CN112701893A - Series converter based on Si IGBT/SiC MOS hybrid parallel device and fault operation control method thereof - Google Patents
Series converter based on Si IGBT/SiC MOS hybrid parallel device and fault operation control method thereof Download PDFInfo
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- CN112701893A CN112701893A CN202011580335.7A CN202011580335A CN112701893A CN 112701893 A CN112701893 A CN 112701893A CN 202011580335 A CN202011580335 A CN 202011580335A CN 112701893 A CN112701893 A CN 112701893A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a series converter based on Si IGBT/SiC MOS hybrid parallel devices and a fault operation control method thereof, the converter is of a half-bridge structure, an upper bridge arm and a lower bridge arm are respectively formed by connecting (n + r) hybrid parallel devices in series, wherein n devices maintain normal operation, r devices are used as redundancy, each hybrid parallel device is formed by connecting a SiC MOS and b IGBT in parallel, each IGBT/SiC MOS comprises a driver, and the converter comprises a general central controller which is responsible for the drive sequence, state monitoring and control strategy adjustment of the devices. If a certain power device in the converter fails, the fault operation control strategy can judge the failure position and upload the operation condition of the converter in a switching period, and the control strategy is adopted to maintain normal operation. The converter provided by the invention has the advantages of high-voltage high power and high-frequency high power density, the fault control strategy can ensure that the converter continues to normally operate under the condition of device fault, and the fault tolerance of the system is improved.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a series converter based on a Si IGBT/SiC MOS hybrid parallel device and a fault operation control method thereof, and belongs to the technical field of high-voltage high-power converters.
Background
At present, the power electronic technology is widely applied to a plurality of fields of motor driving, flexible and straight power supplies, uninterruptible power supplies and the like. The industrial application has higher and higher requirements on high voltage and high power of the power electronic converter, and the voltage grade of a single power device cannot meet the application requirements due to the constraints of the on-resistance, the device structure and the production process, so that the voltage grade of the power electronic converter is improved in a mode of connecting devices in series in some application occasions, and the application requirements are met. Meanwhile, in order to reduce the size and weight of the converter, high-efficiency high-power density is a development trend of the power electronic converter, and reducing the loss of the power device and increasing the switching frequency of the power device are effective ways to realize high-efficiency high power.
Because the switching loss of the Si IGBT is large, the series converter based on the Si IGBT can meet the application requirement of high voltage and high power, but the working frequency is low, and the development trend of high efficiency and high power density cannot be met. Compared with the traditional silicon-based device, the SiC MOSFET (metal oxide semiconductor field effect transistor) of the wide-bandgap semiconductor device has the characteristics of high breakdown voltage, low switching loss, high switching frequency, high operating temperature and the like, and a series converter based on the SiC MOSFET can meet the application requirement of high voltage and high power and can also meet the development trend of high efficiency and high power density. Moreover, the existing SiC MOSFET modules all adopt a welding type packaging process, the power chips are interconnected through binding wires, and an open-circuit fault mode appears after failure. The failure of a certain power device in the series converter based on the SiC MOSFET causes the shutdown of the whole converter, the reliability of the converter is low, the fault tolerance rate of the system is greatly reduced, and the later maintenance cost of the system is increased.
In summary, there are major problems: the series converter in the prior art cannot simultaneously meet the application requirements of low switching loss, low cost, high overload and short circuit capacity and high frequency, the existing series converter does not have fault operation capacity, the failure of a certain power device in the converter can cause the whole converter to stop operating, the reliability of a system is reduced, the maintenance cost is improved, and the economic loss of a certain degree is caused.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a series converter based on a Si IGBT/SiC MOS hybrid parallel device and a fault operation control method thereof, which have the performances of low switching loss, low cost, high overload and short-circuit capacity, high frequency and the like, maintain the normal operation of the converter under the condition of failure of a power device in the converter, and upload the health state of the converter to a system so as to carry out maintenance and repair when the system stops working, thereby greatly improving the reliability and fault tolerance of the system.
Therefore, the invention adopts the following technical scheme:
a series converter based on Si IGBT/SiC MOS hybrid parallel devices is characterized in that the series converter is of a half-bridge structure, an upper bridge arm and a lower bridge arm are symmetrical, the upper bridge arm and the lower bridge arm are both formed by connecting n + r hybrid parallel devices in series, the n hybrid parallel devices maintain normal operation of the series converter, the r hybrid parallel devices are used for redundancy, each hybrid parallel device in the series converter is formed by connecting a SiC MOS and b IGBTs in parallel, the number of the SiC MOS is 1-2 due to the high price of the SiC MOS, the number of the IGBTs is determined by the rated currents of the converter, the SiC MOS and the IGBTs, the number of the IGBTs is equal to the rated current of the converter minus the rated current of the SiC MOS and then divided by the rated current of the IGBTs, the drain electrode of each SiC MOS in the hybrid parallel devices is connected with the collector electrode of each IGBT, and the source electrode of each SiC MOS is, each power device in the series converter comprises an independent driver, the drivers are responsible for receiving driving signals, driving the power devices and sending feedback signals, and the series converter comprises a general central controller which is responsible for receiving the driving signal sequence of each power device, receiving the feedback signals, judging the health state of the devices and adjusting a control strategy. If a certain power device in the series converter fails, the fault operation control strategy can judge the failure position in a switching period (microsecond level), upload the operation condition of the series converter, and adopt corresponding control strategies to bypass the fault device and input a redundant device so as to maintain the normal operation of the series converter.
Further preferably, the voltage levels of the SiC MOS and the IGBT in the hybrid parallel device are the same.
Further preferably, the SiC MOS and the IGBT in the hybrid parallel device are separate power devices or power modules.
Further preferably, the driving signal and the feedback signal are transmitted through an optical fiber.
Further preferably, the central controller is a digital control logic chip such as an FPGA or a CPLD.
Further preferably, the device failure modes include an open fault and a short fault.
Preferably, the driver sends a feedback signal to the central controller after a delay time when receiving the driving turn-on signal and the driven device is in a normal on state; the driver comprises a device voltage sampling function, and the sampling driver samples the voltages at two ends of the power device under the condition that the power device is completely switched off after receiving the driving switching-off signal; the driver comprises a digital control chip, is in communication connection with the central controller in modes of optical fibers and the like, and uploads the sampled device voltage to the central controller.
Further preferably, the power device status monitoring is implemented based on the following manner: the central controller judges whether the power device is in open circuit failure or not and positions the failure position by detecting the feedback signal; the voltage at two ends of the power device sampled after the driver receives the turn-off signal under the short-circuit fault is zero, and the central controller judges whether the power device is short-circuit failure or not and positions the failure position by detecting the voltage at two ends of the power device during turn-off.
Further preferably, the number r of redundant devices is a result of a tradeoff between converter reliability and converter cost, and the reliability of the series converter is:
where r (t) is an expression for a single power device, the cost of the series converter is y-kr + m, where m is the cost of the series converter without the redundant device, k is the cost of adding one redundant device, and y is the total cost of the series converter.
According to the fault operation control method of the series converter based on the Si IGBT/SiC MOS hybrid parallel device, the fault type can be judged, the fault type can be positioned and a coping strategy can be made in one switching period (microsecond level) according to the open-circuit fault and the short-circuit fault of the device;
if the power device in the series converter is in open-circuit fault, the control method specifically comprises the following steps:
(1) the central controller sends driving to the power devices in the operation state in the series converter, and detects the feedback signal of each power device after a period of delay time;
(2) if the feedback signal of a certain power device in the series converter is lost, the central controller judges that the power device is in an open-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; meanwhile, the central controller enables the redundant power device to be in an operation state and puts the redundant power device into the converter;
if the power device in the series converter is in short circuit fault; the control method specifically comprises the following steps:
(1) the central controller sends out drive turn-off to the power devices in the series converter in the running state, and detects the voltage at two ends of each power device after a period of delay time;
(2) if the voltage at two ends of a certain power device in the series converter in the off state is zero, the central controller judges that the power device is in short-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; while the central controller puts redundant power device enable into the converter for run state.
The converter provided by the invention based on the mode of connecting the devices in series can effectively improve the voltage power level of the converter, meanwhile, the series converter can meet the characteristics of low conduction loss, low switching loss, low cost and large short-circuit tolerance, can meet the market requirement of high voltage and high power and the development trend of high frequency and high power density, and can ensure that the series converter can continuously and normally operate under the fault condition of the power device and upload the operation state of the converter by utilizing the fault control strategy by combining the operation characteristics of the series converter, thereby improving the reliability of the series converter and improving the fault tolerance of the system.
The invention has the beneficial effects that:
1. the series converter based on the Si IGBT/SiC MOS hybrid parallel device can effectively improve the voltage power level of the converter, can flexibly configure the number of the series devices and the number of the devices in the hybrid parallel device according to application requirements, and meets industrial application requirements.
2. The series converter based on the Si IGBT/SiC MOS hybrid parallel device has the advantages of low conduction loss, high overload and short circuit capacity, low cost, low switching loss of the SiC MOS and high frequency, the efficiency of the series converter is greatly improved, and compared with the series converter based on the SiC MOS, the series converter based on the Si IGBT/SiC MOS hybrid parallel device has the advantages that part of the high-cost SiC MOS can be replaced by the low-cost Si IGBT, the cost of the converter is reduced, and the application requirement of high frequency and high power density is met.
3. The series converter based on the Si IGBT/SiC MOS hybrid parallel device provided by the invention has fault operation capability, and the power device connected in parallel with the converter can still be normally conducted to maintain the normal operation of the converter under the condition that a certain power device fails.
4. The fault operation control method provided by the invention combines the fault operation characteristics of the series converter, completes a series of actions of monitoring the health state of each power device in the converter, judging failure types, positioning the position of the fault device, bypassing the fault device, inputting a redundant device and the like in a switching period (microsecond level), maintains the normal operation of the series converter under the fault state, and uploads the health state of the whole converter to a system layer so as to facilitate later maintenance and replacement.
Drawings
FIG. 1 is a schematic diagram of a series converter circuit based on a Si IGBT/SiC MOS hybrid parallel device;
FIG. 2 is a graph of series converter reliability, cost versus number of redundant devices;
FIG. 3 is a circuit diagram of experimental testing based on a prototype of a built series converter;
FIG. 4 is a timing diagram of control under an open device fault condition;
FIG. 5 is a graph of test waveforms based on an experimental prototype device open circuit fault condition;
FIG. 6 is a timing diagram of control under a device short fault condition;
fig. 7 is a waveform diagram of a test based on an experimental prototype device short-circuit fault condition.
Detailed Description
The technical solution of the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention.
As shown in FIG. 1, the present invention provides a series converter based on Si IGBT/SiC MOS hybrid parallel devices, the series converter is a half-bridge structure, and comprises three output terminals of DC positive, DC negative and AC, the upper and lower bridge arms are symmetrical, the upper and lower bridge arms are composed of n + r hybrid parallel devices connected in series, wherein n devices maintain the normal operation of the series converter, r devices are used as redundancy, each hybrid parallel device in the series converter is composed of a SiC MOS and b IGBT in parallel, i.e. the drain electrode of each SiC MOS in the hybrid parallel device is connected with the collector electrode of each IGBT, the source electrode of each SiC MOS is connected with the emitter electrode of each IGBT, each power device in the series converter comprises an independent driver, the driver is responsible for receiving driving signals, driving the power device and sending feedback signals, the series converter comprises a general central controller, and the system is responsible for receiving a driving signal sequence and a feedback signal of each power device, judging the health state of the device and adjusting a control strategy.
The SiC MOS and the IGBT in the hybrid parallel device have the same voltage grade, and are separated power devices or power modules, for example, the SiC MOS and the IGBT can both adopt devices with the voltage grade of 1200V, the SiC MOS can select a Rohm discrete device SCT3105KLHR or a power module BSM180D12P2C101, the IGBT can select Yingfei IKW25N120H3 or a power module FF900R12ME7_ B11, if the SiC MOS and the IGBT both adopt discrete devices, the hybrid device and the series converter are connected through a laminated PCB, and if the SiC MOS and the IGBT both adopt power modules, the hybrid device and the series converter are connected through a laminated busbar.
The driving signal and the feedback signal in the series converter are transmitted through optical fibers, and in order to ensure the electrical insulation under high voltage, the communication between the central controller and the drivers of all the power devices is in the form of optical fibers, including the transmission of the driving signal, the feedback signal and the voltage sampling signal.
The central controller in the series converter is a digital control logic chip such as an FPGA (field programmable gate array) or a CPLD (complex programmable logic device), and for example, the central controller adopts an FPGA chip EP4CE15E22C 8N.
When a driver of each power device in the series converter receives a driving turn-on signal and the driven device is in a normal conduction state, a feedback signal is sent to the central controller after a period of delay time; the driver comprises a device voltage sampling function, and the sampling driver samples the voltages at two ends of the power device under the condition that the power device is completely switched off after receiving the driving switching-off signal; the driver comprises a digital control chip, and is communicated with the central controller through an optical fiber to upload the sampled device voltage to the central controller.
The number r of redundant devices is a result of the balance between the reliability of the converter and the cost of the converter, and the reliability of the series converter is as follows:
where r (t) is an expression for a single power device, the cost of the series converter is y-kr + m, where m is the cost of the series converter without the redundant device, k is the cost of adding one redundant device, and y is the total cost of the series converter. The series converter has a complementary failure rate and reliability of Fbra(t)＝1-Rbra(t) of (d). For example, the power device reliability expression is in the form of a common exponent, i.e., r (t) ═ e-λtFor example, the number n of normal operating devices in the series converter is 7, the number r of redundant devices is 1, and assuming that the reliability index λ is 1e-5, the cost of the series converter with 7 hybrid parallel devices is $ 600, and the cost of each additional hybrid parallel redundant device is $ 50. The failure rate (5 years) and cost of the series converter change with the number of the redundant devices as shown in fig. 2, and the failure probability of the series converter decreases with the increase of the number of the redundant devices, that is, the reliability increases; the cost of the series converter increases as the number of redundant devices increases. According to the trade-off relationship between the failure probability of the converter and the cost, as can be seen from fig. 2, under the configuration condition of the series converter, when the number of the redundant devices is 5, the advantages of reliability and cost can be achieved, namely, r is an optimal value of 5.
Meanwhile, the invention provides a fault operation control method suitable for the series converter based on the Si IGBT/SiC mixed parallel device, if a certain power device in the series converter fails, a fault operation control strategy can judge the failure position in a switching period (microsecond level) and upload the operation condition of the series converter, and a corresponding control strategy is adopted to bypass the fault device and input a redundant device so as to maintain the normal operation of the series converter.
The power device state monitoring in the fault operation control method is realized based on the following modes: the central controller judges whether the power device is in open circuit failure or not and positions the failure position by detecting the feedback signal; the voltage at two ends of the power device sampled after the driver receives the turn-off signal under the short-circuit fault is zero, and the central controller judges whether the power device is short-circuit failure or not and positions the failure position by detecting the voltage at two ends of the power device during turn-off.
The control method is different, and the fault type can be judged, the fault type can be positioned and a coping strategy can be made in one switching period (microsecond level). In order to verify the effectiveness of the fault operation control method under the condition of device fault, a series converter based on the number of normal operation devices of a Si IGBT/SiC MOS hybrid parallel device of which the number is 7 and the number of redundant devices of which the number is 1 is built, wherein the number of Si IGBTs and the number of SiC MOS in the hybrid parallel device are 1, and a test verification circuit is shown in FIG. 3.
If the power device in the series converter is in an open-circuit fault, the control time sequence under the open-circuit fault is shown in fig. 4, and the control method specifically comprises the following steps:
(1) the central controller sends driving to the power devices in the operation state in the series converter, and detects the feedback signal of each power device after a period of delay time;
(2) if the feedback signal of a certain power device in the series converter is lost, the central controller judges that the power device is in an open-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; while the central controller puts redundant power device enable into the converter for run state.
Based on the test circuit shown in fig. 3, the fault operation control method under open circuit fault is completed under the test condition of 2kV100A, and the test waveform is shown in fig. 5. And when the feedback signal at the fifth pulse is lost and an open-circuit fault occurs, the central controller sends a normally open signal to the fault hybrid parallel device in one switching period, and meanwhile, the redundant device is put into use to ensure the normal operation of the series converter.
If the power device in the series converter is in a short-circuit fault, the control sequence under the short-circuit fault is shown in fig. 6, and the control method specifically comprises the following steps:
(1) the central controller sends out drive turn-off to the power devices in the series converter in the running state, and detects the voltage at two ends of each power device after a period of delay time;
(2) if the voltage at two ends of a certain power device in the series converter in the off state is zero, the central controller judges that the power device is in short-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; while the central controller puts redundant power device enable into the converter for run state.
Based on the test circuit shown in fig. 3, the fault operation control method under short-circuit fault is completed under the test condition of 2kV100A, and the test waveform is shown in fig. 7. After the fifth pulse sends out a turn-off signal, the voltages at the two ends of the device are always kept at low level, a short-circuit fault occurs, the central controller judges the occurrence of the short-circuit fault by detecting the voltages at the two ends of the device when the device is turned off, sends out a normally open signal to the fault mixed parallel device in a switching period, and puts in a redundant device to ensure the normal operation of the series converter.
Therefore, the scope of the present invention should not be limited to the disclosure of the embodiments, but includes various alternatives and modifications without departing from the scope of the present invention, which is defined by the claims of the present patent application.
Claims (10)
1. A series converter based on Si IGBT/SiC MOS hybrid parallel devices is characterized in that the series converter is of a half-bridge structure, the upper bridge arm and the lower bridge arm are symmetrical, the upper bridge arm and the lower bridge arm are both formed by connecting n + r hybrid parallel devices in series, the n hybrid parallel devices maintain the normal operation of the series converter, the r hybrid parallel devices are used for redundancy, each hybrid parallel device in the series converter is formed by connecting a SiC MOS and b IGBTs in parallel, the drain electrode of each SiC MOS in the hybrid parallel devices is connected with the collector electrode of each IGBT, the source electrode of each SiC MOS is connected with the emitter electrode of each IGBT, each power device in the series converter comprises an independent driver, the drivers are responsible for receiving driving signals, driving the power devices and sending feedback signals, and the series converter comprises a general central controller, and the system is responsible for receiving a driving signal sequence and a feedback signal of each power device, judging the health state of the device and adjusting a control strategy.
2. The series converter based on the Si IGBT/SiC MOS hybrid parallel device of claim 1, wherein the SiC MOS and the IGBT in the hybrid parallel device have the same voltage level.
3. The series converter based on the Si IGBT/SiC MOS hybrid parallel device of claim 1, wherein the SiC MOS and the IGBT in the hybrid parallel device are separated power devices or power modules.
4. The series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in claim 1, wherein the driving signal and the feedback signal are transmitted through optical fiber.
5. The Si IGBT/SiC MOS hybrid parallel device-based series converter according to claim 1, wherein the central controller is a digital control logic chip.
6. The series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in claim 1, wherein the device failure modes comprise two modes of open-circuit fault and short-circuit fault.
7. The series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in claim 1, wherein the driver sends a feedback signal to the central controller after a delay time when receiving a driving turn-on signal and the driven device is in a normal conducting state; the driver comprises a device voltage sampling function, and the sampling driver samples the voltages at two ends of the power device under the condition that the power device is completely switched off after receiving the driving switching-off signal; the driver comprises a digital control chip which is in communication connection with the central controller and uploads the sampled device voltage to the central controller.
8. The series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in claim 1, wherein the power device state monitoring is realized based on the following ways: the central controller judges whether the power device is in open circuit failure or not and positions the failure position by detecting the feedback signal; the voltage at two ends of the power device sampled after the driver receives the turn-off signal under the short-circuit fault is zero, and the central controller judges whether the power device is short-circuit failure or not and positions the failure position by detecting the voltage at two ends of the power device during turn-off.
9. The series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in claim 1, wherein the number r of the redundant devices is the result of the balance between the reliability of the series converter and the cost of the converter, and the reliability of the series converter is as follows:
wherein R (t) is the single workThe expression of the ratio devices, where m is the cost of the series converter without redundant devices, k is the cost of adding one redundant device, and y is the total cost of the series converter.
10. The method for controlling the fault operation of the series converter based on the Si IGBT/SiC MOS hybrid parallel device as claimed in any one of claims 1 to 9, wherein according to the open-circuit fault and the short-circuit fault of the device, the control method judges the fault type, positions the fault type and makes a coping strategy in one switching period;
if the power device in the series converter is in open-circuit fault, the control method specifically comprises the following steps:
(1) the central controller sends driving to the power devices in the operation state in the series converter, and detects the feedback signal of each power device after a period of delay time;
(2) if the feedback signal of a certain power device in the series converter is lost, the central controller judges that the power device is in an open-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; meanwhile, the central controller enables the redundant power device to be in an operation state and puts the redundant power device into the converter;
if the power device in the series converter is in short circuit fault; the control method specifically comprises the following steps:
(1) the central controller sends out drive turn-off to the power devices in the series converter in the running state, and detects the voltage at two ends of each power device after a period of delay time;
(2) if the voltage at two ends of a certain power device in the series converter in the off state is zero, the central controller judges that the power device is in short-circuit fault, and positions the power device;
(3) the central controller sends a normally open driving signal to the fault device and the parallel device thereof to keep the hybrid parallel device in a conducting state all the time; while the central controller puts redundant power device enable into the converter for run state.
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| CN114257110A (en) * | 2021-12-27 | 2022-03-29 | 温州大学 | Modularized inversion system redundancy management strategy based on device mixing technology |
| CN114257110B (en) * | 2021-12-27 | 2024-03-01 | 温州大学 | Redundancy management strategy of modularized inverter system based on device mixing technology |
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Application publication date: 20210423 |