WO2015092522A1 - Drive control apparatus for semiconductor device - Google Patents

Drive control apparatus for semiconductor device Download PDF

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Publication number
WO2015092522A1
WO2015092522A1 PCT/IB2014/002798 IB2014002798W WO2015092522A1 WO 2015092522 A1 WO2015092522 A1 WO 2015092522A1 IB 2014002798 W IB2014002798 W IB 2014002798W WO 2015092522 A1 WO2015092522 A1 WO 2015092522A1
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WO
WIPO (PCT)
Prior art keywords
terminal
output
diode
input
comparator
Prior art date
Application number
PCT/IB2014/002798
Other languages
French (fr)
Inventor
Yuki Yamamoto
Hideo Yamawaki
Masaki Wasekura
Original Assignee
Toyota Jidosha Kabushiki Kaisha
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Publication date
Application filed by Toyota Jidosha Kabushiki Kaisha filed Critical Toyota Jidosha Kabushiki Kaisha
Publication of WO2015092522A1 publication Critical patent/WO2015092522A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/133—Modifications for switching at zero crossing in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Definitions

  • the invention relates to a drive control apparatus for a semiconductor device in which a transistor and a diode are connected inversely parallel to each other.
  • a semiconductor device described in this Japanese Patent Application Publication No. 2012-019550 has a sense diode for detecting a current flowing through a main diode, and a sense resistor.
  • This sense diode has a cathode terminal that is employed in common with a cathode terminal of the main diode, and an anode terminal that is connected to one end of the sense resistor. The other end of the sense resistor is connected to an anode terminal of the main diode.
  • a drive control apparatus for the aforementioned semiconductor device detects a potential difference that is generated at both ends of the sense resistor when a gate signal of a transistor is at high level, and determines, based on the potential difference, whether or not a current flows through the main diode, namely, whether or not the main diode is energized. Then, when it is determined that the main diode is energized, the drive control apparatus turns off the transistor.
  • the sense resistor is interposed between the anode terminal of the main diode and the anode terminal of the sense diode, so the ON voltage of the main diode and the ON voltage of the sense diode are different from each other. Therefore, with a determination method as described in the aforementioned Japanese Patent Application Publication No.
  • the magnitude of the current flowing through the main diode and the magnitude of the current flowing through the sense diode are not proportional to each other, and the potential difference at both the ends of the sense resistor does not appropriately represent the magnitude of the current flowing through the main diode. Therefore, the accuracy in determining whether or not the main diode is energized deteriorates.
  • the invention provides a drive control apparatus for a semiconductor device that can enhance the accuracy in determining whether or not a main diode is energized.
  • a drive control apparatus for a semiconductor device includes a transistor, a main diode, a sense diode, an operational amplifier, and a first comparator.
  • the transistor is configured to conduct a switching operation by a gate signal that is input to a gate terminal of the transistor.
  • the main diode is connected inversely parallel to the transistor.
  • the sense diode has a cathode terminal that is connected to a cathode terminal of the main diode.
  • the operational amplifier has an inverted input terminal that is connected to an anode terminal of the sense diode, a non-inverted input terminal that is connected to an anode terminal of the main diode, and an output terminal that is connected to the anode terminal of the sense diode via a sense resistor.
  • the first comparator is configured to output a signal indicating whether or not the main diode is energized, by comparing an output voltage generated at the output terminal of the operational amplifier with a first threshold voltage.
  • the accuracy in determining whether or not the main diode is energized can be enhanced.
  • FIG. 1 is a block diagram of a drive control apparatus for a semiconductor device according to the embodiment of the invention
  • FIG. 2 shows operation time charts in the drive control apparatus according to the present embodiment of the invention.
  • FIG. 3 is a block diagram of a drive control apparatus for a semiconductor device according to a modification example of the invention.
  • FIG. 1 is a block diagram showing a drive control apparatus 20 for a semiconductor device 10 according to one embodiment of the invention.
  • the semiconductor device 10 according to the present embodiment of the invention is, for example, an electric power conversion device such as an inverter module or the like, which is mounted on an electric vehicle or a hybrid vehicle to carry out voltage conversion between a three-phase motor and a direct-current electric power supply such as a battery or the like.
  • the three-phase motor serves as a drive source that is an electric load.
  • the semiconductor device 10 is equipped with a power switching element 12.
  • the power switching element 12 is, for example, an element that constitutes upper and lower arms corresponding to the aforementioned three-phase motor.
  • the power switching element 12 is a reverse conducting insulated gate bipolar transistor (IGBT) or a diode-built-in IGBT, which is, for example, a power transistor.
  • the power switching element 12 has an IGBT 14 and a diode 16. This IGBT 14 and this diode 16 are formed on the same semiconductor substrate.
  • the power switching element 12 may have a switching element such as a metal-oxide-semiconductor field-effect transistor (a MOSFET) or the like, instead of the IGBT 14.
  • a MOSFET metal-oxide-semiconductor field-effect transistor
  • the IGBT 14 is a switching element that is driven to be switched on and off in order to carry out voltage conversion as described above.
  • a collector terminal of the IGBT 14 is connected to a load, an electric power supply or the like. Besides, an emitter terminal of the IGBT 14 is grounded.
  • the IGBT 14 is turned on, a current flows between the collector terminal of the IGBT 14 and the emitter terminal of the IGBT 14, and a current flows through the load or the like in a predetermined direction.
  • the diode 16 is an antiparallel diode that commutates a load current flowing through the power switching element 12.
  • the diode 16 has a mainly employed diode (hereinafter referred to as a main diode) 16a that is connected in parallel between the collector terminal of the IGBT 14 and the emitter terminal of the IGBT 14.
  • the main diode 16a is configured such that an anode terminal thereof is connected to the emitter terminal of the IGBT 14, and that a cathode terminal thereof is connected to the collector terminal of the IGBT 14.
  • the main diode 16a allows a current to flow reversely to the flow of the current in the IGBT 14, namely, allows a current (a forward current) to flow from the emitter terminal side of the IGBT 14 to the collector terminal side of the IGBT 14.
  • the IGBT 14 and the main diode 16a of the diode 16 are connected inversely parallel to each other.
  • Isw the current flowing through the power switching element 12
  • the direction of a current Isw from the collector terminal side of the IGBT 14 to the emitter terminal side of the IGBT 14 is assumed to be a positive side
  • the direction of the current Isw from the emitter terminal side of the IGBT 14 to the collector terminal side of the IGBT 14 is assumed to be a negative side.
  • the diode 16 has a diode for detecting a current (hereinafter referred to as a sense diode) 16b that is provided to detect a forward current flowing through the main diode 16a.
  • the main diode 16a and the sense diode 16b are formed with an identical structure on the same semiconductor substrate.
  • a cathode terminal of the main diode 16a and a cathode terminal of the sense diode 16b are connected to the collector terminal of the IGBT 14.
  • the drive control apparatus 20 is an electronic control unit that controls the turning on and off of the power switching element 12 (concretely, the IGBT 14).
  • the drive control apparatus 20 is mainly constituted by a microcomputer (not shown), and is equipped with an AND circuit 22, a gate drive circuit 24, a sense resistor 26, an operational amplifier 28, and a comparator 30.
  • the microcomputer of the drive control apparatus 20 performs a process of outputting a drive command signal s in accordance with a predetermined condition. Concretely, the microcomputer generates and outputs the high-level drive command signal s at a timing when the IGBT 14 should be turned on, and generates and outputs the low-level drive command signal s at a timing when the IGBT 14 should be turned off.
  • the aforementioned microcomputer is connected to an input terminal of the AND circuit 22, and an output terminal of the comparator 30 is connected to the input terminal of the AND circuit 22.
  • the drive command signal s from the microcomputer is input to the AND circuit 22, and an output signal coutl of the comparator 30 is input to the AND circuit 22.
  • the AND circuit 22 is a logic circuit that outputs a high-level signal when all input signals are at high level.
  • An input terminal of the gate drive circuit 24 is connected to an output terminal of the AND circuit 22.
  • An output signal of the AND circuit 22 is input to the gate drive circuit 24.
  • the gate drive circuit 24 is a circuit that generates a gate voltage to be applied to a gate terminal of the IGBT 14 of the power switching element 12, in accordance with the output signal of the AND circuit 22 input to the gate drive circuit 24, and that outputs the generated gate voltage as a gate signal gin.
  • the gate terminal of the IGBT 14 is connected to an output terminal of the gate drive circuit 24.
  • the IGBT 14 is turned on and off in accordance with the gate signal gin that is supplied from the gate drive circuit 24.
  • An anode terminal of the aforementioned sense diode 16b is connected to one end of the sense resistor 26, and is connected to an inverted input terminal of the operational amplifier 28.
  • an anode terminal of the aforementioned main diode 16a is connected to a non-inverted input terminal of the operational amplifier 28.
  • the other end of the sense resistor 26 is connected to an output terminal (a point A) of the operational amplifier 28.
  • the operational amplifier 28 is configured such that the inverted input terminal thereof is connected to the anode terminal of the sense diode 16b and one end of the sense resistor 26, that the non-inverted input terminal thereof is connected to the anode terminal of the main diode 16a (i.e., the emitter terminal of the IGBT 14), and that the output terminal thereof is connected to the other end of the sense resistor 26 (i.e., to the anode terminal of the sense diode 16b via the sense resistor 26).
  • the operational amplifier 28 operates such that the voltages input to two input terminals, namely, the inverted input terminal and the non-inverted input terminal coincide with each other.
  • the other end of the sense resistor 26, namely, an output terminal of the operational amplifier 28 is connected to an inverted input terminal of the comparator 30.
  • An output voltage (a point A voltage) VA that is generated at the output terminal of the operational amplifier 28 is input to the inverted input terminal of the comparator 30.
  • a reference voltage VI is input to a non-inverted input terminal of the comparator 30.
  • the aforementioned reference voltage VI is a threshold voltage for determining whether or not a forward current flows through the main diode 16a from the anode terminal side to the cathode terminal side.
  • the reference voltage VI is a potential difference that is generated at both the ends of the sense resistor 26 when a predetermined current flows through the sense resistor 26 from the output terminal side of the operational amplifier 28 toward the anode terminal side of the sense diode 16b, and is set approximately equal to zero or to a positive value extremely close to zero.
  • the comparator 30 is a comparator that operates in such a manner as to compare the point A voltage VA with the reference voltage VI, and that outputs a signal corresponding to a result of the comparison.
  • the comparator 30 outputs the low-level signal coutl indicating that the main diode 16a is energized, when the point A voltage VA exceeds the reference voltage VI (i.e., when there is established a relationship: VA > VI).
  • the comparator 30 outputs the high-level signal coutl indicating that the main diode 16a is not energized, when the point A voltage VA is equal to or lower than the reference voltage VI (i.e., when there is established a relationship: VA ⁇ VI).
  • the drive control apparatus 20 carries out electric power conversion between a direct-current voltage on the direct-current electric power supply side and an alternating-current voltage on the three-phase motor side by offsetting the phases of three-phase upper and lower arms by 120° while alternately turning on and off the IGBT 14 as the upper arm and the IGBT 14 as the lower arm, which constitute an inverter module as the semiconductor device 10.
  • FIG. 2 includes operation time charts showing an example representing how the current Isw, the point A voltage VA, the drive command signal s, the comparator output signal coutl, and the gate signal gin change with time in the drive control apparatus 20 according to the present embodiment of the invention.
  • the power switching element 12 designed as a reverse conducting IGBT or a diode-built-in IGBT
  • the forward voltage of the diode 16 changes depending on the gate voltage gin that is input to the gate of the IGBT 14 when the diode 16 (concretely, the main diode 16a) is in operation (is energized).
  • the loss in the diode 16 increases. Accordingly, from the standpoint of avoiding an increase in the loss in the diode 16, it is effective to turn off the IGBT 14 when the main diode 16a is energized while the IGBT 14 is on.
  • the microcomputer generates the drive command signal s as a command to turn on and off the IGBT 14, and outputs the generated drive command signal s toward the AND circuit 22.
  • the AND circuit 22 outputs a high-level signal toward the gate drive circuit 24 when the drive command signal s input from the microcomputer to the AND circuit 22 is at high level and the signal coutl input from the comparator 30 to the AND circuit 22 is at high level.
  • the gate drive circuit 24 generates the high-level gate signal gin and outputs the generated gate signal gin toward the gate terminal of the IGBT 14, when the output signal input from the AND circuit 22 to the gate drive circuit 24 is at high level.
  • the IGBT 14 is turned on when the high-level gate signal gin is input to the gate terminal.
  • the AND circuit 22 outputs a low-level signal toward the gate drive circuit 24 when the drive command signal s input from the microcomputer to the AND circuit 22 is at low level or the signal coutl input from the comparator 30 to the AND circuit 22 is at low level.
  • the gate drive circuit 24 generates the low-level gate signal gin and outputs the generated gate signal gin toward the gate terminal of the IGBT 14 when the output signal input from the AND circuit 22 to the gate drive circuit 24 is at low level.
  • the IGBT 14 is turned off when the low-level gate signal gin is input to the gate terminal.
  • the drive control apparatus 20 when the main diode 16a of the diode 16 that is formed on the same semiconductor substrate as the IGBT 14 is energized in the forward direction, the IGBT 14 is not driven to be turned on. Besides, when the IGBT 14 is driven to be turned on, the IGBT 14 is driven to be turned off at a timing when the main diode 16a is energized. Accordingly, the occurrence of a gate interference between the IGBT 14 and the diode 16 is avoided during energization of the diode 16. Therefore, according to the present embodiment of the invention, an increase in the forward voltage of the main diode 16a is avoided during energization of the diode 16, so the loss in the main diode 16a can be prevented from increasing.
  • the voltage generated at both the ends of the sense resistor 26 is monitored based on the point A voltage VA that is generated at the output terminal of the operational amplifier 28, in determining whether or not the main diode 16a is energized in the forward direction in the comparator 30.
  • the sense resistor 26 is a resistor that is connected at one end thereof to the anode terminal of the sense diode 16b, and that is connected at the other end thereof to the output terminal of the operational amplifier 28.
  • the operational amplifier 28 is configured such that the inverted input terminal thereof is connected to the anode terminal of the sense diode 16b, that the non-inverted input terminal thereof is connected to the anode terminal of the main diode 16a, and that the output terminal thereof is connected to the other end of the sense resistor 26.
  • the operational amplifier 28 operates in such a manner as to hold the voltage at the anode terminal of the main diode 16a and the voltage at the anode terminal of the sense diode 16b at the same potential.
  • the main diode 16a is energized by monitoring the voltage generated at both the ends of the sense resistor 26 while holding the voltage at the anode terminal of the main diode 16a and the voltage at the anode terminal of the sense diode 16b at the same potential through the operation of the operational amplifier 28.
  • the voltage generated at both the ends of the sense resistor 26 can be detected regardless of the ON voltage of the main diode 16a and the ON voltage of the sense diode 16b. Therefore, the sensitivity in detecting the voltage can be enhanced. Besides, even if the sense resistor 26 that is connected to the sense diode 16b is provided, the current flowing through the sense diode 16b can be made accurately proportional to the current flowing through the main diode 16a through the operation of the operational amplifier 28. As a result, the ratio between both the currents can be accurately maintained.
  • the drive control apparatus 20 can accurately determine, based on the voltage generated at both the ends of the sense resistor 26 that is connected to the sense diode 16b, namely, the current flowing through the sense resistor 26, whether or not the main diode 16a is energized, and can enhance the accuracy in making the determination on energization.
  • the IGBT 14 may be regarded as "the transistor” of the invention.
  • the main diode 16a may be regarded as “the main diode” of the invention.
  • the sense diode 16b may be regarded as “the sense diode” of the invention.
  • the comparator 30 may be regarded as "the first comparator” of the invention.
  • the inverted input terminal of the comparator 30 may be regarded as "the first input terminal” of the invention.
  • the non-inverted input terminal of the comparator 30 may be regarded as "the second input terminal” of the invention.
  • the reference voltage VI may be regarded as "the first threshold voltage” of the invention.
  • the gate drive circuit 24 may be regarded as "the drive circuit” of the invention.
  • the sense resistor 26 is used to determine whether or not the main diode 16a is energized.
  • the invention is not limited to this configuration.
  • the same sense resistor 26 may be used to determine whether or not there is an overcurrent in the IGBT 14.
  • the IGBT 14 has a mainly employed IGBT (hereinafter referred to as a main IGBT) 14a and an IGBT for detecting an overcurrent (hereinafter referred to as a sense IGBT) 14b.
  • the main diode 16a is connected in parallel to the main IGBT 14a between the collector terminal and the emitter terminal.
  • the sense IGBT 14b is configured to detect an overcurrent flowing through the main IGBT 14a.
  • the main IGBT 14a and the sense IGBT 14b are formed with an identical structure on the same semiconductor substrate.
  • the emitter terminal of the main IGBT 14a is grounded.
  • the emitter terminal of the sense IGBT 14b is connected to the anode terminal of the sense diode 16b.
  • the drive control apparatus 20 is equipped with a comparator 50 separate from the comparator 30, and an AND circuit 52 separate from the AND circuit 22.
  • the other end of the sense resistor 26, namely, the output terminal (the point A) of the operational amplifier 28 is connected to a non-inverted input terminal of the comparator 50, and the output voltage (the point A voltage) VA of the operational amplifier 28 is input to the non-inverted input terminal of the comparator 50.
  • a second reference voltage V2 different from the first reference voltage VI that is input to the non-inverted input terminal of the comparator 30 is input to an inverted input terminal of the comparator 50.
  • the aforementioned second reference voltage V2 is a threshold voltage for determining whether or not an overcurrent flows through the main IGBT 14a from the collector terminal side toward the emitter terminal side.
  • the second reference voltage V2 is a potential difference that is generated at both the ends of the sense resistor 26 when the aforementioned overcurrent flows, and is set to a negative value smaller than zero.
  • the comparator 50 is a comparator that operates in such a manner as to compare the point A voltage VA with the second reference voltage V2, and that outputs a signal corresponding to a result of the comparison.
  • the comparator 50 outputs a high-level signal cout2 indicating that no overcurrent flows through the main IGBT 14a when the point A voltage VA is equal to or higher than the second reference voltage V2 (i.e., when there is established a relationship: VA > V2), and outputs the low-level signal cout2 indicating that an overcurrent flows through the main IGBT 14a when the point A voltage VA drops below the second reference voltage V2 (i.e., when there is established a relationship: VA ⁇ V2).
  • the input terminal of the AND circuit 52 is connected to the output terminal of the comparator 30 and the output terminal of the comparator 50.
  • the output signal coutl of the comparator 30 and the output signal cout2 of the comparator 50 are input to the AND circuit 52.
  • the AND circuit 52 is a logic circuit that outputs a high-level signal when all the input signals are at high level.
  • the input terminal of the AND circuit 22 is connected to an output terminal of the AND circuit 52.
  • the drive command signal s from the microcomputer is input to the AND circuit 52, and the output signal of the AND circuit 22 is input to the AND circuit 52.
  • the AND circuit 52 is a logic circuit that outputs a high-level signal when all the input signals are at high level.
  • the drive control apparatus 20 detects the overcurrent based on the voltage that is generated at both the ends of the sense resistor 26 (concretely, the A-point voltage VA that is generated at the output terminal of the operational amplifier 28) in the comparator 50, thereby allowing the main IGBT 14a to be driven to be switched off.
  • the same sense resistor 26 can be used to determine whether or not the diode 16 is energized and determine whether or not there is an overcurrent in the IGBT 14.
  • the main IGBT 14a may be regarded as "the transistor” of the invention.
  • the sense IGBT 14b may be regarded as “the sense transistor” of the invention.
  • the comparator 50 may be regarded as "the second comparator” of the invention.
  • the non-inverted input terminal of the comparator 50 may be regarded as "the third input terminal” of the invention.
  • the inverted input terminal of the comparator 50 may be regarded as "the fourth input terminal” of the invention.
  • the second reference voltage V2 may be regarded as "the second threshold voltage” of the invention.
  • the gate drive circuit 24 may be regarded as "the drive circuit” of the invention.

Abstract

A drive control apparatus (20) for a semiconductor device (10) includes a transistor (14), a main diode (16a), a sense diode (16b), an operational amplifier (28), and a comparator (30). The main diode is connected inversely parallel to the transistor. The sense diode has a cathode terminal that is connected to a cathode terminal of the main diode. The operational amplifier has an inverted input terminal that is connected to an anode terminal of the sense diode, a non-inverted input terminal that is connected to an anode terminal of the main diode, and an output terminal of the operational amplifier that is connected to the anode terminal of the sense diode via a sense resistor (26). The comparator is configured to output a signal indicating whether or not the main diode is energized, by comparing an output voltage generated at the output terminal of the operational amplifier with a first threshold voltage.

Description

DRIVE CONTROL APPARATUS FOR SEMICONDUCTOR DEVICE
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The invention relates to a drive control apparatus for a semiconductor device in which a transistor and a diode are connected inversely parallel to each other. 2. Description of Related Art
[0002] There is known a semiconductor device in which a transistor and a diode are connected inversely parallel to each other (e.g., see Japanese Patent Application Publication No. 2012-019550 (JP-2012-019550 A)). A semiconductor device described in this Japanese Patent Application Publication No. 2012-019550 (JP-2012-019550 A) has a sense diode for detecting a current flowing through a main diode, and a sense resistor. This sense diode has a cathode terminal that is employed in common with a cathode terminal of the main diode, and an anode terminal that is connected to one end of the sense resistor. The other end of the sense resistor is connected to an anode terminal of the main diode. A drive control apparatus for the aforementioned semiconductor device detects a potential difference that is generated at both ends of the sense resistor when a gate signal of a transistor is at high level, and determines, based on the potential difference, whether or not a current flows through the main diode, namely, whether or not the main diode is energized. Then, when it is determined that the main diode is energized, the drive control apparatus turns off the transistor.
[0003] However, with the drive control apparatus described in the aforementioned Japanese Patent Application Publication No. 2012-019550 (JP-2012-019550 A), the sense resistor is interposed between the anode terminal of the main diode and the anode terminal of the sense diode, so the ON voltage of the main diode and the ON voltage of the sense diode are different from each other. Therefore, with a determination method as described in the aforementioned Japanese Patent Application Publication No. 2012-019550 (JP-2012-019550 A), the magnitude of the current flowing through the main diode and the magnitude of the current flowing through the sense diode are not proportional to each other, and the potential difference at both the ends of the sense resistor does not appropriately represent the magnitude of the current flowing through the main diode. Therefore, the accuracy in determining whether or not the main diode is energized deteriorates.
SUMMARY OF THE INVENTION
[0004] The invention provides a drive control apparatus for a semiconductor device that can enhance the accuracy in determining whether or not a main diode is energized.
[0005] A drive control apparatus for a semiconductor device according to an aspect of the invention includes a transistor, a main diode, a sense diode, an operational amplifier, and a first comparator. The transistor is configured to conduct a switching operation by a gate signal that is input to a gate terminal of the transistor. The main diode is connected inversely parallel to the transistor. The sense diode has a cathode terminal that is connected to a cathode terminal of the main diode. The operational amplifier has an inverted input terminal that is connected to an anode terminal of the sense diode, a non-inverted input terminal that is connected to an anode terminal of the main diode, and an output terminal that is connected to the anode terminal of the sense diode via a sense resistor. The first comparator is configured to output a signal indicating whether or not the main diode is energized, by comparing an output voltage generated at the output terminal of the operational amplifier with a first threshold voltage.
[0006] According to the aspect of the invention, the accuracy in determining whether or not the main diode is energized can be enhanced. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Features, advantages, and technical and industrial significance of one exemplary embodiment of the invention will be described below with reference to the accompanying drawings, in which like numerals denote like elements, and wherein:
FIG. 1 is a block diagram of a drive control apparatus for a semiconductor device according to the embodiment of the invention;
FIG. 2 shows operation time charts in the drive control apparatus according to the present embodiment of the invention; and
FIG. 3 is a block diagram of a drive control apparatus for a semiconductor device according to a modification example of the invention.
DETAILED DESCRIPTION OF EMBODIMENT
[0008] A concrete mode for realizing a protection device of a drive control apparatus for a semiconductor device according to the invention will be described hereinafter, with reference to the drawings.
[0009] FIG. 1 is a block diagram showing a drive control apparatus 20 for a semiconductor device 10 according to one embodiment of the invention. The semiconductor device 10 according to the present embodiment of the invention is, for example, an electric power conversion device such as an inverter module or the like, which is mounted on an electric vehicle or a hybrid vehicle to carry out voltage conversion between a three-phase motor and a direct-current electric power supply such as a battery or the like. The three-phase motor serves as a drive source that is an electric load.
[0010] The semiconductor device 10 is equipped with a power switching element 12. The power switching element 12 is, for example, an element that constitutes upper and lower arms corresponding to the aforementioned three-phase motor. The power switching element 12 is a reverse conducting insulated gate bipolar transistor (IGBT) or a diode-built-in IGBT, which is, for example, a power transistor. The power switching element 12 has an IGBT 14 and a diode 16. This IGBT 14 and this diode 16 are formed on the same semiconductor substrate. Incidentally, the power switching element 12 may have a switching element such as a metal-oxide-semiconductor field-effect transistor (a MOSFET) or the like, instead of the IGBT 14.
[0011] The IGBT 14 is a switching element that is driven to be switched on and off in order to carry out voltage conversion as described above. A collector terminal of the IGBT 14 is connected to a load, an electric power supply or the like. Besides, an emitter terminal of the IGBT 14 is grounded. When the IGBT 14 is turned on, a current flows between the collector terminal of the IGBT 14 and the emitter terminal of the IGBT 14, and a current flows through the load or the like in a predetermined direction.
[0012] Besides, the diode 16 is an antiparallel diode that commutates a load current flowing through the power switching element 12. The diode 16 has a mainly employed diode (hereinafter referred to as a main diode) 16a that is connected in parallel between the collector terminal of the IGBT 14 and the emitter terminal of the IGBT 14. The main diode 16a is configured such that an anode terminal thereof is connected to the emitter terminal of the IGBT 14, and that a cathode terminal thereof is connected to the collector terminal of the IGBT 14. The main diode 16a allows a current to flow reversely to the flow of the current in the IGBT 14, namely, allows a current (a forward current) to flow from the emitter terminal side of the IGBT 14 to the collector terminal side of the IGBT 14.
[0013] The IGBT 14 and the main diode 16a of the diode 16 are connected inversely parallel to each other. Hereinafter, the current flowing through the power switching element 12 will be denoted by Isw. Besides, the direction of a current Isw from the collector terminal side of the IGBT 14 to the emitter terminal side of the IGBT 14 is assumed to be a positive side, and the direction of the current Isw from the emitter terminal side of the IGBT 14 to the collector terminal side of the IGBT 14 is assumed to be a negative side.
[0014] Besides, the diode 16 has a diode for detecting a current (hereinafter referred to as a sense diode) 16b that is provided to detect a forward current flowing through the main diode 16a. The main diode 16a and the sense diode 16b are formed with an identical structure on the same semiconductor substrate. A cathode terminal of the main diode 16a and a cathode terminal of the sense diode 16b are connected to the collector terminal of the IGBT 14.
[0015] The drive control apparatus 20 is an electronic control unit that controls the turning on and off of the power switching element 12 (concretely, the IGBT 14). The drive control apparatus 20 is mainly constituted by a microcomputer (not shown), and is equipped with an AND circuit 22, a gate drive circuit 24, a sense resistor 26, an operational amplifier 28, and a comparator 30.
[0016] The microcomputer of the drive control apparatus 20 performs a process of outputting a drive command signal s in accordance with a predetermined condition. Concretely, the microcomputer generates and outputs the high-level drive command signal s at a timing when the IGBT 14 should be turned on, and generates and outputs the low-level drive command signal s at a timing when the IGBT 14 should be turned off.
[0017] The aforementioned microcomputer is connected to an input terminal of the AND circuit 22, and an output terminal of the comparator 30 is connected to the input terminal of the AND circuit 22. The drive command signal s from the microcomputer is input to the AND circuit 22, and an output signal coutl of the comparator 30 is input to the AND circuit 22. The AND circuit 22 is a logic circuit that outputs a high-level signal when all input signals are at high level.
[0018] An input terminal of the gate drive circuit 24 is connected to an output terminal of the AND circuit 22. An output signal of the AND circuit 22 is input to the gate drive circuit 24. The gate drive circuit 24 is a circuit that generates a gate voltage to be applied to a gate terminal of the IGBT 14 of the power switching element 12, in accordance with the output signal of the AND circuit 22 input to the gate drive circuit 24, and that outputs the generated gate voltage as a gate signal gin. The gate terminal of the IGBT 14 is connected to an output terminal of the gate drive circuit 24. The IGBT 14 is turned on and off in accordance with the gate signal gin that is supplied from the gate drive circuit 24.
[0019] An anode terminal of the aforementioned sense diode 16b is connected to one end of the sense resistor 26, and is connected to an inverted input terminal of the operational amplifier 28. Besides, an anode terminal of the aforementioned main diode 16a is connected to a non-inverted input terminal of the operational amplifier 28. The other end of the sense resistor 26 is connected to an output terminal (a point A) of the operational amplifier 28.
[0020] That is, the operational amplifier 28 is configured such that the inverted input terminal thereof is connected to the anode terminal of the sense diode 16b and one end of the sense resistor 26, that the non-inverted input terminal thereof is connected to the anode terminal of the main diode 16a (i.e., the emitter terminal of the IGBT 14), and that the output terminal thereof is connected to the other end of the sense resistor 26 (i.e., to the anode terminal of the sense diode 16b via the sense resistor 26). The operational amplifier 28 operates such that the voltages input to two input terminals, namely, the inverted input terminal and the non-inverted input terminal coincide with each other.
[0021] The other end of the sense resistor 26, namely, an output terminal of the operational amplifier 28 is connected to an inverted input terminal of the comparator 30. An output voltage (a point A voltage) VA that is generated at the output terminal of the operational amplifier 28 is input to the inverted input terminal of the comparator 30. Besides, a reference voltage VI is input to a non-inverted input terminal of the comparator 30.
[0022] Incidentally, the aforementioned reference voltage VI is a threshold voltage for determining whether or not a forward current flows through the main diode 16a from the anode terminal side to the cathode terminal side. Concretely, the reference voltage VI is a potential difference that is generated at both the ends of the sense resistor 26 when a predetermined current flows through the sense resistor 26 from the output terminal side of the operational amplifier 28 toward the anode terminal side of the sense diode 16b, and is set approximately equal to zero or to a positive value extremely close to zero.
[0023] The comparator 30 is a comparator that operates in such a manner as to compare the point A voltage VA with the reference voltage VI, and that outputs a signal corresponding to a result of the comparison. The comparator 30 outputs the low-level signal coutl indicating that the main diode 16a is energized, when the point A voltage VA exceeds the reference voltage VI (i.e., when there is established a relationship: VA > VI). Besides, the comparator 30 outputs the high-level signal coutl indicating that the main diode 16a is not energized, when the point A voltage VA is equal to or lower than the reference voltage VI (i.e., when there is established a relationship: VA≤ VI). [0024] The drive control apparatus 20 carries out electric power conversion between a direct-current voltage on the direct-current electric power supply side and an alternating-current voltage on the three-phase motor side by offsetting the phases of three-phase upper and lower arms by 120° while alternately turning on and off the IGBT 14 as the upper arm and the IGBT 14 as the lower arm, which constitute an inverter module as the semiconductor device 10.
[0025] Next, the operation of the drive control apparatus 20 for the semiconductor device 10 according to the present embodiment of the invention will be described with reference to FIG. 2. FIG. 2 includes operation time charts showing an example representing how the current Isw, the point A voltage VA, the drive command signal s, the comparator output signal coutl, and the gate signal gin change with time in the drive control apparatus 20 according to the present embodiment of the invention.
[0026] By the way, with the power switching element 12 designed as a reverse conducting IGBT or a diode-built-in IGBT, there occurs a gate interference in which the forward voltage of the diode 16 changes depending on the gate voltage gin that is input to the gate of the IGBT 14 when the diode 16 (concretely, the main diode 16a) is in operation (is energized). As a result, the loss in the diode 16 increases. Accordingly, from the standpoint of avoiding an increase in the loss in the diode 16, it is effective to turn off the IGBT 14 when the main diode 16a is energized while the IGBT 14 is on.
[0027] In the present embodiment of the invention, the microcomputer generates the drive command signal s as a command to turn on and off the IGBT 14, and outputs the generated drive command signal s toward the AND circuit 22. The AND circuit 22 outputs a high-level signal toward the gate drive circuit 24 when the drive command signal s input from the microcomputer to the AND circuit 22 is at high level and the signal coutl input from the comparator 30 to the AND circuit 22 is at high level. The gate drive circuit 24 generates the high-level gate signal gin and outputs the generated gate signal gin toward the gate terminal of the IGBT 14, when the output signal input from the AND circuit 22 to the gate drive circuit 24 is at high level. The IGBT 14 is turned on when the high-level gate signal gin is input to the gate terminal. [0028] On the other hand, the AND circuit 22 outputs a low-level signal toward the gate drive circuit 24 when the drive command signal s input from the microcomputer to the AND circuit 22 is at low level or the signal coutl input from the comparator 30 to the AND circuit 22 is at low level. The gate drive circuit 24 generates the low-level gate signal gin and outputs the generated gate signal gin toward the gate terminal of the IGBT 14 when the output signal input from the AND circuit 22 to the gate drive circuit 24 is at low level. The IGBT 14 is turned off when the low-level gate signal gin is input to the gate terminal.
[0029] When the IGBT 14 is normally turned on, a current flows through the IGBT 14 from the collector terminal side to the emitter terminal side, whereas no forward current flows through the main diode 16a of the diode 16. When no forward current flows through the main diode 16a, no current flows through the sense resistor 26 from the output terminal side of the operational amplifier 28 to the anode terminal side of the sense diode 16b. Therefore, the point A voltage VA on the output side of the operational amplifier 28 becomes low with respect to the voltage at the emitter terminal of the IGBT 14, and does not exceed the reference voltage VI . In this case, the comparator 30 outputs the high-level signal coutl, so the AND circuit 22 continues to output the high-level signal toward the gate drive circuit 24, and the IGBT 14 remains on.
[0030] On the other hand, when a forward current flows through the main diode 16a of the diode 16 (during an energization period T shown in FIG. 2), a current corresponding to the current flowing through the main diode 16a flows through the sense resistor 26 from the output terminal side of the operational amplifier 28 to the anode terminal side of the sense diode 16b, and flows through the sense diode 16b. Therefore, the point A voltage VA on the output side of the operational amplifier 28 becomes high with respect to the voltage at the emitter terminal of the IGBT 14, and exceeds the reference voltage VI. In this case, the comparator 30 outputs the low-level signal coutl, so the AND circuit 22 outputs the low-level signal toward the gate drive circuit 24, and the IGBT 14 is turned off.
[0031] In this manner, with the drive control apparatus 20 according to the present embodiment of the invention, when the main diode 16a of the diode 16 that is formed on the same semiconductor substrate as the IGBT 14 is energized in the forward direction, the IGBT 14 is not driven to be turned on. Besides, when the IGBT 14 is driven to be turned on, the IGBT 14 is driven to be turned off at a timing when the main diode 16a is energized. Accordingly, the occurrence of a gate interference between the IGBT 14 and the diode 16 is avoided during energization of the diode 16. Therefore, according to the present embodiment of the invention, an increase in the forward voltage of the main diode 16a is avoided during energization of the diode 16, so the loss in the main diode 16a can be prevented from increasing.
[0032] Besides, in the present embodiment of the invention, the voltage generated at both the ends of the sense resistor 26 is monitored based on the point A voltage VA that is generated at the output terminal of the operational amplifier 28, in determining whether or not the main diode 16a is energized in the forward direction in the comparator 30. The sense resistor 26 is a resistor that is connected at one end thereof to the anode terminal of the sense diode 16b, and that is connected at the other end thereof to the output terminal of the operational amplifier 28. Besides, the operational amplifier 28 is configured such that the inverted input terminal thereof is connected to the anode terminal of the sense diode 16b, that the non-inverted input terminal thereof is connected to the anode terminal of the main diode 16a, and that the output terminal thereof is connected to the other end of the sense resistor 26. The operational amplifier 28 operates in such a manner as to hold the voltage at the anode terminal of the main diode 16a and the voltage at the anode terminal of the sense diode 16b at the same potential.
[0033] In this manner, with the present embodiment of the invention, it is determined whether or not the main diode 16a is energized by monitoring the voltage generated at both the ends of the sense resistor 26 while holding the voltage at the anode terminal of the main diode 16a and the voltage at the anode terminal of the sense diode 16b at the same potential through the operation of the operational amplifier 28.
[0034] In this configuration, the voltage generated at both the ends of the sense resistor 26 can be detected regardless of the ON voltage of the main diode 16a and the ON voltage of the sense diode 16b. Therefore, the sensitivity in detecting the voltage can be enhanced. Besides, even if the sense resistor 26 that is connected to the sense diode 16b is provided, the current flowing through the sense diode 16b can be made accurately proportional to the current flowing through the main diode 16a through the operation of the operational amplifier 28. As a result, the ratio between both the currents can be accurately maintained.
[0035] In consequence, the drive control apparatus 20 according to the present embodiment of the invention can accurately determine, based on the voltage generated at both the ends of the sense resistor 26 that is connected to the sense diode 16b, namely, the current flowing through the sense resistor 26, whether or not the main diode 16a is energized, and can enhance the accuracy in making the determination on energization.
[0036] Incidentally, in the aforementioned embodiment of the invention, the IGBT 14 may be regarded as "the transistor" of the invention. The main diode 16a may be regarded as "the main diode" of the invention. The sense diode 16b may be regarded as "the sense diode" of the invention. The comparator 30 may be regarded as "the first comparator" of the invention. The inverted input terminal of the comparator 30 may be regarded as "the first input terminal" of the invention. The non-inverted input terminal of the comparator 30 may be regarded as "the second input terminal" of the invention. The reference voltage VI may be regarded as "the first threshold voltage" of the invention. The gate drive circuit 24 may be regarded as "the drive circuit" of the invention.
[0037] By the way, in the aforementioned embodiment of the invention, the sense resistor 26 is used to determine whether or not the main diode 16a is energized. However, the invention is not limited to this configuration. Furthermore, the same sense resistor 26 may be used to determine whether or not there is an overcurrent in the IGBT 14.
[0038] In the present modification example shown in FIG. 3, the IGBT 14 has a mainly employed IGBT (hereinafter referred to as a main IGBT) 14a and an IGBT for detecting an overcurrent (hereinafter referred to as a sense IGBT) 14b. The main diode 16a is connected in parallel to the main IGBT 14a between the collector terminal and the emitter terminal. The sense IGBT 14b is configured to detect an overcurrent flowing through the main IGBT 14a. The main IGBT 14a and the sense IGBT 14b are formed with an identical structure on the same semiconductor substrate. The emitter terminal of the main IGBT 14a is grounded. Besides, the emitter terminal of the sense IGBT 14b is connected to the anode terminal of the sense diode 16b.
[0039] Besides, the drive control apparatus 20 is equipped with a comparator 50 separate from the comparator 30, and an AND circuit 52 separate from the AND circuit 22. The other end of the sense resistor 26, namely, the output terminal (the point A) of the operational amplifier 28 is connected to a non-inverted input terminal of the comparator 50, and the output voltage (the point A voltage) VA of the operational amplifier 28 is input to the non-inverted input terminal of the comparator 50. Besides, a second reference voltage V2 different from the first reference voltage VI that is input to the non-inverted input terminal of the comparator 30 is input to an inverted input terminal of the comparator 50.
[0040] Incidentally, the aforementioned second reference voltage V2 is a threshold voltage for determining whether or not an overcurrent flows through the main IGBT 14a from the collector terminal side toward the emitter terminal side. Concretely, the second reference voltage V2 is a potential difference that is generated at both the ends of the sense resistor 26 when the aforementioned overcurrent flows, and is set to a negative value smaller than zero.
[0041] The comparator 50 is a comparator that operates in such a manner as to compare the point A voltage VA with the second reference voltage V2, and that outputs a signal corresponding to a result of the comparison. The comparator 50 outputs a high-level signal cout2 indicating that no overcurrent flows through the main IGBT 14a when the point A voltage VA is equal to or higher than the second reference voltage V2 (i.e., when there is established a relationship: VA > V2), and outputs the low-level signal cout2 indicating that an overcurrent flows through the main IGBT 14a when the point A voltage VA drops below the second reference voltage V2 (i.e., when there is established a relationship: VA < V2).
[0042] The input terminal of the AND circuit 52 is connected to the output terminal of the comparator 30 and the output terminal of the comparator 50. The output signal coutl of the comparator 30 and the output signal cout2 of the comparator 50 are input to the AND circuit 52. The AND circuit 52 is a logic circuit that outputs a high-level signal when all the input signals are at high level. The input terminal of the AND circuit 22 is connected to an output terminal of the AND circuit 52. The drive command signal s from the microcomputer is input to the AND circuit 52, and the output signal of the AND circuit 22 is input to the AND circuit 52. The AND circuit 52 is a logic circuit that outputs a high-level signal when all the input signals are at high level.
[0043] In the configuration of the aforementioned modification example, when an overcurrent flows through the main IGBT 14a of the IGBT 14, the current corresponding to the overcurrent of the main IGBT 14a flows through the sense resistor 26 from the emitter terminal side of the sense IGBT 14b to the output terminal side of the operational amplifier 28. Therefore, the A-point voltage VA on the output side of the operational amplifier 28 becomes low with respect to the voltage at the emitter terminal of the IGBT 14 (concretely, the sense IGBT 14b), and drops below the second reference voltage V2. In this case, the comparator 50 outputs the low-level signal cout2. Therefore, the AND circuit 52 outputs the low-level signal cout2, and the AND circuit 22 outputs a low-level signal toward the gate drive circuit 24. As a result, the IGBT 14 is turned off.
[0044] In consequence, when an overcurrent flows through the main IGBT 14a of the IGBT 14, the drive control apparatus 20 according to the present modification example detects the overcurrent based on the voltage that is generated at both the ends of the sense resistor 26 (concretely, the A-point voltage VA that is generated at the output terminal of the operational amplifier 28) in the comparator 50, thereby allowing the main IGBT 14a to be driven to be switched off. In this respect, according to the present modification example, the same sense resistor 26 can be used to determine whether or not the diode 16 is energized and determine whether or not there is an overcurrent in the IGBT 14.
[0045] Incidentally, in the aforementioned modification example, the main IGBT 14a may be regarded as "the transistor" of the invention. The sense IGBT 14b may be regarded as "the sense transistor" of the invention. The comparator 50 may be regarded as "the second comparator" of the invention. The non-inverted input terminal of the comparator 50 may be regarded as "the third input terminal" of the invention. The inverted input terminal of the comparator 50 may be regarded as "the fourth input terminal" of the invention. The second reference voltage V2 may be regarded as "the second threshold voltage" of the invention. The gate drive circuit 24 may be regarded as "the drive circuit" of the invention.

Claims

1. A drive control apparatus for a semiconductor device, comprising:
a transistor that is configured to conduct a switching operation by a gate signal that is input to a gate terminal of the transistor;
a main diode that is connected inversely parallel to the transistor;
a sense diode having a cathode terminal that is connected to a cathode terminal of the main diode;
an operational amplifier that has an inverted input terminal, a non-inverted input terminal, and an output terminal, the inverted input terminal being connected to an anode terminal of the sense diode, the non-inverted input terminal being connected to an anode terminal of the main diode, and the output terminal of the operational amplifier being connected to the anode terminal of the sense diode via a sense resistor; and
a first comparator that is configured to output a signal indicating whether or not the main diode is energized, by comparing an output voltage generated at the output terminal of the operational amplifier with a first threshold voltage.
2. The drive control apparatus for the semiconductor device according to claim 1, further comprising:
a drive circuit that is configured to generate and to output the low-level gate signal when a signal indicating that the main diode is energized is input to the drive circuit from the first comparator .
3. The drive control apparatus for the semiconductor device according to claim 1, wherein
the first comparator has a first input terminal, a second input terminal, and an output terminal,
the output voltage is input to the first input terminal,
the first threshold voltage is input to the second input terminal, and the output terminal of the first comparator is configured to output a signal indicating that the main diode is energized when the output voltage input to the first input terminal exceeds the first threshold voltage input to the second input terminal.
4. The drive control apparatus for the semiconductor device according to claim 3, further comprising:
a drive circuit that is configured to generate and to output the low-level gate signal when the signal indicating that the main diode is energized is input to the drive circuit from the output terminal of the first comparator .
5. The drive control apparatus for the semiconductor device according to claim 4, further comprising:
a sense transistor that has an emitter terminal connected to the anode terminal of the sense diode, and that is configured to detect a current flowing through the transistor; and a second comparator that is configured to output a signal indicating whether or not an overcurrent flows through the transistor, by comparing the output voltage generated at the output terminal of the operational amplifier with a second threshold voltage, wherein
the drive circuit is configured to generate and output the low-level gate signal when a signal indicating that the overcurrent flows through the transistor is input to the drive circuit from the second comparator.
6. The drive control apparatus for the semiconductor device according to any one of claims 1 to 3, further comprising:
a sense transistor that has an emitter terminal connected to the anode terminal of the sense diode, and that is configured to detect a current flowing through the transistor; and a second comparator that is configured to output a signal indicating whether or not an overcurrent flows through the transistor, by comparing the output voltage generated at the output terminal of the operational amplifier with a second threshold voltage.
7. The drive control apparatus for the semiconductor device according to claim 6, further comprising:
a drive circuit that is configured to generate and to output the low-level gate signal when a signal indicating that the overcurrent flows through the transistor is input to the drive circuit from the second comparator.
8. The drive control apparatus for the semiconductor device according to claim 6, wherein
the second comparator has a third input terminal, a fourth input terminal, and an output terminal,
the output voltage is input to the third input terminal,
the second threshold voltage is input to the fourth input terminal, and
the output terminal of the second comparator is configured to output a signal indicating that the overcurrent flows through the transistor when the output voltage input to the third input terminal drops below the second threshold voltage input to the fourth input terminal.
9. The drive control apparatus for the semiconductor device according to claim 8, further comprising:
a drive circuit that is configured to generate and to output the low-level gate signal when the signal indicating that the overcurrent flows through the transistor is input to the drive circuit from the output terminal of the second comparator.
PCT/IB2014/002798 2013-12-19 2014-12-17 Drive control apparatus for semiconductor device WO2015092522A1 (en)

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