CN101944715A - Load short-circuit protection circuit - Google Patents

Load short-circuit protection circuit Download PDF

Info

Publication number
CN101944715A
CN101944715A CN 201010268117 CN201010268117A CN101944715A CN 101944715 A CN101944715 A CN 101944715A CN 201010268117 CN201010268117 CN 201010268117 CN 201010268117 A CN201010268117 A CN 201010268117A CN 101944715 A CN101944715 A CN 101944715A
Authority
CN
China
Prior art keywords
circuit
connected
short
load
transistor
Prior art date
Application number
CN 201010268117
Other languages
Chinese (zh)
Other versions
CN101944715B (en
Inventor
林良有
黎志
Original Assignee
深圳拓邦股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳拓邦股份有限公司 filed Critical 深圳拓邦股份有限公司
Priority to CN 201010268117 priority Critical patent/CN101944715B/en
Publication of CN101944715A publication Critical patent/CN101944715A/en
Application granted granted Critical
Publication of CN101944715B publication Critical patent/CN101944715B/en

Links

Abstract

The invention relates to a load short-circuit protection circuit connected between a storage battery and a load circuit. The load short-circuit protection circuit comprises an MOS (Metal Oxide Semiconductor) tube protection circuit, a short-circuit detection circuit, a singlechip and an MOS tube switching circuit, wherein the MOS tube protection circuit is used for the reverse connection protection of the storage battery; the short-circuit detection circuit is used for detecting the short-circuit of the load circuit; the singlechip is used for sending out a switching signal according to a detection result of the short-circuit detection result; the MOS tube switching circuit is used for switching on or off the load circuit according to the switching signal; the short-circuit detection circuit comprises a comparer and a reference voltage generation circuit; the reference voltage generation circuit is connected to a first input end of the comparer; a source electrode of a first MOS tube of the MOS tube protection circuit is connected to a second input end of the comparer; and the output end of the comparer is connected to a first input end of the singlechip. The load short-circuit protection circuit is used for a load short-circuit protection circuit of a solar controller, has low cost, cannot increase the impedance of a load loop and has the function of eliminating instantaneoushigh voltage.

Description

负载短路保护电路 Load short circuit protection

技术领域 FIELD

[0001] 本发明涉及保护电路,更具体地说,涉及一种用于太阳能控制器的负载短路保护电路。 [0001] The present invention relates to a protection circuit, and more particularly, to a load short circuit protection for the solar controller.

背景技术 Background technique

[0002] 太阳能分布于世界各地,是最清洁的能源之一,为此太阳能发电一直都是能源研究的一个热点。 [0002] Solar located around the world, is one of the cleanest energy, solar energy for this purpose has always been a hot topic of research. 最近几年以美国等国家为首倡导的低碳、绿色环保运动,太阳能发电比以往发展更为迅速了。 In recent years the United States and other countries, led by advocating low-carbon, green environmental movement, the development of solar power more rapidly than ever.

[0003] 太阳能发电由四部分组成:太阳能电池板、蓄电池和充放电控制器及负载。 [0003] Solar power consists of four parts: a solar cell panel, and a battery charge controller and the load. 而充放电控制器的功能有:(1)将太阳能电池板的电量按照蓄电池的充电方式充到蓄电池中;(2) 管理蓄电池的电量;(3)保护太阳能发电系统。 And the charging and discharging functions of the controller are: (1) the power of the solar panel to charge the battery according to the battery charging; (2) control of the battery power; (3) to protect the solar power generation system.

[0004] 市面上的太阳能充放电控制器具有如有如下的特点:种类多样,中小功率的应用居多,尤其应用在路灯系统上面。 Solar [0004] market if charge and discharge controller having the following characteristics: a wide variety, mostly small and medium power applications, particular application in the above system lights. 对于大功率的系统,其中一个技术的难点就是实现负载的短路保护功能。 For high-power system, which is a technical and difficult to achieve short-circuit protection of the load.

[0005] 由于大功率系统的瞬间短路电路较大,一些市面上的控制器无短路保护的功能。 [0005] short circuit due to a momentary power larger systems, a number of market controller without short-circuit protection. 对于具备短路保护功能的大功率太阳能控制器,其方案可以归纳为三种: For solar power controller includes a short-circuit protection functions, which can be summarized into three programs:

[0006] (1)方案一:最原始的短路保护方式就是在蓄电池的正端或者负端串联一个保险管,通过保险管的熔断来起到短路保护的作用; [0006] (1) a program: the most primitive way to short-circuit protection positive terminal or negative terminal of a fuse in series to the short-circuit protection functions through the action of the fuse tube battery;

[0007] 方案一结构简单且易于实现,但缺点明显:保险管要求是大功率快熔的,成本较高,同时要求回路上的MOS管抗大电流冲击能力较高,增加了MOS管器件的选型难度和成本。 [0007] a simple structure and is easy to implement embodiment, but obvious disadvantages: high power fuse requirements of fast-acting, high cost, while required loop current of the MOS transistor anti-big shocks, the MOS transistor device increases Selection of the difficulty and cost.

[0008] (2)方案二:在功率回路上串联一个1_5πιΩ的检流电阻,然后通过运放比较器电路产生一个短路中断的脉冲电平给单片机,再由单片机来断开回路的MOS管来实现短路保护;如图1所示。 [0008] (2) Scheme II: In the power loop a series sense resistor 1_5πιΩ, and then generate a pulse level by a short circuit interruption to the microcontroller of the operational amplifier comparator circuit, then by the microcontroller to turn off MOS circuit tubes short-circuit protection; as shown in FIG.

[0009] 方案二用到了检流电阻,使得负载回路的阻抗增加,降低了回路的供电效率。 [0009] The second scheme uses a current-sense resistor, such that the impedance of the load circuit increases, reducing the efficiency of the power supply circuit. 同时,大功率的检流电阻成本较高。 Meanwhile, the higher cost of high-power sense resistor.

[0010] (3)方案三:不要检流电阻,利用MOS管通过大电流后,在内部阻抗的作用下D端的电压会抬高,再通过一个比较巧妙的三极管电路,产生关断MOS管的电压,结合单片机的控制来实现过流保护和短路保护。 [0010] (3) Scheme III: Do not check the flow resistance, the use of the MOS transistor by a large current, under the effect of internal impedance of the voltage D terminal will raise, and through a more subtle transistor circuit that generates a turn-off MOS transistor voltage, in conjunction with control of the microcontroller to overcurrent protection and short circuit protection. 如图2所示。 as shown in picture 2.

[0011] 与方案三类似的结构在一些国外的产品(如德国Steca的塔龙系列太阳能控制器)中有应用。 Three similar structure [0011] and programs have application in a number of foreign products (such as Germany Steca tower dragon series solar controller) in. 图3为德国Steca的塔龙系列30A太阳能控制器的短路保护及控制部分的电路图。 FIG 3 is a circuit diagram showing a short-circuit protection and the control portion of the column Germany Steca long series of solar controller 30A. 当正常导通时,单片机引脚MCU控制输出低电平,Q4截止使得Q2正常导通从而使负载回路导通,Q2导通后,只要负载端不短路且无过大的电流,Q2的漏极电压< 0. 5V使得Q4继续保持截止,从而维持Q2的导通状态;当出现短路大电流后,Q2的漏极电压接近于蓄电池的电压(10V-30V),在Q4的基极和发射极的作用下,Q4端的电压为0. 7V,Q4导通导致Q2截止,从而达到了短路保护的目的。 When the normally-on, the microcontroller MCU to control the output pin low, Q4 is turned off so that the normal Q2 so that the load circuit is turned on, Q2 is turned back, as long as the load is not short-circuited end without excessive current drain of Q2 voltage <0. 5V such Q4 remain off, thereby maintaining the conduction state and Q2; when large short circuit currents, the drain voltage of Q2 is close to the battery voltage (10V-30V), the base and the emitter of Q4 in under the action of the pole, the voltage of terminal Q4 0. 7V, Q4 is turned off results in Q2, so as to achieve the purpose of short-circuit protection. 短路保护后需要自动恢复:单片机引脚MCU控制 After the short circuit protection requires automatic recovery: microcontroller pin MCU control

4除了具备I/O功能外,还具有AD采样功能,单片机每隔几十毫秒采样一次该引脚(采样时引脚是悬空输入状态,采样过后恢复为输出引脚;作为AD采样功能时,MCU控制及Rl可以认为是悬空的,因此正常情况下Q4还是截止而Q2导通的),当单片机检测到有短路保护时(MCU控制端的电压> 0. 6V),MCU控制引脚设置为输入悬空状态,那么如果短路继续存在的话,R6两端是短接的,Q4继续导通使得Q2截止;MCU控制每隔10秒钟输出一个低电平,如果短路保护仍然存在,则Q4继续导通使得Q2不导通;如果短路保护去除了,那么Q4就会截止使得Q2正常导通。 4 In addition to I / O functions, but also an AD sampling function, several tens of milliseconds sampled once the pin (input sampling is left unconnected state, after the restoration of the sampling interval the microcontroller output pins; AD as a sampling function, MCU control and Rl can be considered vacant, and therefore under normal circumstances or Q4 is turned off and Q2 is oN), when the microcontroller detects that a short-circuit protection (MCU control terminal voltage> 0. 6V), MCU control pins as inputs floating state, if the short circuit continues to exist, R6 is short-circuited at both ends, so that Q2 Q4 is turned off to continue; controlling the MCU outputs a low level every 10 seconds, if the short circuit protection persists, then Q4 is turned on to continue such Q2 nonconductive; if short circuit protection is removed, then Q4 is turned off so that Q2 will be turned on correctly.

[0012] 方案三比较好,但通过对德国Steca的塔龙系列30A太阳能控制器的短路测试发现,短路关断速度太快但没有相应的措施,造成蓄电池接线端子处出现了瞬间的高压(根据接线的粗细和长度不同,瞬间高压也不一样,最高可达到70V甚至更高),而MOS管的耐压器件为55V,该瞬间的高压如果超过MOS管的耐压极限,则存在击穿MOS管而损坏器件的可能。 [0012] Option Three is better, but the short-circuit test by the German Steca series of Taron 30A solar controller found a short-circuit turn-off too fast but there is no corresponding measures, resulting in the emergence of battery terminals of the high-pressure moment (according to wiring of different thickness and length, high-voltage transient is not the same, up to 70V or higher), the device withstand voltage MOS transistor of 55V, the instant high pressure exceeds the pressure limit MOS tube, there is a breakdown of MOS tube may damage the device.

发明内容 SUMMARY

[0013] 本发明要解决的技术问题在于,针对现有技术的用于太阳能控制器的负载短路保护电路成本高、降低回路的供电效率以及易出现瞬间高压损坏器件的缺陷,提供一种成本低、不会增加负载回路的阻抗以及具有消除瞬间高压的用于太阳能控制器的负载短路保护电路。 [0013] The present invention is to solve the technical problem, the short circuit protector for high-cost solar controller, reducing the efficiency of the power supply circuit and the high-voltage transient damage to the device prone to defects of the prior art, to provide a low cost , without increasing the impedance of the load circuit and a short circuit protector for high-voltage transient elimination solar controller.

[0014] 本发明解决其技术问题所采用的技术方案是:构造一种负载短路保护电路,连接在蓄电池和负载电路之间,其中包括: [0014] aspect of the present invention to solve the technical problem are: to construct a circuit protection circuit connected between the battery and the load circuit, which comprises:

[0015] 用于蓄电池反接保护的MOS管保护电路; [0015] a reverse battery protection circuit protection MOS transistor;

[0016] 用于检测负载电路短路的短路检测电路; [0016] The short circuit detecting circuit for detecting a short circuit of a load;

[0017] 根据所述短路检测电路的检测结果发出开关信号的单片机;以及 [0017] Microcontroller switching signal issued from the detection result of said short circuit detecting circuit; and

[0018] 根据所述开关信号使所述负载电路导通或断开的MOS管开关电路。 [0018] MOS switch tube circuit said load circuit turned on or off according to the switching signal causes.

[0019] 在本发明所述的负载短路保护电路中,所述短路检测电路包括比较器以及参考电压产生电路,所述参考电压产生电路连接到所述比较器的第一输入端,所述MOS管保护电路的第一MOS管的源极连接到所述比较器的第二输入端,所述比较器的输出端连接到所述单片机的第一输入端。 [0019] In the short circuit protector according to the present invention, the short circuit detecting circuit includes a comparator and a reference voltage generating circuit, the reference voltage generating circuit is connected to a first input terminal of said comparator, said MOS source of the first MOS transistor circuit protection tube is connected to the second input of the comparator, the comparator output is connected to a first input of the microcontroller.

[0020] 在本发明所述的负载短路保护电路中,所述第一MOS管的源极经所述MOS管开关电路的第二MOS管连接到所述负载电路,所述第一MOS管的栅极连接到所述蓄电池的正极, 所述第一MOS管的漏极连接到所述蓄电池的负极。 [0020] In the short circuit protector according to the present invention, the source electrode of the first MOS transistor through said second MOS transistor circuit MOS switch tube connected to the load circuit, said first MOS transistor a gate connected to the positive electrode of the battery, a drain of the first MOS transistor is connected to the negative electrode of the battery.

[0021] 在本发明所述的负载短路保护电路中,所述短路检测电路还包括所述比较器保护电路,所述比较器保护电路包括第二稳压管以及第二滤波电容,所述第二稳压管的阳极接地,阴极连接到所述比较器的第二输入端;所述第二滤波电容连接在所述第二稳压管的两端。 [0021] In the short circuit protector according to the present invention, the short circuit detecting circuit further comprises a comparator of the protection circuit, said protection circuit comprises a second comparator and a second zener diode filter capacitor, said first the anode is grounded, the cathode of the zener diode is connected to the input of a second comparator; and the second filter capacitor connected across said second regulator tube.

[0022] 在本发明所述的负载短路保护电路中,所述MOS管开关电路还包括使所述第二MOS管导通或截止的导通关闭电路;所述第二MOS管的源极连接到所述第一MOS管的源极, 所述第二MOS管的漏极连接到所述负载电路,所述第二MOS管的栅极连接到所述导通关闭电路。 [0022] In the short circuit protector according to the present invention, the switching circuit further comprises a MOS transistor of said second MOS transistor is turned off or the circuit is turned off; source of the second MOS transistor is connected to the source electrode of the first MOS transistor, a drain of the second MOS transistor is connected to the load circuit, the gate of the second MOS transistor is connected to the conduction circuit closed.

5[0023] 在本发明所述的负载短路保护电路中,所述导通关闭电路为采用驱动IC的驱动电路。 5 [0023] In the short circuit protector according to the present invention, employing a conductive closed circuit driver IC driving circuit.

[0024] 在本发明所述的负载短路保护电路中,所述导通关闭电路包括第一三极管、第二三极管、第一二极管以及第三三极管,所述第一三极管的发射极连接到所述单片机的输出端,所述第一三极管的基极连接到标准电源,所述第一三极管的集电极连接到所述第二三极管的基极,所述第二三极管的发射极连接到驱动电源,所述第二三极管的集电极连接到所述第一二极管的阳极,所述第一二极管的阴极连接到所述第二MOS管的栅极;所述第三三极管的发射极连接到所述第二MOS管的栅极,所述第三三极管的基极连接到所述第一二极管的阳极,所述第三三极管的集电极连接到所述第一MOS管的源极。 [0024] In the short circuit protector according to the present invention, the closed circuit comprises a first conduction transistor, a second transistor, a third transistor and a first diode, said first the emitter of the transistor is connected to an output of the microcontroller, the first base of the transistor is connected to a standard power source, the collector of the first transistor is connected to the second transistor a base, an emitter of said second transistor connected to a driving power source, the collector of the second transistor is connected to the anode of the first diode, the first diode cathode is connected to the gate of the second MOS transistor; a third transistor emitter connected to the gate of the second MOS transistor, said third transistor base connected to the first two the anode of the diode, the collector of the third transistor connected to the source electrode of the first MOS transistor.

[0025] 在本发明所述的负载短路保护电路中,所述负载短路保护电路还包括当所述MOS 管开关电路断开所述负载电路时,用于接通所述负载电路的自恢复检测电路,所述自恢复检测电路包括第三分压电阻以及第四分压电阻,所述第三分压电阻与所述第四分压电阻的连接节点连接到所述蓄电池的负极,所述第三分压电阻的另一端连接到所述蓄电池的正极,所述第四分压电阻的另一端接地,所述第三分压电阻与所述第四分压电阻的连接节点连接到所述单片机的第二输入端。 [0025] In the short circuit protector according to the present invention, the short circuit protection circuit further comprises a load when the switching circuit turns off the MOS transistor load circuit, said load circuit for switching the self-restoration detection circuit, said detection circuit comprises a resettable third voltage dividing resistor and a fourth voltage dividing resistor, said third voltage dividing resistor and the fourth resistor partial connection node connected to the cathode of the battery, the first the other end of the third resistor is connected to the positive electrode of the battery, the other end of the fourth voltage dividing resistors, the third voltage dividing resistor and the fourth resistor partial connection node is connected to the microcontroller a second input terminal.

[0026] 在本发明所述的负载短路保护电路中,所述负载短路保护电路还包括瞬态高压抑制电路,所述瞬态高压抑制电路包括输入瞬态高压抑制电路和输出瞬态高压抑制电路,所述输入瞬态高压抑制电路包括输入稳压电容,所述输出瞬态高压抑制电路包括第二二极管以及输出稳压电容,所述输入稳压电容连接在所述蓄电池的正极和负极之间,所述第二二极管的阴极连接到所述负载电路的阳极,所述第二二极管的阳极连接到所述负载电路的阴极,所述输出稳压电容与所述负载电路并联。 [0026] In the short circuit protector according to the present invention, the load short-circuit protection circuit further includes a transient suppression circuit high voltage, the high voltage transient suppression circuit includes a high voltage transient suppression circuit input and an output high voltage transient suppression circuit the input transient suppression circuit includes a high voltage regulator input capacitance, the output high voltage transient suppression circuit includes a second voltage regulator diode and an output capacitor, said input capacitor is connected in a positive regulator of the battery and the negative electrode between the cathode of the second diode is connected to the anode of the load circuit, the anode of the second diode cathode is connected to the load circuit, the output capacitor and the load circuit voltage regulator in parallel.

[0027] 在本发明所述的负载短路保护电路中,所述输入瞬态高压抑制电路还包括连接在所述蓄电池的正极和负极之间的TVS管、压敏电阻或热敏电阻。 [0027] In the short circuit protector according to the present invention, the input transient suppression circuit further includes a high voltage is connected between the positive and negative electrodes of the battery of the TVS diode, a varistor or a thermistor.

[0028] 实施本发明的负载短路保护电路,具有以下有益效果:通过双MOS管组成的MOS管保护电路和MOS管开关电路以及短路检测电路使得本发明的负载短路保护电路成本低,短路检测电路检测MOS管保护电路的导通阻抗,不会增加负载回路的阻抗。 [0028] The circuit protection circuit according to the present invention has the following advantages: the MOS transistor protection circuit and a MOS transistor switch circuit and the short circuit detecting circuit by the double MOS tube composed of such a low-load short protection circuit the cost of the present invention, the short circuit detecting circuit detecting MOS transistor on-resistance of the protective circuit, without increasing the impedance of the load circuit.

[0029] 短路检测电路的结构做到快速响应的同时,也简化了负载功率回路的结构。 Structure [0029] The short-circuit detection circuit be fast response, but also simplifies the structure of the power load circuit. MOS管保护电路的结构防止蓄电池反接时对负载电路及负载短路保护电路的破坏。 MOS transistor structure protection circuit prevents damage to the load circuit and the short circuit protector when reverse battery. 比较器保护电路的设置保护了短路检测电路中的比较器不会由于大电流而被烧毁。 Comparator protection circuit protection circuit short-circuit detection comparator does not burned because of the large current. MOS管开关电路的设置使得第二MOS管通过导通关闭电路对单片机的信号做出快速响应。 MOS transistor switching circuit is provided such that the second MOS transistor is turned off by the circuit to respond quickly to signal the microcontroller. 采用驱动IC驱动第二MOS管给了用户更多的选择余地。 Using a second driving MOS transistor driver IC gives the user more choice. 采用分离器件构造的导通关闭电路成本低,开关速度可调。 Low cost circuit is turned off using the separating device configuration, the switching speed is adjustable. 自恢复检测电路使得负载电路短路后可以自动恢复,减小了短路故障的次数,更加接近实际的应用要求。 Recovery from such a load detecting circuit can be automatically restored after the short circuit, reducing the number of short-circuit failure, closer to the actual application requirements. 瞬态高压抑制电路消除了短路保护关断时出现的高压毛刺。 High voltage transient suppression circuit to eliminate the high-voltage spikes occurring when the short circuit protection off. 在蓄电池的正极和负极之间连接TVS管、压敏电阻或热敏电阻可以更好的消除短路保护关断时出现的高压毛刺。 Between the positive and negative electrodes of the battery with a TVS diode, a varistor or thermistor may be better to eliminate the high-voltage spikes occurring when the short circuit protection off.

附图说明 BRIEF DESCRIPTION

[0030] 下面将结合附图及实施例对本发明作进一步说明,附图中: [0030] The accompanying drawings and the following embodiments of the present invention is further illustrated drawings in which:

[0031] 图1是现有技术中通过在功率回路上串联检流电阻的负载短路保护电路的结构示意图; [0031] FIG. 1 is a schematic structural diagram of a power series loop circuit protection circuit of the sense resistor by the prior art;

[0032] 图2是现有技术中通过MOS管和短路探测的组合实现自动短路保护的负载短路保护电路的结构示意图; [0032] FIG. 2 is a schematic structural diagram of a short-circuit protection circuit automatically load short-circuit protection of the prior art by a combination of short-circuiting MOS transistor and detection;

[0033] 图3是现有技术中通过MOS管和短路探测的组合实现自动短路保护的负载短路保护电路的电路结构图; [0033] FIG. 3 is a circuit configuration diagram of a load short-circuit protection automatic short circuit protection by a combination of the prior art MOS transistor and the short circuit detection;

[0034] 图4是本发明的负载短路保护电路的电路结构图; [0034] FIG. 4 is a circuit configuration diagram of the short circuit protector of the present invention;

[0035] 图5是本发明的负载短路保护电路的单片机的判断流程图。 [0035] FIG. 5 is a flowchart showing determination microcontroller circuit protection circuit of the present invention.

具体实施方式 Detailed ways

[0036] 为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。 [0036] To make the objectives, technical solutions and advantages of the present invention will become more apparent hereinafter in conjunction with the accompanying drawings and embodiments of the present invention will be further described in detail. 应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。 It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention.

[0037] 如图4所示,在本发明的负载短路保护电路的电路结构图中,所述负载短路保护电路连接在蓄电池BTl和负载电路之间,所述负载短路保护电路包括MOS管保护电路1、短路检测电路2、单片机以及MOS管开关电路3,M0S管保护电路1用于蓄电池反接保护,短路检测电路2用于检测负载电路短路,单片机用于根据短路检测电路2的检测结果发出开关信号,MOS管开关电路3用于根据所述开关信号使所述负载电路导通或断开。 [0037] As shown, in the circuit configuration diagram of a load short-circuit protection of the present invention, the load short-circuit protection circuit is connected between the battery and the load circuit 4 BTl, the load circuit comprises a MOS transistor short-circuit protection circuit protection 1, the short circuit detecting circuit 2, the microcontroller 2 and the load circuit for detecting short-circuiting MOS transistor switch circuit 3, M0S tube reverse battery protection circuit for protection, short-circuit detection circuit, microcontroller for sending the detection result of the short circuit detecting circuit 2 switching signal, MOS tube 3 a circuit for the switching circuit on or off according to the load signal causes the switch. 本负载短路保护电路工作时,由MOS管保护电路1保证蓄电池的正接工作,如蓄电池反接则MOS管保护电路1中的第一MOS管Q6截止导致整个蓄电池和负载电路不工作,起到反接保护的作用;短路检测电路2通过检测第一MOS管Q6的导通阻抗判断是否有大电流以及大电流的时间通过负载电路来判断负载电路否短路,如负载电路上出现大电流并持续一段时间(如2ms,与负载上电瞬间的冲击电流区分开来,冲击电流也可能会高于动作电流,但持续时间都很短, 微秒级),则将检测结果发给单片机,单片机根据所述检测结果关闭MOS管开关电路3中的第二MOS管Q4以断开负载电路,起到负载短路保护作用。 This work load short-circuit protection circuit, the protection circuit 1 by the MOS transistor being connected to the battery to ensure the work, such as reverse battery protection circuit of the MOS transistor 1 in a first MOS transistor Q6 turns off cause the entire battery and the load circuit does not work, play a counter connection protective effects; short detection circuit 2 is turned on by detecting a first MOS transistor Q6 of the impedance is determined whether a time of large current and a large current through the load circuit to determine whether a short-circuit load circuit, a large current such as occurs for a period of the load circuit time (e.g., 2ms, electric shock and a load current regions separate moment, inrush current may be higher than the operating current, but very short duration, microseconds), then the detection results to the microcontroller, the microcontroller according to the a detection result of said MOS transistor switch circuit 3 turn off the second MOS transistor Q4 in order to disconnect the load circuit, a load short-circuit protection functions. 通过双MOS管组成的MOS管保护电路1和MOS管开关电路3以及短路检测电路2使得本发明的负载短路保护电路成本低, 短路检测电路检测MOS管保护电路的导通阻抗,不会增加负载回路的阻抗。 MOS circuit by a double pipe protection MOS transistor and a MOS transistor composed of a switching circuit 3 and the low load so that the present invention is the cost of the short protection circuit short circuit detecting circuit 2, the short-circuit detecting circuit protection circuit MOS transistor on-resistance, without increasing the load impedance circuit.

[0038] 如图4所示,在本发明的负载短路保护电路的电路结构图中,短路检测电路2包括比较器U2D和参考电压产生电路,参考电压产生电路连接到比较器U2D的第一输入端,MOS 管保护电路1的第一MOS管Q6的源极连接到比较器U2D的第二输入端,比较器U2D的输出端连接到单片机的第一输入端。 [0038] As shown, in the circuit configuration diagram of a load short-circuit protection of the present invention, the short-circuit detection circuit 2 includes a comparator U2D and the reference voltage generating circuit 4, the reference voltage generating circuit is connected to a first input of comparator U2D a second input terminal, a first MOS MOS tube of a protection circuit source Q6 is connected to the comparator U2D, the output of comparator U2D is connected to a first input of the microcontroller. 本短路检测电路2的工作原理如下:短路检测点为第一MOS 管Q6的源极,检测电阻为第一MOS管Q6的导通阻抗,一般在3-10毫欧;比较器U2D的参考电压由第一分压电阻R28、第二分压电阻R30分压产生。 Working principle of the short circuit detecting circuit 2 is as follows: The first short detection point source MOS transistor Q6 is, as a first sensing resistor impedance MOS transistor Q6 is turned on, usually in 3-10 milliohms; reference voltage comparator U2D a first voltage dividing resistor R28, a second voltage dividing resistor R30 voltage divider. 当发生短路的时候,第一MOS管Q6的源极会产生较大的电压,当电流升到一定程度时,第一MOS管Q6的源极的电压也随之高于参考电压,使得比较器U2D的输出端INT2为低电平,单片机探测到INT2有下降沿后, 立即通过Q4_SW来控制MOS管开关电路3断开负载电路。 When a short circuit occurs, a first electrode of the MOS transistor Q6 source will have a greater voltage, when the current rose to a certain extent, a first voltage source MOS transistor Q6 will also higher than the reference voltage, so that the comparator the output of U2D is low INT2, INT2 microcontroller to detect the falling edge, immediately switching circuit controlled by the MOS transistor Q4_SW 3 off the load circuit. 该部分的电路设计要点主要为参考电压的选取(由第一分压电阻R28和第二分压电阻R30分压得到),参考电压与第一MOS 管Q6的导通阻抗及动作电流有关,例如:第一MOS管Q6的导通阻抗为6毫欧,动作电流在90A,那么参考电压为6*90mV = 0. 54V。 The portion of the circuit design elements mainly selected reference voltage (obtained from the first voltage dividing resistor R28 and a second voltage dividing resistor R30 divided voltage), the reference voltage and on-resistance of the first MOS transistor Q6 and the current operation related, e.g. : on-resistance of a first MOS transistor Q6 6 milliohms 9OA current operation, then the reference voltage of 6 * 90mV = 0. 54V. 当然,第一MOS管Q6的导通阻抗不是一个精确的数值,并且随着温度的改变而改变,所以在设计的时候需要以最恶劣的情况来设计,例如,第 Of course, the on-resistance of the first MOS transistor Q6 is not an exact value, and change with changes in temperature, so the time required to design the worst case be designed, for example, the

7一MOS管Q6的最高工作温度为100°C,在该温度下,第一MOS管Q6的最高导通阻抗为6. 5 毫欧,要求在所有情况下,短路的动作电流均高于60A,那么参考电压则要选取6. 5*60mV = 0. 39V,当第一MOS管Q6温度较低时,动作电流也会随之升高,那么可以计算该参考电压下的最大动作电流,来检验设计是否符合要求:假设第一MOS管Q6工作的最低温度为-30°C, 最小的导通阻抗为4. 3毫欧,那么最大的动作电流=390mV/4. 3m Ω = 90. 7Α,检验符合设计要求。 7 a MOS transistor Q6 is the maximum operating temperature is 100 ° C, at this temperature, the maximum on-resistance of a first MOS transistor Q6 is 6.5 milliohms, required in all cases, the operation of short-circuit current higher than 60A , then the reference voltage will have to select 6. 5 * 60mV = 0. 39V, when the temperature is low the first MOS transistor Q6, the current operation will also rise, then to calculate the maximum operating current at the reference voltage to compliance test design: a first MOS transistor Q6 is assumed that the minimum operating temperature of -30 ° C, the smallest on-resistance of 4.3 milliohms, then the maximum operating current = 390mV / 4 3m Ω = 90. 7Α. inspection meets the design requirements. 短路检测电路的结构做到快速响应的同时,也简化了负载功率回路的结构。 Short circuit detecting circuit configuration to achieve rapid response, but also simplifies the structure of the power load circuit.

[0039] 如图4所示,在本发明的负载短路保护电路的电路结构图中,第一MOS管Q6的源极经MOS管开关电路3的第二MOS管Q4连接到所述负载电路,第一MOS管Q6的栅极连接到所述蓄电池的正极,第一MOS管Q6的漏极连接到所述蓄电池的负极。 [0039] As shown in FIG. 4, in the circuit configuration diagram of a load short-circuit protection of the present invention, the source of the first MOS transistor Q6 is switching circuit via the MOS transistor Q4 3 second MOS transistor is connected to the load circuit, the gate of the first MOS transistor Q6 is connected to the positive electrode of the battery, the drain of the first MOS transistor Q6 is connected to the negative electrode of the battery. 图中的MOS管保护电路1还包括第一限流电阻R8以及第一稳压管Ζ5,第一稳压管Ζ5的阴极通过第一限流电阻R8连接到所述蓄电池的正极,第一稳压管Ζ5的阳极连接到第一MOS管Q6的源极;第一MOS管Q6的栅极通过第一限流电阻R8连接到所述蓄电池的正极。 MOS transistor protection circuit of Figure 1 further comprises a first current limiting resistor R8 and zener diode Ζ5 first, a first zener diode connected to the cathode through Ζ5 first current limiting resistor R8 to the positive electrode of the battery, a first stable Ζ5 anode pressure pipe is connected to the source of the first MOS transistor Q6 is; the gate of a first MOS transistor Q6 is connected to the positive electrode of the battery through a first current limiting resistor R8. 因此大功率系统一般都采用这种结构。 Thus high power systems typically use this configuration. 蓄电池正接时,第一MOS管Q6在第一限流电阻R8和第一稳压管Ζ5的作用下为常导通状态。 When the battery positive contact, a first MOS transistor Q6 under the action of a first current limiting resistor R8 and a first regulator Ζ5 a normally conducting state. MOS管保护电路的这种结构可以很好的防止蓄电池反接时对负载电路及负载短路保护电路的破坏。 MOS transistor protection circuit of such a configuration can well prevent damage to the load circuit and load short circuit when reverse battery protection.

[0040] 如图4所示,在本发明的负载短路保护电路的电路结构图中,短路检测电路2还包括所述比较器保护电路,所述比较器保护电路包括第二稳压管Ζ8以及第二滤波电容C13, 第二稳压管Ζ8的阳极接地,阴极连接到比较器U2D的第二输入端;第二滤波电容C13连接在第二稳压管Ζ8的两端。 [0040] As shown in FIG. 4, in the circuit configuration diagram of a load short-circuit protection of the present invention, the short circuit detecting circuit 2 further includes a protection circuit of the comparator, said comparator circuit comprises a second zener diode protection and Ζ8 second filtering capacitor C13, a second zener diode Ζ8 anode is grounded, and a cathode connected to a second input of comparator U2D terminal; a second filter capacitor C13 is connected across a second zener diode Ζ8. 当蓄电池反接时,会有较大的负压加载在保护电阻R29上,第二稳压管Ζ8将比较器U2D第二输入端的电压稳定在-0. 6V〜-0. 7V而不受损坏;当发生上述情况时,会有较大的电压加载在保护电阻R29两端,为了满足功耗的需要而不烧毁,保护电阻R29应该选取功率在0. 25W及以上。 When reverse battery, a large negative pressure will be loaded on the protective resistor R29, a second voltage regulator Ζ8 the second input of comparator U2D is stable at -0. 6V~-0. 7V without damage ; when this occurs, there will be a large voltage applied across the protective resistor R29, the power consumption in order to meet needs without burning protective resistor R29 should be selected 0. 25W power and above. 比较器保护电路的设置保护了短路检测电路中的比较器不会由于大电流而被烧毁。 Comparator protection circuit protection circuit short-circuit detection comparator does not burned because of the large current.

[0041 ] 如图4所示,在本发明的负载短路保护电路的电路结构图中,MOS管开关电路3还包括使第二MOS管Q4导通或截止的导通关闭电路;第二MOS管Q4的源极连接到第一MOS管Q6的源极,第二MOS管Q4的漏极连接到负载电路,第二MOS管Q4的栅极连接到所述导通关闭电路。 [0041] As shown, in the circuit configuration diagram of a load short-circuit protection of the present invention, the MOS transistor 3 further comprises a switching circuit 4 of the second MOS transistor Q4 is turned off or the circuit is turned off; a second MOS transistor source of Q4 is connected to the source electrode of the first MOS transistor Q6, the drain of the second MOS transistor Q4 is connected to the load circuit, the gate of the second MOS transistor Q4 is connected to the conduction circuit closed. 所述导通关闭电路也可采用驱动IC的驱动电路或其他用分离器件搭建的驱动电路。 The circuit may also be turned off drive circuit or other separating device drive circuit built in an IC. 如有分离器件搭建的导通关闭电路可以是包括第一三极管Τ4、第二三极管Τ5、第一二极管D3以及第三三极管Τ8,第一三极管Τ4的发射极连接到所述单片机的输出端,第一三极管Τ4的基极连接到标准电源,第一三极管Τ4的集电极连接到第二三极管Τ5的基极,第二三极管Τ5的发射极连接到驱动电源VSW,第二三极管Τ5的集电极连接到第一二极管D3 的阳极,第一二极管D3的阴极连接到第二MOS管Q4的栅极;第三三极管Τ8的发射极连接到第二MOS管Q4的栅极,第三三极管Τ8的基极连接到第一二极管D3的阳极,第三三极管Τ8的集电极连接到所述第一MOS管Q6的源极。 If the separation device is built turned off circuit may include a first transistor Τ4, a second transistor Τ5, a first transistor and a third diode D3 Τ8, transmitting a first electrode of the transistor [tau] 4 connected to the output of the microcontroller, a first transistor base connected to Τ4 standard power supply, the collector of the first transistor is connected to the base of the second Τ4 Τ5 pole transistor, a second transistor Τ5 the emitter is connected to the VSW drive power, the collector of the second transistor is connected to the anode of the first Τ5 diode D3, the cathode of the first diode D3 is connected to the gate of the second MOS transistor Q4; third Τ8 transistor emitter connected to the gate of the second MOS transistor Q4, the base of the third transistor Τ8 connected to the anode of the first diode D3 is connected to the collector of the third transistor to the Τ8 a source of said first MOS transistor Q6 is. MOS管开关电路3的设置使得第二MOS管通过导通关闭电路对单片机的信号做出快速响应。 MOS transistor switch circuit 3 is provided such that the second MOS transistor is turned off by the circuit to respond quickly to signal the microcontroller. 采用驱动IC驱动第二MOS管给了用户更多的选择余地。 Using a second driving MOS transistor driver IC gives the user more choice. 采用分离器件构造的导通关闭电路成本低,开关速度可调。 Low cost circuit is turned off using the separating device configuration, the switching speed is adjustable. 本导通关闭电路还可包括第二限流电阻R9、第一偏置电阻R10、第三限流电阻R11、第四限流电阻R12以及第二偏置电阻R60,第一三极管Τ4的发射极通过第二限流电阻R9连接到所述单片机的输出端,第一二极管D3的阴极通过第三限流电阻Rll连接到第二MOS管Q4的栅极,第一偏置电阻RlO连接在第二三极管T5的发射极和基极之间,第三三极管T8的发射极通过第四限流电阻R12连接到第二MOS管Q4的栅极,第二偏置电阻R60连接在第三三极管T8的基极和集电极之间。 This closed circuit may further comprise conducting a second current limiting resistor R9, a first bias resistor R10, a third current-limiting resistor R11, a current limiting resistor R12 and the fourth a second bias resistor R60, a first transistor Τ4 emitter connected to an output of the microcontroller through a second current limiting resistor R9, a first cathode of the diode D3 is connected to the gate of the second MOS transistor Q4 through the third current limiting resistor Rll, a first bias resistor RlO is connected between the emitter and the base of the second transistor T5, the emitter of the third transistor T8 is connected to the gate of the second MOS transistor Q4 through the fourth current limiting resistor R12, a second bias resistor R60 a third transistor T8 is connected between the base and the collector. MOS管开关电路3工作原理如下:需要导通负载回路时,Q4_Sff由单片机输出低电平,则第一三极管T4导通,在第一偏置电阻RlO的作用下第二三极管T5导通,驱动电源VSW提供驱动电压(例如+10V),该电压经过第二三极管T5、第一二极管D3、第三限流电阻Rll路径加载到第二MOS管Q4的栅极上,使得栅极对源极有驱动电压(例如9. 3V), 从而使第二MOS管Q4导通;需要断开负载回路时,Q4_SW由单片机输出高电平,则第一三极管T4和第二三极管T5截止,驱动电源VSW、第二三极管T5、第一二极管D3、第三限流电阻Rll路径是不导通的,在第二偏置电阻R60、第三三极管T8、第四限流电阻R12电路结构的作用下,第三三极管T8导通,第二MOS管Q4的栅源极间的结电容通过第二偏置电阻R60、第三三极管T8、第四限流电阻R12电路放电,使第二MOS管Q4的栅源极间电压由9. 3V变为OV(VSW = IOV的情况下) 3 MOS transistor switching circuit works as follows: When turned on the load circuit requires, Q4_Sff by the microcontroller outputs a low level, the first transistor T4 is turned on, under the action of the first bias resistor RlO second transistor T5 turned on, power supply VSW driving voltage (e.g., + 10V), the second voltage through the transistor T5, a first diode D3, the third current limiting resistor Rll loaded path to the gate of the second MOS transistor Q4 , so that the gate-to-source drive voltage (e.g. 9. 3V), so that the second MOS transistor Q4 is turned on; when the need to disconnect the load circuit, Q4_SW by the microcontroller outputs a high level, the first transistor T4 and a second transistor T5 is turned off, the VSW drive power, a second transistor T5, a first diode D3, the third current limiting resistor Rll path is not conducting, the second bias resistor R60, the third three- diode T8, under the action of the current limiting resistor R12 fourth circuit configuration, the third transistor T8 is turned on, the second MOS transistor junction capacitance between the Q4 gate-source via a second bias resistor R60, a third three-pole (in the case of VSW = IOV) tubes T8, the current limiting resistor R12 fourth discharge circuit, the second MOS transistor between the gate-source voltage of Q4 is changed OV 9. 3V 实现第二MOS管Q4断开。 Implementation of the second MOS transistor Q4 is turned off. 在该电路中,第三限流电阻Rll控制第二MOS管Q4导通的速度,而第四限流电阻R12控制第二MOS管Q4关闭的速度,为了在短路保护及自恢复时第二MOS管Q4不因为开关速度慢而受损坏,第三限流电阻Rll和第四限流电阻R12 —般为几百欧姆,甚至几十欧姆,这样可以快速导通和快速关闭第二MOS管Q4, 一般第二MOS管Q4驱动信号Ves的上升时间和下降时间在10微秒以内。 In this circuit, the third control current limiting resistor Rll second MOS transistor Q4 is turned on the speed limiting resistor R12 and the fourth MOS transistor Q4 for controlling the second speed of closing, in order to short-circuit protection and self-healing second MOS since the switching transistor Q4 is slow and not damaged, the third and fourth current-limiting resistor Rll limiting resistor R12 - generally a few hundred ohms, or even tens of ohms, which can quickly turn on and off the second MOS transistor Q4 quickly, Usually the rise time of the second MOS transistor Q4 driving signal Ves and fall times less than 10 microseconds.

[0042] 如图4所示,在本发明的负载短路保护电路的电路结构图中,所述负载短路保护电路还包括当MOS管开关电路3断开所述负载电路时,用于接通所述负载电路的自恢复检测电路4,自恢复检测电路4包括第三分压电阻R39以及第四分压电阻R40,第三分压电阻R39与第四分压电阻R40的连接节点连接到所述蓄电池的负极,第三分压电阻R39的另一端连接到所述蓄电池的正极,第四分压电阻R40的另一端接地,第三分压电阻R39与第四分压电阻R4的连接节点连接到所述单片机的第二输入端。 [0042] As shown in FIG. 4, in the circuit configuration diagram of a load short-circuit protection of the present invention, the load when the short circuit protection circuit further comprises a MOS transistor switch circuit 3 is turned off when said load circuit, for turning on the a load circuit of said self-recovery detecting circuit 4, since the resumption of the detection circuit 4 includes a third voltage dividing resistor R39 and a fourth voltage dividing resistors R40, R39 of the third voltage dividing resistor and the fourth voltage dividing resistor R40 is connected to the connection node the negative electrode of the battery, the other end of the third voltage-dividing resistor R39 is connected to the positive electrode of the battery, the other end of the fourth voltage dividing resistors R40 and R39 of the third voltage dividing resistor and the fourth voltage dividing resistor R4 is connected to the connection node the second input of the microcontroller. 自恢复检测电路4工作原理如下: DISC_V0L的电压分为两种情况,当负载电路短路时,蓄电池的电压直接加载到第四分压电阻R40端,经第三稳压管Zl的稳压后,DISC_V0L为5. 6V ;当负载电路断开即悬空时,DISC_ VOL的电压值为第三分压电阻R39和第四分压电阻R40的分压值,例如第三分压电阻R39为560K,第四分压电阻R40为56K,蓄电池端电压最高不超过33V,则DISC_V0L < 3V。 Recovery from the detection circuit 4 operates as follows: The voltage DISC_V0L divided into two cases, when the load short circuit, the battery voltage is loaded directly onto the end of the fourth voltage dividing resistors R40, the zener diode Zl regulator after the third, DISC_V0L to 5. 6V; i.e. when the load circuit is disconnected vacant, DISC_ VOL is the voltage value of the third voltage dividing resistors R39 and R40 of the fourth voltage dividing resistors, for example, a third voltage dividing resistor R39 is 560K, the first resistor R40 quarter of 56K, the maximum battery terminal voltage does not exceed 33V, the DISC_V0L <3V. 自恢复的过程如下:当负载电路发生短路保护以后,单片机探测DISC_V0L的电压,当仍然大于等于5V时,则保持第二MOS管Q4的关断状态;DISC_V0L的电压小于4V时,则说明短路线路被断开了,重新导通负载电路,实现了自恢复。 Self-recovery procedure is as follows: When the load short-circuit protection circuit, the voltage detection DISC_V0L the microcontroller, while still not less than 5V, the remains off the second MOS transistor Q4; DISC_V0L voltage is less than 4V, then the short-circuit line is disconnected, the load circuit is turned on again, to achieve the self-recovery. 自恢复检测电路使得负载电路短路后可以自动恢复,减小了短路故障的次数,更加接近实际的应用要求。 Recovery from such a load detecting circuit can be automatically restored after the short circuit, reducing the number of short-circuit failure, closer to the actual application requirements.

[0043] 如图4所示,在本发明的负载短路保护电路的电路结构图中,所述负载短路保护电路还包括瞬态高压抑制电路,瞬态高压抑制电路包括输入瞬态高压抑制电路和输出瞬态高压抑制电路,输入瞬态高压抑制电路包括输入稳压电容C28,输出瞬态高压抑制电路包括第二二极管D2以及输出稳压电容C29,输入稳压电容C28连接在所述蓄电池的正极和负极之间,第二二极管D2的阴极连接到所述负载电路的阳极,第二二极管D2的阳极连接到所述负载电路的阴极,输出稳压电容C29与所述负载电路并联。 [0043] As shown in FIG. 4, in the circuit configuration diagram of a load short-circuit protection of the present invention, the load short-circuit protection circuit further includes a transient suppression circuit high voltage, high voltage transient suppression circuit includes an input transient suppression circuit and a high voltage high voltage transient suppression circuit output, the input high voltage transient suppression circuit includes an input voltage stabilizing capacitor C28, the output of high voltage transient suppression circuit includes a second diode D2 and an output stabilizing capacitance-C29, the input voltage stabilizing capacitor C28 is connected between the battery between the positive and negative electrodes, the cathode of the second diode D2 is connected to the anode of the load circuit, the anode of the second diode D2 is connected to the cathode of the load circuit, the output of the regulator and the load capacitor C29 parallel circuit. 输入瞬态高压抑制电路还包括连接在所述蓄电池的正极和负极之间的TVS管、压敏电阻或热敏电阻。 Input high voltage transient suppression circuit further comprises a TVS diode, a varistor or thermistor is connected between the positive and negative electrodes of the battery. 瞬态高压抑制电路的工作原理如下:短路保护关断的瞬间,出现高压毛刺(大于50V,持续I-IOus),原因是: 太阳能接线的电缆线有继生电感存在,当大电流通过后快速关断,继生电感的作用会产生 High voltage transient suppression circuit works as follows: instantaneous short circuit protection off, voltage spikes can occur (greater than 50V, continuous I-IOus), because: a solar connection cables there exist inductance of relay, when a large current by flash turn off, following the action of inductances will produce

9较高的瞬间电压,严重的可能会损坏MOS管等器件。 9 high instantaneous voltage, serious damage may be MOS transistors and other devices. 为了吸收该瞬间电压,在负载输出端加快速恢复的第二二极管D2和输出稳压电容C29,第二二极管D2用来导流,输出稳压电容C29用来吸收毛刺;在蓄电池输入端加TVS管和输入稳压电容C28,用来吸收瞬间的高压毛刺。 In order to absorb the instantaneous voltage at the output of the second diode D2 and the load output stabilizing capacitance C29 plus fast recovery diode D2 to the second guide, to absorb the output voltage stabilizing capacitor C29 burr; the battery TVS diode plus input terminal and the input voltage stabilizing capacitor C28, to absorb the momentary high-voltage spikes. 瞬态高压抑制电路的TVS管也可以采用压敏电阻或者热敏电阻等器件,或者去除该器件,加大输入稳压电容C28的容值来处理。 TVS tube high voltage transient suppression circuit may also be employed such as a thermistor or varistor device, or the device is removed, increase the capacitance of the capacitor C28 to the regulator input process.

[0044] 下面通过图5的负载短路保护电路的单片机的判断流程图来说明本负载短路保护电路的具体工作流程:当发生短路瞬间,短路电流急剧上升,升到比较器U2D定义的动作电流后,比较器U2D会产生一个低电平给单片机的第一输入端,单片机判断该短路电流是否持续一段时间(如2ms,与负载电路上电瞬间的冲击电流区分开来,冲击电流也可能会高于动作电流,但持续时间都很短,微秒级的),如果是,则进行短路保护的动作:断开负载电路回路,故障代码报警。 When the sharp rise in the instantaneous short circuit, short-circuit current, the operation of the current comparator U2D raised defined: [0044] The following explains a specific work flow of the short circuit protector is a flowchart of determination by the MCU circuit protection circuit of FIG. 5 , comparator U2D generates a low level to the first input of a microcontroller, the microcontroller determines whether the short-circuit current for a period of time (e.g., 2ms, electric shock and the load circuit current moment separate regions, a high inrush current may also be in the current operation, but the duration is very short, microsecond), if yes, operation of short-circuit protection: disconnecting the load circuit loop fault code alarm. 短路保护后的恢复通过探测DISC_V0L的电压,一旦电压低于4V,则说明负载电路的短路已经恢复了,负载电路回路重新导通。 Recovery short circuit protection by detecting a voltage DISC_V0L, once the voltage is lower than 4V, then the short circuit has been restored to the load circuit, the load circuit loop is turned on again.

[0045] 以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。 [0045] Other related art technologies described above are only embodiments of the present invention, not intended to limit the scope of the present invention, all utilize the present specification and drawings taken transform equivalent structures, or applied directly or indirectly shall fall within the scope of protection of the present invention.

Claims (10)

  1. 一种负载短路保护电路,连接在蓄电池和负载电路之间,其特征在于,包括:用于蓄电池反接保护的MOS管保护电路(1);用于检测负载电路短路的短路检测电路(2);根据所述短路检测电路(2)的检测结果发出开关信号的单片机;以及根据所述开关信号使所述负载电路导通或断开的MOS管开关电路(3)。 A load short-circuit protection circuit connected between the battery and the load circuit, characterized by comprising: a reverse battery protection circuit protection MOS transistor (1); means for detecting a short circuit of a load short-circuit detection circuit (2) ; (2) emits a detection result signal according to the single-chip switch short detection circuit; and an MOS transistor switching circuit in accordance with the switching signal causes the load circuit is turned on or off (3).
  2. 2.根据权利要求1所述的负载短路保护电路,其特征在于,所述短路检测电路(2)包括比较器(U2D)以及参考电压产生电路,所述参考电压产生电路连接到所述比较器(U2D)的第一输入端,所述M0S管保护电路(1)的第一M0S管(Q6)的源极连接到所述比较器(U2D) 的第二输入端,所述比较器(U2D)的输出端连接到所述单片机的第一输入端。 2. The circuit protection circuit according to claim 1, wherein said short circuit detecting circuit (2) comprises a comparator (U2D) and a reference voltage generating circuit, the reference voltage generating circuit connected to said comparator (U2D) a first input terminal, the protection circuit M0S tube (1) a first source M0S tube (Q6 are) is connected to said comparator (U2D) to a second input of the comparator (U2D ) the output is connected to a first input of the microcontroller.
  3. 3.根据权利要求2所述的负载短路保护电路,其特征在于,所述第一 M0S管(Q6)的源极经所述M0S管开关电路(3)的第二M0S管(Q4)连接到所述负载电路,所述第一M0S管(Q6)的栅极连接到所述蓄电池的正极,所述第一M0S管(Q6)的漏极连接到所述蓄电池的负极。 The circuit protection circuit according to claim 2, characterized in that the source of the first tube M0S (Q6 are) pole through the tube M0S switching circuit (3) a second tube M0S (Q4) is connected to the said load circuit, a gate of the first tube M0S (Q6 are) connected to the positive electrode of the battery, a drain of the first tube M0S (Q6 are) connected to the negative electrode of the battery.
  4. 4.根据权利要求2所述的负载短路保护电路,其特征在于,所述短路检测电路(2)还包括所述比较器保护电路,所述比较器保护电路包括第二稳压管(Z8)以及第二滤波电容(C13),所述第二稳压管(Z8)的阳极接地,阴极连接到所述比较器(U2D)的第二输入端;所述第二滤波电容(C13)连接在所述第二稳压管(Z8)的两端。 4. The circuit protection circuit according to claim 2, wherein said short circuit detecting circuit (2) further comprising a protection circuit of the comparator, said comparator comprises a second zener diode protection circuit (Z8) the anode is grounded and a second filter capacitor (C13), said second zener diode (Z8), and a cathode connected to said comparator (U2D) a second input terminal; the second filtering capacitor (C13) is connected in both ends of the second zener diode (Z8) of.
  5. 5.根据权利要求2所述的负载短路保护电路,其特征在于,所述M0S管开关电路(3)还包括使所述第二M0S管(Q4)导通或截止的导通关闭电路;所述第二M0S管(Q4)的源极连接到所述第一M0S管(Q6)的源极,所述第M0S管(Q4) 的漏极连接到所述负载电路,所述第M0S管(Q4)的栅极连接到所述导通关闭电路。 5. The circuit protection circuit according to claim 2, wherein said tube M0S switching circuit (3) further comprises said second pipe M0S (Q4) is turned off or the circuit is turned off; the said second tube M0S source (Q4) is connected to said first tube M0S (Q6 are) a source, a drain pipe M0S said first (Q4) is connected to said load circuit, said first tube M0S ( Q4) is connected to the gate circuit is turned off.
  6. 6.根据权利要求5所述的负载短路保护电路,其特征在于,所述导通关闭电路为采用驱动IC的驱动电路。 6. The circuit protection circuit as claimed in claim 5, wherein said conductive circuit is closed the driver circuit of the driver IC.
  7. 7.根据权利要求6所述的负载短路保护电路,其特征在于,所述导通关闭电路包括第一三极管(T4)、第二三极管(T5)、第一二极管(D3)以及第三三极管(T8),所述第一三极管(T4)的发射极连接到所述单片机的输出端,所述第一三极管(T4)的基极连接到标准电源,所述第一三极管(T4)的集电极连接到所述第二三极管(T5)的基极,所述第二三极管(T5)的发射极连接到驱动电源(VSW),所述第二三极管(T5) 的集电极连接到所述第一二极管(D3)的阳极,所述第一二极管(D3)的阴极连接到所述第M0S管(Q4)的栅极;所述第三三极管(T8)的发射极连接到所述第M0S管(Q4)的栅极,所述第三三极管(T8)的基极连接到所述第一二极管(D3)的阳极,所述第三三极管(T8)的集电极连接到所述第一M0S管(Q6)的源极。 7. The circuit protection circuit according to claim 6, wherein the shutdown circuit comprises a first conduction transistor (T4), a second transistor (T5), a first diode (D3 ) and a third transistor (T8), said first transistor (T4) emitter connected to an output of the microcontroller, the first transistor (T4) the base is connected to a standard power the collector of the first transistor (T4) is connected to the second transistor (T5) the base of the second transistor (T5) is connected to the emitter of the driving power source (the VSW) , the collector of the second transistor (T5) is connected to said first diode (D3) the anode of said first diode (D3) is connected to the cathode of said first tube M0S (Q4 ) gate; said third transistor (T8) emitter connected to the gate of said first tube M0S (Q4), said third transistor (T8) is connected to said second base a diode (D3) of the anode, the collector of the third transistor (T8) is connected to the first tube M0S (Q6 are) source.
  8. 8.根据权利要求1所述的负载短路保护电路,其特征在于,所述负载短路保护电路还包括当所述M0S管开关电路断开所述负载电路时,用于接通所述负载电路的自恢复检测电路(4),所述自恢复检测电路(4)包括第三分压电阻(R39)以及第四分压电阻(R40),所述第三分压电阻(R39)与所述第四分压电阻(R40)的连接节点连接到所述蓄电池的负极,所述第三分压电阻(R39)的另一端连接到所述蓄电池的正极,所述第四分压电阻(R40)的另一端接地,所述第三分压电阻(R39)与所述第四分压电阻(R40)的连接节点连接到所述单片机的第二输入端。 8. The circuit protection circuit according to claim 1, wherein said short circuit protection circuit further comprises a load when the switching circuit is opened tube M0S said load circuit, said load circuit for turning on the recovery from the detection circuit (4), said self-recovery detecting circuit (4) comprises a third voltage dividing resistor (R39) and a fourth voltage dividing resistor (R40), said third voltage dividing resistor (R39) and the first quarter resistor (R40) connected to a connection node of the cathode of the battery, the other terminal of the third voltage dividing resistor (R39) is connected to the positive electrode of the battery, the fourth voltage dividing resistor (R40) of the other end, the third voltage dividing resistor (R39) is connected to a second input of the microcontroller and the fourth voltage dividing resistor (R40) is connected to the node.
  9. 9.根据权利要求1所述的负载短路保护电路,其特征在于,所述负载短路保护电路还包括瞬态高压抑制电路,所述瞬态高压抑制电路包括输入瞬态高压抑制电路和输出瞬态高压抑制电路,所述输入瞬态高压抑制电路包括输入稳压电容(C28),所述输出瞬态高压抑制电路包括第二二极管(D2)以及输出稳压电容(C29),所述输入稳压电容(C28)连接在所述蓄电池的正极和负极之间,所述第二二极管(D2)的阴极连接到所述负载电路的阳极,所述第二二极管(D2)的阳极连接到所述负载电路的阴极,所述输出稳压电容(C29)与所述负载电路并联。 9. The circuit protection circuit according to claim 1, wherein said circuit protection circuit further includes a transient suppression circuit high voltage, the transient high voltage transient suppression circuit includes an input and an output high voltage transient suppression circuit high voltage suppression circuit, the input transient suppression circuit includes a high voltage regulator input capacitance (the C28), the output high voltage transient suppression circuit includes a second diode (D2) and an output stabilization capacitor (-C29), the input stabilizing capacitance (the C28) is connected between the positive and negative electrodes of the battery, the second diode (D2) is a cathode connected to the anode of the load circuit, the second diode (D2) of an anode connected to the cathode of the load circuit, the output stabilizing capacitance (-C29) in parallel with the load circuit.
  10. 10.根据权利要求9所述的负载短路保护电路,其特征在于,所述输入瞬态高压抑制电路还包括连接在所述蓄电池的正极和负极之间的TVS管、压敏电阻或热敏电阻。 10. The circuit protection circuit according to claim 9, wherein said input transient suppression circuit further includes a high voltage is connected between the positive and negative electrodes of the battery of the TVS diode, a varistor or a thermistor .
CN 201010268117 2010-08-31 2010-08-31 Load short-circuit protection circuit CN101944715B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010268117 CN101944715B (en) 2010-08-31 2010-08-31 Load short-circuit protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010268117 CN101944715B (en) 2010-08-31 2010-08-31 Load short-circuit protection circuit

Publications (2)

Publication Number Publication Date
CN101944715A true CN101944715A (en) 2011-01-12
CN101944715B CN101944715B (en) 2013-01-30

Family

ID=43436558

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201010268117 CN101944715B (en) 2010-08-31 2010-08-31 Load short-circuit protection circuit

Country Status (1)

Country Link
CN (1) CN101944715B (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790374A (en) * 2011-12-19 2012-11-21 洛阳理工学院 Short circuit protection circuit
CN102969701A (en) * 2012-11-30 2013-03-13 桂林海博泰克电子科技有限公司 Battery protection and sparkle suppression circuit
CN102996885A (en) * 2012-10-19 2013-03-27 宁波长壁流体动力科技有限公司 Protection drive circuit of small-power electromagnetic coil
WO2014134781A1 (en) * 2013-03-05 2014-09-12 Xiang Zhiyong Control device and method for overcurrent or short-circuit protection of electronic cigarette
CN104052085A (en) * 2013-03-11 2014-09-17 深圳硕日新能源科技有限公司 Solar-energy controller drive circuit with short-circuit protection function
CN104466891A (en) * 2014-12-17 2015-03-25 浪潮电子信息产业股份有限公司 Short-circuit protection device and method based on Feiteng platform
CN104485706A (en) * 2014-12-09 2015-04-01 上海中兴派能能源科技有限公司 Discharge circuit for lithium battery pack
CN104795807A (en) * 2015-04-16 2015-07-22 上海空间电源研究所 High-reliability current protecting circuit for astronavigation
CN106199299A (en) * 2015-05-27 2016-12-07 英飞凌科技股份有限公司 The system and method for the short-circuit detecting in load bearing chain
CN106410740A (en) * 2016-06-23 2017-02-15 北京全路通信信号研究设计院集团有限公司 Power supply port protective circuit
CN104331141B (en) * 2013-07-22 2017-04-12 纬创资通股份有限公司 Overcurrent protection circuit and server using the same
CN110165740A (en) * 2019-06-03 2019-08-23 重庆斯微奇电子技术有限公司 A kind of battery protecting circuit and power supply unit

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187057A (en) * 1992-12-22 1994-07-08 Matsushita Electric Works Ltd Short-circuit protecting circuit
US5684663A (en) * 1995-09-29 1997-11-04 Motorola, Inc. Protection element and method for protecting a circuit
CN1832285A (en) * 2005-03-10 2006-09-13 通用汽车环球科技运作公司 Nmos reverse battery protection
CN2840439Y (en) * 2005-10-13 2006-11-22 深圳桑达百利电器有限公司 DC power supply load short-circuit self-restoring circuit
CN101136547A (en) * 2006-08-31 2008-03-05 深圳市金威源科技有限公司 Short circuit protection circuit of DC power supply
CN101499654A (en) * 2008-10-23 2009-08-05 天水华天微电子股份有限公司 Instant voltage peak and instant voltage surge suppressor
CN201966576U (en) * 2010-08-31 2011-09-07 深圳拓邦股份有限公司 Load short circuit protection circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187057A (en) * 1992-12-22 1994-07-08 Matsushita Electric Works Ltd Short-circuit protecting circuit
US5684663A (en) * 1995-09-29 1997-11-04 Motorola, Inc. Protection element and method for protecting a circuit
CN1832285A (en) * 2005-03-10 2006-09-13 通用汽车环球科技运作公司 Nmos reverse battery protection
CN2840439Y (en) * 2005-10-13 2006-11-22 深圳桑达百利电器有限公司 DC power supply load short-circuit self-restoring circuit
CN101136547A (en) * 2006-08-31 2008-03-05 深圳市金威源科技有限公司 Short circuit protection circuit of DC power supply
CN101499654A (en) * 2008-10-23 2009-08-05 天水华天微电子股份有限公司 Instant voltage peak and instant voltage surge suppressor
CN201966576U (en) * 2010-08-31 2011-09-07 深圳拓邦股份有限公司 Load short circuit protection circuit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790374A (en) * 2011-12-19 2012-11-21 洛阳理工学院 Short circuit protection circuit
CN102996885B (en) * 2012-10-19 2014-10-08 宁波长壁流体动力科技有限公司 Protection drive circuit of small-power electromagnetic coil
CN102996885A (en) * 2012-10-19 2013-03-27 宁波长壁流体动力科技有限公司 Protection drive circuit of small-power electromagnetic coil
CN102969701A (en) * 2012-11-30 2013-03-13 桂林海博泰克电子科技有限公司 Battery protection and sparkle suppression circuit
WO2014134781A1 (en) * 2013-03-05 2014-09-12 Xiang Zhiyong Control device and method for overcurrent or short-circuit protection of electronic cigarette
CN104052085A (en) * 2013-03-11 2014-09-17 深圳硕日新能源科技有限公司 Solar-energy controller drive circuit with short-circuit protection function
CN104052085B (en) * 2013-03-11 2016-09-07 深圳硕日新能源科技有限公司 A kind of controller for solar drive circuit of band short-circuit protection
CN104331141B (en) * 2013-07-22 2017-04-12 纬创资通股份有限公司 Overcurrent protection circuit and server using the same
CN104485706A (en) * 2014-12-09 2015-04-01 上海中兴派能能源科技有限公司 Discharge circuit for lithium battery pack
CN104466891A (en) * 2014-12-17 2015-03-25 浪潮电子信息产业股份有限公司 Short-circuit protection device and method based on Feiteng platform
CN104795807A (en) * 2015-04-16 2015-07-22 上海空间电源研究所 High-reliability current protecting circuit for astronavigation
CN104795807B (en) * 2015-04-16 2018-02-06 上海空间电源研究所 A kind of aerospace high reliability current protecting circuit
CN106199299A (en) * 2015-05-27 2016-12-07 英飞凌科技股份有限公司 The system and method for the short-circuit detecting in load bearing chain
CN106199299B (en) * 2015-05-27 2019-08-23 英飞凌科技股份有限公司 System and method for the short-circuit detecting in load bearing chain
CN106410740A (en) * 2016-06-23 2017-02-15 北京全路通信信号研究设计院集团有限公司 Power supply port protective circuit
CN110165740A (en) * 2019-06-03 2019-08-23 重庆斯微奇电子技术有限公司 A kind of battery protecting circuit and power supply unit

Also Published As

Publication number Publication date
CN101944715B (en) 2013-01-30

Similar Documents

Publication Publication Date Title
CN100477439C (en) Switch power supply with overvoltage protection and overvoltage protection method thereof
KR20100016100A (en) Voltage surge and overvoltage protection
CN102035169B (en) Input overvoltage protection circuit and DC-DC power supply conversion device
US6768621B2 (en) Contactor feedback and precharge/discharge circuit
CN100487995C (en) Short-circuit protective circuit
CN1153413A (en) Protection element and method for protecting circuit
CN1354561A (en) Insulated gate bipolar transistor IGBT drive protection circuit
US9692225B2 (en) Hybrid DC breaker
CA2833384C (en) Voltage sag corrector using a variable duty cycle boost converter
CN100342647C (en) Circuit for positive power source inputting load electrifying slow starting
CN101174770B (en) Charging protection apparatus
CN1153324C (en) Auxiliary power
CN101119020A (en) Terminal equipment charging overvoltage protective device and method
CN102684479B (en) Charge pump type voltage division circuit and starting method thereof
US9640983B2 (en) Bidirectional hybrid breaker
CN102263544B (en) IGBT driving circuit with electrification protection
CN201533295U (en) IGBT drive and protection circuit
US8350414B2 (en) Semiconductor assisted DC load break contactor
CN101515710B (en) Direct current limiting and breaking device based on countercurrent injection method
CN100569038C (en) LED load protector line
CN101582580B (en) Input/output over-voltage protection circuit
US20070146944A1 (en) Apparatus and methods for testing the life of a leakage current protection device
CN202602326U (en) Charger with over-voltage protection
CN101340185B (en) Synchronous control method of 3 phase AC solid power controller
CN102324835A (en) Insulated gate bipolar transistor (IGBT) driving circuit

Legal Events

Date Code Title Description
C06 Publication
C10 Request of examination as to substance
C14 Granted