable for high-power inverter |
| CN104749425A (en) * | 2015-04-02 | 2015-07-01 | 佛山市柏克新能科技股份有限公司 | Rapid overcurrent detection circuit |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN110445100A (en) * | 2019-07-22 | 2019-11-12 | 江苏云意电气股份有限公司 | A kind of IGBT moves back saturation protection and driving power under-voltage protecting circuit |
-
2011
- 2011-11-14 CN CN 201120448012 patent/CN202309044U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412710A (en) * | 2011-11-14 | 2012-04-11 | 浙江海得新能源有限公司 | IGBT (Insulated Gate Bipolar Transistor) module driving circuit suitable for high-power inverter |
| CN102412710B (en) * | 2011-11-14 | 2014-03-26 | 浙江海得新能源有限公司 | IGBT (Insulated Gate Bipolar Transistor) module driving circuit suitable for high-power inverter |
| CN104749425A (en) * | 2015-04-02 | 2015-07-01 | 佛山市柏克新能科技股份有限公司 | Rapid overcurrent detection circuit |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN105790554B (en) * | 2016-04-06 | 2018-02-06 | 杭州电子科技大学 | A kind of IGBT drive circuit and control method with dual resisteance |
| CN110445100A (en) * | 2019-07-22 | 2019-11-12 | 江苏云意电气股份有限公司 | A kind of IGBT moves back saturation protection and driving power under-voltage protecting circuit |
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