CN110611298A - IPM protection system for flywheel energy storage device - Google Patents
IPM protection system for flywheel energy storage device Download PDFInfo
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- CN110611298A CN110611298A CN201910851096.5A CN201910851096A CN110611298A CN 110611298 A CN110611298 A CN 110611298A CN 201910851096 A CN201910851096 A CN 201910851096A CN 110611298 A CN110611298 A CN 110611298A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/10—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current additionally responsive to some other abnormal electrical conditions
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/041—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature additionally responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/042—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using temperature dependent resistors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Protection Of Static Devices (AREA)
Abstract
The invention relates to the technical field of IPM protection circuits, in particular to an IPM protection system for a flywheel energy storage device, which comprises: the circuit driver is respectively connected with the comparator, the IPM unit and the signal generating unit, the comparator outputs a turn-off signal according to output signals of the short-circuit protection unit, the over-temperature protection unit and the over-current protection unit, and the circuit driver controls whether the first pulse signal and the second pulse signal are transmitted to the IPM unit or not according to the turn-off signal. The IPM protection system is composed of hardware, and compared with a system combining software and hardware, the IPM protection system simplifies the system structure, reduces the system development difficulty, improves the safety and the accuracy of the system, and obviously improves the information processing efficiency.
Description
Technical Field
The invention relates to the technical field of IPM protection circuits, in particular to an IPM protection system for a flywheel energy storage device.
Background
IPM (intelligent power module) is an advanced new type of power switching device, which has the advantages of GTR (large power transistor) high current density, low saturation voltage and high voltage resistance, as well as the advantages of MOSFET (field effect transistor) high input impedance, high switching frequency and low driving power. Logic, control, detection and protection circuits are integrated in the IPM, the IPM is convenient to use and wide in application range, the size and the development time of a system are reduced, the reliability of the system is greatly enhanced, the IPM is suitable for the development direction of the current power devices, such as modularization, recombination and Power Integrated Circuit (PIC), and the IPM draws more and more extensive attention in the field of power electronics.
The IPM is taken as an important component of a control system, and the handling and protection of the abnormal working state of the IPM are particularly paid attention to in the using process, but the current protection circuit is implemented by sampling the voltage of a direct current bus, the temperature and current signals in the IPM unit and transmitting the signals to a main controller MCU (microprogrammed control unit), programming the MCU, comparing and analyzing the sampled data, and further judging whether the circuit has over-current, over-temperature and other conditions, and if the over-current, over-temperature and other conditions occur, the MCU sends a blocking signal. The method needs the combination of software and hardware, increases the difficulty and workload of development, and increases the cost because the price of the MCU is higher than that of other electronic components.
In view of the above, it is an urgent technical problem in the art to provide a new IPM protection system for flywheel energy storage device to overcome the above drawbacks of the prior art.
Disclosure of Invention
The present invention addresses the above-identified deficiencies of the prior art by providing an IPM protection system for a flywheel energy storage device.
The object of the invention can be achieved by the following technical measures:
embodiments of the present invention provide an IPM protection system for a flywheel energy storage device, the IPM protection system comprising: the system comprises a signal generating unit, an IPM unit, a short-circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver;
the signal generating unit is used for generating and outputting a first pulse signal and a second pulse signal, and a first IGBT assembly and a second IGBT assembly are arranged in the IPM unit;
the input end of the short-circuit protection unit is respectively connected with the IPM unit and the signal generation unit, the output end of the short-circuit protection unit is connected with the comparator, and the short-circuit protection unit collects a gate-level voltage signal of the first IGBT assembly, a gate-level voltage signal of the second IGBT assembly, the first pulse signal and the second pulse signal and outputs a short-circuit protection signal to the comparator;
the input end of the over-temperature protection unit is connected with the IPM unit, the output end of the over-temperature protection unit is connected with the comparator, and the over-temperature protection unit acquires the temperature of the first IGBT assembly and the temperature of the second IGBT assembly and outputs an over-temperature protection signal to the comparator;
the input end of the over-current protection unit is connected with the IPM unit, the output end of the over-current protection unit is connected with the comparator, and the over-current protection unit collects a current signal flowing through the first IGBT assembly in the IPM unit and a current signal flowing through the second IGBT assembly in the IPM unit and outputs an over-current protection signal to the comparator;
the circuit driver is respectively connected with the comparator, the IPM unit and the signal generating unit, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are simultaneously in a low level state, a turn-off signal output by the comparator is in a low level state, the circuit driver controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit, otherwise, the turn-off signal output by the comparator is in a high level state, and the circuit driver controls the first pulse signal and the second pulse signal to be blocked from being transmitted to the IPM unit.
According to an embodiment of the present invention, the line driver includes a signal input pin, an enable pin, and a signal output pin, the enable pin is connected to the comparator, the input pin is connected to the signal generation unit, the output pin is connected to the IPM unit, the first and second pulse signals are transmitted to the IPM unit through the enable pin when the shutdown signal is in a low level state, and the enable pin blocks the transmission of the first and second pulse signals to the IPM unit when the shutdown signal is in a high level state.
According to an embodiment of the present invention, the short-circuit protection unit includes a short-circuit protection circuit, two first voltage sensors disposed on the first IGBT component, and two second voltage sensors disposed on the second IGBT component, the first voltage sensor and the second voltage sensor are respectively connected to the short-circuit protection circuit, the gate-level voltage signal of the first IGBT component includes an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, the gate-level voltage signal of the second IGBT component includes an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component, the two first voltage sensors are respectively used for collecting an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, and the two second voltage sensors are respectively used for collecting an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component .
According to one embodiment of the present invention, the short-circuit protection circuit includes: the first signal input circuit module, the first signal comparison circuit module and the first signal output circuit module are connected in sequence, the first signal input circuit module is respectively connected with the first voltage sensor, the second voltage sensor and the signal generation unit, and the first signal output module is connected with the comparator; the first signal comparison circuit module comprises a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, wherein the input end of the OR gate logic gate chip is respectively connected with the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, the output end of the OR gate logic gate chip is connected with the first signal output circuit module, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, and the third AND gate logic gate chip outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; and the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.
According to an embodiment of the present invention, the over-temperature protection unit includes an over-temperature protection circuit, a first temperature sensor disposed on the first IGBT component, and a second temperature sensor disposed on the second IGBT component, the first temperature sensor and the second temperature sensor are respectively connected to the over-temperature protection circuit, the over-temperature protection circuit is connected to the comparator, the first temperature sensor is configured to acquire a temperature of the first IGBT component, the second temperature sensor is configured to acquire a temperature of the second IGBT component, and the over-temperature protection circuit outputs an over-temperature protection signal to the comparator according to the temperature of the first IGBT component and the temperature of the second IGBT component.
According to one embodiment of the present invention, the over-temperature protection circuit includes: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, wherein the second signal input circuit module includes a first comparison chip, a first voltage division circuit and a second voltage division circuit, one end of the first voltage division circuit is connected with the first temperature sensor, the other end of the first voltage division circuit is connected with the negative input end of the first comparison chip, one end of the second voltage division circuit is connected with the second temperature sensor, the other end of the second voltage division circuit is connected with the positive input end of the first comparison chip, the output end of the first comparison chip is connected with the second signal comparison circuit module, the first voltage division circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, the smaller voltage value of the first voltage value and the second voltage value is used as a first input voltage value and is transmitted to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to a comparison result.
According to an embodiment of the present invention, the second signal input circuit module further includes a first analog switch disposed at the output end of the first comparing chip, and the first analog switch includes a first signal input end connected to the output end of the first comparing chip, a first signal output end connected to the second signal comparing circuit module, a first input end connected between the negative input end of the first comparing chip and the first voltage dividing circuit, and a second input end connected between the positive input end of the first comparing chip and the second voltage dividing circuit.
According to an embodiment of the present invention, the second signal comparison circuit module includes a second comparison chip and a first adjustment circuit, a positive input end of the second comparison chip is connected to the first adjustment circuit, a negative input end of the second comparison chip is connected to the first signal output end, an output end of the second comparison chip is connected to the second signal output circuit module, and the second comparison chip compares the first input voltage value with a preset over-temperature voltage value output by the first adjustment circuit and outputs a comparison result to the second signal output circuit module.
According to an embodiment of the present invention, the over-current protection unit includes an over-current protection circuit, a first hall current sensor disposed on the first IGBT component, and a second hall current sensor disposed on the second IGBT component, the first hall current sensor and the second hall current sensor are respectively connected to the over-current protection circuit, the over-current protection circuit is connected to the comparator, the first hall current sensor is configured to collect a current signal flowing through the first IGBT component in the IPM unit and automatically convert the current signal into a third voltage value, the second hall current sensor is configured to collect a current signal flowing through the second IGBT component in the IPM unit and automatically convert the current signal into a fourth voltage value, and the over-current protection circuit outputs an over-current protection signal to the comparator according to the third voltage value and the fourth voltage value.
According to an embodiment of the present invention, the overcurrent protection circuit includes: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module which are connected in sequence, the third signal input circuit module comprises a third comparison chip, the negative electrode input end of the third comparison chip is connected with the first Hall current sensor, the positive electrode input end of the third comparison chip is connected with the second Hall current sensor, the output end of the third comparison chip is connected with the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, and takes the larger voltage value of the third voltage value and the fourth voltage value as a second input voltage value, and transmits the second input voltage value to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.
According to an embodiment of the present invention, the third signal input circuit module further includes a second analog switch disposed at the output end of the third comparing chip, and the second analog switch includes a second signal input end connected to the output end of the third comparing chip, a second signal output end connected to the third signal comparing circuit module, a third input end connected to the negative input end of the third comparing chip, and a fourth input end connected to the positive input end of the third comparing chip.
According to an embodiment of the present invention, the third signal comparison circuit module includes a fourth comparison chip and a second adjustment circuit, a negative input terminal of the fourth comparison chip is connected to the second adjustment circuit, a positive input terminal of the fourth comparison chip is connected to the second signal output terminal, an output terminal of the fourth comparison chip is connected to the third signal output circuit module, and the fourth comparison chip compares the second input voltage value with the preset over-current voltage value output by the second adjustment circuit and outputs a comparison result to the third signal output circuit module.
On one hand, the IPM protection system adds a group of short circuit detection for the input pulse signals on the basis of the original short circuit detection for the IGBT assembly, and blocks the pulse signals from being transmitted continuously under the condition that wrong pulse signals are input, so that the pulse signals cannot be transmitted to the IPM unit, and the purpose of protecting the IGBT assembly is achieved; on the other hand, the comparator is adopted to process and judge the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal, and output a turn-off signal to the line driver, the line driver acts as a switch, and the first pulse signal and the second pulse signal are controlled to pass/block according to the level state of the turn-off signal.
Drawings
FIG. 1 is a schematic diagram of an IPM protection system for flywheel energy storage devices in accordance with the present invention.
Fig. 2 is a schematic structural diagram of the short-circuit protection circuit of the present invention.
FIG. 3 is a schematic diagram of an over-temperature protection circuit according to the present invention
FIG. 4 is a schematic diagram of the over-current protection circuit of the present invention
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In order to make the description of the present disclosure more complete and complete, the following description is given for illustrative purposes with respect to the embodiments and examples of the present invention; it is not intended to be the only form in which the embodiments of the invention may be practiced or utilized.
The embodiment of the invention discloses an IPM (intelligent power module) protection system for a flywheel energy storage device, which is suitable for a 200KW flywheel energy storage device on a 1500V subway rail.
FIG. 1 illustrates an IPM protection system for a flywheel energy storage device, referring to FIG. 1, comprising: a signal generation unit 20, an IPM unit 30, a short-circuit protection unit (not shown in the figure), an over-temperature protection unit (not shown in the figure), an over-current protection unit (not shown in the figure), a comparator 40, and a line driver 50. Referring to fig. 2, the signal generating unit 20 includes a first generating terminal 201 for generating and outputting a first pulse signal and a second generating terminal 202 for generating and outputting a second pulse signal, and the IPM unit 30 includes a first IGBT component (not shown) and a second IGBT component (not shown).
Further, referring to fig. 1, an input end of the short-circuit protection unit is connected to the IPM unit 30 and the signal generation unit 20, an output end of the short-circuit protection unit is connected to the comparator 40, and the short-circuit protection unit collects a gate-level voltage signal of the first IGBT component, a gate-level voltage signal of the second IGBT component, the first pulse signal, and the second pulse signal and outputs a short-circuit protection signal to the comparator 40.
The short-circuit protection unit of the embodiment adds a group of short-circuit detection for the input pulse signal on the basis of the original short-circuit detection for the IGBT component, and blocks the pulse signal from being continuously transmitted when an error pulse signal is input, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.
Further, referring to fig. 1, an input end of the over-temperature protection unit is connected to the IPM unit 30, an output end of the over-temperature protection unit is connected to the comparator 40, and the over-temperature protection unit collects the temperature of the first IGBT component and the temperature of the second IGBT component and outputs an over-temperature protection signal to the comparator 40.
The over-temperature protection unit of this embodiment blocks the pulse signal from being transmitted continuously when the temperature of the IGBT component is over-temperature, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.
Further, referring to fig. 1, an input end of the overcurrent protection unit is connected to the IPM unit 30, an output end of the overcurrent protection unit is connected to the comparator 40, and the overcurrent protection unit collects a current signal flowing through the first IGBT component in the IPM unit 30 and a current signal flowing through the second IGBT component in the IPM unit 30 and outputs an overcurrent protection signal to the comparator 40.
When the temperature of the IGBT component is over-current, the over-current protection unit of this embodiment blocks the pulse signal from being transmitted continuously, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.
Further, referring to fig. 1, the line driver 50 is respectively connected to the comparator 40, the IPM unit 30 and the signal generating unit 20, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are simultaneously in a low level state, the shutdown signal output by the comparator 40 is in a low level state, the line driver 50 controls the first pulse signal and the second pulse signal to pass through and transmit to the IPM unit 30, otherwise, the shutdown signal output by the comparator 40 is in a high level state, and the line driver 50 controls the first pulse signal and the second pulse signal to be blocked from transmitting to the IPM unit 30.
In the embodiment of the present invention, the comparator 40 is adopted to process and judge the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal, and output the turn-off signal to the line driver 50, and the line driver 50 functions as a switch to control the passing/blocking of the first pulse signal and the second pulse signal according to the level state of the turn-off signal. Compared with a system combining software and hardware, the IPM protection system provided by the embodiment of the invention reduces peripheral circuits required by the MCU controller, simplifies the system structure, simultaneously does not need software programming, reduces the task load and development difficulty of system development, improves the safety and accuracy of the system, and obviously improves the information processing efficiency.
On the basis of the above embodiment, the line driver 50 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the comparator 40, the input pin is connected to the signal generating unit and is used for inputting the first pulse signal and the second pulse signal, the output pin is connected to the IPM unit 30 and is used for outputting the first pulse signal and the second pulse signal to the IPM unit 30, and the comparator 40 outputs the shutdown signal according to the received short-circuit protection signal, the over-temperature protection signal and the over-current protection signal. The comparator 40 is a three-input or gate, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are in a low level state at the same time, the turn-off signal output by the comparator 40 is in a low level state, otherwise, the turn-off signal output by the comparator 40 is in a high level state; the first and second pulse signals are transferred to the IPM unit 30 through the enable pin when the off signal is in a low level state (the enable pin is in a low level), and the enable pin blocks the first and second pulse signals from being transferred to the IPM unit 30 when the off signal is in a high level state (the enable pin is in a high level).
According to an embodiment of the present invention, referring to fig. 2, the short-circuit protection unit includes a short-circuit protection circuit 60, two first voltage sensors (not shown) disposed on the first IGBT component, and two second voltage sensors (not shown) disposed on the second IGBT component, and the first voltage sensors and the second voltage sensors are respectively connected to the short-circuit protection circuit 60. The gate-level voltage signal of the first IGBT component comprises an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, and the gate-level voltage signal of the second IGBT component comprises an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component. The first IGBT assembly comprises an upper bridge arm and a lower bridge arm, and the two first voltage sensors are respectively used for acquiring an upper gate-level voltage signal (namely, a gate-level voltage signal of the upper bridge arm) of the first IGBT assembly and a lower gate-level voltage signal (namely, a gate-level voltage signal of the lower bridge arm) of the first IGBT assembly; the second IGBT assembly comprises an upper bridge arm and a lower bridge arm, and the two second voltage sensors are respectively used for acquiring an upper gate-level voltage signal (namely the gate-level voltage signal of the upper bridge arm) of the second IGBT assembly and a lower gate-level voltage signal (namely the gate-level voltage signal of the lower bridge arm) of the second IGBT assembly. In this embodiment, the first IGBT component and the second IGBT component may operate separately or simultaneously.
In this embodiment, referring to fig. 2, the short-circuit protection circuit includes: a first signal input circuit module 601, a first signal comparison circuit module 602 and a first signal output circuit module 603, which are connected in sequence, wherein the first signal comparison circuit module 602 comprises a first and gate logic gate chip 6020, a second and gate logic gate chip 6021, a third and gate logic gate chip 6022 and an or gate logic gate chip 6023, the input end of the or gate logic gate chip 6023 is respectively connected with the output end of the first and gate chip 6020, the output end of the second and gate chip 6021 and the output end of the third and gate chip 6022, the output terminal of the or gate logic gate chip 6023 is connected to the first signal output circuit module 603, the first and gate logic gate chip 6020 is grounded and connected to the reference voltage generator, the second and gate logic gate chip 6021 is grounded and connected to the reference voltage generator, the third and gate logic gate chip 6022 is grounded and connected to the reference voltage generator, or the or gate logic gate chip 6023 is grounded and connected to the reference voltage generator. The first and gate chip 6020 outputs a first level signal according to the first pulse signal and the second pulse signal, and when the first pulse signal and the second pulse signal are simultaneously at a high level, the first level signal output by the first and gate chip 6020 is at a high level, otherwise, the first level signal output by the first and gate chip 6020 is at a low level. The second and gate logic gate chip 6021 outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, when the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component are simultaneously at a high level, the second level signal output by the second and gate logic gate chip 6021 is at a high level, otherwise, the second level signal output by the second and gate logic gate chip 6021 is at a low level. The third and gate logic gate chip 6022 outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, when the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component are simultaneously at a high level, the third level signal output by the third and gate logic gate chip 6022 is at a high level, otherwise, the third level signal output by the third and gate logic gate chip 6022 is at a low level. The or gate logic gate chip 6023 outputs a fourth level signal to the first signal output circuit module 603 according to the first level signal, the second level signal and the third level signal, when only one of the first level signal, the second level signal and the third level signal is a high level, the fourth level signal output by the or gate logic gate chip 6023 is a high level, otherwise, the fourth level signal output by the or gate logic gate chip 6023 is a low level, and the first signal output circuit module 603 outputs a short-circuit protection signal to the comparator 40 according to the fourth level signal.
Further, referring to fig. 2, the first signal output circuit module 603 includes two first not chips 6030 connected in series in sequence. The first not-gate chip 6030 is configured to enhance the fourth level signal and stabilize the fourth level signal, when the fourth level signal is at a low level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a low level and indicates that the signal is normal; when the fourth level signal is at a high level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a high level, which indicates that the signal is abnormal.
Further, referring to fig. 2, the first signal input circuit module 601 includes a first resistor 1 and a second resistor 2, where the first resistor 1 is connected in series with the input terminal of the first and logic gate chip 6020 and the first generation terminal 201, respectively, and the second resistor 2 is connected in series with the input terminal of the first and logic gate chip 6020 and the second generation terminal 202, respectively.
Further, referring to fig. 2, the first signal input circuit module 601 includes a third resistor 3 and a fourth resistor 4, where the third resistor 3 is respectively connected in series with the input terminal of the second and logic gate chip 6021 and one of the first voltage sensors, and the fourth resistor 4 is respectively connected in series with the input terminal of the second and logic gate chip 6021 and the other of the first voltage sensors.
Further, referring to fig. 2, the first signal input circuit module 601 includes a fifth resistor 5 and a sixth resistor 6, the fifth resistor 5 is respectively connected in series with the input terminal of the third and logic gate chip 6022 and one of the second voltage sensors, and the sixth resistor 6 is respectively connected in series with the input terminal of the third and logic gate chip 6022 and the other of the second voltage sensors.
According to an embodiment of the present invention, referring to fig. 3, the over-temperature protection unit includes an over-temperature protection circuit 70, a first temperature sensor 301 disposed on the first IGBT component, and a second temperature sensor 302 disposed on the second IGBT component, the first temperature sensor 301 and the second temperature sensor 302 are respectively connected to the over-temperature protection circuit 70, the over-temperature protection circuit 70 is connected to the comparator 40, the first temperature sensor 301 is configured to acquire a temperature of the first IGBT component, the second temperature sensor 302 is configured to acquire a temperature of the second IGBT component, and the over-temperature protection circuit 70 outputs an over-temperature protection signal to the comparator 40 according to the temperature of the first IGBT component and the temperature of the second IGBT component.
Further, referring to fig. 3, the over-temperature protection circuit 70 includes: a second signal input circuit module 701, a second signal comparison circuit module 702 and a second signal output circuit module 703 connected in sequence, wherein the second signal input circuit module 701 includes a first comparison chip 7010, a first voltage division circuit 7011 and a second voltage division circuit 7012, the first comparison chip 7010 is connected to ground and to a reference voltage generator, one end of the first voltage division circuit 7011 is connected to the first temperature sensor 301, the other end of the first voltage division circuit 7011 is connected to a negative input terminal of the first comparison chip 7010, one end of the second voltage division circuit 7012 is connected to the second temperature sensor 302, the other end of the second voltage division circuit 7012 is connected to a positive input terminal of the first comparison chip 7010, an output terminal of the first comparison chip 7010 is connected to the second signal comparison circuit module 703, the first voltage division circuit 7011 outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit 7012 outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip 7010 collects and compares the first voltage value and the second voltage value, and transmits a smaller voltage value of the first voltage value and the second voltage value as a first input voltage value to the second signal comparison circuit module 702; the second signal comparing circuit module 702 compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module 703 outputs an over-temperature protection signal to the comparator 40 according to the comparison result of the second signal comparing circuit module 702.
In the present embodiment, by directly detecting the temperature of the IGBT component, which is equivalent to detecting the temperature of the IPM unit 10, the first temperature sensor 301 and the second temperature sensor 302 are equivalent to thermistors, the voltage value at TP1 is a first voltage value, the voltage value at TP2 is a second voltage value, when the temperature of the first IGBT component increases, the resistance value of the first temperature sensor 301 decreases, and the voltage value at TP1 decreases as the resistance value of the first temperature sensor 301 decreases, that is, the voltage value of TP1 is in inverse proportion to the temperature of the first IGBT component; when the temperature of the second IGBT component increases, the resistance value of the second temperature sensor 302 decreases, and the voltage value at TP2 decreases as the resistance value of the second temperature sensor 302 decreases, i.e., the voltage value of TP2 is inversely proportional to the temperature of the second IGBT component.
Further, referring to fig. 3, the second signal input circuit module 701 further includes a first analog switch 7013 disposed at the output end of the first comparing chip 7010, where the first analog switch 7013 includes a first signal input end (i.e., Vin end) connected to the output end of the first comparing chip 7010, a first signal output end (i.e., OUT end) connected to the second signal comparing circuit module 702, a first input end (i.e., NO end) connected between the negative input end of the first comparing chip 7010 and the first voltage dividing circuit 7011, and a second input end (i.e., NC end) connected between the positive input end of the first comparing chip 7010 and the second voltage dividing circuit 7012. The second analog switch 7013 further includes a ground terminal (i.e., GND terminal) and a power terminal (i.e., Vcc terminal) connected to the reference voltage generator.
In this embodiment, when the first voltage value is greater than the second voltage value, the first comparing chip 7010 outputs a low level to the first analog switch 7013, and when the first signal input terminal is in a low level state, the first signal output terminal is connected to the second input terminal, and the second voltage value is transmitted to the second signal comparing circuit module 702 as the first input voltage value; when the first voltage value is smaller than the second voltage value, the first comparing chip 7010 outputs a high level to the first analog switch 7013, and when the first signal input terminal is in a high level state, the first signal output terminal is connected to the first input terminal, and the first voltage value is transmitted to the second signal comparing circuit module 702 as the first input voltage value.
Further, referring to fig. 3, the first voltage dividing circuit 7011 includes a seventh resistor 7 and an eighth resistor 8, one end of the seventh resistor 7, one end of the eighth resistor 8 and the negative input end of the first comparing chip 7010 are interconnected, the other end of the seventh resistor 7 is connected to the first temperature sensor 301, and the other end of the eighth resistor 8 is connected to the reference voltage generator.
Further, referring to fig. 3, the second voltage-dividing circuit 7012 includes a ninth resistor 9 and a tenth resistor 10, one end of the ninth resistor 9, one end of the tenth resistor 10, and the positive input end of the first comparing chip 7010 are interconnected, the other end of the ninth resistor 9 is connected to the second temperature sensor 302, and the other end of the tenth resistor 10 is connected to the reference voltage generator.
Further, referring to fig. 3, the second signal comparison circuit module 702 includes a second comparison chip 7020 and a first adjustment circuit 7021, the second comparison chip 7020 is grounded and connected to the reference voltage generator, an anode input terminal of the second comparison chip 7020 is connected to the first adjustment circuit 7021, a cathode input terminal of the second comparison chip 7020 is connected to the first signal output terminal, an output terminal of the second comparison chip 7020 is connected to the second signal output circuit module 703, the second comparison chip 7020 compares the first input voltage value with the preset over-temperature voltage value output by the first adjustment circuit 7021, and outputs a comparison result to the second signal output circuit module 703. When the first input voltage value is greater than or equal to the preset over-temperature voltage value, the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, and when the first input voltage value is less than the preset over-temperature voltage value, the second comparison chip 7020 outputs a high level to the second signal output circuit module 703.
Further, referring to fig. 3, the first adjusting circuit 7021 includes an eleventh resistor 11 and a twelfth resistor 12, an anode input terminal of the second comparing chip 7020 is interconnected with one end of the eleventh resistor 11 and one end of the twelfth resistor 12, the other end of the eleventh resistor 11 is grounded, and the other end of the twelfth resistor 12 is connected to the reference voltage generator. The first adjusting circuit 7021 adjusts the output voltage (the voltage value at TP 3) of the first adjusting circuit 7021 to a voltage value corresponding to an over-temperature condition (i.e., a preset over-temperature voltage value) by adjusting the eleventh resistor 11 and the twelfth resistor 12.
Further, referring to fig. 3, the second signal output circuit module 703 includes two second not chips 7030 connected in series in sequence. The second not-gate chip 7030 is configured to enhance and stabilize a level signal, when the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is a low level after enhancement and stabilization, which indicates that the signal is normal, and when the second comparison chip 7020 outputs a high level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is a high level after enhancement and stabilization, which indicates that the signal is abnormal.
According to an embodiment of the present invention, referring to fig. 4, the overcurrent protection unit includes an overcurrent protection circuit 80, a first hall current sensor 303 disposed on the first IGBT component, and a second hall current sensor 304 disposed on the second IGBT component, the first hall current sensor 303 and the second hall current sensor 304 are respectively connected to the overcurrent protection circuit 80, the overcurrent protection circuit 80 is connected to the comparator 40, the first hall current sensor 303 is configured to collect a current signal flowing through the first IGBT component in the IPM unit and automatically convert the current signal into a third voltage value, the second hall current sensor 304 is configured to collect a current signal flowing through the second IGBT component in the IPM unit and automatically convert the current signal into a fourth voltage value, and the overcurrent protection circuit 80 outputs an overcurrent protection signal to the comparator 40 according to the third voltage value and the fourth voltage value.
Further, referring to fig. 4, the over-current protection circuit 80 includes: a third signal input circuit module 801, a third signal comparison circuit module 802 and a third signal output circuit module 803 which are connected in sequence, wherein the third signal input circuit module 801 comprises a third comparison chip 8010, a negative electrode input end of the third comparison chip 8010 is connected with the first hall current sensor 303, a positive electrode input end of the third comparison chip 8010 is connected with the second hall current sensor 304, an output end of the third comparison chip 8010 is connected with the third signal comparison circuit module 802, the third comparison chip 8010 collects and compares a third voltage value and a fourth voltage value, and a larger voltage value of the third voltage value and the fourth voltage value is used as a second input voltage value and is transmitted to the third signal comparison circuit module 802; the third signal comparing circuit module 802 compares the second input voltage value with a preset over-current voltage value, and the third signal output circuit module 803 outputs an over-current protection signal to the comparator 40 according to the comparison result of the third signal comparing circuit module 802.
In the present embodiment, the first hall current sensor 303 converts the current signal flowing through the first IGBT component in the IPM unit 30 into a third voltage value in a certain proportion, the second hall current sensor 304 converts the current signal flowing through the second IGBT component in the IPM unit 30 into a fourth voltage value in a certain proportion, the voltage value at TP4 is the third voltage value, the voltage value at TP5 is the fourth voltage value, the voltage value at TP4 and the voltage value at TP5 increase with increasing current, the voltage value at TP4 is in a direct proportional relationship with the current value, and the voltage value at TP5 is in a direct proportional relationship with the current value.
Further, referring to fig. 4, the third signal input circuit block 801 further includes a second analog switch 8011 disposed at the output terminal of the third comparing chip 8010, and the second analog switch 8011 includes a second signal input terminal (i.e., Vin terminal) connected to the output terminal of the third comparing chip 8010, a second signal output terminal (i.e., OUT terminal) connected to the third signal comparing circuit block 802, a third input terminal (i.e., NC terminal) connected to the negative input terminal of the third comparing chip 8010, and a fourth input terminal (i.e., NO terminal) connected to the positive input terminal of the third comparing chip 8010. The second analog switch 8011 further includes a ground terminal (i.e., GND terminal) and a power source terminal (i.e., Vcc terminal) connected to the reference voltage generator.
In this embodiment, when the third voltage value is greater than the fourth voltage value, the third comparing chip 8010 outputs a low level to the second analog switch 8011, and when the second signal input terminal is in a low level state, the second signal output terminal is connected to the third input terminal, and the third voltage value is transmitted to the third signal comparing circuit module 802 as the second input voltage value; when the third voltage value is smaller than the fourth voltage value, the third comparing chip 8010 outputs a high level to the second analog switch 8011, and when the second signal input terminal is in a high level state, the second signal output terminal is connected to the fourth input terminal, and the fourth voltage value is transmitted to the third signal comparing circuit module 802 as the second input voltage value.
Further, referring to fig. 4, the third signal comparing circuit module 802 includes a fourth comparing chip 8020 and a second adjusting circuit 8021, the fourth comparing chip 8020 is grounded and connected to the reference voltage generator, a negative input end of the fourth comparing chip 8020 is connected to the second adjusting circuit 8021, a positive input end of the fourth comparing chip 8020 is connected to the second signal output end, an output end of the fourth comparing chip 8020 is connected to the third signal output circuit module 803, the fourth comparing chip 8020 compares the second input voltage value with the preset overcurrent voltage value output by the second adjusting circuit 8021, and outputs the comparison result to the third signal output circuit module 803. When the second input voltage value is greater than or equal to the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803, and when the second input voltage value is less than the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803.
Further, referring to fig. 4, the second adjusting circuit 8021 includes a thirteenth resistor 13 and a fourteenth resistor 14, a negative input terminal of the fourth comparing chip 8020 is interconnected with one end of the thirteenth resistor 13 and one end of the fourteenth resistor 14, the other end of the thirteenth resistor 13 is grounded, and the other end of the fourteenth resistor 14 is connected to the reference voltage generator. The second adjusting circuit 8021 adjusts the voltage value at TP6 to a voltage value corresponding to the overcurrent, that is, a preset overcurrent voltage value, by adjusting the thirteenth resistor 13 and the fourteenth resistor 14.
Further, referring to fig. 4, the third signal comparing circuit module 802 further includes a fifteenth resistor 15, one end of the fifteenth resistor 15 is connected between the negative input terminal of the fourth comparing chip 8020 and the second adjusting circuit 8012, and the other end of the fifteenth resistor 15 is connected to the output terminal of the fourth comparing chip 8020. The fifteenth resistor 15 is used to amplify the comparison result output by the fourth comparing chip 8020.
Further, referring to fig. 4, the third signal output circuit module 803 includes two third not chips 8030 connected in series in sequence. The third not gate chip 8030 is configured to enhance and stabilize a level signal, when the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized low level, which indicates that the signal is normal, and when the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized high level, which indicates that the signal is abnormal.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (12)
1. An IPM protection system for a flywheel energy storage device, the IPM protection system comprising: the system comprises a signal generating unit, an IPM unit, a short-circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver;
the signal generating unit is used for generating and outputting a first pulse signal and a second pulse signal, and a first IGBT assembly and a second IGBT assembly are arranged in the IPM unit;
the input end of the short-circuit protection unit is respectively connected with the IPM unit and the signal generation unit, the output end of the short-circuit protection unit is connected with the comparator, and the short-circuit protection unit collects a gate-level voltage signal of the first IGBT assembly, a gate-level voltage signal of the second IGBT assembly, the first pulse signal and the second pulse signal and outputs a short-circuit protection signal to the comparator;
the input end of the over-temperature protection unit is connected with the IPM unit, the output end of the over-temperature protection unit is connected with the comparator, and the over-temperature protection unit acquires the temperature of the first IGBT assembly and the temperature of the second IGBT assembly and outputs an over-temperature protection signal to the comparator;
the input end of the over-current protection unit is connected with the IPM unit, the output end of the over-current protection unit is connected with the comparator, and the over-current protection unit collects a current signal flowing through the first IGBT assembly in the IPM unit and a current signal flowing through the second IGBT assembly in the IPM unit and outputs an over-current protection signal to the comparator;
the circuit driver is respectively connected with the comparator, the IPM unit and the signal generating unit, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are simultaneously in a low level state, a turn-off signal output by the comparator is in a low level state, the circuit driver controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit, otherwise, the turn-off signal output by the comparator is in a high level state, and the circuit driver controls the first pulse signal and the second pulse signal to be blocked from being transmitted to the IPM unit.
2. The IPM protection system of claim 1, wherein the line driver includes a signal input pin, an enable pin, and a signal output pin, the enable pin is connected to the comparator, the input pin is connected to the signal generation unit, the output pin is connected to the IPM unit, the first and second pulse signals are transmitted to the IPM unit through the enable pin when the shutdown signal is in a low level state, and the enable pin blocks the transmission of the first and second pulse signals to the IPM unit when the shutdown signal is in a high level state.
3. The IPM protection system of claim 2, wherein the short circuit protection unit comprises a short circuit protection circuit, two first voltage sensors disposed on the first IGBT assembly and two second voltage sensors disposed on the second IGBT assembly, the first voltage sensor and the second voltage sensor are respectively connected to the short circuit protection circuit, the gate voltage signal of the first IGBT assembly comprises an upper gate voltage signal of the first IGBT assembly and a lower gate voltage signal of the first IGBT assembly, the gate voltage signal of the second IGBT assembly comprises an upper gate voltage signal of the second IGBT assembly and a lower gate voltage signal of the second IGBT assembly, the two first voltage sensors are respectively used for collecting the upper gate voltage signal of the first IGBT assembly and the lower gate voltage signal of the first IGBT assembly, and the two second voltage sensors are respectively used for collecting the upper gate voltage signal of the second IGBT assembly and the second gate voltage signal of the second IGBT assembly And lower gate voltage signals of the two IGBT components.
4. The IPM protection system of claim 3, wherein the short circuit protection circuit comprises: the first signal input circuit module, the first signal comparison circuit module and the first signal output circuit module are connected in sequence, the first signal input circuit module is respectively connected with the first voltage sensor, the second voltage sensor and the signal generation unit, and the first signal output module is connected with the comparator; the first signal comparison circuit module comprises a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, wherein the input end of the OR gate logic gate chip is respectively connected with the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, the output end of the OR gate logic gate chip is connected with the first signal output circuit module, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, and the third AND gate logic gate chip outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; and the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.
5. The IPM protection system of claim 2, wherein the over-temperature protection unit includes an over-temperature protection circuit, a first temperature sensor disposed on the first IGBT component, and a second temperature sensor disposed on the second IGBT component, the first temperature sensor and the second temperature sensor are respectively connected to the over-temperature protection circuit, the over-temperature protection circuit is connected to the comparator, the first temperature sensor is configured to acquire a temperature of the first IGBT component, the second temperature sensor is configured to acquire a temperature of the second IGBT component, and the over-temperature protection circuit outputs an over-temperature protection signal to the comparator according to the temperature of the first IGBT component and the temperature of the second IGBT component.
6. The IPM protection system of claim 5, wherein the over-temperature protection circuit comprises: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, wherein the second signal input circuit module includes a first comparison chip, a first voltage division circuit and a second voltage division circuit, one end of the first voltage division circuit is connected with the first temperature sensor, the other end of the first voltage division circuit is connected with the negative input end of the first comparison chip, one end of the second voltage division circuit is connected with the second temperature sensor, the other end of the second voltage division circuit is connected with the positive input end of the first comparison chip, the output end of the first comparison chip is connected with the second signal comparison circuit module, the first voltage division circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, the smaller voltage value of the first voltage value and the second voltage value is used as a first input voltage value and is transmitted to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to a comparison result.
7. The IPM protection system of claim 6, wherein the second signal input circuit module further includes a first analog switch disposed at an output terminal of the first comparison chip, the first analog switch includes a first signal input terminal connected to the output terminal of the first comparison chip, a first signal output terminal connected to the second signal comparison circuit module, a first input terminal connected between a negative input terminal of the first comparison chip and the first voltage divider circuit, and a second input terminal connected between a positive input terminal of the first comparison chip and the second voltage divider circuit.
8. The IPM protection system of claim 7, wherein the second signal comparison circuit module includes a second comparison chip and a first adjusting circuit, a positive input terminal of the second comparison chip is connected to the first adjusting circuit, a negative input terminal of the second comparison chip is connected to the first signal output terminal, an output terminal of the second comparison chip is connected to the second signal output circuit module, and the second comparison chip compares the first input voltage value with a preset over-temperature voltage value output by the first adjusting circuit and outputs a comparison result to the second signal output circuit module.
9. The IPM protection system of claim 2, wherein the over-current protection unit comprises an over-current protection circuit, a first Hall current sensor disposed on the first IGBT assembly, and a second Hall current sensor disposed on the second IGBT assembly, the first Hall current sensor and the second Hall current sensor are respectively connected with an overcurrent protection circuit, the over-current protection circuit is connected with the comparator, the first Hall current sensor is used for collecting a current signal flowing through the first IGBT component in the IPM unit and automatically converting the current signal into a third voltage value, the second Hall current sensor is used for collecting a current signal flowing through the second IGBT component in the IPM unit and automatically converting the current signal into a fourth voltage value, and the overcurrent protection circuit outputs an overcurrent protection signal to the comparator according to the third voltage value and the fourth voltage value.
10. The IPM protection system of claim 9, wherein the overcurrent protection circuit comprises: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module which are connected in sequence, the third signal input circuit module comprises a third comparison chip, the negative electrode input end of the third comparison chip is connected with the first Hall current sensor, the positive electrode input end of the third comparison chip is connected with the second Hall current sensor, the output end of the third comparison chip is connected with the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, and takes the larger voltage value of the third voltage value and the fourth voltage value as a second input voltage value, and transmits the second input voltage value to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.
11. The IPM protection system of claim 10, wherein the third signal input circuit module further includes a second analog switch disposed at the output terminal of the third comparison chip, the second analog switch includes a second signal input terminal connected to the output terminal of the third comparison chip, a second signal output terminal connected to the third signal comparison circuit module, a third input terminal connected to the negative input terminal of the third comparison chip, and a fourth input terminal connected to the positive input terminal of the third comparison chip.
12. The IPM protection system of claim 11, wherein the third signal comparing circuit module includes a fourth comparing chip and a second adjusting circuit, a negative input terminal of the fourth comparing chip is connected to the second adjusting circuit, a positive input terminal of the fourth comparing chip is connected to the second signal output terminal, an output terminal of the fourth comparing chip is connected to the third signal output circuit module, and the fourth comparing chip compares the second input voltage value with a preset over-current voltage value output by the second adjusting circuit and outputs a comparison result to the third signal output circuit module.
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| CN201910851096.5A CN110611298A (en) | 2019-09-10 | 2019-09-10 | IPM protection system for flywheel energy storage device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112104303A (en) * | 2020-09-14 | 2020-12-18 | 珠海格力电器股份有限公司 | Fault detection method of control circuit, motor controller and servo control system |
| CN112583295A (en) * | 2020-12-15 | 2021-03-30 | 中国工程物理研究院激光聚变研究中心 | High repetition frequency and high voltage nanosecond pulse driving power supply system and operation method |
| CN116093888A (en) * | 2023-04-08 | 2023-05-09 | 辰星（天津）自动化设备有限公司 | Industrial robot power module protection system |
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2019
- 2019-09-10 CN CN201910851096.5A patent/CN110611298A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112104303A (en) * | 2020-09-14 | 2020-12-18 | 珠海格力电器股份有限公司 | Fault detection method of control circuit, motor controller and servo control system |
| CN112583295A (en) * | 2020-12-15 | 2021-03-30 | 中国工程物理研究院激光聚变研究中心 | High repetition frequency and high voltage nanosecond pulse driving power supply system and operation method |
| CN116093888A (en) * | 2023-04-08 | 2023-05-09 | 辰星（天津）自动化设备有限公司 | Industrial robot power module protection system |
| CN116093888B (en) * | 2023-04-08 | 2023-08-18 | 辰星（天津）自动化设备有限公司 | Industrial robot power module protection system |
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